JP4252317B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a manufacturing apparatus provided with a film forming apparatus used for film formation of a material that can be formed by vapor deposition (hereinafter referred to as vapor deposition material), and a light emitting apparatus that uses a layer containing an organic compound using the manufacturing apparatus as a light emitting layer. And a manufacturing method thereof. In particular, the present invention relates to a film manufacturing method (vapor deposition method) and a manufacturing apparatus for forming a film by evaporating a vapor deposition material from a plurality of vapor deposition sources provided facing a substrate. The present invention also relates to a method for cleaning a film forming apparatus and a method for reusing a deposition material.
[0002]
[Prior art]
In recent years, research on a light-emitting device having an EL element as a self-luminous light-emitting element has been activated. This light emitting device is also called an organic EL display or an organic light emitting diode. These light-emitting devices have features such as fast response speed, low voltage, and low power consumption driving suitable for moving image display, so next-generation displays such as new-generation mobile phones and personal digital assistants (PDAs) It is attracting a lot of attention.
[0003]
An EL element using a layer containing an organic compound as a light-emitting layer has a structure in which a layer containing an organic compound (hereinafter referred to as an EL layer) is sandwiched between an anode and a cathode. As a result, luminescence (Electro Luminescence) is emitted from the EL layer. Light emission from the EL element includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state.
[0004]
The EL layer has a laminated structure represented by “hole transport layer / light emitting layer / electron transport layer”. In addition, EL materials for forming an EL layer are roughly classified into a low molecular (monomer) material and a high molecular (polymer) material, and the low molecular material is formed using an evaporation apparatus.
[0005]
A conventional vapor deposition apparatus has a substrate mounted on a substrate holder, and has an EL material, that is, a crucible enclosing the vapor deposition material, a shutter for preventing the EL material to be sublimated from rising, and a heater for heating the EL material in the crucible. ing. Then, the EL material heated by the heater is sublimated and deposited on the rotating substrate. At this time, in order to form a film uniformly, the distance between the substrate and the crucible needs to be 1 m or more.
[0006]
In the conventional vapor deposition apparatus and vapor deposition method, when an EL layer is formed by vapor deposition, most of the sublimated EL material is the inner wall of the deposition chamber of the deposition apparatus, the shutter or the deposition shield (the deposition material adheres to the inner wall of the deposition chamber). It has adhered to the protective plate to prevent it. Therefore, when the EL layer is formed, the utilization efficiency of the expensive EL material is extremely low, about 1% or less, and the manufacturing cost of the light emitting device is very expensive.
[0007]
Further, in order to obtain a uniform film, the conventional vapor deposition apparatus has to have a distance of 1 m or more between the substrate and the vapor deposition source. Therefore, the vapor deposition apparatus itself is increased in size, and the time required for evacuating each film formation chamber of the vapor deposition apparatus becomes longer, so that the film formation rate is reduced and the throughput is reduced. Further, when a large-area substrate is used, there is a problem that the film thickness tends to be non-uniform at the center and the peripheral portion of the substrate. Furthermore, since the vapor deposition apparatus has a structure in which the substrate is rotated, there is a limit to the vapor deposition apparatus intended for a large area substrate.
[0008]
From these points, the present applicant has proposed a vapor deposition apparatus (Patent Document 1, Patent Document 2).
[0009]
[Patent Document 1]
JP 2001-247959 A
[Patent Document 2]
JP 2002-60926 A
[0010]
[Problems to be solved by the invention]
The present invention provides a vapor deposition apparatus and a vapor deposition method which are one of the production apparatuses that reduce the manufacturing cost by increasing the utilization efficiency of the EL material and have excellent uniformity and throughput of the EL layer film formation. is there. Moreover, the light-emitting device produced by the vapor deposition apparatus and vapor deposition method of this invention, and its production method are provided.
[0011]
The present invention is also applicable to a large area substrate having a substrate size of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm, for example. Thus, the present invention provides a manufacturing apparatus for efficiently depositing an EL material. In addition, the present invention provides a vapor deposition apparatus that can obtain a uniform film thickness over the entire surface of a large-area substrate.
[0012]
Further, the biggest problem in practical use of EL elements is that the lifetime of the elements is insufficient. In addition, the deterioration of the element appears in the form of light emission for a long time and a non-light emitting region (dark spot) is widened. The cause is deterioration of the EL layer.
[0013]
The EL material forming the EL layer is easily deteriorated by impurities such as oxygen and water.
In addition, it is conceivable that other impurities are included in the EL material to affect the deterioration of the EL layer.
[0014]
Another object of the present invention is to provide a consistent closed system capable of avoiding contamination.
[0015]
[Means for Solving the Problems]
The present invention provides vapor deposition source Cleaning the parts of the holder, typically a film thickness monitor, shutter, etc., reduces the frequency of replacement and avoids contamination of the film formation chamber. The cleaning is performed in an installation chamber connected to the film formation chamber, so that the inside of the film formation chamber is always kept in a vacuum and contamination of impurities is avoided. The present invention provides vapor deposition source The cleanliness of the film formation chamber is maintained by moving the holder to the installation chamber and performing cleaning in the installation chamber.
[0016]
Note that the film formation chamber may be cleaned by plasma cleaning or the like that can be performed without opening to the atmosphere.
[0017]
Also, after evaporation source The holder may be moved to the installation room, and the vapor deposition material adhering to the shutter or the like may be collected and reused.
[0018]
In addition, the present invention provides vapor deposition source When exchanging various parts of the holder, the film forming chamber is kept clean by performing it in the installation chamber.
[0019]
Conventionally, vapor deposition source Vapor deposition because the holder was fixed in the deposition chamber source Cleaning and maintenance of the holder and its components were performed with the film formation chamber open to the atmosphere. In particular, conventionally, the film thickness monitor is replaced with a new one during maintenance, and the old one is discarded without being cleaned.
[0020]
The structure related to the method for reusing the film thickness meter disclosed in the present specification is a method for reusing the film thickness meter by removing an organic compound adhering to the film thickness meter provided in the vapor deposition source after the vapor deposition. A recycling method characterized in that after the source is moved from the film formation chamber to the installation chamber, the organic compound adhering to the film thickness meter is removed and cleaned in the installation chamber, and the film thickness meter is repeatedly used. is there.
[0021]
In addition, a container (typically a crucible) containing a deposition material is deposited. source The setting work for the holder is also performed in the installation room. The present invention does not use a conventional container, typically a brown glass bottle, as a container for storing the EL material, but directly stores the EL material in a container to be installed in the vapor deposition apparatus, and performs vapor deposition after transportation. . The present invention makes it possible to cope with further ultra-high purity of EL materials in the future.
[0022]
Usually, the container for storing the EL material is placed in a brown glass bottle and closed with a plastic lid (cap). A predetermined amount of evaporating material put in a container (glass bottle) is taken out and transferred to a container (typically a crucible or a vapor deposition boat) installed at a position facing the film formation in the vapor deposition apparatus. In this transfer operation, impurities may be mixed. That is, there is a possibility that oxygen, water, and other impurities, which are one cause of deterioration of the EL element, are mixed. In addition, no matter how high-purity EL material is provided by the material manufacturer, there is a risk of impurity contamination as long as there is a conventional transfer work at the light-emitting device manufacturer, and the purity of the EL material cannot be maintained, There was a limit in purity.
[0023]
The configuration of the invention disclosed in this specification includes a load chamber, a transfer chamber connected to the load chamber, a plurality of film formation chambers connected to the transfer chamber, and the component as shown in FIG. A film forming apparatus having an installation chamber connected to a film chamber, wherein the film forming chamber includes means for fixing a substrate, a vapor deposition source, and means for moving the vapor deposition source. In the manufacturing apparatus, the vapor deposition source is moved from the film formation chamber or from the film formation chamber to the installation chamber by means of moving the source.
[0024]
In the above-described configuration, the installation chamber is connected to an evacuation processing chamber that evacuates the installation chamber, and the installation chamber takes out a container containing a deposition material from a container for transportation whose inside is sealed with a vacuum. And means for mounting the container containing the vapor deposition material on the vapor deposition source in the installation chamber.
[0025]
Further, in the above configuration, in the installation chamber, an operation of taking out a container in which the vapor deposition material is stored from a transport container whose inside is sealed in a vacuum, and an operation in which the container in which the vapor deposition material is stored is mounted on the vapor deposition source. Is performed by an automatic robot under vacuum.
[0026]
In addition, as shown in FIG. 1, the configuration of another invention includes a load chamber, a transfer chamber connected to the load chamber, a plurality of film formation chambers connected to the transfer chamber, and the film formation chamber. And a transfer chamber having a function of aligning a mask and a substrate, and the plurality of film formation chambers evacuate the film formation chamber. An alignment unit that is connected to the vacuum evacuation chamber and aligns the mask and the substrate, a vapor deposition source, and a unit that heats the vapor deposition source, and at least two of the plurality of film deposition chambers are formed. In the chamber, a plurality of different panels are manufactured by performing vapor deposition on the substrate surfaces carried into the respective film formation chambers in parallel.
[0027]
1 includes a load chamber, a transfer chamber connected to the load chamber, a plurality of film forming chambers connected to the transfer chamber, and an installation chamber connected to the film forming chamber. In the film forming apparatus, the transfer chamber has a function of aligning a mask and a substrate, and the plurality of film forming chambers are connected to a vacuum exhaust processing chamber for evacuating the film forming chamber, And alignment means for aligning the substrate, a vapor deposition source, and a means for heating the vapor deposition source, and at least two of the plurality of film deposition chambers are parallel to each other. It can also be set as the manufacturing apparatus characterized by vapor-depositing on the substrate surface carried in into the chamber, and producing the same panel in multiple numbers.
[0028]
Further, in the above structure, the film formation chamber and the installation chamber are connected to an evacuation processing chamber for evacuating the chamber, and have means capable of introducing a material gas or a cleaning gas. It is said.
[0029]
According to another aspect of the invention, there is provided a load chamber, a transfer chamber connected to the load chamber, a plurality of film forming chambers connected to the transfer chamber, and an installation chamber connected to the film forming chamber. In the film forming chamber, a means for fixing the substrate, a vapor deposition source, a means for moving the vapor deposition source, a shutter provided in the vapor deposition source, and a vapor deposition source are provided in the film deposition chamber. A film thickness meter, and the film formation chamber and the installation chamber are connected to an evacuation treatment chamber for evacuating the chamber, and have means for introducing a material gas or a cleaning gas. Is a manufacturing apparatus characterized by
[0030]
In each of the above structures, the means for introducing the material gas is a means for introducing the material gas radicalized by the plasma generating means. In addition to the system for introducing the material gas, a system for introducing an inert gas for bringing the inside of the film formation chamber to a normal pressure may be provided.
[0031]
Alternatively, plasma may be formed by performing an antenna-type discharge in the deposition chamber during vapor deposition, and the components of the ionized material gas may be chemically attached to the evaporated organic compound.
[0032]
In each configuration of the above manufacturing apparatus, the vacuum evacuation means provided in connection with the film forming chamber evacuates from atmospheric pressure to about 1 Pa with an oil-free dry pump, and a pressure higher than that is a magnetic levitation type turbo. Vacuum evacuation by molecular pump or complex molecular pump. A cryopump may be provided in the film formation chamber in order to remove moisture. In this way, contamination by organic substances such as oil is mainly prevented from the exhaust means. The inner wall surface is mirror-finished by electropolishing to reduce the surface area and prevent outgassing.
[0033]
In each of the above configurations, the material gas is monosilane, disilane, trisilane, SiF. ₄ , GeH ₄ , GeF ₄ , SnH ₄ , CH ₄ , C ₂ H ₂ , C ₂ H ₄ Or C ₆ H ₆ It is characterized by being one kind or plural kinds selected from.
[0034]
Further, phosphine gas may be introduced in addition to monosilane. In place of monosilane, AsH ₃ , B ₂ H ₂ , BF ₄ , H ₂ Te, Cd (CH ₃ ) ₂ , Zn (CH ₃ ) ₂ , (CH ₃ ) ₃ In, H ₂ Se, BeH ₂ Various gases represented by trimethylgallium or triethylgallium can be used.
[0035]
In each configuration of the film forming apparatus, the vapor deposition source can be moved in the X direction or the Y direction in the film forming chamber while keeping the level during the vapor deposition. It can also be moved in the Z direction. In the vapor deposition, the distance d between the substrate and the vapor deposition source holder is typically 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm, and the utilization efficiency and throughput of the vapor deposition material are remarkably improved. be able to. The vapor deposition source holder includes a container (typically a crucible), a heater disposed on the outside of the container via a heat equalizing member, a heat insulating layer provided on the outside of the heater, and an outer cylinder housing these And a cooling pipe pivoted to the outside of the outer cylinder, a vapor deposition shutter that opens and closes the opening of the outer cylinder including the opening of the crucible, and a film thickness sensor.
[0036]
In this specification, the crucible is a cylindrical container having a relatively large opening formed of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite. It can withstand high temperature, high pressure and reduced pressure.
[0037]
Further, the film formation chamber has a shutter that partitions the film formation chamber and shields vapor deposition on the substrate. A shutter that moves with the vapor deposition source is provided so as to cover the mouth of the container (crucible), but the shutter is always provided with a hole for controlling the vapor deposition rate, and can be measured with a film thickness monitor. .
Even when no hole is provided, the crucible and the shutter are spaced from each other so that the vapor deposition material may be deposited from the space or the hole and reach the substrate. In order to prevent this unintended deposition on the substrate, the film forming chamber is divided and a shutter for shielding the deposition on the substrate is provided.
[0038]
The present invention also provides a cleaning method. The cleaning method disclosed in this specification is a cleaning method for removing an organic compound adhering to a shutter provided in a vapor deposition source or a film thickness meter, after the vapor deposition source is moved from a film formation chamber to an installation chamber. A cleaning method is characterized in that plasma is generated in the installation chamber, or a gas ionized by the plasma is introduced into the installation chamber for cleaning, and exhausted by a vacuum exhaust means.
[0039]
In the above configuration, the plasma is Ar, N ₂ , H ₂ , F ₂ , NF ₃ Or O ₂ One or a plurality of gases selected from the above are excited and generated.
[0040]
The present invention also provides a recycling method for recovering an organic compound. The recycling method disclosed in this specification is a recycling method for recovering an organic compound attached to a shutter provided in a deposition source after deposition, as shown in FIG. In the recycling method, the deposition source is moved from the deposition chamber to the installation chamber, and then the attached organic compound is melted or sublimated by heating the shutter in the installation chamber and collected in a container.
[0041]
Further, the configuration relating to another reuse method is a reuse method for recovering an organic compound adhering to a shutter provided in a vapor deposition source after vapor deposition, as shown in FIG. It is the same as the container installed in the vapor deposition source, and after moving the vapor deposition source from the film formation chamber to the installation chamber, the shutter is set as a container installed in the vapor deposition source in the installation chamber, and vapor deposition is performed again. It is a reuse method.
[0042]
Further, as a layer containing an organic compound disposed between the cathode and the anode, a typical example is a lamination of three layers of a hole transport layer, a light emitting layer, and an electron transport layer, but there is no particular limitation. A hole injection layer / hole transport layer / light emitting layer / electron transport layer, or a hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer in this order, A single layer structure may be used. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. Further, examples of the light emitting layer include a light emitting layer having a hole transporting property and a light emitting layer having an electron transporting property. All of these layers may be formed using a low molecular weight material, and one or several of them may be formed using a high molecular weight material. Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as a layer containing an organic compound (EL layer). Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer. The layer containing an organic compound (EL layer) may also contain an inorganic material such as silicon.
[0043]
In this specification, an EL element refers to an EL material and a layer containing an organic material or an inorganic material for injecting carriers into the EL material (hereinafter referred to as an EL layer) between two electrodes (an anode and a cathode). A light-emitting element having a structure, and a diode composed of an anode, a cathode and an EL layer. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, which are produced according to the present invention. The light emitting device can be applied to either light emission.
[0044]
In the light emitting device of the present invention, the screen display driving method is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the light-emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.
[0045]
In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element. For this purpose, an EL layer is provided between two types of stripe-shaped electrodes provided so as to be orthogonal to each other. There are two types, a formation method (simple matrix method) and a method (active matrix method) in which an EL layer is formed between a pixel electrode connected to a TFT and arranged in a matrix and a counter electrode.
[0046]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0047]
(Embodiment 1)
FIG. 2 shows a top view of the vapor deposition apparatus of the present invention.
[0048]
In FIG. 2, a film forming chamber 101 includes a substrate holding means (not shown), a vapor deposition source holder 104 provided with a vapor deposition shutter (not shown), means for moving the vapor deposition source holder (not shown), and a reduced pressure atmosphere. Means (vacuum evacuation means).
This film forming chamber 101 has a vacuum degree of 5 × 10 5 by means of a reduced pressure atmosphere. ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 It is evacuated to Pa.
[0049]
The film formation chamber has a gas introduction system (not shown) for introducing a material gas at the time of vapor deposition and an inert gas (Ar, N) that brings the film formation chamber to normal pressure. ₂ Etc.) are connected to an introduction system (not shown). Further cleaning gas (H ₂ , F ₂ , NF ₃ Or O ₂ One or a plurality of gases selected from the above may be provided. It is desirable to prevent the material gas from flowing to the gas outlet at the shortest distance from the gas inlet.
[0050]
In addition, a material gas is intentionally introduced at the time of film formation, and the component of the material gas is included in the organic compound film to form a high-density film. Impurities such as oxygen and moisture that cause deterioration enter and diffuse into the film. You may block it. Specific examples of the material gas include silane-based gases (monosilane, disilane, trisilane, etc.), SiF ₄ , GeH ₄ , GeF ₄ , SnH ₄ Or hydrocarbon gas (CH ₄ , C ₂ H ₂ , C ₂ H ₄ , C ₆ H ₆ Or the like may be used. Note that a mixed gas obtained by diluting these gases with hydrogen or argon is also included. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, since residual gas (oxygen, moisture, other impurities, etc.) contained in the gas can be removed in advance, introduction of these impurities into the apparatus can be prevented.
[0051]
For example, when a monosilane gas is introduced at the time of vapor deposition, Si is contained in the film, and after completing a light-emitting element, when there is a defective portion such as a pinhole or a short circuit, the defective portion generates heat, and thus Si is By reacting, insulating insulators such as SiOx and SiCx are formed, leakage at pinholes and short portions is reduced, and a self-healing effect that dots (such as dark spots) do not progress is also obtained.
[0052]
In addition, when introducing the said material gas, it is preferable to add a turbo-molecular pump and a dry pump in addition to a cryopump.
[0053]
In the film formation chamber 101, the vapor deposition source holder 104 can move a plurality of times along the movement path indicated by the chain line in FIG. Note that the movement route shown in FIG. 2 is an example and is not particularly limited. In order to make the film thickness uniform, it is preferable to carry out vapor deposition by moving the vapor deposition source holder while shifting the movement path as shown in FIG. Further, the same movement route may be reciprocated. Also vapor deposition source The moving speed of the holder may be changed as appropriate for each section of the moving path to achieve a uniform film thickness and to shorten the time required for the film formation.
[0054]
The vapor deposition source holder 104 is provided with a container (crucible 106) in which a vapor deposition material is sealed and a film thickness monitor 105. Here, an example in which four crucibles and four film thickness monitors are installed in one vapor deposition source holder 104 is shown.
[0055]
The film thickness monitor 105 can be used for vapor deposition while measuring the film thickness of the vapor deposition film. When the film thickness of the deposited film is measured using the film thickness monitor 105, for example, a crystal resonator, a change in mass of the film deposited on the crystal resonator can be measured as a change in resonance frequency.
[0056]
The film thickness monitor 105 can be replaced or cleaned by vapor deposition. source This is performed after the holder 104 is moved to the installation chamber 103b. In the installation chamber 103b, deposits deposited on a shutter (not shown) may be collected. In the installation chamber 103b, the vapor deposition material is sublimated (vaporized) in advance by resistance heating, and when the vapor deposition rate is stabilized, the shutter 114 is opened and the vapor deposition source holder 104 is moved into the film formation chamber 101 to deposit the vapor on the substrate 100. You may go. By preheating in the installation chamber 103b, the total time required for film formation can be shortened.
[0057]
Also, in FIG. source The holder 104 can stand by in the installation chamber 103b, and can be sequentially moved to stack a plurality of types of films. Multiple vapor deposition source By using the holder 104, it is possible to continuously perform laminated film formation.
[0058]
Also vapor deposition source The crucible 106 is also installed in the holder 104 in the installation chamber 103b. FIGS. 5A and 5B show the state of conveyance. In addition, the same code | symbol is used for the part corresponding to FIG. The crucible 106 is carried into the container composed of the upper part 721a and the lower part 721b from the door 111 of the installation chamber 103a while being sealed in a vacuum. First, the loaded container is placed on the container installation turntable 109, and the fastener 702 is removed. (FIG. 5A) Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed under atmospheric pressure. Next, the inside of the installation chamber 103a is evacuated so that the container lid (upper part 721a) can be removed.
[0059]
The form of the container to be conveyed will be specifically described with reference to FIG. The second container that is divided into an upper part (721a) and a lower part (721b) used for transportation includes a fixing means 706 for fixing the first container (crucible) provided on the upper part of the second container, and a fixing means. A spring 705 for pressurizing, a gas inlet 708 serving as a gas path for holding the second container provided under the second container under reduced pressure, and an O-ring for fixing the upper container 721a and the lower container 721b And a fastener 702. In the second container, a first container 106 in which a purified vapor deposition material is enclosed is installed. Note that the second container is preferably formed using a material containing stainless steel, and the first container 106 is preferably formed using a material containing titanium.
[0060]
In the material manufacturer, the purified deposition material is sealed in the first container 106. Then, the second upper portion 721a and the lower portion 721b are aligned via the O-ring 707, the upper container 721a and the lower container 721b are fixed by the fastener 702, and the first container 106 is sealed in the second container. . Thereafter, the inside of the second container is depressurized via the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 106 is fixed by the fixing means 706. In addition, you may install a desiccant in a 2nd container. When the inside of the second container is maintained in a vacuum, reduced pressure, or nitrogen atmosphere as described above, even slight oxygen or water adhering to the vapor deposition material can be prevented.
[0061]
Next, the lid of the container is lifted by the lid transport robot 108 and moved to the lid installation base 107. Note that the transport mechanism of the present invention is not limited to a configuration in which the first container 106 is sandwiched and transported from above the first container 106 as shown in FIG. 5B. Alternatively, the first container may be transported with the side surface sandwiched therebetween.
[0062]
Next, after rotating the container installation turntable 109, only the crucible is lifted by the crucible transfer robot 110 while leaving the lower part of the container on the stand. (FIG. 5B) Finally, vapor deposition waiting in the installation chamber 103b source Set the crucible in the holder.
[0063]
Here, the installation chambers 103a and 103b are partitioned by the shutter 113, but may be omitted. Note that the installation chambers 103a and 103b can be evacuated independently.
[0064]
In the vapor deposition apparatus shown in FIG. 2, during vapor deposition, the distance between the substrate 100 and the vapor deposition source holder 104 is typically 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm. The utilization efficiency and throughput of the system are greatly improved.
[0065]
In the film formation chamber 101, a substrate 100 carried from the transfer chamber 102 through the shutter 115 and a vapor deposition mask (not shown) are installed. Note that the alignment of the vapor deposition mask and the substrate may be confirmed using a CCD camera (not shown). An alignment marker may be provided on each of the substrate and the vapor deposition mask, and position control may be performed.
[0066]
In addition, FIG. 3A shows a schematic cross-sectional view in which the vicinity of the substrate is enlarged during vapor deposition. In FIG. 3, the same reference numerals are used for the same portions as in FIG. In FIG. 3A, vapor deposition provided with two containers (crucibles) 106. source The holder 104 is shown. The container 106 is provided with a film thickness monitor 105 as appropriate. The tilt adjusting screw is appropriately provided in the same manner as the film thickness monitor, and can be tilted with respect to the substrate 100 together with the heater 203. Note that a chain line in FIG. 3A indicates a deposition center. Here, a heater 203 is used as a heating means, and vapor deposition is performed by a resistance heating method. Two containers (crucibles) 106 are simultaneously heated to evaporate from the two container openings toward one point of the substrate. Furthermore, if vapor deposition is performed using three or more containers, a desired film thickness can be obtained in a shorter time. In addition, it is possible to perform co-evaporation using two containers (crucibles) containing different vapor deposition materials, and if vapor deposition is performed using three or more containers, the number of containers installed in the vapor deposition source Films containing the same number can be obtained.
[0067]
FIG. 3B is a schematic cross-sectional view in which the vicinity of the substrate is enlarged before vapor deposition. As shown in FIG. 3B, the substrate is shielded by the shutter 201, and the crucible is shielded by the shutter 204. The shutter 204 is provided with a hole so that even when the shutter is closed, vapor deposition is performed on the film thickness monitor so that the vapor deposition rate can be continuously measured and controlled.
[0068]
Also, after deposition source A cross-sectional view of the holder is shown in FIG. In FIG. 4, the same reference numerals are used for the same portions as in FIG. After the deposition, the deposit 205 is fixed to the shutter 204. FIG. 4B shows how the deposit 205 deposited on the shutter 204 is collected. In order to recover, the shutter 204 is heated by irradiation of light from the heating lamp 206. The deposit 205 is melted or evaporated when heated to a certain temperature or higher. The recovered material can be reused (reused) for vapor deposition. This recovery operation is preferably performed in a place other than the film formation chamber, for example, in the installation chamber, and cleaning of the shutter 204 and vapor deposition irradiated with a lamp are performed. source Also serves to clean the holder parts.
[0069]
In addition, cleaning gas (H ₂ , F ₂ , NF ₃ Or O ₂ One or more gases selected from the above are provided, and vapor deposition is performed using a cleaning gas. source Parts such as the holder and shutter 204 may be cleaned. Also, plasma generating means is provided in the installation chamber to generate plasma, or a gas ionized by the plasma is introduced into the installation chamber to deposit the inner wall of the installation chamber. source Parts such as the holder and the shutter 204 may be cleaned and evacuated by vacuum evacuation means.
The plasma for cleaning is Ar, N ₂ , H ₂ , F ₂ , NF ₃ Or O ₂ One or a plurality of gases selected from the above may be excited and generated.
[0070]
Thus, vapor deposition source The cleanliness of the film formation chamber can be maintained by moving the holder to the installation chamber and performing cleaning in the installation chamber.
[0071]
(Embodiment 2)
FIG. 1 shows a top view of a multi-chamber manufacturing apparatus. The manufacturing apparatus shown in FIG. 1 has a chamber arrangement for improving tasks.
[0072]
Although the deposition time can be shortened by the vapor deposition apparatus shown in the first embodiment, the deposition time is longer than that of other apparatuses, for example, a sputtering apparatus which completes the film formation process in several minutes.
[0073]
When a layer containing an organic compound is stacked by a vapor deposition apparatus, it takes time compared to other apparatuses. Therefore, in FIG. 1, a plurality of vapor deposition apparatuses are arranged. In addition, since heat treatment (including vacuum heating) also takes time, a plurality of heating chambers are arranged. By adopting the chamber arrangement shown in FIG. 1, the tasks can be matched and the panel can be efficiently manufactured.
[0074]
In the vapor deposition apparatus using the resistance heating method, the work required for each film formation is vapor deposition. source Vapor deposition material storage work in containers (crucibles, vapor deposition boats, etc.) to be set in the holder, substrate loading work into the film formation chamber, vacuum evacuation work in the film formation chamber, and reserve of the container (crucible) performed until the vapor deposition rate is stabilized There are a heating operation, a film forming operation, a cooling operation for a container (crucible) after film formation, a nitrogen filling operation in the film forming chamber, a substrate carrying out operation from the film forming chamber, and the like.
[0075]
In the manufacturing apparatus shown in FIG. 1, at least the transfer chambers 504a and 504b are always kept in vacuum, and the film formation chambers 506R, 506G, 506B, 506R ′, 506G ′, and 506B ′ are always kept in vacuum. Therefore, the vacuum evacuation operation in the film formation chamber and the nitrogen filling operation in the film formation chamber can be omitted, and the film formation process can be performed continuously. Note that the deposition chambers 506R, 506G, 506B, 506R ′, 506G ′, and 506B ′ use the deposition apparatus described in Embodiment 1 to store the deposition material and perform deposition. source The holder parts are exchanged in the installation chambers 526R, 526G, 526B, 526R ′, 526G ′, and 526B ′.
[0076]
In one film formation chamber, a light emitting layer (including a hole transport layer, a hole injection layer, an electron transport layer, an electron injection layer, and the like) formed by stacking different material layers is formed. For example, in the case of forming a full-color light-emitting element, a vapor deposition mask for R is used in the deposition chamber 506R, and a hole transport layer or a hole injection layer, a light-emitting layer (R), an electron transport layer or an electron injection layer are sequentially stacked. Then, using a deposition mask for G in the film formation chamber 506G, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked, and the film for the B is formed in the film formation chamber 506B. And then depositing a hole transport layer or hole injection layer, a light emitting layer (B), an electron transport layer or an electron injection layer in this order, and then forming a cathode in the film formation chamber 510a or the film formation chamber 510b. A full-color light emitting element can be obtained. In the case of forming a full-color light emitting element, the basic opening pattern is the same although the opening position of the vapor deposition mask differs for each emission color.
[0077]
In addition, panels having different light emitting region patterns are used by using completely different masks for the production line stacked in the film formation chambers 506R, 506G, and 506B and the production line stacked in the film formation chambers 506R ′, 506G ′, and 506B ′. It can also be produced at the same time.
[0078]
It is also possible to perform maintenance on the production line laminated with the film formation chambers 506R ′, 506G ′, and 506B ′ while operating the production line laminated with the film formation chambers 506R, 506G, and 506B.
[0079]
Here, an example in which a film forming chamber 506R for R, a film forming chamber 506G for G, and a film forming chamber 506B for B are provided and a full color panel is manufactured is shown. It is also possible to produce. In the case where the manufacturing apparatus shown in FIG. 1 is used for manufacturing a white light emitting device, six same chambers can be installed, and more substrates can be processed.
[0080]
Hereinafter, a procedure for manufacturing a light-emitting device by loading a substrate provided with an anode (first electrode) and an insulator (partition wall) covering an end of the anode in advance into the manufacturing apparatus shown in FIG. 1 will be described.
Note that in the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (current control TFTs) and other thin film transistors (such as switching TFTs) connected to an anode are provided in advance on a substrate, and are formed of thin film transistors. A drive circuit is also provided. Further, in the case of manufacturing a simple matrix light-emitting device, the manufacturing apparatus illustrated in FIG. 1 can be used.
[0081]
First, the substrate is set in the substrate loading chamber 520. Substrate sizes of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, and even 1150 mm × 1300 mm can be handled.
[0082]
The substrate set in the substrate loading chamber 520 (a substrate provided with an anode and an insulator covering the end of the anode) is transferred to the transfer chamber 518. Note that the transfer chamber 518 is provided with a transfer mechanism (such as a transfer robot) for transferring or inverting the substrate and a vacuum exhaust unit, and the other transfer chambers 504a, 504b, 508, 514, and 502 are also transferred in the same manner. A mechanism and evacuation means are provided. The robot provided in the transfer chamber 518 can invert the front and back of the substrate, and can carry it over to the delivery chamber 505. Further, the transfer chamber 518 can maintain atmospheric pressure or vacuum. The transfer chamber 518 and the delivery chamber 505 are connected to an evacuation treatment chamber, and can be evacuated to a vacuum, or after evacuation, an inert gas can be introduced to an atmospheric pressure.
[0083]
The vacuum evacuation chamber is provided with a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to each chamber is set to 10 ^-5 -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0084]
In addition, before setting in the substrate loading chamber 520, a porous sponge (typically, a surfactant (weak alkali) is included in the surface of the first electrode (anode) in order to reduce point defects. It is preferable to remove dust on the surface by washing with PVA (polyvinyl alcohol), nylon or the like. As a cleaning mechanism, a cleaning device having a roll brush (manufactured by PVA) that rotates around an axis parallel to the surface of the substrate and contacts the surface of the substrate may be used, or may rotate around an axis perpendicular to the surface of the substrate. You may use the washing | cleaning apparatus which has a disk brush (product made from PVA) which contacts the surface of a board | substrate while moving.
[0085]
Next, the substrate is transferred from the transfer chamber 518 to the delivery chamber 505, and further, the substrate is transferred from the transfer chamber 505 to the transfer chamber 502 without being exposed to the atmosphere.
[0086]
In order to eliminate shrinkage, it is preferable to perform vacuum heating immediately before the deposition of the film containing an organic compound. The substrate is transferred from the transfer chamber 502 to the multistage vacuum heating chambers 521a and 521b, and moisture contained in the substrate and In order to thoroughly remove the gas, annealing for deaeration is performed in vacuum (5 × 10 × ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 Pa). Here, in order to efficiently perform vacuum heating, two multistage vacuum heating chambers 521a and 521b are provided. In the multistage vacuum heating chambers 521a and 521b, a flat plate heater (typically a sheath heater) is used to uniformly heat a plurality of substrates. A plurality of the flat plate heaters are installed, and can be heated from both sides so that the substrate is sandwiched by the flat plate heaters. In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, depending on the organic resin material, moisture may be easily adsorbed and degassing may occur. Therefore, before forming a layer containing an organic compound, It is effective to perform vacuum heating for removing adsorbed moisture by performing natural cooling for 30 minutes after heating for 100 minutes to 100 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more.
[0087]
Further, if necessary, a hole injection layer made of a polymer material may be formed in the film formation chambers 512a and 512b by an inkjet method, a spin coating method, a spray method, or the like under atmospheric pressure or reduced pressure. Further, after coating by the ink jet method, the film thickness may be made uniform by a spin coater. Similarly, after coating by a spray method, the film thickness may be uniformed by a spin coater. Alternatively, the film may be formed by an inkjet method in a vacuum with the substrate placed vertically.
[0088]
For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) in the film formation chambers 512a and 512b. ), Polyaniline / camphorsulfonic acid aqueous solution (PANI / CSA), PTPDES, Et-PTPDK, PPBA, or the like may be applied to the entire surface and fired. When baking, it is preferable to perform in baking chambers 523a and 523b. Here, two film formation chambers 512a and 512b and two bake chambers 523a and 523b are provided for efficient film formation.
[0089]
When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, flatness is improved, and coverage and film thickness uniformity of a film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately after forming the hole injection layer by a coating method and immediately before film formation by the vapor deposition method. What is necessary is just to carry to the multistage vacuum heating chamber 521a, 521b, when heating in a vacuum.
[0090]
For example, after the surface of the first electrode (anode) is cleaned with a sponge, it is carried into the substrate loading chamber 520, conveyed to the film formation chamber 512a, and poly (ethylenedioxythiophene) / poly (styrenesulfone) by spin coating. Acid) Aqueous solution (PEDOT / PSS) is applied to the entire surface with a film thickness of 60 nm, then transferred to a baking chamber 523a, pre-baked at 80 ° C. for 10 minutes, main-baked at 200 ° C. for 1 hour, and further a multistage vacuum heating chamber After being transported to 521a and vacuum heated immediately before deposition (170 ° C., heating for 30 minutes, cooling for 30 minutes), transported to the film formation chambers 506R, 506G, and 506B to form a light emitting layer by vapor deposition without touching the atmosphere. Just do it. In particular, when an ITO film is used as an anode material and there are irregularities and fine particles on the surface, these effects can be reduced by setting the PEDOT / PSS film thickness to 30 nm or more.
[0091]
In addition, when PEDOT / PSS is formed by spin coating, the film is formed on the entire surface, so that the end surface, peripheral edge, terminal portion, connection region between the cathode and the lower wiring, and the like can be selectively removed. Preferably, using a mask in the pretreatment chamber 503, O ₂ It is preferable to remove selectively by ashing or the like. The pretreatment chamber 503 has plasma generating means, and performs dry etching by exciting one or more kinds of gases selected from Ar, H, F, and O to generate plasma. By using the mask, only unnecessary portions can be selectively removed. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 503 so that ultraviolet irradiation can be performed as the anode surface treatment.
[0092]
Note that the vapor deposition mask is stocked in the mask stock chamber 524 and is appropriately transported to the film formation chamber when vapor deposition is performed. The deposition mask may be cleaned in the mask stock chamber 524. In addition, since the mask stock chamber is vacant at the time of vapor deposition, it is possible to stock the substrate after film formation or processing.
[0093]
Next, the substrate is transferred from the transfer chamber 502 to the delivery chamber 507, and further, the substrate is transferred from the transfer chamber 507 to the transfer chamber 504a without being exposed to the atmosphere.
[0094]
Next, the substrate is appropriately transferred to the deposition chambers 506R, 506G, 506B, 506R ′, 506G ′, and 506B ′ connected to the transfer chamber 504a or the transfer chamber 504b, so that the hole injection layer, the hole transport layer, and the light emission are emitted. An organic compound layer made of a low molecule to be a layer, an electron transport layer, or an electron injection layer is appropriately formed. By appropriately selecting an EL material, a light emitting element that emits light of a single color (specifically, white) or full color (specifically, red, green, and blue) can be formed as the entire light emitting element. Note that the substrate is transferred from the transfer chamber 504a to the transfer chamber 504b through the delivery chamber 540 without being exposed to the atmosphere.
[0095]
In each of the film formation chambers 506R, 506G, 506B, 506R ′, 506G ′, and 506B ′, a movable evaporation source holder is installed as described in the first embodiment. A plurality of vapor deposition source holders are prepared, and a plurality of containers (crucibles) filled with EL materials are appropriately provided, and are installed in the film forming chamber in this state. A film can be selectively formed by setting the substrate by a face-down method, aligning the position of a vapor deposition mask with a CCD or the like, and performing vapor deposition by a resistance heating method.
[0096]
The container (crucible) in which the EL material is enclosed is installed in the installation chambers 526R, 526G, 526B, 526R ′, 526G ′, and 526B ′. Have the material manufacturer store the EL material in a container (typically a crucible) in advance. Note that the installation is preferably performed without exposure to the atmosphere. When the material is transported from the material manufacturer, the crucible is introduced into the installation chamber while being sealed in the second container. Vacuum the installation chamber, remove the crucible from the second container in the installation chamber, and deposit source Install a crucible in the holder.
By doing so, the crucible and the EL material accommodated in the crucible can be prevented from being contaminated.
[0097]
Next, the substrate is transferred to the film formation chambers 510a and 510b by the transfer mechanism installed in the transfer chamber 504b to form a cathode. This cathode is an inorganic film (MgAg, MgIn, CaF) formed by a vapor deposition method using resistance heating. ₂ , LiF, CaN, etc., or a film formed by co-evaporation of an element belonging to Group 1 or 2 of the periodic table and aluminum, or a laminated film thereof. Alternatively, the cathode may be formed by transporting to the deposition chamber 509b and using a sputtering method. Note that the substrate may be transferred from the transfer chamber 504a to the delivery chamber 541 and further transferred to the deposition chamber 509b after being transferred from the transfer chamber 541 to the transfer chamber 508 without being exposed to the atmosphere.
[0098]
In the case of manufacturing a top emission type or dual emission type light emitting device, the cathode is preferably transparent or translucent, and the metal film thin film (1 nm to 10 nm) or the metal film thin film (1 nm). 10 nm) and a transparent conductive film is preferably used as the cathode. In this case, a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ (ZnO), zinc oxide (ZnO), or the like) may be formed.
[0099]
Through the above process, a light-emitting element having a stacked structure is formed.
[0100]
Alternatively, the protective film may be sealed by forming a protective film formed of a silicon nitride film or a silicon nitride oxide film by being transferred to the deposition chambers 513a and 513b connected to the transfer chamber 508. Here, in the film formation chambers 513a and 513b, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided.
[0101]
Alternatively, the protective film may be formed by moving a rod-shaped target with respect to the fixed substrate. Further, the protective film may be formed by moving the substrate with respect to the fixed rod-shaped target.
[0102]
For example, a silicon nitride film can be formed over the cathode by using a disk-shaped target made of silicon and setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Further, a thin film containing carbon as a main component (DLC film, CN film, amorphous carbon film) may be formed as a protective film, or a film formation chamber using a CVD method may be provided separately. Diamond-like carbon film (also called DLC film) is formed by plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron cyclotron resonance (ECR) CVD method, hot filament CVD method, etc.), combustion flame method It can be formed by sputtering, ion beam vapor deposition, laser vapor deposition or the like. The reaction gas used for film formation includes hydrogen gas and hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H ₆ And the like, and ionized by glow discharge, and the ions are accelerated and collided with a negative self-biased cathode to form a film. In addition, the CN film is C as a reactive gas. ₂ H ₄ Gas and N ₂ What is necessary is just to form using gas. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.
[0103]
For example, a protective layer made of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film is formed on the cathode. For example, after forming the cathode, the film is transferred to the film formation chambers 513a and 513b to form the first inorganic insulating film with a thickness of 5 to 50 nm, and the film is transferred to the film formation chamber 506B and has hygroscopicity and transparency by vapor deposition. A relaxation film (such as a layer containing an organic compound) is formed to a thickness of 10 nm to 100 nm, and is again transferred to the deposition chambers 513a and 513b to form a second inorganic insulating film of 5 nm to 50 nm.
[0104]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 508 to the delivery chamber 511 without being exposed to the air, and further transferred from the delivery chamber 511 to the transfer chamber 514. In the transfer chamber 514, the substrate is transferred at atmospheric pressure, but in order to remove moisture, a vacuum and a nitrogen atmosphere at atmospheric pressure can be repeated.
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 514 to the sealing chamber 516.
[0105]
The sealing substrate is prepared by being set in the load chamber 517 from the outside. Note that vacuum annealing is preferably performed in advance in the multistage heating chamber 516 in order to remove impurities such as moisture. When forming a sealing material to be bonded to a substrate provided with a light emitting element on the sealing substrate, the sealing material is formed in the sealing chamber, and the sealing substrate on which the sealing material is formed is used as the sealing substrate stock chamber. Transport to 530. Note that a desiccant may be provided on the sealing substrate in the sealing chamber. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0106]
Next, the substrate and the sealing substrate are bonded to each other in the sealing and extraction chamber 519, the pair of bonded substrates are sealed, and the sealing material is cured by irradiating UV light with an ultraviolet irradiation mechanism provided in the extraction chamber 519. . In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0107]
Next, the pair of bonded substrates is sealed and taken out from the take-out chamber 519.
[0108]
As described above, by using the manufacturing apparatus illustrated in FIG. 1, it is not necessary to expose the light-emitting element to the atmosphere until the light-emitting element is completely enclosed in a sealed space, and thus a highly reliable light-emitting device can be manufactured. Note that it is desirable that the transfer chambers 502, 504a, 504b, and 508 are always kept in vacuum.
[0109]
Although not shown here, a control device for controlling work in each processing chamber, a control device for transferring between the processing chambers, and a path for moving the substrate to each processing chamber are controlled. A control device that realizes automation is provided.
[0110]
Moreover, in the manufacturing apparatus shown in FIG. 1, after carrying in the board | substrate with which the transparent conductive film (or metal film (TiN) was provided as an anode and forming the layer containing an organic compound, a transparent or translucent cathode (for example, A top emission (or double emission) light emitting element can be formed by forming a thin metal film (a laminate of Al, Ag) and a transparent conductive film). Indicates an element that transmits light emitted from the organic compound layer through the cathode.
[0111]
Moreover, in the manufacturing apparatus shown in FIG. 1, after carrying in the board | substrate with which the transparent conductive film was provided as an anode and forming the layer containing an organic compound, by forming the cathode which consists of a metal film (Al, Ag), It is also possible to form a bottom emission type light emitting element. Note that a bottom emission light-emitting element refers to an element that extracts light generated in an organic compound layer from an anode, which is a transparent electrode, toward a TFT and further passes through a substrate.
[0112]
Further, this embodiment mode can be freely combined with Embodiment Mode 1.
[0113]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0114]
(Example)
[Example 1]
In this embodiment, an example of a film formation chamber in which the film formation chamber can be cleaned and the evaporation mask can be cleaned without opening to the atmosphere. FIG. 6 is an example of a cross-sectional view of the film forming apparatus of the present invention.
[0115]
As shown in FIG. 6, an example in which plasma 1301 is generated between an evaporation mask 1302a connected to a high-frequency power source 1300a via a capacitor 1300b and an electrode 1302b is shown.
[0116]
In FIG. 6, a vapor deposition mask 1302a fixed to the holder is provided in contact with a location where the substrate is provided (location shown by a dotted line in the drawing), and further below it is heated to different temperatures. A possible deposition source holder 1322 is also provided. Note that the evaporation source holder 1322 can be moved in the X direction, the Y direction, or the Z direction by a moving mechanism 1328.
[0117]
Vapor deposition source When the internal organic compound is heated to the sublimation temperature by a heating means (typically a resistance heating method) provided in the holder, it is vaporized and deposited on the surface of the substrate. Note that when vapor deposition is performed, the substrate shutter 1320 is moved to a position where vapor deposition is not hindered. Also vapor deposition source The holder is also provided with a shutter 1321 that moves together, and is moved to a position where vapor deposition is not hindered when vapor deposition is desired.
[0118]
Further, during vapor deposition, a gas that makes it possible to include a material having a small atomic radius in the organic compound film by flowing a small amount of particles smaller than the particles of the organic compound material, that is, a gas composed of a material having a small atomic radius. An introduction system is provided. Specific examples of the material gas having a small atomic radius include silane-based gases (monosilane, disilane, trisilane, etc.), SiF ₄ , GeH ₄ , GeF ₄ , SnH ₄ Or hydrocarbon gas (CH ₄ , C ₂ H ₂ , C ₂ H ₄ , C ₆ H ₆ Or the like may be used. Note that a mixed gas obtained by diluting these gases with hydrogen, argon, or the like is also included. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, since residual gas (oxygen, moisture, other impurities, etc.) contained in the gas can be removed in advance, introduction of these impurities into the apparatus can be prevented.
[0119]
For example, when a monosilane gas is introduced at the time of vapor deposition, Si is contained in the film, and after completing a light-emitting element, when there is a defective portion such as a pinhole or a short circuit, the defective portion generates heat, and thus Si is By reacting, insulating insulators such as SiOx and SiCx are formed, leakage at pinholes and short portions is reduced, and a self-healing effect that dots (such as dark spots) do not progress is also obtained.
[0120]
Further, the component of the material gas introduced by heating the substrate may be efficiently deposited on the substrate.
[0121]
Further, it may be radicalized by plasma generating means. For example, in the case of monosilane, silicon oxide precursors such as SiHx, SiHxOy, and SiOy are generated by the plasma generation means, and these are deposited on the substrate together with the organic compound material from the evaporation source. Monosilane easily reacts with oxygen and moisture, and can reduce the oxygen concentration and moisture content in the deposition chamber.
[0122]
In addition, a magnetic levitation type turbo molecular pump 1326 and a cryopump 1327 are provided as the evacuation processing chamber so that various gases can be introduced. As a result, the ultimate vacuum in the film formation chamber is 10 ^-5 -10 ^-6 Pa can be used. It should be noted that after evacuation by the cryopump 17, the cryopump 17 is stopped, and vacuum evaporation is performed by the turbo molecular pump 16, and deposition is performed while flowing a material gas of several sccm. Further, using an ion plating method, vapor deposition may be performed while ionizing a material gas in a deposition chamber and attaching it to an evaporated organic material.
[0123]
After the vapor deposition is completed, the substrate is taken out and cleaning is performed to remove the jig provided in the film formation apparatus and the vapor deposition material attached to the inner wall of the film formation apparatus without releasing to the atmosphere.
[0124]
Also, when cleaning, vapor deposition source It is preferable to move the holder 1322 to an installation chamber (not shown here).
[0125]
In this cleaning, the wire electrode 1302b is moved to a position facing the vapor deposition mask 1302a. Further, a gas is introduced into the film formation chamber 1303. As gas introduced into the deposition chamber 1303, Ar, H ₂ , F ₂ , NF ₃ Or O ₂ One or a plurality of gases selected from the above may be used. Next, a high frequency electric field is applied to the vapor deposition mask 1302a from the high frequency power source 1300a to form gases (Ar, H, F, NF). ₃ Or O) is excited to generate plasma 1301. In this manner, plasma 1301 is generated in the film formation chamber 1303, vaporized substances attached to the wall of the film formation chamber, the deposition shield 1305, or the vapor deposition mask 1302 a are vaporized and exhausted outside the film formation chamber. With the film forming apparatus shown in FIG. 6, the film forming chamber or the evaporation mask can be cleaned without being exposed to the atmosphere during maintenance.
[0126]
Note that although an example in which the deposition mask 1302a is generated between the mask 1302b and the electrode 1302b disposed between the deposition source holder 1306 is shown here, the invention is not particularly limited and plasma generation means is provided. If you do. Further, a high frequency power source may be connected to the electrode 1302b, the wire electrode 1302b may be a plate-like or mesh-like electrode, or an electrode into which gas can be introduced like a shower head.
As a plasma generation method, ECR, ICP, helicon, magnetron, two frequencies, triode, LEP, or the like can be used as appropriate.
[0127]
The cleaning with plasma may be performed for each film formation process, or may be performed after a plurality of film formation processes.
[0128]
In addition, this embodiment can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.
[0129]
[Example 2]
In this embodiment, an example of a film forming apparatus for introducing a material gas of several sccm at the time of vapor deposition is shown in FIG.
[0130]
In FIG. 7, 20 is a substrate, 21 is a chamber wall, 22 is a substrate holder, 23 is a cell, 25a is an evaporated first material, 25b is an evaporated second material, 26 is a turbo molecular pump, and 27 is A cryopump 28 is a moving mechanism for moving the cell.
Since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus that can handle a large-area substrate. Further, the deposition cell 23 can be uniformly formed by moving the deposition cell 23 in the X-axis direction, the Y-axis direction, or the Z-axis direction with respect to the substrate.
[0131]
In the vapor deposition apparatus of the present invention, during vapor deposition, the distance d between the substrate 20 and the vapor deposition cell 23 is typically 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm, and the utilization efficiency of the vapor deposition material. And the throughput is remarkably improved.
[0132]
Moreover, the organic compound with which the vapor deposition cell 23 is equipped does not necessarily need to be 1 type or 1 type, and multiple may be sufficient as it. For example, in addition to one kind of material provided as a light-emitting organic compound in the evaporation source holder, another organic compound (dopant material) that can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) that has lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transporting region and the excitation of the electron transport layer. It is preferable to design so that it may become lower than energy. This prevents the diffusion of the molecular excitons of the dopant and allows the dopant to emit light effectively. Further, if the dopant is a carrier trap type material, the carrier recombination efficiency can also be increased. In addition, a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant is also included in the present invention. In forming the mixed region, a concentration gradient may be provided in the mixed region.
[0133]
Further, when a plurality of organic compounds are provided in one vapor deposition source holder, it is desirable that the evaporation direction is oblique so as to intersect at the position of the vapor deposition object so that the organic compounds are mixed with each other. In order to perform co-evaporation, the deposition cell may be provided with four types of deposition materials (for example, two types of host materials as the deposition material a and two types of dopant materials as the deposition material b).
[0134]
In addition, when the main process in which impurities such as oxygen and water may be mixed into the EL material or metal material to be deposited is given, the process of setting the EL material in the film formation chamber before the deposition, the deposition process, etc. Can be considered.
[0135]
Therefore, it is preferable that the pretreatment chamber connected to the film formation chamber is provided with a globe, the vapor deposition source is moved from the film formation chamber to the pretreatment chamber, and the vapor deposition material is set in the vapor deposition source in the pretreatment chamber. That is, the manufacturing apparatus moves the vapor deposition source to the pretreatment chamber. By doing so, the vapor deposition source can be set while maintaining the cleanliness of the film forming chamber.
[0136]
Also in the film forming apparatus shown in FIG. 7, in the same manner as in Example 1, a material gas is intentionally introduced at the time of film formation, and a component of the material gas is included in the organic compound film to obtain a high-density film. be able to. By including a component of the material gas in the organic compound film, impurities such as oxygen and moisture that cause deterioration can be blocked from entering and diffusing into the film, and the reliability of the light emitting element can be improved.
[0137]
Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment 1.
[0138]
[Example 3]
In the first embodiment, an example is shown in which the shutter is heated using a heating lamp to collect deposits. In this embodiment, an example in which a part of an empty container is used as the shutter is shown in FIG.
[0139]
FIG. 8A shows vapor deposition. source The state where the movement of the holder 600 is stopped and the film formation is stopped is shown. The material heated by the heater 603 and sublimated from the container 602a adheres to the inner wall of the shutter container 602b. Vapor deposition is performed by opening and closing the shutter 602b. In the case of the present example, since the hole is not opened in the shutter as in the first embodiment and the film is stopped, the deposition rate cannot be measured by a film thickness monitor (not shown), and therefore the temperature is controlled by the heater temperature.
[0140]
Then, the shutter 602b is removed in an installation chamber (not shown), and the upper part 601 serving as a lid is attached to complete the container made up of 602a and 601 and the collected deposits are stored. (FIG. 8 (B)) It should be noted that branches and protrusions may be provided on the inner wall of the shutter 602b so as to adhere efficiently and prevent the deposit from falling.
[0141]
Then vapor deposition source A container composed of 602a and 601 is set in the holder 600 in the installation chamber, and the collected deposits are sublimated again by heating the container. (Fig. 8 (C))
[0142]
The vapor deposition material can be reused by the above procedure.
[0143]
Also, the work of removing the shutter 602b, the work of attaching the upper part 601 serving as a lid, and the deposition of a container made up of 602a and 601 source A mechanism for automatically performing all or part of the operation of setting the holder 600 may be provided in the installation room.
[0144]
In addition, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment Mode 1, or Embodiment 2.
[0145]
[Example 4]
In the present embodiment, the configuration of the substrate holding means will be described in detail with reference to FIG. A substrate holding means for supporting the substrate is provided so that a portion which becomes a scribe line is in contact with a large area substrate when performing multi-cavity (forming a plurality of panels from one substrate). That is, the substrate is placed on the substrate holding means, the vapor deposition material is sublimated from the vapor deposition source holder provided below the substrate holding means, and vapor deposition is performed in a region not in contact with the substrate holding means. By doing so, the deflection of the large area substrate can be suppressed to 1 mm or less.
[0146]
In the case where a mask (typically a metal mask) is used, the mask may be placed on the substrate holding means and the substrate may be placed on the mask. By doing so, the deflection of the mask can be suppressed to 1 mm or less. Further, the deposition mask may be in close contact with the substrate, or a substrate holder or a deposition mask holder that is fixed with a certain distance may be provided as appropriate.
[0147]
When cleaning the mask or chamber inner wall, the substrate holding means is made of a conductive material, and plasma is generated by a high frequency power source connected to the substrate holding means to remove the vapor deposition material attached to the mask or chamber inner wall. do it.
[0148]
FIG. 9A shows a perspective view of the substrate holding means 301 on which the substrate 1403 and the mask 1402 are placed, and FIG. 9B shows only the substrate holding means 1401.
[0149]
FIG. 9C shows a cross-sectional view of the substrate holding means on which the substrate 1403 and the mask 1402 are placed, and the cross-sectional shape of the substrate holding means is H-shaped so as to withstand the weight of the substrate. The height h of the substrate holding means is 10 mm to 50 mm, and the width w is 1 mm to 5 mm of a metal plate (typically Ti).
[0150]
The substrate holding means 1401 can suppress the deflection of the substrate or the mask.
[0151]
Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment 1, Embodiment 2, or Embodiment 3.
[0152]
[Example 5]
In this example, an energy barrier existing in an organic compound film is relaxed to improve carrier mobility, and at the same time, an element having functions of a plurality of materials as in the functional separation of a stacked structure is manufactured. Show.
[0153]
Regarding the relaxation of the energy barrier in the laminated structure, it is noticeable in the technique of inserting the carrier injection layer. That is, the energy barrier can be designed in a step shape by inserting a material that relaxes the energy barrier at the interface of the stacked structure having a large energy barrier. As a result, the carrier injection property from the electrode can be improved and the drive voltage can be lowered to some extent. However, the problem is that by increasing the number of layers, the number of organic interfaces increases conversely. This is considered to be the reason why the single layer structure holds the top data of the driving voltage and power efficiency. In other words, by overcoming this point, while taking advantage of the laminated structure (a variety of materials can be combined and no complicated molecular design is required), the driving voltage and power efficiency of the single layer structure can be achieved. I can catch up.
[0154]
Therefore, in this example, when an organic compound film composed of a plurality of functional regions is formed between the anode and the cathode of the light emitting element, the first functional region and the first functional region are not the conventional laminated structure in which a clear interface exists. A structure having a mixed region made of both the material constituting the first functional region and the material constituting the second functional region is formed between the two functional regions.
[0155]
By applying such a structure, it is considered that the energy barrier existing between the functional regions is reduced as compared with the conventional structure, and the carrier injection property is improved. That is, the energy barrier between the functional regions is relaxed by forming a mixed region. Therefore, it is possible to reduce the drive voltage and prevent the luminance from being lowered.
[0156]
From the above, in this example, the region in which the first organic compound can function (the first functional region) and the second organic compound different from the substance constituting the first functional region function. In manufacturing a light-emitting element including at least a region that can be expressed (second functional region) and a light-emitting device having the light-emitting element, the first functional region and the first functional region are formed using the film formation apparatus illustrated in FIG. A mixed region composed of an organic compound constituting the first functional region and an organic compound constituting the second functional region is produced between the two functional regions.
[0157]
In the film forming apparatus shown in FIG. 6 or FIG. 7, an organic compound film having a plurality of functional regions is formed in one film forming chamber, and a plurality of crucibles installed in the evaporation source are provided accordingly. It has been. A substrate on which the anode is formed is carried in and set.
[0158]
First, the first organic compound provided in the first crucible is deposited.
Note that the first organic compound is vaporized by resistance heating in advance, and is scattered in the direction of the substrate when the first shutter is opened during vapor deposition. In vapor deposition, a material gas, here monosilane gas, is introduced and contained in the film. Accordingly, the first functional region 410 illustrated in FIG. 10A can be formed.
[0159]
Then, with the first organic compound deposited, the second shutter is opened, and the second organic compound provided in the second material chamber is deposited. Note that the second organic compound is also vaporized by resistance heating in advance, and is scattered in the direction of the substrate when the second shutter is opened at the time of vapor deposition. In vapor deposition, a material gas, here monosilane gas, is introduced and contained in the film. Here, the first mixed region 411 composed of the first organic compound and the second organic compound can be formed.
[0160]
Then, after a while, only the first shutter is closed and the second organic compound is deposited. In vapor deposition, a material gas, here monosilane gas, is introduced and contained in the film. Thereby, the second functional region 412 can be formed.
[0161]
In this example, a method of forming a mixed region by simultaneously depositing two kinds of organic compounds was shown. However, after depositing the first organic compound, the second organic compound was deposited in the deposition atmosphere. By vapor-depositing, a mixed region can be formed between the first functional region and the second functional region.
[0162]
Next, with the second organic compound deposited, the third shutter is opened, and the third organic compound provided in the third material chamber is deposited. Note that the third organic compound is also vaporized in advance by resistance heating, and is scattered in the direction of the substrate when the third shutter is opened during vapor deposition. In vapor deposition, a material gas, here monosilane gas, is introduced and contained in the film. Here, the second mixed region 413 composed of the second organic compound and the third organic compound can be formed.
[0163]
Then, after a while, only the second shutter is closed and a third organic compound is deposited. In vapor deposition, a material gas, here monosilane gas, is introduced and contained in the film. Then, the third shutter is closed to complete the deposition of the third organic compound. Thereby, the third functional region 414 can be formed.
[0164]
Finally, a light emitting element formed by the film forming apparatus of the present invention is completed by forming a cathode.
[0165]
Furthermore, as another organic compound film, as shown in FIG. 10B, after the first functional region 420 is formed using the first organic compound, the first organic compound and the second organic compound are formed. The first mixed region 421 is formed, and the second functional region 422 is formed using a second organic compound. Then, during the formation of the second functional region 422, the second mixed region 423 is formed by temporarily opening the third shutter and simultaneously depositing the third organic compound.
[0166]
After a while, the second functional region 422 is formed again by closing the third shutter. And a light emitting element is formed by forming a cathode.
[0167]
6 or 7 capable of forming the organic compound film as described above can form an organic compound film having a plurality of functional regions in the same film formation chamber. A mixed region can be formed. As described above, a light-emitting element having a plurality of functions can be manufactured without showing a clear stacked structure (that is, without a clear organic interface).
[0168]
6 or 7 can intentionally introduce a material gas (monosilane gas) at the time of film formation and include a component of the material gas in the organic compound film. By including a material with a small atomic radius (typically silicon), it is possible to make the molecules in the mixed region more fit. Therefore, it is possible to further reduce the driving voltage and prevent the luminance from being lowered. Further, impurities such as oxygen and moisture in the deposition chamber can be further removed by the material gas, and a high-density organic compound layer can be formed.
[0169]
Further, this embodiment can be freely combined with Embodiment Mode 1, Embodiment Mode 2, Embodiment 1, Embodiment 2, Embodiment 3, or Embodiment 4.
[0170]
[Example 6]
In this embodiment, an example of manufacturing a light-emitting device (a top emission structure) including a light-emitting element having an organic compound layer as a light-emitting layer over a substrate having an insulating surface is shown in FIG.
[0171]
11A is a top view illustrating the light-emitting device, and FIG. 11B is a cross-sectional view taken along line AA ′ in FIG. 11A. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a transparent sealing substrate, 1105 denotes a first sealing material, and the inside surrounded by the first sealing material 1105 is filled with a transparent second sealing material 1107. Note that the first sealing material 1105 contains a gap material for maintaining the distance between the substrates.
[0172]
Reference numeral 1108 denotes a wiring for transmitting signals input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103. A video signal and a clock signal are received from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.
[0173]
Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1110. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are shown as the driver circuits.
[0174]
Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate. Further, the structure of a TFT having a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.
[0175]
The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to the drain thereof. The current control TFT 1112 may be an n-channel TFT or a p-channel TFT, but when connected to the anode, it is preferably a p-channel TFT. In addition, it is preferable to appropriately provide a storage capacitor (not shown). Note that here, only a cross-sectional structure of one pixel among the infinitely arranged pixels is shown, and an example in which two TFTs are used for the one pixel is shown. However, three or more TFTs are appropriately used. , May be used.
[0176]
Here, since the first electrode 1113 is in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer that can be in ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable that the uppermost layer in contact is a material layer having a large work function. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . The first electrode 1113 may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film, or a stack of three or more layers may be used.
[0177]
In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1114 are formed on both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1114, a positive-type photosensitive acrylic resin film is used to form the insulator having the shape shown in FIG.
[0178]
In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1114. For example, when positive photosensitive acrylic is used as a material for the insulator 1114, it is preferable that only the upper end portion of the insulator 1114 have a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 1114, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.
[0179]
Alternatively, the insulator 1114 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.
[0180]
A layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by vapor deposition while introducing monosilane gas. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi, CaF) ₂ Or CaN). Here, as the second electrode (cathode) 1116 so that light is transmitted, a thin metal film, a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ (ZnO), zinc oxide (ZnO), or the like) is used. In this manner, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. In this example, as the layer 1115 containing an organic compound, an aromatic diamine layer (TPD), a p-EtTAZ layer, and an Alq ₃ Layer and Alq doped with Nile Red ₃ Layers and Alq ₃ The layers are sequentially stacked to obtain white light emission. In this embodiment, since the light-emitting element 1118 emits white light, a color filter including a colored layer 1131 and a light-blocking layer (BM) 1132 (for the sake of simplicity, an overcoat layer is not shown here) is provided.
[0181]
Further, if each layer containing an organic compound capable of emitting R, G, and B is selectively formed, a full color display can be obtained without using a color filter.
[0182]
In addition, a transparent protective laminate 1117 is formed to seal the light emitting element 1118. This transparent protective laminate 1117 is formed of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film. As the first inorganic insulating film and the second inorganic insulating film, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (by a sputtering method or a CVD method) ( A composition ratio N <O)) and a thin film mainly containing carbon (for example, a DLC film or a CN film) can be used. These non-insulating films have a high blocking effect against moisture. However, as the film thickness increases, the film stress increases and peeling or film peeling tends to occur. However, by sandwiching the stress relaxation film between the first inorganic insulating film and the second inorganic insulating film, stress can be relaxed and moisture can be absorbed. Even if a minute hole (pinhole or the like) is formed in the first inorganic insulating film for some reason during film formation, it is filled with a stress relaxation film and a second inorganic insulating film is provided thereon. Therefore, it has a very high blocking effect against moisture and oxygen. Further, as the stress relaxation film, a material having a lower stress than the inorganic insulating film and having a hygroscopic property is preferable. In addition, it is desirable that the material has translucency. As the stress relaxation film, α-NPD (4,4′-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl), BCP (bathocuproine), MTDATA (4,4 ′, 4 ″- Tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine), Alq ₃ Material films containing an organic compound such as (Tris-8-quinolinolato aluminum complex) may be used, and these material films have hygroscopicity and are almost transparent as long as the film thickness is small. MgO, SrO ₂ , SrO has hygroscopicity and translucency, and a thin film can be obtained by a vapor deposition method, so that it can be used as a stress relaxation film. In this embodiment, a film formed in an atmosphere containing nitrogen and argon using a silicon target, that is, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metal is used as the first inorganic insulating film or the first film. 2 as an inorganic insulating film, and Alq as a stress relaxation film by vapor deposition. ₃ The thin film is used. Moreover, in order to allow light emission to pass through the transparent protective laminate, it is preferable to make the total thickness of the transparent protective laminate as thin as possible.
[0183]
In addition, in order to seal the light emitting element 1118, the sealing substrate 1104 is attached to the first sealing material 1105 and the second sealing material 1107 in an inert gas atmosphere. Note that an epoxy resin is preferably used as the first sealing material 1105 and the second sealing material 1107. The first sealing material 1105 and the second sealing material 1107 are preferably materials that do not transmit moisture and oxygen as much as possible.
[0184]
In this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the first sealing material 1105 and the second sealing material 1107, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).
[0185]
By enclosing the light emitting element in the first sealing material 1105 and the second sealing material 1107 as described above, the light emitting element can be completely blocked from the outside, and deterioration of the organic compound layer such as moisture and oxygen from the outside can be performed. It can prevent the urging substance from entering. Therefore, a highly reliable light-emitting device can be obtained.
[0186]
In addition, when a transparent conductive film is used for the first electrode 1113, a double-sided light-emitting device can be manufactured.
[0187]
Here, a dual emission type light-emitting device will be described with reference to FIG.
[0188]
FIG. 13A illustrates a cross section of part of the pixel portion. FIG. 13B shows a simplified stack structure in the light emitting region. As shown in FIG. 13B, light emission can be emitted to both the upper surface and the lower surface. Note that examples of the arrangement of the light emitting regions, that is, the arrangement of the pixel electrodes include a stripe arrangement, a delta arrangement, and a mosaic arrangement.
[0189]
In FIG. 3A, 300 is a first substrate, 301a and 301b are insulating layers, 302 is a TFT, 318 is a first electrode (transparent conductive layer), 309 is an insulator, 310 is an EL layer, and 311 is a first layer. 2, 312 is a transparent protective layer, 313 is a second sealing material, and 314 is a second substrate.
[0190]
A TFT 302 (p-channel TFT) provided over the first substrate 300 is an element that controls a current flowing through the EL layer 310 that emits light, and a drain region (or a source region) 304. Reference numeral 306 denotes a drain electrode (or source electrode) that connects the first electrode and the drain region (or source region). In addition, a wiring 307 such as a power supply line or a source wiring is formed at the same time in the same process as the drain electrode 306. Here, an example is shown in which the first electrode and the drain electrode are formed separately, but they may be the same. An insulating layer 301a serving as a base insulating film (here, a nitride insulating film as a lower layer and an oxide insulating film as an upper layer) is formed over the first substrate 300. Between the gate electrode 305 and the active layer, A gate insulating film is provided. Reference numeral 301b denotes an interlayer insulating film made of an organic material or an inorganic material. Although not shown here, one or more other TFTs (n-channel TFTs or p-channel TFTs) are provided in one pixel. Although a TFT having one channel formation region 303 is shown here, the TFT is not particularly limited and may be a TFT having a plurality of channels.
[0191]
Reference numeral 318 denotes a first electrode made of a transparent conductive film, that is, an anode (or cathode) of an EL element. Transparent conductive films include ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like can be used.
[0192]
In addition, an insulator 309 (referred to as a bank, a partition, a barrier, a bank, or the like) is provided to cover an end portion (and the wiring 307) of the first electrode 318. As the insulator 309, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a material thereof For example, a photosensitive organic resin covered with a silicon nitride film is used.
For example, when positive photosensitive acrylic is used as the organic resin material, it is preferable that only the upper end portion of the insulator has a curved surface having a curvature radius. As the insulator, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.
[0193]
The layer 310 containing an organic compound is formed by an evaporation method or a coating method.
Note that in order to improve reliability, it is preferable to perform deaeration by performing vacuum heating (100 ° C. to 250 ° C.) immediately before the formation of the layer 310 containing an organic compound. For example, when the vapor deposition method is used, the degree of vacuum is 5 × 10. ^-3 Torr (0.665 Pa) or less, preferably 10 ^-4 -10 ^-6 Vapor deposition is performed in a deposition chamber evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized by resistance heating in advance, and is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound scatters upward and is deposited on the substrate through an opening provided in the metal mask.
[0194]
For example, Alq ₃ , Alq partially doped with Nile Red, a red luminescent dye ₃ , Alq ₃ , P-EtTAZ and TPD (aromatic diamine) can be sequentially laminated by vapor deposition to obtain white color.
[0195]
Reference numeral 311 denotes a second electrode made of a conductive film, that is, a cathode (or an anode) of the light emitting element. Examples of the material of the second electrode 311 include MgAg, MgIn, AlLi, and CaF. ₂ Alternatively, an alloy such as CaN, or a light-transmitting film formed by co-evaporation with an element belonging to Group 1 or Group 2 of the periodic table and aluminum may be used.
Here, since the dual emission type emits light through the second electrode, an aluminum film of 1 nm to 10 nm or an aluminum film containing a small amount of Li is used. When the Al film is used for the second electrode 311, a material in contact with the layer 310 containing an organic compound can be formed using a material other than an oxide, and the reliability of the light-emitting device can be improved. Before forming an aluminum film of 1 nm to 10 nm, CaF is used as a cathode buffer layer. ₂ , MgF ₂ Or BaF ₂ You may form the layer (film thickness 1nm-5nm) which has the translucency which consists of.
[0196]
In order to reduce the resistance of the cathode, a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ -ZnO), zinc oxide (ZnO), etc.) may be formed. Alternatively, in order to reduce the resistance of the cathode, an auxiliary electrode may be provided over the second electrode 311 in a region that does not become a light emitting region. Further, when the cathode is formed, a resistance heating method by vapor deposition is used, and the cathode may be selectively formed using a vapor deposition mask.
[0197]
Reference numeral 312 denotes a transparent protective laminate formed by sputtering or vapor deposition, and serves as a sealing film that protects the second electrode 311 made of a metal thin film and prevents moisture from entering. As shown in FIG. 13B, the transparent protective laminate 312 includes a laminate of an inorganic insulating film 312a, a stress relaxation film 312b, and an inorganic insulating film 312c. As the inorganic insulating film 312a, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by a sputtering method or a CVD method, carbon A thin film (for example, a DLC film or a CN film) whose main component is can be used. These non-insulating films 312a have a high blocking effect against moisture. However, as the film thickness increases, film stress increases and peeling or film peeling tends to occur. However, by sandwiching the stress relaxation film 312b between the inorganic insulating film 312a and the inorganic insulating film 312c, stress can be relaxed and moisture can be absorbed. Further, even if a minute hole (pinhole or the like) is formed in the inorganic insulating film 312a for some reason during film formation, it is filled with the stress relaxation film 312b and further provided with the inorganic insulating film 312c. It has a very high blocking effect against oxygen and oxygen.
[0198]
The stress relaxation film 312b is preferably made of a material having a lower stress than the inorganic insulating films 312a and 312b and having a hygroscopic property. In addition, it is desirable that the material has translucency. As the stress relaxation film 312b, α-NPD (4,4′-bis- [N- (naphthyl) -N-phenyl-amino] biphenyl), BCP (vasocuproin), MTDATA (4,4 ′, 4 ″) -Tris (N-3-methylphenyl-N-phenyl-amino) triphenylamine), Alq ₃ Material films containing an organic compound such as (Tris-8-quinolinolato aluminum complex) may be used, and these material films have hygroscopicity and are almost transparent as long as the film thickness is small. MgO, SrO ₂ , SrO has hygroscopicity and translucency and can be used for the stress relaxation film 312b because a thin film can be obtained by vapor deposition.
[0199]
Alternatively, the stress relaxation film 312b can be formed using the same material as the layer containing an organic compound that is sandwiched between the cathode and the anode.
[0200]
In the case where the inorganic insulating films 312a and 312b can be formed by the sputtering method (or CVD method) and the stress relaxation film 312b can be formed by the vapor deposition method, the substrate is transferred to the vapor deposition chamber and the sputter film formation chamber (or CVD film formation). However, there is an advantage that it is not necessary to newly add a film forming chamber. In addition, an organic resin film can be considered as a stress relaxation film, but since the organic resin film uses a solvent and requires a baking treatment, the number of processes is increased, contamination with solvent components, thermal damage due to baking, degassing, etc. There's a problem.
[0201]
The transparent protective laminate 312 thus formed is optimal as a sealing film for a light-emitting element having a layer containing an organic compound as a light-emitting layer. Further, the transparent protective laminate 312 has a hygroscopic property and also serves to remove moisture.
[0202]
In addition, the second sealant 313 bonds the second substrate 314 and the first substrate 300 together. The first sealing material (not shown here) contains a gap material for securing the gap between the substrates, and is arranged so as to surround the second sealing material 313. The second sealant 313 is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet-curing or thermosetting epoxy resin may be used.
Here, the refractive index is 1.50, the viscosity is 500 cps, the Shore D hardness is 90, the tensile strength is 3000 psi, the Tg point is 150 ° C., and the volume resistance is 1 × 10. ¹⁵ A highly heat resistant UV epoxy resin (manufactured by Electrolite: 2500 Clear) having Ω · cm and withstand voltage of 450 V / mil is used. Further, by filling the second sealant 313 between the pair of substrates, the entire transmittance can be improved as compared with a case where a space (inert gas) is provided between the pair of substrates.
[0203]
In addition, a light-emitting element in which a layer containing an organic compound is formed on the anode and a cathode is formed on the organic compound layer is used, and light emission generated in the layer containing the organic compound is transferred from the transparent electrode anode to the TFT. A structure of taking out (hereinafter referred to as a bottom emission structure) may be employed.
[0204]
Here, an example of a light emitting device having a bottom emission structure is shown in FIG.
[0205]
12A is a top view illustrating the light-emitting device, and FIG. 12B is a cross-sectional view taken along line AA ′ in FIG. 12A. Reference numeral 1201 indicated by a dotted line denotes a source signal line driver circuit, 1202 denotes a pixel portion, and 1203 denotes a gate signal line driver circuit. Further, 1204 is a sealing substrate, 1205 is a sealing material containing a gap material for maintaining the space between the sealed spaces, and the inside surrounded by the sealing material 1205 is an inert gas (typically nitrogen). ). A small amount of moisture is removed from the inner space surrounded by the sealant 1205 by the desiccant 1207 and the interior space is sufficiently dry.
[0206]
Reference numeral 1208 denotes a wiring for transmitting signals input to the source signal line driver circuit 1201 and the gate signal line driver circuit 1203, and a video signal and a clock signal are received from an FPC (flexible printed circuit) 1209 as an external input terminal. receive.
[0207]
Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over the substrate 1210. Here, a source signal line driver circuit 1201 and a pixel portion 1202 are shown as the driver circuits. Note that as the source signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed.
[0208]
The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211, a current control TFT 1212, and a first electrode (anode) 1213 made of a transparent conductive film electrically connected to the drain thereof.
[0209]
Here, the first electrode 1213 is formed so as to partially overlap with the connection electrode, and the first electrode 1213 is electrically connected to the drain region of the TFT through the connection electrode. The first electrode 1213 is a transparent conductive film having a large work function (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ -ZnO), zinc oxide (ZnO) or the like is preferably used.
[0210]
In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1214 are formed at both ends of the first electrode (anode) 1213. In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1214. Alternatively, the insulator 1214 may be covered with a protective film made of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.
[0211]
Further, an organic compound material is deposited on the first electrode (anode) 1213 while introducing a monosilane gas, so that a layer 1215 containing an organic compound is selectively formed.
Further, a second electrode (cathode) 1216 is formed over the layer 1215 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi, CaF) ₂ Or CaN). In this manner, a light-emitting element 1218 including the first electrode (anode) 1213, the layer 1215 containing an organic compound, and the second electrode (cathode) 1216 is formed. The light emitting element 1218 emits light in the direction of the arrow shown in FIG. Here, the light-emitting element 1218 is one of light-emitting elements that can obtain R, G, or B monochromatic light emission, and includes three layers each including an organic compound that selectively emits R, G, and B light-emitting elements. Full color with light emitting elements.
[0212]
In addition, a protective stack 1217 is formed in order to seal the light emitting element 1218. The protective laminate includes a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film.
[0213]
In addition, in order to seal the light emitting element 1218, a sealing substrate 1204 is attached with a sealant 1205 in an inert gas atmosphere. A recess formed in advance by a sandblast method or the like is formed in the sealing substrate 1204, and a desiccant 1207 is attached to the recess. Note that an epoxy resin is preferably used as the sealant 1205. The sealing material 1205 is preferably a material that does not transmit moisture and oxygen as much as possible.
[0214]
In this embodiment, the material constituting the sealing substrate 1204 having the recesses is a metal substrate, a glass substrate, a quartz substrate, or FRP (Fiberglass-Reinforced Plastics).
A plastic substrate made of PVF (polyvinyl fluoride), mylar, polyester, acrylic, or the like can be used. It is also possible to seal with a metal can with a desiccant attached inside.
[0215]
In addition, this embodiment can be freely combined with any one of Embodiment Mode 1, Embodiment Mode 2, and Embodiments 1 to 5.
[0216]
[Example 7]
An electronic device can be manufactured by incorporating a light-emitting device obtained by implementing the present invention into a display portion. Electronic devices include video cameras, digital cameras, goggles-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook-type personal computers, game machines, and portable information terminals (mobile computers, A mobile phone, a portable game machine, an electronic book, etc.), and an image playback apparatus (specifically, a digital versatile disc (DVD)) provided with a recording medium, and a display capable of displaying the image Apparatus). Specific examples of these electronic devices are shown in FIGS.
[0217]
FIG. 14A illustrates a television which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The present invention can be applied to the display portion 2003. Note that all information display televisions such as a personal computer, a TV broadcast reception, and an advertisement display are included.
[0218]
FIG. 14B shows a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The present invention can be applied to the display portion 2102.
[0219]
FIG. 14C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The present invention can be applied to the display portion 2203.
[0220]
FIG. 14D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The present invention can be applied to the display portion 2302.
[0221]
FIG. 14E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays character information, the present invention can be applied to the display portions A, B 2403, and 2404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.
[0222]
FIG. 14F shows a game machine, which includes a main body 2501, a display portion 2505, operation switches 2504, and the like.
[0223]
FIG. 14G shows a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. . The present invention can be applied to the display portion 2602.
[0224]
FIG. 14H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The present invention can be applied to the display portion 2703. Note that the display portion 2703 can suppress current consumption of the mobile phone by displaying white characters on a black background.
[0225]
As described above, the display device obtained by implementing the present invention may be used as a display unit of any electronic device. Note that a light-emitting device manufactured using any structure of Embodiment Mode 1, Embodiment Mode 2, and Examples 1 to 6 may be used for the electronic device of this embodiment mode.
[0226]
【The invention's effect】
According to the present invention, vapor deposition source Cleaning the parts of the holder, typically a film thickness monitor, a shutter, etc., can reduce the replacement frequency and maintain the cleanliness in the film forming chamber.
[0227]
Further, according to the present invention, the distance between the substrate and the vapor deposition source holder can be shortened, and the vapor deposition apparatus can be miniaturized. And since a vapor deposition apparatus becomes small, it can reduce that the sublimated vapor deposition material adheres to the inner wall in a film-forming room | chamber, or a deposition shield, and can use vapor deposition material effectively. Furthermore, in the vapor deposition method of the present invention, since it is not necessary to rotate the substrate, it is possible to provide a vapor deposition apparatus that can handle a large area substrate.
[0228]
In addition, the present invention can provide a manufacturing apparatus in which a plurality of film forming chambers that perform vapor deposition are continuously arranged. In this manner, since the parallel processing is performed in the plurality of film formation chambers, the throughput of the light emitting device is improved. A large amount of the same type of panel can be produced by performing parallel processing. Also, different types of panels having different vapor deposition patterns can be simultaneously produced by parallel processing. Moreover, the equipment cost per unit area can be reduced by using a manufacturing apparatus capable of parallel processing.
[0229]
Furthermore, the present invention can provide a manufacturing system that enables a container or a film thickness monitor in which a deposition material is enclosed to be directly installed in a deposition apparatus without being exposed to the atmosphere. According to the present invention as described above, the handling of the vapor deposition material is facilitated, and the contamination of the vapor deposition material can be avoided. With such a manufacturing system, a container enclosed by a material manufacturer can be installed directly on the vapor deposition system, so that the vapor deposition material can prevent oxygen and water from adhering, and it is possible to cope with further ultra-high purity of light emitting elements in the future. It becomes.
That is, according to the present invention, it is possible to realize a manufacturing system that is fully automated to improve throughput, and to realize a consistent closed system that can avoid contamination with impurities.
[Brief description of the drawings]
FIG. 1 is a top view illustrating a second embodiment.
FIG. 2 is a top view showing Embodiment Mode 1;
FIG. 3 is a cross-sectional view showing Embodiment Mode 1;
4 is a cross-sectional view showing Embodiment Mode 1; FIG.
FIG. 5 is a cross-sectional view showing Embodiment Mode 1;
FIG. 6 is a cross-sectional view of the apparatus showing the first embodiment.
FIG. 7 is a device cross-sectional view showing a second embodiment.
8 is a diagram showing Example 3. FIG.
FIG. 9 shows a fourth embodiment.
10 is a diagram showing Example 5. FIG.
FIG. 11 shows a sixth embodiment.
12 is a diagram showing Example 6. FIG.
13 is a diagram showing Example 6. FIG.
FIG 14 illustrates an example of an electronic device. (Example 7)

Claims (17)

A deposition source holder where the deposition source is installed;
Means for resistance heating the vapor deposition source;
Means for cleaning a film thickness monitor for measuring the thickness of the deposited film;
A container mounting turntable for installing a container for sealing the vapor deposition source;
A lid installation base for installing the lid of the container;
Means for moving the lid to the lid installation base;
And a means for moving the vapor deposition source taken out from the container to the vapor deposition source holder. A deposition source holder where the deposition source is installed;
Means for resistance heating the vapor deposition source;
Means for cleaning a film thickness monitor for measuring the thickness of the deposited film;
A container mounting turntable for installing a container for sealing the vapor deposition source;
A lid installation base for installing the lid of the container;
Means for moving the lid to the lid installation base;
Means for moving the vapor deposition source taken out from the container to the vapor deposition source holder; and an installation chamber comprising:
Means for fixing the deposition object;
A film forming chamber comprising: means for moving the vapor deposition source holder;
The vapor deposition apparatus characterized by having. In claim 2,
The deposition apparatus, wherein the deposition source holder is moved between the deposition chamber and the installation chamber by means for moving the deposition source holder in the deposition chamber. In any one of Claim 2 or Claim 3,
The vapor deposition apparatus, wherein the vapor deposition source holder is movable in the X, Y, or Z direction within the film formation chamber by means for moving the vapor deposition source holder in the film formation chamber. In any one of Claims 2 thru | or 4,
The film formation chamber is connected to the film formation chamber, and a vacuum exhaust means for setting the film formation chamber in a reduced pressure atmosphere;
An evaporation apparatus, comprising: an alignment unit that aligns the deposition object and a mask. In any one of Claims 2 thru | or 4,
A plurality of the film formation chambers are provided via a transfer chamber,
Among the plurality of film forming chambers, vapor deposition is performed in parallel in at least two film forming chambers, and a plurality of different panels are manufactured. In any one of Claims 2 thru | or 4,
A plurality of the film formation chambers are provided via a transfer chamber,
Among the plurality of film forming chambers, at least two film forming chambers perform vapor deposition processing in parallel, and a plurality of the same panels are manufactured. In any one of Claims 1 thru | or 7,
The deposition apparatus has a shutter that partitions the deposition chamber. In any one of Claims 1 thru | or 8,
The vapor deposition source has a vapor deposition shutter,
The vapor deposition apparatus, wherein the shutter is provided so as to be spaced from the vapor deposition source. In any one of Claims 1 thru | or 9,
The vapor deposition apparatus includes: an evacuation treatment chamber connected to the installation chamber and having a reduced pressure atmosphere in the installation chamber; and means for introducing a material gas, an inert gas, or a cleaning gas connected to the installation chamber. A vapor deposition apparatus comprising the vapor deposition apparatus. In claim 10,
The material gas may be one or more selected from monosilane, disilane, trisilane, SiF ₄ , GeH ₄ , GeF ₄ , SnH ₄ , CH ₄ , C ₂ H ₂ , C ₂ H ₄ , or C ₆ H ₆ . A vapor deposition apparatus characterized by being a gas. In claim 10,
The inert gas, Ar, or vapor deposition apparatus which is a kind or plural kinds of gases selected from N _2. In claim 10,
The vapor deposition apparatus, wherein the cleaning gas is one or more kinds of gases selected from H ₂ , F ₂ , NF ₃ , and O ₂ . In any one of Claims 1 to 11,
The vapor deposition apparatus, wherein the film thickness monitor is a crystal resonator. A deposition source holder having a means for resistance heating the deposition source and a film thickness monitor for measuring the thickness of the deposition;
A container provided with a lid for sealing the vapor deposition source, a container installation turntable for installing;
An installation room having a lid installation base for installing the lid;
A vapor deposition method using a film forming chamber in which vapor deposition is performed using the vapor deposition source,
Installing the container provided with the lid on the turntable for container installation,
With the container installed on the container installation turntable, the lid is removed,
Installing the removed lid on the lid installation base;
The vapor deposition source is taken out of the container with the lid removed, and installed in the vapor deposition source holder.
The vapor deposition source holder is moved to the film formation chamber, and in the film formation chamber, the vapor deposition process is performed while heating the vapor deposition source by means of the resistance heating,
The deposition method, wherein the film thickness monitor is cleaned in the installation chamber. In claim 15,
A cleaning gas is used for cleaning the film thickness monitor, and the cleaning gas is one or a plurality of gases selected from H ₂ , F ₂ , NF ₃ , or O _2. Method. In claim 15 or claim 16,
The deposition method, wherein the film thickness monitor is a crystal resonator.

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