JP2003313655A - Producing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which utilizes EL materials efficiently and makes films with excellent uniformity. <P>SOLUTION: The apparatus comprises a movable vapor source and a means for rotating a substrate on it. A distance between a vapor source holder 17 and a subject of deposition, being a substrate 13, is kept 30 cm or less, preferably 20 cm or less, and further preferably 5-15 cm. The holder 17 is moved in the X-direction or Y-direction and the substrate 13 is rotated or fixed when a film is deposited on it. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus used for forming a material capable of forming a film by vapor deposition (hereinafter referred to as vapor deposition material). In particular, the present invention is an effective technique when an organic material is used as a vapor deposition material.

[0002]

2. Description of the Related Art In recent years, research on a light emitting device having an EL element as a self-luminous element has become active, and in particular, a light emitting device using an organic material as an EL material has attracted attention.
This light emitting device is also called an organic EL display or an organic light emitting diode.

The EL element has a layer containing an organic compound (hereinafter referred to as an EL layer) which can obtain luminescence (Electro Luminescence) generated by applying an electric field, an anode and a cathode. Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence). The light-emitting device manufactured by the method and the film formation method can be applied regardless of which light emission is used.

Unlike the liquid crystal display device, the light emitting device is of a self-luminous type and has a feature that it does not have a problem of a viewing angle. That is, it is more suitable as a display used outdoors than a liquid crystal display, and its use in various forms has been proposed.

An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. A typical example is a laminated structure of "hole transport layer / light emitting layer / electron transport layer" proposed by Tang et al. Of Kodak Eastman Company. This structure has a very high luminous efficiency, and most of the light-emitting devices currently being researched and developed employ this structure.

In addition, a hole injection layer / hole transport layer / light emitting layer / electron transport layer or a hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer may be formed on the anode. A structure in which they are laminated in order is also preferable. You may dope a fluorescent dye etc. with respect to a light emitting layer. Further, all of these layers may be formed by using a low molecular weight material or may be formed by using a high molecular weight material.

In this specification, all layers provided between the cathode and the anode are generically called EL layers. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer described above are all included in the EL layer.

Further, in the present specification, a light emitting element formed of a cathode, an EL layer and an anode is referred to as an EL element, which has two kinds of stripe-shaped electrodes arranged so as to be orthogonal to each other. There are two types: a method of forming an EL layer (simple matrix method) and a method of forming an EL layer between a pixel electrode connected to a TFT and arranged in a matrix and a counter electrode (active matrix method).

The EL materials for forming the EL layer are roughly classified into low molecular weight (monomer type) materials and high molecular weight (polymer type) materials. Among them, the low molecular weight materials are mainly formed by vapor deposition. To be done.

EL materials are extremely susceptible to deterioration, and are easily oxidized and deteriorated in the presence of oxygen or water. Therefore, the photolithography process cannot be performed after the film formation, and it is necessary to separate the film at the same time as the film formation with a mask having an opening (hereinafter referred to as a vapor deposition mask) for patterning. Therefore, most of the sublimated organic EL material adheres to the inner wall of the film forming chamber or the deposition shield (protective plate for preventing the vapor deposition material from adhering to the inner wall of the film forming chamber).

Further, in the conventional vapor deposition apparatus, in order to increase the uniformity of the film thickness, the distance between the substrate and the vapor deposition source is widened,
The device itself was getting larger. Further, since the distance between the substrate and the vapor deposition source is wide, the film formation rate is slowed down, the time required for exhausting the film in the film formation chamber is long, and the throughput is lowered.

In addition, in the conventional vapor deposition apparatus, the utilization efficiency of expensive EL material is extremely low, about 1% or less, and the manufacturing cost of the light emitting device is very expensive.

[0013]

EL materials are very expensive, and the unit price of gram is several times higher than that of gold.
It is desired to use it as efficiently as possible. However, the conventional vapor deposition apparatus has low utilization efficiency of expensive EL materials.

It is an object of the present invention to provide a vapor deposition apparatus which enhances the utilization efficiency of EL materials, is excellent in uniformity, and is excellent in throughput.

[0015]

According to the present invention, during vapor deposition, the distance d between the substrate and the vapor deposition source is typically narrowed to 30 cm or less, and the utilization efficiency and throughput of the vapor deposition material are significantly improved. By reducing the distance d between the substrate and the vapor deposition source, the size of the film forming chamber can be reduced. Due to the miniaturization, the volume of the film forming chamber is reduced, so that the time for vacuum evacuation can be shortened, and the total amount of impurities existing in the film forming chamber can be reduced, so that impurities (moisture and oxygen) in the high-purity EL material can be reduced. Etc.) to prevent mixture.
According to the present invention, it is possible to cope with further high purification of vapor deposition materials in the future.

In addition, in the vapor deposition chamber, the vapor deposition source holder in which the container in which the vapor deposition material is enclosed is installed moves at a certain pitch with respect to the substrate. In this specification, a manufacturing apparatus having a vapor deposition apparatus having a moving vapor deposition holder is called a moving cell cluster system. Further, one vapor deposition holder can be provided with two or more crucibles, preferably four or six crucibles. According to the present invention, since the vapor deposition source holder moves, if the moving speed is high, the vapor deposition mask is hardly heated, and it is possible to suppress film formation defects caused by deformation of the mask due to heat.

The structure of the invention disclosed in the present specification is a film forming apparatus for forming a film on the substrate by evaporating an evaporation material from an evaporation source arranged facing the substrate, wherein the substrate is arranged. The film forming chamber having a vapor deposition source and means for moving the vapor deposition source, and performing film deposition by moving the vapor deposition source in the X direction, the Y direction, or zigzag. A manufacturing apparatus having a device.

Further, even if a mechanism for rotating the substrate is provided in the film forming chamber and the substrate is rotated and the evaporation source is moved at the same time during the evaporation, the film having excellent film thickness uniformity can be formed. Good.

The structure of the invention disclosed in this specification is a film forming apparatus for forming a film on the substrate by evaporating an evaporation material from an evaporation source arranged facing the substrate, wherein the substrate is arranged. The film forming chamber has an evaporation source, a means for moving the evaporation source, and a means for rotating the substrate. The evaporation source is moved, and at the same time, the substrate is rotated to form a film. A manufacturing apparatus having a film forming apparatus characterized by the above.

Further, a multi-chamber type manufacturing apparatus can be used, and another structure of the present invention is to provide a load chamber, a transfer chamber connected to the load chamber, and a film formation connected to the transfer chamber. A manufacturing apparatus having a chamber, wherein the film forming chamber has a vapor deposition source, means for moving the vapor deposition source, and means for rotating a substrate, and moving the vapor deposition source, and
At the same time, the manufacturing apparatus is equipped with a film-forming apparatus characterized in that the substrate is rotated to perform film-forming.

In each of the above structures, the distance between the vapor deposition source and the substrate is 30 cm or less, preferably 5 cm to 15 cm.
The use efficiency and the throughput of the vapor deposition material are remarkably improved by narrowing to cm. These distances may be adjusted by moving means for moving the vapor deposition holder in the Z direction.
In the present invention, since the distance between the substrate and the vapor deposition source is small,
It is possible to reduce the amount of material flying to areas other than the substrate (for example, the inner wall of the film forming chamber) and improve the material usage efficiency. If the adhesion of the inner wall of the film forming chamber can be reduced, the frequency of maintenance such as cleaning of the inner wall of the film forming chamber can be reduced.

Further, in each of the above-mentioned constitutions, the film forming chamber is connected to a vacuum exhaust processing chamber for evacuating the film forming chamber.

Further, in each of the above-mentioned constitutions, the vapor deposition source moves in the X direction or the Y direction. Further, in each of the above structures, a mask is provided between the substrate and the vapor deposition source, and the mask is a mask made of a metal material having a low coefficient of thermal expansion.

Further, according to another constitution of the present invention, as shown in FIG. 6, the film may be formed by fixing the substrate and moving the vapor deposition source, and the load chamber is connected to the load chamber. A manufacturing apparatus having a transfer chamber and a film forming chamber connected to the transfer chamber, wherein the film forming chamber includes an evaporation source, a means for moving the evaporation source, and a means for fixing the substrate. A manufacturing apparatus having a film forming apparatus, which has the substrate fixed and moves the vapor deposition source in the X direction or the Y direction to perform film formation.

Further, in each of the above constitutions, the vapor deposition material is an organic compound material or a metal material.

When the main processes in which impurities such as oxygen and water may be mixed into the EL material or metal material to be vapor-deposited, the EL material or metal material is set in the vapor deposition apparatus before vapor deposition. A process, a vapor deposition process, etc. can be considered.

Usually, the container for storing the EL material is put in a brown glass bottle and has a plastic lid (cap).
Closed in. It is also possible that the container for storing this EL material has an insufficient degree of sealing.

Conventionally, when a film is formed by a vapor deposition method, a predetermined amount of an evaporation material contained in a container (glass bottle) is taken out, and the container is installed at a position facing the film-forming product in the vapor deposition apparatus. (Typically, it is transferred to a crucible or vapor deposition boat), but impurities may be mixed in during this transfer operation. That is, oxygen, water, and other impurities that are one of the causes of deterioration of the EL element may be mixed.

When transferring from a glass bottle to a container, it can be considered to be carried out manually by a human in a pretreatment chamber in which a vapor deposition apparatus is provided with gloves or the like. However, when the pretreatment chamber is equipped with a glove, it cannot be evacuated and work is performed at atmospheric pressure, and it is difficult to reduce water and oxygen in the pretreatment chamber as much as possible even if performed in a nitrogen atmosphere. Met. Although it is possible to use a robot, it is difficult to make a transfer robot because the evaporation material is powdery. Therefore, E on the lower electrode
It has been difficult to fully automate the steps from the step of forming the L layer to the step of forming the upper electrode to form a consistent closed system capable of avoiding contamination of impurities.

Therefore, the present invention does not use a conventional container, typically a brown glass bottle, as a container for storing the EL material, but directly puts the EL material or the metal material into the container to be installed in the vapor deposition apparatus. This is a manufacturing system in which the vapor deposition is carried out after being stored and transported, and it is possible to prevent impurities from being mixed in the vapor deposition material of high purity. Further, when directly storing the vapor deposition material of the EL material, instead of separately storing the obtained vapor deposition material,
Sublimation purification may be performed directly on a container to be installed in the vapor deposition device. According to the present invention, it is possible to cope with further high purification of vapor deposition materials in the future. Alternatively, the metal material may be directly stored in a container to be installed in the vapor deposition apparatus, and vapor deposition may be performed by heating resistance.

For the work of directly storing the vapor deposition material in the container installed in the vapor deposition apparatus, it is desirable to request the material manufacturer who manufactures or sells the vapor deposition material from the light emitting device manufacturer who uses the vapor deposition apparatus.

Further, no matter how high the purity of the EL material is provided by the material maker, there is a possibility that impurities will be mixed in as long as the light emitting device maker has a conventional transfer operation, and the purity of the EL material can be maintained. It was not possible and there was a limit to the purity.
According to the present invention, the light emitting device manufacturer and the material manufacturer cooperate with each other to reduce the inclusion of impurities, so that the EL material having an extremely high purity obtained by the material manufacturer is maintained, and vapor deposition is performed by the light emitting device manufacturer without degrading the purity. be able to.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment) FIG. 1 shows a film forming apparatus of the present invention. 1A is a cross-sectional view and FIG. 1B is a top view.

In FIG. 1, 11 is a film forming chamber, 12 is a substrate holder, 13 is a substrate, 14 is a vapor deposition mask, 15 is a vapor deposition shield (vapor deposition shutter), 17 is a vapor deposition source holder, and 18 is a vapor deposition source holder.
Is a vapor deposition material, and 19 is an evaporated vapor deposition material 19.

The degree of vacuum is 5 × 10^-3Torr (0.665
Pa) or less, preferably 10^-Four-10 ^-6Vacuum exhaust to Pa
Vapor deposition is performed in the film forming chamber 11 which has been exposed. Before vapor deposition,
The vapor deposition material has been vaporized (vaporized) by anti-heating.
Sometimes a shutter (not shown) is opened to open the substrate 1
Scatter in the direction of 3. Evaporated material 19 that has evaporated
Scatter and pass through the openings provided in the vapor deposition mask 14
It is selectively vapor-deposited on the plate 13.

In the above vapor deposition apparatus, the vapor deposition source holder accommodates the crucible, the heater provided outside the crucible via the heat equalizing member, the heat insulating layer provided outside the heater, and the heat insulating layer. It is composed of an outer cylinder, a cooling pipe swirled outside the outer cylinder, and a shutter device for opening and closing the opening of the outer cylinder including the opening of the crucible. In the present specification, the crucible is a sintered body of BN, BN and A.
A cylindrical container having a relatively large opening formed of a material such as a 1N composite sintered body, quartz, or graphite, and capable of withstanding high temperature, high pressure, and reduced pressure.

It should be noted that it is preferable that the film formation rate can be controlled by a microcomputer.

In the vapor deposition apparatus shown in FIG. 1, during vapor deposition, the distance d between the substrate 13 and the vapor deposition source holder 17 is typically reduced to 30 cm or less, preferably 20 cm or less, and more preferably 5 cm to 15 cm. Utilization efficiency and throughput of vapor deposition materials have been significantly improved. Further, in the vapor deposition apparatus shown in FIG. 1, the vapor deposition source holder 17 stores the vapor deposition material 18 in an elongated container having an opening having the same width as the substrate. In addition, a plurality of crucibles may be arranged in parallel to be vapor-deposited in an elongated shape.

Further, the substrate holder 12 is provided with a mechanism for rotating the substrate 13. Further, the vapor deposition source holder 17 is provided with a mechanism capable of moving in the film forming chamber 11 in the X direction or the Y direction while maintaining the horizontal position. Although FIG. 1 shows an example in which the evaporation source holder 17 is moved in only one direction, the evaporation source holder 17 may be moved in the X direction or the Y direction in a two-dimensional plane. Further, the vapor deposition source holder 201 may be reciprocated a plurality of times in the X direction or the Y direction, may be moved obliquely, or may be moved so as to draw an arc. Further, the evaporation source holder 201 may be moved at a constant acceleration, or acceleration / deceleration may be performed near the substrate. For example, the vapor deposition source holder 201 may be moved in a zigzag manner as shown in FIG. In FIG. 6, 200 is the substrate, 201 is the vapor deposition holder, and 202 is the direction in which the vapor deposition holder moves. In addition, in FIG.
Two crucibles can be installed and vapor deposition material 203a
And the vapor deposition material 203b are filled in different crucibles.

The vapor deposition apparatus shown in FIG. 1 has the substrate 1 during vapor deposition.
By performing the rotation of 3 and the movement of the evaporation source holder 17 at the same time, the film formation with excellent film thickness uniformity is performed. In addition, the substrate is fixed during vapor deposition,
The substrate may be rotated after vapor deposition.

Further, the movable evaporation source holder 17 may be provided with an evaporation shutter. Moreover, the number of organic compounds provided in one vapor deposition source holder is not necessarily one, and a plurality of organic compounds may be provided. For example, in addition to one type of material provided as a light-emitting organic compound in the vapor deposition source, another organic compound that can serve as a dopant (dopant material)
You may prepare for together. The organic compound layer to be vapor-deposited is composed of a host material and a light emitting material (dopant material) whose excitation energy is lower than that of the host material, and the excitation energy of the dopant is the excitation energy of the hole transporting region and the excitation of the electron transport layer. It is preferably designed to be lower than energy. As a result, diffusion of molecular excitons of the dopant can be prevented, and the dopant can effectively emit light. Further, if the dopant is a carrier trap type material, the recombination efficiency of carriers can be increased. Further, a case where a material capable of converting triplet excitation energy into light emission is added to the mixed region as a dopant is also included in the present invention. In forming the mixed region, the mixed region may have a concentration gradient.

When a plurality of organic compounds are provided in one vapor deposition source holder, it is desirable that the vaporizing directions of the organic compounds are mixed with each other so that the vaporizing directions intersect with each other at the position of the object to be vapor deposited. . Further, as shown in FIG. 6, the vapor deposition holder 201 may be provided with four vapor deposition materials (two host materials as the vapor deposition material a and two dopant materials as the vapor deposition material b) in order to perform the co-evaporation.

The distance d between the substrate 13 and the evaporation source holder 17 is typically 30 cm or less, preferably 5 cm.
Since the width is narrowed to about 15 cm, the vapor deposition mask 14 may also be heated. Therefore, the vapor deposition mask 14 is made of a metal material having a low coefficient of thermal expansion that is not easily deformed by heat (for example, a refractory metal such as tungsten, tantalum, chromium, nickel or molybdenum or an alloy containing these elements, stainless steel, Inconel, Hastelloy, etc.). It is desirable to use, for example, nickel 42%,
Examples include low thermal expansion alloys of 58% iron. Further, in order to cool the vapor deposition mask to be heated, a mechanism for circulating a cooling medium (cooling water, cooling gas) in the vapor deposition mask may be provided.

The vapor deposition mask 14 is used when selectively forming the vapor deposition film, and is not particularly necessary when the vapor deposition film is formed on the entire surface.

Further, the substrate holder 12 is provided with a permanent magnet, and the vapor deposition mask made of metal is fixed by magnetic force,
The substrate 13 sandwiched between them is also fixed. Here, an example in which the vapor deposition mask is in close contact with the substrate 13 is shown, but a substrate holder or a vapor deposition mask holder for fixing the vapor deposition mask at a certain interval may be provided as appropriate.

Further, in the film forming chamber 11, the film forming chamber is evacuated.
It is connected to the vacuum exhaust processing chamber. Vacuum exhaust processing chamber
As a magnetic levitation type turbo molecular pump,
Pump or dry pump. By this
The ultimate vacuum of the transfer chamber is 10 ^-Five-10^-6Set to Pa
Is possible, and further impurities from the pump side and exhaust system
The back diffusion of the substance can be controlled. Impurities inside the device
In order to prevent the introduction of
An inert gas such as elemental gas or rare gas is used. Installed inside the device
These gases are purified before being introduced into the equipment.
Use the one highly purified by the machine. Therefore, the gas
Gas purification so that it is introduced into the film forming equipment after being highly purified.
It is necessary to have a machine. As a result, the gas content
It is possible to remove oxygen, water, and other impurities that are trapped in advance.
Therefore, these impurities are introduced inside the device.
Can be prevented.

Further, a plasma generating means is provided in the film forming chamber 11, and plasma (one or more kinds selected from Ar, H, F, NF ₃ or O is selected in the film forming chamber in a state where the substrate is not arranged. The plasma may be generated by exciting the gas of (1) to generate a plasma to vaporize the deposit adhered to the inner wall of the deposition chamber, the deposition shield, or the vapor deposition mask, and exhaust the gas to the outside of the deposition chamber for cleaning. . In this way, it is possible to clean the deposition chamber without exposing it to the atmosphere during maintenance. During cleaning, the vaporized organic compound can be recovered by an exhaust system (vacuum pump) or the like and reused.

The present invention having the above structure will be described in more detail with reference to the following examples.

(Example) [Example 1] Here, a manufacturing process of an active matrix light emitting device including an EL element having a pixel portion and a driver circuit on the same substrate will be described as an example with reference to FIG.

First, as shown in FIG. 2A, a thin film transistor (hereinafter referred to as TFT) 22 is formed on a substrate 21 having an insulating surface by a known manufacturing process. The pixel portion 20a has an n-channel TFT and a p-channel TF.
Although T is provided, here, a p-channel TFT for supplying a current to the organic light emitting element is illustrated. The TFT that supplies a current to the organic light emitting element may be an n-channel TFT or a p-channel TFT. The drive circuit 20b provided around the pixel portion includes an n-channel type T
An FT, a p-channel TFT, and a CMOS circuit in which these are complementarily combined are formed. Note that here, a transparent oxide conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —
An example in which an anode 23 made of ZnO), zinc oxide (ZnO), or the like) is formed in a matrix and then a wiring connected to the active layer of the TFT is formed is shown. Next, the insulating film 24 made of an inorganic insulating material or an organic insulating material is formed to cover the end portion of the anode 23.

Next, as shown in FIG. 2B, an organic compound layer (EL layer) forming an EL element is formed.

First, the anode 23 is cleaned as a pretreatment. As the cleaning of the anode surface, ultraviolet ray irradiation in vacuum or oxygen plasma treatment is performed to clean the anode surface. Further, as the oxidation treatment, 10
It is sufficient to irradiate with ultraviolet rays in an atmosphere containing oxygen while heating at 0 to 120 ° C., and it is effective when the anode is an oxide such as ITO. In addition, the heat treatment is performed at a heating temperature of 50 ° C. or higher, which the substrate can withstand in vacuum, preferably 6
The heating may be performed at 5 to 150 ° C., and impurities such as oxygen and moisture attached to the substrate and impurities such as oxygen and moisture in the film formed over the substrate are removed. Particularly, since the EL material is easily deteriorated by impurities such as oxygen and water, it is effective to heat it in vacuum before vapor deposition.

Then, without exposing to the atmosphere, as shown in FIG.
The film is transported to a film forming chamber as a film forming apparatus shown in (1), and a hole transporting layer, a hole injecting layer, a light emitting layer or the like, which is one layer of the organic compound layer, is appropriately laminated on the anode 23. Here, evaporation is performed by heating an evaporation source provided in a film forming chamber which is the film forming apparatus illustrated in FIG. 1 to form a hole injection layer 25 and a light emitting layer (R) 26.
And a light emitting layer (G) 27 and a light emitting layer (B) 28 are formed. The light emitting layer (R) is a light emitting layer that emits red light, the light emitting layer (G) is a light emitting layer that emits green light, and the light emitting layer (B) is a light emitting layer that emits blue light. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.

Next, the cathode 29 is formed. The film forming chamber shown in FIG. 1 may be used to form the cathode 29. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the cathode, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.

As a material used for the cathode 29, it is preferable to use a metal having a small work function (typically a metal element belonging to Group 1 or 2 of the periodic table) or an alloy containing these. Since the smaller the work function is, the higher the luminous efficiency is, the alloy material containing Li (lithium), which is one of the alkali metals, is preferable as the material used for the cathode. The cathode also functions as a wiring common to all pixels, and has a terminal electrode in the input terminal portion via the connection wiring.

Then, by encapsulating with a protective film, a sealing substrate, or a sealing can, the organic light emitting element is completely shielded from the outside, and a substance that promotes deterioration due to oxidation of the EL layer such as moisture or oxygen from the outside is added. It is preferable to prevent intrusion. A desiccant may be installed.

Next, an FPC (flexible printed circuit) is attached to each electrode of the input / output terminal portion with an anisotropic conductive material. The anisotropic conductive material is composed of resin and conductive particles having a diameter of several tens to several hundreds of μm whose surface is plated with Au or the like. The conductive particles are formed on each electrode of the input / output terminal and the FPC. The wiring is electrically connected.

If necessary, an optical film such as a circularly polarizing plate composed of a polarizing plate and a retardation plate may be provided, or an IC chip or the like may be mounted.

Through the above steps, the module type active matrix light emitting device to which the FPC is connected is completed.

Further, here, the anode is a transparent conductive film,
Although an example in which the anode, the organic compound layer, and the cathode are laminated in this order is shown, the present invention is not limited to this laminated structure, and the cathode, the organic compound layer, and the anode may be laminated in this order, or the anode may be a metal layer. Then, the anode, the organic compound layer, and the light-transmitting cathode may be laminated in this order.

Although the example of the top gate type TFT is shown here as the structure of the TFT, the present invention can be applied regardless of the TFT structure, for example, a bottom gate type (inverse stagger type) TFT or a forward type TFT. It can be applied to a stagger type TFT.

[Embodiment 2] FIG. 3 is a view showing the appearance of a top view of an EL module. On a substrate (also referred to as a TFT substrate) 35 provided with innumerable TFTs, a pixel portion 30 for displaying and a drive circuit 3 for driving each pixel of the pixel portion.
1a and 31b, a connecting portion for connecting the cathode and the lead wiring provided on the EL layer, and a terminal portion 32 to which an FPC is attached for connecting to an external circuit are provided. Further, the EL element is sealed with a substrate and a sealing material 34.

Although the cross section of the pixel portion in FIG. 3 is not particularly limited, here, the cross sectional view of FIG. 2B is taken as an example, and a protective film or a sealing substrate is added to the cross sectional structure of FIG. 2B. This is after a sealing process such as bonding.

An insulating film is provided on the substrate, a pixel portion and a driving circuit are formed above the insulating film, and the pixel portion includes a current controlling TFT and a pixel electrode electrically connected to its drain. It is formed by a plurality of pixels. The driver circuit is formed using a CMOS circuit in which an n-channel TFT and a p-channel TFT are combined.

These TFTs may be formed by using a known technique.

The pixel electrode also functions as an anode of a light emitting element (organic light emitting element). An insulating film called a bank is formed on both ends of the pixel electrode, and an organic compound layer and a cathode of the light emitting element are formed on the pixel electrode.

The cathode also functions as a wiring common to all pixels, and is electrically connected to a terminal portion connected to the FPC via a connection wiring. Further, all the elements included in the pixel portion and the driving circuit are covered with the cathode and the protective film. Further, it may be attached to the cover material (substrate for sealing) with an adhesive. In addition, the cover material may be provided with a recess and a desiccant may be placed therein.

Further, this embodiment can be freely combined with the embodiment modes.

[Embodiment 3] In Embodiment 1, as the TFT 22, a top gate type TFT (specifically, a planar type TF) is used.
T) is shown as an example, but in this embodiment, the TFT
A TFT 42 is used instead of 22. The TFT 42 used in this embodiment is a bottom gate type TFT (specifically, an inverted stagger type TFT) and may be formed by a known manufacturing process.

First, as shown in FIG. 4A, a bottom gate type TFT 42 is formed on a substrate 41 having an insulating surface by a known manufacturing process. Note that here, after the TFT is formed, metal layers (Pt, Cr, W, Ni, Zn, S) are formed.
An example is shown in which the anode 43 made of a conductive material containing one or more elements selected from n and In is formed in a matrix.

Next, an insulating film 44 made of an inorganic insulating material or an organic insulating material is formed to cover the end portion of the anode 43.

Next, as shown in FIG. 4B, an organic compound layer (EL layer) forming an EL element is formed. The film is conveyed to a film forming chamber equipped with a vapor deposition source, and a hole transport layer, a hole injection layer, a light emitting layer, or the like, which is one layer of an organic compound layer, is appropriately laminated on the anode 43. Here, vapor deposition is performed by the film forming apparatus shown in FIG. 1 to form the hole injection layer 45 and the light emitting layer (R) 46.
And a light emitting layer (G) 47 and a light emitting layer (B) 48 are formed. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material,
Also, the throughput can be significantly improved.

Next, the lower layer cathode 49a is formed by the film forming apparatus shown in FIG. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the cathode 49a, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved. The lower cathode 49a is a very thin metal film (an alloy such as MgAg, MgIn, AlLi, or CaN, or a film formed by co-evaporating an element belonging to Group 1 or 2 of the periodic table and aluminum), or It is preferable to use a stack of them.

Next, an electrode 49b is formed on the cathode 49a. (FIG. 4C) A transparent oxide conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) is used for the electrode 49b. Good. Since the stacked structure in FIG. 4C is a case where light is emitted in the direction of an arrow in the drawing (a case where light is emitted through a cathode), a light-transmitting conductive material is used for an electrode including a cathode. preferable.

The subsequent steps are the same as those of the method of manufacturing the module type active matrix light emitting device shown in the first embodiment, and therefore the description thereof is omitted here.

Further, this embodiment can be freely combined with any of the embodiment mode, Embodiment 1, or Embodiment 2.

[Embodiment 4] In this embodiment, an example of a multi-chamber type manufacturing apparatus in which the manufacturing up to the upper electrode is fully automated is shown in FIG.

In FIG. 5, 100a to 100k, 10
0m to 100u is a gate, 101 is a preparation room, 119 is an extraction room, 102, 104a, 108, 114 and 118 are transfer rooms, 105, 107 and 111 are delivery rooms, 106R and 1R.
06B, 106G, 109, 110, 112 and 113 are film forming chambers, 103 is a pretreatment chamber, 117 is a sealed substrate loading chamber, 115 is a dispenser chamber, 116 is a sealing chamber, 120
Reference numerals a and 120b are cassette chambers, and 121 is a tray mounting stage.

Then, the substrate on which the TFT 22 and the anode 23 are previously provided is carried into the manufacturing apparatus shown in FIG.
The procedure for forming the laminated structure shown in FIG.

First, the substrate provided with the TFT and the anode 23 is set in the cassette chamber 120a or the cassette chamber 120b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 120 b, and when the substrate is a normal substrate (for example, 127 mm × 127 mm), it is transferred to the tray mounting stage 121 and the tray (for example, 300 mm).
× 360mm) with several boards.

Next, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101.

The charging chamber 101 is connected to the vacuum evacuation processing chamber, and it is preferable that the evacuation is performed and then an inert gas is introduced to maintain the atmospheric pressure. Then, it is transported to the transport chamber 102 connected to the preparation chamber 101. In advance, the vacuum is maintained by vacuum evacuation so that moisture and oxygen are not present in the transfer chamber as much as possible.

Further, the transfer chamber 102 is connected to a vacuum evacuation processing chamber that evacuates the transfer chamber. The vacuum evacuation processing chamber is equipped with a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum in the transfer chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. To prevent impurities from being introduced into the device, the gas to be introduced is:
An inert gas such as nitrogen or a rare gas is used. As these gases introduced into the apparatus, those highly purified by a gas purifier before being introduced into the apparatus are used. Therefore, it is necessary to provide a gas purifier so that the gas is highly purified and then introduced into the film forming apparatus. As a result, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

Further, in order to remove moisture and other gas contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, which is transferred to the pretreatment chamber 103 connected to the transfer chamber 102, Therefore, annealing may be performed. Further, if it is necessary to clean the surface of the anode, it may be transported to the pretreatment chamber 103 connected to the transport chamber 102 and cleaned there.

An organic compound layer made of a polymer may be formed on the entire surface of the anode. The film forming chamber 112 is a film forming chamber for forming an organic compound layer made of a polymer. In this embodiment, an example in which a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as the hole injection layer 25 is formed on the entire surface is shown.
When the organic compound layer is formed in the film forming chamber 112 by a spin coating method, an ink jet method, or a spray method, the substrate is set with the film formation surface facing upward under atmospheric pressure. In the present embodiment, the delivery chamber 105 is equipped with a substrate reversing mechanism to properly invert the substrate. After the film formation using the aqueous solution, it is preferable that the film is transferred to the pretreatment chamber 103, and heat treatment in a vacuum is performed there to vaporize the water.
Although the example of forming the hole injection layer 25 made of a polymer is shown in this embodiment, the hole injection layer made of a low molecular weight organic material may be formed by vapor deposition by a resistance heating method. The injection layer 25 may not be provided in particular.

Next, the substrate 104c is transferred from the transfer chamber 102 to the delivery chamber 105 without being exposed to the atmosphere, and then the substrate 104c is transferred to the transfer chamber 104 to transfer the transfer mechanism 1
04b, the EL layer 26 which is transported to the film formation chamber 106R and emits red light is appropriately formed on the anode 23. Here, it is formed by vapor deposition using resistance heating. Film forming chamber 106R
In the transfer chamber 105, the substrate deposition surface is set downward. Note that it is preferable that the deposition chamber be evacuated before loading the substrate.

For example, the degree of vacuum is 5 × 10 ⁻³ Torr.
(0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ P
Vapor deposition is performed in the film forming chamber 106R that is evacuated to a. During vapor deposition, the organic compound is vaporized in advance by resistance heating, and a shutter (not shown) is opened during vapor deposition to scatter toward the substrate. The vaporized organic compound is
It scatters upward and is deposited on the substrate through an opening (not shown) provided in a metal mask (not shown).

In this embodiment, film formation is performed using the film forming apparatus shown in FIG. By performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput can be significantly improved.

Here, in order to obtain full color, after film formation in the film formation chamber 106R, each film formation chamber 106G, 1
The film is formed with 06B to appropriately form the organic compound layers 26 to 28 which emit red, green, and blue light.

After the hole injection layer 25 and the desired EL layers 26 to 28 are obtained on the anode 23, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and then, The substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Next, the transfer mechanism installed in the transfer chamber 108 transfers the film to the film forming chamber 110, and the cathode 29 made of a metal layer is appropriately formed by a vapor deposition method by resistance heating.
Here, the film formation chamber 110 is an evaporation device in which Li and Al are provided as evaporation sources and evaporation is performed by resistance heating.

Through the above steps, the light emitting element having a laminated structure shown in FIG. 2B is formed.

Next, the transfer chamber 1 is exposed without being exposed to the atmosphere.
The film is transferred from 08 to the film formation chamber 113 to form a protective film made of a silicon nitride film or a silicon nitride oxide film. Here, the sputtering apparatus includes a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride in the film formation chamber 113. For example, a silicon nitride film can be formed by using a target made of silicon and making the atmosphere of the film formation chamber a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 108 to the delivery chamber 111 and further transferred from the delivery chamber 111 to the transfer chamber 114 without being exposed to the atmosphere.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. The sealing chamber 1
It is preferable that a sealing substrate provided with a sealing material is prepared for 16.

The sealing substrate is set in the sealing substrate loading chamber 117 from the outside. In order to remove impurities such as moisture, it is preferable to perform annealing in vacuum in advance, for example, annealing in the sealed substrate loading chamber 117. When the sealing material is formed on the sealing substrate, the transfer chamber 1
After setting the atmospheric pressure to 08, the sealing substrate is conveyed from the sealing substrate loading chamber to the dispenser chamber 115, and a sealing material for bonding to the substrate provided with the light emitting element is formed, and the sealing material is formed. The stop substrate is transferred to the sealing chamber 116.

Then, in order to degas the substrate provided with the light emitting element, annealing is performed in a vacuum or an inert atmosphere, and then a sealing substrate provided with a sealing material and a substrate provided with the light emitting element are provided. Stick together. Here, an example in which the sealing material is formed on the sealing substrate is shown, but the sealing material is not particularly limited, and the sealing material may be formed on the substrate on which the light emitting element is formed.

Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealing material. Although the ultraviolet curable resin is used as the sealant here, it is not particularly limited as long as it is an adhesive.

Next, the pair of bonded substrates are transferred from the sealing chamber 116 to the transfer chamber 114, and from the transfer chamber 114 to the extraction chamber 119 and taken out.

As described above, by using the manufacturing apparatus shown in FIG. 5, it is not necessary to expose the light-emitting element to the outside air until the light-emitting element is completely enclosed in the sealed space, so that a highly reliable light-emitting device can be manufactured. Becomes In the transfer chamber 114,
Although the vacuum and the nitrogen atmosphere at the atmospheric pressure are repeated, it is desirable that the transfer chambers 102, 104a and 108 are always kept in the vacuum.

It is also possible to use an in-line type film forming apparatus.

A procedure for carrying in a substrate having a TFT and an anode provided in advance to the manufacturing apparatus shown in FIG. 5 to form the laminated structure shown in FIG. 4C will be described below.

First, as in the case of forming the laminated structure of FIG. 2A, the cassette chamber 120a or the cassette chamber 120 is formed.
The substrate provided with the TFT and the anode 43 is set in b.

Then, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the preparation chamber 101. Next, the preparation room 10
It is transported to the transport chamber 102 connected to 1.

Further, in order to remove water and other gases contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, which is transferred to the pretreatment chamber 103 connected to the transfer chamber 102, Therefore, annealing may be performed. Further, if it is necessary to clean the surface of the anode, it may be transported to the pretreatment chamber 103 connected to the transport chamber 102 and cleaned there.

Further, an organic compound layer made of a polymer may be formed on the entire surface of the anode. The film forming chamber 112 is a film forming chamber for forming an organic compound layer made of a polymer. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as the hole injection layer 45 may be formed on the entire surface. Film forming chamber 11
When the organic compound layer is formed by the spin coating method, the ink jet method, or the spray method in 2, the substrate is set with the film formation surface facing upward under atmospheric pressure. Delivery room 105
Is equipped with a substrate reversing mechanism, which appropriately inverts the substrate. After the film formation using the aqueous solution, it is preferable that the film is transported to the pretreatment chamber 103, and heat treatment in a vacuum is performed there to vaporize the water.

Next, after transferring the substrate 104c from the transfer chamber 102 to the delivery chamber 105 without exposing it to the atmosphere, the substrate 104c is transferred to the transfer chamber 104, and the transfer mechanism 1
04b, the EL layer 46 that is transported to the film formation chamber 106R and appropriately emits red light is appropriately formed on the anode 43. Here, it is formed by vapor deposition using the film forming apparatus of FIG. By performing vapor deposition using the film forming apparatus shown in FIG. 1, it is possible to significantly improve the film thickness uniformity of the organic compound layer, the utilization efficiency of the vapor deposition material, and the throughput.

Here, in order to obtain full color, after film formation in the film formation chamber 106R, the film formation chambers 106G, 1
The film is formed by 06B, and the organic compound layers 46 to 48 which emit red, green, and blue light are appropriately formed.

After the hole injection layer 45 and the desired EL layers 46 to 48 are obtained on the anode 43, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and further, The substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without being exposed to the atmosphere.

Then, by the transfer mechanism installed in the transfer chamber 108, the film is transferred to the film forming chamber 110 and an extremely thin metal film (MgAg, MgIn, AlLi, CaN, or another alloy, or Group 1 of the periodic table or A cathode (lower layer) 49a made of a film formed by co-evaporating elements belonging to Group 2 and aluminum is formed by the film forming apparatus shown in FIG.
After forming the cathode (lower layer) 49a composed of a thin metal layer,
The transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (Z
electrode (upper layer) 49b made of (nO) or the like), and electrodes 49a, 49 made of a laminate of a thin metal layer and a transparent conductive film.
b is formed appropriately.

Through the above steps, the light emitting element having a laminated structure shown in FIG. 4C is formed. The light emitting element having a laminated structure shown in FIG. 4C has a light emitting direction indicated by an arrow in the drawing, and
The direction is opposite to that of the light emitting element of (B).

Further, since the subsequent steps are the same as the manufacturing procedure of the light emitting device having the laminated structure shown in FIG. 2A, the description thereof will be omitted here.

As described above, by using the manufacturing apparatus shown in FIG. 5, the laminated structure shown in FIGS. 2B and 4C can be formed separately. Further, by performing vapor deposition using the film forming apparatus shown in FIG. 1, the film thickness uniformity of the organic compound layer,
Utilization efficiency of vapor deposition materials and throughput can be significantly improved.

In addition, this embodiment is the embodiment and the first embodiment.
It is possible to freely combine any one of the above-mentioned items.

[Embodiment 5] FIG. 7 is an explanatory view of a manufacturing system of this embodiment.

In FIG. 7, 61a is a first container (crucible), and 61b is a second container for isolating the first container from the atmosphere to prevent contamination. Further, 62 is an EL material in the form of powder that has been purified to a high degree of purity. Further, 63 is a chamber capable of vacuuming, 64 is a heating means, 65 is an object to be vapor-deposited, and 66 is a vapor deposition film. Further, 68 is a material manufacturer, which produces an organic compound material which is a vapor deposition material,
Purifying manufacturer (typically a raw material supplier)
69 is a light emitting device manufacturer having a vapor deposition device, and is a light emitting device manufacturer (typically a production plant).

The flow of the manufacturing system of this embodiment will be described below.

First, the light emitting device manufacturer 69 places an order 60 with the material manufacturer 68. Material manufacturer 68 orders 6
According to 0, the first container and the second container are prepared. Then, the material manufacturer pays sufficient attention to the mixing of impurities (oxygen, water, etc.) in the clean room environment, and then the first container 61a.
The ultra-high purity EL material 62 is purified or stored. After that, it is preferable that the material manufacturer 68 seals the first container 61a with the second container 61b so that extra impurities do not adhere to the inside or the outside of the first container in the clean room environment. At the time of sealing, the inside of the second container 61b is preferably filled with vacuum or an inert gas. It is preferable to clean the first container 61a and the second container 61b before purifying or storing the ultra-high purity EL material 62.

In this embodiment, the first container 61a is
When vapor deposition is performed later, it is installed in the chamber as it is. Further, the second container 61b may be a packaging film having a barrier property that blocks the mixing of oxygen and water, but since it can be automatically taken out, it has a tubular shape.
Alternatively, a box-shaped container having a strong light-shielding property is preferable.

Then, the first container 61a is replaced by the second container 6
The material 1 is transported from the material manufacturer 68 to the light emitting device manufacturer 69 in the state of being sealed in 1b.

Then, the first container 61a is replaced by the second container 6
It is introduced into the processing chamber 63 which can be evacuated while being sealed in 1b. The processing chamber 63 is a vapor deposition chamber in which a heating means 64 and a substrate holder (not shown) are installed. After that, the inside of the processing chamber 63 is evacuated to a clean state in which oxygen and water are reduced as much as possible, then the first container 61a is taken out from the second container 61b, and the heating means 64 is provided without breaking the vacuum. A vapor deposition source can be prepared by installing. The first container 6
An object to be vapor-deposited (here, a substrate) 65 is installed so as to face 1a.

Next, the vapor deposition material can be heated by the heating means 64 such as resistance heating to form the vapor deposition film 66 on the surface of the vapor deposition target material 65 provided facing the vapor deposition source. The vapor deposition film 66 thus obtained does not contain impurities, and when a light emitting element is completed using this vapor deposition film 66, high reliability and high brightness can be realized.

In this way, the first container 61a is introduced into the vapor deposition chamber 63 without being exposed to the atmosphere even once, and vapor deposition can be performed while maintaining the purity at the stage when the vapor deposition material 62 is stored by the material manufacturer. To do. Further, by storing the EL material 62 directly in the first container 61a by the material manufacturer, only the necessary amount can be provided to the light emitting device manufacturer, and the relatively expensive EL material can be used efficiently.

In the conventional vapor deposition method by resistance heating,
The use efficiency of the material is low, and for example, there is a method of increasing the use efficiency as shown below. After the first vapor deposition with a new EL material placed in the crucible at the time of maintenance of the vapor deposition apparatus, a residue remains without being vapor deposited. Then, when the next vapor deposition is performed, the EL material is newly replenished on the residue to perform vapor deposition, and the subsequent vapor deposition can improve the use efficiency by repeating the above replenishment until maintenance is performed.
In this way, residues can cause contamination. Also,
Since the replenishment is performed by an operator, there is a possibility that oxygen and water are mixed in the vapor deposition material and the purity is lowered. Also, crucibles that have been vapor deposited several times are discarded during maintenance. Further, in order to prevent contamination of impurities, a new EL material may be put in the crucible every time vapor deposition is performed, and the crucible may be discarded after each vapor deposition, but the manufacturing cost increases.

It is possible to eliminate the glass bottle that has conventionally stored the vapor deposition material, and further to eliminate the work of transferring the glass bottle from the glass bottle to the crucible by the above-mentioned manufacturing system, thereby preventing the contamination of impurities. In addition, throughput is also improved.

According to the present embodiment, it is possible to realize a manufacturing system that is fully automated to improve the throughput, and also to realize a consistent closed system capable of avoiding inclusion of impurities in the vapor deposition material 62 purified by the material manufacturer 68. Is possible.

Further, although the EL material has been described above as an example, in the present embodiment, the metal layer serving as the cathode and the anode can also be vapor-deposited by resistance heating. If the cathode is formed by the resistance heating method, the EL element can be formed without changing the electrical characteristics (on-current, off-current, Vth, S value, etc.) of the TFT 22.

Similarly, as the metal material, the metal material is previously housed in the first container, the first container is directly introduced into the vapor deposition apparatus, and vaporized by resistance heating to form a vapor deposition film. do it.

In addition, this embodiment is the embodiment and the first embodiment.
It is possible to freely combine any of the above-mentioned items.

[Embodiment 6] In this embodiment, the form of a container to be transported will be specifically described with reference to FIG.
The second container, which is divided into an upper part (721a) and a lower part (721b) used for transportation, is provided with a fixing means 706 for fixing the first container provided on the upper side of the second container and for applying pressure to the fixing means. Spring 705, a gas inlet 708 which is a gas path for holding the second container under the second container under reduced pressure, an upper container 721a, and a lower container 72.
It has an O-ring for fixing 1b and a fastener 702. In this second container, a first container 701, in which a purified vapor deposition material is enclosed, is installed. Note that the second container is preferably formed of a material containing stainless steel, and the first container 701 is preferably formed of a material containing titanium.

In the material manufacturer, the first container 701
The purified vapor deposition material is encapsulated. Then, the second container upper part 721a and the lower part 721b are aligned with each other via the O-ring, and the upper container 721a and the lower container 721 are connected by the fastener 702.
b is fixed, and the first container 701 is sealed in the second container. After that, the inside of the second container is decompressed through the gas introduction port 708, the atmosphere is further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 701 is fixed by the fixing means 706. In addition, you may install a desiccant in a 2nd container. By maintaining the inside of the second container in a vacuum, reduced pressure, or nitrogen atmosphere in this way, even slight adhesion of oxygen or water to the vapor deposition material can be prevented.

In this state, it is transported to the light emitting device manufacturer,
The first container 701 is installed in the vapor deposition chamber. Then, the vapor deposition material is sublimated by heating, and the vapor deposition film is formed.

It is preferable that other components such as a film thickness monitor (such as a crystal oscillator) and a shutter are similarly transported without being exposed to the atmosphere and installed in the vapor deposition apparatus.

Further, in this embodiment, the crucible (filled with the vapor deposition material) vacuum-sealed in the container without being exposed to the atmosphere is taken out from the container, and an installation chamber for setting the crucible in the vapor deposition holder is provided. It is connected to the film forming chamber, and the crucible is transferred from the installation chamber by the transfer robot without touching the atmosphere. It is preferable that the installation chamber is also provided with a vacuum evacuation unit and further with a unit for heating the crucible.

With reference to FIGS. 8A and 8B, a mechanism for setting the first container 701, which is sealed and conveyed by the second containers 721a and 721b, in the film forming chamber will be described.

FIG. 8 (A) shows a rotary table 713 on which the second containers 721a and 721b containing the first container are placed,
A cross section of an installation chamber having a transport mechanism for transporting the first container and a lifting mechanism 711 is shown. Further, the installation chamber is arranged adjacent to the film forming chamber, and the atmosphere of the installation chamber can be controlled by means of controlling the atmosphere through the gas introduction port. It should be noted that the transport mechanism according to the present embodiment is configured such that the first container 70 as shown in FIG.
The configuration is not limited to the configuration in which the first container is sandwiched (pinched) and conveyed from above 1, and the configuration in which the side face of the first container is sandwiched and conveyed may be used.

The second container is placed on the rotary installation table 713 in the installation room with the fastener 702 removed. Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed. Then, the installation chamber is depressurized by a means for controlling the atmosphere. When the pressure in the installation chamber becomes equal to the pressure in the second container, the second container is ready to be opened. Then, by the lifting mechanism 711, the second
The upper part 721a of the container is removed, and the rotary installation table 713 is rotated about the rotation shaft 712 to move the lower part of the second container and the first container. And the first
The container 701 is transferred to the vapor deposition chamber by the transfer mechanism, and the first container 701 is set on the vapor deposition source holder (not shown).

Then, the vapor deposition material is sublimated by the heating means provided in the vapor deposition source holder, and film formation is started. When a shutter (not shown) provided in the vapor deposition source holder is opened during this film formation, the sublimated vapor deposition material scatters toward the substrate and is vapor-deposited on the substrate to form a light emitting layer (hole transport layer, hole injection layer). , An electron transport layer, and an electron injection layer) are formed.

After the evaporation is completed, the first container is lifted from the evaporation source holder, conveyed to the installation chamber, and placed on the lower container (not shown) of the second container installed on the rotary table 713. , And is closed by the upper container 721a.
At this time, the first container, the upper container, and the lower container,
It is preferable to seal with the conveyed combination. In this state, the installation chamber 805 is set to atmospheric pressure, the second container is taken out of the installation chamber, the fastener 702 is fixed, and the material is transported to the material manufacturer.

FIG. 9 shows an example of an installation chamber in which a plurality of first containers 911 can be installed. In FIG. 9A, a first container 911 or a second container 912 is provided in the installation chamber 905.
A rotary table 907 on which a plurality of containers can be placed, a transport mechanism 902b for transporting the first container, and a lifting mechanism 9
02a and the deposition source holder 903 in the film forming chamber 906.
And a mechanism (not shown here) for moving the vapor deposition holder. FIG. 9A shows a top view.
(B) shows a perspective view of the inside of the installation room. In addition, the installation chamber 905 is provided with the gate valve 90 so as to be adjacent to the film formation chamber 906.
It is possible to control the atmosphere of the installation chamber by means of controlling the atmosphere through the gas introduction port. Although not shown, a location for disposing the removed upper portion (second container) 912 is separately provided.

Alternatively, a robot is provided in a pretreatment chamber (installation chamber) connected to the film formation chamber, and the deposition source is moved from the film formation chamber to the pretreatment chamber, and the vapor deposition material is set in the deposition source in the pretreatment chamber. Good. That is, it may be a manufacturing apparatus in which the vapor deposition source moves to the pretreatment chamber. By doing so, the vapor deposition source can be set while maintaining the cleanliness of the film forming chamber.

In addition, this embodiment is the embodiment and the first embodiment.
It is possible to freely combine with any one of the items 1 to 5.

[Embodiment 7] In this embodiment, an example of a multi-chamber type manufacturing apparatus in which production from the first electrode to sealing is fully automated is shown in FIG.

FIG. 10 shows gates 500a to 500y,
Transfer chambers 502, 504a, 508, 514, 518,
Delivery chambers 505, 507, 511, charging chamber 501, first film forming chamber 506H, second film forming chamber 506B, third film forming chamber 506G, fourth film forming chamber 506R, fifth film forming chamber 506
E and other film forming chambers 509, 510, 512, 51
3, 531, 532 and an installation chamber 526 for installing a vapor deposition source
R, 526G, 526B, 526E, 526H, pretreatment chambers 503a and 503b, sealing chamber 516, mask stock chamber 524, sealing substrate stock chamber 530, cassette chambers 520a and 520b, and tray mounting stage 52.
1 is a multi-chamber manufacturing apparatus having an ejection chamber 519. The transfer chamber 504a has a substrate 504c.
A transport mechanism 504b for transporting the sheet is provided, and the other transport chambers are similarly provided with the transport mechanisms.

Hereinafter, a substrate provided with an anode (first electrode) and an insulator (partition wall) covering the end of the anode in advance is shown in FIG.
The procedure for carrying in the manufacturing apparatus shown in FIG. Note that in the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (current control TFTs) and other thin film transistors (switching TFTs and the like) connected to the anode are provided in advance on the substrate, and the thin film transistors are formed. A drive circuit is also provided. Further, also in the case of manufacturing a simple matrix light emitting device, it can be manufactured by the manufacturing apparatus shown in FIG.

First, the substrate is set in the cassette chamber 520a or the cassette chamber 520b. If the substrate is a large substrate (for example, 300 mm x 360 mm), the cassette chamber 52
Set to 0b, and then use a normal substrate (for example, 127mm x 127m
In the case of m), after being set in the cassette chamber 520a, it is conveyed to the tray mounting stage 521 and a plurality of substrates are set in the tray (for example, 300 mm × 360 mm).

The substrate set in the cassette chamber (the substrate provided with the anode and the insulator covering the end of the anode) is transported to the transport chamber 518.

Before setting in the cassette chamber, the surface of the first electrode (anode) is made of a porous sponge (typically, a surfactant) to reduce the point defects. Specifically made of PVA (polyvinyl alcohol),
It is preferable to remove dust on the surface by washing with nylon or the like). As a cleaning mechanism, a roll brush (PV that contacts the surface of the substrate by rotating around an axis parallel to the surface of the substrate
A cleaning device having a disk brush (made of PVA) which contacts the surface of the substrate while rotating around an axis perpendicular to the surface of the substrate may be used. Further, before forming a film containing an organic compound, it is preferable that annealing for degassing is performed in a vacuum in order to remove moisture and other gas contained in the substrate, and the film is connected to the transfer chamber 518. Then, it may be transferred to a baking chamber 523 where annealing is performed.

Next, the substrate is transferred from the transfer chamber 518 provided with the substrate transfer mechanism to the preparation chamber 501. In the manufacturing apparatus of the present embodiment, the robot provided in the transfer chamber 518 can reverse the front and back of the substrate, and can reverse the substrate to the loading chamber 501 and carry it in. In this embodiment, the transfer chamber 5
The atmospheric pressure of 18 is always maintained. The preparation room 501 is
It is connected to a vacuum exhaust processing chamber, and it is preferable to introduce an inert gas to atmospheric pressure after vacuum exhausting.

Next, the transfer chamber 5 connected to the preparation chamber 501
02. It is preferable that the transfer chamber 502 be evacuated in advance to maintain a vacuum so that moisture and oxygen are not present in the transfer chamber 502 as much as possible.

The vacuum evacuation processing chamber is provided with a magnetic levitation type turbo molecular pump, cryopump or dry pump. As a result, the ultimate vacuum of the transfer chamber connected to the charging chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as a gas to be introduced. As these gases introduced into the apparatus, those highly purified by a gas purifier before being introduced into the apparatus are used. Therefore,
It is necessary to provide a gas purifier so that the gas is highly purified and then introduced into the vapor deposition apparatus. As a result, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

When it is desired to remove a film containing an organic compound formed at an unnecessary place, the film may be transported to the pretreatment chamber 503a and the stack of organic compound films may be selectively removed.
The pretreatment chamber 503a has a plasma generating means, and
Dry etching is performed by exciting plasma of one or more kinds selected from r, H, F, and O to generate plasma. By using a mask, only unnecessary portions can be selectively removed. Also,
A UV irradiation mechanism may be provided in the pretreatment chamber 503a so that ultraviolet irradiation can be performed as the surface treatment of the anode.

Further, in order to eliminate the shrink, it is preferable to perform vacuum heating immediately before vapor deposition of the film containing the organic compound, and the film is conveyed to the pretreatment chamber 503b to thoroughly remove moisture and other gases contained in the substrate. In order to remove the above, the annealing for degassing is performed under vacuum (5 × 10 ⁻³ Torr (0.66
5 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa). In the pretreatment chamber 503b, a flat plate heater (typically, a sheath heater) is used to uniformly heat a plurality of substrates. A plurality of flat plate heaters are installed, and heating can be performed from both sides so that the substrate is sandwiched by the flat plate heaters, and of course, heating can be performed from one side. In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition wall, some organic resin materials may easily adsorb moisture, and degassing may occur. Therefore, before forming a layer containing an organic compound, 100 ℃ ~
250 ° C, preferably 150 ° C to 200 ° C, for example 30
After heating for more than a minute, it is effective to perform natural cooling for 30 minutes to perform vacuum heating for removing adsorbed moisture.

Next, after the above-mentioned vacuum heating is performed, the substrate is transferred from the transfer chamber 502 to the transfer chamber 505, and is further transferred from the transfer chamber 505 to the transfer chamber 504 without being exposed to the atmosphere.
The substrate is transported to a.

After that, the substrate is appropriately transported to the film formation chambers 506R, 506G, 506B, and 506E connected to the transport chamber 504a, and the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, or the electron transport layer. An organic compound layer made of a low molecule to be an injection layer is appropriately formed. Alternatively, the substrate can be transferred from the transfer chamber 102 to the film formation chamber 506H and vapor deposition can be performed.

Further, in the film forming chamber 512, a hole injection layer made of a polymer material may be formed by an ink jet method, a spin coating method or the like under atmospheric pressure or reduced pressure. Alternatively, the substrate may be placed vertically and the film may be formed by an inkjet method in a vacuum. On the first electrode (anode), a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), a polyaniline / camphorsulfonic acid aqueous solution (which functions as a hole injection layer (anode buffer layer)) PANI / CSA), PTPDES, Et-P
You may apply | coat and bake TPDEK, PPBA, etc. on the whole surface. The baking is preferably performed in the baking chamber 523. When the hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, the flatness is improved, and the coverage and the film thickness uniformity of the film formed thereon are improved. be able to. Particularly, since the film thickness of the light emitting layer is uniform, uniform light emission can be obtained. In this case, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately after forming the hole injection layer by the coating method and immediately before forming the film by the vapor deposition method. The vacuum treatment may be performed in the pretreatment chamber 503b. For example, after cleaning the surface of the first electrode (anode) with a sponge, it is loaded into a cassette chamber, transported to a film deposition chamber 512, and poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) is spin-coated. Aqueous solution (PEDOT / P
After applying SS) to the entire surface with a film thickness of 60 nm, bake chamber 52
Transferred to 3 and calcinated at 80 ° C for 10 minutes, 200 ° C, 1
The main baking is performed for a certain period of time, and the pre-treatment chamber 503b is transferred to vacuum heating (170 ° C., heating 30 minutes, cooling 30 minutes) immediately before vapor deposition.
After that, the light emitting layer may be formed by a vapor deposition method without being exposed to the atmosphere by being transferred to the film formation chambers 506R, 506G, and 506B. In particular, when an ITO film is used as the anode material and unevenness or fine particles are present on the surface, these effects can be reduced by setting the film thickness of PEDOT / PSS to 30 nm or more.

Since PEDOT / PSS does not have very good wettability when applied onto the ITO film, the PEDOT / PSS solution is applied by the spin coating method for the first time and then washed with pure water to wet it. To improve the quality, and again PEDOT / PSS
It is preferable that the solution is applied by the spin coating method for the second time and baked to form a film with good uniformity. After the first application, the surface can be modified by once washing with pure water, and the effect of removing fine particles can be obtained.

When PEDOT / PSS is formed by the spin coating method, the film is formed on the entire surface, so that the end face and the peripheral portion of the substrate, the terminal portion, the connection region between the cathode and the lower wiring, etc. are selectively removed. It is preferable that the pretreatment chamber 503a be selectively removed by O ₂ ashing using a mask in the pretreatment chamber 503a.

Here, the film forming chambers 506R, 506G, 50
6B, 506E, and 506H will be described.

The film forming chambers 506R, 506G, 506B,
Movable evaporation source holders are installed at 506E and 506H. A plurality of vapor deposition source holders are prepared, and a plurality of containers (crucibles) enclosing the EL material are appropriately provided and installed in the film forming chamber in this state. It is possible to selectively form a film by setting a substrate by a face-down method, performing positional alignment of a vapor deposition mask with a CCD or the like, and performing vapor deposition by a resistance heating method. The vapor deposition mask is stocked in the mask stock chamber 524, and is appropriately transported to the film forming chamber when performing vapor deposition. In addition, since the mask stock chamber is free during vapor deposition, it is possible to stock substrates after film formation or treatment. The film formation chamber 532 is a preliminary vapor deposition chamber for forming a layer containing an organic compound and a metal material layer.

The EL system is preferably installed in these film forming chambers using the manufacturing system described below. That is, EL
It is preferable to perform film formation using a container (typically a crucible) in which the material is stored in advance by a material manufacturer. Further, it is preferable that the crucible is installed without being exposed to the atmosphere, and when the crucible is transported from the material manufacturer, it is preferable that the crucible is introduced into the film forming chamber while being sealed in the second container. Desirably, each film forming chamber 506R, 506G, 50
Installation chambers 526R, 526G, 526B, 526H having vacuum evacuation means connected to 6B, 506H, 506E,
526E is set to a vacuum or an inert gas atmosphere, the crucible is taken out from the second container in the atmosphere, and the crucible is installed in the film forming chamber. Note that FIG. 8 or FIG. 9 shows an example of an installation chamber. By doing so, the crucible and the EL material housed in the crucible can be prevented from being contaminated.
The installation chambers 526R, 526G, 526B, 526
A metal mask may be stocked in H and 526E.

Film forming chambers 506R, 506G, 506B, 5
By appropriately selecting the EL material to be installed in 06H and 506E, a light emitting element which emits light of a single color (specifically white) or full color (specifically red, green, blue) is formed as the entire light emitting element. can do. For example, when forming a green light emitting element, the film formation chamber 506H
A hole transporting layer or a hole injecting layer, a light emitting layer (G) in a film forming chamber 506G, an electron transporting layer or an electron injecting layer in a film forming chamber 506E, and then a cathode to form a green light emitting element. Obtainable. For example, in the case of forming a full-color light-emitting element, a hole-transporting layer or a hole-injecting layer, a light-emitting layer (R), an electron-transporting layer, or an electron-injecting layer is sequentially stacked in a deposition chamber 506R using an evaporation mask for R. And the film forming chamber 506G
And using a vapor deposition mask for G, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked, and a vapor deposition mask for B is used in a film formation chamber 506B. A full-color light emitting device can be obtained by sequentially stacking a hole transport layer or a hole injection layer, a light emitting layer (B), an electron transport layer or an electron injection layer, and then forming a cathode.

The organic compound layer emitting white light is
In the case of stacking light emitting layers having different emission colors,
Three wavelength type containing three primary colors of red, green and blue,
2 using the complementary color relationship of blue / yellow or blue green / orange
Broadly divided into wavelength types. It is also possible to form the white light emitting element in one film forming chamber. For example, when a white light emitting device is obtained using a three-wavelength type, a deposition chamber having a plurality of vapor deposition source holders having a plurality of crucibles is prepared, and an aromatic diamine (TPD) is used as the first vapor deposition source holder. , the second evaporation source holder p-EtTAZ, third evaporation source the holder Alq _3, EL material in the fourth evaporation source holder with added NileRed is a red light emitting pigment in Alq _3, the fifth Alq ₃ is enclosed in the evaporation source holder and installed in each film forming chamber in this state. Then, the first to fifth vapor deposition source holders start moving in order, vapor deposition is performed on the substrates, and the substrates are stacked. Specifically, by heating, the T
The PD is sublimed and deposited on the entire surface of the substrate. Then the second
P-EtTAZ is sublimated from the evaporation source holder of No. 3, Alq ₃ is sublimated from the _third evaporation source holder, Alq ₃ : NileRed is sublimated from the fourth evaporation source holder, and Alq ₃ is evaporated from the fifth evaporation source holder. Sublimed and evaporated on the entire surface of the substrate. After that, a white light emitting element can be obtained by forming a cathode.

After appropriately stacking layers containing an organic compound by the above steps, the substrate is transferred from the transfer chamber 504a to the delivery chamber 507 and further transferred from the delivery chamber 507 to the transfer chamber 508 without being exposed to the atmosphere. Transport.

Next, the substrate is transferred to the film forming chamber 510 by the transfer mechanism installed in the transfer chamber 508 to form a cathode. This cathode is an inorganic film (MgAg, MgIn, CaF ₂ , L formed by a vapor deposition method using resistance heating.
An alloy such as iF or CaN, or a film formed by co-evaporating an element belonging to Group 1 or 2 of the periodic table and aluminum, or a laminated film thereof. Alternatively, the cathode may be formed by using a sputtering method.

In the case of manufacturing a top emission type light emitting device, the cathode is preferably transparent or semitransparent, and the thin film of the metal film (1 nm to 10 nm) or the thin film of the metal film (1 nm to 1 nm) is used. It is preferable to use a laminate of 10 nm) and a transparent conductive film as a cathode. In this case, a film formed of a transparent conductive film (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), etc.) in the film forming chamber 509 by using a sputtering method. Should be formed.

Through the above steps, a light emitting element having a laminated structure is formed.

Further, the film forming chamber 51 connected to the transfer chamber 508.
3 and is made of a silicon nitride film or a silicon nitride oxide film.
A protective film may be formed and sealed. Here, the deposition chamber
A target made of silicon or silica oxide
Target made of element or target made of silicon nitride
Is equipped with For example, a target made of silicon
The atmosphere in the deposition chamber is nitrogen atmosphere or nitrogen and
A silicon nitride film is formed on the cathode by forming an atmosphere containing gas.
A film can be formed. Also, carbon is the main component
Thin film (DLC film, CN film, amorphous carbon film)
It may be formed as a protective film, and a CVD method is separately used.
A film formation chamber may be provided. Diamond-like carbon film
(Also called DLC film) is a plasma CVD method (typical
Specifically, RF plasma CVD method, microwave CVD method,
Electron cyclotron resonance (ECR) CVD method, thermal filler
Ment CVD method), combustion flame method, sputtering method, ion
It can be formed by beam evaporation method, laser evaporation method, etc.
Wear. The reaction gas used for film formation is hydrogen gas and hydrocarbon.
System gas (eg CH_Four, C₂H₂, C₆H₆Etc.)
Ionization by glow discharge and negative self-bias
Ions are accelerated and collide with the cathode thus formed to form a film.
Also, the CN film uses C as a reaction gas.₂H_FourGas and N ₂With gas
It may be formed by using. The DLC film and the CN film are
An insulating film that is transparent or semitransparent to visible light. Yes
Transparent to visible light has a visible light transmittance of 80 to 100%.
Is translucent to visible light.
It means that the transmittance is 50 to 80%.

In this embodiment, a protective layer formed by stacking a first inorganic insulating film, a stress relaxation film and a second inorganic insulating film is formed on the cathode. For example, after forming the cathode, the film is transferred to the film formation chamber 513 to form the first inorganic insulating film,
The film is transported to 32 to form a stress relaxation film having hygroscopicity and transparency (such as a layer containing an organic compound) by a vapor deposition method, and then transported to the film forming chamber 513 again to form a second inorganic insulating film. Good.

Next, the substrate on which the light emitting element is formed is transferred from the transfer chamber 508 to the delivery chamber 511 and further transferred from the delivery chamber 511 to the transfer chamber 514 without being exposed to the atmosphere. Then, the substrate on which the light emitting element is formed is transferred to the transfer chamber 514.
From the sheet to the sealing chamber 516.

The sealing substrate is set in the load chamber 517 from the outside and prepared. Note that it is preferable to perform annealing in vacuum in advance in order to remove impurities such as moisture.
When a sealing material is formed on the sealing substrate to be bonded to the substrate provided with the light emitting element, the sealing material is formed in the sealing chamber, and the sealing substrate having the sealing material formed thereon is sealed substrate stock chamber. Transport to 530. Note that a desiccant may be provided on the sealing substrate in the sealing chamber. Here, an example in which the sealing material is formed on the sealing substrate is shown, but the sealing material is not particularly limited, and the sealing material may be formed on the substrate on which the light emitting element is formed.

Next, in the sealing chamber 516, the substrate and the sealing substrate are attached to each other, and the pair of attached substrates is attached to the sealing chamber 5
UV light is irradiated by an ultraviolet irradiation mechanism provided in 16 to cure the sealing material. Although the ultraviolet curable resin is used as the sealant here, it is not particularly limited as long as it is an adhesive.

Next, the pair of bonded substrates are transferred from the sealing chamber 516 to the transfer chamber 514 and from the transfer chamber 514 to the extraction chamber 519, and taken out.

As described above, by using the manufacturing apparatus shown in FIG. 10, since it is not necessary to expose the light emitting element to the atmosphere until the light emitting element is completely enclosed in the sealed space, a highly reliable light emitting apparatus can be manufactured. Becomes In the transfer chamber 514, the substrate is transferred at atmospheric pressure, but in order to remove water,
Although it is possible to repeat the vacuum and the nitrogen atmosphere at the atmospheric pressure, the transfer chambers 502, 504a, 50
It is desirable that 8 is always kept in vacuum. The transfer chamber 518 is always at atmospheric pressure.

Although not shown here, a control device for controlling the work in each processing chamber, a control device for transferring between the processing chambers, and a route for moving the substrate to each processing chamber are provided. It is equipped with a control controller that controls and realizes automation.

In the manufacturing apparatus shown in FIG. 10, a substrate provided with a transparent conductive film (or a metal film (TiN) as an anode is carried in to form a layer containing an organic compound, and then a transparent or semitransparent cathode is formed. (For example, a thin metal film (Al, A
It is also possible to form a top emission type (or dual emission) light emitting element by forming (g) and a laminated layer of a transparent conductive film. Note that a top emission type light emitting element refers to an element in which light emitted from an organic compound layer is extracted through a cathode.

In the manufacturing apparatus shown in FIG. 10, a substrate provided with a transparent conductive film as an anode is carried in, a layer containing an organic compound is formed, and then a cathode made of a metal film (Al, Ag) is formed. Thus, a bottom emission type light emitting element can be formed. Note that the bottom emission type light-emitting element refers to an element in which light emitted in the organic compound layer is extracted from the anode, which is a transparent electrode, toward the TFT, and further passes through the substrate.

This embodiment can be freely combined with the embodiment mode, Embodiment 1, Embodiment 2, Embodiment 3, Embodiment 5, or Embodiment 6.

[0180]

By performing vapor deposition using the film forming apparatus of the present invention, film thickness uniformity, vapor deposition material utilization efficiency, and throughput can be significantly improved.

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment.

FIG. 2 is a cross-sectional view showing a first embodiment.

FIG. 3 is a diagram showing a top view of a light emitting device.

FIG. 4 is a cross-sectional view showing a third embodiment.

FIG. 5 is a diagram showing a multi-chamber type manufacturing apparatus. (Example 4)

FIG. 6 is a diagram showing an example of moving a deposition source holder.

FIG. 7 is a diagram showing a fifth embodiment.

FIG. 8 is a diagram showing crucible transportation in an installation room.

FIG. 9 is a diagram showing crucible transfer to a vapor deposition source holder in an installation chamber.

FIG. 10 is a diagram showing a multi-chamber type manufacturing apparatus. (Example 7)

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Claims (7)

[Claims] 1. A film forming apparatus for forming a film on the substrate by depositing an evaporation material from an evaporation source arranged facing a substrate, wherein the film forming chamber in which the substrate is arranged has an evaporation source. And a means for moving the vapor deposition source and a means for rotating the substrate, wherein the vapor deposition source is moved, and at the same time, the substrate is rotated to perform film formation. Manufacturing equipment having. 2. A manufacturing apparatus comprising a load chamber, a transfer chamber connected to the load chamber, and a film forming chamber connected to the transfer chamber, wherein the film forming chamber includes an evaporation source and A manufacturing apparatus having a film forming apparatus, comprising: a means for moving an evaporation source and a means for rotating a substrate, wherein the evaporation source is moved, and at the same time, the substrate is rotated to perform film formation. . 3. A manufacturing apparatus having a film forming apparatus according to claim 1, wherein a distance between the vapor deposition source and the substrate is 30 cm or less. 4. The manufacturing method according to claim 1, wherein the film forming chamber is connected to an evacuation processing chamber for evacuating the film forming chamber. apparatus. 5. The manufacturing apparatus according to claim 1, wherein the vapor deposition source moves in the X direction or the Y direction. 6. A manufacturing apparatus comprising: a load chamber, a transfer chamber connected to the load chamber, and a film forming chamber connected to the transfer chamber, wherein the film forming chamber includes an evaporation source and A film forming apparatus comprising: a means for moving an evaporation source; and a means for fixing a substrate, wherein the substrate is fixed and the evaporation source is moved in the X direction or the Y direction to form a film. Manufacturing equipment having. 7. A manufacturing apparatus having a film forming apparatus according to claim 1, wherein the vapor deposition material is an organic compound material.