TWI407588B - Semiconductor light emitting element and manufacturing method thereof - Google Patents

Semiconductor light emitting element and manufacturing method thereof Download PDF

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Publication number
TWI407588B
TWI407588B TW098108580A TW98108580A TWI407588B TW I407588 B TWI407588 B TW I407588B TW 098108580 A TW098108580 A TW 098108580A TW 98108580 A TW98108580 A TW 98108580A TW I407588 B TWI407588 B TW I407588B
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TW
Taiwan
Prior art keywords
layer
light
electrode layer
emitting device
metal electrode
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TW098108580A
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English (en)
Chinese (zh)
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TW200952219A (en
Inventor
北川良太
淺川鋼兒
藤本明
中西務
堤榮史
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東芝股份有限公司
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Publication of TW200952219A publication Critical patent/TW200952219A/zh
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Publication of TWI407588B publication Critical patent/TWI407588B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
TW098108580A 2008-03-25 2009-03-17 Semiconductor light emitting element and manufacturing method thereof TWI407588B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008077421A JP5651288B2 (ja) 2008-03-25 2008-03-25 半導体発光素子及びその製造方法

Publications (2)

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TW200952219A TW200952219A (en) 2009-12-16
TWI407588B true TWI407588B (zh) 2013-09-01

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TW098108580A TWI407588B (zh) 2008-03-25 2009-03-17 Semiconductor light emitting element and manufacturing method thereof

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US (2) US8101964B2 (https=)
JP (1) JP5651288B2 (https=)
TW (1) TWI407588B (https=)

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JP5283926B2 (ja) * 2008-02-25 2013-09-04 株式会社東芝 光透過型金属電極およびその製造方法
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP2011054598A (ja) * 2009-08-31 2011-03-17 Toshiba Corp 半導体発光素子およびその製造方法
KR101081166B1 (ko) * 2009-09-23 2011-11-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
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KR101103892B1 (ko) * 2009-12-08 2012-01-12 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
KR101104564B1 (ko) 2010-01-08 2012-01-11 고려대학교 산학협력단 발광 다이오드의 광추출 효율을 높이기 위한 광결정 패터닝 방법 및 이에 따른 발광 다이오드
JP5284300B2 (ja) 2010-03-10 2013-09-11 株式会社東芝 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法
JP5036840B2 (ja) * 2010-03-25 2012-09-26 株式会社東芝 発光素子
US20120018770A1 (en) * 2010-07-23 2012-01-26 Min-Hao Michael Lu Oled light source having improved total light emission
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JP5292374B2 (ja) * 2010-09-06 2013-09-18 株式会社東芝 半導体発光素子及びその製造方法
JP5204177B2 (ja) * 2010-09-06 2013-06-05 株式会社東芝 半導体発光素子及びその製造方法
JP2012059969A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体発光素子
JP5674389B2 (ja) * 2010-09-09 2015-02-25 株式会社東芝 半導体発光素子及びその製造方法
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
JP5254381B2 (ja) * 2011-02-23 2013-08-07 株式会社東芝 パターン形成方法
JP5433609B2 (ja) 2011-03-03 2014-03-05 株式会社東芝 半導体発光素子及びその製造方法
JP2012186195A (ja) 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP5479391B2 (ja) 2011-03-08 2014-04-23 株式会社東芝 半導体発光素子及びその製造方法
JP5501319B2 (ja) * 2011-09-24 2014-05-21 株式会社東芝 半導体発光素子
KR102217128B1 (ko) * 2014-06-26 2021-02-18 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
KR101740531B1 (ko) 2012-07-02 2017-06-08 서울바이오시스 주식회사 표면 실장용 발광 다이오드 모듈 및 이의 제조방법.
US9461212B2 (en) 2012-07-02 2016-10-04 Seoul Viosys Co., Ltd. Light emitting diode module for surface mount technology and method of manufacturing the same
KR101972048B1 (ko) * 2012-10-29 2019-08-16 엘지이노텍 주식회사 전극 구조물 및 이를 포함하는 발광소자
KR20140086624A (ko) * 2012-12-28 2014-07-08 삼성전자주식회사 질화물 반도체 발광 소자
JP2013141038A (ja) * 2013-04-22 2013-07-18 Toshiba Corp 半導体発光素子及びその製造方法
US10057983B1 (en) * 2014-06-13 2018-08-21 Verily Life Sciences Llc Fabrication methods for bio-compatible devices using an etch stop and/or a coating
US10879420B2 (en) 2018-07-09 2020-12-29 University Of Iowa Research Foundation Cascaded superlattice LED system
KR102761236B1 (ko) * 2019-06-10 2025-02-05 에스케이하이닉스 주식회사 패턴 형성 방법

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US20060097278A1 (en) * 2002-06-20 2006-05-11 Osamu Goto Gan semiconductor device

Also Published As

Publication number Publication date
JP2009231689A (ja) 2009-10-08
US8450768B2 (en) 2013-05-28
US8101964B2 (en) 2012-01-24
JP5651288B2 (ja) 2015-01-07
TW200952219A (en) 2009-12-16
US20090242925A1 (en) 2009-10-01
US20120091499A1 (en) 2012-04-19

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