TWI431766B - 具有多重感測層之影像感測器 - Google Patents
具有多重感測層之影像感測器 Download PDFInfo
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- TWI431766B TWI431766B TW098125958A TW98125958A TWI431766B TW I431766 B TWI431766 B TW I431766B TW 098125958 A TW098125958 A TW 098125958A TW 98125958 A TW98125958 A TW 98125958A TW I431766 B TWI431766 B TW I431766B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
- H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
- H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/184,314 US8471939B2 (en) | 2008-08-01 | 2008-08-01 | Image sensor having multiple sensing layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201013910A TW201013910A (en) | 2010-04-01 |
| TWI431766B true TWI431766B (zh) | 2014-03-21 |
Family
ID=41170970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098125958A TWI431766B (zh) | 2008-08-01 | 2009-07-31 | 具有多重感測層之影像感測器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8471939B2 (enExample) |
| EP (1) | EP2313927B1 (enExample) |
| JP (1) | JP5562953B2 (enExample) |
| KR (1) | KR101417232B1 (enExample) |
| CN (1) | CN102089882B (enExample) |
| TW (1) | TWI431766B (enExample) |
| WO (1) | WO2010014138A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI643321B (zh) * | 2016-10-04 | 2018-12-01 | 美商豪威科技股份有限公司 | 堆疊式影像感測器 |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100301437A1 (en) * | 2009-06-01 | 2010-12-02 | Kla-Tencor Corporation | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems |
| JP5146499B2 (ja) * | 2009-08-08 | 2013-02-20 | 株式会社ニコン | 固体撮像素子 |
| US20110156197A1 (en) * | 2009-12-31 | 2011-06-30 | Tivarus Cristian A | Interwafer interconnects for stacked CMOS image sensors |
| CN102792677B (zh) * | 2010-03-08 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| CA2787911C (en) * | 2010-06-01 | 2017-07-11 | Boly Media Communications (Shenzhen) Co., Ltd. | Multi-spectrum photosensitive devices and methods for sampling the same |
| JP2012015274A (ja) | 2010-06-30 | 2012-01-19 | Canon Inc | 固体撮像装置、及び固体撮像装置の製造方法。 |
| FR2966978B1 (fr) * | 2010-11-03 | 2016-04-01 | Commissariat Energie Atomique | Detecteur de rayonnement visible et proche infrarouge |
| FR2966977B1 (fr) * | 2010-11-03 | 2016-02-26 | Commissariat Energie Atomique | Detecteur de rayonnement visible et proche infrarouge |
| CN102256047B (zh) * | 2011-07-28 | 2013-06-19 | 北京空间机电研究所 | 一种基于滤波的2×2数字binning系统 |
| KR101399338B1 (ko) * | 2011-08-08 | 2014-05-30 | (주)실리콘화일 | 이중 감지 기능을 가지는 기판 적층형 이미지 센서 |
| JP5999750B2 (ja) * | 2011-08-25 | 2016-09-28 | ソニー株式会社 | 撮像素子、撮像装置及び生体撮像装置 |
| JP2013070030A (ja) * | 2011-09-06 | 2013-04-18 | Sony Corp | 撮像素子、電子機器、並びに、情報処理装置 |
| JP2013187475A (ja) * | 2012-03-09 | 2013-09-19 | Olympus Corp | 固体撮像装置およびカメラシステム |
| US8686342B2 (en) * | 2012-04-09 | 2014-04-01 | Omnivision Technologies, Inc. | Double-sided image sensor formed on a single semiconductor wafer die |
| JP6042636B2 (ja) * | 2012-05-28 | 2016-12-14 | オリンパス株式会社 | 固体撮像素子および固体撮像装置 |
| JP2014022561A (ja) | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
| JP6128787B2 (ja) | 2012-09-28 | 2017-05-17 | キヤノン株式会社 | 半導体装置 |
| JP2014099582A (ja) * | 2012-10-18 | 2014-05-29 | Sony Corp | 固体撮像装置 |
| JP2014199898A (ja) * | 2013-03-11 | 2014-10-23 | ソニー株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
| JP6136669B2 (ja) * | 2013-07-08 | 2017-05-31 | 株式会社ニコン | 撮像装置 |
| KR102065633B1 (ko) | 2013-08-12 | 2020-01-13 | 삼성전자 주식회사 | 이미지 센서, 이의 동작 방법, 및 이를 포함하는 시스템 |
| CN105975126A (zh) * | 2013-09-29 | 2016-09-28 | 宸鸿科技(厦门)有限公司 | 触控面板及其制作方法 |
| JP6177117B2 (ja) * | 2013-12-10 | 2017-08-09 | オリンパス株式会社 | 固体撮像装置、撮像装置、固体撮像装置の製造方法 |
| US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| JP2015162604A (ja) * | 2014-02-27 | 2015-09-07 | 株式会社東芝 | Ｃｍｏｓイメージセンサ |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| JP2015192015A (ja) * | 2014-03-28 | 2015-11-02 | オリンパス株式会社 | 固体撮像装置 |
| US9438866B2 (en) | 2014-04-23 | 2016-09-06 | Omnivision Technologies, Inc. | Image sensor with scaled filter array and in-pixel binning |
| US10211250B2 (en) * | 2014-07-03 | 2019-02-19 | Sony Semiconductor Solutions Corporation | Solid-state image sensor electronic device |
| JP6218687B2 (ja) * | 2014-07-17 | 2017-10-25 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| WO2016103315A1 (ja) * | 2014-12-22 | 2016-06-30 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| JP6388669B2 (ja) * | 2015-01-09 | 2018-09-12 | オリンパス株式会社 | 固体撮像装置 |
| US10163968B2 (en) * | 2015-01-23 | 2018-12-25 | Dartmouth College | Multi-junction pixel image sensor with dielectric reflector between photodetection layers |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US9686486B2 (en) * | 2015-05-27 | 2017-06-20 | Semiconductor Components Industries, Llc | Multi-resolution pixel architecture with shared floating diffusion nodes |
| US10341592B2 (en) | 2015-06-09 | 2019-07-02 | Sony Semiconductor Solutions Corporation | Imaging element, driving method, and electronic device |
| JP6607262B2 (ja) * | 2016-01-08 | 2019-11-20 | 株式会社ニコン | 撮像素子および撮像装置 |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| US10313609B2 (en) * | 2016-04-14 | 2019-06-04 | Qualcomm Incorporated | Image sensors having pixel-binning with configurable shared floating diffusion |
| KR102524400B1 (ko) * | 2016-07-04 | 2023-04-24 | 에스케이하이닉스 주식회사 | 하나의 컬러 필터 및 하나의 마이크로렌즈를 공유하는 다수 개의 포토다이오드들을 갖는 이미지 센서 |
| KR102549621B1 (ko) * | 2016-09-02 | 2023-06-28 | 삼성전자주식회사 | 반도체 장치 |
| JP2018081946A (ja) | 2016-11-14 | 2018-05-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP7038494B2 (ja) * | 2017-06-15 | 2022-03-18 | ルネサスエレクトロニクス株式会社 | 固体撮像素子 |
| US10468448B2 (en) * | 2017-11-30 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor image sensor and method for forming the same |
| JP7262011B2 (ja) * | 2018-11-19 | 2023-04-21 | パナソニックＩｐマネジメント株式会社 | 撮像装置及び撮像システム |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US11463634B2 (en) | 2020-04-07 | 2022-10-04 | Caeleste Cvba | Charge domain binning in a MOS pixel |
| US20240038814A1 (en) * | 2020-12-28 | 2024-02-01 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, method of manufacturing the same, and electronic device |
| US12205973B2 (en) | 2021-01-14 | 2025-01-21 | Imec Vzw | Image sensor comprising stacked photo-sensitive devices |
| JPWO2023171008A1 (enExample) * | 2022-03-09 | 2023-09-14 | ||
| WO2024202539A1 (ja) * | 2023-03-31 | 2024-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025047330A1 (ja) * | 2023-08-31 | 2025-03-06 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4438455A (en) * | 1981-12-15 | 1984-03-20 | Fuji Photo Film Co., Ltd. | Solid-state color imager with three layer four story structure |
| US4677289A (en) * | 1984-11-12 | 1987-06-30 | Kabushiki Kaisha Toshiba | Color sensor |
| JPH01151262A (ja) * | 1987-12-09 | 1989-06-14 | Fuji Photo Film Co Ltd | 計測用イメージセンサー |
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPH10284714A (ja) | 1997-04-07 | 1998-10-23 | Toshiba Corp | 固体撮像装置及びこれを用いた撮像システム |
| DE19737561C1 (de) * | 1997-08-28 | 1999-04-15 | Forschungszentrum Juelich Gmbh | Mehrfarbensensor |
| US6693670B1 (en) * | 1999-07-29 | 2004-02-17 | Vision - Sciences, Inc. | Multi-photodetector unit cell |
| JP3713418B2 (ja) | 2000-05-30 | 2005-11-09 | 光正 小柳 | ３次元画像処理装置の製造方法 |
| JP4031901B2 (ja) | 2000-07-19 | 2008-01-09 | 株式会社東芝 | 固体撮像装置 |
| KR20050043754A (ko) * | 2001-11-05 | 2005-05-11 | 미츠마사 코야나기 | 고체 영상센서 및 그 제조방법 |
| JP2003298038A (ja) * | 2002-04-05 | 2003-10-17 | Canon Inc | 光電変換素子及びそれを用いた固体撮像装置 |
| US6933489B2 (en) | 2002-05-10 | 2005-08-23 | Hamamatsu Photonics K.K. | Back illuminated photodiode array and method of manufacturing the same |
| US6646318B1 (en) * | 2002-08-15 | 2003-11-11 | National Semiconductor Corporation | Bandgap tuned vertical color imager cell |
| US7154157B2 (en) * | 2002-12-30 | 2006-12-26 | Intel Corporation | Stacked semiconductor radiation sensors having color component and infrared sensing capability |
| US7339216B1 (en) * | 2003-01-31 | 2008-03-04 | Foveon, Inc. | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer |
| JP4075678B2 (ja) * | 2003-05-06 | 2008-04-16 | ソニー株式会社 | 固体撮像素子 |
| CN100407433C (zh) | 2003-05-23 | 2008-07-30 | 浜松光子学株式会社 | 光检测装置 |
| US7214999B2 (en) | 2003-10-31 | 2007-05-08 | Motorola, Inc. | Integrated photoserver for CMOS imagers |
| JP4046067B2 (ja) | 2003-11-04 | 2008-02-13 | ソニー株式会社 | 固体撮像素子の製造方法 |
| US20050109917A1 (en) * | 2003-11-26 | 2005-05-26 | Wong Hon-Sum P. | Multi-spectral imaging with almost-full fill-factor using 3D pixels |
| JP4186851B2 (ja) | 2004-03-18 | 2008-11-26 | ヤマハ株式会社 | 演奏情報表示装置およびプログラム |
| JP2005268479A (ja) | 2004-03-18 | 2005-09-29 | Fuji Film Microdevices Co Ltd | 光電変換膜積層型固体撮像装置 |
| JP4491323B2 (ja) * | 2004-10-22 | 2010-06-30 | 富士フイルム株式会社 | 光電変換膜積層型カラー固体撮像装置 |
| KR100598015B1 (ko) * | 2005-02-07 | 2006-07-06 | 삼성전자주식회사 | 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃 |
| US7271025B2 (en) * | 2005-07-12 | 2007-09-18 | Micron Technology, Inc. | Image sensor with SOI substrate |
| FR2888989B1 (fr) | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
| JP4984634B2 (ja) * | 2005-07-21 | 2012-07-25 | ソニー株式会社 | 物理情報取得方法および物理情報取得装置 |
| US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
| JP2007059517A (ja) * | 2005-08-23 | 2007-03-08 | Fujifilm Corp | 光電変換膜、光電変換素子、及び撮像素子、並びに、これらに電場を印加する方法 |
| KR100775058B1 (ko) * | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
| JP2007228460A (ja) | 2006-02-27 | 2007-09-06 | Mitsumasa Koyanagi | 集積センサを搭載した積層型半導体装置 |
| US7419844B2 (en) * | 2006-03-17 | 2008-09-02 | Sharp Laboratories Of America, Inc. | Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer |
| JP4130211B2 (ja) | 2006-05-31 | 2008-08-06 | 三洋電機株式会社 | 撮像装置 |
| US8049256B2 (en) | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
| KR100825808B1 (ko) * | 2007-02-26 | 2008-04-29 | 삼성전자주식회사 | 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법 |
| US8106426B2 (en) * | 2008-02-04 | 2012-01-31 | Sharp Laboratories Of America, Inc. | Full color CMOS imager filter |
| US7893468B2 (en) * | 2008-05-30 | 2011-02-22 | International Business Machines Corporation | Optical sensor including stacked photodiodes |
-
2008
- 2008-08-01 US US12/184,314 patent/US8471939B2/en active Active
-
2009
- 2009-07-13 EP EP09788904.2A patent/EP2313927B1/en active Active
- 2009-07-13 WO PCT/US2009/004051 patent/WO2010014138A1/en not_active Ceased
- 2009-07-13 KR KR1020117002504A patent/KR101417232B1/ko active Active
- 2009-07-13 CN CN200980127273XA patent/CN102089882B/zh active Active
- 2009-07-13 JP JP2011521091A patent/JP5562953B2/ja active Active
- 2009-07-31 TW TW098125958A patent/TWI431766B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI643321B (zh) * | 2016-10-04 | 2018-12-01 | 美商豪威科技股份有限公司 | 堆疊式影像感測器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110036823A (ko) | 2011-04-11 |
| TW201013910A (en) | 2010-04-01 |
| JP5562953B2 (ja) | 2014-07-30 |
| KR101417232B1 (ko) | 2014-07-08 |
| CN102089882B (zh) | 2013-07-24 |
| EP2313927B1 (en) | 2015-12-02 |
| EP2313927A1 (en) | 2011-04-27 |
| CN102089882A (zh) | 2011-06-08 |
| US8471939B2 (en) | 2013-06-25 |
| WO2010014138A1 (en) | 2010-02-04 |
| US20100026865A1 (en) | 2010-02-04 |
| JP2011530165A (ja) | 2011-12-15 |
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