TWI404199B - 成像器晶粒封裝及暫時載體上封裝一成像器晶粒之方法 - Google Patents

成像器晶粒封裝及暫時載體上封裝一成像器晶粒之方法 Download PDF

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TWI404199B
TWI404199B TW097134263A TW97134263A TWI404199B TW I404199 B TWI404199 B TW I404199B TW 097134263 A TW097134263 A TW 097134263A TW 97134263 A TW97134263 A TW 97134263A TW I404199 B TWI404199 B TW I404199B
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die
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Steven Oliver
Warren M Farnworth
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Micron Technology Inc
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Description

成像器晶粒封裝及暫時載體上封裝一成像器晶粒之方法
本發明之實施例大體而言係關於光學互動式微電子裝置之封裝。更具體言之，本發明之實施例係關於一密封於一囊封材料中之成像器晶粒封裝及封裝一成像器晶粒之方法。
本申請案主張於2007年9月7日提出申請之題為"成像器晶粒封裝及暫時載體上封裝一成像器晶粒之方法(Imager Die Package and Methods of Packaging an Imager Die on a Temporary Carrier)"之美國專利申請案第11/851,787號之申請日的權益。
微電子成像器已為熟習電子/光子技術者所熟知，其用於數位相機、具有圖片性能之無線電裝置及許多其他應用中。舉例而言，行動電話及個人數位助理(PDA)皆併入有微電子成像器以獲取及發送圖片。微電子成像器之增長率在穩步增加的同時變得更小且產生出具有更高像素計數之更佳影像。
微電子成像器包括使用電荷耦合裝置(CCD)系統、互補金氧半導體(CMOS)系統或其他固態系統之影像感應器。CCD影像感應器已廣泛用於數位相機與其他應用中。CMOS影像感應器由於具有低生產成本、高產率及小尺寸而快速極度風行。CMOS影像感應器以及CCD影像感應器因此經"封裝"以保護其精密組件並提供外部電接點。光學 互動式微電子裝置需要可提供對於其他環境條件之保護同時允許光或其他形式之輻射通過並到達感應電路所在之表面的封裝。微電子裝置之習知封裝技術之一問題在於所生產的最終封裝允許影像感應器曝露至大量不必要之周邊光線下。
此外，習知半導體封裝技術所涉及之材料及結構需要可能耗時之製造過程且需要若干精密的組合步驟。每一組合步驟皆增加該成像裝置本身遭污染或損壞之機會，因此升高了缺陷程度及為了避免遭此損壞及污染而延緩了生產時間。另外，若該封裝設計或製造方法必需封裝所有位於一晶圓上之成像器晶粒而不管是否存在顯著量之晶粒有缺陷，則會造成材料之實質浪費。歸因於半導體產業之極端成本競爭性，生產率及生產時間之改良係有價值的，尤其是在根據生產大體積組件加以考慮之情況下。
存在既改良一成像裝置之品質同時亦降低其成本之方法的需要。特定而言，存在提供一使得能以低成本、大體積方式來囊封成像器晶粒同時提供一高品質成像裝置之方法的需要。
本發明之實施例包括封裝成像器晶粒之方法及成像器晶粒封裝。成像器晶粒封裝方法可在一囊封過程中利用一暫時載體。在一特定實施例中，該載體可包括一高溫相容薄膜框帶及一紫外線可釋放黏著劑。
本發明之一實施例包括一封裝一成像器晶粒之方法。該 方法包括在一製造基板所承載之相鄰成像器晶粒之間進行切割至穿過該製造基板的厚度以形成複數個個別成像器晶粒。該方法進一步包括將自該複數個個別成像器晶粒特徵化之複數個良品晶粒固定至一暫時載體上且至少部分地囊封該暫時載體上之該複數個良品晶粒以重構一晶圓。該方法亦包括自晶圓單一化該至少部分囊封之複數個良品晶粒。在一特定實施例中，一暫時載體包括在一由一經組態以經受相對較高的處理溫度(例如，約90℃之溫度或更高)之材料形成之薄膜的表面上的紫外線敏感黏著劑。
本發明之另一實施例包括一成像器晶粒封裝，該封裝包含一具有一活性表面及一背面之基板，具有影像感應器之成像器晶粒形成於該活性表面上。該封裝進一步包括至少一自該製造基板之該活性表面延伸至該製造基板之該背面的傳導互連。此外，該封裝可包含經形成為至少部分包圍包括該成像器晶粒之製造基板的囊封材料。
根據又一另一實施例，本發明包括一電子系統，該電子系統包含根據本發明之一實施例之可操作地耦接至一成像器晶粒封裝的基於處理器之裝置。
本發明之另一實施例包括一包含複數個良品成像器晶粒之良品晶粒晶圓。每一良品晶粒皆製造於複數個製造基板中之一製造基板的一活性表面上，且每一製造基板之一背面上包括電路迹線。該良品晶粒晶圓進一步包括各自形成於該等電路迹線上之第一複數個離散傳導元件及至少部分形成於該複數個良品成像器晶粒中之每一良品晶粒周圍之 囊封材料。
大體上參看隨附之圖式來說明本發明之各態樣以展示封裝一成像器晶粒之結構與方法。以相同數字表示所說明之實施例之共同元件。應瞭解所呈現之諸圖並非意欲說明實際裝置結構之任一特定部分之實際視圖，而僅為用於更清楚及更全面地描述本發明之示意性表示。在影像感應器之上下文中進行描繪及描述之同時應進一步瞭解，本文提供之封裝實施例及方法將極佳地圍封其他類型之光學互動式裝置，諸如(但不限於)，CCD與CMOS影像感應器、電子可擦可程式化唯讀記憶體(EPROM)，及光電二極體，以及發光裝置，包括半導體雷射與發光二極體。
根據本發明之一實施例之一成像器晶粒封裝的製造係由圖1－圖8加以說明。參看圖1，其說明一處於初步處理階段之半導體晶圓110。該晶圓構造經再分成複數個晶粒區域218，該等區域彼此分離並由街道142限制。該等晶粒區域218中之每一者習知以相同方式處理以形成複數個相同晶粒。每一晶粒區域218包括一活性表面111，該活性表面111具有一影像感應區域112，其包含對光線或其他形式之輻射有反應之感應電路。
圖2說明沿圖1之線2所截取之貫穿晶圓互連(TWI)晶圓216的橫截面圖。本文可使用術語"貫穿晶圓互連"來描述一基板，該基板具有延伸穿過該基板且襯墊有或填充有用於形成互連之傳導材料的通道，該等互連用於將該基板之 一部分之一側上的電路連接至其另一側上之電路或連接至外部電路。TWI晶圓216包括一第一表面210與一第二表面212。TWI晶圓216可包含一製造基板232，該製造基板232具有形成於其一活性表面上之複數個晶粒區域218，且每一晶粒區域218可包含成像器晶粒226。成像器晶粒226可各包含一影像感應器225，諸如(但不限於)CMOS成像器。僅藉由實例說明之，製造基板232可包含完全或部分的半導電材料(例如矽、砷化鎵、磷化銦等)晶圓、絕緣物上矽(SOI)類型基板(例如，陶瓷上矽(SOC)、玻璃上矽(SOG)、藍寶石上矽(SOS)等)，或其上可製造複數個半導體裝置組件之任何其他塊體或大型基板。
TWI晶圓216可包括固定於製造基板232上且包含(例如)一光聚合材料之複數個間隙器242。間隙器242可經組態以提供成像器晶粒226與一隨後附著層(諸如防護玻璃罩或透鏡)之間的間距。TWI晶圓216亦可包含至少一位於相鄰晶粒之間且自製造基板232之活性表面234延伸至背面235並與一再分配層(RDL)接觸的傳導互連236。RDL可呈形成於TWI晶圓216之第二表面212上之傳導迹線238之形式。另外，TWI晶圓216可包含習知形成於或安置於傳導迹線238上且各自接觸傳導迹線238的第一複數個離散傳導元件240。僅舉例而言(且並非限制)，第一複數個離散傳導元件240可包含焊球或凸塊、螺栓、由傳導材料形成或覆蓋或由一導體填充材料形成之柱體或圓柱。上述描述僅表示一TWI晶圓之一實例且此項技術中已知之任何其他組態皆在 本發明之範圍內。
圖3(a)說明具有玻璃層310或所附著之另一適合透明材料之薄層的TWI晶圓216之一實施例。玻璃層310可具有一足夠覆蓋成像器晶粒活性表面111(見圖1)之陣列的尺寸，且該玻璃層310藉由複數個間隙器242附著至每一晶粒區域218且在周邊關於每一晶粒區域218被支撐。玻璃層310可由一至少部分光學透明材料(諸如，硼矽玻璃(BSG))形成。亦可使用允許所需範圍波長之光線或其他形式之電磁輻射通過的其他類型之玻璃。玻璃層310可包含凹口形式之切口312，該等切口312可形成於將玻璃層310附著於TWI晶圓216之前或之後。如以下更詳細之描述，切口312經組態以最小化影像感應器225所接收之周邊光線，且因此增加影像感應器225之品質。切口312可藉由一鋸刀(未圖示)形成，其中切口312之槽深可取決於該鋸刀之尺寸及該鋸刀刺入玻璃層310之深度。另外，切口312在玻璃層310中形成之角度可部分取決於該鋸刀之形狀。切口312之形狀不限於所描繪之具有角度或傾斜邊緣之切口，切口312亦可具有一如圖3(b)所說明大體上呈正方形或矩形之形狀。在切口312形成於將玻璃層310附著於晶圓110之後的情形下，間隙器242可經組態以經受由該鋸刀施加之一些壓縮力。
在其他實施例中，如圖3(c)所示，代替玻璃層310，由玻璃或承載複數個透鏡311'或其他光學元件之另一適合透明材料形成之基板310'可位於TWI晶圓216上。每一透鏡311' 在晶粒區域218之一影像感應器225上對準。在透鏡311'自玻璃基板310'之一外部表面突出之實施例中，額外間隙器242'可形成或定位於每一透鏡311'周圍以促進根據本發明之教示進一步處理(例如，防止囊封材料接觸每一透鏡311')。
在將玻璃層310(或承載玻璃基板310'之透鏡311')附著至複數個間隙器242之後，玻璃層310、間隙器242及製造基板232可藉由經執行以形成複數個個別成像器晶粒區域218之切割操作而切開(見圖4)。在一些實施例中，可使用類樹脂片鋸來完成對玻璃層310之切開。在一更特定的實施例中，可用一鍍金剛石鎳鋸來完成對製造基板232之切開。在本發明之另一實施例中，可藉由"隱形"切割製程切開製造基板232、間隙器242及玻璃層310，其中製造基板232、間隙器242及玻璃層310藉由一或多個雷射在內部區域被削弱且隨後該玻璃層310、間隙器242及製造基板232經拉伸及在被削弱之內部區域斷裂。該隱形切割製程由Hamamatsu Photonics K.K.,(Shizuoka，日本)開發。一替代切割製程可藉由使用可獲自Synova S.A.,(Lausanne,Switzerland)之噴水引導雷射而實現。在其他實施例中，成像器單一化製程可藉由一噴射單一化系統來完成，其中使用研磨漿之噴射流以單一化組件零件。該噴射單一化系統可由Towa Intercon Technology,Inc.(Morgan Hill,California)製成。在切割操作完成之前或之後，可測試個別成像器晶粒以確定成像器晶粒中之哪些可操作且滿足定性效能標準且 且因此被認為是"好的"，及確定哪些是有缺陷的。可將好的成像器晶粒看作"良品晶粒"(KGD)。一旦測定KGD，便可將KGD置於一暫時載體410上(見圖5)。
圖5說明位於一暫時載體410上之KGD 510。根據一些實施例，暫時載體410包含一薄膜框帶或一玻璃載體。載體410可包含一可經受相對較高之製程溫度(例如，超過約90℃之溫度)的高溫相容聚對苯二甲酸乙二酯(PET)材料。另外，暫時載體410可包含一壓力敏感黏著劑。此外，暫時載體410可包含一在以選擇波長之光線(通常為紫外線光)照射時可損失黏著強度的紫外線敏感黏著劑。使用一紫外線類型之框帶可為所要的，此係因為在受照射時其可損失黏著性且因此在隨後之抓放執行過程中降低對晶粒之應力。紫外線敏感框帶可購自日本的Furukawa Electric Company,Ltd。
如所示，KGD 510正面朝下置於暫時載體410上，且因此圖5經展示為相對於圖2－圖4反轉。KGD 510可定位於一暫時載體410上以提供一所要間隙寬度450，且其後，KGD 510可經囊封材料512囊封以形成晶圓610。囊封材料512可包含展現低吸水性及良好空間穩定性之已知用於囊封半導體晶片之任何習知化合物。囊封材料512亦可經選擇而具有一與基板232及KGD 510之熱膨脹係數相容之熱膨脹係數(CTE)。僅舉例而言(且並非限制)，KGD 510之囊封可藉由一成形方法或一障壁及填充方法來實現。此項技術中已知之成形方法包括射出成形、轉注成形及壓縮成形。射出成 形為其中將一囊封材料在高壓下射入一含有待囊封之裝置的模具空穴內之方法。一壓縮成形方法可包括將一囊封材料置於一含有待囊封之裝置的一模具空穴內且其後施加壓力與熱。轉注成形與壓縮成形不同之處為並非施加壓力於預先置放之化合物，而是將囊封材料預先加熱且隨後在壓力下將其轉注於一含有待囊封之裝置的模具空穴內。障壁及填充為兩步驟方法，其中將一障壁圍繞一裝置分配於一空穴內，且其後藉由一囊封材料填充該空穴以囊封該裝置。經涵蓋以在本發明中使用的囊封材料512之實例包括(但不限於)熱固性及熱塑性固化化合物，諸如填矽聚合物或液晶聚合物。
在使用成形方法之實施例中，一模具空穴之一表面可經組態以收納自每一KGD 510突出之離散傳導元件240之部分以防止囊封材料完全覆蓋離散傳導元件240。在此實施例中，如圖5(a)中所示，離散傳導元件240可部分由一可壓縮適型元件552(例如，聚四氟乙烯薄膜，諸如由E.I.duPont Nemours & Co.of Wilmington,Delaware以商標TEFLON銷售之材料)收納，該元件552襯墊模具空穴550之一表面的至少一部分。一旦受限於模具空穴550內，在模具空穴550內自每一KGD 510突出之離散傳導元件240之部分由可壓縮適型元件552收納，從而當將囊封材料512引入至模具空穴550中時將離散傳導元件240之經收納部分與囊封材料512屏蔽開。因此在該成形方法完成及自模具空穴550移除所得晶圓610之後，離散傳導元件240之部分可 自囊封材料512之一外部表面突出。離散傳導元件240自該囊封材料之外部表面突出之距離可藉由離散傳導元件240被收納之深度來界定，且因此在使用可壓縮適型元件552之實施例中，可由可壓縮適型元件552之厚度來界定。
在模具空穴未經組態以收納離散傳導元件240之實施例中，以及在使用障壁及填充方法或其他囊封方法之實施例中，可能需要將傳導元件240穿過囊封材料512曝露。在此實施例中，晶圓610可經受適當處理以形成一延伸穿過第一複數個離散傳導元件240及囊封材料512之大體上平坦的表面612。該處理可進一步提供對第一複數個離散傳導元件240之至少部分曝露。該大體上平坦之表面612的形成可用任何適合方法完成，且可藉由背面研磨或另一機械平坦化製程(諸如化學機械平坦化(CMP))來完成。可需要適當控制平坦化製程以防止弄髒第一複數個離散傳導元件240之任何傳導材料，此可導致一傳導元件240與其相鄰傳導元件之短路。在平坦化表面612之後，第二複數個離散傳導元件620(例如焊球、釘、柱體、圓柱等)可形成於或安置於第一複數個離散傳導元件240上且結合至第一複數個離散傳導元件240。該第二複數個離散傳導元件620可提供對一載體基板或其他較高層次電路總成之隨後附著，如圖6所示。
圖6亦描繪從暫時載體410移除晶圓610。在晶圓610與暫時載體410分離之後可需要清潔晶圓610之黏著劑。可實施此項技術中已知之清潔方法，諸如電漿清潔技術。
如圖7所示，晶圓610可置放於一切割帶710上且藉由執行貫穿囊封材料512之切割操作將其單一化，且因此生成一最終經封裝之晶粒810/810"，如圖8(a)及8(b)所示。最終經封裝之晶粒810/810"提供由於切口312(見圖3(a)及3(b))造成的區域822，該區域822在最終經封裝之晶粒810/810"之活性表面的非成像區域上橫向延伸。該等囊封材料或封裝材料之橫向延伸區域822防止至少一些不必要的或雜散光線到達影像感應器225，且因此本文中亦將其稱作"橫向光阻隔元件"。因此，由影像感應器225偵測之影像的精確度可在最終經封裝之晶粒810/810"之實施例中藉由橫向延伸區域822而增強。
根據本發明之另一實施例之成像器晶粒封裝可藉由一與上述方式類似之方式來形成，除了成像器晶粒未用玻璃層覆蓋之外。取而代之，"良品透鏡"(KGL)經識別或鑑定且隨後被置於良品成像器晶粒上。包含組合有KGL之良品成像器之KGD接著可置於一暫時載體上，完全限制每一影像感應器225之周邊的間隙器接觸該暫時載體。接著可藉由成形方法或障壁及填充方法囊封此等總成，且其後將其單一化以形成最終晶粒封裝。
第二實施例之一變體展示於圖9－圖14中。圖9說明由一玻璃基板904形成之複數個透鏡900A－E。可藉由此項技術中已知之方法對透鏡900A－E進行個別鑑定以確定為良品透鏡。測試之後，可沿切割線902執行一切割操作以生成複數個個別透鏡。如圖10所示，其後可將複數個良品透鏡 900'個別置放於位於一TWI晶圓960上之複數個良品成像器晶粒910上。如上所述，參看以上所描述之圖1－圖8及TWI晶圓216，如圖10－圖14所說明之TWI晶圓960可包含一製造基板908及至少一位於相鄰成像器晶粒910之間且自製造基板908之活性表面912延伸至背面913並與RDL接觸的傳導互連236'。該RDL可呈形成於TWI晶圓960之第二表面212'上之傳導迹線238'之形式。TWI晶圓960亦可包含形成於傳導迹線238'上且與傳導迹線238'接觸的第一複數個離散傳導元件240'。
該複數個良品透鏡900'可各自沿周邊被支撐於位於製造基板908之活性表面912上之複數個間隙器242上且附著至該等間隙器242，在製造基板908中至少一良品透鏡900'可置放於一良品成像器晶粒910上。間隙器242/242'可經組態以為所附著之良品透鏡900'提供支撐且在堆疊良品透鏡900'/900"之間或良品透鏡900'與TWI晶圓960之間提供一選定垂直空間。間隙器242'亦可經組態以相抵於暫時載體410進行密封且防止囊封材料接觸良品透鏡900'/900"。實施圖9及圖10中所描述之組態可藉由確保不將不良透鏡置放於良好成像器上且因此降低浪費之材料與組件部件的量來改良成像器晶粒封裝之產率。此外，該組態可確保不將良好透鏡置放於不良成像器上。
將良品透鏡900'/900"置放於良品成像器晶粒910上之後，該附著有良品透鏡900'/900"之良品成像器晶粒910可藉由切割操作來單一化而產生複數個KGD 510'。如上所 述，且如圖11所示，KGD 510'可包括至少一堆疊於良品透鏡900'上之額外良品透鏡900"及相應間隙器242"(由虛線展示)以達成一至成像器晶粒910上之所要聚焦。
參看圖12，KGD 510'可正面朝下置放於一暫時載體410'(諸如薄膜框帶或玻璃載體)上，其中間隙器242'經定位而抵靠該暫時載體410'且固定至該暫時載體410'以防止囊封材料接觸良品透鏡900'/900"。由於KGD 510'係正面朝下置放於暫時載體410'上，因此KGD 510'經展示相對於圖10及圖11反轉。一旦附著於暫時載體410'，KGD 510'可由囊封材料512'囊封，因此生成重構晶圓930，如圖13中所示。如上所述，囊封材料512'可包含已知用於囊封半導體之任何習知化合物。囊封方法可包括此項技術中已知之成形方法或障壁及填充方法。
其後，重構晶圓930可經受適當處理以形成一延伸穿過第一組離散傳導元件240'及囊封材料512'的大體上平坦之表面950。該處理可進一步提供對第一複數個離散傳導元件240'之至少部分曝露。在平坦化表面950之後，第二複數個離散傳導元件620'(諸如由傳導材料(例如焊料、另一金屬、一導體填充聚合物等)製成之焊球、凸塊、圓柱或釘)可結合至第一複數個離散傳導元件240'。該第二複數個離散傳導元件620'可提供對一載體基板或其他較高層次電路總成之隨後附著。如圖14所示，該第二複數個離散傳導元件中之一離散元件可操作地耦接至第一複數個離散傳導元件中之一離散元件。如上所述，在使用壓縮成形囊封方法 之本發明之一實施例中，該第一複數個離散傳導元件240'中之至少一部分可在壓縮成形方法期間保持曝露，且因此既不需平坦化處理亦不需第二複數個離散傳導元件。
囊封後，可移除暫時載體410'且執行一貫穿囊封材料512'之切割操作，從而產生最終經封裝之晶粒810"，如圖14所示。
圖15中說明根據本發明之一實施例之包括一成像器晶粒封裝810/810'/810"的基於處理器之系統1060。非限制性地，該系統1060可包括一電腦系統、相機系統、掃描器、機器視覺系統、車輛導航系統、視訊電話、監視系統、自動聚焦系統、星體追蹤系統、運動偵測系統、影像穩定化系統，其中每一者可經組態以使用本發明之一實施例。
舉例而言，基於處理器之系統1060(諸如，一電腦系統)通常包含一中央處理單元(CPU)962，例如，可經由匯流排966與輸入/輸出(I/O)裝置964通信之微處理器。該成像器晶粒封裝810/810'/810"亦可經由匯流排966與系統1060通信。該系統1060亦包括隨機存取記憶體(RAM)968，且在電腦系統之情況下可包括周邊裝置，諸如，亦可經由匯流排966與CPU 962通信之軟性磁碟機970及緊密光碟(CD)ROM驅動機972。CPU 962、成像器晶粒封裝810/810'/810"及記憶體968可整合於一單一IC晶片上。
已藉由實例之方式於圖示中展示了特定實施例且在本文中對其進行了詳細描述。然而本發明可易於進行各種修改及採用替代形式。應瞭解本發明不欲限於所揭示之特定形 式。本發明而是包括落在由以下所附申請專利範圍界定之本發明的精神與範圍內的所有修改、等效物及替代物。
110‧‧‧半導體晶圓
111‧‧‧晶粒區域之活性表面
112‧‧‧活性表面111之感應區域
142‧‧‧街道
210‧‧‧晶圓之第一表面
212/212'‧‧‧晶圓之第二表面
216‧‧‧TWI晶圓
218‧‧‧晶粒區域
225‧‧‧影像感應器
226‧‧‧成像器晶粒
232‧‧‧製造基板
234‧‧‧基板活性表面
235‧‧‧基板背面
236/236'‧‧‧傳導互連
238/238'‧‧‧傳導迹線
240/240'‧‧‧離散傳導元件
242/242'/242"‧‧‧間隙器
310‧‧‧玻璃層
310'‧‧‧基板
311'‧‧‧透鏡
312‧‧‧切口
410/410'‧‧‧暫時載體
450‧‧‧所要間隙寬度
510/510'‧‧‧良品晶粒
512/512'‧‧‧囊封材料
550‧‧‧模具空穴
552‧‧‧可壓縮適型元件
610‧‧‧晶圓
612‧‧‧囊封材料之大體上平坦的表面
620/620'‧‧‧離散傳導元件
710‧‧‧切割帶
810/810'/810"‧‧‧成像器晶粒封裝
822‧‧‧橫向延伸區域
900'/900"‧‧‧良品透鏡
900A、900B、900C、900D、900E‧‧‧ 透鏡
902‧‧‧切割線
904‧‧‧玻璃基板
908‧‧‧製造基板
910‧‧‧良品成像器晶粒
912‧‧‧基板之活性表面
913‧‧‧基板背面
930‧‧‧重構晶圓
950‧‧‧囊封材料之大體上平坦的表面
960‧‧‧TWI晶圓
962‧‧‧中央處理單元
964‧‧‧輸入輸出(I/O)裝置
966‧‧‧匯流排
968‧‧‧隨機存取記憶體
970‧‧‧軟性磁碟機
972‧‧‧緊密光碟唯讀記憶體驅動機
1060‧‧‧基於處理器之系統
圖1為根據本發明之一實施例之具有多個離散成像器晶粒之陣列附著於其上的半導體成像器晶圓之俯視圖；圖2為根據本發明之一實施例之一成像器晶圓的橫截面圖；圖3(a)及圖3(b)為根據本發明之一實施例之具有一所附著之玻璃層的成像器晶圓的橫截面圖；圖3(c)為根據本發明之其他實施例之具有一所附著之透鏡承載基板的成像器晶圓的橫截面圖；圖4為根據本發明之一實施例之在切割操作後具有一所附著之玻璃層的成像器晶圓的橫截面圖；圖5為根據本發明之一實施例之包括附著至一暫時載體上之複數個成像器晶粒之重構晶圓的橫截面圖；圖5(a)為根據本發明之實施例之包括位於一模具空穴中之暫時載體上之複數個成像器晶粒的重構晶圓的橫截面圖；圖6為根據本發明之一實施例之包括複數個經囊封之成像器晶粒之重構晶圓的橫截面圖；圖7為根據本發明之一實施例之複數個單一化成像器晶粒封裝的橫截面圖；圖8(a)及圖8(b)為根據本發明之一實施例之一成像器晶粒封裝的橫截面圖； 圖9為根據本發明之一實施例之複數個透鏡的橫截面圖；圖10為根據本發明之一實施例之附著於一成像器晶圓之複數個透鏡的橫截面圖；圖11為根據本發明之一實施例之至少附著有一透鏡之成像器晶粒的橫截面圖；圖12為根據本發明之一實施例之附著於一暫時載體之複數個成像器晶粒的橫截面圖；圖13為根據本發明之一實施例之包括複數個經囊封之成像器晶粒之重構晶圓的橫截面圖；圖14為根據本發明之一實施例之一最終成像器晶粒封裝的橫截面圖；及圖15為根據本發明之一實施例之包括一成像器晶粒封裝之系統的說明。
225‧‧‧影像感應器
810‧‧‧最終經封裝之晶粒
822‧‧‧橫向延伸區域

Claims (25)

  1. 一種封裝一成像器晶粒之方法，其包含：將至少一光學元件定位於由一製造基板承載之複數個成像器晶粒中之至少一成像器晶粒的至少一影像感應器之上；自其他成像器晶粒單一化該等成像器晶粒；將複數個成像器晶粒固定至一暫時載體，其中該複數個成像器晶粒之上之光學元件經固定或經定位而鄰近該暫時載體；至少部分地囊封該暫時載體上之該複數個成像器晶粒以形成一重構晶圓；及自該重構晶圓單一化至少部分囊封之成像器晶粒。
  2. 如請求項1之方法，其中定位至少一光學元件包含將一透明層以及一承載複數個橫向放置的透鏡之基板中之至少一者定位於該製造基板之上。
  3. 如請求項2之方法，其中單一化該複數個成像器晶粒包括在該透明層或該承載複數個透鏡之基板中形成切口，其中該等切口之表面在該複數個成像器晶粒之至少部分之上橫向延伸。
  4. 如請求項3之方法，其中單一化該等良品晶粒包含形成具有一寬於其一下部區域之上部區域之切口。
  5. 如請求項1之方法，其進一步包含：測試該複數個成像器晶粒以確定良品晶粒。
  6. 如請求項1之方法，其進一步包含： 藉由在導入囊封材料進入一模具空穴之前，於該模具空穴中的一可壓縮元件中接收離散傳導元件的至少末端部分，以防止該囊封材料覆蓋自該複數個成像器晶粒突出之該離散傳導元件的該至少末端部分。
  7. 如請求項1之方法，其進一步包含：至少部分地曝露嵌入囊封材料中之離散傳導元件之部分。
  8. 如請求項1之方法，其進一步包含：自該暫時載體移除該重構晶圓。
  9. 一種成像器晶粒封裝，其包含：一成像器晶粒，其包含位於該成像器晶粒之一活性表面上之一影像感應器；在該成像器晶粒之一背面上的至少一接點；一在該影像感應器之上之光學元件；及一囊封材料，其包圍該成像器晶粒且包括一在該成像器晶粒之該活性表面之一部分之上橫向延伸的橫向光阻隔元件。
  10. 如請求項9之成像器晶粒封裝，其中該囊封材料覆蓋該成像器晶粒之該背面。
  11. 如請求項10之成像器晶粒封裝，其中自該至少一接點突出之至少一離散傳導元件包括一自該囊封材料突出之末端。
  12. 如請求項10之成像器晶粒封裝，其中自該至少一接點突出之至少一離散傳導元件被囊封材料完全包圍。
  13. 如請求項9之成像器晶粒封裝，其中該橫向光阻隔元件大體上橫向延伸至超出該影像感應器之一外周邊之一位置。
  14. 如請求項9之成像器晶粒封裝，其中該光學元件包含一具有一傾斜邊緣或凹口邊緣之透明材料層且該橫向光阻隔元件包含覆蓋該傾斜邊緣或凹口邊緣之至少部分橫向延伸的表面之囊封材料。
  15. 一種薄膜框帶，其包含：一大體上平坦之基板；及一位於該大體上平坦之基板上的紫外線敏感黏著劑材料，該紫外線敏感黏著劑材料經組態以在該紫外線敏感黏著劑材料曝露於紫外線輻射下時釋放一所黏附之物件。
  16. 一種電子裝置，其包含：一基於處理器之裝置；及一可操作地耦接至該基於處理器之裝置之成像器晶粒封裝，且該成像器晶粒封裝包含：一成像器晶粒，其包含一在該成像器晶粒之一活性表面上之一影像感應器；在該成像器晶粒之一背面上的至少一接點；一在該影像感應器之上之光學元件；及一囊封材料，其包圍該成像器晶粒且包括一在該成像器晶粒之該活性表面之一部分之上橫向延伸的橫向光阻隔元件。
  17. 一種良品成像器之集合，其包含：駐留於一單一平面中之複數個成像器；在該複數個成像器之影像感應器之上且鄰近於該單一平面的光學元件；及位在相鄰成像器之間且將該複數個成像器彼此固定在一起之囊封材料。
  18. 如請求項17之集合，其中該複數個成像器由良品成像器組成。
  19. 如請求項18之集合，其中該等光學元件包含透鏡。
  20. 如請求項17之集合，其中囊封材料在該複數個成像器之活性表面之上至少部分地橫向延伸。
  21. 一種成像器處理總成，其包含：一載體；及固定至該載體之複數個成像器總成，每一成像器總成包括：一成像器晶粒，其包括一位於該成像器晶粒之一活性表面上之影像感應器；及一在該影像感應器之上之光學元件，該光學元件經固定或經定位而鄰近該載體。
  22. 如請求項21之成像器處理總成，其進一步包含位在該複數個成像器總成之相鄰成像器總成之間的囊封材料。
  23. 一種封裝一成像器晶粒之方法，其包含：在由一製造基板承載之複數個成像器晶粒中之相鄰成像器晶粒之間切割至穿過該製造基板之一厚度以形成複 數個個別成像器晶粒；將該複數個個別成像器晶粒中經鑑定之複數個良品成像器晶粒固定至一暫時載體；至少部分地囊封在該暫時載體上的該複數個良品晶粒以形成一重構晶圓；及自該重構晶圓單一化該至少部分囊封之複數個良品成像器晶粒。
  24. 如請求項23之方法，其進一步包含在切割至穿過該製造基板之一厚度之前將至少一光學元件定位於由該製造基板所承載之複數個成像器晶粒中之至少一成像器晶粒之上。
  25. 一種封裝一成像器晶粒之方法，其包含：在一包括複數個成像器晶粒之晶圓的一活性表面之上附著至少一光學元件，每一成像器晶粒皆定位於該活性表面上；在相鄰成像器晶粒之間切割該晶圓以生成複數個個別成像器晶粒；將該複數個個別成像器晶粒中之至少一成像器晶粒固定至一暫時載體；藉由至少部分地囊封在該暫時載體上之該至少一成像器晶粒而形成一重構晶圓；及自該重構晶圓單一化該至少部分囊封之至少一成像器晶粒。
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