TWI417245B - 氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物 - Google Patents
氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物 Download PDFInfo
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- TWI417245B TWI417245B TW098119707A TW98119707A TWI417245B TW I417245 B TWI417245 B TW I417245B TW 098119707 A TW098119707 A TW 098119707A TW 98119707 A TW98119707 A TW 98119707A TW I417245 B TWI417245 B TW I417245B
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- Prior art keywords
- alumina particles
- polishing
- particles
- alumina
- polishing composition
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Description
本發明係關於由氧化鋁所構成之氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物,其中氧化鋁包含如α-礬土(alumina)或過渡礬土之礬土及如勃姆石(boehmite)之礬土水合物。
氧化鋁粒子可於研磨例如半導體裝置基板或顯示器用基板、硬碟基板、LED用藍寶石基板等電子零件用基板之用途中,做為磨粒使用。此等基板由於有高平滑且低缺陷之要求,所使用之氧化鋁粒子之粒子尺寸比較小(例如專利文獻1、2)。含有氧化鋁粒子做為游離磨粒之研磨用組成物一般與含有膠體矽石做為游離磨粒之研磨用組成物相比,基板之研磨速度(除去速度)高。然而,即使在含有氧化鋁粒子之情況,隨著氧化鋁粒子之粒子尺寸變小,研磨用組成物所達成之基板研磨速度通常會降低。又,隨著氧化鋁粒子之粒子尺寸變小,研磨後藉由洗淨除去附著於基板表面之氧化鋁粒子變得困難(亦即,氧化鋁粒子之洗淨性降低)。
專利文獻1:日本特開平3-277683號公報
專利文獻2:日本特開平3-271647號公報
因此,本發明之目的為提供即使粒子尺寸小,也不會導致研磨速度降低或洗淨性降低等弊害,而適合做為磨粒使用之氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物。
為達成前述目的,本發明之一態樣為提供一次粒子之形狀為六面體,一次粒子之長寬比為1~5之氧化鋁粒子。氧化鋁粒子之平均一次粒徑以0.01~0.6μm為較佳。氧化鋁粒子之α化率以5~70%為較佳。又,氧化鋁粒子之平均二次粒徑以0.01~2μm為較佳;將氧化鋁粒子之90%粒徑除以10%粒徑得到之值以3以下為較佳。
本發明之另一態樣為提供含有前述氧化鋁粒子及水之研磨用組成物。
若依照本發明,可提供即使粒子尺寸小,也不會導致研磨速度降低或洗淨性降低等弊害,而適合做為磨粒使用之氧化鋁粒子及含有該氧化鋁粒子之研磨用組成物。
以下,說明本發明之一實施態樣。
本實施態樣之氧化鋁粒子,一次粒子之形狀為六面體。氧化鋁粒子之一次粒子,以具有近似於由相向之二個正方形及四個長方形或正方形所圍成之平行六面體,或相向之二個菱形及四個長方形或正方形所圍成之平行六面體的外形形狀為較佳。前者之例子如第一圖所示,後者之例子如第二圖所示。
氧化鋁粒子之一次粒子之長寬比在1~5之範圍。其中,長寬比被定義為從具有六面體形狀之氧化鋁粒子之一次粒子之一個頂點開始,將延伸之三邊中最長邊之長度當做a,最短邊之長度當做c時,a除以c之值。剩餘一邊之長度為b,其以與最長邊之長度a約略相等為較佳。氧化鋁粒子藉由一次粒子之長寬比在前述範圍,具有「即使粒子尺寸小,亦不會導致研磨速度降低或洗淨性降低之弊害,可適合做為磨粒使用」之優點。為了將此種氧化鋁粒子之優點更為提高,一次粒子之長寬比以儘可能小為較佳。具體而言,氧化鋁粒子的一次粒子之長寬比以3以下為佳,以2以下為較佳,以1.5以下為更佳。
本實施態樣之氧化鋁粒子,於研磨例如金屬(包含銅、鋁、鎢、鉑、鈀、銣等金屬單體,及鎳-磷等金屬合金)、半導體(包含鍺、矽等單體半導體,鍺矽、鎵砷、銦磷、氮化鎵等化合物半導體,及藍寶石等氧化物半導體)、或絕緣體(包含矽酸鋁玻璃等玻璃、及胺基甲酸酯樹脂、丙烯酸系樹脂、聚碳酸酯樹脂等塑膠)所構成之研磨對象物之用途中,可做為磨粒使用。更具體而言,氧化鋁粒子可使用於例如鋁、銅等卑金屬或鉑、鈀、釕等貴金屬所構成之半導體裝置基板之配線之研磨,經鎳-磷鍍覆之硬碟基板表面之研磨,玻璃圓盤(glass disc)基板之研磨,眼鏡用塑膠鏡片之研磨,液晶顯示器用彩色濾光片基板之研磨,LED用藍寶石基板之研磨。氧化鋁粒子可使用做為游離磨粒,亦可使用做為固定磨粒。
本實施態樣之氧化鋁粒子,在做為磨粒使用之情況,關於平均一次粒徑、平均二次粒徑、粒度分布及α化率,具有如以下說明之較佳範圍。
氧化鋁粒子之平均一次粒徑以0.01μm以上為佳,而以0.03μm以上為較佳,以0.05μm以上為更佳。其中,平均一次粒徑被定義為從具有六面體形狀之氧化鋁粒子之一次粒子之一個頂點延伸之三邊中最長邊之長度之平均值。隨著氧化鋁粒子之平均一次粒徑變大,氧化鋁粒子對於研磨對象物之研磨速度(除去速度)提高。關於此,若氧化鋁粒子之平均一次粒徑為0.01μm以上,更進一步而言0.03μm以上或0.05μm以上,則將研磨速度提高至實用上特別適合的程度將變得容易。
又,氧化鋁粒子之平均一次粒徑以0.6μm以下為佳,而以0.35μm以下為較佳,以0.25μm以下為更佳。隨著氧化鋁粒子之平均一次粒徑變小,以氧化鋁粒子研磨後對於研磨對象物之刮痕數及表面粗糙度減低。關於此,若氧化鋁粒子之平均一次粒徑為0.6μm以下,更進一步而言為0.35μm以下或0.25μm以下,則使刮痕數及表面粗糙度減低至實用上特別適合的程度將變得容易。
氧化鋁粒子之平均二次粒徑以0.01μm以上為佳,而以0.03μm以上為較佳,以0.05μm以上為更佳。其中,平均二次粒徑等於:當將藉由雷射散射法得到之粒徑從小至大排序並累積計算氧化鋁粒子之體積至為氧化鋁粒子之所有粒子之累積體積之50%以上時,最後所累積計算到之氧化鋁粒子之粒徑。隨著氧化鋁粒子之平均二次粒徑變大,氧化鋁粒子對於研磨對象物之研磨速度提高。又,用氧化鋁粒子研磨後,將附著於研磨物對象物表面之氧化鋁粒子藉由洗淨除去變得容易(亦即,氧化鋁粒子之洗淨性提高)。關於此,若氧化鋁粒子之平均二次粒徑為0.01μm以上,更進一步而言0.03μm以上或0.05μm以上,則使研磨速度及洗淨性提高至實用上特別適合的程度將變得容易。
又,氧化鋁粒子之平均二次粒徑以2μm以下為佳,而以1μm以下為較佳,以0.5μm以下為更佳。隨著氧化鋁粒子之平均二次粒徑變小,用氧化鋁粒子研磨後研磨對象物之刮痕數及表面粗糙度減低。關於此,若氧化鋁粒子之平均二次粒徑為2μm以下,更進一步而言1μm以下或0.5μm以下,則使刮痕數及表面粗糙度減低至實用上特別適合的程度將變得容易。
將氧化鋁粒子之90%粒徑(D90)除以10%粒徑(D10)所得到之D90/D10值以在3以下為佳,在2.5以下為較佳,在2.2以下為更佳,以2.0以下為特佳。其中,90%粒徑等於:當將藉由雷射散射法得到之粒徑從小至大排序並累積計算氧化鋁粒子之體積至為氧化鋁粒子之所有粒子之累積體積之90%以上時,最後所累積計算到之氧化鋁粒子之粒徑;10%粒徑等於:當將藉由雷射散射法得到之粒徑從小至大排序並累積計算氧化鋁粒子之體積至為氧化鋁粒子之所有粒子之累積體積之10%以上時,最後所累積計算到之氧化鋁粒子之粒徑。隨著氧化鋁粒子之D90/D10值變小,由於氧化鋁粒子中所含之造成刮痕數及表面粗糙度增大之粗大粒子之比率變小,所以用氧化鋁粒子研磨後研磨對象物之刮痕數及表面粗糙度減低。又,由於氧化鋁粒子中所含之為洗淨性降低原因之微小粒子之比率亦變小,所以附著於研磨後研磨對象物表面之氧化鋁粒子藉由洗淨除去變得容易。關於此,若氧化鋁粒子之D90/D10值在3以下,更進一步而言在2.5以下或2.2以下或2.0以下,則使刮痕數及表面粗糙度減低至實用上特別適合的程度及使洗淨性提高至實用上特別適合的程度將變得容易。
又,對於D90/D10值之下限並無特別限定,以1.1以上為較佳,以1.2以上為更佳,以1.3以上為特佳。
氧化鋁粒子可具有任何結晶形態,例如可為任何以如勃姆石(boehmite)之礬土水合物;如γ-礬土、δ-礬土、或θ-礬土之過渡礬土;及α-礬土之任一種為主的氧化鋁粒子。然而,在要求高硬度之情況,氧化鋁粒子以至少含有一部分α-礬土為較佳。氧化鋁粒子之α-化率以5%以上為佳,以10%以上為較佳,以20%以上為更佳。其中,α-化率係藉由X繞射法,根據與金剛石(corundum)之比較所求得之值。隨著氧化鋁粒子之α-化率變高,氧化鋁粒子對於研磨對象物之研磨速度提高。關於此點,若氧化鋁粒子之α-化率為5%以上,更進一步而言10%以上或20%以上,則使研磨速度提高至實用上特別適合的程度將變得容易。
又,氧化鋁粒子之α-化率以70%以下為較佳,以50%以下為更佳,以30%以下為特佳。隨著氧化鋁粒子之α-化率變低,以氧化鋁粒子研磨後研磨對象物之刮痕數及表面粗糙度減低。關於此,若氧化鋁粒子之α-化率為70%以下,更進一步而言50%以下或30%以下,則使刮痕數及表面粗糙度減低至實用上特別適合的程度將變得容易。
本實施態樣之氧化鋁粒子,可以例如至少與水混合調製之漿液狀之研磨用組成物之態樣使用。就用於研磨經鎳-磷鍍覆之硬碟基板之表面之研磨用組成物而言,可將氧化鋁粒子,較佳連同研磨促進劑,更佳連同研磨促進劑、洗淨促進劑及氧化劑,在水中混合而調製。就用於研磨顯示器基板之研磨用組成物而言,例如可將氧化鋁粒子與水混合而調製。就用於研磨半導體裝置基板之配線之研磨用組成物而言,可將氧化鋁粒子,較佳連同研磨促進劑及氧化劑,在水中混合而調製。
研磨用組成物中氧化鋁粒子之含量以0.01質量%以上為較佳,以0.1質量%以上為更佳。隨著氧化鋁粒子之含量增多,研磨用組成物對於研磨對象物之研磨速度提高。關於此,若研磨用組成物中氧化鋁粒子之含量為0.01質量%以上,更進一步而言0.1質量%以上,則使研磨速度提高至實用上特別適合的程度將變得容易。
又,研磨用組成物中氧化鋁粒子之含量以30質量%以下為較佳,以15質量%以下為更佳。隨著氧化鋁粒子之含量減少,研磨用組成物中氧化鋁粒子之分散性提高。關於此,若研磨用組成物中氧化鋁粒子之含量為30質量%以下,更進一步而言15質量%以下,則使研磨用組成物中氧化鋁粒子之分散性提高至實用上特別適合的程度將變得容易。
研磨促進劑,係以使研磨用組成物對於研磨對象物之研磨速度提高為目的,於需要時添加於研磨用組成物。可添加於研磨用組成物之研磨促進劑,可為例如有機酸及其鹽,無機酸及其鹽,及鹼類化合物(包含鹼金屬氫氧化物、氨、胺、及四級鋘化合物)。
就有機酸之具體例而言,可列舉如檸檬酸、馬來酸、馬來酸酐、蘋果酸、甘醇酸、琥珀酸、衣康酸、丙二酸、亞胺基二醋酸、葡糖酸、乳酸、扁桃酸、酒石酸、巴豆酸、菸鹼酸、醋酸、硫代蘋果酸、甲酸、草酸、羧乙基硫代琥珀酸。此等有機酸之銨鹽、鹼金屬鹽或過渡金屬鹽(包含鐵鹽、鎳鹽、鋁鹽)亦可做為研磨促進劑使用。
就無機酸之具體例而言,可列舉如鹽酸、硫酸、硝酸、磷酸。此等無機酸之銨鹽、鹼金屬鹽或過渡金屬鹽(包含鐵鹽、鎳鹽、鋁鹽)亦可做為研磨促進劑使用。
就鹼金屬氫氧化物之具體例而言,可列舉如氫氧化鉀、氫氧化鈉、氫氧化鋰。
就胺之具體例而言,可列舉如甲胺、乙胺等單元胺,乙二胺等二元胺,單乙醇胺、三乙醇胺等烷醇胺。
就四級銨化合物之具體例而言,可列舉如四甲基銨化合物、四乙基銨化合物、四丙基銨化合物等四烷基銨化合物。
用於研磨經鎳-磷鍍覆之硬碟基板之表面之研磨用組成物所使用之研磨促進劑以無機酸鹽為較佳,尤其以如硝酸鋁、硫酸鋁、氯化鋁之無機鋁鹽為特佳。在使用無機鋁鹽之情況,用研磨用組成物研磨後不會造成基板之刮痕數及表面粗糙度增大,且研磨用組成物之研磨速度特別大幅度地提高。
用於研磨半導體裝置基板之配線之研磨用組成物所使用之研磨促進劑,以無機酸或有機酸為較佳,尤其以硝酸、硫酸、或檸檬酸為特佳。
其他研磨用組成物所使用之研磨促進劑,以無機酸之鹼金屬鹽為較佳,尤其以氯化鉀、氯化鈉、硝酸鉀、硝酸鈉、硫酸鉀、硫酸鈉為特佳。此等鹼金屬鹽促進研磨用組成物中氧化鋁粒子之凝集,結果使研磨用組成物所產生之研磨速度特別大幅度地提高。
洗淨促進劑係以提高氧化鋁粒子之洗淨性為目的,於需要時添加於研磨用組成物中。亦可使用任何螯合化合物做為洗淨促進劑。就具體之洗淨促進劑而言,可列舉二伸乙基三胺五醋酸、羥乙基伸乙基二胺三醋酸、三伸乙基四胺六醋酸、麩胺酸二醋酸,及此等酸之鹼金屬鹽及銨鹽。
氧化劑係以使研磨用組成物對於研磨對象物之研磨速度提高為目的,於需要時添加於研磨用組成物中。雖然具有氧化作用之任何物質均可使用做為氧化劑,然而較佳使用且容易操作者為過氧化氫、或過硫酸銨、過硫酸鈉、過硫酸鉀等過硫酸鹽。
繼而,對於前述氧化鋁粒子之製造方法加以說明。
以α-礬土或過渡礬土為主之氧化鋁粒子,可藉由將由一次粒子之形狀為六面體之礬土水合物所構成之原料粒子,以約略維持原料粒子之一次粒子之形狀的方式進行煅燒而製造。以α-礬土為主之氧化鋁粒子,可藉由將由一次粒子之形狀為六面體之過渡礬土之原料粒子,以約略維持原料粒子之一次粒子之形狀的方式進行煅燒而製造。原料粒子之一次粒子以具有近似於相向之二個正方形及四個長方形或正方形所圍成之平行六面體,或相向之二個菱形及四個長方形或正方形所圍成之平行六面體之外形形狀為較佳。礬土水合物可為三水鋁石(gibbsite)、鎂磷鈣鋁石(bialite)、三斜三水鋁石(nordstrandite)、勃姆石(boehmite)之任一種。煅燒溫度可為例如500~1250℃。
以勃姆石為主之氧化鋁粒子,可藉由將含有1~30質量%之平均一次粒徑為10μm以下之三水鋁石粒子或鎂磷鈣鋁石粒子之漿液,在熱壓釜內於200℃進行4小時之水熱處理而製造。
前述實施態樣亦可如下述變更。
前述實施態樣之氧化鋁粒子,除做為磨粒之用途外,亦可使用於樹脂用填充劑、顏料、塗布劑、化妝品、觸媒、陶瓷原料等之用途。
前述實施態樣之研磨用組成物,視需要亦可進一步含有界面活性劑。此時,研磨後之研磨對象物之刮痕數降低。
前述實施態樣之研磨用組成物,視需要亦可進一步含有水溶性高分子。此時,研磨後之研磨對象物之刮痕數降低。就水溶性高分子之具體例而言,可列舉羥乙基纖維素、普魯蘭糖(pullulan)、角叉菜膠(carrangeenan)等多糖類,聚乙烯醇、聚乙烯基吡咯啶酮等合成水溶性高分子。 前述實施態樣之研磨用組成物,亦可藉由將研磨用組成物之原液用水稀釋而調製。
繼而,舉出實施例及比較例,進一步具體地說明本發明。
在實施例1~17及比較例1~5中,係將表一中之「A」~「P」所示之鋁化合物粒子之任一種,與硝酸鋁九水合物或氯化鋁六水合物(研磨促進劑)、麩胺酸二醋酸四鈉鹽(洗淨促進劑)及過氧化氫(氧化劑)一起在水中混合,而調製成研磨用組成物。比較例6中係將硝酸鋁九水合物、麩胺酸二醋酸四鈉鹽及過氧化氫一起在水中混合,而調製成研磨用組成物。各例之研磨用組成物中所含之鋁化合物粒子之種類及含量以及研磨促進劑之種類及含量,分別如表二之「鋁化合物粒子之種類」欄、「鋁化合物粒子之含量」欄、「研磨促進劑之種類」欄、及「研磨促進劑之含量」欄所示。又,各例之研磨用組成物中所含之麩胺酸二醋酸之含量及過氧化氫之含量,在任一研磨用組成物之情況均分別為0.3g/L及13g/L。
表一中之「一次粒子形狀」欄所示之形狀,係依據以日立高級技術股份有限公司製之掃描電子顯微鏡「S-4700」觀察各鋁化合物粒子之一次粒子形狀的結果。表一中之「長寬比」欄所示之各數值,係依據藉由掃描電子顯微鏡「S-4700」之觀察,以200個鋁化合物粒子所計測得之長寬比之平均值。表一中之「α化率」欄所示之各數值,係使用理化股份有限公司製之X射線繞射裝置「Mini Flex II」,基於與金剛石之比較所求得之各鋁化合物粒子之α化率。表一中之「平均一次粒徑」欄所示之各數值,係依據藉由掃描電子顯微鏡「S-4700」之觀察所計測到之各鋁化合物粒子之平均一次粒徑。表一中之「平均二次粒徑」欄所示之各數值,係使用堀場製作所股份有限公司製之雷射繞射/散射式粒徑分布測定裝置「LA-950」所計測到之各鋁化合物粒子之平均二次粒徑。表一中之「D90/D10」欄所示之各數值,係從使用雷射繞射/散射式粒徑分布測定裝置「LA-950」所計測到之各鋁化合物粒子之90%粒徑及10%粒徑而計算出之D90/D10值。再者,表一中之「A」~「R」所示之鋁化合物粒子係以礬土為主之礬土粒子,「S」所示之鋁化合物粒子係以勃姆石為主之勃姆石粒子,「T」所示之鋁化合物粒子為以氫氧化鋁為主之氫氧化鋁粒子。
直徑3.5吋(≒9.5mm)之磁碟用無電解鎳-磷鍍覆基板之表面用各例之研磨用組成物以表三所示之條件研磨時之研磨速度,係依據研磨前後基板重量之差異所求得之結果,如表二之「研磨速度」欄所示。
將使用各例之研磨用組成物研磨後之基板用純水洗淨,然後使用Phase Shift公司製之「Micro XAM」測定研磨後基板表面之算術平均粗糙度Ra,將其結果示於表二之「算術平均粗糙度Ra」欄,並使用Phase Shift公司製之「Opti Flat」測定研磨後基板表面之算術平均起伏Wa,將其結果示於表二之「算術平均起伏Wa」欄。
計測使用各例之研磨用組成物研磨,然後用純水洗淨之基板表面之刮痕數。具體而言,將船越藥品股份有限公司製之表面檢查燈「F100Z」之光照射於基板表面,同時用目視計測刮痕數。所計測出之刮痕數小於30時評價為優(○○○),30以上小於50時評價為良(○○),50以上小於75時評價為可(○),75以上小於100時評價為稍不良(×),100以上時評價為不良(××),其結果示於表二之「刮痕數」欄。
觀察使用各例之研磨用組成物研磨,然後用純水洗淨後之基板表面有無異物附著。具體而言,在螢光燈下藉由目視觀察及使用掃描電子顯微鏡觀察。以目視及掃描電子顯微鏡均未確認異物附著時評價為優(○),以目視雖未確認異物附著,然而用掃描電子顯微鏡則可確認異物附著時評價為稍不良(×),用目視可勉強地確認異物之附著時評價為不良(××),用目視可清晰地確認異物之附著時評價為極不良(×××),其結果示於表二之「異物之附著」欄。
如表二所示,若使用實施例1~17之研磨用組成物,則就研磨速度及表面粗糙度(算術平均粗糙度Ra及算術平均起伏Wa)而言,可得到足以實用程度之數值,又就刮痕數及異物之附著而言,可得到良好之結果。
將表一中之「A」、「B」、「D」、「Q」、「S」、「T」表示之鋁化合物粒子任一種於水中混合,調製成研磨用組成物。各例之研磨用組成物中所含之鋁化合物粒子之種類及含量以及各例之研磨用組成物之pH值如表四所示。
將顯示器用丙烯酸系樹脂基板之表面用各例之研磨用組成物以表五所示之條件研磨時之研磨速度,係依據研磨前後之基板厚度之差異而求得,其結果如表四之「研磨速度」欄所示。
將使用各例之研磨用組成物研磨後之基板用純水洗淨,然後使用Phase Shift公司製之「Micro XAM」測定研磨後基板表面之算術平均粗糙度Ra,將其結果示於表四之「算術平均粗糙度Ra」欄。
計測使用各例之研磨用組成物研磨,然後用純水洗淨之基板表面之刮痕數。具體而言,將船越藥品股份有限公司製之表面檢查燈「F100Z」之光照射於基板表面,同時用目視計測刮痕數。計測之刮痕數小於50時評價為良(○○),50以上小於75時評價為可(○),75以上小於100時評價為稍不良(×),100以上時評價為不良(××),結果示於表四之「刮痕數」欄。
如表四所示,若使用實施例21~24之研磨用組成物,則就研磨速度及表面粗糙度(算術平均粗糙度Ra)而言,可得到足以實用程度之數值,又就刮痕數而言,亦可得到良好之結果。
將表一中之「A」、「R」所示之鋁化合物粒子之任一種,與鹽酸(研磨促進劑)、氯化鉀(研磨促進劑)及過氧化氫(氧化劑)一起於水中混合,調製成研磨用組成物。各例之研磨用組成物中所含之鋁化合物粒子之種類及含量以及各例之研磨用組成物之pH如表六示。又,各例之研磨用組成物中之鹽酸之含量、氯化鉀之含量及過氧化氫之含量,在任一研磨用組成物之情況均分別為1.2g/L、18.8g/L及34.2g/L。
將70μm×70μm鈀所構成之墊片散佈於半導體裝置基板之表面,使用各例之研磨用組成物以表七所示之條件研磨該表面時之研磨速度,係依據研磨前後之基板重量之差異而求得,其結果如表六之「研磨速度」欄所示。
計測使用各例之研磨用組成物研磨,然後用純水洗淨之基板表面之刮痕數。具體而言,將船越藥品股份有限公司製之表面檢查燈「F100Z」之光照射於基板表面,同時用目視計測刮痕數。計測之刮痕數小於50時評價為良(○○),50以上小於75時評價為可(○),75以上小於100時評價為稍不良(×),100以上時評價為不良(××),其結果示於表六之「刮痕數」欄。
如表六所示,若使用實施例31、32之研磨用組成物,則就研磨速度而言,可得到足以實用程度之數值,又就刮痕數而言,亦可得到良好之結果。
第一圖:顯示本發明之一實施態樣之氧化鋁粒子之一例之掃描電子顯微鏡照片。
第二圖:顯示相同實施態樣之氧化鋁粒子之另一例之二張掃描電子顯微鏡照片。
Claims (9)
- 一種氧化鋁粒子,其特徵為一次粒子之形狀為六面體,一次粒子之長寬比為1~5,當從具有六面體形狀之氧化鋁一次粒子之一個頂點起延伸之三邊中最長的邊之長度為a,最短的邊之長度為c時,該長寬比係a除以c得到之值。
- 如申請專利範圍第1項之氧化鋁粒子,其平均一次粒徑為0.01~0.6μm。
- 如申請專利範圍第1或2項之氧化鋁粒子,其α化率為5~70%。
- 如申請專利範圍第1或2項之氧化鋁粒子,其平均二次粒徑為0.01~2μm,90%粒徑除以10%粒徑得到之值為3以下。
- 如申請專利範圍第1或2項之氧化鋁粒子,其係於研磨電子零件用基板之用途中做為磨粒使用。
- 如申請專利範圍第1或2項之氧化鋁粒子,其係於研磨經鎳-磷鍍覆之研磨對象物之表面之用途中做為磨粒使用。
- 如申請專利範圍第1或2項之氧化鋁粒子,其係於研磨由貴金屬所構成之研磨對象物之用途中做為磨粒使用。
- 如申請專利範圍第1或2項之氧化鋁粒子,其係於研磨由樹脂所構成之研磨對象物之用途中做為磨粒使用。
- 一種研磨用組成物,其特徵為含有如申請專利範圍第1或2項之氧化鋁粒子及水。
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EP2322322A1 (en) | 2011-05-18 |
TW201000403A (en) | 2010-01-01 |
EP2322322A4 (en) | 2011-09-07 |
WO2009151120A1 (ja) | 2009-12-17 |
EP2322322B1 (en) | 2013-03-13 |
US20110258938A1 (en) | 2011-10-27 |
JPWO2009151120A1 (ja) | 2011-11-17 |
CN102105266A (zh) | 2011-06-22 |
KR20110038035A (ko) | 2011-04-13 |
CN102105266B (zh) | 2016-01-13 |
KR101268007B1 (ko) | 2013-05-27 |
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