TWI405608B - 表面處理方法以及被表面處理的物品 - Google Patents
表面處理方法以及被表面處理的物品 Download PDFInfo
- Publication number
- TWI405608B TWI405608B TW095110248A TW95110248A TWI405608B TW I405608 B TWI405608 B TW I405608B TW 095110248 A TW095110248 A TW 095110248A TW 95110248 A TW95110248 A TW 95110248A TW I405608 B TWI405608 B TW I405608B
- Authority
- TW
- Taiwan
- Prior art keywords
- water
- plasma
- article
- contact
- contact angle
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D65/00—Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
- B01D65/02—Membrane cleaning or sterilisation ; Membrane regeneration
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62D—CHEMICAL MEANS FOR EXTINGUISHING FIRES OR FOR COMBATING OR PROTECTING AGAINST HARMFUL CHEMICAL AGENTS; CHEMICAL MATERIALS FOR USE IN BREATHING APPARATUS
- A62D3/00—Processes for making harmful chemical substances harmless or less harmful, by effecting a chemical change in the substances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
- H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
- A61L2/00—Disinfection or sterilisation of materials or objects, in general; Accessories therefor
- A61L2/02—Disinfection or sterilisation of materials or objects, in general; Accessories therefor using physical processes
- A61L2/14—Plasma, i.e. ionised gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2321/00—Details relating to membrane cleaning, regeneration, sterilization or to the prevention of fouling
- B01D2321/20—By influencing the flow
- B01D2321/2066—Pulsated flow
- B01D2321/2075—Ultrasonic treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Materials Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Surface Treatment Of Glass (AREA)
- Weting (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Fuel Cell (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- ing And Chemical Polishing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005089631 | 2005-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200637648A TW200637648A (en) | 2006-11-01 |
| TWI405608B true TWI405608B (zh) | 2013-08-21 |
Family
ID=37053300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095110248A TWI405608B (zh) | 2005-03-25 | 2006-03-24 | 表面處理方法以及被表面處理的物品 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080210664A1 (https=) |
| JP (2) | JP5518281B2 (https=) |
| KR (1) | KR100938323B1 (https=) |
| TW (1) | TWI405608B (https=) |
| WO (1) | WO2006104043A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101825149B1 (ko) * | 2010-03-03 | 2018-02-02 | 조지아 테크 리서치 코포레이션 | 무기 인터포저상의 패키지-관통-비아(tpv) 구조 및 그의 제조방법 |
| US10369327B2 (en) * | 2010-04-28 | 2019-08-06 | Clph, Llc | Catheters with lubricious linings and methods for making and using them |
| JP5696447B2 (ja) | 2010-11-25 | 2015-04-08 | Jfeスチール株式会社 | 表面処理金属材料の製造方法 |
| JP5645163B2 (ja) * | 2011-01-26 | 2014-12-24 | 国立大学法人大阪大学 | フッ素系樹脂材料の表面改質方法及びフッ素系樹脂材料と金属材料の積層体 |
| KR101405721B1 (ko) * | 2011-04-29 | 2014-06-13 | 한국과학기술연구원 | 소수성이 개선된 기공체 및 그 제조 방법 |
| KR101349075B1 (ko) * | 2011-10-10 | 2014-01-16 | 한국과학기술연구원 | 물질전달성이 향상된 연료전지 및 그 제조 방법 |
| US9809493B2 (en) * | 2015-04-27 | 2017-11-07 | Ford Global Technologies, Llc | Surface treatment of glass bubbles |
| JP2019029333A (ja) * | 2017-07-26 | 2019-02-21 | 東芝メモリ株式会社 | プラズマ処理装置および半導体装置の製造方法 |
| KR102148831B1 (ko) | 2018-10-02 | 2020-08-27 | 삼성전기주식회사 | 코일 부품 |
| KR102619877B1 (ko) * | 2019-09-11 | 2024-01-03 | 삼성전자주식회사 | 기판 처리 장치 |
| JP7427475B2 (ja) * | 2020-02-28 | 2024-02-05 | 株式会社Screenホールディングス | 基板処理方法 |
| JP7399209B2 (ja) * | 2022-04-05 | 2023-12-15 | エルジー・ケム・リミテッド | 処理装置、分解生成物の製造方法、及び処理方法 |
| CN121889201A (zh) * | 2023-09-29 | 2026-04-17 | 大金工业株式会社 | 空气过滤器滤材、空气过滤器滤材的使用方法以及空气处理装置 |
| CN118952032B (zh) * | 2024-09-20 | 2025-05-30 | 彤程电子材料(常州)有限公司 | 一种复合抛光垫及其制备方法和应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6106653A (en) * | 1998-03-31 | 2000-08-22 | Exxon Research And Engineering Co. | Water vapor plasma treatment of glass surfaces |
| US20010010228A1 (en) * | 1998-03-16 | 2001-08-02 | Vlsi Technology, Inc. | Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62110716A (ja) * | 1985-11-06 | 1987-05-21 | Power Reactor & Nuclear Fuel Dev Corp | 液中プラズマ加熱による物性変換方法 |
| DE3827630A1 (de) * | 1988-08-16 | 1990-02-22 | Hoechst Ag | Flaechengebilde aus einem substrat und einem ueberzug und verfahren zu seiner herstellung |
| JPH03231199A (ja) * | 1990-02-06 | 1991-10-15 | Mitsubishi Heavy Ind Ltd | 使用ずみ燃料剪断片の減容方法 |
| JP3837783B2 (ja) * | 1996-08-12 | 2006-10-25 | 森 勇蔵 | 超純水中の水酸基による加工方法 |
| EP0867924B1 (en) * | 1997-02-14 | 2011-08-31 | Imec | Method for removing organic contaminants from a semiconductor surface |
| JPH11345797A (ja) * | 1998-06-02 | 1999-12-14 | Shimada Phys & Chem Ind Co Ltd | 2流体噴出ノズル及びこれを使用した2流体噴流洗浄装置並びに2流体噴流洗浄方法 |
| JP3224777B2 (ja) * | 1998-06-09 | 2001-11-05 | 三菱重工業株式会社 | 原子炉構造物自動解体装置 |
| JP2001058184A (ja) * | 1999-08-24 | 2001-03-06 | Mitsubishi Heavy Ind Ltd | 有害物処理方法および有害物処理装置 |
| JP2002313358A (ja) * | 2001-04-10 | 2002-10-25 | Aisin Seiki Co Ltd | 膜・電極接合体の製造方法および固体高分子電解質型燃料電池 |
| US6593161B2 (en) * | 2001-12-12 | 2003-07-15 | Sharp Laboratories Of America, Inc. | System and method for cleaning ozone oxidation |
| WO2003086615A1 (en) * | 2002-04-01 | 2003-10-23 | Techno Network Shikoku Co., Ltd. | Submerged plasma generator, method of generating plasma in liquid and method of decomposing toxic substance with plasma in liquid |
| JP3624239B2 (ja) * | 2002-10-29 | 2005-03-02 | 株式会社テクノネットワーク四国 | 液中プラズマ発生装置、薄膜形成方法およびシリコンカーバイト膜 |
| AUPS220302A0 (en) * | 2002-05-08 | 2002-06-06 | Chang, Chak Man Thomas | A plasma formed within bubbles in an aqueous medium and uses therefore |
| ITMI20021985A1 (it) * | 2002-09-18 | 2004-03-19 | St Microelectronics Srl | Metodo per la fabbricazione di dispositivi elettronici a semiconduttore |
| JP4111858B2 (ja) * | 2003-03-06 | 2008-07-02 | 正之 佐藤 | 水中放電プラズマ方法及び液体処理装置 |
| JP2004306029A (ja) * | 2003-03-27 | 2004-11-04 | Techno Network Shikoku Co Ltd | 化学反応装置および有害物質分解方法 |
| CN100442449C (zh) * | 2003-05-02 | 2008-12-10 | Ekc技术公司 | 半导体工艺中后蚀刻残留物的去除 |
| JP2005058887A (ja) * | 2003-08-11 | 2005-03-10 | Mitsubishi Heavy Ind Ltd | 高電圧パルスを利用した廃水処理装置 |
| JP4452775B2 (ja) * | 2003-09-30 | 2010-04-21 | 国立大学法人愛媛大学 | 機能化繊維の製造方法 |
| US7019288B2 (en) * | 2003-09-30 | 2006-03-28 | Sequenom, Inc. | Methods of making substrates for mass spectrometry analysis and related devices |
| JP4370378B2 (ja) * | 2004-02-23 | 2009-11-25 | 国立大学法人愛媛大学 | 多孔質膜およびその生成装置と生成方法 |
| US7323080B2 (en) * | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
| US8653404B2 (en) * | 2004-12-03 | 2014-02-18 | Kabushiki Kaisha Toyota Jidoshokki | In-liquid plasma electrode, in-liquid plasma generating apparatus and in-liquid plasma generating method |
| JP2006253495A (ja) * | 2005-03-11 | 2006-09-21 | Sumitomo Heavy Ind Ltd | 表面洗浄装置及び洗浄方法 |
-
2006
- 2006-03-24 JP JP2006519696A patent/JP5518281B2/ja not_active Expired - Fee Related
- 2006-03-24 TW TW095110248A patent/TWI405608B/zh not_active IP Right Cessation
- 2006-03-24 KR KR1020077024163A patent/KR100938323B1/ko not_active Expired - Fee Related
- 2006-03-24 WO PCT/JP2006/305982 patent/WO2006104043A1/ja not_active Ceased
- 2006-03-24 US US11/909,658 patent/US20080210664A1/en not_active Abandoned
-
2012
- 2012-08-27 JP JP2012187000A patent/JP5725304B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010010228A1 (en) * | 1998-03-16 | 2001-08-02 | Vlsi Technology, Inc. | Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber |
| US6106653A (en) * | 1998-03-31 | 2000-08-22 | Exxon Research And Engineering Co. | Water vapor plasma treatment of glass surfaces |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5518281B2 (ja) | 2014-06-11 |
| TW200637648A (en) | 2006-11-01 |
| WO2006104043A1 (ja) | 2006-10-05 |
| KR100938323B1 (ko) | 2010-01-22 |
| KR20070113313A (ko) | 2007-11-28 |
| JPWO2006104043A1 (ja) | 2008-09-04 |
| US20080210664A1 (en) | 2008-09-04 |
| JP5725304B2 (ja) | 2015-05-27 |
| JP2013031842A (ja) | 2013-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5725304B2 (ja) | 表面処理方法 | |
| Lai et al. | Transparent superhydrophobic/superhydrophilic TiO 2-based coatings for self-cleaning and anti-fogging | |
| EP1079003B1 (en) | Electrolytic machining method and apparatus | |
| Yong et al. | Photoinduced switchable underwater superoleophobicity–superoleophilicity on laser modified titanium surfaces | |
| Misra et al. | Effect of laser parameters on laser-induced graphene filter fabrication and its performance for desalination and water purification | |
| WO1998008248A1 (en) | Method and device for washing electronic parts member, or the like | |
| TW200829720A (en) | Corrosion-resisting member and method for making the same | |
| Saxena et al. | Organization of SiO2 and TiO2 nanoparticles into fractal patterns on glass surface for the generation of superhydrophilicity | |
| TWI607043B (zh) | 親水性ptfe膜 | |
| KR102120642B1 (ko) | 해수 담수화용 3차원 다공성 멤브레인, 그의 제조방법, 그를 포함하는 해수 담수화 장치 및 그것을 이용한 해수 담수화 방법 | |
| Dikici et al. | A comparative study on the photocatalytic activities of microporous and nanoporous TiO2 layers prepared by electrochemical anodization | |
| JPWO1999049997A1 (ja) | 半導体製造装置用のフッ素ゴム系成形品の洗浄方法および洗浄された成形品 | |
| JPWO2016056466A1 (ja) | 抗菌積層構造体及びその製造方法 | |
| CN108356409A (zh) | 一种水中气泡调谐用钛片及其加工方法和使用方法 | |
| CN101305111B (zh) | 用于施设多孔的玻璃层的方法 | |
| CN101225510A (zh) | 超疏水性和超亲水性二氧化钛薄膜的等离子体制备方法 | |
| KR101466914B1 (ko) | 이산화티탄 나노튜브 광촉매의 제조방법 및 이를 이용한 수처리 장치 | |
| US5439596A (en) | Method of producing pure water, system therefor and cleaning method therefor | |
| US9797046B2 (en) | Method for etching metal or metal oxide by ozone water, method for smoothing surface of metal or metal oxide by ozone water, and patterning method using ozone water | |
| JP7012951B2 (ja) | 浄化装置、浄化方法、炭素材の製造方法および炭素材 | |
| KR101225128B1 (ko) | 폴리테트라플루오로에틸렌 박막의 형성 방법 | |
| Arnould et al. | Electrodeposition from ionic liquid of 2D ordered Ta2O5 on titanium substrate through a polystyrene template | |
| Fukami et al. | Ablation of silicone rubber using UV-nanosecond and IR-femtosecond lasers | |
| WO2018236785A1 (en) | Method of forming high surface area metal oxide nanostructures and applications of same | |
| KR100646421B1 (ko) | 고분자막의 표면개질방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |