JP4408019B2 - Manufacturing method of EL element - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a manufacturing system for manufacturing a light emitting device having an EL element on a substrate. In particular, the present invention relates to a system for producing a layer made of a high-purity organic compound. The present invention also relates to a method for operating a manufacturing apparatus, and a light-emitting device formed by the operation method is also one aspect of the present invention. In addition, it relates to organic compound recycling systems.
[0002]
[Prior art]
In recent years, research on a light-emitting device having an EL element as a light-emitting element has been activated, and in particular, a light-emitting device using an organic material as an EL material has attracted attention. This light emitting device is also called an organic EL display or an organic light emitting diode.
[0003]
Note that the EL element includes a layer containing an organic compound (hereinafter, referred to as an EL layer) from which luminescence generated by applying an electric field is obtained, an anode, and a cathode. Luminescence in an organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The light-emitting device manufactured by the film formation method can be applied to either light emission.
[0004]
Unlike the liquid crystal display device, the light-emitting device is a self-luminous type and has a feature that there is no problem of viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and use in various forms has been proposed.
[0005]
In addition, as a light-emitting device, a method of forming an EL layer between two types of stripe electrodes provided so as to be orthogonal to each other (simple matrix method), or a pixel electrode connected to a TFT and arranged in a matrix There are two types of methods (active matrix method) in which an EL layer is formed between the counter electrode.
[0006]
An EL element has a structure in which an EL layer is sandwiched between a pair of electrodes, but the EL layer usually has a laminated structure. Typically, a laminated structure of “hole transport layer / light emitting layer / electron transport layer” can be given. This structure has very high luminous efficiency.
[0007]
In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are sequentially laminated on the anode. Good structure. You may dope a fluorescent pigment | dye etc. with respect to a light emitting layer. These layers may all be formed using a low molecular weight material, or a part of the layers may be formed using a high molecular weight material.
[0008]
Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are all included in the EL layer.
[0009]
In this specification, an EL element refers to an EL material and a layer containing an organic material or an inorganic material for injecting carriers into the EL material (hereinafter referred to as an EL layer) between two electrodes (an anode and a cathode). A light-emitting element having a structure, and a diode composed of an anode, a cathode and an EL layer.
[0010]
An EL element using an organic EL material generally has a structure using an EL layer made of a combination of an organic EL material and an organic material. The organic EL material and the organic material are roughly classified into a low molecular (monomer) material and a high molecular (polymer) material. Of these, the low molecular material is mainly formed by vapor deposition.
[0011]
The biggest problem in the practical application of EL elements is that the lifetime of the elements is insufficient. In addition, the deterioration of the element appears in the form of light emission for a long time and a non-light emitting region (dark spot) is widened. The cause is deterioration of the EL layer.
[0012]
The EL material forming the EL layer is easily deteriorated by impurities such as oxygen and water. In addition, it is conceivable that other impurities are included in the EL material to affect the deterioration of the EL layer.
[0013]
[Problems to be solved by the invention]
In the case where a main process in which impurities such as oxygen and water may be mixed is given to the EL material to be vapor-deposited, a process of setting the EL material in a vapor deposition apparatus before vapor deposition, a vapor deposition process, and the like can be considered.
[0014]
Usually, the container for storing the EL material is placed in a brown glass bottle and closed with a plastic lid (cap). It is also conceivable that the container for storing the EL material is insufficiently sealed.
[0015]
Conventionally, when a film is formed by a vapor deposition method, a predetermined amount of evaporating material placed in a container (glass bottle) is taken out, and a container (typical) placed at a position facing a film formation in a vapor deposition apparatus. However, there is a risk that impurities may be mixed in this transfer operation. That is, oxygen, water, and other impurities, which are one cause of deterioration of the EL element, may be mixed.
[0016]
When transferring from a glass bottle to a container, for example, it is conceivable to carry out by a human hand in a pretreatment chamber provided with a glove or the like in a vapor deposition apparatus. However, when the pretreatment chamber is equipped with a glove, it cannot be evacuated and work is performed at atmospheric pressure, and it is difficult to reduce moisture and oxygen in the pretreatment chamber as much as possible even in a nitrogen atmosphere. Met. Although it is conceivable to use a robot, since the evaporation material is in the form of powder, it is difficult to produce a robot that can be transferred. Therefore, it has been difficult to fully automate the process from the process of forming the EL layer on the lower electrode to the process of forming the upper electrode, and to make a consistent closed system capable of avoiding impurity contamination.
[0017]
In addition, it is possible to further increase the purity by evaporating the evaporation material delivered from the material manufacturer at the light emitting device manufacturer. However, it takes time and effort to purify it. May get mixed in.
[0018]
In addition, the EL material is very expensive, and the gram unit price is several steps higher than the gram unit price of gold, and it is desired to use it as efficiently as possible.
[0019]
The present invention provides a system that maintains the EL material with high purity, fully automates the process from the process of forming the EL layer on the lower electrode to the process of forming the upper electrode to improve the throughput, and avoids contamination by impurities. It is an object to provide a consistent closed system that can do this.
[0020]
Furthermore, another object of the present invention is to use an EL material efficiently.
[0021]
In addition, another object of the present invention is to improve the reliability and luminance of a light-emitting element using a high-purity EL material.
[0022]
[Means for Solving the Problems]
The present invention does not use a conventional container, typically a brown glass bottle, as a container for storing the EL material, but directly stores the EL material in a container to be installed in the vapor deposition apparatus, and performs vapor deposition after transportation. A manufacturing system is used to prevent impurities from being mixed into a high-purity EL material. Further, when EL materials are directly stored, the obtained EL materials may not be stored separately, but sublimation purification may be performed directly on a container to be installed in the vapor deposition apparatus. The present invention makes it possible to cope with further ultra-high purity of EL materials in the future.
[0023]
The operation of directly storing the EL material in the container installed in the vapor deposition apparatus is preferably requested by a light emitting device manufacturer using the vapor deposition apparatus to a material manufacturer that manufactures or sells the EL material. The present invention provides a manufacturing system that achieves an extremely high-purity EL material by linking a light-emitting device manufacturer and a material manufacturer and completes a highly reliable light-emitting device using the EL material. The system of the present invention eliminates used glass bottles that become waste, making it an environmentally friendly process. Further, by refining or storing the EL material directly in the container at the material manufacturer, only a necessary amount can be sold, and the relatively expensive EL material can be used efficiently. That is, it is possible to eliminate the excess or shortage of the EL material in the glass bottle as in the prior art.
[0024]
Furthermore, the system of the present invention can eliminate the work of transferring from a glass bottle to a container. By eliminating the transfer operation, EL material is not spilled due to some mistakes during transfer. In addition, by eliminating the task of transferring the EL material to the container by the light-emitting device manufacturer, the light-emitting device manufacturer simply installs the container in which the EL material has been purified or stored in advance in the vapor deposition device. Increase throughput.
[0025]
According to the present invention, it is possible to realize a manufacturing system that is fully automated to improve throughput, and to realize a consistent closed system that can avoid contamination with impurities.
[0026]
Also, no matter how high-purity EL material is provided by the material manufacturer, as long as there is a conventional transfer work at the light-emitting device manufacturer, there is a risk of contamination, and the purity of the EL material cannot be maintained, There was a limit in purity. According to the present invention, the light emitting device manufacturer and the material manufacturer cooperate to reduce the contamination of impurities, thereby maintaining the extremely high purity EL material obtained by the material manufacturer, and performing vapor deposition at the light emitting device manufacturer without reducing the purity as it is. be able to.
[0027]
The configuration of the invention disclosed in this specification is as shown in FIG.
In a material manufacturer, the first stage of refining or storing the vapor deposition material in the first container, and further sealing the first container containing the vapor deposition material with a second container;
A second stage of transporting the second container to a light emitting device manufacturer;
In the light-emitting device manufacturer, a third stage in which the second container is introduced into a manufacturing apparatus, and the first container is taken out from the second container and arranged,
And a fourth stage in which vapor deposition is performed by heating the first container in the manufacturing apparatus.
[0028]
In addition, it is needless to say that the material manufacturer does not need to prepare and prepare the container, and it may be outsourced. It is desirable to request the apparatus manufacturer who provided the vapor deposition apparatus to the light emitting apparatus manufacturer for the operation of preparing the container to be installed in the vapor deposition apparatus. In the present invention, a device system, a light emitting device manufacturer, and a material manufacturer are linked to achieve an extremely high purity EL material, and a manufacturing system for completing a highly reliable light emitting device using the EL material is provided. To do.
[0029]
The structure of another invention disclosed in the present specification is summarized as shown in FIG.
A first stage of transporting a first container and a second container from a device manufacturer to a material manufacturer;
In the material manufacturer, a second stage of purifying or storing the vapor deposition material in the first container, and further sealing the first container containing the vapor deposition material with the second container;
A third stage of transporting the second container to a light emitting device manufacturer;
In the light emitting device manufacturer, the fourth stage of introducing the second container into the manufacturing apparatus, taking out the first container from the second container,
And a fifth stage in which vapor deposition is performed by heating the first container in the manufacturing apparatus.
[0030]
Moreover, the light-emitting device maker may prepare the operation | work which produces the container installed in the said vapor deposition apparatus.
[0031]
The structure of another invention disclosed in the present specification is summarized as shown in FIG.
A first stage of transporting the second container and the first container from the light emitting device manufacturer to the material manufacturer;
In the material manufacturer, a second stage of purifying or storing the vapor deposition material in the first container, and further sealing the first container containing the vapor deposition material with the second container;
A third stage of transporting the second container to the light emitting device manufacturer;
In the light emitting device manufacturer, the fourth stage of introducing the second container into the manufacturing apparatus, taking out the first container from the second container,
And a fifth stage in which vapor deposition is performed by heating the first container in the manufacturing apparatus.
[0032]
Further, in the formation of the EL layer by the vapor deposition method, not all the EL material accommodated in the container is vapor deposited, and after vapor deposition, the EL material that has not been vapor deposited adheres to the container. It is good also as a manufacturing system which makes a material manufacturer collect | recover this container, takes out EL material which remained in the container, and reuses it. Furthermore, after taking out EL material which remained in the container, it is good also as a manufacturing system which refine | purifies and improves purity and reuses.
[0033]
The configuration of another invention disclosed in the present specification is summarized as shown in FIG.
A first stage of transporting a first container and a second container from a light emitting device manufacturer to a material manufacturer;
In the material manufacturer, a second stage of purifying or storing the vapor deposition material in the first container, and further sealing the first container containing the vapor deposition material with the second container;
A third stage of transporting the second container to the light emitting device manufacturer;
In the light emitting device manufacturer, the fourth stage of introducing the second container into the manufacturing apparatus, taking out the first container from the second container,
A fifth stage in which vapor deposition is performed by heating the first container in the manufacturing apparatus;
And taking out the first container from the manufacturing apparatus, and transporting the first container sealed with the second container from the light emitting apparatus manufacturer to the material manufacturer. It is a manufacturing system.
[0034]
In the above structure, after vapor deposition, the vapor deposition material adhering to the inside of the first container is collected by the material manufacturer and reused. If it is to be recovered, it is desirable for the subsequent purification of the EL material that it is sealed with the second container to prevent impurities from being mixed.
[0035]
In each of the above structures, the first container is stored in the second container in an inert gas atmosphere or in a vacuum, and after the deposition material is purified or stored, the first container is disposed in the manufacturing apparatus without touching the atmosphere. It is characterized by being. By touching the atmosphere, water and oxygen are prevented from adhering to the outer wall of the first container. In the present invention, since the EL material is directly purified or stored in a container to be installed in the vapor deposition apparatus and transported, it is preferable to prevent contamination of the container as much as possible. If water or oxygen adheres to the outer wall of the container and is installed in a vapor deposition apparatus, it may be mixed during vapor deposition.
[0036]
Further, in each of the above configurations, the manufacturing apparatus includes a plurality of processing chambers provided with a vacuum exhaust unit, a processing chamber for taking out the first container from the second container, and a vacuum vapor deposition apparatus. It is characterized by that. The manufacturing apparatus may be a multi-chamber manufacturing apparatus or an in-line manufacturing apparatus. Specifically, a second container that seals the first container is introduced into a first chamber (processing chamber) filled with an inert gas, and the inside of the first chamber is evacuated and evacuated. After removing the impurities, the inert gas is introduced to return to atmospheric pressure, the first container is taken out from the second container, the inside of the first chamber is evacuated, and the first container connected to the first chamber is removed. What is necessary is just to convey a 1st container to 2 chambers (vacuum vapor deposition apparatus evacuated previously), and to install in a desired position. Needless to say, all of these operations can be performed by a robot and automated. Further, the first container may be taken out from the second container in a vacuum.
[0037]
In each of the above configurations, the first container is not particularly limited, but it is preferable to use a crucible with relatively good EL material usage efficiency. Moreover, it may be a vapor deposition boat instead of the crucible. The first container may be a crucible that can be sealed with an attached lid.
[0038]
Moreover, in each said structure, although the said 2nd container will not be specifically limited if it is a container which has light-shielding property, It is preferable that it is a container which can be pressure-reduced and pressurized.
[0039]
In each of the above structures, it is preferable that the material maker cleans the first container or the second container before storing the EL material.
[0040]
Further, not only the EL material can be reused, but also a manufacturing system in which the container is cleaned and reused by the material manufacturer. By doing this, the number of containers required can be saved and the EL material can also be saved.
[0041]
The structure of another invention disclosed in the present specification is summarized as shown in FIG.
A first stage of transporting a container from a light emitting device manufacturer to a material manufacturer;
In the material manufacturer, a second stage of refining or storing the vapor deposition material in the container;
A third stage of transporting the container to the light emitting device manufacturer;
In the light emitting device manufacturer, a fourth stage of introducing the container into the manufacturing device;
A fifth stage of performing vapor deposition by heating the container in the manufacturing apparatus;
And a sixth stage of taking out the container from the manufacturing apparatus, transporting the container from the light emitting device manufacturer to the material manufacturer, and storing the vapor deposition material in the container again. .
[0042]
Moreover, in the said structure, it may replace with the said container and it may be set as a 1st container and may be sealed with a 2nd container at the time of conveyance. If the first container is to be reused, it is desirable that the second container be sealed to prevent impurities from being mixed for recovery of the EL material later. In addition, if the EL material is to be collected, it is desirable for the subsequent purification of the EL material that the second material is sealed with the second container to prevent the impurities from being mixed.
[0043]
In the above configuration, the container is a crucible, or the container is a crucible that can be sealed by an attached lid.
[0044]
Further, in the above configuration, in the sixth stage, the material manufacturer collects the vapor deposition material adhering to the inside of the container and reuses (recycles) it. Further, in the above configuration, the container is cleaned by the material manufacturer. In the above configuration, the manufacturing apparatus is a vacuum evaporation apparatus.
[0045]
In each of the above configurations, the manufacturing apparatus is a multi-chamber manufacturing apparatus having at least one vacuum deposition apparatus as shown in FIG.
[0046]
In addition, a production method in which vapor deposition is performed by performing sublimation purification directly on a container (such as a crucible), and the container (such as a crucible) is installed in a vapor deposition apparatus is also one aspect of the present invention.
A first step of refining the vapor deposition material in the container;
A second step of installing the container facing the deposition object in the vapor deposition apparatus;
And a third step of performing vapor deposition by heating the vessel installed in the vapor deposition apparatus.
[0047]
In this specification, the crucible is a cylindrical container having a relatively large opening formed of a material such as a sintered body of BN, a composite sintered body of BN and AlN, quartz, or graphite. It can withstand high temperature, high pressure and reduced pressure. FIG. 12A shows an example of the appearance. In the vapor deposition apparatus, the vapor deposition source includes a crucible, a heater disposed outside the crucible via a heat equalizing member, a heat insulating layer disposed outside the heater, an outer cylinder housing these, The cooling pipe is turned to the outside of the cylinder, and a shutter device that opens and closes the opening of the outer cylinder including the opening of the crucible.
[0048]
Further, as a typical example, FIG. 12B schematically shows a state where the vacuum evaporation apparatus is installed. The vacuum deposition apparatus includes a vacuum chamber in which the inside can be maintained at a predetermined pressure-reduced state by a vacuum exhaust means (not shown), a substrate holder installed in an upper portion of the chamber, and a plurality of opposingly arranged below the substrate holder A vapor deposition source is included. The substrate holder includes a holding portion (not shown) for holding the substrate, and a rotation axis for rotating the substrate is provided in the vertical direction at the center of the upper surface of the substrate holder. FIG. 12B shows an example in which three crucibles are set on the base plate, but there is no particular limitation, and one, two, or four or more may be used.
[0049]
In addition, the configuration of another invention of the present invention is as follows:
A first container containing an organic material is sealed with a second container;
The second container is introduced into a manufacturing apparatus having a vacuum evacuation means, the first container is taken out from the second container and placed, and then the first container is heated to perform vapor deposition. This is a method for operating a manufacturing apparatus.
[0050]
Further, in the above structure, the first container is characterized in that an organic material is purified by sublimation on an inner wall. In the above structure, the organic material is an evaporation material.
[0051]
In addition, the light-emitting device using the operation method of the manufacturing apparatus having the above structure is formed using a high-purity material, and thus has high reliability and luminance.
[0052]
In the present invention, the evaporation method may be a resistance heating method or an evaporation method using an electron gun (also referred to as an EB evaporation method), and the material is not limited to a material containing an organic compound. The present invention can also be applied to inorganic materials (including alloy materials) serving as an anode. In particular, the present invention is effective when a metal material that may be altered when exposed to the atmosphere (oxygen, moisture, etc.) is formed as a cathode or an anode.
[0053]
In addition, the present invention mainly uses a powdery organic material that can be deposited, but can also be applied to a liquid polymer material. That is, the present invention can also be applied to film forming methods such as a spin coating method, a casting method, an LB method, and an ink jet method. In the case of using a polymer material, a liquid polymer material obtained at a high purity by a material maker is used by using a syringe, a first container for containing a liquid continuously, and a piston (syringe). What is necessary is just to accommodate by the pressure reduction by moving this piston, and also to accommodate in the 2nd container which seals the 1st container further.
[0054]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0055]
(Embodiment 1)
FIG. 1 shows an explanatory diagram of the production system of the present invention.
[0056]
In FIG. 1, 11a is a first container (crucible), and 11b is a second container for isolating the first container from the atmosphere and preventing it from contamination. Reference numeral 12 denotes a powdered EL material purified to a high purity. Reference numeral 13 denotes a vacuumable chamber, 14 denotes a heating means, 15 denotes an object to be deposited, and 16 denotes a deposited film. Further, 18 is a material manufacturer, a manufacturer (typically a raw material handling company) that produces and refines organic compound materials that are vapor deposition materials, and 19 is a light emitting device manufacturer having a vapor deposition device. A manufacturer of light emitting devices (typically a production factory).
[0057]
The flow of the manufacturing system of the present invention will be described below.
[0058]
First, an order 10 is made from the light emitting device manufacturer 19 to the material manufacturer 18. The material manufacturer 18 prepares the first container 11 a and the second container 11 b according to the order 10. Then, the material manufacturer refines or stores the ultra-high purity EL material 12 in the first container 11a while paying sufficient attention to the mixing of impurities (oxygen, moisture, etc.) in the clean room environment. After that, it is preferable that the material container 18 seals the first container 11a with the second container 11b so that excessive impurities do not adhere inside or outside the first container in the clean room environment. When sealing, the inside of the second container 11b is preferably filled with vacuum or an inert gas. It is preferable to clean the first container 11a and the second container 11b before purifying or storing the ultra-high purity EL material 12.
[0059]
In the present invention, the first container 11a is placed in the chamber as it is when vapor deposition is performed later. In addition, the second container 11b may be a packaging film having a barrier property that blocks the mixing of oxygen and moisture, but it has a cylindrical or box-like strong light-shielding property so that it can be automatically taken out. It is preferable to use a container having
[0060]
Next, the first container 11a is conveyed 17 from the material maker 18 to the light emitting device maker 19 in a state where the first container 11a is sealed in the second container 11b.
[0061]
Next, the first container 11a is introduced into the processing chamber 13 that can be evacuated while being sealed in the second container 11b. The processing chamber 13 is a vapor deposition chamber in which a heating unit 14 and a substrate holder (not shown) are installed. Thereafter, the inside of the processing chamber 13 is evacuated to a clean state in which oxygen and moisture are reduced as much as possible. Then, the first container 11a is taken out from the second container 11b, and the heating means 14 is used without breaking the vacuum. A vapor deposition source can be prepared by installing. A deposition target (here, a substrate) 15 is installed so as to face the first container 11a.
[0062]
Next, the vapor deposition film 16 can be formed on the surface of the deposition object 15 provided opposite to the vapor deposition source by applying heat to the vapor deposition material by a heating means 14 such as resistance heating. The vapor deposition film 16 thus obtained does not contain impurities, and when a light emitting element is completed using the vapor deposition film 16, high reliability and high luminance can be realized.
[0063]
In this way, the first container 11a is introduced into the vapor deposition chamber 13 without being exposed to the atmosphere, and vapor deposition can be performed while maintaining the purity at the stage where the vapor deposition material 12 is stored by the material manufacturer. Further, by storing the EL material 12 directly in the first container 11a by the material manufacturer, only a necessary amount can be provided to the light emitting device manufacturer, and a relatively expensive EL material can be used efficiently.
[0064]
In the vapor deposition method, there is a method of increasing the use efficiency as shown in FIG. As shown in FIG. 13, after performing the first deposition in a state where a new EL material 902 is put in the crucible 901 during the maintenance of the apparatus (FIG. 13A), the deposition is performed as shown in FIG. 13B. Residue 903 remains without. Then, when the next vapor deposition is performed, the EL material 904 is newly replenished and the vapor deposition is performed, and the subsequent vapor deposition increases the use efficiency by repeating FIGS. 13B and 13C until maintenance is performed. However, in this method, residues can cause contamination. Further, since replenishment is performed by an operator, oxygen or moisture may be mixed into the vapor deposition material and the purity may be lowered. An example of the amount replenished by this method is shown in FIG. Also, crucibles deposited several times are discarded during maintenance. In order to prevent contamination of impurities, a new EL material may be put into the crucible every time vapor deposition is performed, and the crucible may be abandoned every time vapor deposition is performed, but the manufacturing cost increases.
[0065]
Conventionally, the glass bottle storing the vapor deposition material can be eliminated, and further, the operation of transferring from the glass bottle to the crucible by the above-described manufacturing system can be eliminated, and contamination with impurities can be prevented. In addition, throughput is improved.
[0066]
According to the present invention, it is possible to realize a manufacturing system that is fully automated and improves throughput, and that it is possible to realize a consistent closed system that can avoid contamination of the deposition material 12 purified by the material manufacturer 18. .
[0067]
(Embodiment 2)
In the first embodiment, an example in which a high-purity EL material is maintained by cooperation between the two parties is shown. Here, an example in which a high-purity EL material is maintained by cooperation between the three parties is shown.
[0068]
FIG. 2 shows an explanatory diagram of the production system of the present invention.
[0069]
In FIG. 2, 21a is a first container (crucible), and 21b is a second container for isolating the first container from the atmosphere and preventing it from contamination. Reference numeral 22 denotes a powdered EL material purified to a high purity. Reference numeral 23 denotes a vacuumable chamber, 24 denotes a heating means, 25 denotes an object to be deposited, and 26 denotes a deposited film. Reference numeral 27 denotes an apparatus manufacturer, which is a manufacturer that manufactures a vapor deposition apparatus. 28 is a material maker, a manufacturer (typically a raw material handling company) that produces and refines organic compound materials that are vapor deposition materials. Reference numeral 29 denotes a light emitting device manufacturer having a vapor deposition device, which is a light emitting device manufacturer (typically a production factory).
[0070]
The flow of the manufacturing system of the present invention will be described below.
[0071]
First, an order 32 is made from the light emitting device manufacturer 29 to the material manufacturer 28. The material manufacturer 28 receives the order 32 and places an order 33 with the device manufacturer 27. Here, the device manufacturer 27 is a supplier who manufactures a vapor deposition device in which the first container 21 a can be placed in the vapor deposition source and carries the vapor deposition device into the light emitting device manufacturer 29. According to the order 33, the device manufacturer 27 produces the first container 21a and the second container 21b. Here, an example in which the first container 21a and the second container 21b are manufactured by the same apparatus manufacturer 27 is shown, but they may be manufactured by different apparatus manufacturers. It is preferable to clean the first container 21a and the second container 21b at the stage of production.
[0072]
The first container 21a is installed in the chamber as it is when vapor deposition is performed later. In addition, the second container 21b may be a packaging film having a barrier property that blocks the mixing of oxygen and moisture, but in order to enable automatic removal, a cylindrical or box-like strong light-shielding property. It is preferable to use a container having After that, it is preferable that the device maker 27 seals the first container 21a with the second container 21b so that excessive impurities do not adhere inside or outside the first container in the clean room environment.
[0073]
Next, the first container 21a is transported 30 from the apparatus maker 27 to the material maker 28 in a state where the first container 21a is sealed in the second container 21b.
[0074]
Next, the material maker purifies or stores the ultra-high purity EL material 22 in the first container 21a while paying sufficient attention to the mixing of impurities (oxygen, moisture, etc.) in the clean room environment. After that, it is preferable that the material container 28 seals the first container 21a with the second container 21b so that excessive impurities do not adhere inside or outside the first container in the clean room environment. When sealing, the inside of the second container 21b is preferably filled with a vacuum or an inert gas. Note that it is preferable to clean the first container 21a and the second container 21b again before purifying or storing the ultra-high purity EL material 22.
[0075]
Next, the first container 21a is conveyed 31 from the material maker 28 to the light emitting device maker 29 in a state where the first container 21a is sealed in the second container 21b.
[0076]
Next, the first container 21a is introduced into a processing chamber capable of being evacuated while being sealed in the second container 21b. Thereafter, the processing chamber is evacuated to a clean state in which oxygen and moisture are reduced as much as possible, and then a high-purity inert gas (nitrogen or the like) is introduced to bring it to atmospheric pressure. Next, the first container 21a is taken out from the second container 21b, and again brought into a vacuum state. Then, the first container 21a is introduced into the vapor deposition chamber 23 connected to the processing chamber without breaking the vacuum, and heated. A vapor deposition source can be prepared by installing in the means 24. Note that a deposition object (here, a substrate) 25 is placed so as to face the first container 21a.
[0077]
Next, the vapor deposition material 26 can be formed on the surface of the deposition object 25 provided opposite to the vapor deposition source by applying heat to the vapor deposition material by a heating means 24 such as resistance heating. The vapor deposition film 26 thus obtained does not contain impurities, and when a light emitting element is completed using the vapor deposition film 26, high reliability and high luminance can be realized.
[0078]
In this way, the first container 21a is introduced into the vapor deposition chamber 23 without being exposed to the atmosphere, and vapor deposition can be performed while maintaining the purity at the stage where the vapor deposition material 22 is stored by the material manufacturer. Further, by storing the EL material 22 directly in the first container 21a by the material manufacturer, only a necessary amount can be provided to the light emitting device manufacturer, and a relatively expensive EL material can be used efficiently.
[0079]
Conventionally, the glass bottle storing the vapor deposition material can be eliminated, and further, the operation of transferring from the glass bottle to the crucible by the above-described manufacturing system can be eliminated, and contamination with impurities can be prevented. In addition, throughput is improved.
[0080]
According to the present invention, it is possible to realize a manufacturing system that is fully automated and improves throughput, and that it is possible to realize a consistent closed system that can avoid contamination of the vapor deposition material 22 purified by the material manufacturer 28. .
[0081]
Here, an example in which the light emitting device manufacturer 29 orders 32 from the material manufacturer 28 is shown, but the light emitting device manufacturer 29 may order from the device manufacturer 27.
[0082]
(Embodiment 3)
Here, unlike Embodiment 1, an example in which a light-emitting device manufacturer prepares a container is shown.
[0083]
FIG. 3 shows an explanatory diagram of the production system of the present invention.
[0084]
In FIG. 3, 41a is a first container (crucible), and 41b is a second container for isolating the first container from the atmosphere and preventing it from contamination. Reference numeral 42 denotes a powdered EL material purified to a high purity. Reference numeral 43 denotes a vacuumable chamber, 44 denotes a heating means, 45 denotes an object to be deposited, and 46 denotes a deposited film. Reference numeral 47 denotes a material manufacturer, which is a manufacturer (typically a raw material handling company) that produces and refines organic compound materials that are vapor deposition materials. Reference numeral 48 denotes a light emitting device manufacturer having a vapor deposition device, which is a light emitting device manufacturer (typically a production factory).
[0085]
First, the light emitting device manufacturer 48 prepares or manufactures the first container 41a and the second container 41b. It is preferable to clean the first container 41a and the second container 41b at the stage of production.
[0086]
Next, the first container 41 a and the second container 41 b are transported 40 from the light emitting device manufacturer 48 to the material manufacturer 47. It is preferable that the first container 41a is transported 40 in a state where the first container 41a is sealed in the second container 41b so that excessive impurities do not adhere inside or outside the first container. This transport 40 also serves as an order, and the material manufacturer 47 who receives the transport should be careful to mix impurities (oxygen, moisture, etc.) in the clean room environment according to the number of first containers sent. The first container 41a is taken out from the second container 41b and the ultrahigh purity EL material 42 is purified or stored in the first container 41a. After that, it is preferable that the material container 47 seals the first container 41a with the second container 41b so that excessive impurities do not adhere inside or outside the first container in the clean room environment. When sealing, the inside of the second container 41b is preferably filled with vacuum or an inert gas. It is preferable to clean the first container 41a and the second container 41b before purifying or storing the ultra-high purity EL material 42.
[0087]
Next, the first container 41a is transported 49 from the material maker 47 to the light emitting device maker 48 in a state where the first container 41a is still sealed in the second container 41b.
[0088]
Next, the first container 41a is introduced into a processing chamber capable of being evacuated while being sealed in the second container 41b. Thereafter, the processing chamber is evacuated to a clean state in which oxygen and moisture are reduced as much as possible, and then a high-purity inert gas (nitrogen or the like) is introduced to bring it to atmospheric pressure. Next, the first container 41a is taken out from the second container 41b, and after making the vacuum state again, the first container 41a is introduced into the vapor deposition chamber 43 connected to the processing chamber without breaking the vacuum, and heated. A vapor deposition source can be prepared by installing in the means 44. Note that a deposition target (here, a substrate) 45 is provided so as to face the first container 41a.
[0089]
Next, the deposition material 46 can be formed on the surface of the deposition object 45 provided opposite to the deposition source by applying heat to the deposition material by a heating means 44 such as resistance heating. The vapor deposition film 46 thus obtained does not contain impurities, and when the light emitting element is completed using the vapor deposition film 46, high reliability and high luminance can be realized.
[0090]
In this way, the first container 41a is introduced into the vapor deposition chamber 43 without being exposed to the atmosphere, and vapor deposition can be performed while maintaining the purity at the stage where the vapor deposition material 42 is stored by the material manufacturer. Further, by directly storing the EL material 42 in the first container 41a by the material manufacturer, only a necessary amount can be provided, and a relatively expensive EL material can be used efficiently.
[0091]
(Embodiment 4)
Here, an example that is partially different from the second embodiment is shown. In addition, since it is the same as Embodiment 2 except a different location, the same code | symbol is used.
[0092]
FIG. 4 is an explanatory diagram of the manufacturing system of the present embodiment.
[0093]
In FIG. 4, 50 is the EL material remaining without being deposited. In the present embodiment, the EL material remaining in the first container 21a is collected 51 by the material manufacturer 28 without being contaminated, and the EL material is reused.
[0094]
Since the flow of the manufacturing system of the present embodiment is the same as that of the second embodiment until the vapor deposition film 26 is obtained, it is omitted here.
[0095]
After obtaining the vapor deposition film 26, the EL material 50 that has not been vapor deposited remains solidified at the bottom of the first container 21a. In general, vapor deposition tends to largely depend on the distance from the interface of the EL material 22 to the deposition target, the opening of the crucible, and the temperature distribution of the crucible. Therefore, since the EL material remaining on the bottom of the first container 21a is different in distance to the object to be deposited from that before the deposition, avoid performing the deposition until it is completely removed from the first container. It is preferable. In addition, it is preferable to avoid performing vapor deposition until it is completely eliminated even if a margin is considered. That is, the vapor deposition method uses only one-third to one-fourth or less of the entire EL material first put in the crucible, so that it can be said that the utilization efficiency is very low. Furthermore, the remaining EL material is wasted.
[0096]
Therefore, in the present embodiment, as shown in FIG. 4, the first container 21 a is taken out from the vapor deposition apparatus, and the material manufacturer 28 collects 51. The recovered EL material 50 is desirably purified again to increase the purity and reused. It is desirable to prevent impurities from entering the EL material 50 as much as possible before purification. Therefore, when taking out, it is desirable to seal in the second container 21b without touching the atmosphere. In addition, it is preferable to collect 51 in a state where the first container 21a remains sealed in the second container 21b.
[0097]
Thus, by collecting the EL material 50 in the first container 21a by the material manufacturer, it is possible to eliminate waste of resources and to efficiently use or reuse the relatively expensive EL material.
[0098]
Further, this embodiment mode can be freely combined with any one of Embodiment Modes 1 to 3.
[0099]
(Embodiment 5)
In this embodiment, FIG. 5 shows a manufacturing system for reusing EL materials and crucibles.
[0100]
In FIG. 5, 61 is a container (crucible). Reference numeral 60 denotes a powdered EL material purified to a high purity. Reference numeral 63 denotes a vacuum chamber, 64 is a heating means, 65 is an object to be deposited, and 66 is a deposited film. 67 is the EL material remaining without being deposited. Reference numeral 68 denotes a material manufacturer who is a manufacturer (typically a raw material handling company) that produces and refines organic compound materials that are vapor deposition materials. Reference numeral 69 denotes a light emitting device manufacturer having a vapor deposition device, which is a light emitting device manufacturer (typically a production factory).
[0101]
The flow of the recycling system of the present invention will be described below.
[0102]
First, the powdered EL material 60 purified to a high purity by the material manufacturer 68 is purified or manufactured.
[0103]
Next, the purified EL material 62 is stored in the container 61 designated by the material manufacturer 68 as the light emitting device manufacturer 69. Further, the EL material 60 may be purified directly in the container 61. The container 61 is a container that can be set as it is in the vapor deposition source of the vapor deposition apparatus, typically a crucible, a vapor deposition boat, or the like.
[0104]
Next, the container 61 in which the EL material 62 is stored is transported 70 to the light emitting device maker 69 and installed in the vapor deposition chamber 63.
[0105]
Next, the vapor deposition material 66 can be formed on the surface of the deposition target 65 provided opposite to the vapor deposition source by applying heat to the vapor deposition material by a heating means 64 such as resistance heating. The vapor deposition film 66 thus obtained does not contain impurities, and when a light emitting element is completed using the vapor deposition film 66, high reliability and high luminance can be realized.
[0106]
Next, the container 61 is taken out from the vapor deposition apparatus, and the material manufacturer 68 collects 71. Conventionally, the crucible was discarded after vapor deposition.
[0107]
Next, the container 61 is cleaned, and the recovered EL material 67 is purified again to increase its purity and reused. It is desirable to prevent impurities from entering the EL material 67 as much as possible before purification. In addition, it is preferable to collect 71 while the container 61 remains sealed.
[0108]
In this way, by collecting the EL material 67 in the container 61 by the material manufacturer 68 and further reusing the container 61, it is possible to eliminate waste of resources and to efficiently use or reuse the relatively expensive EL material. .
[0109]
Further, this embodiment can be freely combined with any one of Embodiments 1 to 4.
[0110]
The present invention having the above-described configuration will be described in more detail with the following examples.
[0111]
(Example)
[Example 1]
In this example, an example of the second container shown in Embodiment Modes 1 to 4 is shown in FIG.
[0112]
FIG. 6 is a cross-sectional view of the second container containing the first container.
[0113]
In FIG. 6, reference numeral 301 denotes a first container, typically a crucible, in which an EL material 302 is accommodated. The crucible 301 can be lightly closed with a crucible lid 303. The second container is composed of two parts, and the upper part 304a and the lower part 304b are sealed with an O-ring 305 or the like. The upper part 304a is provided with a spring 306 so that the upper lid 307 is movable. The lower part 304b is also provided with a spring 308 so that the lower lid 309 is movable. The crucible 301 is arranged so as to be sandwiched between the upper lid 307 and the lower lid 309. The lower lid 309 is provided with a convex portion (not shown) for fixing the crucible 301, and the crucible lid 303 is pressed by the upper lid 307. Note that the crucible lid and the upper lid may be integrated.
[0114]
The interiors of the second containers 304a and 304b are filled with an inert gas (typically nitrogen).
[0115]
When this second container is placed in a processing chamber capable of being evacuated and brought into a vacuum state, the upper part 304a of the second container is detached by the restoring force of the spring due to the difference between the internal pressure and the external pressure. At the same time, the crucible 301 is pushed out by the restoring force of the spring. As described above, the second container shown in FIG. 6 is a container that can be opened relatively easily by changing the pressure from the atmospheric pressure to the vacuum state. Therefore, work after opening, for example, work for removing the upper part 304a and the crucible lid 303 and work for taking out the first container can be performed by a robot or the like. Further, the second container shown in FIG. 6 can be a container that is resistant to impact and suitable for conveyance.
[0116]
This embodiment can be freely combined with any one of Embodiment Modes 1 to 5.
[0117]
[Example 2]
Here, a typical stacked structure of a light-emitting element will be described with reference to FIGS.
[0118]
The light emission mechanism of organic EL is by injecting electrons and holes (holes) from the outside and exciting the emission center by their recombination energy. A typical structure of the organic EL element is a three-layer structure. Here, a two-layer structure (electron transport layer, hole transport layer) will be described. As the electron transport layer, tris (8-quinolinolato) aluminum (hereinafter referred to as Alq). _Three And so on). Examples of the hole transport layer include 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD). Here, the light emission mechanism will be described below using an example in which ITO is used as the anode and MgAg is used as the cathode.
[0119]
When a DC voltage is applied from the outside to the EL element having the above two-layer structure, holes are injected from the ITO electrode serving as the anode, transported to the interface with the organic compound layer, and injected into the organic compound layer. On the other hand, electrons are injected from the MgAg electrode, transported in the organic compound layer, reach the vicinity of the interface, and recombine with holes on the light emitting molecule. As a result, an excited state of the light emitting molecule is generated, and light emission similar to the fluorescence spectrum of the molecule occurs.
[0120]
FIG. 7A is a schematic view illustrating an example of a stacked structure of EL elements. In FIG. 7A, 200 is an anode (or cathode), 201 is an EL layer, 202 is a cathode (or anode), and 203 is a protective film. Further, when light is emitted in the direction of the arrow in the figure (when light emission is allowed to pass through the cathode 202), as 202, a translucent conductive material or an extremely thin metal film (an alloy such as MgAg, MgIn, AlLi, CaN) Or a film formed by co-evaporation of an element belonging to Group 1 or Group 2 of the periodic table and aluminum) or a laminate thereof.
[0121]
As the protective film 203, an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method) or a DLC film (Diamond Like Carbon) containing hydrogen may be used. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. A silicon nitride target may be used. Further, the protective film 203 may be formed using a film formation apparatus using remote plasma. Moreover, when light emission is allowed to pass through the protective film, the protective film is preferably as thin as possible.
[0122]
In addition, a silicon oxide film can be formed before the protective film and function as a buffer layer. When a silicon nitride film is formed in contact with a film made of a transparent conductive film by a sputtering method, the silicon oxide film is included in the transparent conductive film. Impurities (In, Sn, Zn, etc.) may be mixed into the silicon nitride film. However, the silicon oxide film can be prevented from being mixed into the silicon nitride film by forming the silicon oxide film serving as a buffer layer therebetween. By forming the buffer layer with the above structure, impurities (In, Sn, etc.) from the transparent conductive film can be prevented from mixing, and an excellent protective film free of impurities can be formed.
[0123]
With such a structure, the light-emitting element can be protected and reliability can be improved.
[0124]
FIG. 7B is a schematic view illustrating another example of a stacked structure of EL elements. In FIG. 7B, 400 is an anode (or cathode), 401 is an EL layer, 402 is a cathode (or anode), and 403 is a protective film. In the case where light is emitted in the direction of the arrow in the drawing (when light emission is allowed to pass through the electrode 400), it is preferable to use a light-transmitting conductive material as 400.
[0125]
In this embodiment, as a vapor deposition source of the vapor deposition apparatus, a first vapor deposition source including a hole injecting organic compound, a second vapor deposition source including a hole transporting organic compound, and light emission are provided. A third vapor deposition source comprising a hole transporting organic compound serving as a host for the organic compound; a fourth vapor deposition source comprising a light emitting organic compound; and a fifth vapor deposition comprising a blocking organic compound. And a sixth evaporation source including an electron transporting organic compound is shown.
[0126]
Note that the deposition source can be controlled by a microcomputer so that the deposition rate can be controlled.
[0127]
Further, the number of organic compounds provided in one vapor deposition source is not necessarily one, and a plurality of organic compounds may be provided. For example, in addition to one kind of material provided as a light-emitting organic compound in the vapor deposition source, another organic compound that can serve as a dopant may be provided together. Note that a known material may be used as an organic compound that forms an organic compound film that has these multiple functions and emits red light.
[0128]
In this example, copper phthalocyanine (hereinafter referred to as Cu-Pc) and a hole transporting organic compound provided in the second vapor deposition source are used as the hole injecting organic compound provided in the first vapor deposition source. 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α-NPD), an organic compound serving as a host for the third vapor deposition source (hereinafter referred to as “α-NPD”) 4,4′-dicarbazole-biphenyl (hereinafter referred to as CBP) as the host material, and 2,3,7,8,12,13,17 as the luminescent organic compound provided in the fourth evaporation source. , 18-octaethyl-21H, 23H-porphyrin-platinum (hereinafter referred to as PtOEP), as a blocking organic compound provided for the fifth vapor deposition source, bathocuproine (hereinafter referred to as BCP), sixth steam Tris (8-quinolinolato) aluminum (hereinafter referred to as Alq) is an electron transporting organic compound provided for the source. _Three Is used).
[0129]
By depositing these organic compounds in order, an organic compound film composed of a region having a hole injecting property, a hole transporting property, a light emitting property, and an electron transporting property can be formed on the anode. it can.
[0130]
In the above, the case where an organic compound film that emits red light is formed has been shown. However, when an organic compound film that emits green light is formed, Cu as a hole-injecting organic compound included in the first vapor deposition source is used. -Pc, hole-transporting organic compound provided in the second deposition source, MTDATA, hole-transporting organic compound provided in the third deposition source, α-NPD, hole provided in the fourth deposition source CBP as a transporting host material, Tris (2-phenylpyridine) iridium (Ir (ppy) as a light-emitting organic compound for the fifth evaporation source _Three ), BCP as the blocking organic compound provided for the sixth vapor deposition source, Alq as the organic compound for electron transport provided for the seventh vapor deposition source _Three May be used. By vapor-depositing these organic compounds in order, an organic compound film composed of a region having a hole transporting property, a light emitting property, a blocking property, and an electron transporting property can be formed on the anode.
[0131]
Moreover, when forming the organic compound film | membrane which shows blue light emission, as a hole-injection organic compound with which a 1st vapor deposition source is equipped, Cu-Pc, as a luminescent organic compound with which a 2nd vapor deposition source is equipped, (alpha) -NPD, a blocking organic compound for the third deposition source, BCP, an electron transporting organic compound for the fourth deposition source, Alq _Three May be used. By vapor-depositing these organic compounds in order, an organic compound film composed of a region having a hole injecting property, a light emitting property, a blocking property, and an electron transporting property can be formed on the anode.
[0132]
As the protective film 403, an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method) or a DLC film containing hydrogen may be used. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. A silicon nitride target may be used. Further, the protective film 403 may be formed using a film formation apparatus using remote plasma. In addition, a silicon oxide film can be formed before the protective film to function as a buffer layer.
[0133]
With such a structure, the light-emitting element can be protected and reliability can be improved.
[0134]
In addition, this embodiment can be applied not only to an active matrix display device but also to a passive display device.
[0135]
Further, this embodiment can be freely combined with Embodiment Modes 1 to 5 or Embodiment 1.
[0136]
[Example 3]
In this embodiment, FIG. 8 shows an example of a multi-chamber manufacturing apparatus in which the production up to the upper electrode is fully automated.
[0137]
8, 100a to 100k, 100m to 100p, 100r to 100u are gates, 101 is a preparation chamber, 119 is a take-out chamber, 102, 104a, 108 and 114 are transfer chambers, 105, 107 and 111 are delivery chambers, 106R, 106B, 106G, 106H, 109, 110, 113 are film forming chambers, 103 is a pretreatment chamber, 117 is a sealing substrate loading chamber, 115 is a dispenser chamber, and 116 is a sealing chamber.
[0138]
Hereinafter, a procedure for carrying a substrate provided with TFTs in advance to the manufacturing apparatus shown in FIG. 8 and forming a laminated structure shown in FIG.
[0139]
First, the substrate provided with the TFT and the anode 200 is set in the preparation chamber 101. The charging chamber 101 is connected to a vacuum evacuation treatment chamber, and after evacuating, it is preferable to introduce an inert gas to an atmospheric pressure. Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. In advance, the vacuum is maintained by evacuation so that moisture and oxygen do not exist in the transfer chamber as much as possible.
[0140]
Further, the transfer chamber 102 is connected to an evacuation processing chamber that evacuates the transfer chamber. As the vacuum evacuation processing chamber, a magnetic levitation type turbo molecular pump, a cryopump, or a dry pump is provided. As a result, the ultimate vacuum in the transfer chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0141]
Further, in order to remove moisture and other gases contained in the substrate, it is preferable to perform annealing for deaeration in a vacuum, and the substrate is transferred to a pretreatment chamber 103 connected to the transfer chamber 102, where annealing is performed. Just do it. Further, if it is necessary to clean the surface of the anode, it may be transferred to a pretreatment chamber 103 connected to the transfer chamber 102 and cleaned there.
[0142]
If necessary, an organic compound layer made of a polymer may be formed on the entire surface on the anode. A film forming chamber for forming an organic compound layer made of a polymer may be provided in the manufacturing apparatus of FIG. In the case of forming by a spin coating method, an ink jet method, or a spray method, the substrate is set with the deposition surface of the substrate facing upward at atmospheric pressure. The delivery chamber 105 is provided with a substrate reversing mechanism, and the substrate is reversed appropriately. In addition, after film formation using an aqueous solution, the film is preferably transferred to the pretreatment chamber 103 where heat treatment is performed in vacuum to vaporize moisture.
[0143]
Next, after the substrate 104c is transferred from the transfer chamber 102 to the delivery chamber 105 without being exposed to the atmosphere, the substrate 104c is transferred to the transfer chamber 104, and is transferred to the film formation chamber 106R by the transfer mechanism 104b. An EL layer that emits red light is appropriately formed. Here, an example of forming by vapor deposition is shown. The film formation chamber 106R is set with the film formation surface of the substrate facing downward in the delivery chamber 105. Note that the film formation chamber is preferably evacuated before the substrate is carried in.
[0144]
For example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Deposition is performed in the film forming chamber 106R evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening a shutter (not shown) at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). Note that the temperature of the substrate (T ₁ ) Is 50 to 200 ° C, preferably 65 to 150 ° C.
[0145]
In this embodiment, a crucible in which a vapor deposition material is stored in advance by a material manufacturer is set in the film forming chambers 106R, 106B, 106G, and 106H. When setting, it is preferable not to touch the atmosphere, and when transporting from the material manufacturer, the crucible is preferably introduced into the film forming chamber while being sealed in the second container as shown in Example 1. . Desirably, a chamber having a vacuum evacuation unit is provided connected to the film formation chamber 106R, where the crucible is taken out from the second container in a vacuum or an inert gas atmosphere, and the crucible is installed in the film formation chamber. By doing so, the crucible and the EL material housed in the crucible can be prevented from contamination.
[0146]
When three types of EL layers are formed in order to obtain a full color, after the film formation in the film formation chamber 106R, the film formation is performed sequentially in each of the film formation chambers 106G and 106B, and red, green, and blue are formed. An organic compound film that emits light may be formed as appropriate.
[0147]
Once the desired EL layer 201 is obtained on the anode 200, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and further transferred from the delivery chamber 107 without being exposed to the atmosphere. The substrate is transferred to the chamber 108.
[0148]
Next, the film is transferred to the film formation chamber 110 by a transfer mechanism installed in the transfer chamber 108, a thin metal layer is formed over the EL layer 201, and then transferred to the film formation chamber 109 to form a transparent conductive film. A cathode 202 made of a laminate of a thin metal layer and a transparent conductive film is appropriately formed. Here, the film formation chamber 110 is a vapor deposition apparatus provided with Mg and Ag as a vapor deposition source, and the film formation chamber 109 is a sputtering apparatus having at least a target made of a transparent conductive material.
[0149]
Next, the protective film 203 is formed by being transferred from the transfer chamber 108 to the film formation chamber 113 without being exposed to the air. Here, a sputtering apparatus provided with a target made of silicon or a target made of silicon nitride in the film formation chamber 113 is used. The silicon nitride film can be formed by setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0150]
Through the above steps, the stacked structure illustrated in FIG. 7A, that is, a light-emitting element covered with a protective film is formed over the substrate.
[0151]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 108 to the delivery chamber 111 without being exposed to the atmosphere, and further transferred from the delivery chamber 111 to the transfer chamber 114.
[0152]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 114 to the sealing chamber 116. Note that a sealing substrate provided with a sealant is preferably prepared in the sealing chamber 116.
[0153]
The sealing substrate is set in the sealing substrate load chamber 117 from the outside. In order to remove impurities such as moisture, it is preferable to perform annealing in a vacuum in advance, for example, annealing in the sealing substrate load chamber 117. When a sealing material is formed on the sealing substrate, the transfer chamber 114 is set to atmospheric pressure, and then the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115 to provide a light emitting element. And a sealing substrate on which the sealing material is formed is transported to the sealing chamber 116.
[0154]
Next, in order to deaerate the substrate provided with the light-emitting element, after annealing in a vacuum or an inert atmosphere, the sealing substrate provided with the sealant and the substrate on which the light-emitting element is formed are attached to each other . Further, the sealed space between the substrates is filled with hydrogen or an inert gas. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0155]
Next, the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the sealing material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0156]
Next, the pair of bonded substrates is transferred from the sealing chamber 116 to the transfer chamber 114 and then transferred from the transfer chamber 114 to the take-out chamber 119 and taken out.
[0157]
As described above, by using the manufacturing apparatus illustrated in FIG. 8, it is not necessary to expose the light-emitting element to the outside until the light-emitting element is completely enclosed in the sealed space, so that a highly reliable light-emitting device can be manufactured. Moreover, since the crucible in which the vapor deposition material is stored in advance may be installed, the installation of the vapor deposition material can be automated. Note that in the transfer chamber 114, vacuum and a nitrogen atmosphere at atmospheric pressure are repeated, but it is desirable that the transfer chambers 102, 104a, and 108 are always kept in vacuum.
[0158]
Note that an in-line film deposition apparatus can also be used.
[0159]
Hereinafter, a procedure in which a substrate on which a TFT and an anode are provided in advance is carried into the manufacturing apparatus shown in FIG. 8 to form a laminated structure shown in FIG.
[0160]
First, the substrate provided with the TFT and the anode 400 is set in the preparation chamber 101. It is preferable to evacuate in advance and introduce an inert gas to atmospheric pressure so that moisture and oxygen are not present in the charging chamber 101 as much as possible. Next, the material is transferred to a transfer chamber 102 connected to the preparation chamber 101. A transparent conductive material is used as a material for forming the anode 400, and an indium / tin compound, zinc oxide, or the like can be used. Next, the sample is transferred to a pretreatment chamber 103 connected to the transfer chamber 102. In this pretreatment chamber, the anode surface may be cleaned, oxidized, or heated. As the cleaning of the anode surface, ultraviolet irradiation in a vacuum or oxygen plasma treatment is performed to clean the anode surface. In addition, the oxidation treatment may be performed by irradiating ultraviolet rays in an atmosphere containing oxygen while heating at 100 to 120 ° C., and is effective when the anode is an oxide such as ITO (or IZO). The heat treatment may be performed at a heating temperature of 50 ° C. or higher, preferably 65 to 150 ° C. that the substrate can withstand in vacuum, and is formed on the substrate by impurities such as oxygen and moisture attached to the substrate. Impurities such as oxygen and moisture in the film are removed. In particular, since the EL material is easily deteriorated by impurities such as oxygen and water, it is effective to heat in vacuum before vapor deposition.
[0161]
If necessary, the substrate 104c is transferred from the transfer chamber 102 to the delivery chamber 105 without being exposed to the atmosphere, further transferred to the transfer chamber 104a, and then transferred to the film formation chamber 106H by the transfer mechanism 104b. A hole transport layer, a hole injection layer, or the like, which is one layer of the EL layer, is stacked as appropriate. Here, an example of forming by vapor deposition is shown. The film formation chamber 106H is set with the film formation surface of the substrate facing downward. Note that the film formation chamber is preferably evacuated before the substrate is carried in.
[0162]
Next, the film is transferred to the film formation chamber 106 </ b> R, and an EL layer that emits red light is appropriately formed over the anode 400. Here, an example of forming by vapor deposition is shown. In the film formation chamber 106R, the substrate delivery chamber 105 is set with the film formation surface of the substrate facing downward. Note that the film formation chamber is preferably evacuated before the substrate is carried in.
[0163]
For example, the degree of vacuum is 5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Deposition is performed in the film forming chamber 106R evacuated to Pa. At the time of vapor deposition, the organic compound is vaporized in advance by resistance heating, and is scattered in the direction of the substrate by opening a shutter (not shown) at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening (not shown) provided in a metal mask (not shown). Note that the temperature of the substrate (T ₁ ) Is 50 to 200 ° C, preferably 65 to 150 ° C.
[0164]
In addition, a crucible in which a vapor deposition material is stored in advance by a material manufacturer is set in the film forming chamber. When setting, it is preferable not to touch the atmosphere, and when transporting from the material manufacturer, the crucible is preferably introduced into the film forming chamber while being sealed in the second container as shown in Example 1. . Desirably, a chamber having a vacuum evacuation unit is provided connected to the film formation chamber 106R, where the crucible is taken out from the second container in a vacuum or an inert gas atmosphere, and the crucible is installed in the film formation chamber. By doing so, the crucible and the EL material housed in the crucible can be prevented from contamination.
[0165]
When three types of EL layers are formed in order to achieve full color, after film formation in the film formation chamber 106R, film formation is sequentially performed in the film formation chambers 106G and 106B to emit red, green, and blue light. An organic compound film showing the above may be formed as appropriate.
[0166]
Once the desired EL layer 401 is obtained on the anode 400, the substrate is then transferred from the transfer chamber 104a to the delivery chamber 107 without being exposed to the atmosphere, and further transferred from the delivery chamber 107 without being exposed to the atmosphere. The substrate is transferred to the chamber 108.
[0167]
If necessary, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as a hole injection layer may be formed on the entire surface of the anode 400. A film forming chamber for forming an organic compound layer made of a polymer may be provided in the manufacturing apparatus of FIG. In the case of forming by a spin coating method, an ink jet method, or a spray method, the substrate is set with the deposition surface of the substrate facing upward at atmospheric pressure. The substrate is appropriately reversed in the delivery chamber 105. In addition, after film formation using an aqueous solution, the film is preferably transferred to the pretreatment chamber 103 where heat treatment is performed in vacuum to vaporize moisture.
[0168]
Next, the film is transferred to the film formation chamber 110 by a transfer mechanism installed in the transfer chamber 108, and the cathode 402 made of a metal layer is formed on the EL layer 401. Here, the film formation chamber 110 is a vapor deposition apparatus provided with AlLi as a vapor deposition source.
[0169]
Next, the protective film 403 is formed over the cathode 402 by being transferred from the transfer chamber 108 to the film formation chamber 113 without being exposed to the atmosphere. Here, a sputtering apparatus provided with a target made of silicon or a target made of silicon nitride in the film formation chamber 113 is used. The silicon nitride film can be formed by setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[0170]
Through the above process, the stacked structure illustrated in FIG. 7B, that is, a light-emitting element covered with a protective film is formed over the substrate.
[0171]
The subsequent steps are the same as the manufacturing procedure of the light-emitting device having the stacked structure shown in FIG.
[0172]
Thus, if the manufacturing apparatus shown in FIG. 8 is used, the stacked structure shown in FIGS. 7A and 7B can be made separately.
[0173]
Further, this embodiment can be freely combined with Embodiment Modes 1 to 5, Embodiment 1, and Embodiment 2.
[0174]
[Example 4]
In this embodiment, the form of a container to be conveyed will be specifically described with reference to FIG. The second container divided into an upper part (721a) and a lower part (721b) used for conveyance is for fixing the first container provided on the upper part of the second container, and pressurizing the fixing means. A spring 705, a handle 710, a gas inlet 708 serving as a gas path for holding the second container provided under the second container under reduced pressure, and an O for fixing the upper container 721a and the lower container 721b. It has a ring and a fastener 702. In the second container, a first container 701 in which a purified vapor deposition material is enclosed is installed. Note that the second container is preferably formed using a material containing stainless steel, and the first container 701 is preferably formed using a material containing titanium.
[0175]
In the material manufacturer, the purified deposition material is sealed in the first container 701. Then, the second upper portion 721a and the lower portion 721b are combined through an O-ring, and the upper container 721a and the lower container 721b are fixed by a fastener 702, and the first container 701 is sealed in the second container. Thereafter, the inside of the second container is depressurized via the gas inlet 708, further replaced with a nitrogen atmosphere, the spring 705 is adjusted, and the first container 701 is fixed by the fixing means 706. In addition, you may install a desiccant in a 2nd container. When the inside of the second container is maintained in a vacuum, reduced pressure, or nitrogen atmosphere in this manner, even a slight amount of oxygen or water attached to the vapor deposition material can be prevented.
[0176]
In this state, the first container 701 is transported to the light emitting device manufacturer and installed in the vapor deposition chamber. Thereafter, the vapor deposition material is sublimated by heating, and a vapor deposition film is formed.
[0177]
In addition, it is preferable that other components such as a film thickness monitor (such as a crystal resonator), a shutter, and the like are similarly transported without being exposed to the atmosphere and installed in the vapor deposition apparatus.
[0178]
Further, in this embodiment, an installation chamber for taking out a crucible (filled with a deposition material) vacuum-sealed in the container without touching the atmosphere from the container and setting the crucible in the deposition holder is a film formation chamber. The crucible is transferred from the installation room by the transfer robot without being exposed to the atmosphere. It is preferable to provide a vacuum evacuation unit in the installation chamber and also provide a unit for heating the crucible.
[0179]
With reference to FIGS. 9A and 9B, a mechanism for installing the first container 701 sealed in the second containers 721a and 721b in the film formation chamber will be described.
[0180]
FIG. 9A shows an installation having a rotary installation base 713 on which the second containers 721a and 721b in which the first containers are stored, a transport mechanism for transporting the first container, and a lifting mechanism 711. A cross section of chamber 705 is described. The installation chamber is disposed adjacent to the film formation chamber, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet. In addition, the conveyance mechanism of a present Example is limited to the structure which pinches | interposes (pinch) and conveys the 1st container from the upper direction of the 1st container 701 as described in FIG.9 (B). Instead, it may be configured to convey the side surface of the first container.
[0181]
In such an installation room, the second container is placed on the rotary installation base 713 with the fastener 702 removed. Since the inside is in a vacuum state, it cannot be removed even if the fastener 702 is removed. Next, the inside of the installation chamber is depressurized by means for controlling the atmosphere. When the pressure in the installation chamber is equal to the pressure in the second container, the second container can be easily opened. Then, the upper portion 721a of the second container is removed by the lifting mechanism 711, and the rotary installation base 713 rotates around the rotation shaft 712 to move the lower portion of the second container and the first container. Then, the first container 701 is transported to the vapor deposition chamber by the transport mechanism, and the first container 701 is installed in a vapor deposition source holder (not shown). In addition, the first container 701 may be preheated by a heater built in the rotary mounting table 713 before being transferred to the deposition chamber.
[0182]
Thereafter, the vapor deposition material is sublimated by the heating means provided in the vapor deposition source holder, and film formation is started. When a shutter (not shown) provided on the evaporation source holder is opened during the film formation, the sublimated evaporation material is scattered in the direction of the substrate and is evaporated onto the substrate, and the light emitting layer (hole transport layer, hole injection layer) , Including an electron transport layer and an electron injection layer).
[0183]
After the vapor deposition is completed, the first container is lifted from the vapor deposition source holder, transported to the installation chamber, and placed on the lower container (not shown) of the second container installed on the rotary installation table 713, and the upper part Sealed by the container 721a. At this time, it is preferable that the first container, the upper container, and the lower container are sealed with the transported combination. In this state, the installation chamber is set to atmospheric pressure, the second container is taken out of the installation chamber, the fastener 702 is fixed, and the material is conveyed to the material manufacturer.
[0184]
FIG. 10 shows an example of an installation room in which a plurality of first containers 911 can be installed. 10A and 10B, in the installation chamber 905, a turntable 907 on which a plurality of first containers 911 or second containers 912 can be placed, and a first container for conveying the first container The film formation chamber 906 includes a vapor deposition source holder 903 and a mechanism (not shown here) for moving the vapor deposition holder. In vapor deposition, the vapor deposition holder 903 is moved in the X direction or Y direction with respect to the fixed substrate to form a uniform vapor deposition film on the substrate surface. FIG. 10A shows a top view, and FIG. 10B shows a perspective view of the installation room. The installation chamber 905 is disposed adjacent to the film formation chamber 906 via the gate valve 900, and the atmosphere of the installation chamber can be controlled by means for controlling the atmosphere via the gas inlet. Although not shown, a place where the removed upper part (second container) 912 is arranged is provided separately.
[0185]
Alternatively, a robot may be provided in a pretreatment chamber (installation chamber) connected to the film formation chamber, and the evaporation source may be moved from the film formation chamber to the pretreatment chamber, and the vapor deposition material may be set in the vapor deposition source in the pretreatment chamber. That is, it is good also as a manufacturing apparatus which a vapor deposition source moves to a pre-processing chamber. By doing so, the vapor deposition source can be set while maintaining the cleanliness of the film forming chamber.
[0186]
In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 5 and Embodiments 1 to 3.
[0187]
[Example 5]
In this embodiment, an example of a multi-chamber manufacturing apparatus in which the production from the first electrode to the sealing is fully automated is shown in FIG.
[0188]
FIG. 11 shows gates 500a to 500y, transfer chambers 502, 504a, 508, 514, 518, delivery chambers 505, 507, 511, a charging chamber 501, a first film formation chamber 506H, and a second film formation chamber. 506B, a third film formation chamber 506G, a fourth film formation chamber 506R, a fifth film formation chamber 506E, other film formation chambers 509, 510, 512, 513, 532, and an installation chamber 526R in which a vapor deposition source is installed. 526G, 526B, 526E, 526H, pretreatment chambers 503a, 503b, sealing chamber 516, mask stock chamber 524, sealing substrate stock chamber 530, cassette chambers 520a, 520b, tray mounting stage 521, , And a take-out chamber 519. Note that a transfer mechanism 504b for transferring the substrate 504c is provided in the transfer chamber 504a, and each of the other transfer chambers is also provided with a transfer mechanism.
[0189]
Hereinafter, a procedure for manufacturing a light-emitting device by carrying a substrate provided with an anode (first electrode) and an insulator (partition wall) covering an end of the anode in advance into the manufacturing apparatus shown in FIG. Note that in the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (current control TFTs) and other thin film transistors (such as switching TFTs) connected to an anode are provided in advance on a substrate, and are formed of thin film transistors. A drive circuit is also provided. In addition, when a simple matrix light-emitting device is manufactured, the manufacturing apparatus illustrated in FIG. 11 can be used.
[0190]
First, the substrate is set in the cassette chamber 520a or the cassette chamber 520b. When the substrate is a large substrate (for example, 300 mm × 360 mm), it is set in the cassette chamber 520b. When the substrate is a normal substrate (for example, 127 mm × 127 mm), it is set in the cassette chamber 520a and then transferred to the tray mounting stage 521. Then, a plurality of substrates are set on a tray (for example, 300 mm × 360 mm).
[0191]
The substrate set in the cassette chamber (a substrate provided with an anode and an insulator covering the end of the anode) is transferred to the transfer chamber 518.
[0192]
In addition, before setting in the cassette chamber, a porous sponge (typically, a surfactant (weakly alkaline) is added to the surface of the first electrode (anode) to reduce point defects. It is preferable to remove dust on the surface by washing with PVA (polyvinyl alcohol), nylon, or the like. As a cleaning mechanism, a cleaning device having a roll brush (manufactured by PVA) that rotates around an axis parallel to the surface of the substrate and contacts the surface of the substrate may be used, or may rotate around an axis perpendicular to the surface of the substrate. You may use the washing | cleaning apparatus which has a disk brush (product made from PVA) which contacts the surface of a board | substrate while moving. In order to remove moisture and other gases contained in the substrate before forming a film containing an organic compound, annealing for deaeration is preferably performed in a vacuum, and is connected to the transfer chamber 518. Then, it may be transferred to the baking chamber 523 and annealed there.
[0193]
Next, the substrate is transferred from the transfer chamber 518 provided with the substrate transfer mechanism to the preparation chamber 501. In the manufacturing apparatus of this embodiment, the robot provided in the transfer chamber 518 can reverse the front and back of the substrate, and can carry it over into the preparation chamber 501. In this embodiment, the atmospheric pressure is always maintained in the transfer chamber 518. The charging chamber 501 is connected to an evacuation treatment chamber, and after evacuation, it is preferable to introduce an inert gas and set it to atmospheric pressure.
[0194]
Next, the material is transferred to a transfer chamber 502 connected to the preparation chamber 501. It is preferable to evacuate and maintain the vacuum in advance so that moisture and oxygen do not exist in the transfer chamber 502 as much as possible.
[0195]
The vacuum evacuation chamber is provided with a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. As a result, the ultimate vacuum of the transfer chamber connected to the preparation chamber is reduced to 10 ^-Five -10 ^-6 Pa can be set, and the back diffusion of impurities from the pump side and the exhaust system can be controlled. In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.
[0196]
In addition, when it is desired to remove a film containing an organic compound formed in an unnecessary place, the film may be transferred to the pretreatment chamber 503a and the organic compound film stack may be selectively removed. The pretreatment chamber 503a has plasma generating means, and Ar, H ₂ , F, NF _Three Or O ₂ Dry etching is performed by exciting one or more gases selected from the above to generate plasma. By using the mask, only unnecessary portions can be selectively removed. Further, a UV irradiation mechanism may be provided in the pretreatment chamber 503a so that ultraviolet irradiation can be performed as the anode surface treatment.
[0197]
In order to eliminate shrinkage, it is preferable to perform vacuum heating immediately before deposition of a film containing an organic compound. The film is transferred to the pretreatment chamber 503b to thoroughly remove moisture and other gases contained in the substrate. In order to perform the deaeration annealing, vacuum (5 × 10 ^-3 Torr (0.665 Pa) or less, preferably 10 ^-Four -10 ^-6 Pa). In the pretreatment chamber 503b, a plurality of substrates are uniformly heated using a flat plate heater (typically a sheath heater). A plurality of the flat plate heaters are installed, and can be heated from both sides so that the substrate is sandwiched by the flat plate heaters. Of course, the flat plate heaters can also be heated from one side. In particular, when an organic resin film is used as a material for an interlayer insulating film or a partition, depending on the organic resin material, moisture may be easily adsorbed and degassing may occur. Therefore, before forming a layer containing an organic compound, It is effective to perform vacuum heating for removing adsorbed moisture by performing natural cooling for 30 minutes after heating for 100 minutes to 100 ° C., preferably 150 ° C. to 200 ° C., for example, for 30 minutes or more.
[0198]
Next, after performing the vacuum heating, the substrate is transferred from the transfer chamber 502 to the delivery chamber 505, and further, the substrate is transferred from the transfer chamber 505 to the transfer chamber 504a without being exposed to the atmosphere.
[0199]
Thereafter, the substrate is appropriately transferred to the film formation chambers 506R, 506G, 506B, and 506E connected to the transfer chamber 504a, and a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, or an electron injection layer An organic compound layer made of a low molecule is appropriately formed. Alternatively, the substrate can be transferred from the transfer chamber 102 to the film formation chamber 506H to perform evaporation.
[0200]
In the deposition chamber 512, a hole injection layer made of a polymer material may be formed by an inkjet method, a spin coating method, or the like under atmospheric pressure or reduced pressure. Alternatively, the film may be formed by an inkjet method in a vacuum with the substrate placed vertically. A poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS), polyaniline / camphorsulfonic acid aqueous solution (PEDOT / PSS) acting as a hole injection layer (anode buffer layer) on the first electrode (anode) PANI / CSA), PTPDES, Et-PTPDK, PPBA, or the like may be applied to the entire surface and fired. When firing, it is preferably performed in the baking chamber 523. When a hole injection layer made of a polymer material is formed by a coating method using spin coating or the like, flatness is improved, and coverage and film thickness uniformity of a film formed thereon are improved. be able to. In particular, since the thickness of the light emitting layer becomes uniform, uniform light emission can be obtained. In this case, it is preferable to perform vacuum heating (100 to 200 ° C.) immediately after forming the hole injection layer by a coating method and immediately before film formation by the vapor deposition method. What is necessary is just to perform in the pre-processing chamber 503b when heating in a vacuum. For example, after the surface of the first electrode (anode) is cleaned with a sponge, it is carried into a cassette chamber, conveyed to a film formation chamber 512, and poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) by spin coating. An aqueous solution (PEDOT / PSS) is applied to the entire surface with a film thickness of 60 nm, then transferred to the baking chamber 523, pre-baked at 80 ° C. for 10 minutes, main-baked at 200 ° C. for 1 hour, and further transferred to the pretreatment chamber 503b. Then, after vacuum heating (170 ° C., heating for 30 minutes, cooling for 30 minutes) immediately before vapor deposition, the light emitting layer may be formed by vapor deposition without being exposed to the atmosphere by being transported to the film formation chambers 506R, 506G, and 506B. . In particular, when an ITO film is used as an anode material and there are irregularities and fine particles on the surface, these effects can be reduced by setting the PEDOT / PSS film thickness to 30 nm or more.
[0201]
Also, PEDOT / PSS has poor wettability when applied on an ITO film, so the wettability is improved by first applying the PEDOT / PSS solution by spin coating and then washing with pure water. Then, it is preferable to apply the PEDOT / PSS solution again by a spin coating method and perform baking to form a film with good uniformity. In addition, after performing the 1st application | coating, while washing | cleaning with a pure water once, while modifying the surface, the effect which can remove a microparticle etc. is acquired.
[0202]
In addition, when PEDOT / PSS is formed by spin coating, the film is formed over the entire surface, so that the end face, peripheral edge, terminal part, connection area between the cathode and lower wiring, etc. can be selectively removed. Preferably, using a mask in the pretreatment chamber 503a, O ₂ It is preferable to remove selectively by ashing or the like.
[0203]
Here, the film formation chambers 506R, 506G, 506B, 506E, and 506H will be described.
[0204]
In each of the film forming chambers 506R, 506G, 506B, 506E, and 506H, a movable vapor deposition source holder is installed. A plurality of vapor deposition source holders are prepared, and a plurality of containers (crucibles) filled with EL materials are appropriately provided, and are installed in the film forming chamber in this state. A film can be selectively formed by setting the substrate by a face-down method, aligning the position of a vapor deposition mask with a CCD or the like, and performing vapor deposition by a resistance heating method. Note that the vapor deposition mask is stocked in the mask stock chamber 524 and is appropriately transported to the film formation chamber when vapor deposition is performed. Further, since the mask stock chamber is vacant at the time of vapor deposition, it is possible to stock the substrate after film formation or processing. The film formation chamber 532 is a preliminary vapor deposition chamber for forming a layer containing an organic compound or a metal material layer.
[0205]
The EL material is preferably installed in these film formation chambers by using the following manufacturing system. That is, it is preferable to form a film using a container (typically a crucible) in which an EL material is stored in advance by a material manufacturer. Further, it is preferable that the installation is performed without touching the atmosphere. When the material is transferred from the material manufacturer, the crucible is preferably introduced into the film formation chamber while being sealed in the second container. Desirably, the installation chambers 526R, 526G, 526B, 526H, and 526E having vacuum exhaust means connected to the respective film formation chambers 506R, 506G, 506B, 506H, and 506E are set to a vacuum or an inert gas atmosphere. Remove the crucible from the container and place the crucible in the film formation chamber. FIG. 9 or FIG. 10 shows an example of the installation room. By doing so, the crucible and the EL material accommodated in the crucible can be prevented from being contaminated. Note that a metal mask can be stocked in the installation chambers 526R, 526G, 526B, 526H, and 526E.
[0206]
By appropriately selecting an EL material to be installed in the film formation chambers 506R, 506G, 506B, 506H, and 506E, the entire light emitting element can be a single color (specifically, white) or full color (specifically, red, green, and blue). ) Can be formed. For example, in the case of forming a green light emitting element, a hole transport layer or a hole injection layer is formed in the film formation chamber 506H, a light emitting layer (G) is formed in the film formation chamber 506G, and an electron transport layer or electron injection layer is formed in the film formation chamber 506E. A green light emitting element can be obtained by forming a cathode after sequentially laminating. For example, in the case of forming a full-color light-emitting element, a vapor deposition mask for R is used in the deposition chamber 506R, and a hole transport layer or a hole injection layer, a light-emitting layer (R), an electron transport layer or an electron injection layer are sequentially stacked. Then, using a deposition mask for G in the film formation chamber 506G, a hole transport layer or a hole injection layer, a light emitting layer (G), an electron transport layer or an electron injection layer are sequentially stacked, and the film for the B is formed in the film formation chamber 506B. A full color light emitting device can be obtained by forming a cathode after sequentially stacking a hole transport layer or hole injection layer, a light emitting layer (B), an electron transport layer or an electron injection layer using the above evaporation mask.
[0207]
The organic compound layer that emits white light is a three-wavelength type containing three primary colors of red, green, and blue, and blue / yellow or blue-green / orange in the case of stacking light-emitting layers having different emission colors. Broadly divided into two-wavelength types using complementary color relationships. It is also possible to form a white light emitting element in one film formation chamber. For example, in the case of obtaining a white light emitting element using a three-wavelength type, a film formation chamber having a plurality of vapor deposition source holders equipped with a plurality of crucibles is prepared, and an aromatic diamine (TPD) is provided in the first vapor deposition source holder. P-EtTAZ for the second deposition source holder and Alq for the third deposition source holder _Three In the fourth evaporation source holder, Alq _Three EL material added with NileRed, a red luminescent dye, and Alq for the fifth evaporation source holder _Three Is placed in each film forming chamber in this state. Then, the first to fifth vapor deposition source holders start moving in order to perform vapor deposition on the substrate and stack them. Specifically, TPD is sublimated from the first vapor deposition source holder by heating and vapor deposited on the entire surface of the substrate. Thereafter, p-EtTAZ is sublimated from the second vapor deposition source holder, and Alq from the third vapor deposition source holder. _Three Is sublimated and Alq is removed from the fourth evaporation source holder. _Three : NileRed is sublimated, Alq from the fifth evaporation source holder _Three Is sublimated and deposited on the entire surface of the substrate. Thereafter, a white light emitting element can be obtained by forming a cathode.
[0208]
After a layer containing an organic compound is appropriately stacked by the above steps, the substrate is transferred from the transfer chamber 504a to the delivery chamber 507, and further transferred from the delivery chamber 507 to the transfer chamber 508 without being exposed to the atmosphere.
[0209]
Next, the substrate is transferred to the film formation chamber 510 by a transfer mechanism installed in the transfer chamber 508 to form a cathode. This cathode is an inorganic film (MgAg, MgIn, CaF) formed by a vapor deposition method using resistance heating. ₂ , LiF, CaN, etc., or a film formed by co-evaporation of an element belonging to Group 1 or 2 of the periodic table and aluminum, or a laminated film thereof. Moreover, you may form a cathode using a sputtering method.
[0210]
In the case of manufacturing a top emission type light emitting device, the cathode is preferably transparent or translucent, and the metal film thin film (1 nm to 10 nm) or the metal film thin film (1 nm to 10 nm) A laminate with a transparent conductive film is preferably used as the cathode. In this case, a transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O _Three (ZnO), zinc oxide (ZnO), or the like) may be formed.
[0211]
Through the above process, a light-emitting element having a stacked structure is formed.
[0212]
Alternatively, the protective film may be sealed by forming a protective film made of a silicon nitride film or a silicon nitride oxide film by being transferred to the deposition chamber 513 connected to the transfer chamber 508. Here, a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride is provided in the film formation chamber 513. For example, the silicon nitride film can be formed over the cathode by using a target made of silicon and setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon. Further, a thin film containing carbon as a main component (DLC film, CN film, amorphous carbon film) may be formed as a protective film, or a film formation chamber using a CVD method may be provided separately. Diamond-like carbon film (also called DLC film) is formed by plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron cyclotron resonance (ECR) CVD method, hot filament CVD method, etc.), combustion flame method It can be formed by sputtering, ion beam vapor deposition, laser vapor deposition or the like. The reaction gas used for film formation includes hydrogen gas and hydrocarbon-based gas (for example, CH _Four , C ₂ H ₂ , C ₆ H ₆ And the like, and ionized by glow discharge, and the ions are accelerated and collided with a negative self-biased cathode to form a film. Also, the CN film is C as a reactive gas. ₂ H _Four Gas and N ₂ What is necessary is just to form using gas. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.
[0213]
In this embodiment, a protective layer made of a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film is formed on the cathode. For example, after forming the cathode, the film is conveyed to the film formation chamber 513 to form a first inorganic insulating film, and the film is conveyed to the film formation chamber 532 to be hygroscopic and transparent by an evaporation method (organic compound). And a second inorganic insulating film may be formed again by being transported to the deposition chamber 513 again.
[0214]
Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 508 to the delivery chamber 511 without being exposed to the air, and further transferred from the delivery chamber 511 to the transfer chamber 514. Next, the substrate over which the light-emitting element is formed is transferred from the transfer chamber 514 to the sealing chamber 516.
[0215]
The sealing substrate is prepared by being set in the load chamber 517 from the outside. Note that it is preferable to perform annealing in advance in advance in order to remove impurities such as moisture. In the case where a sealing material for bonding to a substrate provided with a light emitting element is formed on the sealing substrate, the sealing material is drawn using a dispenser device in the sealing chamber 555, and the sealing substrate is formed. Is transferred to the sealing substrate stock chamber 530. Note that a desiccant may be provided on the sealing substrate in the sealing chamber 555. Note that here, an example in which the sealing material is formed over the sealing substrate is described; however, there is no particular limitation, and the sealing material may be formed over the substrate over which the light-emitting element is formed.
[0216]
Next, the sealing chamber 516, the substrate and the sealing substrate are bonded together, and the pair of bonded substrates is irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 516 to cure the sealing material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.
[0217]
Next, the pair of bonded substrates is transferred from the sealing chamber 516 to the transfer chamber 514 and then transferred from the transfer chamber 514 to the take-out chamber 519 and taken out.
[0218]
As described above, by using the manufacturing apparatus illustrated in FIG. 11, it is not necessary to expose the light emitting element to the atmosphere until the light emitting element is completely enclosed in the sealed space. Therefore, a highly reliable light emitting apparatus can be manufactured. In the transfer chamber 514, the substrate is transferred at atmospheric pressure. In order to remove moisture, the vacuum and the nitrogen atmosphere at atmospheric pressure can be repeated, but the transfer chambers 502 and 504a can be repeated. , 508, it is desirable that the vacuum is always maintained. Further, the transfer chamber 518 is always at atmospheric pressure.
[0219]
Although not shown here, a control device for controlling work in each processing chamber, a control device for transferring between the processing chambers, and a path for moving the substrate to each processing chamber are controlled. A control device that realizes automation is provided.
[0220]
Moreover, in the manufacturing apparatus shown in FIG. 11, after carrying in the board | substrate with which the transparent conductive film (or metal film (TiN) was provided as an anode, and forming the layer containing an organic compound, a transparent or translucent cathode (for example, A top emission (or double emission) light emitting element can be formed by forming a thin metal film (a laminate of Al, Ag) and a transparent conductive film). Indicates an element that transmits light emitted from the organic compound layer through the cathode.
[0221]
Moreover, in the manufacturing apparatus shown in FIG. 11, after carrying in the board | substrate with which the transparent conductive film was provided as an anode and forming the layer containing an organic compound, by forming the cathode which consists of a metal film (Al, Ag), It is also possible to form a bottom emission type light emitting element. Note that a bottom emission light-emitting element refers to an element that extracts light generated in an organic compound layer from an anode, which is a transparent electrode, toward a TFT and further passes through a substrate.
[0222]
In addition, this embodiment can be freely combined with Embodiment Modes 1 to 5, Embodiment 1, Embodiment 2, and Embodiment 4.
[0223]
【The invention's effect】
According to the present invention, it is possible to eliminate a used glass bottle which becomes a waste and to make an environmentally friendly process. Further, by refining or storing the EL material directly in the container at the material manufacturer, only a necessary amount can be sold, and the relatively expensive EL material can be used efficiently.
[0224]
Further, according to the present invention, the work of transferring from the glass bottle to the container can be eliminated. By eliminating the task of transferring the EL material to the container by the light emitting device manufacturer, the throughput is improved by simply installing the container in which the EL material has been purified or stored in advance in the vapor deposition device by the light emitting device manufacturer. Can be made.
[0225]
Further, according to the present invention, it is possible to realize a manufacturing system that is fully automated to improve throughput, and to realize a consistent closed system that can avoid contamination with impurities.
[0226]
Conventionally, no matter how much high-purity EL material is provided by the material manufacturer, there is a risk of impurity contamination as long as there is a conventional transfer work at the light emitting device manufacturer, and the purity of the EL material cannot be maintained, Although there was a limit in purity, it is possible to maintain the extremely high purity EL material obtained by the material manufacturer according to the present invention, and to perform vapor deposition in the light emitting device manufacturer without reducing the purity as it is. That is, according to the present invention, it is possible to cope with future ultra-high purity of EL materials.
[Brief description of the drawings]
FIG. 1 is a diagram showing a first embodiment.
FIG. 2 is a diagram showing a second embodiment.
FIG. 3 is a diagram showing a third embodiment.
4 is a diagram showing a fourth embodiment. FIG.
5 is a diagram illustrating a fifth embodiment. FIG.
6 is a diagram showing Example 1. FIG.
FIG. 7 is a view showing a laminated structure. (Example 2)
FIG. 8 shows a multi-chamber manufacturing apparatus.
FIG. 9 is a diagram showing crucible conveyance in an installation room.
FIG. 10 is a view showing crucible conveyance to a vapor deposition source holder in an installation chamber.
FIG. 11 shows a multi-chamber manufacturing apparatus. (Example 5)
FIG. 12 is a view showing an external view of a crucible and a simplified view of a vapor deposition apparatus.
FIG. 13 is a diagram showing a case where replenishment is performed and vapor deposition is performed.

Claims (1)

Purify the EL material in the first container,
Sealing the first container with a second container;
The second container is introduced into a manufacturing apparatus having a vacuum evacuation means, the first container is taken out from the second container and arranged, and then the first container is heated to produce the EL material. Vapor deposition of
The first container is sealed with the second container in an inert gas atmosphere or vacuum,
The method of manufacturing an EL element, wherein the first container is disposed in the manufacturing apparatus without being exposed to the air after the EL material is purified.

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