TWI407566B - 有效率電晶體結構 - Google Patents
有效率電晶體結構 Download PDFInfo
- Publication number
- TWI407566B TWI407566B TW096116397A TW96116397A TWI407566B TW I407566 B TWI407566 B TW I407566B TW 096116397 A TW096116397 A TW 096116397A TW 96116397 A TW96116397 A TW 96116397A TW I407566 B TWI407566 B TW I407566B
- Authority
- TW
- Taiwan
- Prior art keywords
- source
- region
- drain
- regions
- integrated circuit
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 59
- 230000001788 irregular Effects 0.000 claims description 5
- 230000000116 mitigating effect Effects 0.000 claims 2
- 238000000034 method Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 20
- 239000000872 buffer Substances 0.000 description 16
- 230000001413 cellular effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000001914 filtration Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/10—Phase change RAM [PCRAM, PRAM] devices
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Amplifiers (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79856806P | 2006-05-08 | 2006-05-08 | |
| US82100806P | 2006-08-01 | 2006-08-01 | |
| US82333206P | 2006-08-23 | 2006-08-23 | |
| US82435706P | 2006-09-01 | 2006-09-01 | |
| US82551706P | 2006-09-13 | 2006-09-13 | |
| US11/524,113 US7851872B2 (en) | 2003-10-22 | 2006-09-20 | Efficient transistor structure |
| US11/586,471 US7652338B2 (en) | 2003-10-22 | 2006-10-25 | Efficient transistor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802869A TW200802869A (en) | 2008-01-01 |
| TWI407566B true TWI407566B (zh) | 2013-09-01 |
Family
ID=38723776
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096116397A TWI407566B (zh) | 2006-05-08 | 2007-05-08 | 有效率電晶體結構 |
| TW096116398A TWI429078B (zh) | 2006-05-08 | 2007-05-08 | 有效率電晶體結構 |
| TW096116400A TWI420665B (zh) | 2006-05-08 | 2007-05-08 | 有效率電晶體結構 |
| TW096116401A TW200805663A (en) | 2006-05-08 | 2007-05-08 | Efficient transistor structure |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096116398A TWI429078B (zh) | 2006-05-08 | 2007-05-08 | 有效率電晶體結構 |
| TW096116400A TWI420665B (zh) | 2006-05-08 | 2007-05-08 | 有效率電晶體結構 |
| TW096116401A TW200805663A (en) | 2006-05-08 | 2007-05-08 | Efficient transistor structure |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2030237B1 (https=) |
| JP (1) | JP5137947B2 (https=) |
| KR (1) | KR101373792B1 (https=) |
| CN (1) | CN101490843B (https=) |
| TW (4) | TWI407566B (https=) |
| WO (1) | WO2007136556A2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5360829B2 (ja) * | 2006-12-28 | 2013-12-04 | マーベル ワールド トレード リミテッド | 低オン抵抗のｍｏｓデバイス配置 |
| CN102623496B (zh) * | 2011-01-27 | 2014-11-05 | 无锡华润上华半导体有限公司 | 矩阵型mos场效应晶体管 |
| JP5586546B2 (ja) * | 2011-03-23 | 2014-09-10 | 株式会社東芝 | 半導体装置 |
| US11195794B2 (en) * | 2020-02-05 | 2021-12-07 | Samsung Electronics Co., Ltd. | Stacked integrated circuit devices including a routing wire |
| CN111599862A (zh) * | 2020-05-21 | 2020-08-28 | Oppo广东移动通信有限公司 | 晶体管以及集成电路 |
| DE112021003691T5 (de) * | 2020-07-10 | 2023-04-20 | Sony Group Corporation | Ansteuerungsschaltkreisarraysubstrat, anzeigevorrichtung und elektronische einrichtung |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010045670A1 (en) * | 2000-05-29 | 2001-11-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| TW471089B (en) * | 1999-12-07 | 2002-01-01 | Infineon Technologies Ag | Production of integrated circuit |
| US20020179945A1 (en) * | 2001-06-04 | 2002-12-05 | Kozo Sakamoto | Power semiconductor device |
| US7019362B2 (en) * | 2003-02-27 | 2006-03-28 | Renesas Technology, Corp. | Power MOSFET with reduced dgate resistance |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4409499A (en) * | 1982-06-14 | 1983-10-11 | Standard Microsystems Corporation | High-speed merged plane logic function array |
| JPS6076160A (ja) * | 1983-10-03 | 1985-04-30 | Seiko Epson Corp | 半導体集積回路 |
| JPH01207976A (ja) * | 1988-02-15 | 1989-08-21 | Nec Corp | 半導体装置 |
| CA2046554A1 (en) * | 1990-07-10 | 1992-01-11 | Masahiro Kugishima | Basic cell and arrangement structure thereof |
| JPH07161984A (ja) * | 1993-12-06 | 1995-06-23 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| JPH07283377A (ja) * | 1994-01-03 | 1995-10-27 | Texas Instr Inc <Ti> | 小型ゲートアレイおよびその製造方法 |
| JP2611687B2 (ja) * | 1995-06-26 | 1997-05-21 | セイコーエプソン株式会社 | 半導体装置 |
| US5838050A (en) * | 1996-06-19 | 1998-11-17 | Winbond Electronics Corp. | Hexagon CMOS device |
| US6236258B1 (en) * | 1998-08-25 | 2001-05-22 | International Business Machines Corporation | Wordline driver circuit using ring-shaped devices |
| JP2000208759A (ja) * | 1999-01-12 | 2000-07-28 | Rohm Co Ltd | 半導体装置 |
| TW447129B (en) * | 2000-06-30 | 2001-07-21 | United Microelectronics Corp | Array type SOI transistor layout |
| US6566710B1 (en) * | 2001-08-29 | 2003-05-20 | National Semiconductor Corporation | Power MOSFET cell with a crossed bar shaped body contact area |
| US6724044B2 (en) * | 2002-05-10 | 2004-04-20 | General Semiconductor, Inc. | MOSFET device having geometry that permits frequent body contact |
| JP5179692B2 (ja) * | 2002-08-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 半導体記憶装置及びその製造方法 |
| US7079829B2 (en) * | 2002-11-15 | 2006-07-18 | Matsushita Electric Industrial Co, Ltd. | Semiconductor differential circuit, oscillation apparatus, switching apparatus, amplifying apparatus, mixer apparatus and circuit apparatus using same, and semiconductor differential circuit placement method |
| KR100485174B1 (ko) | 2002-12-24 | 2005-04-22 | 동부아남반도체 주식회사 | 모스 트랜지스터 제조 방법 |
| US7091565B2 (en) * | 2003-10-22 | 2006-08-15 | Marvell World Trade Ltd. | Efficient transistor structure |
| TWI241720B (en) * | 2004-01-16 | 2005-10-11 | Super Nova Optoelectronics Cor | Replaceable light emitting diode packaging structure |
| JP2005311131A (ja) * | 2004-04-22 | 2005-11-04 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JP2007258314A (ja) * | 2006-03-22 | 2007-10-04 | Seiko Npc Corp | 半導体装置の製造方法及び半導体装置 |
-
2007
- 2007-05-08 TW TW096116397A patent/TWI407566B/zh not_active IP Right Cessation
- 2007-05-08 EP EP07809055A patent/EP2030237B1/en not_active Ceased
- 2007-05-08 WO PCT/US2007/011207 patent/WO2007136556A2/en not_active Ceased
- 2007-05-08 KR KR1020087029444A patent/KR101373792B1/ko not_active Expired - Fee Related
- 2007-05-08 TW TW096116398A patent/TWI429078B/zh not_active IP Right Cessation
- 2007-05-08 TW TW096116400A patent/TWI420665B/zh not_active IP Right Cessation
- 2007-05-08 CN CN2007800259194A patent/CN101490843B/zh not_active Expired - Fee Related
- 2007-05-08 TW TW096116401A patent/TW200805663A/zh unknown
- 2007-05-08 JP JP2009509836A patent/JP5137947B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW471089B (en) * | 1999-12-07 | 2002-01-01 | Infineon Technologies Ag | Production of integrated circuit |
| US20010045670A1 (en) * | 2000-05-29 | 2001-11-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
| US20020179945A1 (en) * | 2001-06-04 | 2002-12-05 | Kozo Sakamoto | Power semiconductor device |
| US7019362B2 (en) * | 2003-02-27 | 2006-03-28 | Renesas Technology, Corp. | Power MOSFET with reduced dgate resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200802870A (en) | 2008-01-01 |
| KR20090013219A (ko) | 2009-02-04 |
| CN101490843A (zh) | 2009-07-22 |
| WO2007136556A2 (en) | 2007-11-29 |
| TW200802869A (en) | 2008-01-01 |
| JP5137947B2 (ja) | 2013-02-06 |
| TWI429078B (zh) | 2014-03-01 |
| WO2007136556A3 (en) | 2008-07-03 |
| TW200805662A (en) | 2008-01-16 |
| TWI420665B (zh) | 2013-12-21 |
| CN101490843B (zh) | 2011-01-26 |
| WO2007136556B1 (en) | 2008-08-28 |
| EP2030237A2 (en) | 2009-03-04 |
| TW200805663A (en) | 2008-01-16 |
| EP2030237B1 (en) | 2011-02-09 |
| JP2009536789A (ja) | 2009-10-15 |
| KR101373792B1 (ko) | 2014-03-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |