TWI435679B - 形成具有複數個隔離式電導通接觸之外殼元件之方法及藉此形成之外殼元件 - Google Patents
形成具有複數個隔離式電導通接觸之外殼元件之方法及藉此形成之外殼元件 Download PDFInfo
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Description
本發明一般關於一種在一金屬基板中形成一電隔離式接觸之方法及一種裝置其包含一由揭示於此之方法形成的電隔離式接觸。
金屬被頻繁地用作許多種產品包括消費性電子產品的外殼。一種有時被使用之金屬為鋁,在這種情況中鋁通常會經陽極處理。在鋁封裝之該情況中,它們可被機械加工或擠壓成形。為增加化學及機械強度,鋁可經陽極處理,進而形成一種幾微米厚之堅固的絕緣氧化鋁層。該陽極化提供一堅固表面以防止鋁氧化。該陽極化可被注入染料以為該封裝提供色彩。
一種產生一電隔離式接觸之方法由在一金屬基板中形成一通孔開始。該通孔包含一側壁,在該側壁上形成有一電絕緣層。以一導電填充物填充該通孔。
該電絕緣層如何被形成之一實例為陽極化。另一實例為薄膜沈積。
在一個實例中,該通孔可在形成該電絕緣層之前予以清潔。
亦提供一種例如一包含複數個隔離式導通接觸之外殼部分的封裝。該外殼部分可包含一部分,其係由一金屬基板製成。該隔離式導通接觸藉由在該基板中形成一通孔而予
以形成於該基板中。該通孔之該側壁被塗佈有一電絕緣材料。
本發明之這些及其它實例將更詳細地描述於後。
所揭示的是一種在一金屬基板中形成一個或多個隔離式電接觸的方法。在一金屬基板中鑽出一通孔。該通孔之該(等)側壁可使用一種蝕刻予以清潔。一非導電塗層係形成於該通孔側壁上。在一實例中,該等通孔側壁係經陽極處理。在另一實例中,利用一種薄膜沈積製程於該等通孔側壁塗佈一介電質。然後一導電材料係被插入該通孔中。在一實例中,該導電材料為一導電墨水。在另一實例中,該導電材料為一導電環氧樹脂。因為該等通孔側壁係非導電的,在該基板之該板體中電信號及/或電流可穿過該導通材料而不會接地或漏出。
參考圖1,其顯示一示意流程圖,此流程圖說明有關於形成一種隔離式電接觸之一實例的該等步驟。參考步驟2,提供一金屬基板。在這個實例中,該金屬為鋁,因為其可容易經陽極處理,但其他金屬亦可容易經陽極處理,例如鈦及鈮。在步驟3中至少一個通孔係形成於該基板中。該(等)通孔可使用一雷射、一脈衝雷射、一鑽頭、一EDM及類似物形成。於步驟4中,在形成一通孔後,其若干側壁(或舉例來說,如果形成一連續壁,則為一個側壁)予以清潔。在步驟4中,該整個基板亦可被清潔。清潔技術之實例包括,但不限於,高壓空氣噴射、超音速清潔、
細沙研磨及/或化學蝕刻。一化學蝕刻之一實例為氫氧化納鹼性蝕刻。在步驟5中,該通孔之該側壁經陽極處理。在步驟5中,如果該基板未經陽極處理其亦可經陽極處理。可使用類型I或類型Ⅱ陽極化。在顯示於此之該等實例中,整個基板在形成該通孔後經陽極處理。然而,該基板亦可在形成任一通孔前經陽極處理。在步驟6中,以一導電材料填充該等通孔。導電材料之實例包含導電墨水例如以商標名Anapro出售之導電墨水,或導電性環氧樹脂例如以商標名Masterbond出售之導電性環氧樹脂。以商標名Anapro出售的該環氧樹脂包含散佈於一溶劑中的銀奈米顆粒,該溶劑具有較低的黏度。
藉由在圖1中說明之該方法形成的該等隔離式電接觸可被用於許多種應用,包括但不限於天線及觸摸感測器。
參考圖2,其顯示一示意流程圖,此流程圖說明有關於形成一種隔離式電接觸之另一實例的步驟。步驟2及3與圖1中之步驟2及3相同。在步驟3中形成一通孔後,於步驟4清潔通孔之側壁,以允許一傳統的薄膜沈積製程可被實行於該等通孔側壁上。在步驟7中,該通孔經塗佈一介電質。任何數量的薄膜沈積技術可被用以將該介電質沈積在該等通孔側壁上。舉例來說,化學氣相沈積(CVD)可予以使用以將一層二氧化矽沈積於該等通孔側壁上。在步驟6中,以一導電材料填充該等通孔,如圖1中所描述。
參考圖3A至圖3D,其顯示一種金屬基板14,此金屬基板14具有一形成於其中的隔離式電接觸。如圖所示,基板
14未經陽極處理,且亦未塗佈有一介電材料。在未顯示於此的另一實例中,基板14可經陽極處理或塗佈有一介電質。此種基板通常被用於一消費性電子封裝,且係由鋁製成。基板14包含一第一側16及一第二側18。在此實例中,基板14包含一可介於0.3至1.0 mm之間的厚度。如圖所示,一雷射46可用以形成一通孔30。雷射46的一種類型係一種使用圓形或螺旋形圖案的二極體激升(diode-pumped)固態脈衝雷射。已證明一具有30 kHz之脈衝重複率及~60奈秒之脈衝寬度的Nd:YAG 355 nm光斑22有利於加工圓錐形通孔。亦可使用其他雷射,且使用其他技術以形成通孔30。形成通孔30之其他方式之實例可參考前文。
通孔30可為圓錐形。通孔30包括一側壁34、一第一開口40及一第二開口44。開口40及44之每一者的直徑可介於20及200微米(μm)之間。在一實例中,開口40之直徑介於大約90-100微米(μm)之間,開口44之直徑介於大約30-40微米(μm)之間。在所提及的實例中,許多通孔可形成圖案化之間隔的陣列,如圖5所示,其具有例如100微米之間隔。開口44難以依據目視檢查而察覺。開口44可藉由(例如)利用各種表面加工處理側18而進一步被掩飾,而該等表面加工之一實例為珠光處理。
通孔側壁34可予以清潔。如上文所提及,可使用多種清潔方法。在此實施例中,在該側壁34將予以陽極處理之處,清潔側壁34會改進該側壁34之陽極處理。
參考圖3B,側壁34經陽極處理或經塗佈一介電材料。在
圖3B中,元件49示意地代表有關步驟4所述之用於清潔的施料器,以及當根據步驟7之沈積發生時,步驟7之該介電材料的塗佈器之兩者。
在側壁34被陽極處理之情況中,如圖3C之該實例所示,在側壁34經陽極處理時同時陽極處理整個基板14可能是更有效的。在此情況中,該整個基板14(包括通孔側壁34)亦都可一次被清潔。如上文所提及,可使用類型I或類型Ⅱ之陽極處理。藉由陽極處理側壁34,一絕緣層(在此為一套管48)係形成於側壁34上。在圖2之實例中,提供一在通孔30形成之前經陽極處理的金屬基板,且之後在該通孔側壁34上沈積一薄膜可能是更有效的。
在基板14於通孔30形成之前未經陽極處理的情況中,第一側16及第二側18可與側壁34同時經陽極處理。在基板14由鋁形成的實例中,該陽極化製程可形成一厚度介於5微米及75微米之間的氧化鋁表面60。形成絕緣套管48的該經陽極處理層的厚度可為大約5微米,並且不應完全封閉開口44。
參考圖3D,一種電導通填充材料50填充通孔30。一種電導通填充材料50之一實例為以商標名Anapro出售的銀奈米顆粒液體導電墨水,其在通孔30中變乾。可使用各種形式之填充方法以填充材料50填充通孔30。在Anapro之情況中,可使用一噴墨方法。另一種可使用之填充材料係以商標名Masterbond出售,其為一種可被注入通孔30中之二部(two-part)導電環氧樹脂。Masterbond係一種液體,且在其
經注入後於通孔30中固化。由於填充材料50係導電的且側壁34(在處理後)為非導電的,因此形成一隔離式導通接觸。電信號可穿過填充材料50而不會短路於基板14中。此外,當提供多個通孔時,若干組通孔可與其他通孔絕緣,使得不同的電信號可穿過不同的填充通孔。
圖4A至圖4E說明另一實施例以產生一隔離式電接觸。如圖所示,基板14包含一凹穴24,該凹穴24延伸入基板14之厚度20中,使得該基板在該凹穴24處具有一厚度22。如同該方法之一部分,凹穴24可被形成於基板14中,或提供具有形成於其中之凹穴24的基板14。在所說明的實例中,凹穴24被形成於基板14中,使凹穴24之側壁26及底部28暴露於導通基板14。在圖4A至圖4E說明的該實例中,通孔30在凹穴24之底部28處形成於基板14中。同樣在此實例中,通孔30藉由塗佈器49以一種相似於圖3A至圖3D之該實例的方式清潔。凹穴24之側壁26可於清潔通孔側壁34時同時被清潔。
如圖4C所示,側壁26、底部28及通孔側壁34可經陽極處理。在此情況中更有效的是在側壁26、底部28及通孔側壁34經陽極處理的同時陽極處理整個基板14。或者,在另一使用鋁的實例中,該基板可在形成凹穴24及/或通孔30前經陽極處理。在此替代實例中,可使用(例如)一CVD技術於側壁26、底部28及通孔側壁34上塗佈一介電材料。
參考圖4D及圖4E,一電導通填充物50被置入通孔30中。導電填充物可被分離地置入通孔30中如圖4D所示,或
被總體地置入通孔30中如圖4E所示。如圖4F,凹穴24可進一步以一導電材料52填充。導電材料52可與導電材料50相同,或可為一不同材料。
圖5說明一經陽極處理之金屬封裝,其可為一種外殼元件62,該外殼元件62具有一包含隔離式電接觸的區域64。區域64經說明為含有一系列斑點以象徵隔離式電接觸,但在實際應用中隔離式電接觸可能比說明於區域64中之斑點更難看得見。區域64可作為一行動電話之天線使用,或者在另一實例中與區域64之物理接觸可作用以開啟或關閉一電子裝置。同樣地,字母數位符號可與隔離式電接觸關聯以作為鍵感測器。這些感測器似乎為該封裝或外殼元件62之一部分,但實際上接觸一個或多個隔離式電接觸。
該等上述實施例已予以描述以允許易於理解本發明,且不限制本發明。相反地,本發明欲涵蓋包含在該等所附請求項之範圍內的各種修改及等效配置,此範圍將符合最廣泛的解釋,以在法律的允許下包含所有此類修改及等效結構。
2‧‧‧提供金屬基板
3‧‧‧在基板中形成通孔
4‧‧‧清潔通孔側壁
5‧‧‧陽極處理通孔側壁
6‧‧‧用導電環氧樹脂填充通孔
7‧‧‧在側壁上沈積介電質
14‧‧‧基板
16‧‧‧第一側面
18‧‧‧第二側面
20‧‧‧基板厚度
22‧‧‧厚度
24‧‧‧凹穴
26‧‧‧凹穴側壁
28‧‧‧凹穴底部
30‧‧‧通孔
34‧‧‧通孔側壁
40‧‧‧第一開口
44‧‧‧第二開口
46‧‧‧雷射
48‧‧‧絕緣套管
49‧‧‧元件
50‧‧‧電導通填充材料
52‧‧‧導通材料
60‧‧‧氧化鋁表面
62‧‧‧外殼元件
64‧‧‧區域
圖1為一流程圖,其說明在一金屬基板中產生一隔離式電接觸之步驟的順序之一實例;圖2為一流程圖,其說明在一金屬基板中產生一隔離式電接觸之步驟的順序之一第二實例;圖3A圖示說明在一基板中形成一通孔;圖3B圖示說明在一基板中清潔一通孔;
圖3C圖示說明陽極處理在一基板中之一通孔的一側壁;圖3D圖示說明用一導電材料填充圖3C之該通孔;圖4A圖示說明在一基板之一凹穴區域中形成複數個通孔;圖4B圖示說明清潔在一基板之一凹穴區域的複數個通孔;圖4C圖示說明陽極處理複數個通孔之該等側壁;圖4D圖示說明用一導電材料填充複數個通孔;圖4E圖示說明用一導電材料填充複數個通孔;圖4F圖示說明填充有一導電材料的一凹穴及填充有一導電材料的通孔;及圖5為一經陽極處理之金屬封裝其具有形成於其中之通孔的圖示代表。
14‧‧‧基板
16‧‧‧第一側
18‧‧‧第二側
34‧‧‧通孔側壁
40‧‧‧第一開口
44‧‧‧第二開口
50‧‧‧電導通填充材料
Claims (14)
- 一種形成具有複數個穿透一金屬基板之電隔離式接觸之外殼元件的方法,其包括:在該金屬基板中形成複數個通孔,其中每一通孔包括位於該金屬基板之上表面之一第一開口、位於該金屬基板反側之下表面之一第二開口及至少一個連續側壁,其延伸於該第一開口及該第二開口之間;在每一通孔的該至少一個側壁上形成一介電套管,然而保留每一通孔的至少一部分;以及在形成該介電套管後,用一電導通材料填充每一通孔以形成該複數個電隔離式接觸,其中該複數個電隔離式接觸在該外殼元件之一外表面上形成一圖案。
- 如請求項1之方法,其進一步包括:在形成該介電套管前,用一蝕刻製程清潔每一通孔之該至少一個側壁。
- 如請求項1之方法,其中該介電套管係經由陽極化或化學氣相沈積而形成。
- 如請求項1之方法,其中該基板係由鋁構成,且在每一通孔形成後,該鋁經陽極處理以形成該介電套管。
- 如請求項1之方法,其中該基板包括一形成於其中的凹穴,該凹穴包括至少一個側壁及一底部,且每一通孔形成於該凹穴之該底部中。
- 如請求項5之方法,其中該凹穴被該電導通材料填充。
- 如請求項1之方法,其中該電導通材料為一導電墨水或 一銀奈米顆粒液體導電環氧樹脂。
- 如請求項1之方法,其中每一通孔包括:一第一端,其具有介於90到200微米之間之一第一直徑;及一第二端,其具有介於20到50微米之間之一第二直徑。
- 如請求項1之方法,其中每一通孔藉由雷射鑽孔而形成。
- 如請求項1之方法,其中填充每一通孔包含利用該電導通材料完全地填充位於該上表面及下表面之間之每一通孔。
- 如請求項1之方法,其中每一通孔為圓錐形。
- 一種外殼元件,其具有複數個利用請求項1之方法形成之電隔離式接觸,該複數個電隔離式接觸之每一者包含:一通孔,其具有位於該外殼之一部分之上表面之一第一開口、位於該部分反側之下表面之一第二開口及延伸於該第一開口及該第二開口之間的一穿孔側壁;一電絕緣套管,其形成於該穿孔側壁上;及一完全填充該穿孔側壁之該電絕緣套管之導電填充物,其中該複數個電隔離式接觸在該外殼元件之一外表面上形成一圖案。
- 如請求項12之外殼元件,其包括使用該複數個隔離式電接觸的一天線之一部分。
- 如請求項12之外殼元件,其中該複數個電隔離式接觸之至少一個作為一開/關開關操作。
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US11/753,996 US7886437B2 (en) | 2007-05-25 | 2007-05-25 | Process for forming an isolated electrically conductive contact through a metal package |
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TWI435679B true TWI435679B (zh) | 2014-04-21 |
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JP (2) | JP2010528491A (zh) |
KR (1) | KR20100023804A (zh) |
CN (1) | CN101681818B (zh) |
TW (1) | TWI435679B (zh) |
WO (1) | WO2008147695A1 (zh) |
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-
2007
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2008
- 2008-05-14 CN CN2008800165914A patent/CN101681818B/zh not_active Expired - Fee Related
- 2008-05-14 WO PCT/US2008/063609 patent/WO2008147695A1/en active Application Filing
- 2008-05-14 JP JP2010510407A patent/JP2010528491A/ja active Pending
- 2008-05-14 KR KR1020097023952A patent/KR20100023804A/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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JP2010528491A (ja) | 2010-08-19 |
CN101681818B (zh) | 2011-11-23 |
TW200913850A (en) | 2009-03-16 |
US7886437B2 (en) | 2011-02-15 |
KR20100023804A (ko) | 2010-03-04 |
JP2014143423A (ja) | 2014-08-07 |
CN101681818A (zh) | 2010-03-24 |
US20110131807A1 (en) | 2011-06-09 |
US20080289178A1 (en) | 2008-11-27 |
WO2008147695A1 (en) | 2008-12-04 |
US8117744B2 (en) | 2012-02-21 |
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