WO2007134569A3 - Keramisches material, gesinterte keramik und bauelement daraus, verfahren zur herstellung und verwendung der keramik - Google Patents
Keramisches material, gesinterte keramik und bauelement daraus, verfahren zur herstellung und verwendung der keramik Download PDFInfo
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- WO2007134569A3 WO2007134569A3 PCT/DE2007/000847 DE2007000847W WO2007134569A3 WO 2007134569 A3 WO2007134569 A3 WO 2007134569A3 DE 2007000847 W DE2007000847 W DE 2007000847W WO 2007134569 A3 WO2007134569 A3 WO 2007134569A3
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- ceramics
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- ceramic material
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- 239000000919 ceramic Substances 0.000 title abstract 4
- 229910010293 ceramic material Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000012986 modification Methods 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
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- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
- H01G4/1263—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates containing also zirconium oxides or zirconates
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Abstract
Es wird ein keramisches Mischsystem vorgeschlagen, bestehend aus einem Zwei-Phasengemisch der Reinkomponenten A und B, wobei die Phase A auf der kubischen bis tetragonalen Modifikation von Bi3NbO7 und die Phase B auf der monoklinen Pyrochlormodifikation von Bi2(Zn2/3Nb4/3)O7 beruht. Die elektrischen Eigenschaften daraus hergestellter keramischer Körper machen das Material für Bauelemente geeignet, die Mehrschichtstruktur aufweisen, in die Kapazitäten und Induktivitäten integriert sind und die in der Datenverarbeitung oder Signalverarbeitung eingesetzt werden können.
Priority Applications (4)
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KR1020087031126A KR101339090B1 (ko) | 2006-05-23 | 2007-05-09 | 세라믹 재료, 소결 세라믹, 이로부터 제조된 부품, 세라믹의 제조 방법 및 용도 |
JP2009511329A JP5647412B2 (ja) | 2006-05-23 | 2007-05-09 | セラミック材料、焼結セラミック、電気部品、セラミック材料の製造方法、及び電気部品の使用法 |
CN200780018655XA CN101448759B (zh) | 2006-05-23 | 2007-05-09 | 陶瓷材料、烧结陶瓷和由其制成的元件、制造方法和陶瓷的应用 |
US12/275,645 US7816293B2 (en) | 2006-05-23 | 2008-11-21 | Ceramic material, sintered ceramic and component made therefrom, production method and use of the ceramic |
Applications Claiming Priority (2)
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DE102006024231.9 | 2006-05-23 | ||
DE102006024231A DE102006024231B4 (de) | 2006-05-23 | 2006-05-23 | Keramisches Material, gesinterte Keramik, Verfahren zur Herstellung und Verwendung der Keramik |
Related Child Applications (1)
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US12/275,645 Continuation US7816293B2 (en) | 2006-05-23 | 2008-11-21 | Ceramic material, sintered ceramic and component made therefrom, production method and use of the ceramic |
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WO2007134569A2 WO2007134569A2 (de) | 2007-11-29 |
WO2007134569A3 true WO2007134569A3 (de) | 2008-03-06 |
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PCT/DE2007/000847 WO2007134569A2 (de) | 2006-05-23 | 2007-05-09 | Keramisches material, gesinterte keramik und bauelement daraus, verfahren zur herstellung und verwendung der keramik |
Country Status (7)
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US (1) | US7816293B2 (de) |
JP (1) | JP5647412B2 (de) |
KR (1) | KR101339090B1 (de) |
CN (1) | CN101448759B (de) |
DE (1) | DE102006024231B4 (de) |
TW (1) | TWI400214B (de) |
WO (1) | WO2007134569A2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1990328B1 (de) * | 2007-05-07 | 2011-10-26 | Siemens Aktiengesellschaft | Keramisches Pulver, keramische Schicht sowie Schichtsystem aus zwei Pyrochlorphasen und Oxiden |
US7939941B2 (en) | 2007-06-27 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of through via before contact processing |
NO20080452L (no) * | 2008-01-24 | 2009-07-27 | Well Technology As | A method and an apparatus for controlling a well barrier |
US8853830B2 (en) | 2008-05-14 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | System, structure, and method of manufacturing a semiconductor substrate stack |
CN101362084B (zh) * | 2008-09-18 | 2010-10-13 | 武汉理工大学 | 可见光响应纳米Bi3NbO7光催化剂的制备方法及其应用 |
DE102009014542B3 (de) * | 2009-02-12 | 2010-12-02 | Epcos Ag | Mehrschichtbauelement und Verfahren zur Herstellung |
US8691664B2 (en) * | 2009-04-20 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside process for a substrate |
DE102009041952B4 (de) * | 2009-09-17 | 2017-03-30 | Airbus Defence and Space GmbH | Verfahren zur Herstellung eines mehrlagigen Keramiksubstrats und mehrlagiges Keramiksubstrat und dessen Verwendung |
CN102389825B (zh) * | 2011-09-02 | 2013-10-02 | 武汉理工大学 | 一种具有可见光响应的纳米复合光催化剂的制备方法 |
JP5812035B2 (ja) * | 2013-04-04 | 2015-11-11 | Tdk株式会社 | 誘電体磁器組成物、誘電体磁器および電子部品 |
CN107004596A (zh) * | 2014-12-24 | 2017-08-01 | 国立大学法人北陆先端科学技术大学院大学 | 氧化物介电体及其制造方法、氧化物介电体的前体以及固体电子装置及其制造方法 |
DE102015120640A1 (de) | 2015-11-27 | 2017-06-01 | Epcos Ag | Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements |
CN111902883B (zh) | 2018-03-28 | 2022-04-08 | Tdk株式会社 | 电介质组合物及电子部件 |
JP7211182B2 (ja) * | 2019-03-15 | 2023-01-24 | Tdk株式会社 | 誘電体組成物および電子部品 |
CN111689776B (zh) | 2019-03-15 | 2022-07-01 | Tdk株式会社 | 电介质组合物和电子部件 |
JP7363535B2 (ja) | 2019-03-15 | 2023-10-18 | Tdk株式会社 | 誘電体組成物および電子部品 |
CN110171965B (zh) * | 2019-04-26 | 2021-07-06 | 武汉理工大学 | 一种npo电容器介质材料及其制备方法 |
CN110372377A (zh) * | 2019-07-24 | 2019-10-25 | 天津大学 | 一种巨介电常数电介质材料的制备方法 |
CN111540604B (zh) * | 2020-05-07 | 2022-05-31 | 无锡太湖学院 | 一种多层片状陶瓷电子元器件的制备方法 |
CN114956816B (zh) * | 2022-06-07 | 2023-03-24 | 清华大学 | 一种高性能烧绿石储能陶瓷材料及其制备方法与应用 |
Citations (3)
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US5449652A (en) * | 1993-06-04 | 1995-09-12 | Battelle Memorial Institute | Ceramic compositions for BZN dielectric resonators |
US6395663B1 (en) * | 2000-06-16 | 2002-05-28 | National Science Council | Low temperature sintered BI2O3-ZNO-NB2O5 ceramics and method for its formation |
FR2845685A1 (fr) * | 2002-10-15 | 2004-04-16 | Thales Sa | Materiau ceramique a forte permittivite, procede de fabrication du materiau et application a des structures multicouches ceramique |
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JPS6024070B2 (ja) | 1978-04-19 | 1985-06-11 | 株式会社村田製作所 | マイクロ波用誘電体磁器組成物 |
JPH04285046A (ja) * | 1991-03-12 | 1992-10-09 | Matsushita Electric Ind Co Ltd | 誘電体磁器組成物 |
JP3329014B2 (ja) * | 1992-09-08 | 2002-09-30 | 松下電器産業株式会社 | 誘電体磁器組成物 |
JPH07165466A (ja) * | 1993-12-10 | 1995-06-27 | Ngk Spark Plug Co Ltd | マイクロ波誘電体磁器組成物の製造方法 |
US6680269B2 (en) * | 2000-06-29 | 2004-01-20 | The Penn State Research Foundation | Bismuth pyrochlore microwave dielectric materials |
JP4494881B2 (ja) * | 2004-06-29 | 2010-06-30 | 日本特殊陶業株式会社 | 低温焼成誘電体磁器組成物及び誘電体部品 |
-
2006
- 2006-05-23 DE DE102006024231A patent/DE102006024231B4/de not_active Expired - Fee Related
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2007
- 2007-05-09 CN CN200780018655XA patent/CN101448759B/zh not_active Expired - Fee Related
- 2007-05-09 KR KR1020087031126A patent/KR101339090B1/ko not_active IP Right Cessation
- 2007-05-09 WO PCT/DE2007/000847 patent/WO2007134569A2/de active Application Filing
- 2007-05-09 JP JP2009511329A patent/JP5647412B2/ja not_active Expired - Fee Related
- 2007-05-17 TW TW096117573A patent/TWI400214B/zh not_active IP Right Cessation
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449652A (en) * | 1993-06-04 | 1995-09-12 | Battelle Memorial Institute | Ceramic compositions for BZN dielectric resonators |
WO1997010189A1 (en) * | 1993-06-04 | 1997-03-20 | Swartz Scott L | Bismuth-based dielectric ceramic compositions |
US6395663B1 (en) * | 2000-06-16 | 2002-05-28 | National Science Council | Low temperature sintered BI2O3-ZNO-NB2O5 ceramics and method for its formation |
FR2845685A1 (fr) * | 2002-10-15 | 2004-04-16 | Thales Sa | Materiau ceramique a forte permittivite, procede de fabrication du materiau et application a des structures multicouches ceramique |
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WO2007134569A2 (de) | 2007-11-29 |
JP2009537444A (ja) | 2009-10-29 |
DE102006024231A1 (de) | 2007-11-29 |
KR20090015130A (ko) | 2009-02-11 |
DE102006024231B4 (de) | 2010-01-28 |
JP5647412B2 (ja) | 2014-12-24 |
TW200804227A (en) | 2008-01-16 |
US20090155624A1 (en) | 2009-06-18 |
US7816293B2 (en) | 2010-10-19 |
KR101339090B1 (ko) | 2013-12-09 |
TWI400214B (zh) | 2013-07-01 |
CN101448759B (zh) | 2013-06-19 |
CN101448759A (zh) | 2009-06-03 |
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