KR20110097606A - 열처리 장치 및 반도체 장치의 제조 방법 - Google Patents

열처리 장치 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20110097606A
KR20110097606A KR1020100129771A KR20100129771A KR20110097606A KR 20110097606 A KR20110097606 A KR 20110097606A KR 1020100129771 A KR1020100129771 A KR 1020100129771A KR 20100129771 A KR20100129771 A KR 20100129771A KR 20110097606 A KR20110097606 A KR 20110097606A
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KR
South Korea
Prior art keywords
reaction tube
heat
substrate
circumference
manifold
Prior art date
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Abandoned
Application number
KR1020100129771A
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English (en)
Korean (ko)
Inventor
케이신 야마자키
아키라 하야시다
마사아키 우에노
마나부 이즈미
카츠아키 노가미
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
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Publication of KR20110097606A publication Critical patent/KR20110097606A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
KR1020100129771A 2010-02-25 2010-12-17 열처리 장치 및 반도체 장치의 제조 방법 Abandoned KR20110097606A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-039845 2010-02-25
JP2010039845A JP5477955B2 (ja) 2010-02-25 2010-02-25 熱処理装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020120148003A Division KR101241933B1 (ko) 2010-02-25 2012-12-18 열처리 장치 및 반도체 장치의 제조 방법

Publications (1)

Publication Number Publication Date
KR20110097606A true KR20110097606A (ko) 2011-08-31

Family

ID=44476878

Family Applications (2)

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KR1020100129771A Abandoned KR20110097606A (ko) 2010-02-25 2010-12-17 열처리 장치 및 반도체 장치의 제조 방법
KR1020120148003A Active KR101241933B1 (ko) 2010-02-25 2012-12-18 열처리 장치 및 반도체 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020120148003A Active KR101241933B1 (ko) 2010-02-25 2012-12-18 열처리 장치 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US8734148B2 (enExample)
JP (1) JP5477955B2 (enExample)
KR (2) KR20110097606A (enExample)
CN (1) CN102194661B (enExample)
TW (1) TWI437641B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5792390B2 (ja) * 2012-07-30 2015-10-14 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6385257B2 (ja) * 2014-11-27 2018-09-05 光洋サーモシステム株式会社 熱処理装置
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
KR101895404B1 (ko) 2015-12-29 2018-09-05 세메스 주식회사 기판 처리 장치 및 방법
CN107740191A (zh) * 2017-12-01 2018-02-27 浙江海洋大学 一种热处理装置
WO2019186681A1 (ja) * 2018-03-27 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650908B2 (ja) * 1987-04-17 1997-09-10 株式会社日立製作所 熱処理方法
JPH0287618A (ja) * 1988-09-26 1990-03-28 Tel Sagami Ltd 熱処理装置
JP4070832B2 (ja) * 1996-02-13 2008-04-02 株式会社日立国際電気 半導体製造装置
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5846073A (en) * 1997-03-07 1998-12-08 Semitool, Inc. Semiconductor furnace processing vessel base
JPH10303099A (ja) 1997-04-24 1998-11-13 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
TW522482B (en) 2000-08-23 2003-03-01 Tokyo Electron Ltd Vertical heat treatment system, method for controlling vertical heat treatment system, and method for transferring object to be treated
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
JP4523225B2 (ja) 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
JP4167280B2 (ja) * 2006-08-25 2008-10-15 株式会社日立国際電気 半導体製造装置及び半導体の製造方法
KR100942067B1 (ko) 2007-12-06 2010-02-11 주식회사 테라세미콘 고온 퍼니스
JP5176771B2 (ja) * 2008-08-14 2013-04-03 信越半導体株式会社 縦型熱処理装置及び熱処理方法
JP5751549B2 (ja) * 2010-03-15 2015-07-22 株式会社日立国際電気 熱処理装置及び半導体の製造方法

Also Published As

Publication number Publication date
JP5477955B2 (ja) 2014-04-23
KR101241933B1 (ko) 2013-03-11
JP2011176178A (ja) 2011-09-08
TWI437641B (zh) 2014-05-11
US8734148B2 (en) 2014-05-27
KR20130009938A (ko) 2013-01-24
CN102194661B (zh) 2013-11-27
CN102194661A (zh) 2011-09-21
TW201142951A (en) 2011-12-01
US20110207339A1 (en) 2011-08-25

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