JP5562953B2 - 複数のセンシング層を有するイメージセンサ - Google Patents

複数のセンシング層を有するイメージセンサ Download PDF

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JP5562953B2
JP5562953B2 JP2011521091A JP2011521091A JP5562953B2 JP 5562953 B2 JP5562953 B2 JP 5562953B2 JP 2011521091 A JP2011521091 A JP 2011521091A JP 2011521091 A JP2011521091 A JP 2011521091A JP 5562953 B2 JP5562953 B2 JP 5562953B2
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voltage conversion
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sensor
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JP2011530165A5 (enExample
JP2011530165A (ja
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アレクサンドル ティヴァラス，クリスチャン
ピー マックカーテン，ジョン
アール サンマ，ジョセフ
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011521091A 2008-08-01 2009-07-13 複数のセンシング層を有するイメージセンサ Active JP5562953B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/184,314 2008-08-01
US12/184,314 US8471939B2 (en) 2008-08-01 2008-08-01 Image sensor having multiple sensing layers
PCT/US2009/004051 WO2010014138A1 (en) 2008-08-01 2009-07-13 Image sensor having multiple sensing layers

Publications (3)

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JP2011530165A JP2011530165A (ja) 2011-12-15
JP2011530165A5 JP2011530165A5 (enExample) 2012-06-28
JP5562953B2 true JP5562953B2 (ja) 2014-07-30

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US (1) US8471939B2 (enExample)
EP (1) EP2313927B1 (enExample)
JP (1) JP5562953B2 (enExample)
KR (1) KR101417232B1 (enExample)
CN (1) CN102089882B (enExample)
TW (1) TWI431766B (enExample)
WO (1) WO2010014138A1 (enExample)

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Publication number Publication date
KR20110036823A (ko) 2011-04-11
TW201013910A (en) 2010-04-01
KR101417232B1 (ko) 2014-07-08
CN102089882B (zh) 2013-07-24
EP2313927B1 (en) 2015-12-02
EP2313927A1 (en) 2011-04-27
CN102089882A (zh) 2011-06-08
US8471939B2 (en) 2013-06-25
TWI431766B (zh) 2014-03-21
WO2010014138A1 (en) 2010-02-04
US20100026865A1 (en) 2010-02-04
JP2011530165A (ja) 2011-12-15

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