TWI429323B - Organic electroluminescent element - Google Patents
Organic electroluminescent element Download PDFInfo
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- TWI429323B TWI429323B TW095131019A TW95131019A TWI429323B TW I429323 B TWI429323 B TW I429323B TW 095131019 A TW095131019 A TW 095131019A TW 95131019 A TW95131019 A TW 95131019A TW I429323 B TWI429323 B TW I429323B
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- sealing film
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- 238000007789 sealing Methods 0.000 claims description 212
- 239000000758 substrate Substances 0.000 claims description 67
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 6
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 308
- 239000010410 layer Substances 0.000 description 62
- 238000012545 processing Methods 0.000 description 45
- 238000000034 method Methods 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000011521 glass Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000011068 loading method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明係為有關有機電激發光元件之構成。The present invention relates to the constitution of an organic electroluminescent device.
以往之有機電激發光元件(以下，稱為OLED)係由如以下之順序所製作。Conventional organic electroluminescence devices (hereinafter referred to as OLEDs) are produced in the following order.
(1)於玻璃基板上，以濺鍍法或蒸鍍法，將如陽極電極用ITO之金屬薄膜進行成膜，並經由光微影法而形成陽極電極配線圖案。(1) A metal thin film of ITO for an anode electrode is formed on a glass substrate by a sputtering method or a vapor deposition method, and an anode electrode wiring pattern is formed by photolithography.
(2)使用金屬光罩依序成膜正孔注入層(CuPc)，正孔輸送層(α-NPD)，發光層(Alq3 +摻雜劑)，電子輸送層(Alq3 )，電子注入層(LiF)，形成有機發光層之後，更加地，採用陰極電極用金屬光罩，將金屬薄膜(Al，Al/Li，Mn，Mn/Ag...etc.)進行成膜，並形成陰極電極配線圖案而形成發光部。(2) Forming a positive hole injection layer (CuPc), a positive hole transport layer (α-NPD), a light emitting layer (Alq 3 + dopant), an electron transport layer (Alq 3 ), and electron injection using a metal mask Layer (LiF), after forming an organic light-emitting layer, a metal film (Al, Al/Li, Mn, Mn/Ag...etc.) is formed into a film by a metal mask for a cathode electrode, and a cathode is formed. The light-emitting portion is formed by the electrode wiring pattern.
(3)於經由上述(1)及(2)之處理的取樣(發光部)上，將由無機膜的單層或層積，由有機膜的單層或層積或者無機膜極有機膜的層積膜而成的封合膜，進行成膜，此情況，如圖1，圖2所示，有著以金屬光罩B等遮弊端子部A，並作為成未將封合膜C成膜於此端子部A，形成供電端子之必要，然而，圖中符號D係為基板，E係為發光部。(3) A single layer or a layer of an inorganic film or a layer of an organic film or a layer of an inorganic film of an organic film on a sample (light emitting portion) subjected to the processes (1) and (2) As shown in Fig. 1 and Fig. 2, the sealing film formed by laminating the film is covered with a metal mask B or the like, and the sealing film C is formed as a film. The terminal portion A is required to form a power supply terminal. However, the symbol D in the figure is a substrate, and the E is a light-emitting portion.
另外，對於由任何理由而無法以金屬光罩進行遮蔽的 情況，係有需要應用所謂半導體或，TFT之光微影處理的手法。In addition, for any reason, it is impossible to cover with a metal mask. In the case, there is a need to apply a so-called semiconductor or TFT photolithography process.
作為對於上述之OLED的供電端子形成手法，現在係遮蔽屏法為一般，而作為遮蔽屏之材料，係採用矽，陶瓷，玻璃等熱膨脹係數接近之日本冶金製之NAS42(42%Ni-Fe合金)或低膨脹係之NAS(36%Ni-Fe合金)或SUS430等。As a method for forming the power supply terminal of the above OLED, the masking screen method is generally used, and as the material of the shadow mask, a solar thermal expansion coefficient such as tantalum, ceramic, glass, etc. is similar to that of the Japanese metallurgical NAS42 (42% Ni-Fe alloy). ) or a low expansion system of NAS (36% Ni-Fe alloy) or SUS430.
於如此作為而形成供電用開口部之有機電激發光元件，作為由藉由ACF(Anisotropic Conductive Film)而連接例如附有驅動器IC之FPC(Flexible Print Circuit Board)或IC裸晶片等之驅動電路的端子情況，安裝驅動電路等而製造有機EL顯示器。The organic electroluminescent device that forms the power supply opening portion is connected to a driving circuit such as an FCC (Flexible Print Circuit Board) or an IC bare chip to which an driver IC is attached by an ACF (Anisotropic Conductive Film). In the case of a terminal, an organic EL display is manufactured by mounting a drive circuit or the like.
但，對於為了確保OLED之性賴性能，係為防止大氣中之氧極水分的影響，則有必要以封合膜完全地被覆有機層與腐蝕性高之陰極電極層，此時，如將封合層作為較有機層及陰極電極層為大時，係可確保裝置性能，但產生裝置之元件面積變大之問題點。However, in order to ensure the performance of the OLED, in order to prevent the influence of oxygen in the atmosphere, it is necessary to completely coat the organic layer and the highly corrosive cathode electrode layer with a sealing film. When the layer is larger than the organic layer and the cathode electrode layer, the performance of the device can be ensured, but the problem that the component area of the device becomes large becomes large.
隨之，有必要選擇可維持裝置性能之最佳的封合面積，此時，對於利用遮蔽屏而對OLED形成供電端子部之情況，係成為有必要光罩的調整，更加地，對於為了作為攜帶用等之顯示面板而安裝OLED顯示裝置，係有必要進可能縮小顯示部以外之面積，因此，則產生提升光罩調整精確度，將設計充裕度抑制成最小限度之必要，但無法迴避高成本之情況。Accordingly, it is necessary to select an optimum sealing area that can maintain the performance of the device. In this case, when the power supply terminal portion is formed on the OLED by the shielding screen, it is necessary to adjust the mask, and more When an OLED display device is mounted on a display panel such as a portable display, it is necessary to reduce the area outside the display portion. Therefore, it is necessary to improve the adjustment accuracy of the mask, and it is necessary to minimize the design margin, but cannot avoid high. The cost situation.
另外，作為封合膜，對於交互地將無機層與有機層進行複數層成膜的情況，係成為需要有機層用之金屬光罩或無機層用之光罩，更加地，在量產線中，係亦需要光罩之自動交換機構，並且，對於將無機層與有機層的組合作為複數層形成之情況，係需要多數之預備光罩，而成為非常複雜，且高成本之設備，並且，金屬光罩係需要定期性地進行交換洗淨，而週轉資金亦產生非常高的問題。In addition, as a sealing film, when a plurality of layers of an inorganic layer and an organic layer are alternately formed, a mask for a metal mask or an inorganic layer for an organic layer is required, and more, in a mass production line. The automatic exchange mechanism of the reticle is also required, and in the case where the combination of the inorganic layer and the organic layer is formed as a plurality of layers, a large number of preliminary reticle is required, which becomes a very complicated and high-cost device, and Metal reticle systems need to be exchanged and cleaned on a regular basis, and the revolving funds also create very high problems.
為了解決對於如此之封合膜成膜時，根據使用金屬光罩之問題點，係如採用在封合成膜工程未使用金屬光罩之處理即可。In order to solve the problem of forming a film for such a sealing film, according to the problem of using a metal mask, a treatment using a metal mask in the sealing film process may be employed.
例如，如適用在半導體裝置或TFT裝置，一般所採用之最終表面穩定膜成膜之後的由光微影處理之端部露出工程即可，但，對於此工程，係成為需要光阻劑塗佈，光阻劑曝光，光阻劑顯像，蝕刻，光阻劑剥離洗淨之5工程，更加地，針對在光阻劑顯像工程，光阻劑剥離洗淨工程係有潤施工程，對於OLED製造處理係為不適合之工程之同時，產生非常高成本處理之問題。For example, if it is applied to a semiconductor device or a TFT device, it is generally necessary to expose the end portion of the final surface-stabilized film after photo-lithography processing, but for this project, it is required to apply a photoresist. , photoresist exposure, photoresist imaging, etching, photoresist stripping and cleaning 5 engineering, more, for the photoresist imaging engineering, photoresist stripping cleaning engineering department has a moist application project, for OLED manufacturing processes are unsuitable for engineering, resulting in very high cost processing issues.
更加地，對於封合膜為層積構造，且從無機層與有機層而成之情況，係針對在蝕刻工程，對於乾蝕刻之情況係有需要交換蝕刻氣體，而對於濕蝕刻之情況係有必要交換蝕刻液，並層積數越多，處理係更作為複雜化。Further, in the case where the sealing film has a laminated structure and is formed from an inorganic layer and an organic layer, it is necessary to exchange etching gas for etching in the etching process, and for wet etching. It is necessary to exchange the etching liquid, and the more the number of layers is stacked, the more complicated the processing system is.
另外，在安裝驅動電路於上述有機EL元件時，對於供電用開口部，係例如供電端子部為Al等腐蝕性金屬之情況，有以熱硬化性或UV硬化性之矽樹脂或，環氧樹 脂，固定與FPC或IC裸晶片之連接部而謀求供電端子部之腐蝕防止對策情況，但，對於這些硬化劑係現狀為無封合性，而供電用開口部係為被完全封合。In addition, when the drive circuit is mounted on the organic EL element, for example, when the power supply terminal portion is a corrosive metal such as Al, the power supply terminal portion may have a thermosetting or UV curable resin or epoxy tree. The grease is fixed to the connection portion of the FPC or the IC bare chip to prevent corrosion of the power supply terminal portion. However, the curing agent is not sealed at the present time, and the power supply opening portion is completely sealed.
因此，申請專利人係針對在專利文獻1(日本特開2006-66364號公報)，提案有未採用光罩而在將封合膜進行成膜後，只於端子部上，由根據雷射而形成供電用開口部之情況，無須進行光微影法等之麻煩的工程，而可以簡易的方法來解決上述問題點之有機EL元件之製造方法。In the case of the patent document 1 (JP-A-2006-66364), it is proposed that the sealing film is formed without using a photomask, and only the terminal portion is formed by laser. When the power supply opening portion is formed, it is possible to solve the above-described problem of the method of manufacturing the organic EL element by a simple method without performing troublesome work such as photolithography.
[專利文獻1]日本特開2006-66364號公報[Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-66364
本發明係為為了解決如上述之問題點之同時，更謀求封合性的提升，將上述專利文獻1進行各種檢討而結果完成之構成，其中，提供可由第二封合膜而遮蔽第一封合膜之開口部，並實現可良好阻止從基板垂直方向及基板水平方向雙方，對於發光部水分侵入之封合膜構成，對於封合性優越之高性賴性之有機EL元件者。The present invention is a configuration in which the above-described Patent Document 1 is subjected to various reviews in order to solve the above-mentioned problems, and the first seal is blocked by the second sealing film. In the opening of the film, the organic EL element having high sealing properties which is excellent in sealing property, which is formed by a sealing film which is formed in the vertical direction of the substrate and the horizontal direction of the substrate, and which is infiltrated into the light-emitting portion, is excellent.
參照所附圖面，說明本發明之主旨。The gist of the present invention will be described with reference to the accompanying drawings.
係為於依序層積陽極，有機發光層，陰極於基板11上而成之發光部12上，由形成封合此發光部12之封合膜 而成之有機EL元件，其特徵為，於發光部12上，形成封合此發光部12之第一封合膜13，並由照射雷射光於層積在前述陽極及陰極的端子部14上之前述前述第一封合膜13之一部分的情況，除去此端子部14上之第一封合膜13，形成供電用開口部15，並於從此供電用開口部15露出之端子部14，連接前述發光部驅動用之驅動電路16的端子17而安裝驅動電路16之後，呈完全隱蔽此供電用開口部15及前述第一封合膜13地，於基板11上形成第二封合膜18者。The sealing film is formed by laminating the anode, the organic light-emitting layer, and the cathode on the substrate 11 to form a sealing film for sealing the light-emitting portion 12 The organic EL device is characterized in that a first sealing film 13 that seals the light-emitting portion 12 is formed on the light-emitting portion 12, and is irradiated with laser light on the terminal portions 14 of the anode and the cathode. In the case of a part of the first sealing film 13, the first sealing film 13 on the terminal portion 14 is removed, and the power supply opening portion 15 is formed, and the terminal portion 14 exposed from the power supply opening portion 15 is connected. After the drive circuit 16 is mounted on the terminal 17 of the drive circuit 16 for driving the light-emitting portion, the power supply opening 15 and the first sealing film 13 are completely concealed, and the second sealing film 18 is formed on the substrate 11. .
另外，係為於依序層積陽極，有機發光層，陰極於基板31上而成之發光部32上，由形成封合此發光部32之封合膜而成之有機EL元件，其特徵為，於發光部32上，將封合此發光部32之第一封合膜33進行成膜，並由照射雷射光於層積在前述陽極及陰極的端子部34上之前述第一封合膜33之一部分的情況，除去此端子部34上之第一封合膜33，形成由前述第一封合膜33而成之側周部與，由此第一封合膜33露出之前述端子部34而成之底部所構成之第一供電用開口部35，之後，由於前述第一封合膜33上，封合前述發光部32之同時，將亦遮蔽前述第一供電用開口部35之側周部及底部的第二封合膜36，進行成膜，並照射雷射光於遮蔽前述第一供電用開口部35之底部的第二封合膜36，除去層積於前述第一供電用開口部35之底部的前述第二封合膜36而使前述端子部34露出之情況，形成使前述端子部34露出於前述第一供電用開口 部35內之第二供電用開口部37者。Further, an organic EL element in which an anode, an organic light-emitting layer, and a cathode are formed on the substrate 31 by a sealing film in which the light-emitting portion 32 is sealed is formed. The first sealing film 33 that seals the light-emitting portion 32 is formed on the light-emitting portion 32, and the first sealing film is laminated on the terminal portion 34 of the anode and the cathode by irradiating laser light. In the case of one of the portions 33, the first sealing film 33 on the terminal portion 34 is removed, and the side peripheral portion formed by the first sealing film 33 is formed, and the terminal portion from which the first sealing film 33 is exposed is formed. The first power supply opening portion 35 formed by the bottom portion 34 is formed, and the light-emitting portion 32 is sealed on the first sealing film 33, and the side of the first power supply opening portion 35 is also shielded. The second sealing film 36 of the peripheral portion and the bottom portion is formed into a film, and irradiates the second sealing film 36 which shields the bottom portion of the first power supply opening portion 35 with the laser light, and is removed from the first power supply opening. The second sealing film 36 at the bottom of the portion 35 exposes the terminal portion 34 to form a front portion The terminal portion 34 is exposed to a first supply opening The second power supply opening 37 in the portion 35.
另外，如申請專利範圍第2項之有機EL元件，其特徵為：由呈留下層積於前述第一供電用開口部35之側周部上的前述封合膜36地，照射前述雷射光於遮蔽前述第一供電用開口部35之底部的第二封合膜36而除去之情況，形成前述第二供電用開口部37之情況。Further, the organic EL device according to the second aspect of the invention is characterized in that the laser light is irradiated onto the sealing film 36 which is left on the side peripheral portion of the first power supply opening portion 35. When the second sealing film 36 at the bottom of the first power supply opening 35 is shielded and removed, the second power supply opening 37 is formed.
另外，如申請專利範圍第3項之有機EL元件，其特徵為：前述第二供電用開口部37之開口面積則成為較前述第一供電用開口部35之開口面積為小地，由照射前述雷射光於遮蔽前述第一供電用開口部35之底部的第二封合膜36而除去之情況，形成前述第二供電用開口部37之情況。Further, the organic EL device of the third aspect of the invention is characterized in that the opening area of the second power supply opening 37 is smaller than the opening area of the first power supply opening 35, and the irradiation is performed. The second light supply opening 37 is formed when the laser beam is removed by the second sealing film 36 that shields the bottom of the first power supply opening 35.
另外，如申請專利範圍第1項至第5項之任一項之有機EL元件，其特徵為：未使用光罩而將前述第一封合膜13．33或前述第二封合膜18．36，成膜於基板11．31之全表面的情況。The organic EL device according to any one of claims 1 to 5, wherein the first sealing film 13.33 or the second sealing film 18 is used without using a photomask. 36. A case where the film is formed on the entire surface of the substrate 11.31.
另外，如申請專利範圍第1項至第5項之任一項之有機EL元件，其特徵為：前述第一封合膜13．33或前述第二封合膜18．36，係各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成者。The organic EL device according to any one of claims 1 to 5, wherein the first sealing film 13.33 or the second sealing film 18.36 is each layer A plurality of layers of an organic film or a plurality of layers of an inorganic film, or a plurality of organic films or a plurality of inorganic films.
另外，如申請專利範圍第6項之有機EL元件，其特徵為：前述第一封合膜13．33或前述第二封合膜18．36，係各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成者。Further, the organic EL device according to claim 6 is characterized in that the first sealing film 13.33 or the second sealing film 18.36 is an organic film or a plurality of layers each of which is laminated. An inorganic film of a layer, or a plurality of organic films or a plurality of inorganic films.
本發明係因由如以上所構成，故可根據第二封合膜，遮蔽第一封合膜之開口端部情況，並成為實現可良好阻止從基板垂直方向及基板水平方向雙方，對於發光部水分侵入之封合膜構成，對於封合性優越之高性賴性之有機EL元件。Since the present invention is configured as described above, the opening end portion of the first sealing film can be shielded according to the second sealing film, and the moisture can be prevented from being both in the vertical direction of the substrate and in the horizontal direction of the substrate. The intrinsic sealing film is composed of an organic EL element having high sealing properties which is excellent in sealing properties.
令認為最佳之本發明的實施形態(如何實施發明？)，依據圖面，表示本發明之作用而簡單地進行說明。The embodiment of the present invention (how to implement the invention) which is considered to be optimal is shown in the drawings and shows the effect of the present invention.
於由依序成膜例如由ITO而成之陽極(陽極電極)與，正孔注入層(CuPc)，正孔輸送層(α-NPD)，發光層(Alq3 +摻雜劑)，電子輸送層(Alq3 )，電子注入層(LiF)而成之有機發光層與，由Al而成之陰極(陰極電極)於基板11上而成之發光部12上，將封合此發光部12之第一封合膜13進行成膜。The anode (anode electrode) and the positive hole injection layer (CuPc), the positive hole transport layer (α-NPD), the light-emitting layer (Alq 3 + dopant), and the electron transport layer are formed by sequentially forming a film, for example, ITO. (Alq 3 ), an organic light-emitting layer formed of an electron injecting layer (LiF) and a cathode (cathode electrode) made of Al on the substrate 11 are formed on the light-emitting portion 12, and the light-emitting portion 12 is sealed A film 13 is formed into a film.
此時，針對在申請專利範圍第1項之發明，例如未採用光罩而於發光部12之全表面，將第一封合膜13進行成膜，由只對於陽極及陰極之端子部14上的第一封合膜13，照射雷射光之情況，部分去除第一封合膜33，形成露出此端子部14之供電用開口部15。At this time, in the invention of the first application of the patent application, for example, the first sealing film 13 is formed on the entire surface of the light-emitting portion 12 without using a photomask, and is applied only to the terminal portion 14 of the anode and the cathode. When the first sealing film 13 is irradiated with the laser beam, the first sealing film 33 is partially removed, and the power supply opening portion 15 exposing the terminal portion 14 is formed.
即，因並非如以往採用光罩，將具有供電用開口部之封合膜進行成膜，而可由去除成膜於發光部12上之全表面的第一封合膜13之一部分而形成供電用開口部15，故成為無需光罩，而採用光罩時之不良情況，即，以往所需之光罩的調整機構或，預備多數光罩或，光罩之自動交換機構等，係均不需要，而成為極低成本，且亦無需定期交換洗淨光罩，故亦成為對於維護性優越之構成。In other words, the sealing film having the power supply opening is formed by forming a film, and the power supply can be formed by removing a part of the first sealing film 13 formed on the entire surface of the light-emitting portion 12. Since the opening 15 is used, it is a problem that a mask is used without using a mask, that is, an adjustment mechanism of a conventional mask, or a large number of masks or an automatic mask exchange mechanism are not required. It is extremely low-cost, and there is no need to periodically exchange the cleaning reticle, so it is also a superior structure for maintenance.
另外，對於為了謀求有機EL元件之更高密度化、高解像度化，係有需要盡可能地縮小發光部12(顯示部)以外的面積，但，採用光罩的情況，上述之光罩的維護機構之更高精細化係因成為非常高成本，故不易實現，而透過某種程度的誤差，依據充裕情況而必須設定同為發光部之間隔，但，如根據申請專利範圍第1項記載之發明，因無需光罩的調整，故均無如上述之問題，而可盡可能地縮小發光部12以外之面積情況，並可實現更高密度化、高解像度化。In addition, in order to increase the density and high resolution of the organic EL element, it is necessary to reduce the area other than the light-emitting portion 12 (display portion) as much as possible. However, in the case of using a photomask, the maintenance of the above-described mask The higher level of refinement of the organization is difficult to achieve because of its high cost. However, it is necessary to set the interval of the same portion of the light-emitting portion according to the abundance of the error. However, as described in item 1 of the patent application scope. According to the invention, since the adjustment of the mask is not required, the above problems are not obtained, and the area other than the light-emitting portion 12 can be reduced as much as possible, and higher density and higher resolution can be achieved.
另外，與光微影處理不同，因亦無需以極簡易的工程進行潤濕工程，故當然可阻止元件的劣化，而可極低成本地，將第一封合膜13進行成膜。Further, unlike the photolithography process, since it is not necessary to carry out the wetting process in an extremely simple process, it is of course possible to prevent deterioration of the element and to form the first sealing film 13 at a very low cost.
接著，於從由如上述作為而成之供電用開口部15露出之端子部14，以藉由例如ACF20，根據熱壓著連接驅動電路16之端子17的情況，安裝驅動電路16。Next, the drive circuit 16 is mounted on the terminal portion 14 exposed from the power supply opening portion 15 as described above by, for example, the ACF 20, and the terminal 17 of the drive circuit 16 is thermally pressed.
但，在此狀態中，係因未封合供電用開口部15，故有從此供電用開口部15，水分侵入之可能性。However, in this state, since the power supply opening portion 15 is not sealed, there is a possibility that moisture is intruded from the power supply opening portion 15.
因此，針對在申請專利範圍第1項記載之發明，係更加地將封合供電用開口部15之第二封合膜18，成膜於基板11上，具體來說，第二封合膜18係呈完全隱蔽前述供電用開口部15及第一封合膜13地形成，此時，例如，如將第二封合膜作為18成膜於基板全表面，亦可與上述第一封合膜13同樣地，不採用光罩而可進行成膜，更加地，對於轉入性高，而至影子的部分為止可成膜之成膜方法，例如，根據CVD法或浸漬塗佈法而成膜於基板全表面之情況，係例如，亦可於驅動電路16之底部與基板11之間的空間部，良好地進行成膜，並可由簡易的手法，確實地封合供電用開口部15。Therefore, in the invention described in the first aspect of the invention, the second sealing film 18 for sealing the power supply opening 15 is formed on the substrate 11, specifically, the second sealing film 18 The power supply opening 15 and the first sealing film 13 are completely concealed. In this case, for example, if the second sealing film is formed as 18 on the entire surface of the substrate, the first sealing film may be used. In the same manner, a film formation method can be carried out without using a photomask, and a film formation method which can form a film until the shadow portion is high, for example, a film formation method by a CVD method or a dip coating method In the case of the entire surface of the substrate, for example, the space between the bottom of the drive circuit 16 and the substrate 11 can be favorably formed, and the power supply opening 15 can be reliably sealed by a simple method.
隨之，由根據第二封合膜18封合經由雷射加工去除第一封合膜13而成之供電用開口部15之情況，可無須光罩或潤濕工程而更確實地阻止根據OLED之水分的劣化情況，另外，對於第一封合膜13，假設有缺陷部之情況，亦可修補此缺陷部，由此，將可製造高精細之有機EL顯示器。In the case where the power supply opening portion 15 obtained by removing the first sealing film 13 by laser processing is sealed by the second sealing film 18, it is possible to more reliably prevent the OLED according to the OLED without the need for a mask or a wetting process. In the case where the first sealing film 13 is defective, the defective portion can be repaired, and thus a high-definition organic EL display can be manufactured.
另外，針對在申請專利範圍第2項之發明，於由依序成膜例如由ITO而成之陽極(陽極電極)與，正孔注入層(CuPc)，正孔輸送層(α-NPD)，發光層(Alq3 +摻雜劑)，電子輸送層(Alq3 )，電子注入層(LiF)而成之有機發光層與，由Al而成之陰極(陰極電極)於基板11上而成之發光部32上，將封合此發光部32之第一封合膜33進行成膜之後，接著，照射雷射光於層積在發光部32 之端子部34上的第一封合膜13之一部分而除去，並形成由側周部(第一封合膜138)與底部(從第一封合膜13露出之端子部34)而成之第一供電用開口部35。Further, in the invention of claim 2, the anode (anode electrode) and the positive hole injection layer (CuPc), the positive hole transport layer (α-NPD), and the light are formed by sequentially forming a film, for example, ITO. a layer (Alq 3 + dopant), an electron transport layer (Alq 3 ), an organic light-emitting layer (LiF), and a cathode (cathode electrode) made of Al on the substrate 11 In the portion 32, after the first sealing film 33 that seals the light-emitting portion 32 is formed, a portion of the first sealing film 13 laminated on the terminal portion 34 of the light-emitting portion 32 is irradiated with the laser light. The first power supply opening portion 35 formed by the side peripheral portion (first sealing film 138) and the bottom portion (the terminal portion 34 exposed from the first sealing film 13) is formed.
接著，亦呈隱部前述第一供電用開口部35之周側部及底部地，將第二封合膜36成膜於第一封合膜33上，由此，由層積第二封合膜36於第一封合膜33之情況，即使對於第一封合膜33與第二封合膜36各自有缺陷，亦可相互進行修補，並可更確實地阻止從對於發光部32之基板垂直方向之水分侵入之情況。Next, the second sealing film 36 is formed on the first sealing film 33 by forming the second sealing film 36 on the circumferential side and the bottom of the first power supply opening 35. In the case of the first sealing film 33, even if the first sealing film 33 and the second sealing film 36 are defective, they can be repaired each other, and the substrate from the light-emitting portion 32 can be more reliably prevented. Water intrusion in the vertical direction.
接著，照射雷射光於隱蔽第一供電用開口部35之底部的第二封合膜36而除去層積在前述底部上之第二封合膜36，保持根據第二封合膜36隱蔽第一供電用開口部35之側周部之狀態，形成露出端子部34於第一供電用開口部35內之第二供電用開口部37。Next, the second sealing film 36 laminated on the bottom portion is removed by irradiating the laser light to the second sealing film 36 concealing the bottom of the first power supply opening portion 35, and the first sealing film 36 is concealed according to the second sealing film 36. In the state of the side peripheral portion of the power supply opening portion 35, the second power supply opening portion 37 in which the terminal portion 34 is exposed in the first power supply opening portion 35 is formed.
隨之，由根據第二封合膜36隱蔽第一供電用開口部35之側周部之情況，亦可阻止從對於發光部32之基板平行方向之水分侵入之情況，即，例如，採用將第一封合膜成膜於發光部之後，未形成供電用開口部於此第一封合膜而將第二封合膜進行層積成膜，對於第一封合膜與第二封合膜，彙整形成供電用開口部之方法的情況，第一封合膜與第二封合膜之開口端部(側周部)則露出，而從基板平行方向水分侵入之可能性則變高，但，針對在申請專利範圍第2項之發明，係因呈保持根據第二封合膜36隱蔽第一封合膜33之側周部之狀態地(呈留下層積於第一供電 用開口部35之側周部上之第二封合膜36地)，除去層積於第一供電用開口部35之底部上之第二封合膜36，故可不使第一封合膜33之側周部露出而只使端子部34露出情況，並由此，可良好地阻止從其第一封合膜33之側周部之水分的侵入情況。In the case where the side peripheral portion of the first power supply opening portion 35 is concealed by the second sealing film 36, moisture intrusion from the substrate parallel direction with respect to the light-emitting portion 32 can be prevented, that is, for example, After the first film is formed in the light-emitting portion, the power supply opening portion is not formed, and the second sealing film is laminated on the first sealing film, and the first sealing film and the second sealing film are formed. In the case where the method of forming the power supply opening portion is formed, the opening end portions (side peripheral portions) of the first sealing film and the second sealing film are exposed, and the possibility of moisture intrusion from the parallel direction of the substrate is increased, but For the invention according to the second aspect of the patent application, the state in which the side peripheral portion of the first sealing film 33 is concealed according to the second sealing film 36 is maintained (being left to be laminated on the first power supply) The second sealing film 36 laminated on the bottom of the first power supply opening 35 is removed by the second sealing film 36 on the side peripheral portion of the opening 35, so that the first sealing film 33 is not required to be used. When the peripheral portion of the side is exposed and only the terminal portion 34 is exposed, the intrusion of moisture from the peripheral portion of the first sealing film 33 can be satisfactorily prevented.
關於本發明之具體的實施例1，依據圖面進行說明。Specific embodiment 1 of the present invention will be described based on the drawings.
實施例1係為於依序層積陽極，有機發光層，陰極於基板11上而成之發光部12上，由形成封合此發光部12之封合膜而成之有機EL元件，其中，於前述發光部12上，形成封合此發光部12之第一封合膜13，並由照射雷射光於層積在前述陽極或陰極的端子部14上之前述前述第一封合膜13之一部分的情況，除去此端子部14上之第一封合膜13，形成供電用開口部15，並於從此供電用開口部15露出之端子部14，連接前述發光部驅動用之驅動電路16的端子17而安裝驅動電路16之後，呈完全隱蔽此供電用開口部15及前述第一封合膜13地，於基板11上形成第二封合膜18者。In the first embodiment, the organic EL element is formed by forming a sealing film in which the anode, the organic light-emitting layer, and the cathode are formed on the substrate 11, and a sealing film that seals the light-emitting portion 12 is formed. The first sealing film 13 that seals the light-emitting portion 12 is formed on the light-emitting portion 12, and the first sealing film 13 is laminated on the terminal portion 14 of the anode or the cathode by irradiating laser light. In some cases, the first sealing film 13 on the terminal portion 14 is removed to form the power supply opening portion 15, and the terminal portion 14 exposed from the power supply opening portion 15 is connected to the driving circuit 16 for driving the light-emitting portion. After the drive circuit 16 is mounted on the terminal 17, the power supply opening 15 and the first sealing film 13 are completely concealed, and the second sealing film 18 is formed on the substrate 11.
有機EL元件係採用如圖6所示之有機EL元件製造裝置而製造。The organic EL device was produced by using an organic EL device manufacturing apparatus as shown in FIG.
例如，如圖6所示，將形成有根據光微影法而形成之陽極配線ITO電極之玻璃基板11，收納於裝入室，並進行真空排氣，接著，開啟閘閥，將前述玻璃基板11移動 至被進行真空排氣之電漿洗淨室，再導入氧氣，並根據高頻率生成氧電漿，進行表面處理，接著，將前述玻璃基板11移動至被進行真空排氣之第一有機成膜室，並將正孔注入層進行蒸鍍成膜，更加地，移動前述玻璃基板11於被進行真空排氣之各有機成膜室(2~4)，並將各紅，綠，藍之發光層進行成膜。For example, as shown in FIG. 6, the glass substrate 11 on which the anode wiring ITO electrode formed by the photolithography method is formed is accommodated in the loading chamber, vacuum evacuation is performed, and then the gate valve is opened, and the glass substrate 11 is opened. mobile The plasma cleaning chamber is evacuated, oxygen is introduced, and oxygen plasma is generated according to a high frequency to perform surface treatment, and then the glass substrate 11 is moved to the first organic film which is vacuum-exhausted. In the chamber, the positive hole injection layer is vapor-deposited to form a film, and the glass substrate 11 is further moved to the respective organic film forming chambers (2 to 4) subjected to vacuum evacuation, and the red, green, and blue lights are emitted. The layer is formed into a film.
更加地，移動前述玻璃基板11於被進行真空排氣之有機成膜室5，再將電子輸送層進行蒸鍍成膜，更加地，在被進行真空排氣之成膜室6，將電子注入層進行蒸鍍成膜，並在被進行真空排氣之金屬電極蒸鍍室，將陰極配線電極膜進行成膜。Further, the glass substrate 11 is moved in the organic film forming chamber 5 that is evacuated, and the electron transport layer is vapor-deposited to form a film. Further, in the film forming chamber 6 where the vacuum is evacuated, electrons are injected. The layer was deposited by vapor deposition, and the cathode wiring electrode film was formed into a film in a metal electrode deposition chamber that was evacuated.
接著，移動前述玻璃基板11至被進行真空排氣或氮置換之第一雷射加工室，並經由雷射而形成陰極配線電極。Next, the glass substrate 11 is moved to a first laser processing chamber that is subjected to vacuum evacuation or nitrogen replacement, and a cathode wiring electrode is formed via laser irradiation.
接著，移動前述玻璃基板11至被進行真空排氣或氮置換之薄膜封合室，並形成第一封合膜13。Next, the glass substrate 11 is moved to a film sealing chamber subjected to vacuum evacuation or nitrogen replacement, and a first sealing film 13 is formed.
對於此薄膜封合室，係設置有根據濺鍍法或真空蒸鍍法，將第一封合膜13進行成膜之封合膜形成機構，並根據此封合膜形成機構，將由各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成之層積膜，成膜於基板11之略全面(參照圖3)。In the film sealing chamber, a sealing film forming mechanism for forming a first sealing film 13 by a sputtering method or a vacuum deposition method is provided, and according to the sealing film forming mechanism, each layer is formed by a layer. A laminated film of an organic film of a plurality of layers or an inorganic film of a plurality of layers or a plurality of organic films or a plurality of inorganic films is formed on the substrate 11 to be slightly integrated (see FIG. 3).
作為無機膜，係例如採用矽氧化膜(SiO2 )，矽氮化物(SiN，SiON)，氧化鋁(AlOX )等，例外，作為有機膜，係採用環氧系，聚醯亞胺系，丙烯酸系，矽系之熱硬 化型或UV硬化型或者熱硬化及UV硬化併用型之樹脂等。As the inorganic film, for example, a tantalum oxide film (SiO 2 ), a niobium nitride (SiN, SiON), or an aluminum oxide (AlO X ) is used, and as the organic film, an epoxy-based or poly-imide-based alloy is used. Acrylic, bismuth-based thermosetting or UV-curing or thermosetting and UV-curing resins.
更加地，移動前述玻璃基板11至第二雷射加工室，並經由雷射除去端子部14上之第一封合膜13，形成從供電用開口部15露出之供電端子部。Further, the glass substrate 11 to the second laser processing chamber are moved, and the first sealing film 13 on the terminal portion 14 is removed by laser to form a power supply terminal portion exposed from the power supply opening portion 15.
對於第二雷射加工室，係設置有振盪作為封合膜除去機構之雷射光的雷射振盪器(光源)與，作為由驅動前述基板11而將從雷射振盪器的雷射光，照射至前述端子部14上之第一封合膜13的規定部位之驅動部之具有載置基板之X，Y載置台的雷射加工裝置，並作為雷射振盪器，採用氣體雷射振盪器或固體雷射振盪器，然而，針對在實施例1，係作為設置驅動基板11之驅動部的構成，但，亦可作為設置驅動雷射振盪器之驅動部的構成。The second laser processing chamber is provided with a laser oscillator (light source) that oscillates the laser light as a sealing film removing mechanism, and irradiates the laser light from the laser oscillator to the substrate 11 by driving the substrate The driving portion of the predetermined portion of the first sealing film 13 on the terminal portion 14 has a laser processing device for placing the substrate on the X, Y mounting table, and as a laser oscillator, a gas laser oscillator or a solid is used. In the first embodiment, the laser oscillator is provided as a drive unit for driving the drive substrate 11, but it may be configured to provide a drive unit for driving the laser oscillator.
例如，作為前述氣體雷射振盪器，係採用CO2 ，KrF，ArF，F2 ，XeCl，XeF或HeCd雷射振盪器即可，而作為前述固體雷射振盪器係採用Ti藍寶石，YAG或YVO4 雷射振盪器即可。For example, as the gas laser oscillator, a CO 2 , KrF, ArF, F 2 , XeCl, XeF or HeCd laser oscillator may be used, and as the solid laser oscillator, Ti sapphire, YAG or YVO is used. 4 laser oscillators can be.
具體來說，前述封合膜除去工程，將係各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成之層積膜內，因應任何一層的波長吸收特性之波長的雷射光進行照射，可成一次去除複數層地構成，即，無須一層一層除去層積膜，而根據選定最佳之同一家光條件情況，可無須變更雷射種類而去除由層積膜而成之第一封合膜，例如，作為雷射，採用具有最下層的膜 容易吸收之波長之雷射(或作為最下層的膜，採用由容易吸收雷射的波長之材料而成之構成)，並由除去此最下層的膜之情況而設定為可彙整除去層積在其上方的膜，然而，由去除並非最下層的膜之情況，亦可設定為可除去複數的膜。Specifically, in the sealing film removal process, each layer is formed by laminating a plurality of layers of an organic film or a plurality of layers of an inorganic film, or a plurality of organic films or a plurality of inorganic films. Irradiation of the laser light having the wavelength absorption characteristic can be performed by removing a plurality of layers at a time, that is, it is not necessary to remove the laminated film layer by layer, and the laser light type can be changed without depending on the optimal light condition selected. Removing the first sealing film formed by laminating the film, for example, as a laser, using the film having the lowermost layer a laser that absorbs light at a wavelength (or a lowermost film, which is made of a material that absorbs the wavelength of the laser), and is set to be detachable by removing the film of the lowermost layer. The film above it, however, may be set to remove a plurality of films by removing the film which is not the lowermost layer.
隨之，在除去層積複數之有機膜或無機膜的層積膜之情況，亦無須一層一層除去，而由一個工程，可簡單且有效率地除去第一封合膜13而形成供電用開口部。Accordingly, in the case of removing the laminated film of the organic film or the inorganic film of a plurality of layers, it is not necessary to remove one layer at a time, and the first sealing film 13 can be easily and efficiently removed by one process to form a power supply opening. unit.
另外，針對在實施例1，係並未完全去除端子部14上之第一封合膜13，而如圖4所示，呈設定為除去一部分，具體來說，係將端子部14之連接端子19上之一部分的第一封合膜13，設定為呈除去成長方形狀，隨之，供電用開口部15的大小係以最小即可完成，由此，良好地發揮根據第一封合膜13之封合作用。Further, in the first embodiment, the first sealing film 13 on the terminal portion 14 is not completely removed, and as shown in FIG. 4, it is set to remove a part, specifically, the connection terminal of the terminal portion 14. The first sealing film 13 of one of the upper portions of the first sealing film 13 is set to have a shape in which the growth is removed, and the size of the power supply opening portion 15 is minimized, whereby the first sealing film 13 is satisfactorily exhibited. The cooperation of the seal.
另外，亦可作為具備：由照射雷射光在層積成膜於前述發光部12上之第一封合膜13的周緣部情況而閉塞之封合周緣部閉塞機構之構成，另，如此根據閉塞封合周緣部之情況，封合作用係成為更佳，並可盡可能阻止元件的劣化，具體來說，此封合周緣部閉塞機構係亦可作為將上述第二雷射加工室，與封合膜去除機構間用之構成，而亦可作為另外設置雷射加工室之工程。In addition, the sealing peripheral portion closing mechanism that is closed by the peripheral portion of the first sealing film 13 formed by laminating the laser light on the light-emitting portion 12 may be configured to be closed. In the case of sealing the peripheral portion, the sealing cooperation system is more preferable, and the deterioration of the component can be prevented as much as possible. Specifically, the sealing peripheral portion blocking mechanism can also serve as the second laser processing chamber and the sealing device. It can be used as a separate laser processing room.
另外，對於此情況，前述第一封合膜13則呈包含：只對於照射前述雷射光之周緣部，含有熱硬化性成分而成膜之有機膜或，只對於前述周緣部，含有成膜之前述熱硬 化性成份之有機膜或，遍佈所有基板前面，含有熱硬化性成份而成膜之有機膜地，設定前述封合膜形成機構即可。In addition, in this case, the first sealing film 13 includes an organic film containing only a thermosetting component for irradiating the peripheral portion of the laser light, or a film forming film only for the peripheral portion. The aforementioned hot hard The organic film of the chemical component may be an organic film formed of a film containing a thermosetting component in front of all the substrates, and the sealing film forming mechanism may be set.
以上，關於前述實施例之有機成膜係想定為低分子有機EL材料，並關於就真空真鍍法進行說明。As described above, the organic film forming system of the above embodiment is intended to be a low molecular organic EL material, and a vacuum true plating method will be described.
作為其他實施例，關於就高分子有機EL材料之有機成膜，係亦可採用噴墨法。As another embodiment, an inkjet method may be employed for organic film formation of a polymer organic EL material.
另外，對於更加地將高分子有機材料，利用旋塗法，噴射法之情況，係亦考慮追加真空排氣或真空置換之乾燥室或，在雷射加工室，將有機成膜進行圖案化形成之實施例。Further, in the case where the polymer organic material is further subjected to the spin coating method or the jet method, a drying chamber in which vacuum evacuation or vacuum replacement is added is also considered, and the organic film formation is patterned in the laser processing chamber. An embodiment.
作為其他的實施例，針對在於具有運送基板至各處理室之機構的運送室周圍，具有裝入室，電漿洗淨室，有機成膜室，濺鍍室，CVD室，金屬電極蒸鍍室，薄膜封合室及排出室之有機EL元件製造裝置，作為將有機成膜室，濺鍍室，CVD室，金屬電極蒸鍍室，薄膜封合室之中至少一台以上之處理室與，一台或複數台之雷射加工室一體化之有機EL元件製造裝置。As another embodiment, there is a loading chamber, a plasma cleaning chamber, an organic film forming chamber, a sputtering chamber, a CVD chamber, and a metal electrode evaporation chamber around a transportation chamber having a mechanism for transporting a substrate to each processing chamber. The organic EL device manufacturing apparatus of the film sealing chamber and the discharge chamber is a processing chamber for at least one of an organic film forming chamber, a sputtering chamber, a CVD chamber, a metal electrode vapor deposition chamber, and a film sealing chamber. An organic EL device manufacturing device in which one or a plurality of laser processing chambers are integrated.
另外，於沿著前述運送室之周圍或前述運送室之運送方向的位置，配設前述處理室之同時，配設前述雷射加工室。Further, the laser processing chamber is disposed at the same time as the processing chamber is disposed along the periphery of the transport chamber or in the transport direction of the transport chamber.
另外，前述有機成膜室，濺鍍室，CVD室，金屬電極蒸鍍室，薄膜封合室及雷射加工室內的環境係為根據真空環境或Ar等不活性氣體或氮氣等之非氧化性環境，且露點則作為-50℃以下之乾燥環境。Further, the environment of the organic film forming chamber, the sputtering chamber, the CVD chamber, the metal electrode vapor deposition chamber, the film sealing chamber, and the laser processing chamber is non-oxidizing depending on a vacuum environment or an inert gas such as Ar or nitrogen. Environment, and the dew point is used as a dry environment below -50 °C.
另外，前述有機成膜室係具有：將有機材料或金屬材料，採用電阻加熱，電子光束加熱，高頻率誘導加熱等之蒸鍍源加熱手段及，將高分子有機材料，採用包含噴墨法，旋塗法，網版印刷法之各種印刷法或噴射印刷法而進行成膜之手段，並濺鍍室係具有：將有機材料或絕緣材料，採用常規，磁管控，離子束，ECR等之濺鍍法而進行成膜之手段，而CVD室係具有：將金屬材料或絕緣材料，採用減壓，常壓，電漿法而進行成膜之手段，金屬電極蒸鍍室係具有：將金屬材料，以電阻加熱，電子光束加熱，高頻率誘導加熱等之蒸鍍源加熱手段。Further, the organic film forming chamber has a vapor deposition source heating means for heating an organic material or a metal material by electric resistance heating, electron beam heating, high frequency induction heating, and the like, and the polymer organic material is contained by an inkjet method. Spin coating method, screen printing method of various printing methods or spray printing method for film formation, and sputtering chamber has: organic material or insulating material, using conventional, magnetic tube control, ion beam, ECR, etc. The method of forming a film by a plating method, and the CVD chamber has a means for forming a film by using a metal material or an insulating material by a reduced pressure, a normal pressure, or a plasma method, and the metal electrode vapor deposition chamber has a metal material. The heating means of the evaporation source such as resistance heating, electron beam heating, high frequency induction heating, and the like.
另外，薄膜封合室係具有：附加根據作為與大氣環境遮斷之情況，防止大氣環境中的水及氧直接與有機EL元件表面接觸情況之機能的封合膜之手段，而前述雷射加工室係具有：由雷射光，將透明導電膜，有機EL膜，金屬電極膜，氧化矽，氮化矽，氧化鋁等之陶瓷膜，進行加工的手段。In addition, the film sealing chamber has a means for attaching a sealing film to prevent the water and oxygen in the atmosphere from directly contacting the surface of the organic EL element as a condition of being interrupted from the atmospheric environment, and the laser processing is performed. The chamber system has a means for processing a ceramic film of a transparent conductive film, an organic EL film, a metal electrode film, yttrium oxide, tantalum nitride, or aluminum oxide by laser light.
在實施例1之中，係作為於具有運送基板至前述各處理室之機構的前述運送室周圍，設置裝入室，電漿洗淨室，第一有機成膜室，第二有機成膜室，有機成膜室3，陰極金屬蒸鍍室，雷射加工室，薄膜封合室及排出室之構成。In the first embodiment, a loading chamber, a plasma cleaning chamber, a first organic film forming chamber, and a second organic film forming chamber are provided around the transport chamber having a mechanism for transporting the substrate to each of the processing chambers. The organic film forming chamber 3, the cathode metal vapor deposition chamber, the laser processing chamber, the film sealing chamber and the discharge chamber.
另外，亦可作為於具有運送基板至前述各處理室之機構的前述運送室周圍，設置裝入室，電漿洗淨室，濺鍍室(透明導電膜形成)，第一雷射加工室，第一有機成膜 室，第二有機成膜室，有機成膜室3，金屬電極蒸鍍室，第二雷射加工室，薄膜封合室及排出室之構成。Further, a loading chamber, a plasma cleaning chamber, a sputtering chamber (formed by a transparent conductive film), and a first laser processing chamber may be provided around the transfer chamber having a mechanism for transporting the substrate to each of the processing chambers. First organic film formation The chamber, the second organic film forming chamber, the organic film forming chamber 3, the metal electrode vapor deposition chamber, the second laser processing chamber, the film sealing chamber and the discharge chamber.
另外，亦可作為於具有運送基板至各處理室之機構的運送室周圍，設置裝入室，電漿洗淨室，濺鍍室(透明導電膜形成)，第一雷射加工室，第一有機成膜室，第二有機成膜室，有機成膜室3，金屬電極蒸鍍室，第二雷射加工室，薄膜封合室，雷射加工室3及排出室之構成。In addition, as a storage chamber having a mechanism for transporting the substrate to each processing chamber, a loading chamber, a plasma cleaning chamber, a sputtering chamber (formed by a transparent conductive film), and a first laser processing chamber may be provided. The organic film forming chamber, the second organic film forming chamber, the organic film forming chamber 3, the metal electrode vapor deposition chamber, the second laser processing chamber, the film sealing chamber, the laser processing chamber 3, and the discharge chamber.
另外，亦可作為於具有運送基板至各處理室之機構的運送室周圍，設置裝入室，電漿洗淨室，濺鍍室(透明導電膜形成)，雷射加工室及排出室之構成。In addition, it is also possible to provide a loading chamber, a plasma cleaning chamber, a sputtering chamber (formed by a transparent conductive film), a laser processing chamber, and a discharge chamber around a transport chamber having a mechanism for transporting the substrate to each processing chamber. .
前述裝入室兼具前述排出室之情況係亦可只有裝入室。In the case where the loading chamber has both the discharge chamber, it is also possible to have only the loading chamber.
另外，將雷射加工室作為複數室，但亦可只由一室來兼具。In addition, the laser processing chamber is used as a plurality of chambers, but it may be combined by only one chamber.
另外，亦可將有機成膜室作為三室，而亦可由一室來兼具，當然亦可作為四室以上。Further, the organic film forming chamber may be used as a three-chamber, or may be a single chamber, or may be used as four or more chambers.
另外，在實施例1中，係將各處理室與雷射加工室配設於運送室之周圍(通稱：分組方式)，但亦可作為，於如圖7所示之運送室之運送方向，依序將各處理室與雷射加工室作為縱列(通稱：水平方式)之構成。Further, in the first embodiment, each processing chamber and the laser processing chamber are disposed around the transport chamber (generally referred to as a grouping method), but may be used as a transporting direction of the transport chamber as shown in FIG. Each processing chamber and the laser processing chamber are sequentially arranged as a column (generally referred to as a horizontal method).
接著，於如上述作為而製作之有機EL元件，連接安裝有機EL元件(發光部12)驅動用之驅動電路16，具體來說，係作為驅動電路16，係採用搭載IC裸晶片或驅動之FPC。Then, the organic EL element produced as described above is connected to the drive circuit 16 for driving the organic EL element (light-emitting unit 12). Specifically, the drive circuit 16 is an FPC equipped with an IC bare wafer or a driver. .
另外，安裝形態，係亦均可採用例如，藉由FPC或TAB而連接之構成或，直接安裝驅動-裸晶片IC於基板上之COG(Chip On Glass)等。Further, in the mounting form, for example, a configuration in which FPC or TAB is connected or a COG (Chip On Glass) on which a drive-bare chip IC is mounted on a substrate can be directly mounted.
針對在實施例1，係如圖4，5所示，由連接採用FPC之驅動電路16(附有驅動IC之FPC)的端子17於前述端子部14之連接端子19的情況，安裝驅動電路16於基板11上。In the first embodiment, as shown in FIGS. 4 and 5, the drive circuit 16 is mounted by connecting the terminal 17 of the drive circuit 16 (FPC with the drive IC) of the FPC to the connection terminal 19 of the terminal portion 14. On the substrate 11.
具體來說，如上述，由藉由ACF20(異方性導電膜)，根據熱壓著連接從形成於第一封合膜13之供電用開口部15露出之端子部14(ITO膜)的連接端子19或，陰極之端子部14的連接端子19與，驅動電路16的端子17(驅動電路配線圖案)情況，安裝驅動電路16於基板11上，然而，圖中符號21係為含於ACF20之導電粒子。Specifically, as described above, the connection of the terminal portion 14 (ITO film) exposed from the power supply opening portion 15 formed in the first sealing film 13 by the ACF 20 (the anisotropic conductive film) is thermally bonded. In the case of the terminal 19 or the connection terminal 19 of the terminal portion 14 of the cathode and the terminal 17 (drive circuit wiring pattern) of the drive circuit 16, the drive circuit 16 is mounted on the substrate 11, however, the symbol 21 in the figure is included in the ACF20. Conductive particles.
然而，雖無圖示，根據COG連接而安裝驅動電路1(驅動-裸晶片IC)之情況，亦可於從根據第一封合膜13而包覆全面之玻璃基板上之有機EL元件之引出配線的端部上面，根據雷射加工，形成供電開口部，並由藉由ACF20之情況，根據熱壓著連接驅動電路16情況。However, although the driver circuit 1 (drive-bare chip IC) is mounted in accordance with the COG connection, the organic EL element on the glass substrate coated on the entire surface of the glass substrate according to the first sealing film 13 may be taken out. On the upper end portion of the wiring, the power supply opening portion is formed by laser processing, and the driving circuit 16 is connected by heat pressing by the ACF 20.
接著，將安裝於基板11上之驅動電路16及，成為基底之前述第一封合膜13之任一，亦作為呈完全隱蔽地，將第二封合膜13進行成膜，隨之，由可不使用光罩而簡易地完全封合供電用開口部15，確實防止從雷射加工時之唯一掛念事項之供電用開口部15的大氣中之氧或水分等侵入之同時，亦可完全隱蔽位在其外緣之第一封合膜13 之情況，實現更確實之封合，另，作為成膜方法，係理想採用浸漬塗佈或電漿CVD法等之轉入性佳，前述IC裸晶片與基板11之間等，至影子的部分為止可確實成膜之成膜方法。Next, the drive circuit 16 mounted on the substrate 11 and the first sealing film 13 as the base are formed, and the second sealing film 13 is formed as a completely concealed film. It is possible to completely seal the power supply opening portion 15 without using a photomask, and it is possible to prevent the intrusion of oxygen or moisture in the atmosphere of the power supply opening portion 15 which is the only thing of concern during laser processing, and to completely hide the position. First sealing film 13 at its outer edge In other cases, it is preferable to use a dip coating or a plasma CVD method as the film forming method, and the transfer between the IC bare wafer and the substrate 11 to the shadow portion is preferable. The film formation method can be surely formed.
針對在實施例1，係由將安裝前述驅動電路16之基板11，浸漬於儲存有成膜溶液之儲存槽之後，由使其乾燥而進行加熱處理之情況而進行成膜(浸漬塗佈法)。In the first embodiment, the substrate 11 on which the drive circuit 16 is mounted is immersed in a storage tank in which a film formation solution is stored, and then dried by heating to form a film (dip coating method). .
接著，將組裝有控制前述驅動電路16之控制器或其他電子部件等之印刷基板(PCB：Printed Circuit Board)，安裝於基板11，再由安裝電纜或框體之情況，製造有機EL顯示器。Next, a printed circuit board (PCB: Printed Circuit Board) in which a controller or other electronic component that controls the drive circuit 16 is mounted is mounted on the substrate 11, and an organic EL display is manufactured by mounting a cable or a casing.
實施例1係因如上述作成，故於未使用金屬光罩而將封合膜進行成膜之後，根據採用雷射加工法而形成其OLED顯示裝置之供電端子部之情況，將可製造可確保面板之小尺寸化與高性賴性之OLED，例如，根據於將製造OLED之情況作為目的之分組型的有機EL元件製造裝置，設置雷射加工室(封合膜除去機構)與封合薄膜室(封合膜成膜機構)之情況，將可製造高精確度，高密度，高性能之OLED。Since the first embodiment is formed as described above, after the sealing film is formed without using a metal mask, the power supply terminal portion of the OLED display device can be formed by laser processing. In the OLED of the small-sized and high-quality panel, for example, a laser processing chamber (sealed film removal mechanism) and a sealing film are provided in accordance with a group-type organic EL element manufacturing apparatus for the purpose of manufacturing an OLED. In the case of a chamber (sealed film forming mechanism), a high-accuracy, high-density, high-performance OLED can be manufactured.
另外，根據對於封合膜成膜機構未使用金屬光罩之情況，將無需金屬光罩之交換機構，調整機構，金屬光罩及蒸鍍托盤等之移動機構，而裝置係作為非常簡略化，因此，根據裝置成本的降低，不良情況及維護頻度之降低，謀求裝置嫁動率之提升。Further, according to the case where the metal film mask is not used for the sealing film forming mechanism, the moving mechanism of the metal mask, the adjustment mechanism, the metal mask, and the vapor deposition tray is not required, and the apparatus is very simplified. Therefore, according to the reduction of the cost of the device, the failure and the frequency of maintenance are reduced, and the device marriage rate is improved.
更加地，亦可大幅地削減金屬光罩成本，金屬光罩及裝著托盤，這些的洗淨工程與，週轉資金情況。More, the cost of metal masks, metal reticle and trays can be greatly reduced, as well as the cleaning work and the working capital.
另外，在封合膜為層機構造之情況，對於雷射加工之情況，係亦可根據對各異種光罩，無變更雷射種類而選定最佳之同一加工條件，進行供電端子部之封合膜開口加工。Further, in the case where the sealing film has a layering structure, in the case of laser processing, the same processing conditions can be selected for the different types of masks without changing the type of laser, and the power supply terminal portion can be sealed. Film opening processing.
另外，如作為呈由照射雷射情況而閉塞封合膜之周緣部之構成，可將此封合膜的封合作用作為更佳，並盡可能地阻止根據此封合膜所封合之發光部的劣化情況。Further, as a configuration in which the peripheral portion of the sealing film is closed by irradiation of the laser, the sealing of the sealing film can be preferably performed, and the light emitted by the sealing film can be prevented as much as possible. The deterioration of the department.
更加地，可由簡易的手法，確實防止從前述供電用開口部之水分等之侵入，由此，可製造高精細之有機EL顯示器。Further, it is possible to reliably prevent the intrusion of moisture or the like from the power supply opening portion by a simple method, thereby producing a high-definition organic EL display.
隨之，實施例1係不只可單以廉價且效率佳地製造前述有機EL元件，而可製造極高品質，且商品價值高的有機EL顯示器。In the same manner, in the first embodiment, the organic EL device can be manufactured at a low cost and with high efficiency, and an organic EL display having extremely high quality and high commercial value can be produced.
實施例2係為採用與實施例1不同之封合膜構造之情況，而其餘係與實施例1相同。In the second embodiment, the sealing film structure different from that of the first embodiment is used, and the rest is the same as in the first embodiment.
具體來說，實施例2係如圖8~11所示，於依序層積陽極，有機化合物層，陰極於基板31上而成之發光部32上，由形成封合此發光部32之封合膜而成之有機EL元件，其中，以於前述發光部32上，將封合此發光部32之第一封合膜33進行成膜，並由照射雷射光於層積在前述 陽極及陰極的端子部34上之前述第一封合膜33之一部分的情況，除去此端子部34上之第一封合膜33之情況，形成由前述第一封合膜33而成之側周部與，由此第一封合膜33露出之前述端子部34而成之底部所構成之第一供電用開口部35，之後，以於前述第一封合膜33上，封合前述發光部32之同時，將亦遮蔽前述第一供電用開口部35之側周部及底部的第二封合膜36，進行成膜，並照射雷射光於遮蔽前述第一供電用開口部35之底部的第二封合膜36，除去層積於前述第一供電用開口部35之底部的前述第二封合膜36而使前述端子部34露出之情況，形成使前述端子部34露出於前述第一供電用開口部35內之第二供電用開口部37者。Specifically, in the second embodiment, as shown in FIGS. 8 to 11, the anode, the organic compound layer, and the cathode are formed on the substrate 31, and the light-emitting portion 32 is formed by sealing the light-emitting portion 32. In the organic EL device in which the light-emitting portion 32 is formed, the first sealing film 33 that seals the light-emitting portion 32 is formed into a film, and the laser beam is irradiated on the laminate. When one of the first sealing films 33 on the terminal portion 34 of the anode and the cathode is removed, the first sealing film 33 on the terminal portion 34 is removed, and the side formed by the first sealing film 33 is formed. The first power supply opening 35 formed by the bottom portion of the terminal portion 34 from which the first sealing film 33 is exposed is formed, and then the light is sealed on the first sealing film 33. At the same time as the portion 32, the second sealing film 36 on the side peripheral portion and the bottom portion of the first power supply opening portion 35 is also shielded, and the laser beam is irradiated to shield the bottom portion of the first power supply opening portion 35. The second sealing film 36 removes the second sealing film 36 laminated on the bottom of the first power supply opening 35 and exposes the terminal portion 34, thereby exposing the terminal portion 34 to the first portion. The second power supply opening 37 in the power supply opening 35.
即，實施例2係與實施例1相同，將於形成有電極及發光層之玻璃基板31上，各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成之層積膜，成膜於基板31之略全面(參照圖8。在圖8中，第一封合膜33係隱蔽於第二封合膜36，但與第二封合膜36同樣地，成膜於基板31之略全面)，並更加地，針對在第二雷射加工室，根據雷射而除去端子部34上之第一封合膜33，再形成從第一供電用開口部35露出之供電端子部(參照圖9，10)。That is, in the second embodiment, as in the first embodiment, an organic film or a plurality of layers of an organic film or a plurality of organic films or a plurality of organic films or a plurality of layers are laminated on the glass substrate 31 on which the electrode and the light-emitting layer are formed. A laminated film made of an inorganic film is formed on the substrate 31 slightly (see FIG. 8. In FIG. 8, the first sealing film 33 is concealed in the second sealing film 36, but is bonded to the second sealing film. 36, similarly, the film is formed on the substrate 31 slightly, and more specifically, in the second laser processing chamber, the first sealing film 33 on the terminal portion 34 is removed according to the laser, and then the first power supply is formed. The power supply terminal portion exposed by the opening portion 35 (see FIGS. 9 and 10).
接著，移動前述玻璃基板31至前述薄膜封合室，並封合前述發光部31於第一封合膜33上之同時，將亦遮蔽前述第一供電用開口部35之側周部及底部的第二封合膜 36，進行成膜，具體來說，前述第一供電用開口部35，係由前述第一封合膜33之開口端面33a而成之側周面與，作為在前述端子部34，從前述第一封合膜33之開口部露出之上面34a而成的底部所構成，另，作為其第二封合膜36，係採用與前述第一封合膜33相同之構成者，然而，亦可另外設置：將第二封合膜36進行成膜之薄膜封合室。Then, the glass substrate 31 is moved to the film sealing chamber, and the light-emitting portion 31 is sealed on the first sealing film 33, and the side peripheral portion and the bottom portion of the first power supply opening portion 35 are also shielded. Second sealing film 36. The first power supply opening 35 is formed by the side end surface 33a of the opening end surface 33a of the first sealing film 33, and the terminal portion 34 is formed from the above. The bottom portion of the laminated film 33 is formed by the bottom portion of the upper surface 34a, and the second sealing film 36 is the same as the first sealing film 33. Provided: a film sealing chamber in which the second sealing film 36 is formed into a film.
更加地，移動前述玻璃基板31至第二雷射加工室，並根據上述雷射加工裝置，呈殘留層積在前述第一供電用開口部35之側周部的前述第二封合膜36地，除去層積於端子部34上之第二封合膜36，並形成從第一供電用開口部35及第二供電用開口部37露出之供電端子部(參照圖11)。Further, the glass substrate 31 to the second laser processing chamber are moved, and the second sealing film 36 is laminated on the side peripheral portion of the first power supply opening 35 in accordance with the laser processing apparatus. The second sealing film 36 laminated on the terminal portion 34 is removed, and a power supply terminal portion exposed from the first power supply opening portion 35 and the second power supply opening portion 37 is formed (see FIG. 11).
具體來說，係由呈不去除層積於前述第一供電用開口部35之側周上之前述第二封合膜36地，去除層積於前述第一供電用開口部35之底部上之前述第二封合膜36之一部分之情況，前述第二供電用開口部37的開口徑，則呈較由第二供電用開口部37層積於前述第一供電用開口部35之開放端側的側周部上之第二封合膜36內徑為小口徑地，形成前述第二供電用開口部37。Specifically, the second sealing film 36 which is laminated on the side of the first power supply opening 35 is removed, and is removed from the bottom of the first power supply opening 35. In the case of a part of the second sealing film 36, the opening diameter of the second power supply opening 37 is laminated on the open end side of the first power supply opening 35 by the second power supply opening 37. The second sealing film 36 on the side peripheral portion has an inner diameter of a small diameter, and the second power supply opening portion 37 is formed.
即，殘留層積於前述第一供電用開口部35之底部上之前述第二封合膜36之外周部，並只去除中央部，將前述前述第一供電用開口部35之側周部上之第二封合膜36與端子部34之接觸面積，作為盡可能地變寬。In other words, the outer peripheral portion of the second sealing film 36 is deposited on the bottom of the first power supply opening 35, and only the central portion is removed, and the side portion of the first power supply opening 35 is left. The contact area between the second sealing film 36 and the terminal portion 34 is as wide as possible.
對於如此作為而製作之有機EL元件，藉由前述供電用端子，連接安裝有機EL元件(發光部32)驅動用之驅動電路，並將組裝有控制此驅動電路之控制器或其他電子部件等之印刷基板(PCB：Printed Circuit Board)，安裝於基板31，再由安裝電纜或框體之情況，製造有機EL顯示器。In the organic EL device produced as described above, a driving circuit for driving the organic EL element (light emitting unit 32) is connected to the power supply terminal, and a controller or other electronic component for controlling the driving circuit is incorporated. A printed circuit board (PCB: Printed Circuit Board) is mounted on the substrate 31, and an organic EL display is manufactured by mounting a cable or a casing.
實施例2係因如上述作為，故於形成在基板31上之發光部32上，將封合此發光部32之第一封合膜33進行成膜，並照射雷射光於層積於發光部32之端子部34上的第一封合膜33之一部分而去除，再形成由側周部(第一封合膜33)與底部(從第一封合膜33露出之端子部34)而成之第一供電用開口部35之後，由呈亦被覆前述第一供電用開口部35之側周部及底部地，將第二封合膜36成膜於第一封合膜33上，並層積第二封合膜36於第一封合膜33上之情況，即使對於第一封合膜33與第二封合膜36，各自有缺陷，亦可相互修補，進而成為可更確實地阻止從對於發光部32之基板垂直方向的水分侵入情況。In the second embodiment, as described above, the first sealing film 33 that seals the light-emitting portion 32 is formed on the light-emitting portion 32 formed on the substrate 31, and the laser beam is irradiated onto the light-emitting portion. One of the first sealing films 33 on the terminal portion 34 of the 32 portion is removed, and the side peripheral portion (first sealing film 33) and the bottom portion (the terminal portion 34 exposed from the first sealing film 33) are formed. After the first power supply opening portion 35, the second sealing film 36 is formed on the first sealing film 33 by the side peripheral portion and the bottom portion of the first power supply opening portion 35. When the second sealing film 36 is formed on the first sealing film 33, even if the first sealing film 33 and the second sealing film 36 are defective, they can be repaired each other, and the film can be more reliably prevented. The moisture intrusion from the vertical direction of the substrate of the light-emitting portion 32.
更加地，因照射雷射光於隱蔽第一供電用開口部35之底部的第二封合膜36而除去層積在前述底部上之第二封合膜36，保持根據第二封合膜36隱蔽第一供電用開口部35之側周部之狀態，形成露出端子部34之第二供電用開口部37，故根據第二封合膜36隱蔽第一供電用開口部35之側周部之情況，亦可阻止從對於發光部32之基板平行方向之水分侵入之情況，即，可不使第一封合膜33之 側周部露出而只使端子部34露出情況，並由此，可良好地阻止從其第一封合膜33之側周部之水分的侵入情況。Further, the second sealing film 36 laminated on the bottom portion is removed by irradiating the laser light to the second sealing film 36 which conceals the bottom of the first power supply opening portion 35, and is kept concealed according to the second sealing film 36. In the state of the side peripheral portion of the first power supply opening portion 35, the second power supply opening portion 37 of the terminal portion 34 is formed, and the side portion of the first power supply opening portion 35 is concealed according to the second sealing film 36. It is also possible to prevent the intrusion of moisture from the parallel direction of the substrate of the light-emitting portion 32, that is, the first sealing film 33 may not be used. When the side peripheral portion is exposed and only the terminal portion 34 is exposed, the intrusion of moisture from the side peripheral portion of the first sealing film 33 can be satisfactorily prevented.
另外，由第二供電用開口部37的開口徑，則呈較由第二供電用開口部37層積於前述第一供電用開口部35之開放端側的側周部上之第二封合膜36內徑為小口徑地，照射前述雷射光於隱蔽前述第一供電用開口部35之底部的第二封合膜36而去除之情況，因形成前述第二供電用開口部37，故由此，可確保增加端子部34與第二封合膜36之接觸面積，進而可更使封合性提升。In addition, the opening diameter of the second power supply opening portion 37 is a second seal which is laminated on the side peripheral portion of the first power supply opening portion 35 on the open end side of the second power supply opening portion 37. The inner diameter of the film 36 is a small diameter, and the second laser film 36 is formed by illuminating the second sealing film 36 that covers the bottom of the first power supply opening 35, and the second power supply opening 37 is formed. This ensures that the contact area between the terminal portion 34 and the second sealing film 36 is increased, and the sealing property can be further improved.
另外，第一封合膜33及第二封合膜36係因未採用光罩而成膜於前述基板31之略全面，故成為無需光罩，而採用光罩時之不良情況，即，以往所需之光罩的調整機構或，預備多數光罩或，光罩之自動交換機構等，係均不需要，而成為極低成本，且亦無需定期交換洗淨光罩，故亦成為對於維護性優越之構成，另外，與光微影處理不同，因亦無需以極簡易的工程進行潤濕工程，故當然可阻止元件的劣化，而可極低成本地，將封合膜33進行成膜。In addition, since the first sealing film 33 and the second sealing film 36 are formed on the substrate 31 without using a photomask, the photoreceptor is not required, and the photomask is used as a defect. The required adjustment mechanism of the reticle or the preparation of most of the reticle or the automatic exchange mechanism of the reticle is not required, and it is extremely low cost, and it is also unnecessary to periodically exchange the cleaning reticle, so it is also for maintenance. In addition, unlike the photolithography process, since the wetting process does not need to be performed in an extremely simple process, the deterioration of the component can be prevented, and the sealing film 33 can be formed at a very low cost. .
另外，第一封合膜33及第二封合膜36係因作為各自由層積複數層之有機膜或複數層之無機膜，或者複數之有機膜或複數之無機膜而成之層積膜，故成為可更良好地阻止對於從基板垂直方向之發光部32的水分侵入情況。In addition, the first sealing film 33 and the second sealing film 36 are laminated films each of which is an organic film or a plurality of layers of an inorganic film or a plurality of organic films or a plurality of inorganic films. Therefore, it is possible to more effectively prevent moisture intrusion into the light-emitting portion 32 from the vertical direction of the substrate.
隨之，實施例2係可確實地阻止從對於發光部之基板垂直方向的水分侵入情況，係當然亦可確實地阻止從基板平行方向的水分侵入，而成為對於封合性極優越之性賴性 高之有機EL元件。In the second embodiment, the moisture intrusion from the substrate in the direction perpendicular to the substrate of the light-emitting portion can be reliably prevented, and the moisture intrusion from the parallel direction of the substrate can be surely prevented, and the sealing property is excellent. Sex High organic EL components.
本發明係不限定於實施例1，2之構成，而各構成要件之具體構成係為可適宜設計之構成。The present invention is not limited to the configurations of the first and second embodiments, and the specific configuration of each constituent element is a configuration that can be suitably designed.
5‧‧‧有機成膜室5‧‧‧Organic film forming room
6‧‧‧有機成膜室6‧‧‧Organic film forming room
11、31‧‧‧基板11, 31‧‧‧ substrate
12、32‧‧‧發光部12, 32‧‧‧Lighting Department
13、33‧‧‧第一封合部13, 33‧‧‧ first seal
14、34‧‧‧端子部14, 34‧‧‧ Terminals
15‧‧‧供電用開口部15‧‧‧Power supply opening
16‧‧‧驅動電路16‧‧‧Drive circuit
17‧‧‧端子17‧‧‧ Terminal
18、36‧‧‧第二封合部18, 36‧‧‧ Second seal
19‧‧‧連接端子19‧‧‧Connecting terminal
20‧‧‧ACF20‧‧‧ACF
21‧‧‧導電粒子21‧‧‧Electrical particles
35‧‧‧第一供電用開口部35‧‧‧First power supply opening
37‧‧‧第二供電用開口部37‧‧‧Second power supply opening
[圖1]係為以往例之封合膜形成法之概略說明圖。Fig. 1 is a schematic explanatory view showing a method of forming a sealing film of a conventional example.
[圖2]係為以往例之有機EL元件的概略說明圖。FIG. 2 is a schematic explanatory view of an organic EL device of a conventional example.
[圖3]係為實施例1之封合膜形成法之概略說明圖。Fig. 3 is a schematic explanatory view showing a method of forming a sealing film of Example 1.
[圖4]係為實施例1之端子部之擴大概略說明圖。Fig. 4 is an enlarged schematic explanatory view showing a terminal portion of the first embodiment.
[圖5]係為實施例1之端子部與驅動電路之連接部分的擴大概略說明剖面圖。Fig. 5 is an enlarged schematic cross-sectional view showing a connection portion between a terminal portion and a drive circuit of the first embodiment.
[圖6]係為表示在有機EL元件之分組方式的一例之概略構成說明圖。FIG. 6 is a schematic block diagram showing an example of a grouping method of an organic EL element.
[圖7]係為表示在有機EL元件之水平方式的一例之概略構成說明圖。FIG. 7 is a schematic block diagram showing an example of a horizontal mode of the organic EL element.
[圖8]係為將實施例2的一部分作為缺口之概略說明斜視圖。Fig. 8 is a perspective view schematically showing a part of the second embodiment as a notch.
[圖9]係為實施例2之要部的概略說明平面圖。Fig. 9 is a schematic plan view showing a main part of the second embodiment.
[圖10]係為實施例2之要部的概略說明剖面圖。Fig. 10 is a schematic cross-sectional view showing the essential part of the second embodiment.
[圖11]係為實施例2之要部的概略說明剖面圖。Fig. 11 is a schematic cross-sectional view showing the essential part of the second embodiment.
11‧‧‧基板11‧‧‧Substrate
13‧‧‧第一封合部13‧‧‧First closure
15‧‧‧供電用開口部15‧‧‧Power supply opening
16‧‧‧驅動電路16‧‧‧Drive circuit
17‧‧‧端子17‧‧‧ Terminal
18‧‧‧第二封合部18‧‧‧Second Seal
19‧‧‧連接端子19‧‧‧Connecting terminal
20‧‧‧ACF20‧‧‧ACF
21‧‧‧導電粒子21‧‧‧Electrical particles
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2005243771A JP4006456B2 (en) | 2005-08-25 | 2005-08-25 | Manufacturing method of organic EL display |
| JP2005335615A JP3936375B2 (en) | 2005-11-21 | 2005-11-21 | Manufacturing method of organic EL element |
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| Publication Number | Publication Date |
|---|---|
| TW200721890A TW200721890A (en) | 2007-06-01 |
| TWI429323B true TWI429323B (en) | 2014-03-01 |
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|---|---|---|---|
| TW095131019A TWI429323B (en) | 2005-08-25 | 2006-08-23 | Organic electroluminescent element |
Country Status (3)
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| KR (1) | KR101234948B1 (en) |
| TW (1) | TWI429323B (en) |
| WO (1) | WO2007023789A1 (en) |
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| US20100294526A1 (en) * | 2009-05-21 | 2010-11-25 | General Electric Company | Hermetic electrical package |
| US8427845B2 (en) | 2009-05-21 | 2013-04-23 | General Electric Company | Electrical connectors for optoelectronic device packaging |
| CN112820839B (en) * | 2021-01-07 | 2022-08-23 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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| JP3197305B2 (en) * | 1991-10-08 | 2001-08-13 | ティーディーケイ株式会社 | Protection of electroluminescent element |
| JP2003272834A (en) * | 2002-03-20 | 2003-09-26 | Denso Corp | Display device |
| JP2003323974A (en) * | 2002-04-30 | 2003-11-14 | Casio Comput Co Ltd | El panel and its manufacturing method |
| JP4364551B2 (en) * | 2002-05-15 | 2009-11-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| JP2004165068A (en) * | 2002-11-14 | 2004-06-10 | Sanyo Electric Co Ltd | Manufacturing method of organic electroluminescent panel |
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| JP3921482B2 (en) * | 2004-07-28 | 2007-05-30 | トッキ株式会社 | Organic EL device manufacturing apparatus and organic EL device |
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| KR101234948B1 (en) | 2013-02-19 |
| WO2007023789A1 (en) | 2007-03-01 |
| TW200721890A (en) | 2007-06-01 |
| KR20080037024A (en) | 2008-04-29 |
| WO2007023789A8 (en) | 2009-08-27 |
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