JP4439827B2 - Manufacturing apparatus and light emitting device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus used for forming a film that can be formed by vapor deposition (hereinafter referred to as vapor deposition material). In particular, the present invention is an effective technique when an organic material is used as a vapor deposition material.
[0002]
[Prior art]
In recent years, research on a light-emitting device having an EL element as a self-luminous element has been actively conducted, and in particular, a light-emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an organic EL display or an organic light emitting diode.
[0003]
Note that the EL element includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The light-emitting device manufactured by the film formation method can be applied to either light emission.
[0004]
Unlike the liquid crystal display device, the light-emitting device is a self-luminous type and has a feature that there is no problem of viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.
[0005]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. A typical example is a “hole transport layer / light emitting layer / electron transport layer” stacked structure proposed by Tang et al. Of Kodak Eastman Company. This structure has very high luminous efficiency, and most of the light emitting devices that are currently under research and development employ this structure.
[0006]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or may be formed using a high molecular weight material.
[0007]
Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are all included in the EL layer.
[0008]
In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element. For this purpose, an EL layer is provided between two types of stripe-shaped electrodes provided so as to be orthogonal to each other. There are two types, a formation method (simple matrix method) and a method (active matrix method) in which an EL layer is formed between a pixel electrode connected to a TFT and arranged in a matrix and a counter electrode.
[0009]
The EL material for forming the EL layer is roughly classified into a low molecular (monomer) material and a high molecular (polymer) material. Of these, the low molecular material is mainly formed by vapor deposition.
[0010]
The EL material is very easily deteriorated, and is easily oxidized and deteriorated in the presence of oxygen or water. Therefore, a photolithography process cannot be performed after the film formation, and in order to form a pattern, it is necessary to separate the film at the same time as the film formation with a mask having an opening (hereinafter referred to as an evaporation mask). Therefore, most of the sublimated organic EL material is attached to the inner wall of the film forming chamber or the deposition shield (a protective plate for preventing the deposition material from adhering to the inner wall of the film forming chamber).
[0011]
Further, in the conventional vapor deposition apparatus, in order to increase the uniformity of the film thickness, the distance between the substrate and the vapor deposition source is widened, and the apparatus itself is enlarged. In addition, since the distance between the substrate and the vapor deposition source is wide, the film formation rate is slow, and the time required for exhausting the film formation chamber is also long and throughput is reduced.
[0012]
In addition, the conventional vapor deposition apparatus has a very low utilization efficiency of expensive EL materials of about 1% or less, and the manufacturing cost of the light emitting device is very expensive.
[0013]
[Problems to be solved by the invention]
The EL material is very expensive, and its gram unit price is several steps higher than that of gold, so that it is desired to use it as efficiently as possible. However, the use efficiency of expensive EL material is low in the conventional vapor deposition apparatus.
[0014]
An object of the present invention is to provide a vapor deposition apparatus that improves the utilization efficiency of EL materials, is excellent in uniformity, and has an excellent throughput.
[0015]
[Means for Solving the Problems]
In the present invention, the distance d between the substrate and the vapor deposition source is typically reduced to 30 cm or less during vapor deposition, and the utilization efficiency and throughput of the vapor deposition material are significantly improved. By reducing the distance d between the substrate and the evaporation source, the size of the film formation chamber can be reduced. By reducing the size of the film formation chamber, the time required for evacuation can be shortened by reducing the volume of the film formation chamber, and the total amount of impurities present in the film formation chamber can be reduced. Etc.) to prevent mixing. The present invention makes it possible to cope with further ultra-high purity of the vapor deposition material in the future.
[0016]
In addition, the vapor deposition source holder in which the container in which the vapor deposition material is sealed is installed moves at a certain pitch with respect to the substrate. In this specification, a manufacturing apparatus having a vapor deposition apparatus provided with a moving vapor deposition holder is referred to as a moving cell cluster system. Further, two or more crucibles, preferably four or six, can be installed in one vapor deposition holder. In the present invention, since the evaporation source holder moves, if the moving speed is high, the evaporation mask is hardly heated, and it is possible to suppress film formation defects caused by the deformation of the mask due to heat.
[0017]
The configuration of the invention disclosed in this specification is as follows.
A film forming apparatus for forming a film on the substrate by evaporating a vapor deposition material from a vapor deposition source disposed facing the substrate,
The film forming chamber in which the substrate is disposed has a vapor deposition source and means for moving the vapor deposition source,
A manufacturing apparatus having a film forming apparatus, wherein film formation is performed by moving the vapor deposition source in the X direction, the Y direction, or zigzag.
[0018]
Further, a film having excellent film thickness uniformity may be formed by providing a mechanism for rotating the substrate in the deposition chamber and simultaneously performing the rotation of the substrate and the movement of the deposition source during the deposition.
[0019]
The configuration of the invention disclosed in this specification is as follows.
A film forming apparatus for forming a film on the substrate by evaporating a vapor deposition material from a vapor deposition source disposed facing the substrate,
The film formation chamber in which the substrate is disposed has a vapor deposition source, means for moving the vapor deposition source, and means for rotating the substrate,
A manufacturing apparatus having a film forming apparatus, wherein the film is formed by moving the vapor deposition source and simultaneously rotating the substrate.
[0020]
In addition, a multi-chamber manufacturing apparatus can be used.
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a film forming chamber connected to the transfer chamber,
The film formation chamber has a vapor deposition source, means for moving the vapor deposition source, and means for rotating the substrate,
A manufacturing apparatus having a film forming apparatus, wherein the film is formed by moving the vapor deposition source and simultaneously rotating the substrate.
[0021]
In each of the above configurations, the interval between the vapor deposition source and the substrate is narrowed to 30 cm or less, preferably 5 cm to 15 cm, and the utilization efficiency and throughput of the vapor deposition material are remarkably improved. These distances may be adjusted by moving means for moving the vapor deposition holder in the Z direction. In the present invention, since the distance between the substrate and the vapor deposition source is narrow, the amount of material flying outside the substrate (for example, the film forming chamber inner wall) can be reduced, and the use efficiency of the material can be improved. If the deposition on the inner wall of the film forming chamber can be reduced, the frequency of maintenance such as cleaning the inner wall of the film forming chamber can be reduced.
[0022]
In each of the above structures, the film formation chamber is connected to an evacuation chamber that evacuates the film formation chamber.
[0023]
In each of the above structures, the vapor deposition source moves in the X direction or the Y direction. In each of the above structures, a mask is provided between the substrate and the evaporation source, and the mask is a mask made of a metal material having a low coefficient of thermal expansion.
[0024]
In addition, as shown in FIG. 6, another configuration of the present invention may be performed by fixing the substrate and moving the evaporation source,
A manufacturing apparatus having a load chamber, a transfer chamber connected to the load chamber, and a film forming chamber connected to the transfer chamber,
The film formation chamber has a vapor deposition source, means for moving the vapor deposition source, and means for fixing the substrate,
A manufacturing apparatus having a film forming apparatus, wherein the substrate is fixed and the vapor deposition source is moved in an X direction or a Y direction to perform film formation.
[0025]
In each of the above structures, the vapor deposition material is an organic compound material or a metal material.
[0026]
In addition, when the main process where impurities such as oxygen and water may be mixed into the EL material or metal material to be deposited is mentioned, the process of setting the EL material or metal material in the deposition apparatus before the deposition, Processes can be considered.
[0027]
Usually, the container for storing the EL material is placed in a brown glass bottle and closed with a plastic lid (cap). It is also conceivable that the container for storing the EL material is insufficiently sealed.
[0028]
Conventionally, when a film is formed by a vapor deposition method, a predetermined amount of evaporating material placed in a container (glass bottle) is taken out, and a container (typical) placed at a position facing a film formation in a vapor deposition apparatus. However, there is a risk that impurities may be mixed in this transfer operation. That is, oxygen, water, and other impurities, which are one cause of deterioration of the EL element, may be mixed.
[0029]
When transferring from a glass bottle to a container, for example, it is conceivable to carry out by a human hand in a pretreatment chamber provided with a glove or the like in a vapor deposition apparatus. However, when the pretreatment chamber is equipped with a glove, it cannot be evacuated and work is performed at atmospheric pressure, and it is difficult to reduce moisture and oxygen in the pretreatment chamber as much as possible even in a nitrogen atmosphere. Met. Although it is conceivable to use a robot, since the evaporation material is in the form of powder, it is difficult to produce a robot that can be transferred. Therefore, it has been difficult to fully automate the process from the process of forming the EL layer on the lower electrode to the process of forming the upper electrode, and to make a consistent closed system capable of avoiding impurity contamination.
[0030]
Therefore, the present invention does not use a conventional container as a container for storing the EL material, typically a brown glass bottle, but directly stores the EL material or the metal material in a container to be installed in the vapor deposition apparatus. It is a manufacturing system that performs vapor deposition after transportation, and realizes prevention of impurities from being mixed into a high-purity vapor deposition material. Further, when directly storing the evaporation material of the EL material, the obtained evaporation material may not be stored separately, but sublimation purification may be directly performed on a container to be installed in the evaporation apparatus. The present invention makes it possible to cope with further ultra-high purity of the vapor deposition material in the future. Alternatively, the metal material may be directly stored in a container to be installed in the vapor deposition apparatus, and vapor deposition may be performed using a heating resistance.
[0031]
The operation of directly storing the vapor deposition material in the container installed in the vapor deposition apparatus is preferably requested by a light emitting device manufacturer using the vapor deposition apparatus to a material manufacturer that produces or sells the vapor deposition material.
[0032]
Also, no matter how high-purity EL material is provided by the material manufacturer, as long as there is a conventional transfer work at the light-emitting device manufacturer, there is a risk of contamination, and the purity of the EL material cannot be maintained, There was a limit in purity. According to the present invention, the light emitting device manufacturer and the material manufacturer cooperate to reduce the contamination of impurities, thereby maintaining the extremely high purity EL material obtained by the material manufacturer, and performing vapor deposition at the light emitting device manufacturer without reducing the purity as it is. be able to.
[0033]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0034]
(Embodiment)
A film forming apparatus of the present invention is shown in FIG. 1A is a cross-sectional view, and FIG. 1B is a top view.
[0035]
In FIG. 1, 11 is a film formation chamber, 12 is a substrate holder, 13 is a substrate, 14 is a vapor deposition mask, 15 is a vapor deposition shield (vapor deposition shutter), 17 is a vapor deposition source holder, 18 is a vapor deposition material, and 19 is a vapor deposition material that has evaporated. 19.
[0036]
The degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Deposition is performed in the film forming chamber 11 evacuated to Pa. At the time of vapor deposition, the vapor deposition material is vaporized (vaporized) in advance by resistance heating, and is scattered in the direction of the substrate 13 by opening a shutter (not shown) at the time of vapor deposition. The evaporated evaporation material 19 scatters upward and is selectively deposited on the substrate 13 through an opening provided in the deposition mask 14.
[0037]
In the vapor deposition apparatus, the vapor deposition source holder includes a crucible, a heater disposed on the outside of the crucible via a heat equalizing member, a heat insulating layer provided on the outside of the heater, and an outer cylinder storing these. The cooling pipe is turned to the outside of the outer cylinder, and a shutter device that opens and closes the opening of the outer cylinder including the opening of the crucible. In this specification, the crucible is a cylindrical container having a relatively large opening formed of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite. It can withstand high temperature, high pressure and reduced pressure.
[0038]
Note that it is preferable that the film formation rate be controlled by a microcomputer.
[0039]
In the vapor deposition apparatus shown in FIG. 1, the distance d between the substrate 13 and the vapor deposition source holder 17 is typically 30 cm or less, preferably 20 cm or less, more preferably 5 cm to 15 cm. Use efficiency and throughput are greatly improved. In the vapor deposition apparatus shown in FIG. 1, the vapor deposition material 18 is housed in the vapor deposition source holder 17 in an elongated container having the same opening width as the substrate. Alternatively, a plurality of crucibles may be arranged in parallel and deposited in an elongated shape.
[0040]
Further, the substrate holder 12 is provided with a mechanism for rotating the substrate 13. In addition, the evaporation source holder 17 is provided with a mechanism that can move in the film forming chamber 11 in the X direction or the Y direction while keeping the level. Although the example which moves only to one direction was shown in FIG. 1, it is not specifically limited, You may move the vapor deposition source holder 17 to a X direction or a Y direction on a two-dimensional plane. Further, the vapor deposition source holder 201 may be reciprocated a plurality of times in the X direction or the Y direction, may be moved obliquely, or may be moved so as to draw an arc. Further, the evaporation source holder 201 may be moved at a constant acceleration, or acceleration / deceleration may be performed near the substrate. For example, the vapor deposition source holder 201 may be moved zigzag as shown in FIG. In FIG. 6, reference numeral 200 denotes a substrate, 201 denotes a vapor deposition holder, and 202 denotes a direction in which the vapor deposition holder moves. In FIG. 6, four crucibles can be installed in the vapor deposition holder 201, and the vapor deposition material 203 a and the vapor deposition material 203 b are filled in different crucibles.
[0041]
The vapor deposition apparatus shown in FIG. 1 is characterized by performing film formation with excellent film thickness uniformity by simultaneously rotating the substrate 13 and moving the vapor deposition source holder 17 during vapor deposition. Further, the substrate may be fixed during vapor deposition, and the substrate may be rotated after vapor deposition.
[0042]
Further, a vapor deposition shutter may be provided on the movable vapor deposition source holder 17. Moreover, the organic compound with which one vapor deposition source holder is equipped does not necessarily need to be one, and plural may be sufficient. For example, in addition to one kind of material provided as a light-emitting organic compound in the vapor deposition source, another organic compound (dopant material) that can be a dopant may be provided together. The organic compound layer to be deposited is composed of a host material and a light emitting material (dopant material) that has lower excitation energy than the host material, and the excitation energy of the dopant is the excitation energy of the hole transporting region and the excitation of the electron transport layer. It is preferable to design so that it may become lower than energy. This prevents the diffusion of the molecular excitons of the dopant and allows the dopant to emit light effectively. Further, if the dopant is a carrier trap type material, the carrier recombination efficiency can also be increased. In addition, a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant is also included in the present invention. In forming the mixed region, a concentration gradient may be provided in the mixed region.
[0043]
In addition, when a plurality of organic compounds are provided in one evaporation source holder, it is desirable that the evaporation direction is oblique so that the organic compounds are mixed with each other at the position of the deposition target. In order to perform co-evaporation, as illustrated in FIG. 6, a vapor deposition holder 201 including four vapor deposition materials (two kinds of host materials as the vapor deposition material a and two kinds of dopant materials as the vapor deposition material b) may be used.
[0044]
Further, since the distance d between the substrate 13 and the vapor deposition source holder 17 is typically 30 cm or less, preferably 5 cm to 15 cm, the vapor deposition mask 14 may also be heated. Therefore, the vapor deposition mask 14 is a metal material having a low coefficient of thermal expansion that is not easily deformed by heat (for example, a high melting point metal such as tungsten, tantalum, chromium, nickel, or molybdenum, or an alloy containing these elements, stainless steel, inconel, hastelloy, etc. For example, a low thermal expansion alloy of 42% nickel, 58% iron, etc. Further, a cooling medium (cooling water, cooling gas) is circulated in the vapor deposition mask in order to cool the vapor deposition mask to be heated. You may provide the mechanism to make.
[0045]
The vapor deposition mask 14 is used when a vapor deposition film is selectively formed, and is not particularly necessary when a vapor deposition film is formed on the entire surface.
[0046]
Further, the substrate holder 12 includes a permanent magnet, a vapor deposition mask made of metal is fixed by a magnetic force, and the substrate 13 sandwiched therebetween is also fixed. Here, an example in which the vapor deposition mask is in close contact with the substrate 13 is shown, but a substrate holder or vapor deposition mask holder that is fixed with a certain distance may be provided as appropriate.
[0047]
The film formation chamber 11 is connected to an evacuation chamber that evacuates the film formation chamber. As the vacuum evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is provided. As a result, the ultimate vacuum in the transfer chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0048]
Further, plasma generation means is provided in the film formation chamber 11, and plasma (Ar, H, F, NF) is formed in the film formation chamber in a state where no substrate is disposed. _Three Or plasma generated by exciting one or more kinds of gases selected from O), and deposits deposited on the deposition chamber wall, deposition shield, or deposition mask are vaporized outside the deposition chamber. It may be cleaned by exhausting it. Thus, it is possible to clean the film formation chamber without touching the atmosphere during maintenance. In the cleaning, the vaporized organic compound can be recovered by an exhaust system (vacuum pump) and reused.
[0049]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0050]
(Example)
[Example 1]
Here, a manufacturing process of an active matrix light-emitting device including a pixel portion and a driver circuit over the same substrate and including an EL element will be described with reference to FIGS.
[0051]
First, as shown in FIG. 2A, a thin film transistor (hereinafter referred to as TFT) 22 is formed by a known manufacturing process over a substrate 21 having an insulating surface. The pixel portion 20a is provided with an n-channel TFT and a p-channel TFT. Here, a p-channel TFT for supplying current to the organic light emitting element is illustrated. The TFT for supplying current to the organic light emitting element may be an n-channel TFT or a p-channel TFT. In addition, an n-channel TFT, a p-channel TFT, a CMOS circuit in which these are complementarily combined, and the like are formed in the driver circuit 20b provided around the pixel portion. Here, transparent oxide conductive films (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three An example is shown in which the anode 23 made of —ZnO), zinc oxide (ZnO), etc. is formed in a matrix, and then a wiring connected to the active layer of the TFT is formed. Next, an insulating film 24 made of an inorganic insulating material or an organic insulating material that covers the end of the anode 23 is formed.
[0052]
Next, as shown in FIG. 2B, an organic compound layer (EL layer) for forming an EL element is formed.
[0053]
First, the anode 23 is cleaned as a pretreatment. As the cleaning of the anode surface, ultraviolet irradiation in a vacuum or oxygen plasma treatment is performed to clean the anode surface. In addition, the oxidation treatment may be performed by irradiating ultraviolet rays in an atmosphere containing oxygen while heating at 100 to 120 ° C., and is effective when the anode is an oxide such as ITO. The heat treatment may be performed at a heating temperature of 50 ° C. or higher, preferably 65 to 150 ° C. that the substrate can withstand in vacuum, and is formed on the substrate by impurities such as oxygen and moisture attached to the substrate. Impurities such as oxygen and moisture in the film are removed. In particular, since the EL material is easily deteriorated by impurities such as oxygen and water, it is effective to heat in vacuum before vapor deposition.
[0054]
Next, the film is transferred to a film formation chamber which is the film formation apparatus shown in FIG. 1 without being exposed to the atmosphere, and a hole transport layer, a hole injection layer, or a light emitting layer which is one layer of an organic compound layer is formed on the anode 23. And the like are appropriately laminated. Here, vapor deposition is performed by heating a vapor deposition source provided in a film formation chamber which is the film formation apparatus illustrated in FIG. 1, and a hole injection layer 25, a light emitting layer (R) 26, and a light emitting layer (G) 27. And a light emitting layer (B) 28 are formed. The light emitting layer (R) is a light emitting layer that emits red light, the light emitting layer (G) is a light emitting layer that emits green light, and the light emitting layer (B) is a light emitting layer that emits blue light. By performing vapor deposition using the film formation apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0055]
Next, the cathode 29 is formed. The film formation chamber shown in FIG. 1 may be used for forming the cathode 29. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the thickness uniformity of the cathode, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0056]
As a material used for the cathode 29, it is preferable to use a metal having a small work function (typically, a metal element belonging to Group 1 or 2 of the periodic table) or an alloy containing these metals. The smaller the work function is, the better the light emission efficiency is. Therefore, among them, the material used for the cathode is preferably an alloy material containing Li (lithium), which is one of alkali metals. Note that the cathode also functions as a wiring common to all the pixels, and has a terminal electrode in the input terminal portion via the connection wiring.
[0057]
Next, the organic light-emitting element is completely blocked from the outside by enclosing with a protective film, a sealing substrate, or a sealing can, and a substance that promotes deterioration due to oxidation of the EL layer such as moisture or oxygen enters from the outside. It is preferable to prevent this. A desiccant may be installed.
[0058]
Next, an FPC (flexible printed circuit) is attached to each electrode of the input / output terminal portion with an anisotropic conductive material. The anisotropic conductive material is composed of resin and conductive particles having a diameter of several tens to several hundreds μm whose surface is plated with Au or the like, and is formed on each electrode and FPC of the input / output terminal portion by the conductive particles. Electrical connection with wiring.
[0059]
If necessary, an optical film such as a circularly polarizing plate composed of a polarizing plate and a retardation plate may be provided, or an IC chip or the like may be mounted.
[0060]
Through the above steps, a module type active matrix light emitting device to which an FPC is connected is completed.
[0061]
In this example, the anode is a transparent conductive film, and the anode, the organic compound layer, and the cathode are stacked in this order. However, the present invention is not limited to this stacked structure, and the cathode, the organic compound layer, and the anode are stacked. Alternatively, the anode may be a metal layer and the anode, the organic compound layer, and the light-transmitting cathode may be stacked in this order.
[0062]
Although the example of the top gate type TFT is shown here as the TFT structure, the present invention can be applied regardless of the TFT structure. For example, a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT is applicable. It is possible to apply to.
[0063]
[Example 2]
FIG. 3 is a diagram illustrating an appearance of a top view of the EL module. A substrate (also referred to as a TFT substrate) 35 provided with innumerable TFTs includes a pixel portion 30 on which display is performed, drive circuits 31a and 31b for driving each pixel of the pixel portion, and a cathode provided on the EL layer. A connection portion for connecting the lead wiring and a terminal portion 32 for attaching an FPC for connection to an external circuit are provided. Further, the EL element is sealed with a substrate for sealing the EL element and a sealing material 34.
[0064]
Note that the cross section of the pixel portion in FIG. 3 is not particularly limited; here, the cross-sectional view in FIG. 2B is taken as an example, and a protective film or a sealing substrate is bonded to the cross-sectional structure in FIG. After the sealing step.
[0065]
An insulating film is provided on the substrate, and a pixel portion and a drive circuit are formed above the insulating film. The pixel portion includes a plurality of pixels including a current control TFT and a pixel electrode electrically connected to its drain. It is formed by. The driver circuit is formed using a CMOS circuit in which an n-channel TFT and a p-channel TFT are combined.
[0066]
These TFTs may be formed using a known technique.
[0067]
The pixel electrode functions as an anode of a light emitting element (organic light emitting element). In addition, an insulating film called a bank is formed on both ends of the pixel electrode, and an organic compound layer and a cathode of the light emitting element are formed on the pixel electrode.
[0068]
The cathode also functions as a wiring common to all pixels, and is electrically connected to a terminal portion connected to the FPC via a connection wiring. Further, all elements included in the pixel portion and the driving circuit are covered with a cathode and a protective film. Furthermore, you may bond together with a cover material (board | substrate for sealing) and an adhesive agent. The cover material may be provided with a recess and a desiccant may be installed.
[0069]
In addition, this embodiment can be freely combined with the embodiment mode.
[0070]
[Example 3]
In the first embodiment, an example in which a top gate TFT (specifically, a planar TFT) is manufactured as the TFT 22 is shown. However, in this embodiment, a TFT 42 is used instead of the TFT 22. The TFT 42 used in this embodiment is a bottom gate TFT (specifically, an inverted staggered TFT) and may be formed by a known manufacturing process.
[0071]
First, as shown in FIG. 4A, a bottom gate TFT 42 is formed over a substrate 41 having an insulating surface by a known manufacturing process. Here, after forming the TFT, anodes 43 made of a metal layer (a conductive material containing one or more elements selected from Pt, Cr, W, Ni, Zn, Sn, and In) are arranged in a matrix. An example is shown.
[0072]
Next, an insulating film 44 made of an inorganic insulating material or an organic insulating material that covers the end of the anode 43 is formed.
[0073]
Next, as shown in FIG. 4B, an organic compound layer (EL layer) for forming an EL element is formed. The film is transported to a film formation chamber equipped with a vapor deposition source, and a hole transport layer, a hole injection layer, a light emitting layer, or the like which is one layer of an organic compound layer is appropriately stacked on the anode 43. Here, vapor deposition is performed with the film forming apparatus shown in FIG. 1 to form the hole injection layer 45, the light emitting layer (R) 46, the light emitting layer (G) 47, and the light emitting layer (B) 48. By performing vapor deposition using the film formation apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0074]
Next, the lower layer cathode 49a is formed by the film forming apparatus shown in FIG. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the cathode 49a, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved. The lower cathode 49a is a very thin metal film (an alloy such as MgAg, MgIn, AlLi, CaN, or a film formed by co-evaporation with an element belonging to Group 1 or 2 of the periodic table and aluminum), or It is preferable to use a laminate of them.
[0075]
Next, an electrode 49b is formed on the cathode 49a. (FIG. 4C) The electrode 49b is made of a transparent oxide conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O _Three -ZnO), zinc oxide (ZnO) or the like may be used. The stacked structure in FIG. 4C is a case where light is emitted in the direction of the arrow in the drawing (when light emission is allowed to pass through the cathode); therefore, a light-transmitting conductive material is used as the electrode including the cathode. preferable.
[0076]
The subsequent steps are the same as the method for manufacturing the module-type active matrix light-emitting device described in Embodiment 1, and thus are omitted here.
[0077]
In addition, this embodiment can be freely combined with any of Embodiment Mode, Embodiment 1, and Embodiment 2.
[0078]
[Example 4]
In this embodiment, FIG. 5 shows an example of a multi-chamber manufacturing apparatus in which the production up to the upper electrode is fully automated.
[0079]
5, 100a to 100k, 100m to 100u are gates, 101 is a preparation chamber, 119 is an extraction chamber, 102, 104a, 108, 114 and 118 are transfer chambers, 105, 107 and 111 are delivery chambers, 106R and 106B, 106G, 109, 110, 112 and 113 are film forming chambers, 103 is a pretreatment chamber, 117 is a sealing substrate loading chamber, 115 is a dispenser chamber, 116 is a sealing chamber, 120a and 120b are cassette chambers, and 121 is a tray. It is a stage.
[0080]
Hereinafter, a procedure in which the substrate on which the TFT 22 and the anode 23 are provided in advance is carried into the manufacturing apparatus shown in FIG. 5 to form the laminated structure shown in FIG.
[0081]
First, the substrate provided with the TFT and the anode 23 is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 120b, and when it is a normal substrate (for example, 127 mm × 127 mm), it is transferred to the tray mounting stage 121 and the tray (for example, 300 mm) Several boards are mounted on (360 mm).
[0082]
Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101.
[0083]
The charging chamber 101 is connected to a vacuum evacuation treatment chamber, and after evacuating, it is preferable to introduce an inert gas to an atmospheric pressure. Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. In advance, the vacuum is maintained by evacuation so that moisture and oxygen do not exist in the transfer chamber as much as possible.
[0084]
Further, the transfer chamber 102 is connected to an evacuation processing chamber that evacuates the transfer chamber. As the vacuum evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is provided. As a result, the ultimate vacuum in the transfer chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0085]
Further, in order to remove moisture and other gases contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, and the substrate is transferred to a pretreatment chamber 103 connected to the transfer chamber 102, where annealing is performed. Just do it. Further, if it is necessary to clean the surface of the anode, it may be transferred to a pretreatment chamber 103 connected to the transfer chamber 102 and cleaned there.
[0086]
Further, an organic compound layer made of a polymer may be formed on the entire surface on the anode. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. In this embodiment, an example in which a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that functions as the hole injection layer 25 is formed on the entire surface is shown. In the case where an organic compound layer is formed in the film formation chamber 112 by a spin coating method, an ink jet method, or a spray method, the film formation surface of the substrate is set facing upward at atmospheric pressure. In this embodiment, the delivery chamber 105 is provided with a substrate reversing mechanism, and the substrate is reversed appropriately. After film formation using an aqueous solution, it is preferable that the film be transferred to the pretreatment chamber 103 where heat treatment is performed in a vacuum to vaporize moisture. In addition, although the example which forms the hole injection layer 25 which consists of a polymer was shown in the present Example, the hole injection layer which consists of a low molecular organic material may be formed by vapor deposition by a resistance heating method, and a hole is formed. The injection layer 25 is not necessarily provided.
[0087]
Next, the substrate 104c is transferred from the transfer chamber 102 to the delivery chamber 105 without being exposed to the atmosphere, and then the substrate 104c is transferred to the transfer chamber 104 and transferred to the film formation chamber 106R by the transfer mechanism 104b. The EL layer 26 that emits red light is appropriately formed. Here, it is formed by vapor deposition using resistance heating. The film formation chamber 106R is set with the film formation surface of the substrate facing downward in the delivery chamber 105. Note that the film formation chamber is preferably evacuated before the substrate is carried in.
[0088]
For example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Deposition is performed in the film forming chamber 106R evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening a shutter (not shown) at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening (not shown) provided in a metal mask (not shown).
[0089]
In this embodiment, film formation is performed using the film formation apparatus shown in FIG. By performing vapor deposition using the film formation apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0090]
Here, in order to obtain a full color, after the film formation in the film formation chamber 106R, the film formation is sequentially performed in each of the film formation chambers 106G and 106B, and the organic compound layers 26 to 28 exhibiting red, green, and blue light emission. Is formed as appropriate.
[0091]
Once the hole injection layer 25 and the desired EL layers 26 to 28 are obtained on the anode 23, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and then further exposed to the atmosphere. Without transferring, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0092]
Next, the film is transferred to the film forming chamber 110 by a transfer mechanism installed in the transfer chamber 108, and the cathode 29 made of a metal layer is appropriately formed by a vapor deposition method using resistance heating. Here, the film formation chamber 110 is a vapor deposition apparatus that includes Li and Al as a vapor deposition source and performs vapor deposition by resistance heating.
[0093]
Through the above process, the light-emitting element having the stacked structure illustrated in FIG. 2B is formed.
[0094]
Next, the film is transferred from the transfer chamber 108 to the deposition chamber 113 without being exposed to the air, and a protective film formed of a silicon nitride film or a silicon nitride oxide film is formed. Here, a sputtering apparatus provided with a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride in the film formation chamber 113 is used. For example, a silicon nitride film can be formed by using a target made of silicon and setting a film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0095]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 108 to the delivery chamber 111 without being exposed to the atmosphere, and further transferred from the delivery chamber 111 to the transfer chamber 114.
[0096]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. Note that a sealing substrate provided with a sealant is preferably prepared in the sealing chamber 116.
[0097]
The sealing substrate is set in the sealing substrate load chamber 117 from the outside. In order to remove impurities such as moisture, it is preferable to perform annealing in a vacuum in advance, for example, annealing in the sealing substrate load chamber 117. In the case of forming a sealing material on the sealing substrate, after the transfer chamber 108 is set to atmospheric pressure, the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115, and the substrate provided with the light emitting element. And a sealing substrate on which the sealing material is formed is transported to the sealing chamber 116.
[0098]
Next, in order to deaerate the substrate provided with the light-emitting element, after annealing in a vacuum or an inert atmosphere, the sealing substrate provided with the sealant and the substrate on which the light-emitting element is formed are attached to each other . Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0099]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealing material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0100]
Next, the pair of bonded substrates is transferred from the sealing chamber 116 to the transfer chamber 114 and then transferred from the transfer chamber 114 to the take-out chamber 119 and taken out.
[0101]
As described above, by using the manufacturing apparatus illustrated in FIG. 5, it is not necessary to expose the light-emitting element to the outside until the light-emitting element is completely enclosed in the sealed space, and thus a highly reliable light-emitting device can be manufactured. Note that in the transfer chamber 114, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 are always kept in vacuum.
[0102]
Note that an in-line film deposition apparatus can also be used.
[0103]
Hereinafter, a procedure in which a substrate on which a TFT and an anode are provided in advance is carried into the manufacturing apparatus shown in FIG. 5 to form a stacked structure shown in FIG.
[0104]
First, as in the case of forming the stacked structure of FIG. 2A, a substrate provided with TFTs and an anode 43 is set in the cassette chamber 120a or the cassette chamber 120b.
[0105]
Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101. Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101.
[0106]
Further, in order to remove moisture and other gases contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, and the substrate is transferred to a pretreatment chamber 103 connected to the transfer chamber 102, where annealing is performed. Just do it. Further, if it is necessary to clean the surface of the anode, it may be transferred to a pretreatment chamber 103 connected to the transfer chamber 102 and cleaned there.
[0107]
Further, an organic compound layer made of a polymer may be formed on the entire surface on the anode. The film formation chamber 112 is a film formation chamber for forming an organic compound layer made of a polymer. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as the hole injection layer 45 may be formed on the entire surface. In the case where an organic compound layer is formed in the film formation chamber 112 by a spin coating method, an ink jet method, or a spray method, the film formation surface of the substrate is set facing upward at atmospheric pressure. The delivery chamber 105 is provided with a substrate reversing mechanism, and the substrate is reversed appropriately. In addition, after film formation using an aqueous solution, the film is preferably transferred to the pretreatment chamber 103 where heat treatment is performed in vacuum to vaporize moisture.
[0108]
Next, after the substrate 104c is transferred from the transfer chamber 102 to the delivery chamber 105 without being exposed to the atmosphere, the substrate 104c is transferred to the transfer chamber 104, and is transferred to the film formation chamber 106R by the transfer mechanism 104b. An EL layer 46 that emits red light is appropriately formed. Here, it is formed by vapor deposition using the film forming apparatus of FIG. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0109]
Here, in order to obtain a full color, after the film formation in the film formation chamber 106R, the film formation is sequentially performed in each of the film formation chambers 106G and 106B, and the organic compound layers 46 to 48 that emit red, green, and blue light. Are formed as appropriate.
[0110]
Once the hole injection layer 45 and the desired EL layers 46 to 48 are obtained on the anode 43, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and then further exposed to the atmosphere. Without transferring, the substrate is transferred from the delivery chamber 107 to the transfer chamber 108.
[0111]
Next, the film is transferred to the film forming chamber 110 by a transfer mechanism installed in the transfer chamber 108, and is formed into a very thin metal film (an alloy such as MgAg, MgIn, AlLi, CaN, or the first or second group of the periodic table). A cathode (lower layer) 49a made of a film formed by co-evaporation of an element and aluminum is formed by the film forming apparatus shown in FIG. After forming a cathode (lower layer) 49a made of a thin metal layer, it is transported to the film forming chamber 109 and is formed by a sputtering method with a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three An electrode (upper layer) 49b made of —ZnO), zinc oxide (ZnO), etc. is formed, and electrodes 49a, 49b made of a laminate of a thin metal layer and a transparent conductive film are appropriately formed.
[0112]
Through the above process, the light-emitting element having the stacked structure illustrated in FIG. 4C is formed. The light-emitting element having a stacked structure illustrated in FIG. 4C has a light-emitting direction indicated by an arrow in the drawing, and is opposite to the light-emitting element in FIG.
[0113]
The subsequent steps are the same as the manufacturing procedure of the light-emitting device having the stacked structure shown in FIG.
[0114]
As described above, if the manufacturing apparatus shown in FIG. 5 is used, the stacked structure shown in FIGS. 2B and 4C can be separately formed. Further, by performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.
[0115]
In addition, this embodiment can be freely combined with any of the embodiment mode and Embodiments 1 to 3.
[0116]
[Example 5]
FIG. 7 shows an explanatory diagram of the manufacturing system of this embodiment.
[0117]
In FIG. 7, 61a is a first container (crucible), and 61b is a second container for isolating the first container from the atmosphere and preventing it from contamination. Reference numeral 62 denotes a powdered EL material purified to a high purity. Reference numeral 63 denotes a vacuum chamber, 64 is a heating means, 65 is an object to be deposited, and 66 is a deposited film. In addition, 68 is a material manufacturer, a manufacturer (typically a raw material handling company) that produces and refines organic compound materials that are vapor deposition materials, 69 is a light emitting device manufacturer having a vapor deposition device, A manufacturer of light emitting devices (typically a production factory).
[0118]
The flow of the manufacturing system of the present embodiment will be described below.
[0119]
First, an order 60 is made from the light emitting device manufacturer 69 to the material manufacturer 68. The material manufacturer 68 prepares the first container and the second container according to the order 60. Then, the material maker purifies or stores the ultra-high purity EL material 62 in the first container 61a while paying sufficient attention to the mixing of impurities (oxygen, moisture, etc.) in the clean room environment. Thereafter, the material maker 68 preferably seals the first container 61a with the second container 61b so that excessive impurities do not adhere to the inside or outside of the first container in the clean room environment. When sealing, the inside of the second container 61b is preferably filled with vacuum or an inert gas. It is preferable to clean the first container 61a and the second container 61b before purifying or storing the ultra-high purity EL material 62.
[0120]
In the present embodiment, the first container 61a is installed in the chamber as it is when vapor deposition is performed later. In addition, the second container 61b may be a packaging film having a barrier property that blocks the mixing of oxygen and moisture, but in order to enable automatic removal, a cylindrical or box-like strong light-shielding property is provided. It is preferable to use a container having
[0121]
Next, the first container 61a is conveyed 67 from the material maker 68 to the light emitting device maker 69 in a state where the first container 61a is still sealed in the second container 61b.
[0122]
Next, the first container 61a is introduced into the processing chamber 63 capable of being evacuated while being sealed in the second container 61b. The processing chamber 63 is a vapor deposition chamber in which a heating unit 64 and a substrate holder (not shown) are installed. Thereafter, the inside of the processing chamber 63 is evacuated to a clean state in which oxygen and moisture are reduced as much as possible. Then, the first container 61a is taken out from the second container 61b, and the heating means 64 is supplied without breaking the vacuum. A vapor deposition source can be prepared by installing. Note that an evaporation target (here, a substrate) 65 is provided so as to face the first container 61a.
[0123]
Next, the vapor deposition material 66 can be formed on the surface of the deposition target 65 provided opposite to the vapor deposition source by applying heat to the vapor deposition material by a heating means 64 such as resistance heating. The vapor deposition film 66 thus obtained does not contain impurities, and when a light emitting element is completed using the vapor deposition film 66, high reliability and high luminance can be realized.
[0124]
In this way, the first container 61a is introduced into the vapor deposition chamber 63 without being exposed to the atmosphere, and vapor deposition can be performed while maintaining the purity at the stage where the vapor deposition material 62 is stored by the material manufacturer. In addition, by storing the EL material 62 directly in the first container 61a by the material manufacturer, only a necessary amount can be provided to the light emitting device manufacturer, and a relatively expensive EL material can be used efficiently.
[0125]
In the conventional vapor deposition method by resistance heating, there is a method of increasing the use efficiency as shown below, for example, because the use efficiency of the material is low. After the first deposition with a new EL material in the crucible during the maintenance of the deposition apparatus, a residue remains without being deposited. Then, the next time vapor deposition is performed, the EL material is newly replenished on the residue and vapor deposition is performed, and the subsequent vapor deposition can increase the use efficiency by repeating the above replenishment until maintenance is performed. In the method, residues can cause contamination. Further, since replenishment is performed by an operator, oxygen or moisture may be mixed into the vapor deposition material and the purity may be lowered. Also, crucibles deposited several times are discarded during maintenance. In order to prevent contamination of impurities, a new EL material may be put into the crucible every time vapor deposition is performed, and the crucible may be abandoned every time vapor deposition is performed, but the manufacturing cost increases.
[0126]
Conventionally, the glass bottle storing the vapor deposition material can be eliminated, and further, the operation of transferring from the glass bottle to the crucible by the above-described manufacturing system can be eliminated, and contamination with impurities can be prevented. In addition, throughput is improved.
[0127]
According to the present embodiment, it is possible to realize a manufacturing system that is fully automated to improve throughput, and that it is possible to realize a consistent closed system that can avoid contamination of the vapor deposition material 62 purified by the material manufacturer 68. Become.
[0128]
In the above description, the EL material is described as an example. However, in this embodiment, the metal layer serving as the cathode and the anode can also be deposited by resistance heating. If the cathode is formed by a resistance heating method, an EL element can be formed without changing the electrical characteristics (on current, off current, Vth, S value, etc.) of the TFT 22.
[0129]
Similarly, the metal material may be stored in advance in the first container, and the first container may be directly introduced into the vapor deposition apparatus and evaporated by resistance heating to form a vapor deposition film. .
[0130]
In addition, this embodiment can be freely combined with any of the embodiment modes and Embodiments 1 to 4.
[0131]
[Example 6]
In this embodiment, the form of the container to be conveyed will be specifically described with reference to FIG. The second container divided into an upper part (721a) and a lower part (721b) used for conveyance is for fixing the first container provided on the upper part of the second container, and pressurizing the fixing means. Spring 705, a gas inlet 708 serving as a gas path for holding the second container provided under the second container under reduced pressure, an O-ring for fixing the upper container 721a and the lower container 721b, Tool 702. In the second container, a first container 701 in which a purified vapor deposition material is enclosed is installed. Note that the second container is preferably formed using a material containing stainless steel, and the first container 701 is preferably formed using a material containing titanium.
[0132]
In the material manufacturer, the purified deposition material is sealed in the first container 701. Then, the second container upper part 721a and the lower part 721b are aligned via an O-ring, and the upper container 721a and the lower container 721b are fixed with a fastener 702, and the first container 701 is sealed in the second container. . Thereafter, the inside of the second container is depressurized via the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 701 is fixed by the fixing means 706. In addition, you may install a desiccant in a 2nd container. When the inside of the second container is maintained in a vacuum, reduced pressure, or nitrogen atmosphere in this manner, even a slight amount of oxygen or water attached to the vapor deposition material can be prevented.
[0133]
In this state, the first container 701 is transported to the light emitting device manufacturer and installed in the vapor deposition chamber. Thereafter, the vapor deposition material is sublimated by heating, and a vapor deposition film is formed.
[0134]
In addition, it is preferable that other components such as a film thickness monitor (such as a crystal resonator), a shutter, and the like are similarly transported without being exposed to the atmosphere and installed in the vapor deposition apparatus.
[0135]
Further, in this embodiment, an installation chamber for taking out a crucible (filled with a deposition material) vacuum-sealed in the container without touching the atmosphere from the container and setting the crucible in the deposition holder is a film formation chamber. The crucible is transferred from the installation room by the transfer robot without being exposed to the atmosphere. It is preferable to provide a vacuum evacuation unit in the installation chamber and also provide a unit for heating the crucible.
[0136]
8A and 8B, a mechanism for installing the first container 701 sealed in the second containers 721a and 721b in the film formation chamber will be described.
[0137]
FIG. 8A shows an installation room having a turntable 713 on which the second containers 721a and 721b in which the first containers are stored, a transport mechanism for transporting the first container, and a lifting mechanism 711. The cross section of is described. The installation chamber is disposed adjacent to the film formation chamber, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet. In addition, the conveyance mechanism of a present Example is limited to the structure which pinches | interposes (pinch) and conveys the 1st container from the upper direction of the 1st container 701, as described in FIG.8 (B). Instead, it may be configured to convey the side surface of the first container.
[0138]
In such an installation room, the second container is placed on the rotary installation base 713 with the fastener 702 removed. Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed. Next, the inside of the installation chamber is depressurized by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper portion 721a of the second container is removed by the lifting mechanism 711, and the rotary installation base 713 rotates around the rotation shaft 712 to move the lower portion of the second container and the first container. Then, the first container 701 is transported to the vapor deposition chamber by the transport mechanism, and the first container 701 is installed in a vapor deposition source holder (not shown).
[0139]
Thereafter, the vapor deposition material is sublimated by the heating means provided in the vapor deposition source holder, and film formation is started. When a shutter (not shown) provided on the evaporation source holder is opened during the film formation, the sublimated evaporation material is scattered in the direction of the substrate and is evaporated onto the substrate, and the light emitting layer (hole transport layer, hole injection layer) , Including an electron transport layer and an electron injection layer).
[0140]
After the vapor deposition is completed, the first container is lifted from the vapor deposition source holder, conveyed to the installation chamber, and placed on the lower container (not shown) of the second container installed on the turntable 713, and the upper container Sealed by 721a. At this time, it is preferable that the first container, the upper container, and the lower container are sealed with the transported combination. In this state, the installation chamber 805 is set to atmospheric pressure, the second container is taken out of the installation chamber, the fastener 702 is fixed, and the material is conveyed to the material manufacturer.
[0141]
FIG. 9 shows an example of an installation room in which a plurality of first containers 911 can be installed. 9A, in the installation chamber 905, a turntable 907 on which a plurality of first containers 911 or second containers 912 can be placed, a transport mechanism 902b for transporting the first container, and a lift The film formation chamber 906 includes a vapor deposition source holder 903 and a mechanism (not shown here) for moving the vapor deposition holder. FIG. 9A shows a top view, and FIG. 9B shows a perspective view of the installation chamber. The installation chamber 905 is disposed adjacent to the film formation chamber 906 via the gate valve 900, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet. Although not shown, a place where the removed upper part (second container) 912 is arranged is provided separately.
[0142]
Alternatively, a robot may be provided in a pretreatment chamber (installation chamber) connected to the film formation chamber, and the evaporation source may be moved from the film formation chamber to the pretreatment chamber, and the vapor deposition material may be set in the vapor deposition source in the pretreatment chamber. That is, it is good also as a manufacturing apparatus which a vapor deposition source moves to a pre-processing chamber. By doing so, the vapor deposition source can be set while maintaining the cleanliness of the film forming chamber.
[0143]
In addition, this embodiment can be freely combined with any one of the embodiment mode and Embodiments 1 to 5.
[0144]
[Example 7]
In this embodiment, FIG. 10 shows an example of a multi-chamber manufacturing apparatus in which the production from the first electrode to the sealing is fully automated.
[0145]
FIG. 10 shows gates 500a to 500y, transfer chambers 502, 504a, 508, 514, 518, delivery chambers 505, 507, 511, preparation chamber 501, first film formation chamber 506H, and second film formation chamber. 506B, a third film formation chamber 506G, a fourth film formation chamber 506R, a fifth film formation chamber 506E, other film formation chambers 509, 510, 512, 513, 531, 532, and an installation for installing a vapor deposition source. Chambers 526R, 526G, 526B, 526E, 526H, pretreatment chambers 503a, 503b, sealing chamber 516, mask stock chamber 524, sealing substrate stock chamber 530, cassette chambers 520a, 520b, tray mounting stage 521 is a multi-chamber manufacturing apparatus including an extraction chamber 519 and an extraction chamber 519. Note that a transfer mechanism 504b for transferring the substrate 504c is provided in the transfer chamber 504a, and each of the other transfer chambers is also provided with a transfer mechanism.
[0146]
Hereinafter, a procedure for manufacturing a light-emitting device by carrying a substrate provided with an anode (first electrode) and an insulator (partition wall) covering an end of the anode in advance into the manufacturing apparatus shown in FIG. 10 will be described. Note that in the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (current control TFTs) and other thin film transistors (such as switching TFTs) connected to an anode are provided in advance on a substrate, and are formed of thin film transistors. A drive circuit is also provided. In addition, when a simple matrix light-emitting device is manufactured, the manufacturing apparatus illustrated in FIG. 10 can be used.
[0147]
First, the substrate is set in the cassette chamber 520a or the cassette chamber 520b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 520b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), it is set in the cassette chamber 520a and then transferred to the tray mounting stage 521. Then, a plurality of substrates are set on a tray (for example, 300 mm × 360 mm).
[0148]
The substrate set in the cassette chamber (a substrate provided with an anode and an insulator covering the end of the anode) is transferred to the transfer chamber 518.
[0149]
In addition, before setting in the cassette chamber, a porous sponge (typically, a surfactant (weakly alkaline) is added to the surface of the first electrode (anode) to reduce point defects. It is preferable to remove dust on the surface by washing with PVA (polyvinyl alcohol), nylon, or the like. As a cleaning mechanism, a cleaning device having a roll brush (manufactured by PVA) that rotates around an axis parallel to the surface of the substrate and contacts the surface of the substrate may be used, or may rotate around an axis perpendicular to the surface of the substrate. You may use the washing | cleaning apparatus which has a disk brush (product made from PVA) which contacts the surface of a board | substrate while moving. In order to remove moisture and other gases contained in the substrate before forming a film containing an organic compound, annealing for deaeration is preferably performed in a vacuum, and is connected to the transfer chamber 518. Then, it may be transferred to the baking chamber 523 and annealed there.
[0150]
Next, the substrate is transferred from the transfer chamber 518 provided with the substrate transfer mechanism to the preparation chamber 501. In the manufacturing apparatus of this embodiment, the robot provided in the transfer chamber 518 can reverse the front and back of the substrate, and can carry it over into the preparation chamber 501. In this embodiment, the atmospheric pressure is always maintained in the transfer chamber 518. The charging chamber 501 is connected to an evacuation treatment chamber, and after evacuation, it is preferable to introduce an inert gas and set it to atmospheric pressure.
[0151]
Next, the material is transferred to a transfer chamber 502 connected to the preparation chamber 501. It is preferable to evacuate and maintain the vacuum in advance so that moisture and oxygen do not exist in the transfer chamber 502 as much as possible.
[0152]
The vacuum evacuation chamber is provided with a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to the preparation chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0153]
In addition, when it is desired to remove a film containing an organic compound formed in an unnecessary place, the film may be transferred to the pretreatment chamber 503a and the organic compound film stack may be selectively removed. The pretreatment chamber 503a has plasma generating means, and performs dry etching by exciting one or more kinds of gases selected from Ar, H, F, and O to generate plasma. By using the mask, only unnecessary portions can be selectively removed. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 503a so that ultraviolet irradiation can be performed as the anode surface treatment.
[0154]
In order to eliminate shrinkage, it is preferable to perform vacuum heating immediately before deposition of a film containing an organic compound. The film is transferred to the pretreatment chamber 503b to thoroughly remove moisture and other gases contained in the substrate. In order to perform the deaeration annealing, vacuum (5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Pa). In the pretreatment chamber 503b, a plurality of substrates are uniformly heated using a flat plate heater (typically a sheath heater). A plurality of the flat plate heaters are installed, and can be heated from both sides so that the substrate is sandwiched by the flat plate heaters. Of course, the flat plate heaters can also be heated from one side. In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, depending on the organic resin material, moisture may be easily adsorbed and degassing may occur. Therefore, before forming a layer containing an organic compound, It is effective to perform vacuum heating for removing adsorbed moisture by performing natural cooling for 30 minutes after heating for 100 minutes to 100 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more.
[0155]
Next, after performing the vacuum heating, the substrate is transferred from the transfer chamber 502 to the delivery chamber 505, and further, the substrate is transferred from the transfer chamber 505 to the transfer chamber 504a without being exposed to the atmosphere.
[0156]
Thereafter, the substrate is appropriately transferred to the film formation chambers 506R, 506G, 506B, and 506E connected to the transfer chamber 504a, and a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer An organic compound layer made of a low molecule is appropriately formed. Alternatively, the substrate can be transferred from the transfer chamber 102 to the film formation chamber 506H to perform evaporation.
[0157]
In the deposition chamber 512, a hole injection layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like under atmospheric pressure or reduced pressure. Alternatively, the film may be formed by an inkjet method in a vacuum with the substrate placed vertically. A poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), polyaniline / camphorsulfonic acid aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) PANI / CSA), PTPDES, Et-PTPDK, PPBA, or the like may be applied to the entire surface and fired. When firing, it is preferably performed in the baking chamber 523. When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, flatness is improved, and coverage and film thickness uniformity of a film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately after forming the hole injection layer by a coating method and immediately before film formation by the vapor deposition method. What is necessary is just to perform in the pre-processing chamber 503b when heating in a vacuum. For example, after the surface of the first electrode (anode) is cleaned with a sponge, it is carried into a cassette chamber, conveyed to a film formation chamber 512, and poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) by spin coating. An aqueous solution (PEDOT / PSS) is applied to the entire surface with a film thickness of 60 nm, then transferred to the baking chamber 523, pre-baked at 80 ° C. for 10 minutes, main-baked at 200 ° C. for 1 hour, and further transferred to the pretreatment chamber 503b. Then, after vacuum heating (170 ° C., heating for 30 minutes, cooling for 30 minutes) immediately before vapor deposition, the light emitting layer may be formed by vapor deposition without being exposed to the atmosphere by being transported to the film formation chambers 506R, 506G, and 506B. . In particular, when an ITO film is used as an anode material and there are irregularities and fine particles on the surface, these effects can be reduced by setting the PEDOT / PSS film thickness to 30 nm or more.
[0158]
Also, PEDOT / PSS has poor wettability when applied on an ITO film, so the wettability is improved by first applying the PEDOT / PSS solution by spin coating and then washing with pure water. Then, it is preferable to apply the PEDOT / PSS solution again by a spin coating method and perform baking to form a film with good uniformity. In addition, after performing the 1st application | coating, while washing | cleaning with a pure water once, while modifying the surface, the effect which can remove a microparticle etc. is acquired.
[0159]
In addition, when PEDOT / PSS is formed by spin coating, the film is formed over the entire surface, so that the end face, peripheral edge, terminal part, connection area between the cathode and lower wiring, etc. can be selectively removed. Preferably, using a mask in the pretreatment chamber 503a, O ₂ It is preferable to remove selectively by ashing or the like.
[0160]
Here, the film formation chambers 506R, 506G, 506B, 506E, and 506H will be described.
[0161]
In each of the film forming chambers 506R, 506G, 506B, 506E, and 506H, a movable vapor deposition source holder is installed. A plurality of vapor deposition source holders are prepared, and a plurality of containers (crucibles) filled with EL materials are appropriately provided, and are installed in the film forming chamber in this state. A film can be selectively formed by setting the substrate by a face-down method, aligning the position of a vapor deposition mask with a CCD or the like, and performing vapor deposition by a resistance heating method. Note that the vapor deposition mask is stocked in the mask stock chamber 524 and is appropriately transported to the film formation chamber when vapor deposition is performed. Further, since the mask stock chamber is vacant at the time of vapor deposition, it is possible to stock the substrate after film formation or processing. The film formation chamber 532 is a preliminary vapor deposition chamber for forming a layer containing an organic compound or a metal material layer.
[0162]
The EL material is preferably installed in these film formation chambers by using the following manufacturing system. That is, it is preferable to form a film using a container (typically a crucible) in which an EL material is stored in advance by a material manufacturer. Further, it is preferable that the installation is performed without touching the atmosphere. When the material is transferred from the material manufacturer, the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, the installation chambers 526R, 526G, 526B, 526H, and 526E having vacuum exhaust means connected to the respective film formation chambers 506R, 506G, 506B, 506H, and 506E are set to a vacuum or an inert gas atmosphere. Remove the crucible from the container and place the crucible in the film formation chamber. FIG. 8 or FIG. 9 shows an example of the installation room. By doing so, the crucible and the EL material accommodated in the crucible can be prevented from being contaminated. Note that a metal mask can be stocked in the installation chambers 526R, 526G, 526B, 526H, and 526E.
[0163]
By appropriately selecting an EL material to be installed in the film formation chambers 506R, 506G, 506B, 506H, and 506E, the entire light emitting element can be a single color (specifically, white) or full color (specifically, red, green, and blue). ) Can be formed. For example, in the case of forming a green light emitting element, a hole transport layer or a hole injection layer is formed in the film formation chamber 506H, a light emitting layer (G) is formed in the film formation chamber 506G, and an electron transport layer or electron injection layer is formed in the film formation chamber 506E. A green light emitting element can be obtained by forming a cathode after sequentially laminating. For example, in the case of forming a full-color light-emitting element, a vapor deposition mask for R is used in the deposition chamber 506R, and a hole transport layer or a hole injection layer, a light-emitting layer (R), an electron transport layer or an electron injection layer are sequentially stacked. Then, using a deposition mask for G in the film formation chamber 506G, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked, and the film for the B is formed in the film formation chamber 506B. A full color light emitting device can be obtained by forming a cathode after sequentially stacking a hole transport layer or hole injection layer, a light emitting layer (B), an electron transport layer or an electron injection layer using the above evaporation mask.
[0164]
The organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue, and blue / yellow or blue-green / orange in the case of stacking light-emitting layers having different emission colors. Broadly divided into two-wavelength types using complementary color relationships. It is also possible to form a white light emitting element in one film formation chamber. For example, in the case of obtaining a white light emitting element using a three-wavelength type, a film formation chamber having a plurality of vapor deposition source holders equipped with a plurality of crucibles is prepared, and an aromatic diamine (TPD) is provided in the first vapor deposition source holder. P-EtTAZ for the second deposition source holder and Alq for the third deposition source holder _Three In the fourth evaporation source holder, Alq _Three EL material added with NileRed, a red luminescent dye, and Alq for the fifth evaporation source holder _Three Is placed in each film forming chamber in this state. Then, the first to fifth vapor deposition source holders start moving in order to perform vapor deposition on the substrate and stack them. Specifically, TPD is sublimated from the first vapor deposition source holder by heating and vapor deposited on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second vapor deposition source holder, and Alq from the third vapor deposition source holder. _Three Is sublimated and Alq is removed from the fourth evaporation source holder. _Three : NileRed is sublimated, Alq from the fifth evaporation source holder _Three Is sublimated and deposited on the entire surface of the substrate. Thereafter, a white light emitting element can be obtained by forming a cathode.
[0165]
After a layer containing an organic compound is appropriately stacked by the above steps, the substrate is transferred from the transfer chamber 504a to the delivery chamber 507, and further transferred from the delivery chamber 507 to the transfer chamber 508 without being exposed to the atmosphere.
[0166]
Next, the substrate is transferred to the film formation chamber 510 by a transfer mechanism installed in the transfer chamber 508 to form a cathode. This cathode is an inorganic film (MgAg, MgIn, CaF) formed by a vapor deposition method using resistance heating. ₂ , LiF, CaN, etc., or a film formed by co-evaporation of an element belonging to Group 1 or 2 of the periodic table and aluminum, or a laminated film thereof. Moreover, you may form a cathode using a sputtering method.
[0167]
In the case of manufacturing a top emission type light emitting device, the cathode is preferably transparent or translucent, and the metal film thin film (1 nm to 10 nm) or the metal film thin film (1 nm to 10 nm) A laminate with a transparent conductive film is preferably used as the cathode. In this case, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three (ZnO), zinc oxide (ZnO), or the like) may be formed.
[0168]
Through the above process, a light-emitting element having a stacked structure is formed.
[0169]
Alternatively, the protective film may be sealed by forming a protective film made of a silicon nitride film or a silicon nitride oxide film by being transferred to the deposition chamber 513 connected to the transfer chamber 508. Here, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided in the film formation chamber 513. For example, the silicon nitride film can be formed over the cathode by using a target made of silicon and setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Further, a thin film containing carbon as a main component (DLC film, CN film, amorphous carbon film) may be formed as a protective film, or a film formation chamber using a CVD method may be provided separately. Diamond-like carbon film (also called DLC film) is formed by plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron cyclotron resonance (ECR) CVD method, hot filament CVD method, etc.), combustion flame method It can be formed by sputtering, ion beam vapor deposition, laser vapor deposition or the like. The reaction gas used for film formation includes hydrogen gas and hydrocarbon-based gas (for example, CH _Four , C ₂ H ₂ , C ₆ H ₆ And the like, and ionized by glow discharge, and the ions are accelerated and collided with a negative self-biased cathode to form a film. Also, the CN film is C as a reactive gas. ₂ H _Four Gas and N ₂ What is necessary is just to form using gas. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.
[0170]
In this embodiment, a protective layer made of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film is formed on the cathode. For example, after forming the cathode, the film is conveyed to the film formation chamber 513 to form a first inorganic insulating film, and the film is conveyed to the film formation chamber 532 to be hygroscopic and transparent by an evaporation method (organic compound). And a second inorganic insulating film may be formed again by being transported to the deposition chamber 513 again.
[0171]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 508 to the delivery chamber 511 without being exposed to the air, and further transferred from the delivery chamber 511 to the transfer chamber 514. Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 514 to the sealing chamber 516.
[0172]
The sealing substrate is prepared by being set in the load chamber 517 from the outside. Note that it is preferable to perform annealing in advance in advance in order to remove impurities such as moisture. When forming a sealing material to be bonded to a substrate provided with a light emitting element on the sealing substrate, the sealing material is formed in the sealing chamber, and the sealing substrate on which the sealing material is formed is used as the sealing substrate stock chamber. Transport to 530. Note that a desiccant may be provided on the sealing substrate in the sealing chamber. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0173]
Next, the substrate and the sealing substrate are bonded to each other in the sealing chamber 516, and the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 516 to cure the sealing material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0174]
Next, the pair of bonded substrates is transferred from the sealing chamber 516 to the transfer chamber 514 and then transferred from the transfer chamber 514 to the take-out chamber 519 and taken out.
[0175]
As described above, by using the manufacturing apparatus illustrated in FIG. 10, it is not necessary to expose the light emitting element to the atmosphere until the light emitting element is completely enclosed in the sealed space, so that a highly reliable light emitting apparatus can be manufactured. In the transfer chamber 514, the substrate is transferred at atmospheric pressure. In order to remove moisture, the vacuum and the nitrogen atmosphere at atmospheric pressure can be repeated, but the transfer chambers 502 and 504a can be repeated. , 508, it is desirable that the vacuum is always maintained. Further, the transfer chamber 518 is always at atmospheric pressure.
[0176]
Although not shown here, a control device for controlling work in each processing chamber, a control device for transferring between the processing chambers, and a path for moving the substrate to each processing chamber are controlled. A control device that realizes automation is provided.
[0177]
Moreover, in the manufacturing apparatus shown in FIG. 10, after carrying in the board | substrate with which the transparent conductive film (or metal film (TiN) was provided as an anode, and forming the layer containing an organic compound, a transparent or translucent cathode (for example, A top emission (or double emission) light emitting element can be formed by forming a thin metal film (a laminate of Al, Ag) and a transparent conductive film). Indicates an element that transmits light emitted from the organic compound layer through the cathode.
[0178]
Moreover, in the manufacturing apparatus shown in FIG. 10, after carrying in the board | substrate with which the transparent conductive film was provided as an anode and forming the layer containing an organic compound, by forming the cathode which consists of a metal film (Al, Ag), It is also possible to form a bottom emission type light emitting element. Note that a bottom emission light-emitting element refers to an element that extracts light generated in an organic compound layer from an anode, which is a transparent electrode, toward a TFT and further passes through a substrate.
[0179]
In addition, this embodiment can be freely combined with the embodiment mode, Embodiment 1, Embodiment 2, Embodiment 3, Embodiment 5, or Embodiment 6.
[0180]
【The invention's effect】
By performing vapor deposition using the film formation apparatus of the present invention, film thickness uniformity, utilization efficiency of vapor deposition material, and throughput can be significantly improved.
[Brief description of the drawings]
FIG. 1 is a diagram showing a first embodiment.
2 is a cross-sectional view showing Example 1. FIG.
FIG. 3 is a top view of a light emitting device.
4 is a cross-sectional view showing Example 3. FIG.
FIG. 5 shows a multi-chamber manufacturing apparatus. Example 4
FIG. 6 is a diagram illustrating an example of moving a deposition source holder.
7 is a diagram showing Example 5. FIG.
FIG. 8 is a diagram showing crucible conveyance in an installation room.
FIG. 9 is a diagram showing crucible conveyance to a vapor deposition source holder in an installation chamber.
FIG. 10 shows a multi-chamber manufacturing apparatus. (Example 7)

Claims (9)

A manufacturing apparatus having a film formation chamber,
The film formation chamber in which the deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, Means for rotating the deposit,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance of the deposition source and the evaporation object may state, and are less 30 cm,
An apparatus for performing deposition by moving the deposition source holder and rotating the deposition object. A manufacturing apparatus having a film formation chamber,
The film formation chamber in which the deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, Means for rotating the deposit,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance of the deposition source and the evaporation object may state, and are less 30 cm,
An apparatus for performing deposition by moving the deposition source holder in a zigzag manner and rotating the deposition target. A manufacturing apparatus having a film formation chamber,
The film formation chamber in which the deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, Means for rotating the deposit,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance of the deposition source and the evaporation object may state, and are less 30 cm,
An apparatus for performing deposition by moving the deposition source holder so as to draw an arc in a two-dimensional plane and rotating the deposition target. In any one of claims 1 to 3, wherein the film forming chamber, manufacturing apparatus characterized by evacuating the processing chamber to the deposition chamber in a vacuum are linked. In any one of claims 1 to 4, a manufacturing apparatus, wherein the deposition material is an organic compound material. A film forming chamber in which a deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, and the deposition object. A manufacturing method of a light emitting device using a manufacturing apparatus having a rotating means,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance between the vapor deposition source and the deposition object is 30 cm or less,
In the film formation chamber, the deposition material is deposited by rotating the deposition target while moving the deposition source arranged to face the deposition target, and depositing the deposition material. . A film forming chamber in which a deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, and the deposition object. A manufacturing method of a light emitting device using a manufacturing apparatus having a rotating means,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance between the vapor deposition source and the deposition object is 30 cm or less,
In the film formation chamber, the deposition material is deposited by rotating the deposition source while moving the deposition source disposed facing the deposition subject in a zigzag manner. Manufacturing method. A film forming chamber in which a deposition object is disposed includes a plurality of deposition sources having a deposition material, a deposition source holder in which the plurality of deposition sources are installed, means for moving the deposition source holder, and the deposition object. A manufacturing method of a light emitting device using a manufacturing apparatus having a rotating means,
The evaporation source holder is provided with the plurality of evaporation sources obliquely so that the evaporation directions from the evaporation sources intersect at the position of the deposition object,
The distance between the vapor deposition source and the deposition object is 30 cm or less,
In the film forming chamber, the deposition source is rotated while moving the deposition source disposed facing the deposition target so as to draw an arc in a two-dimensional plane, thereby depositing the deposition material. A method for manufacturing a light-emitting device. In any one of claims 6 to 8, a method for manufacturing a light-emitting device, wherein the deposition material is an organic compound material.

Images