TWI397128B - 製作一平面雙閘電晶體之方法 - Google Patents

製作一平面雙閘電晶體之方法 Download PDF

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Publication number
TWI397128B
TWI397128B TW095100395A TW95100395A TWI397128B TW I397128 B TWI397128 B TW I397128B TW 095100395 A TW095100395 A TW 095100395A TW 95100395 A TW95100395 A TW 95100395A TW I397128 B TWI397128 B TW I397128B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
gate
sidewall
transistor
Prior art date
Application number
TW095100395A
Other languages
English (en)
Chinese (zh)
Other versions
TW200636869A (en
Inventor
Marius K Orlowski
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200636869A publication Critical patent/TW200636869A/zh
Application granted granted Critical
Publication of TWI397128B publication Critical patent/TWI397128B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW095100395A 2005-01-31 2006-01-04 製作一平面雙閘電晶體之方法 TWI397128B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/047,448 US7202117B2 (en) 2005-01-31 2005-01-31 Method of making a planar double-gated transistor

Publications (2)

Publication Number Publication Date
TW200636869A TW200636869A (en) 2006-10-16
TWI397128B true TWI397128B (zh) 2013-05-21

Family

ID=36757105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095100395A TWI397128B (zh) 2005-01-31 2006-01-04 製作一平面雙閘電晶體之方法

Country Status (7)

Country Link
US (1) US7202117B2 (enExample)
EP (1) EP1846945A2 (enExample)
JP (1) JP4965462B2 (enExample)
KR (1) KR20070100777A (enExample)
CN (1) CN100514547C (enExample)
TW (1) TWI397128B (enExample)
WO (1) WO2006083401A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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US7999251B2 (en) 2006-09-11 2011-08-16 International Business Machines Corporation Nanowire MOSFET with doped epitaxial contacts for source and drain
US7872303B2 (en) * 2008-08-14 2011-01-18 International Business Machines Corporation FinFET with longitudinal stress in a channel
CN101901837A (zh) * 2010-06-24 2010-12-01 复旦大学 一种栅控pn场效应晶体管及其控制方法
US9087741B2 (en) 2011-07-11 2015-07-21 International Business Machines Corporation CMOS with dual raised source and drain for NMOS and PMOS
FR2995720B1 (fr) * 2012-09-18 2014-10-24 Commissariat Energie Atomique Procede de realisation d'un dispositif a effet de champ a double grille a grilles independantes
CN104702226A (zh) * 2015-03-31 2015-06-10 宜确半导体（苏州）有限公司 一种改进的共源共栅射频功率放大器
KR102527382B1 (ko) 2016-06-21 2023-04-28 삼성전자주식회사 반도체 소자
FR3060840B1 (fr) * 2016-12-15 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes
FR3060841B1 (fr) 2016-12-15 2021-02-12 Commissariat Energie Atomique Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes
US10921619B2 (en) 2019-03-12 2021-02-16 Cisco Technology, Inc. Optical modulator with region epitaxially re-grown over polycrystalline silicon

Citations (5)

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US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
US6495403B1 (en) * 1999-10-05 2002-12-17 Stmicroelectronics S.A. Gate-all-around semiconductor device and process for fabricating the same
US6580132B1 (en) * 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET
US6605847B2 (en) * 2001-04-12 2003-08-12 Samsung Electronics Co., Ltd. Semiconductor device having gate all around type transistor and method of forming the same
US6642115B1 (en) * 2000-05-15 2003-11-04 International Business Machines Corporation Double-gate FET with planarized surfaces and self-aligned silicides

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DE3063191D1 (en) * 1979-11-29 1983-06-16 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor integrated circuit
US5258635A (en) 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
US5604368A (en) * 1994-07-15 1997-02-18 International Business Machines Corporation Self-aligned double-gate MOSFET by selective lateral epitaxy
JP2967477B2 (ja) * 1997-11-26 1999-10-25 日本電気株式会社 半導体装置の製造方法
US6339002B1 (en) 1999-02-10 2002-01-15 International Business Machines Corporation Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
US6365465B1 (en) * 1999-03-19 2002-04-02 International Business Machines Corporation Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
WO2001028000A1 (en) 1999-10-14 2001-04-19 Shin-Etsu Handotai Co., Ltd. Method for manufacturing soi wafer, and soi wafer
TW490745B (en) * 2000-05-15 2002-06-11 Ibm Self-aligned double gate MOSFET with separate gates
WO2002023624A2 (en) * 2000-09-14 2002-03-21 Infineon Technologies North America Corp. Field effect transistor and method of fabrication
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
FR2823010B1 (fr) * 2001-04-02 2003-08-15 St Microelectronics Sa Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor
US6960806B2 (en) * 2001-06-21 2005-11-01 International Business Machines Corporation Double gated vertical transistor with different first and second gate materials
US6967351B2 (en) * 2001-12-04 2005-11-22 International Business Machines Corporation Finfet SRAM cell using low mobility plane for cell stability and method for forming
JP3793808B2 (ja) * 2002-05-02 2006-07-05 国立大学法人東京工業大学 電界効果トランジスタの製造方法
JP2004119693A (ja) * 2002-09-26 2004-04-15 Tokyo Inst Of Technol 強誘電体メモリデバイス及び強誘電体メモリデバイスの製造方法
JP2004128079A (ja) 2002-09-30 2004-04-22 Speedfam Co Ltd Ｓｏｉウェハーのための多段局所ドライエッチング方法
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
EP1519420A2 (en) * 2003-09-25 2005-03-30 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Multiple gate semiconductor device and method for forming same
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
US6495403B1 (en) * 1999-10-05 2002-12-17 Stmicroelectronics S.A. Gate-all-around semiconductor device and process for fabricating the same
US6642115B1 (en) * 2000-05-15 2003-11-04 International Business Machines Corporation Double-gate FET with planarized surfaces and self-aligned silicides
US6605847B2 (en) * 2001-04-12 2003-08-12 Samsung Electronics Co., Ltd. Semiconductor device having gate all around type transistor and method of forming the same
US6580132B1 (en) * 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET

Also Published As

Publication number Publication date
WO2006083401A3 (en) 2007-06-14
US20060172468A1 (en) 2006-08-03
TW200636869A (en) 2006-10-16
KR20070100777A (ko) 2007-10-11
CN100514547C (zh) 2009-07-15
CN101103437A (zh) 2008-01-09
US7202117B2 (en) 2007-04-10
JP4965462B2 (ja) 2012-07-04
JP2008529301A (ja) 2008-07-31
WO2006083401A2 (en) 2006-08-10
EP1846945A2 (en) 2007-10-24

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