JP2011176178A5 - - Google Patents

Download PDF

Info

Publication number
JP2011176178A5
JP2011176178A5 JP2010039845A JP2010039845A JP2011176178A5 JP 2011176178 A5 JP2011176178 A5 JP 2011176178A5 JP 2010039845 A JP2010039845 A JP 2010039845A JP 2010039845 A JP2010039845 A JP 2010039845A JP 2011176178 A5 JP2011176178 A5 JP 2011176178A5
Authority
JP
Japan
Prior art keywords
enclosure
reaction tube
heat treatment
heater
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010039845A
Other languages
English (en)
Japanese (ja)
Other versions
JP5477955B2 (ja
JP2011176178A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010039845A external-priority patent/JP5477955B2/ja
Priority to JP2010039845A priority Critical patent/JP5477955B2/ja
Priority to KR1020100129771A priority patent/KR20110097606A/ko
Priority to TW100104543A priority patent/TWI437641B/zh
Priority to US13/033,974 priority patent/US8734148B2/en
Priority to CN2011100486694A priority patent/CN102194661B/zh
Publication of JP2011176178A publication Critical patent/JP2011176178A/ja
Priority to KR1020120148003A priority patent/KR101241933B1/ko
Publication of JP2011176178A5 publication Critical patent/JP2011176178A5/ja
Publication of JP5477955B2 publication Critical patent/JP5477955B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010039845A 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法 Active JP5477955B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法
KR1020100129771A KR20110097606A (ko) 2010-02-25 2010-12-17 열처리 장치 및 반도체 장치의 제조 방법
TW100104543A TWI437641B (zh) 2010-02-25 2011-02-11 熱處理裝置及半導體裝置之製造方法
US13/033,974 US8734148B2 (en) 2010-02-25 2011-02-24 Heat treatment apparatus and method of manufacturing semiconductor device
CN2011100486694A CN102194661B (zh) 2010-02-25 2011-02-25 热处理装置及半导体装置的制造方法
KR1020120148003A KR101241933B1 (ko) 2010-02-25 2012-12-18 열처리 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011176178A JP2011176178A (ja) 2011-09-08
JP2011176178A5 true JP2011176178A5 (enExample) 2013-03-07
JP5477955B2 JP5477955B2 (ja) 2014-04-23

Family

ID=44476878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010039845A Active JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US8734148B2 (enExample)
JP (1) JP5477955B2 (enExample)
KR (2) KR20110097606A (enExample)
CN (1) CN102194661B (enExample)
TW (1) TWI437641B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101750633B1 (ko) * 2012-07-30 2017-06-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP6385257B2 (ja) * 2014-11-27 2018-09-05 光洋サーモシステム株式会社 熱処理装置
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
KR101895404B1 (ko) 2015-12-29 2018-09-05 세메스 주식회사 기판 처리 장치 및 방법
CN107740191A (zh) * 2017-12-01 2018-02-27 浙江海洋大学 一种热处理装置
JP6918211B2 (ja) * 2018-03-27 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650908B2 (ja) * 1987-04-17 1997-09-10 株式会社日立製作所 熱処理方法
JPH0287618A (ja) * 1988-09-26 1990-03-28 Tel Sagami Ltd 熱処理装置
JP4070832B2 (ja) * 1996-02-13 2008-04-02 株式会社日立国際電気 半導体製造装置
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
JPH10303099A (ja) 1997-04-24 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
TW522482B (en) 2000-08-23 2003-03-01 Tokyo Electron Ltd Vertical heat treatment system, method for controlling vertical heat treatment system, and method for transferring object to be treated
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
JP4523225B2 (ja) 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
JP4167280B2 (ja) * 2006-08-25 2008-10-15 株式会社日立国際電気 半導体製造装置及び半導体の製造方法
KR100942067B1 (ko) 2007-12-06 2010-02-11 주식회사 테라세미콘 고온 퍼니스
JP5176771B2 (ja) * 2008-08-14 2013-04-03 信越半導体株式会社 縦型熱処理装置及び熱処理方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法

Similar Documents

Publication Publication Date Title
JP2011176178A5 (enExample)
JP2015183224A5 (enExample)
JP2010199160A5 (ja) 基板処理装置、半導体装置の製造方法及び基板処理方法
JP2010025107A5 (enExample)
TWI570378B (zh) 熱處理爐及熱處理設備
JP2011258943A5 (ja) トランジスタの作製方法
WO2017161657A1 (zh) 一种槽式烘干结构
JP2016134585A5 (enExample)
CN105271792B (zh) 固化装置及固化方法
JP2015229936A5 (enExample)
JP2014138063A5 (enExample)
TW201506326A (zh) 廢氣處理裝置
CN207478242U (zh) 一种内热式吸附剂脱附装置
CN203310228U (zh) 一种太阳能硅片干燥炉
JP2012009702A5 (enExample)
CN202626256U (zh) 新型硬质合金顶锤时效处理炉
CN201917207U (zh) 一种带氮气保护气氛的铜锭感应加热系统
JP2009088348A5 (enExample)
JP2014067797A5 (enExample)
JP2005183823A5 (enExample)
JP2012222157A5 (enExample)
JP2011114339A5 (enExample)
CN103017495B (zh) 一种滤水吹干设备
WO2016050192A1 (zh) 一种真空绝热板的制作方法
JP2013172811A5 (enExample)