TWI424531B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI424531B
TWI424531B TW097102207A TW97102207A TWI424531B TW I424531 B TWI424531 B TW I424531B TW 097102207 A TW097102207 A TW 097102207A TW 97102207 A TW97102207 A TW 97102207A TW I424531 B TWI424531 B TW I424531B
Authority
TW
Taiwan
Prior art keywords
film
gate insulating
insulating film
semiconductor layer
gate electrode
Prior art date
Application number
TW097102207A
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English (en)
Chinese (zh)
Other versions
TW200849475A (en
Inventor
細谷邦雄
藤川最史
Original Assignee
半導體能源研究所股份有限公司
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Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200849475A publication Critical patent/TW200849475A/zh
Application granted granted Critical
Publication of TWI424531B publication Critical patent/TWI424531B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW097102207A 2007-01-30 2008-01-21 半導體裝置及其製造方法 TWI424531B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007019662 2007-01-30

Publications (2)

Publication Number Publication Date
TW200849475A TW200849475A (en) 2008-12-16
TWI424531B true TWI424531B (zh) 2014-01-21

Family

ID=39402813

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097102207A TWI424531B (zh) 2007-01-30 2008-01-21 半導體裝置及其製造方法

Country Status (6)

Country Link
US (2) US7777224B2 (https=)
EP (1) EP1953813A3 (https=)
JP (1) JP5216339B2 (https=)
KR (1) KR101425845B1 (https=)
CN (1) CN101236973B (https=)
TW (1) TWI424531B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI474408B (zh) 2008-12-26 2015-02-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
CN101789398B (zh) * 2010-03-09 2012-08-22 友达光电股份有限公司 半导体元件的制造方法
JP6072858B2 (ja) * 2015-06-22 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20220079442A (ko) * 2020-12-04 2022-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 제작 방법
CN117976675A (zh) * 2022-10-26 2024-05-03 瀚宇彩晶股份有限公司 反射式显示装置以及其制造方法

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US5652453A (en) * 1995-06-06 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US6228721B1 (en) * 2000-06-26 2001-05-08 Advanced Micro Devices, Inc. Fabrication of metal oxide structures with different thicknesses on a semiconductor substrate
US6261881B1 (en) * 1998-08-21 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
US6278131B1 (en) * 1999-01-11 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Pixel TFT and driver TFT having different gate insulation width
US20060051914A1 (en) * 2004-09-08 2006-03-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

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JPS6037313A (ja) * 1983-08-10 1985-02-26 Kenji Ishikura コンクリ−トブロツク
JPH0637313A (ja) 1992-07-16 1994-02-10 Hitachi Ltd 薄膜半導体装置とその製造方法
JP3025385B2 (ja) * 1993-01-21 2000-03-27 シャープ株式会社 半導体装置
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
EP0797016B1 (en) * 1996-03-19 2002-06-05 Exedy Corporation Multi-plate clutch mechanism
JP3593212B2 (ja) * 1996-04-27 2004-11-24 株式会社半導体エネルギー研究所 表示装置
TW334581B (en) * 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
JP3607016B2 (ja) * 1996-10-02 2005-01-05 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、並びに携帯型の情報処理端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、カメラおよびプロジェクター
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493741B2 (ja) * 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7022556B1 (en) * 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
US20020113268A1 (en) * 2000-02-01 2002-08-22 Jun Koyama Nonvolatile memory, semiconductor device and method of manufacturing the same
JP4118484B2 (ja) * 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) * 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) * 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6900084B1 (en) * 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP4737971B2 (ja) * 2003-11-14 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法
JP4889968B2 (ja) 2005-07-05 2012-03-07 ソニー株式会社 電力線搬送通信システム、電力線搬送通信方法、通信装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US5652453A (en) * 1995-06-06 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof
US6261881B1 (en) * 1998-08-21 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
US6278131B1 (en) * 1999-01-11 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Pixel TFT and driver TFT having different gate insulation width
US6228721B1 (en) * 2000-06-26 2001-05-08 Advanced Micro Devices, Inc. Fabrication of metal oxide structures with different thicknesses on a semiconductor substrate
US20060051914A1 (en) * 2004-09-08 2006-03-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JP5216339B2 (ja) 2013-06-19
US8273614B2 (en) 2012-09-25
TW200849475A (en) 2008-12-16
CN101236973A (zh) 2008-08-06
CN101236973B (zh) 2012-12-12
EP1953813A3 (en) 2017-09-06
US20100304538A1 (en) 2010-12-02
JP2008211195A (ja) 2008-09-11
US20080283835A1 (en) 2008-11-20
US7777224B2 (en) 2010-08-17
KR20080071521A (ko) 2008-08-04
KR101425845B1 (ko) 2014-08-05
EP1953813A2 (en) 2008-08-06

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