TWI416865B - 使用具有場極板延伸的場效電晶體之切換式功率放大器 - Google Patents

使用具有場極板延伸的場效電晶體之切換式功率放大器 Download PDF

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TWI416865B
TWI416865B TW095126799A TW95126799A TWI416865B TW I416865 B TWI416865 B TW I416865B TW 095126799 A TW095126799 A TW 095126799A TW 95126799 A TW95126799 A TW 95126799A TW I416865 B TWI416865 B TW I416865B
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layer
nitride
dielectric
power amplifier
gallium nitride
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Scott Sheppard
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Cree Inc
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Description

使用具有場極板延伸的場效電晶體之切換式功率放大器
本發明係有關於一種功率放大器，特別係有關於一種切換式功率放大器以及適用於切換式功率放大器中的電晶體。
切換式功率放大器係適用於需要對高頻信號執行高效功率放大的應用系統，例如適用於無線通訊系統、衛星通訊系統以及進階雷達系統之功率放大器。在數位通訊系統(例如3G與4G電腦系統、WiFi、WiMax以及數位視頻廣播系統)中特別需要高功率、高頻功率放大器。對於需要高輸出功率的應用系統來說，功率放大器的功率消耗佔了系統整體功率的很大一部分。因此，期望增加通訊系統中功率放大器電路的效能。
在專利申請第11/132,619號中係揭露單級的切換式放大器電路，包括根據輸入信號的信號位準而操作於開狀態或關狀態的主動裝置開關電晶體。開關電晶體具有連接至負載網路的輸出端，負載網路係用以過濾來自開關電晶體的輸出信號，以提供窄頻輸出信號至負載阻抗。被負載電路所去除的能量係儲存於開關電容中，其中開關電容係於開關電晶體為關狀態時持續驅動輸出信號。汲極電壓係透過汲極電感而提供至開關電晶體，汲極電感係用以避免源極電流發生瞬間的改變。在一些實施例中，放大器係操作於E類模式。
在一些實施例中，切換式放大器電路包括輸入匹配級、主動級以及輸出匹配級。主動級包括與開關電容並聯的主動裝置開關電晶體。開關電晶體具有與負載電阻與負載阻抗連接的輸出端。裝置的輸出端係提供橫跨負載阻抗的電壓至輸出匹配級，以主動級的輸出阻抗轉換為電路的期望輸出阻抗。在其他實施例中，許多的主動電晶體及以及匹配網路可用以提供額外的放大器增益(例如2級放大器等)。
開關電晶體包括當操作於超過1GHz之頻率時，可維持高汲極電壓以及/或高電流位準的寬能隙金半場效電晶體(MESFET)。在一些實施例中，開關電晶體包括以氮化鎵(GaN)為基礎的高電子移動率電晶體(HEMT)。在一些實施例中，包括以氮化鎵為基礎的高電子移動率電晶體的開關電晶體的總閘極周邊約為3.6毫米。在一些實施例中，開關電晶體包括氮化鎵金半場效電晶體。在其他實施例中，開關電晶體包括具有不同寬能隙的高頻電晶體，例如矽碳化物金半場效電晶體、矽碳化物橫向擴散金屬氧化物半導體(LDMOS)、矽碳化物雙極電晶體或是氮化鎵金氧半場效電晶體(MOSFET)裝置。
在高壓縮的情況下，放大器中的場效電晶體之切換式操作需要穩健的操作於微波頻率，由於實際上在切換式操作中所需要從閘極流向源極的高輸入驅動順向電流非常大，因此難以實現。
本發明係有關於一種在高壓縮的情況下可用於切換式功率放大器之具有較穩健操作的場效電晶體。
再者，電晶體係為高電子移動率電晶體，包括閘極介電質，用以於高輸入驅動的情況下限制閘極至源極的順向傳送，並且於高壓高溫操作期間抑制閘極漏電。
再者，閘極場極板延伸可用以對增加的閘極電容具有最小影響的電場峰值執行整形。在場極板下方可使用至少兩個介電層並且提供較厚的介電質，以降低對閘極電容的影響。
根據本發明的特徵，介於兩個不同絕緣層之間的蝕刻率可用以製造閘極電極。
為使本發明之上述目的、特徵和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下。
第1圖顯示根據本發明實施例所述之單級切換式功率放大器電路模型10的示意圖。放大器10包括金屬絕緣半導體(metal－insulator－semiconductor,MIS)電晶體12包括做為開關(on/off switch)的寬能隙(wide bandgap)電晶體。在一些實施例中係藉由使用絕緣體(insulator)來將閘極與半導體主體(semiconductor body)隔開，以於高應力驅動的情況下限制從閘極至源極的正向傳導(forward conduction)。電晶體12包括氮化鎵(GaN)高電子移動率電晶體(High electron mobility transistor,HEMT)。電晶體12亦可包括具有不同寬能隙之高頻電晶體，例如矽碳化物(SiC)金半場效電晶體(MESFET)，氮化鎵金半場效電晶體，矽碳化物橫向擴散金屬氧化物半導體(LDMOS)，矽碳化物雙極(bipolar)電晶供應電壓體或是氮化鎵金氧半異質結構場效電晶體(MOSHFET)裝置。
輸入電壓信號vi施加至電晶體12的閘極，用以控制電晶體12的狀態。輸入電壓信號vi係偏向接近電晶體12的夾止(pinch－off)電壓。電晶體12的汲極係耦接至輸出節點S，且電晶體12的源極係耦接至接地。供應電壓VDD係經由電感LD S 而耦接至輸出節點S。輸出節點S處的電壓係施加至串聯諧振電路(resonant circuit)14，串聯諧振電路14包括電感Lo 以及電容Co 。在一些應用系統中，串聯諧振電路14可以為帶通(bandpass)電路，被調諧為通過以放大器電路10之期望輸出頻率fo 為中心之較小的頻率範圍。在其他應用系統中(例如雷達應用系統)，串聯諧振電路可以被調諧為通過較大的頻率範圍。在輸出頻率處，具有負載之電晶體輸出係相當於R＋jX，其中X係為諧振電路之輸出端的阻抗(reactance)。
當電晶體12為導通狀態時(即電晶體飽和)，裝置作為接地之短路(short circuit)，用以將節點S處的電壓拉低至零。因此，流經電感LD S 的電流會呈線性的增加。當電晶體不導通時，流經電感LD S 的電流會被導入(steer)汲極－源極電容CD S ，使得節點S處的電壓上升直到達到最大值。當節點S處的電壓達到最大值時，由於汲極－源極電容CD S 開始將電流流回負載，因此節點S處的電壓開始下降。諧振電路14會被調諧為穩態(steady state)，因此於電晶體再次導通之前，節點S處的電壓會回到約為零。
在理想的狀態下，諧振電路14僅傳遞節點S處之電壓的基頻(fundamental frequency)。輸入電壓vi可傳送放大輸出信號中的調變頻率或是相位資訊。
如第2圖所示，放大器電路20可包括具有輸入端10A與輸出端10B之E類放大器(class E amplifier)10。輸入匹配網路(matching network)22係耦接至輸入端10A，且輸出匹配網路24係耦接至放大器10之輸出端10B。當輸出匹配網路24將放大器10之輸出阻抗轉換為期望輸出阻抗(例如50歐姆)時，藉由輸入匹配網路22可使輸入信號vi之阻抗與放大器10之輸入阻抗一致。
第3圖與第4圖係顯示根據本發明兩個實施例所述之場效電晶體的剖面圖。
在第3圖中的電晶體架構係與上述專利申請第11/132,619號中的架構相同。例如，基底30可以為矽碳化物(silicon carbide)，緩衝或是成核層(nuclear layer)32可以為氮化鋁鎵(AlGaN)或氮化鎵(GaN)，通道層34可以為氮化銦鋁鎵(InAlGaN)、氮化鎵或氮化鋁鎵，且阻障層(barrier layer)36可以為第三族的氮化物。如專利申請第11/132,619號中所述，設置於基底30上的緩衝層32係提供介於基底30與剩下的裝置之間適當的晶形轉變(crystalline transition)。緩衝層32可包括至少一氮化銦鋁鎵層。在特定實施例中，緩衝層32可包括氮化鎵、氮化鋁(AlN)或氮化鋁鎵。矽碳化物之晶格(crystal lattice)比藍寶石(Al2 O3 )之晶格更符合第三族的氮化物，對於第三族的氮化物而言，氧化鋁是一種常用來當作基底的材料。較接近的晶格匹配將使得第三族的氮化物比於藍寶石中所取得的晶格具有更好的品質。矽碳化物亦具有很高的導熱性(thermal conductivity)，使得設置於矽碳化物上之第三族的氮化物的總輸出功率通常不會如同形成於藍寶石上相同的裝置一樣受到基底之熱散逸的限制。同樣的，半絕緣矽碳化物基底的可用性可用來隔離裝置並且降低寄生電容。在美國專利第6,316,793，6,586,781，6,548,333,5，192,987以及5,296,395號中以及美國專利申請公開第2002/0167023與2003/0020092號中所揭露的高電子移動率電晶體(HEMT)架構在此係作為本發明之參考。
雖然半絕緣矽碳化物係為較佳的基底材料，然而在本發明實施例中可使用任何適當的基底，例如藍寶石、氮化鋁、氮化鋁鎵、氮化鎵、矽、砷化鎵(GaAs)、LGO、氧化鋅(ZnO)以及磷化銦(InP)等。再者，基底可以為可導電、半絕緣或是高阻抗。在一些實施例中包括MMIC，在MMIC中係使用半絕緣或是高阻抗基底。在一些實施例中亦可以形成適當的緩衝層。
在阻障層36上設置第一介電層38，介電層38上具有第二介電層40。接觸孔(contact hole)係蝕刻穿透介電層38、40以形成源極接點42以及汲極接點44。較佳的蝕刻劑(etchant)僅可用以對具有形成於閘極介電層38上的閘極接點46之介電層40執行蝕刻。例如，介電層38可以為氧化矽，且介電層40可以為氮化矽。藉由相同的材料在製程中不同的時間沈積可形成兩層介電層。亦可以使用其他已知的阻障層。
根據本發明的特徵，閘極接點46可以從介電層40朝汲極延伸，如所示之46’係用以形成場極板延伸。閘極電極的場極板延伸係朝覆蓋於較厚的介電層之汲極，較厚的介電層可被設計用以對增加的閘極電容具有最小影響的電場峰值執行整形。場極板使亦可使用於其他的應用系統。
第4圖係顯示根據本發明另一實施例所述之場效電晶體的剖面圖。在此實施例中的基底30與層32－36係與第3圖相同。然而，在此實施例中係使用三層介電層，包括第3圖中的介電層38、40以及第三介電層48。在此實施例中的閘極接觸開口係蝕刻穿透介電層38、40，且第三介電層係沈積於閘極開口。閘極金屬化係沈積於介電層堆疊以形成閘極電極46，閘極電極46可具有較短的閘極長度LG 以及比其他架構低的電容值。
在第3圖與第4圖中，介電層38具有厚度d1，介電層40具有厚度d2，且介電層48具有厚度d3。將介電層的厚度d1、d2以及d3最佳化以確實提供VG D ，維持頻率響應並且對Cg d 與Cg s 執行最小化。閘極長度係LG 被調整為適用於感興趣的操作頻率。第4圖中的介電層38與40可以為二氧化矽與氮化矽或是如同第3圖具有相同的材料，而介電層48可以為二氧化矽。為了達到最佳效益，上介電層與下介電層應該比中間介電層具有更高的能隙。
由於此裝置可以避免在電晶體導通的部分週期期間產生不利的較大順向閘極電流，因此將裝置使用於切換式放大器可以使其具有可靠的操作。
美國專利公開第2003/0020092A 1號中係揭露了可用以實現本發明之金屬接點以及絕緣閘極架構。因此，本發明雖以較佳實施例揭露如上，然其並非用以限定本發明的範圍，任何熟習此項技藝者，在不脫離本發明之精神和範圍內，當可做些許的更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10．．．放大器
12．．．電晶體
14．．．串聯諧振電路
Vi．．．輸入電壓信號
VD D ．．．供應電壓
LD S ．．．電感
S．．．節點
CD S ．．．汲極－源極電容
Lo ．．．電感
Co ．．．電容 R．．．電阻
22．．．輸入匹配網路
24．．．輸出匹配網路
10A．．．輸入端
10B．．．輸出端
30．．．基底
32．．．緩衝層
34．．．通道層
36．．．阻障層
38．．．介電層
40．．．介電層
42．．．源極接點
44．．．汲極接點
46．．．閘極接點
LG．．．閘極長度
d1．．．厚度
d2．．．厚度
d3．．．厚度
48．．．介電層
20．．．放大器電路
第1圖係顯示根據本發明實施例所述之切換式功率放大器的示意圖。
第2圖係顯示根據本發明實施例所述之切換式功率放大器的功能方塊圖。
第3圖係顯示適用於根據本發明實施例所述之切換式功率放大器的高電子移動率電晶體的剖面圖。
第4圖係顯示適用於根據本發明另一實施例所述之切換式功率放大器的高電子移動率電晶體的剖面圖。
10．．．放大器
12．．．電晶體
14．．．串聯諧振電路
Vi．．．輸入電壓信號
VD D ．．．供應電壓
LD s ．．．電感
S．．．節點
CD s ．．．汲極－源極電容
Lo ．．．電感
Co ．．．電容
R．．．電阻

Claims (22)

  1. 一種切換式功率放大器，適用於高頻應用，包含：(a)一高電子移動率的場效電晶體，包括一複合半導體通道層及於該複合半導體通道層上的一阻障層且具有一源極端、一汲極端以及一閘極接點，並藉由一介電質將該閘極接點與該阻障層隔開，其中該介電質包含在該阻障層上的第一、第二及第三介電層，其中該第一介電層係在該阻障層上，該第二介電層在該第一介電層上且該第三介電層係在該第一及第二介電層上及在延伸通過該第一及第二介電層之通路中的該阻障層上，且其中該閘極接點藉由該第三介電層與該第一及第二介電層隔離且與該阻障層隔離，(b)一信號輸入端，耦接至該控制端，(c)一電力端，導電地耦接至該第二端，(d)一接地端，耦接至該第一端，(e)一諧振電路，將該第二端耦接至一輸出端，以及(f)一電阻，將該輸出端耦接至該接地端，藉此一輸入信號係控制該電晶體的導通與否，且當從一電力源至該第二端的電流增加而導通該電晶體時，該第二端係耦接至接地，且當該電晶體關閉時，來自該電力源的電流係導入該電晶體的內部電容，該第二端上的電壓增加至一最大值並接著減少，該第二端的電壓係藉由該諧振 電路耦接至該輸出端。
  2. 如申請專利範圍第1項之切換式功率放大器，更包括從該閘極接點朝該汲極端的一場極板延伸。
  3. 如申請專利範圍第2項之切換式功率放大器，其中該介電質包括至少兩層介電材料。
  4. 如申請專利範圍第3項之切換式功率放大器，其中該兩層介電材料包括相同的材料。
  5. 如申請專利範圍第4項之切換式功率放大器，其中該介電質包括一第三層介電材料。
  6. 如申請專利範圍第3項之切換式功率放大器，其中該兩層介電材料包括不同的材料。
  7. 如申請專利範圍第6項之切換式功率放大器，其中該兩層包括氧化矽以及氮化矽。
  8. 如申請專利範圍第7項之切換式功率放大器，其中該介電層包括一第三層氧化矽，該氮化矽係設置於該些氧化矽層之間。
  9. 如申請專利範圍第2項之切換式功率放大器，其中該電晶體包括一高電子移動率電晶體(HEMT)且該半導體材料包括一寬能隙複合材料。
  10. 如申請專利範圍第9項之切換式功率放大器，其中該半導體材料係選自包括碳化矽以及週期表第三族的氮化物之群組。
  11. 如申請專利範圍第9項之切換式功率放大器，其中該電晶體包括一複合半導體基底、形成在該基底上的一 緩衝層、形成在該緩衝層上的一通道層以及形成在該通道上的一阻障層。
  12. 如申請專利範圍第11項之切換式功率放大器，其中該基底包括碳化矽以及其他層包括第三族的氮化物材料。
  13. 如申請專利範圍第12項之切換式功率放大器，其中該基底包括碳化矽，該緩衝層包括氮化銦鋁鎵、氮化鎵、氮化鋁鎵或氮化鋁，該通道層包括氮化銦鎵、氮化銦鋁鎵、氮化鎵或氮化鋁鎵，且該阻障層包括一第一第三族氮化物。
  14. 一種場效電晶體，適用於一切換式功率放大器，包含：(a)一複合半導體基底，(b)一緩衝層，形成在該基底上，(c)一通道層，形成在該緩衝層上，(d)一阻障層，形成在該通道層上，(e)至少兩層介電層，覆蓋該阻障層，(f)源極以及汲極電極，延伸通過該兩層介電層，並且連接該阻障層，以及(g)一閘極電極，設置於介於該源極與汲極電極之間的介電材料上其中該閘極電極藉由該至少兩層介電層中之至少之一者與該阻障層隔離，其中在(e)中的該至少兩層介電層包括氧化矽以及氮化矽。
  15. 如申請專利範圍第14項之場效電晶體，更包括：(h)一場極板延伸，從覆蓋該至少兩層介電層的閘極電極朝該汲極端。
  16. 如申請專利範圍第15項之場效電晶體，其中(e)包括一第三介電層，該第三介電層包括氧化矽，該氮化矽層係介於該兩層氧化矽之間。
  17. 如申請專利範圍第15項之場效電晶體，其中該切換式功率放大器係如申請專利範圍第6項所界定，其中該半導體材料係選自包括碳化矽以及週期表第三族的氮化物之群組。
  18. 如申請專利範圍第17項之場效電晶體，其中該切換式功率放大器係如申請專利範圍第8項所界定，其中該基底包括碳化矽以及其他層包括第三族的氮化物材料。
  19. 如申請專利範圍第18項之場效電晶體，其中該基底包括碳化矽，該緩衝層包括氮化銦鋁鎵、氮化鎵、氮化鋁鎵或氮化鋁，該通道層包括氮化銦鎵、氮化銦鋁鎵、氮化鎵或氮化鋁鎵，且該阻障層包括一第一第三族氮化物。
  20. 如申請專利範圍第15項之場效電晶體，其中該半導體材料係選自包括碳化矽以及週期表第三族的氮化物之群組。
  21. 如申請專利範圍第20項之場效電晶體，其中該基底包括碳化矽以及其他層包括第三族的氮化物材料。
  22. 如申請專利範圍第21項之場效電晶體，其中該基底包括碳化矽，該緩衝層包括氮化銦鋁鎵、氮化鎵、氮化鋁鎵或氮化鋁，該通道層包括氮化銦鎵、氮化銦鋁鎵、氮化鎵或氮化鋁鎵，且該阻障層包括一第一第三族氮化物。
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