TWI409315B - Laser processing adhesive sheet - Google Patents
Laser processing adhesive sheet Download PDFInfo
- Publication number
- TWI409315B TWI409315B TW096137333A TW96137333A TWI409315B TW I409315 B TWI409315 B TW I409315B TW 096137333 A TW096137333 A TW 096137333A TW 96137333 A TW96137333 A TW 96137333A TW I409315 B TWI409315 B TW I409315B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- base film
- laser processing
- adhesive sheet
- adhesive
- Prior art date
Links
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- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Description
本發明係關於雷射加工用黏著片材,更詳細而言,係關於藉由雷射光切割半導體晶圓等被加工物時使用之雷射加工用黏著片材。
近來,伴隨電氣.電子設備之小型化等,零件亦趨向小型化.高精細化。因此,於各種材料之切割加工中均要求高精細.高精度化。尤其於對小型化.高密度化有高要求之半導體領域,近年來使用熱損傷少且可進行高精細加工之雷射光之半導體晶圓切割方法受到關注。
該技術係如下之方法,例如,將於基板上形成有各種電路並進行有表面處理之被加工物固定於切割片材上,藉由雷射光切割被加工物,使其成為小片之晶片(例如專利文獻1)。又,提出有如下之切割片材,即,包含含有基材膜之基材、以及形成於該基材表面之黏著劑層,黏著劑層藉由雷射光而被切割,但基材膜並未被切割(如專利文獻2)。
[專利文獻1]日本專利特開2004-79746號公報[專利文獻2]日本專利特開2002-343747號公報
然而,於被加工物之切割中使用雷射光之情形時,非常難以控制為僅切割黏著劑層而不切割基材膜。即使可僅切割黏著劑層,亦有於雷射光照射之部位,基材膜之背面局部牢固附著於切割裝置之加工用卡盤台(chuck table)上之情形。因此,存在對後續步驟,即拉伸基材膜從而將被加工物剝離,並將其個別回收之步驟等帶來障礙之問題。
本發明係鑒於如此之情況而完成者,其目的在於提供一種雷射加工用黏著片材,該黏著片材於使用雷射光切割半導體晶圓等被加工物之情形時,可將基材膜自身之切割限制於最小限度,且防止基材膜局部附著於加工用臺面,從而容易且高效地進行之後之步驟。
本發明者等人對於藉由雷射光加工裝置進行切割時之雷射光照射之部位,基材膜與加工用臺面局部牢固附著之現象進行了反覆銳意之研究,結果設想,雷射光之能量到達基材膜之背面,由於局部集中而發熱,從而引起基材膜材料之熔融等,係與雷射光之能量之集中及發熱有關,並發現可將該等作用限制於最小限度之特定之必要條件或其等之組合,從而完成本發明。
即,本發明之雷射加工用黏著片材係於基材膜之表面積層黏著劑層而形成之雷射加工用黏著片材,上述基材膜係於背面側具備具有凹凸之接觸減少層而成。
如此之雷射加工用黏著片材較好的是,接觸減少層將算術平均粗糙度Ra為1.0 μm以上之凹凸賦予基材膜背面之外表面。
接觸減少層較好的是藉由噴砂、壓紋處理或表面塗佈法而形成。
又,基材膜較好的是具有50%以上之透光率,或含有至少1層聚烯烴系樹脂,或含有熔點為80℃以上之層。
作為聚烯烴系樹脂,較好的是選自由聚乙烯、聚丙烯、乙烯共聚物、丙烯共聚物、乙烯-丙烯共聚物所組成之群中之一種以上。
又,基材膜較好的是進而含有至少斷裂伸長率不同之2層以上之層,且與接觸減少層相鄰配置斷裂伸長率較大之層,斷裂伸長率較大之層較好的是100%以上。
根據本發明之雷射加工用黏著片材,藉由減少基材膜之背面與加工用臺面之接觸面積,可有效地防止基材膜之背面局部附著於切割裝置之加工用臺面上之現象,該現象起因於:於雷射光之照射部位,雷射光之能量局部集中而產生之基材膜之熔融。因此,可容易且高效地進行其後續之步驟,即,拉伸基材膜而將被加工物與黏著劑層一同剝離,並將其個別回收之步驟。
尤其於接觸減少層將算術平均粗糙度Ra為1.0 μm以上之凹凸賦予基材膜背面之外表面之情形時,可有效地減少基材膜與加工用臺面之接觸面積。
又,於基材膜具有50%以上之透光率之情形時,可防止基材膜自身由於雷射光而引起之劣化。
進而,於基材膜含有至少1層聚烯烴系樹脂之情形時,可將對於所使用之雷射光之透光率及/或吸光係數設定為較高,從而可降低基材膜自身之加工性,即變得難以切割。
尤其於聚烯烴系樹脂係選自由聚乙烯、聚丙烯、乙烯共聚物、丙烯共聚物、乙烯-丙烯共聚物所組成之群中之1種以上之情形時,可更顯著地發揮上述效果。
又,於基材膜含有熔點為80℃以上之層之情形時,於基材膜之背面,可更有效地防止基材膜之熔融,從而可抑制局部附著於加工用臺面上之現象。
又,於基材膜進而含有至少斷裂伸長率不同之2層以上之層,且與接觸減少層相鄰配置斷裂伸長率較大之層之情形時,斷裂伸長率較大之層為100%以上時,可將對於所使用之雷射光之透射率及/或吸光係數設定為更高,因此可防止基材膜自身之切割。
又,於接觸減少層係藉由噴砂、壓紋處理或者表面塗佈法形成之情形時,可容易且簡單地形成接觸減少層。
本發明之雷射加工用黏著片材主要包含:於一面具備具有凹凸之接觸減少層之基材膜、與於此基材膜之另一面上形成之黏著劑層。
形成於基材膜之背面之具有凹凸之接觸減少層,主要係用以減少基材膜之背面與加工用臺面之接觸面積之層,以實現即使由於雷射光之照射而使基材膜熔融等,基材膜自身亦不會黏著或牢固地附著於加工用臺面等。
接觸減少層將例如算術平均粗糙度Ra為1.0 μm以上之凹凸賦予基材膜背面之外表面。尤其是Ra更好的是1.2 μm以上、1.3 μm以上,進而好的是1.5 μm以上。藉由如此之凹凸,可減少基材膜自身與加工用臺面之接觸面積,並且於基材膜和加工用臺面之間賦予適度之空隙,可有效地將來自基材膜表面側之雷射光之能量自雷射加工用黏著片材中釋放。
接觸減少層例如可藉由噴砂、壓紋處理或表面塗佈等於該領域公知之方法,於基材膜之背面側,即形成黏著劑層之相反側,以其自身成為基材膜之一部分之方式形成。或者,亦可另外藉由噴砂、壓紋處理或表面塗佈等形成於一面具有凹凸之膜後,貼附於基材膜之背面使之一體化。該情形時之凹凸之凹陷部分可藉由微細之貫通孔而形成。即,可藉由於基材膜自身上形成貫通孔而形成接觸減少層,亦可與基材膜分開,另外形成帶有貫通孔之膜後,將其貼附於基材膜之背面使之一體化。
進而,接觸減少層亦可使用例如無機化合物、金屬或有機化合物等之任一者或者將該等組合之材料所形成之粒子,形成於基材膜之背面側。
該等粒子具體而言,作為無機化合物,可使用:二氧化矽(煙霧狀二氧化矽、無水矽酸、沈澱性二氧化矽、熔融二氧化矽、結晶二氧化矽、超微粉無定形二氧化矽等);氧化鋁、氧化鈦、氧化錫、氧化鋅、氧化錫、氧化鈣、氧化鎂等金屬氧化物;氮化矽、氮化鋁等金屬氮化物;SiC等金屬碳化物;碳酸鉀、碳酸鈉、碳酸鈣、碳酸鎂等金屬碳酸鹽;氫氧化鋁、氫氧化鎂等金屬氫氧化物;鈦酸鋇、磷酸鈣、矽酸鈣、石膏、沸石、滑石、黏土、硫酸鋇、雲母、矽藻土等之粒子;作為金屬,可使用金、銀、鈀、鉑、鎳、鋁、銅、鈦、鎢、鉭等高熔點金屬等之粒子;作為有機化合物,可使用後述之形成基材膜之樹脂粒子,其中,可利用:聚乙烯、聚丙烯等聚烯烴;PET等聚酯;尼龍等熱塑性樹脂;熱塑性聚醯亞胺;PTFE、ETFE等含氟聚乙烯;聚碳酸酯;聚酯等熔點較高之樹脂粒子等。可使該等粒子分散/懸浮於適當之溶劑中,塗佈/乾燥於基材膜之背面,形成具有凹凸之接觸減少層;或者亦可將該等粒子與包含上述樹脂等之黏合劑混合,形成表面具有凹凸之膜後,將其貼附於基材膜上而一體化,從而形成接觸減少層;亦可將粒子混合至形成基材膜時之原料中,形成基材膜,從而形成於其背面側具有凹凸之接觸減少層。
如此之粒子,為有效地發揮作為接觸減少層之功能,較好的是例如為球狀、針狀、片狀等各種形狀,且大小為1 μm左右至幾百μm左右之粒子。使用粒子時之粒子之量,必須考慮所使用粒子之種類及大小等,適當調整為可實現上述凹凸之量。
基材膜可自具有自持性之眾所周知之膜中選擇。基材膜較好的是具有均勻厚度之片狀,亦可為網狀等形態。又,基材膜既可為單層,亦可為2層以上之多層結構。
作為基材膜之材料,例如可列舉如下材料:包含丙烯酸系樹脂、聚胺酯系樹脂、聚降冰片烯系樹脂、聚烷二醇系樹脂、聚烯烴系樹脂(聚苯乙烯系樹脂、聚乙烯系樹脂等)、聚醯亞胺系樹脂、聚酯系樹脂、環氧系樹脂、聚醯胺系樹脂、聚碳酸酯系樹脂、矽系樹脂、氟系樹脂等之高分子膜;銅、鋁、不鏽鋼等之金屬片材;包含PP、PVC、PE、PU、PS、PO或PET等聚合物纖維,人造纖維或醋酸纖維素等合成纖維,棉、絲或羊毛等天然纖維以及玻璃纖維或碳纖維等無機纖維之不織布;藉由延伸加工、含浸加工等對該等材料賦予物理或光學功能的片材;含有二烴系(苯乙烯-丁二烯共聚物、丁二烯等)、非二烯系(異丁烯-異戊二烯、氯化聚乙烯、胺基甲酸酯系等)、熱塑性系(熱塑性彈性體等)等橡膠成分之片材;或者組合1種以上該等材料而成者等。其中,較好的是聚烯烴系樹脂。
尤其是該等基材膜材料,若如以下所說明,考慮到透光率、熔點、斷裂伸長率、進而吸光係數、厚度、積層狀態、斷裂強度、比熱、蝕刻速率、Tg、熱變形溫度以及比重等之至少1種特性,較好的是2種以上特徵,更好的是所有特性,則較好的是選擇不易被切割被加工物之雷射光切割之材料,或者不易因雷射光而附著於加工用臺面上之材料。
基材膜之厚度並無特別限制,例如適合的是具有50 μm以上之厚度,更好的是具有100 μm以上、150 μm以上、50~1000 μm左右之厚度。藉此,可確保對半導體晶圓之貼合、半導體晶圓之切割以及自半導體晶圓上剝離等各步驟之操作性與作業性。
基材膜於如上所述之適用範圍內之膜厚中,相對於雷射光之透射率、尤其相對於波長為355 nm左右至600 nm左右之雷射光之透光率較好的是50%左右以上、55%左右以上、60%左右以上、65%左右以上,進而較好的是67%左右以上、70%左右以上。透光率例如可使用紫外可見分光光度計進行測定。該情形時之透光率表示為未形成接觸減少層之基材膜之狀態下的透光率。
又,基材膜較好的是含有熔點為80℃以上之層。藉此,可有效地防止由於雷射光之照射而引起之基材膜之熔融。熔點更好的是85℃以上、90℃以上、95℃以上、100℃以上、110℃以上。於基材膜為單層結構之情形時,構成該基材膜之層自身之熔點必須為80℃以上,於基材膜為積層結構之情形時,並非所有層之熔點均必須為80℃以上,較好的是至少1層為80℃以上熔點之層。該情形時,該1層較好的是作為與接觸減少層相鄰之層而配置,進而更好的是於雷射加工時之背面側(例如,與卡盤台相接觸之側)配置,即,作為接觸減少層而配置。
基材膜尤其好的是具有材料不同之2層以上之積層結構。此處所謂之材料不同,不僅包含其組成不同者,亦包含組成相同但由於分子結構、分子量等不同而使特性不同者。例如,適合的是將上述吸光係數、熔點、斷裂強度、斷裂伸長率、透光率、比熱、蝕刻率、熱導率、Tg、熱變形溫度、熱分解溫度、線膨脹係數及比重等之至少1種特性不同之材料積層而成者。
其中,於2層以上之積層結構中,較好的是至少1層係不含苯環之樹脂、鏈狀之飽和烴系樹脂、例如聚烯烴系樹脂。作為聚烯烴系樹脂,如上所述,可使用聚乙烯(例如低密度聚乙烯、直鏈低密度聚乙烯、高密度聚乙烯等)、聚丙烯(例如拉伸聚丙烯、非拉伸聚丙烯等)、乙烯共聚物、丙烯共聚物、乙烯-丙烯共聚物、聚丁二烯、聚乙烯醇、聚甲基戊烯、乙烯-醋酸乙烯酯共聚物、聚醋酸乙烯酯等中之1種以上,尤其好的是乙烯系(共)聚合物及丙烯系(共)聚合物,進而聚乙烯、聚丙烯、乙烯共聚物、乙烯-丙烯共聚物中之至少1種。藉由選擇該等材料,可謀求適當之伸展性與對於雷射加工之適當之強度的平衡。再者,構成接觸減少層自身之材料較好的是亦包含該等樹脂、或者含有該等材料而構成。
於基材膜為積層結構之情形時,較好的是含有聚乙烯樹脂層與聚丙烯樹脂層兩者。尤其好的是含有該等層之2層或3層之結構。該情形時,更好的是聚丙烯樹脂層配置於遠離黏著劑層之位置。例如,於2層結構之情形時,較好的是於基材膜之背面側配置聚丙烯樹脂層,於黏著劑層側配置聚乙烯樹脂層,於3層結構之情形時,較好的是於基材膜之背面側或者其朝向黏著劑層之上一層側配置聚丙烯樹脂層,於黏著劑層側配置聚乙烯樹脂層。其原因在於:藉由如此之配置,即使於雷射加工時部分基材膜損傷,由於在最背面側存在作為比較軟質之樹脂之聚丙烯樹脂層,可確保基材膜之適當之伸展性。
又,基材膜較好的是具有100%以上之斷裂伸長率。斷裂伸長率例如可藉由萬能拉伸試驗機,以拉伸速度200 mm/分鐘,基於JIS K-7127而測定。於基材膜為積層結構之情形時,並非所有層均必須具有100%以上之斷裂伸長率,較好的是至少具有100%以上斷裂伸長率之層與接觸減少層相鄰配置。又,具有100%以上斷裂伸長率之層自身亦可為構成減少接觸層之層。藉此,於進行雷射加工後,拉伸切割片材易於使切割被加工物而形成之晶片分離,故較好。
再者,基材膜較好的是吸光係數為65以下。進而更好的是60以下、55以下、50以下、45以下、40以下。此處,吸光係數可如下測定:例如,由使用島津製作所製造之分光光度計MPS-2000測定之波長355 nm之透光率I/I0
、樣品厚度d,根據朗伯-比爾定律(Lambert Beer's law)(I/I0
=exp-
αd
)求出吸光係數α。其中,測定波長並非必須為355 nm,亦可為248~1100 nm左右之範圍,較好的是248~800 nm、248~600 nm左右之範圍。於基材膜為積層結構之情形時,並非各層之吸光係數均必須為65以下,只要積層狀態之基材膜具有65以下之吸光係數即可。藉由使吸光係數為65以下,可將基材膜對雷射光之吸收限制於最小限度,從而可防止基材膜自身被雷射光加工。
又,基材膜較好的是比熱較大者。例如,比熱較好的是0.5左右以上、0.7左右以上、0.8左右以上、1.0左右以上、1.1左右以上、1.2左右以上。藉由使比熱較大,基材膜自身難以被由雷射光產生之熱量加熱,其熱量之一部分容易溢出基材膜外部。其結果,基材膜變得難以加工,可將基材膜之切割限制於最小限度,且可防止背面局部附著於加工用臺面上。比熱可藉由JIS K7123而測定。具體而言,以示差掃描熱析儀(DSC)測出使試料片以10℃/min升溫所需之熱量而求得。
又,基材膜較好的是含有至少斷裂強度不同之2層以上之層。此處,斷裂強度可藉由萬能拉伸試驗機,以延伸速度200 mm/分鐘,基於JIS K-7127而測定。斷裂強度之差異並無特別限制,例如,適合的是20 MPa左右以上、50 MPa左右以上。該情形時,更好的是斷裂強度較大之層配置於遠離黏著劑層之位置。即,較好的是於基材膜之背面配置伸展性良好之層,該伸展性良好之層配置有具有難以被雷射光切割之強度之層。但若楊氏模量(初期彈性模量)過大,則有延展性出現不良之虞,因此較好的是例如150 MPa左右以下、120 MPa左右以下、100 MPa左右以下。
進而,基材膜較好的是蝕刻率較低者。例如,蝕刻率較好的是於1~5 J/cm2
左右之雷射光強度下為0.3~1.5μ
m/脈衝,更好的是0.3~1.2μ
m/脈衝、0.3~1.1μ
m/脈衝左右。尤其好的是於1~2 J/cm2
左右之雷射光強度下為0.9μ
m/脈衝以下、0.8μ
m/脈衝以下、0.7μ
m/脈衝以下。藉由使蝕刻率較低,可防止基材膜自身之切割。
基材膜之玻璃轉移點(Tg)較好的是50℃左右以下,30℃、20℃或0℃左右以下,熱變形溫度較好的是200℃左右以下,190℃、180℃、170℃左右以下,比重較好的是1.4 g/cm3
左右以下、1.3 g/cm3
左右以下、1.2 g/cm3
左右以下、1.0 g/cm3
左右以下。藉由具有該等特性,將基材膜之切割限制於最小限度,且防止背面局部附著於加工用臺面上,因此較為有利。Tg與熱變形溫度例如可利用JIS K7121之通常之塑膠之轉移溫度之測定方法(具體而言,示差熱分析(DTA)、示差掃描熱分析(DSC)等)而測定。尤其是熱變形溫度可藉由例如基於JIS K7244-1之方法,作為軟化開始溫度。又,比重例如可利用JIS K7112之通常已知之塑膠之密度(比重)測定方法(具體而言,水中置換法、比重瓶法、沈浮法、密度梯度法等)而測定。
再者,基材膜之表面,為提高與加工裝置之臺面等相鄰材料之密著性、保持性等,可實施如下公知之表面處理,例如,鉻酸處理、臭氧曝露、火焰曝露、高壓電擊曝露以及離子化放射線處理等化學或物理處理,或者使用底塗劑(例如後述之黏著物質)進行塗覆處理等。
形成於本發明之雷射加工用黏著片材上之黏著劑層並無特別限定,例如,可使用含有藉由紫外線、電子束等放射線硬化之能量線硬化性樹脂、熱硬化性樹脂及熱塑性樹脂等之該領域公知之黏著劑組成物而形成。特別為提高被加工物之剝離性,較好的是使用能量線硬化性樹脂。其原因在於:藉由照射能量線,於黏著劑內形成立體網狀結構,因此可使接著強度降低,於使用後易於剝離。該等黏著劑並無限定,例如,可使用日本專利特開2002-203816號、日本專利特開2003-142433號、日本專利特開2005-19607號、日本專利特開2005-279698號、日本專利特開2006-35277號、日本專利特開2006-111659號等中揭示者。
具體而言,可列舉配合有天然橡膠及各種合成橡膠等橡膠、或者丙烯腈以及由具有碳原子數1~20左右之直鏈或支鏈烷基之丙烯酸烷基酯或甲基丙烯酸烷基酯製造之聚(甲基)丙烯酸烷基酯等丙烯酸系聚合物的黏著劑。
於黏著劑中可添加多官能性單體作為交聯劑。作為交聯劑,可列舉己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯以及丙烯酸胺基甲酸酯等。該等可單獨使用,亦可組合2種以上使用。
為製成能量線硬化型黏著劑,較好的是組合可藉由光照射而容易地發生反應之單體或低聚物,即所謂之光聚合性化合物。作為該等之例,可列舉胺基甲酸酯、甲基丙烯酸酯、三甲基丙烷三甲基丙烯酸、四羥甲基甲烷四甲基丙烯酸酯以及1,4-丁二醇二甲基丙烯酸酯等。
該情形時,亦可含有光聚合起始劑。作為起始劑,可列舉4-(4-羥基乙氧基)苯基(2-羥基-2-丙基)酮等苯乙酮化合物、安息香乙醚等安息香醚化合物、縮酮化合物、芳香族磺醯氯化合物、光活性肟化合物以及二苯甲酮化合物。該等物質可單獨使用,亦可組合2種以上使用。
為製成熱敏性黏著劑,可使用所謂之熱發泡成分(分解型或微膠囊型)。例如,參照歐洲專利第0523505號。
視需要,可於黏接劑中混合增黏劑、填充劑、顏料、抗氧化劑或穩定劑、軟化劑等任意之添加劑。
黏著劑層之厚度並無特別限定,若考慮到可獲得充分之接著強度,並且於將黏著片材自半導體晶圓等上取下後,不會於其上殘存不希望之黏著劑殘渣,則例如可舉出300μ
m左右以下、3~200μ
m左右。
本發明之雷射加工用片材,可藉由該領域中公知之方法形成。例如,如上所述,製備黏著劑成分,將其塗佈/乾燥於基材膜上而形成。作為黏著劑成分之塗佈方法,可採用棒塗、氣刀塗佈、凹版塗佈、凹版反向塗佈、反輥塗佈、唇口塗佈、模塗、浸漬塗佈、平版印刷、快乾印刷、絲網印刷等各種方法。又,亦可採用於剝離襯墊上形成黏著劑層後,將其貼合於基材膜上之方法等。
本發明之雷射加工用黏著片材可較好地用於藉由雷射光之加工。例如,具有400 nm以下之振盪波長之雷射,具體而言,可列舉振盪波長為248 nm之KrF準分子雷射(excimer laser)、308 nm之XeCI準分子雷射、YAG雷射之三次諧波(355 nm)、四次諧波(266 nm)。又,亦可使用具有400 nm以上之振盪波長之雷射(例如波長為750~800 nm左右之鈦-藍寶石雷射等,脈衝寬度1 e-9
秒(0.000000001秒)以下)。
本發明之雷射加工用黏著片材,通常可用於半導體晶圓,例如矽晶圓、鍺晶圓、鎵.砷晶圓、電路基板、陶瓷基板、金屬基板、半導體雷射等之發光或受光元件基板、MEMS(Micro Electro Mechanical System)基板及半導體封裝等。即,於使用雷射光進行切割加工前,例如貼合於切割裝置之半導體晶圓等之加工用臺面一側,於該等半導體晶圓切割時以及於後續步驟中經單片化之晶片加以支持固定。
於如此之使用中,本發明之雷射加工用黏著片材,即使於雷射光之照射部分,基材膜之一部分熔融,但由於基材膜與加工用臺面之接觸面積小,因而可將基材膜之背面局部附著於切割裝置之加工用臺面上之現象限制於最小限度,並且由於可於接觸減少層與加工用臺面之間有效地導入空隙,因而雷射光產生之能量之一部分可通過該空隙而有效地自基材膜中溢出,從而可降低基材膜之熔融本身。並且,雖然黏著劑層或者黏著劑層與部分基材膜與半導體晶圓一同被切割,但加工用臺面側之基材膜不易被切割,可防止經單片化之晶片等淩亂或落下。
以下,具體說明本發明之雷射加工用黏著片材,但本發明並不限定於該等實施例。
(黏著劑溶液之製備)將100重量份之使丙烯酸丁酯/丙烯酸乙酯/丙烯酸2-羥乙酯/丙烯酸以60/40/4/1之重量比共聚合而成之數量平均分子量約50萬的丙烯酸系聚合物、3重量份之異氰酸酯系交聯劑(日本聚胺酯公司製造,CORONET HL)及2重量份之環氧系交聯劑(日本三菱瓦斯化學公司製造,Tetrad C)加入至500重量份之甲苯中,均勻溶解、混合,製備丙烯酸系黏著劑溶液(1)。
(附帶減少接觸層之雷射加工用黏著片材之形成)使用具有1.0 μm、3.0 μm、5.0 μm、10 μm之加工深度之加熱加工用輥(YURI ROLL CO.,LTD製造)及鏡面輥,於厚度150 μm、對355 nm之光具有約66%之透光率之聚乙烯膜(熔點:115℃)之單面形成接觸減少層(以下記為"壓紋處理")。
測定所得聚乙烯膜之算術平均粗糙度Ra,其結果如表1所示,分別獲得具有1.2μ
m、2.9μ
m、5.0μ
m、10.3μ
m之接觸減少層之聚乙烯膜。
為提高具有接觸減少層之聚乙烯膜之未形成接觸減少層之側之表面與黏著劑之黏著性,而實施電暈放電處理。其後,塗佈丙烯酸系黏著劑使厚度成為20μ
m,如圖1所示,分別製作於基材膜1之表面形成黏著劑層2、於背面形成接觸減少層3之雷射加工用黏著片材10。
(表面粗糙度之測定)使用Tencor公司製造之階差.表面粗糙度.微細形狀測定裝置P-15,如圖2所示,對所得雷射加工用黏著片材之接觸減少層表面,於雷射加工用黏著片材10之寬度方向(例如寬度E=1400 mm)上取3處(X,Y,Z)、於長度方向上以間隔D(例如10 m)取10處,測定共計30處而獲得平均粗糙度,將該平均粗糙度作為算術平均粗糙度Ra。各處之測定距離係對減少接觸層側表面之長度50 mm進行測定。
(與卡盤台之黏著力之測定)
如圖3所示,使用片材固定環11,於作為雷射切割裝置之卡盤台之石英玻璃製之臺面上,以接觸減少層表面側相接觸之方式,分別配置雷射加工用黏著片材10。
作為加工用雷射,使用波長355 nm、平均輸出功率5 W、重複頻率30 kHz之YAG雷射之三次諧波(355 nm)。藉由fθ透鏡使雷射光聚光,藉由電子掃描儀(galvano scanner)以20 mm/秒之速度掃描雷射加工用黏著片材,進行切割加工。
為更明確地確認各雷射加工用黏著片材與卡盤台之密著性傾向,將掃描次數變為1~8次為止,實施密著性之測定。
雷射加工用黏著片材與卡盤台之密著力之測定係基於JIS Z0237之黏著力測定方法而測定。即,將雷射加工後之雷射加工用黏著片材10切成寬度A為20 mm、長度B為150 mm作為試驗片,使用JIS B7721中規定之拉伸試驗機作為測定裝置,於測定溫度23±3℃、剝離角度180°以及剝離速度300 mm/秒之條件下測定剝離時之荷重(黏著力,N/20 mm)。其結果如表1所示。
不使用具有加工深度之加熱加工用輥,而使用2根鏡面金屬棍,形成150 μm厚之聚乙烯膜,從而形成不具有接觸減少層之聚乙烯膜。
測定膜兩面之算術平均粗糙度Ra,結果如表1所示,各面均為0.4 μm。
除使用聚丙烯/聚乙烯/聚丙烯(膜厚30 μm/90 μm/30 μm,熔點130℃,波長355 nm之透光率為70%)作為基材膜以外,與實施例1同樣地進行壓紋加工,形成接觸減少層,並進行與實施例1同樣之評價。具結果,於反覆多次進行雷射光之掃描之情形時,於雷射加工用黏著片材之切割方面,產生若干切痕,但於雷射加工用黏著片材與卡盤台之附著方面,得到與上述幾乎相同之結果。
如此,由實施例和比較例可知,藉由使用本發明之雷射加工用黏著片材,於雷射加工時,可減少對卡盤台之附著,於雷射加工後,可容易地搬送至其後之步驟(清洗處理或拾取處理)。
本發明可用於半導體晶圓,例如矽晶圓、鍺晶圓、鎵.砷晶圓、電路基板、陶瓷基板、金屬基板、半導體雷射等之發光或受光元件基板、MEMS(Micro Electro Mechanical System)基板及半導體封裝等,對於所有使用雷射光之寬廣範圍之加工均可利用。
1...基材膜
2...黏著劑層
3...接觸減少層
10...雷射加工用黏著片材
11...片材固定環
圖1係本發明之雷射加工用黏著片材之概略剖面圖。
圖2係本發明之雷射加工用黏著片材之概略平面圖。
圖3係用以說明試驗本發明之雷射加工用黏著片材時之樣品之製作方法的片材之概略圖及放大圖。
1...基材膜
2...黏著劑層
3...接觸減少層
10...雷射加工用黏著片材
Claims (8)
- 一種雷射加工用黏著片材,其特徵在於:其係於基材膜之表面積層黏著劑層而成者,且上述基材膜於背面之外表面含有具有凹凸之接觸減少層,該接觸減少層之凹凸之Ra為2.9 μm以上。
- 如請求項1之雷射加工用黏著片材,其中基材膜具有50%以上之透光率。
- 如請求項1之雷射加工用黏著片材,其中基材膜含有至少1層聚烯烴系樹脂。
- 如請求項3之雷射加工用黏著片材,其中聚烯烴系樹脂係選自由聚乙烯、聚丙烯、乙烯共聚物、丙烯共聚物、乙烯-丙烯共聚物所組成群中之1種以上者。
- 如請求項1之雷射加工用黏著片材,其中上述基材膜含有熔點為80℃以上之層。
- 如請求項1之雷射加工用黏著片材,其中上述基材膜進而含有至少斷裂伸長率不同之2層以上之層,且與接觸減少層相鄰配置斷裂伸長率較大之層。
- 如請求項6之雷射加工用黏著片材,其中斷裂伸長率較大之層為100%以上。
- 如請求項1之雷射加工用黏著片材,其中接觸減少層係藉由噴砂、壓紋處理或表面塗佈法而形成者。
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US20030031862A1 (en) * | 2001-06-27 | 2003-02-13 | Shouji Yamamoto | Adhesive sheet for dicing |
US20050191456A1 (en) * | 2004-02-26 | 2005-09-01 | Kouichi Hashimoto | Adhesive sheet roll for wafer processing |
Also Published As
Publication number | Publication date |
---|---|
EP1908808A1 (en) | 2008-04-09 |
CN101157830A (zh) | 2008-04-09 |
KR20080031628A (ko) | 2008-04-10 |
US20080085397A1 (en) | 2008-04-10 |
CN101157830B (zh) | 2013-08-07 |
TW200833807A (en) | 2008-08-16 |
JP2008091765A (ja) | 2008-04-17 |
JP4767144B2 (ja) | 2011-09-07 |
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