TWI427802B - 可印刷半導體結構及製造和組合之相關方法 - Google Patents

可印刷半導體結構及製造和組合之相關方法 Download PDF

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Publication number
TWI427802B
TWI427802B TW095119520A TW95119520A TWI427802B TW I427802 B TWI427802 B TW I427802B TW 095119520 A TW095119520 A TW 095119520A TW 95119520 A TW95119520 A TW 95119520A TW I427802 B TWI427802 B TW I427802B
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TW
Taiwan
Prior art keywords
printable semiconductor
wafer
semiconductor component
component
printable
Prior art date
Application number
TW095119520A
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English (en)
Chinese (zh)
Other versions
TW200721517A (en
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Heung Cho Ko
Shawn Mack
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2005/019354 external-priority patent/WO2005122285A2/en
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of TW200721517A publication Critical patent/TW200721517A/zh
Application granted granted Critical
Publication of TWI427802B publication Critical patent/TWI427802B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095119520A 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法 TWI427802B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US79010406P 2006-04-07 2006-04-07

Publications (2)

Publication Number Publication Date
TW200721517A TW200721517A (en) 2007-06-01
TWI427802B true TWI427802B (zh) 2014-02-21

Family

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Family Applications (7)

Application Number Title Priority Date Filing Date
TW095119520A TWI427802B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW102142517A TWI533459B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW104103340A TWI570776B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW105135576A TW201717261A (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW099127004A TWI489523B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽

Family Applications After (6)

Application Number Title Priority Date Filing Date
TW102142517A TWI533459B (zh) 2005-06-02 2006-06-01 可印刷半導體結構及製造和組合之相關方法
TW104103340A TWI570776B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW105135576A TW201717261A (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW095121212A TWI336491B (en) 2006-04-07 2006-06-14 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
TW100139527A TWI466488B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽
TW099127004A TWI489523B (zh) 2006-04-07 2006-06-14 用在橡膠基板上高效能電子組件之可延伸形式之單晶矽

Country Status (4)

Country Link
JP (6) JP2007281406A (ko)
KR (5) KR20070100617A (ko)
MY (4) MY151572A (ko)
TW (7) TWI427802B (ko)

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