TWI400214B - 陶瓷材料，燒結之陶瓷及其元件，製造及使用該陶瓷之方法 - Google Patents

陶瓷材料，燒結之陶瓷及其元件，製造及使用該陶瓷之方法 Download PDF

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TWI400214B
TWI400214B TW096117573A TW96117573A TWI400214B TW I400214 B TWI400214 B TW I400214B TW 096117573 A TW096117573 A TW 096117573A TW 96117573 A TW96117573 A TW 96117573A TW I400214 B TWI400214 B TW I400214B
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Taiwan
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phase
ceramic
pure
sintered
phases
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TW096117573A
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TW200804227A (en
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Pavol Dudesek
Christian Hoffmann
Danilo Suvorov
Matjaz Valant
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Epcos Ag
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    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H01G4/1263—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates containing also zirconium oxides or zirconates
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Description

陶瓷材料，燒結之陶瓷及其元件，製造及使用該陶瓷之方法
利用LTCC技術(低溫燒結陶瓷技術)可以製造出具有多個金屬化平面層的多層陶瓷元件，這種多層陶瓷元件可以將許多被動元件(例如線路、電阻、電容、以及電感)整合進去。因此可以在LTCC陶瓷基板上形成包含這些被動元件的電路及元件。
在使用LTCC技術時，電容的整合度愈高，就可以使用介電常數就愈大的陶瓷材料。但是介電常數太大卻會對電感的整合造成不利的影響，因此必須根據介電常數的大小選擇最適用的陶瓷材料。除了介電常數外，對陶瓷材料的其他要求還包括燒結溫度要夠低，以便能夠使用成本較低的電極材料，例如由銀構成的電極材料。此外，陶瓷材料的介電特性及其他特性的溫度變化過程也都要很小，以便利用LTCC技術製造的元件可以被應用在很大的溫度區間，而且元件的特性不會發生不容許的變化。
到目前為止業界還沒有發現任何一種介電常數大於20的陶瓷材料具有夠低的燒結溫度，或是介電常數具有必要的穩定性而且能夠以LTCC技術加工的陶瓷材料。
本發明的目的是提出一種陶瓷材料，以此種陶瓷材料可以製造出前面提及的元件，而且不會具有前面提及的缺點。
採用具有申請專利範圍第1項之特徵的陶瓷備料即可達成上述目的。本發明的各種有利的實施方式、以本發明的陶瓷材料燒結成的陶瓷、以這種陶瓷製造的元件、以及製造這種陶瓷的方法及這種陶瓷的有利的應用方式均記載於申請專利範圍中的其他項目中。
本發明提出一種由兩種純相位A及B混合成的陶瓷材料。這種雙相位混合物的成分可以寫成xA＋(1－x)B，其中0<x<1。相位A是Bi3 NbO7 的一種立方晶形至四方晶形的變態。相位B是Bi2 (Zn2/3 Nb4/3 )O7 的一種單斜晶系的燒綠石變態。相位A及相位B混合會構成純相位的疇域(domain)。
從上述決定純相位的晶體結構的基本成分出發，在整個材料中，兩種相位(相位A及相位B)中的任何一種相位所含的元素Bi、Zn、Nb被其他金屬原子取代的比例最多可以分別達到30%莫耳百分比的程度。此外，鈮(Nb)甚至可以完全被鉭(Ta)取代。被用來取代Bi、Zn、Nb的金屬原子最好是在可比較的原子直徑的情況下，和Bi、Zn、Nb具有相同或相近的原子價，這樣這些金屬原子就可以在毫無問題或是不會造成結晶相位太大的晶格畸變的情況下，取代初始元素的晶格位置。
鉍(Bi)可以被一種或數種元素(包括Ca、Sr、Ba、Pb、Cd、Y、La、以及一種原子序從58到71的稀土元素)取代的比例最多達到30%莫耳百分比。不過從結晶學的角度來看，以上所述的元素取代並不會使相位A或相位B的結晶變態發生改變。
在相位B中，鋅(Zn)可以被一種或數種元素(包括Mg、Ca、Co、Mn、Ni、Fe、Cr、Cu)取代的比例最多達到30%莫耳百分比。同樣的，這種元素取代方式並不會使相位的結晶變態發生改變。
在兩種純相位(相位A及相位B)中的鈮(Nb)都可以被一種或數種元素(包括Sn、Ti、Hf、Sb、Ta、V、W、Mo)取代的比例最多達到30%莫耳百分比。同樣的，這種元素取代方式並不會使相位A或相位B的結晶變態發生改變。此外，鈮(Nb)可以全部被Sb取代，而且不論是純相位或混合相位的相位都不會因此而改變。
本發明提出的陶瓷材料的有利的成分可以在Zn-Nb-Bi等3個元素的相位圖中被構成一個四邊形的4個點(A、B、C、D)定義出來。對本發明而言，位於這個四邊形內的成分就是適當的成分，也就是符合燒結溫度夠低、介電常數夠大、以及介電品質因數很高等要求的成分。根據在陶瓷材料中所佔的莫耳百分比，這4個點(A、B、C、D)的定義如下：
A：Zn=4.0；Nb=30.0；Bi=66.0
B：Zn=7.8；Nb=25.0；Bi=67.2
C：Zn=16.0；Nb=30.0；Bi=54.0
D：Zn=15.0；Nb=35.0；Bi=50.0
以低於960℃的燒結溫度(有時甚至是低於900℃的燒結溫度)可以將以上提及的陶瓷材料燒結成介電常數介於65至95之間的陶瓷。同時以1GHz的測量頻率測得這種陶瓷的介電品質因數可以達到800以上。
在一種有利的陶瓷中，相位A佔陶瓷材料的莫耳比例x介於0.1至0.8之間。例如1：1(相位A：相位B)的混合比例是一種很適當的混合比例。相位A及相位B的混合比例等於或接近1：1的陶瓷成分的優點是，經由這種方式會使材料的溫度常數(尤其是這兩種純相位的介電常數的溫度係數)相互抵消，因此可以將整個陶瓷材料的溫度常數降到最低。之所以會產生這種現象的原因是，純相位B的介電常數的溫度係數是負的，而純相位B的介電常數的溫度係數則是正的。例如，相位A及相位B以1：1的比例在－44℃至＋155℃的溫度之間進行相位混合，所測得的介電常數的溫度係數(以二者混合成的材料製成的介電共振器的共振頻率測得的介電常數的溫度係數)只有－5 ppm。這種陶瓷的介電常數ε＝81，介電品質因數Q＝1000(測量頻率1GHz)，或是品質因數與頻率的乘積Q x f＝1000 GHz。
本發明的陶瓷材料的另外一個優點是，一直到溫度高於燒結溫度時，本發明的陶瓷材料對於溫度的反應都會比含銀的電極材料更不敏感。因此可以將含銀電極印刷在由本發明的陶瓷材料製成的胚料上，並一起燒結成製成的元件，而且不會因為某種元素被銀取代，或是因為另外添加銀，而使相位成分產生變化。因此本發明的陶瓷材料及其製造出來的陶瓷特別適於搭配具有低成本優勢的銀電極，以用來製造陶瓷元件，尤其是製造陶瓷多層元件。
只要相位A及相位B符合初始成分的要求，就可以確保陶瓷會具有前面提及的優良特性。有一個例外是鈮最多可以100%被鉭取代，但是並不會使陶瓷的特性造成什麼影響，如果以前面提及的替代原子取代相位A或相位B中的一種或數種元素，因而使陶瓷的特性發生改變，則取代的比例最多只能達到30%莫耳百分比，也就是說為達到取代目的所需使用的取代原子最多只能佔整個陶瓷的30%莫耳百分比。
例如，一種可能的限制是因為不適當的相位混合比例以及鉍被其他原子過度取代，致使鉍在整個陶瓷中的含量下降過多而造成的。在這種情況下，可以觀察到陶瓷材料的穩定性低於含銀電極材料的穩定性的現象，這種不穩定性會導致相位的變態，加上未經定義的成分可能導致陶瓷材料的特性變差，而使陶瓷材料變得難以控制。只要鉍在整個陶瓷材料中的含量大於50%莫耳百分比，就可以確保陶瓷材料具有良好的穩定性。但是在個別情況下，陶瓷材料成分中的鉍含量也可以處於較低的水平，只要這種成分在燒結時相對於含銀材料處於穩定狀態即可。
以陶瓷材料製成的元件(也就是以燒結的陶瓷製成的元件)最好是具有多層結構，也就是在一個單片的陶瓷本體上形成多個陶瓷層，且在陶瓷層之間設有金屬化平面層。陶瓷層是疊成一堆一起燒結而成，其中經由藉通孔敷鍍彼此形成電路接通的結構化的金屬化平面層可以形成被動元件及被動元件的電路接通。
被動元件的電路接通可以構成一個完整的獨立的元件，例如構成一個行動無線電通訊用的LC濾波器。另一種可能是以前面提及的陶瓷材料製造的將被動元件整合進去的多層陶瓷作為電路元件的基板，尤其是作為由不同的電路元件構成的模組的基板。這種基板可以為整合在模組內的各種元件提供必要的電路接通及電路接通所需的配合元件。
本發明的陶瓷材料的製造是以已知的相位A及相位B作為初始材料。M.valant及D.Suvrov於2003年在J.Am.Cer.Soc.86[6]939－944頁中發表的一篇名為"Solid solutions Bi2 O3 －Nb2 O5 "的文章中有關於相位A的詳細描述。X.VWang於1997年在J.Am.Cer.Soc.80[10]2745－2748頁中發表的一篇名為"Structures,Phase transformations and dielectric properties of pyrochlores containing Bi"的文章中有關於相位B的詳細描述。相位A及相位B係分別被製成，而且最好是以所謂的混合氧化物法製成。這種製造方法是將各單一元素的粉末狀氧化物按照所需要的莫耳比例混合在一起，接著將粉未狀的混合物研磨並均勻化，然後經過一個適當的加溫熱處理過程製成所需要的相位A或相位B的結晶變態。最好是以兩階段的煅燒及燒結方法製造出純相位，其中第一階段是以較低的溫度進行，以避免液相氧化鉍過度蒸發，導致材料中的鉍含量過低。
在製造相位B時，最好是在800℃的溫度下維持一段較長的時間，以便讓從立方晶形轉變到四方晶形的相位轉換至少可以完成一部分。本發明的陶瓷成分也可以含有未完全轉換成四方晶形的相位B，但是仍能夠具有所需要的瓷材料特性。
製造出該等純相位後，將這兩種純相位研磨到粒徑小於2μ m的程度。然後將這兩種磨成粉未的純相位按照規定的比例混合成均勻的雙相位混合物，再製成箔。也可以在混合成雙相位混合物後再進行前面提及之研磨粒徑的步驟。
接著以沖壓方式在所製成的生胚薄片上形成通孔，然後以一種導電材料(例如一種含有金屬微粒的軟膏)將這些通孔填滿。然後將這種金屬化結構壓印成含有金屬的可以燒結的軟膏。
接著將多個這種薄片堆疊在一起，以便使這些金屬化結構經由通孔形成一個適當的電路接通，並與設置在金屬化結構之間的陶瓷共同產生所需的元件功能。
接著經由層壓步驟將堆疊在一起的薄片固定住。這樣就可以將在製造完成時原本是含有許多個單一元件及/或元件用的單一基板的很大一片的多層陶瓷分割成一個一個的元件及/或元件用的基板，例如以切割法完成這個分作業。然後再將經過層壓的生胚薄片燒結。
經實驗證明，之前製成的純相位在均勻的雙相位混合物中一直到溫度高於燒結溫度時都可以保持熱力學的穩定性，因此無需擔心在雙相位混合物中會發生相位轉換。由於在燒結過程過程中只有生胚薄片會被壓縮，因此很快就可以完成整個燒結過程。也就是說在燒結過程中可以快速將溫度升高到燒結溫度(例如900℃)，短時間保持在這個溫度，然後快速冷卻。
以下配合圖式及實施例對本發明的內容做進一步的說明。
第1圖顯示一種ZnO－BiO1.5 －NbO2.5 系統的三相位圖。在這個相位圖中有一個由4個點(A到D)定義出的四邊形，在這個四邊形內的每一個點都代表本發明的一種具有優良特性的陶瓷成分。這4個點(A到D)莫耳百分比座標如下：A：Zn＝4.0；NbO2.5 ＝3.0；BiO1.5 ＝66.0 B：Zn＝7.8；Nb＝25.0；Bi＝67.2 C：Zn＝16.0；Nb＝30.0；Bi＝54.0 D：Zn＝15.0；Nb＝35.0；Bi＝50.0。
此外，在這個相位圖上還可以看到3個各代表一種成分並被標示為”X”的點，而且這3個點可以連成一條直線。其中位於外面的兩個點代表的成分都是由兩種純相位(相位A及相位B)所構成。位於所連成的直線上中間的點代表的成分是兩種相位以1：1的比例混合的成分。這種成分具有近乎完美的材料特性，也就是說具有這些特性的燒結陶瓷非常適於用來製造將電容及/或電感整合進去及應用在高頻技術的電路元件，尤其是適於用來製造應用在無線通訊系統中的電路元件。如前面所述，這種以1：1的比例混合的混合相位的介電常數ε＝81，介電品質因數Q＝1000(測量頻率1GHz)，共振頻率的溫度係數(以這種陶瓷製成的介電共振器測得的共振頻率的溫度係數)為－5 ppm，品質因數與頻率的乘積為1000 GHz。
這種以1：1的比例混合的混合相位的一個有利的特性是具有很大的介電常數，因為這對於縮小元件的體積有很大的幫助。另外一個有利的特性是溫度係數很小，這是因為本發明所使用的純相位A的溫度係數是負的，而純相位B的溫度係數則正的，因此在這種混合相位中二者可以互相抵消。混合相位的燒結溫度則遠低於純相位B的燒結溫度(高於950℃)。其他以近似於1：1的比例混合成的混合相位也具有類似於上述以1：1的比例混合成的混合相位的良好特性。一般而言，如果混合相位的成分非常接近該等純相位，則這種混合相位的特性對前面提及的應用目的或所希望的應用目的而言是最不利的。本發明的所有混合相位都具有比純相位更好的特性，尤其是具有更好的溫度係數。例如，相位A：相位B的混合比例只要是在1：9到9：1之間，都可以獲得良好的材料特性。一般而言，接近純相位B所能獲得的材料特性會優於接近純相位A所能獲得的材料特性。
第2圖顯示的是一種多層電路元件的流程，這種多層電路元件具有多個含有本發明之成分的陶瓷層。如第2圖所示，第一個步驟是分別製造出純相位A及B，而且最好是以混合氧化物法製造。混合氧化物法是將製造純相位所需的電子級金屬氧化物混合在一起，接著將混合物硏磨並均勻化，然後再進行煅燒及燒結。煅燒作業最好是分兩個階段進行，其中第一階段是以較低的溫度進行，以避免液相氧化鉍過度蒸發。在製造相位A時，最好是在800℃的溫度下維持一段較長的時間，以便讓從原本形成的立方晶形轉變到四方晶形的相位轉換至少可以完成一部分。對本發明而言，四方晶形的相位優於立方晶形的相位，不過本發明的陶瓷成分也可以含有未完全轉換成四方晶形的相位，而且不致於對本發明的陶瓷成分的電學特性造成不利的影響。以混合氧化物法製造出的純相位B是一種單斜晶系的燒綠石相位。
下一個步驟是按照所需要的比例將純相位A及B混合並研磨到粒徑小於2μ m的程度。將兩種純相位一起磨成細小的粉末微粒可以使二者的混合更為均勻，並形成純相位的疇域。
下一個步驟是將均勻的混合物製成生胚薄片。製作過程是將上一個步驟獲得的混合粉末和一種可以含有黏滯性膠黏劑的溶劑混在一起，然後製作成生胚薄片，例如以拉張或澆鑄的方式製作成生胚薄片。下一個步驟是在生胚薄片變乾燥後，將留在生胚薄片上的溶劑去除，然後在生胚薄片上形成元件所需的通孔，例如以沖壓法形成通孔。然後以一種含有金屬微粒的導電材料將通孔填滿，例如可以用刮刀來進行這個工作。然後是將金屬化結構印在生胚薄片上，例如以網版印刷法來進行這個工作。這種在生胚薄片上形成的金屬化結構就相當於之後製成的多層陶瓷中的一個金屬化平面層。
下一個步驟是是將印上金屬化結構的生胚薄片按照製造元件所需的順序疊成一個序列，然後將其層壓成一個密實的薄片體。由於這個薄片體已具有一定的力學強度，因此在這個階段最好就以切割或沖壓的方式將薄片體分割開來。這樣做是有必要的，因為在前面的步驟中製作出的生胚薄片通常具有很大的基面，在其上可以為許多個相鄰排列的相同或不同的元件製作出金屬化結構。因此藉由分割就可以將這些元件分開。
下一個步驟是對分開的薄片堆疊進行燒結。藉以獲得一種單片陶瓷多層元件，在這個陶瓷多層元件中經由通孔彼此連接在一起的不同的金屬化平面層中的金屬化結構會經由相互作用產生不同的被動元件功能，例如電容及電感。如果在燒結之前尚未將外電極整合在箔上，則在最後一個步驟中可以在單片陶瓷元件上設置外電極。
第4圖顯示本發明的一個經過磨光處理的實心陶瓷的陶瓷結構的一張斷面照片。從這張照片可以看出，混合相位是由一種主要是歸屬於純相位A的連續相位構成。照片中的亮點代表歸屬於純相位B的雜質。照片中的黑點及黑色區域是由殘留在這個測試樣品(實心陶瓷)中的氣泡或雜質所造成的。從這張照片還可以看出在燒結時有發生晶粒生長的現象。從這張照片可以看出大部分的晶粒直徑都不超過5μ m，有些晶粒直徑則達到10μ m左右。
第3圖顯示一種可以用本發明的由兩種相位構成的混合陶瓷製成的元件。這種元件具有6個堆疊在一起及一起燒結成的陶瓷層(K1至K6)。在每兩個陶瓷層(K)之間都有一個帶有金屬化結構(M)的金屬化平面層。金屬化結構(M)及不同的金屬化平面層之間是經由通孔(DK)形成必要的導電連接。
第3圖以示意方式顯示兩個元件，其中電容(C)是由兩個設置在相鄰的金屬化平面層中的金屬面所構成，螺旋狀結構的電感(L)則是由多個經由通孔連接在一起的半回路所構成。陶瓷體的底部設有外電極(AK，AK’)，元件可以經由外電極(AK，AK’)與外界的電路環境形成觸點接通。這種元件可以是一種LC濾波器，也就是由L節段和C節段經適當的電路接通構成的帶通濾波器，這種帶通濾波器可以應用在行動通訊的終端設備。
此外，本發明的多層陶瓷也可以作為其他元件的基板。除了位於底部的外電極外，作為基板用的多層瓷的頂面還具有連接面(未圖示)，在這些連接面之上可以設置分立的元件、整合的元件、或是任意的元件晶片，例如設置一個透過聲音的表面波工作的元件的具有金屬化結構的壓電晶體。
以本發明的陶瓷製造的陶瓷元件的金屬化結構可以是由銀或是其他能夠耐受燒結溫度的金屬所構成。同樣的，可以用含銀材料或銀鈀合金將通孔填滿。以本發明的陶瓷製造的陶瓷可以是具有多層構造的實心陶瓷。另外一種可能性是將結構化的生胚薄片疊成一個多層堆疊並加以燒結，以形成三度空間的結構。例如一種可能的情況是在這多層堆疊內部形成一個開放式或封閉式的空腔。如果是開放式的空腔，則可以放入一個分立的元件，並使這個分立的元件與金屬化結構連接。這種做法可以製造出一種特別密實的元件。
本發明的範圍並不限於以上提及的實施例。本發明的其他成分中的純相位的金屬成分最多可以有30%莫耳百分比被前面提及的替代原子取代。對於以替代原子取代及因此所能獲得的陶瓷特性而言，最重要的條件是要能夠維持純相位的晶體結構。因此原子序及原子直徑相似的金屬通常都可以相互取代，不會有問題。本發明的純相位A及B的混合物的成分有些是由很少量的純相位A(或純相位B)及大量的純相位B(或純相位A)所構成。從製造元件所需的電學特性來看，本發明的每一種混合相位的電學特性均優於純相位的電學特性。
同樣的，本發明的以陶瓷製造的元件並不限於以上提及的實施例。原則上以本發明的陶瓷可以製造出許多不同的元件，尤其是特別適於用來製造內部有整合不同的被動元件的元件。這種元件最好是被應用在不會承受最大功率負荷的場合，尤其是信號處理元件及資料處理元件更是如此。
第1圖：顯示一種Zn－Nb－Bi系統的三相位圖，並將有利的成分填入這個三相位圖。
第2圖：顯示元件的製造流程。
第3圖：顯示一種以本發明的陶瓷材料製造的元件的斷面圖。
第4圖：顯示一種含有本發明的成分的陶瓷結構的照片。

Claims (18)

  1. 一種由兩種純相位混合成的陶瓷材料，這種雙相位混合物的成分可以寫成xA+(1-x)B，其中：-- 0<x<1；-- 相位A是Bi3 NbO7 的一種立方晶形至四方晶形的變態；-- 相位B是Bi2 (Zn2/3 Nb4/3 )O7 的一種單斜晶系的燒綠石變態；-- 在整個材料中，該兩種相位所含的元素鉍(Bi)可以被一種或數種包括Ca、Sr、Ba、Pb、Cd、Y、La、以及一種原子序從58到71的稀土元素之元素取代，取代的比例最多可達到30%莫耳百分比；元素鋅(Zn)可以被一種或數種包括Mg、Ca、Co、Mn、Ni、Fe、Cr、Cu之元素取代，取代的比例最多可達到30%莫耳百分比；及元素鈮(Nb)可以被一種或數種包括Sn、Ti、Hf、Sb、Ta、V、W、Mo之元素取代，取代的比例最多可達到30%莫耳百分比，而且Nb甚至可以100%被Ta取代。
  2. 如申請專利範圍第1項的材料，其係以下列條件並透過4個點(A、B、C、D)來定義元素Zn-Nb-Bi的相位圖：A：Zn=4.0；Nb=30.0；Bi=66.0 B：Zn=7.8；Nb=25.0；Bi=67.2 C：Zn=16.0；Nb=30.0；Bi=54.0 D：Zn=15.0；Nb=35.0；Bi=50.0。
  3. 一種以申請專利範圍第1項或第2項的陶瓷材料製造的陶瓷，其中燒結溫度低於960℃。
  4. 如申請專利範圍第3項的陶瓷，其中介電常數介於65至95之間。
  5. 如申請專利範圍第3項的陶瓷，其中在測量頻率為1GHz時的介電品質因數大於800。
  6. 如申請專利範圍第3項的陶瓷，其中相位A佔陶瓷材料的莫耳比例x介於0.10至0.80之間。
  7. 如申請專利範圍第3項的陶瓷，其中混合物中的相位是以主要成分的純相位所呈現。
  8. 如申請專利範圍第3項的陶瓷，其中純相位A及B的疇域的直徑小於或等於10μm。
  9. 一種電子元件，具有如申請專利範圍第3項至第8項中任一項的陶瓷。
  10. 如申請專利範圍第9項的元件，其具有一個由在一個多層結構中形成的被動元件構成的電路接通，這個被燒結成一個單片堆疊的多層結構具有多個由本發明的陶瓷構成的陶瓷層，並且在陶瓷層之間設有結構化的金屬化平面層，同時這些結構化的金屬化平面層經由通孔彼此連接在一起，並形成被動元件的電路接通。
  11. 如申請專利範圍第10項的元件，其係作為LC濾波器。
  12. 如申請專利範圍第9項或第10項的元件，其係作為電子元件的基板。
  13. 一種製造如申請專利範圍第1項或第2項的陶瓷材料的方法，這種方法步驟為： -- 分別製造出純相位A及B；-- 將該等純相位磨成粉末；-- 將兩種純相位的粉末按照規定的比例混合在一起。
  14. 如申請專利範圍第13項的方法，其中將所獲得的混合物加工成胚料並燒結。
  15. 如申請專利範圍第13項的方法，其中利用混合氧化物法製造所需的純相位。
  16. 如申請專利範圍第13項的方法，其係以低於960℃的溫度完成燒結作業。
  17. 如申請專利範圍第13項至第16項中任一項的方法，其具有以下的步驟：-- 製造薄片來作為胚料；-- 以沖壓方式在薄片上形成通孔，並以一種導電材料將通孔填滿；-- 將由一種電極材料構成的金屬化結構印在薄片上；-- 將多個不同的薄片疊在一起，然後進行層壓及燒結作業。
  18. 一種如申請專利範圍第9項至第12項中任一項的電子元件之用途，其係用於製造LTCC技術用頻率範圍1~5GHz的行動無線通訊用LC濾波器。
TW096117573A 2006-05-23 2007-05-17 陶瓷材料，燒結之陶瓷及其元件，製造及使用該陶瓷之方法 TWI400214B (zh)

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US7816293B2 (en) 2010-10-19
US20090155624A1 (en) 2009-06-18
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JP5647412B2 (ja) 2014-12-24
WO2007134569A3 (de) 2008-03-06
CN101448759B (zh) 2013-06-19
KR20090015130A (ko) 2009-02-11
TW200804227A (en) 2008-01-16
WO2007134569A2 (de) 2007-11-29
JP2009537444A (ja) 2009-10-29
KR101339090B1 (ko) 2013-12-09
DE102006024231A1 (de) 2007-11-29

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