TWI429323B - Organic electroluminescent element - Google Patents
Organic electroluminescent element Download PDFInfo
- Publication number
- TWI429323B TWI429323B TW095131019A TW95131019A TWI429323B TW I429323 B TWI429323 B TW I429323B TW 095131019 A TW095131019 A TW 095131019A TW 95131019 A TW95131019 A TW 95131019A TW I429323 B TWI429323 B TW I429323B
- Authority
- TW
- Taiwan
- Prior art keywords
- sealing film
- film
- power supply
- supply opening
- organic
- Prior art date
Links
- 238000007789 sealing Methods 0.000 claims description 212
- 239000000758 substrate Substances 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 6
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 308
- 239000010410 layer Substances 0.000 description 62
- 238000012545 processing Methods 0.000 description 45
- 238000000034 method Methods 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000011521 glass Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000011068 loading method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005243771A JP4006456B2 (ja) | 2005-08-25 | 2005-08-25 | 有機ｅｌディスプレイの製造方法 |
| JP2005335615A JP3936375B2 (ja) | 2005-11-21 | 2005-11-21 | 有機ｅｌ素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200721890A TW200721890A (en) | 2007-06-01 |
| TWI429323B true TWI429323B (zh) | 2014-03-01 |
Family
ID=37771534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095131019A TWI429323B (zh) | 2005-08-25 | 2006-08-23 | Organic electroluminescent element |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101234948B1 (ko) |
| TW (1) | TWI429323B (ko) |
| WO (1) | WO2007023789A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8427845B2 (en) | 2009-05-21 | 2013-04-23 | General Electric Company | Electrical connectors for optoelectronic device packaging |
| US20100294526A1 (en) * | 2009-05-21 | 2010-11-25 | General Electric Company | Hermetic electrical package |
| CN112820839B (zh) * | 2021-01-07 | 2022-08-23 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3197305B2 (ja) * | 1991-10-08 | 2001-08-13 | ティーディーケイ株式会社 | 電界発光素子の保護 |
| JP2003272834A (ja) * | 2002-03-20 | 2003-09-26 | Denso Corp | 表示装置 |
| JP2003323974A (ja) * | 2002-04-30 | 2003-11-14 | Casio Comput Co Ltd | Ｅｌパネル及びその製造方法 |
| JP4364551B2 (ja) * | 2002-05-15 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2004165068A (ja) * | 2002-11-14 | 2004-06-10 | Sanyo Electric Co Ltd | 有機電界発光パネルの製造方法 |
| JP2004342455A (ja) | 2003-05-15 | 2004-12-02 | Tokki Corp | フラットパネルディスプレイ製造装置 |
| JP2005050773A (ja) * | 2003-07-31 | 2005-02-24 | Asahi Glass Co Ltd | 有機ｌｅｄ素子 |
| JP3921482B2 (ja) * | 2004-07-28 | 2007-05-30 | トッキ株式会社 | 有機ｅｌ素子の製造装置並びに有機ｅｌ素子 |
-
2006
- 2006-08-22 KR KR1020087003595A patent/KR101234948B1/ko active IP Right Grant
- 2006-08-22 WO PCT/JP2006/316373 patent/WO2007023789A1/ja active Application Filing
- 2006-08-23 TW TW095131019A patent/TWI429323B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007023789A1 (ja) | 2007-03-01 |
| WO2007023789A8 (ja) | 2009-08-27 |
| KR20080037024A (ko) | 2008-04-29 |
| TW200721890A (en) | 2007-06-01 |
| KR101234948B1 (ko) | 2013-02-19 |
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