FR3060840B1 - Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes - Google Patents

Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes Download PDF

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FR3060840B1
FR3060840B1 FR1662531A FR1662531A FR3060840B1 FR 3060840 B1 FR3060840 B1 FR 3060840B1 FR 1662531 A FR1662531 A FR 1662531A FR 1662531 A FR1662531 A FR 1662531A FR 3060840 B1 FR3060840 B1 FR 3060840B1
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spacers
portions
semiconductor device
self
making
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FR3060840A1 (fr
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Shay REBOH
Emmanuel Augendre
Remi COQUAND
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to US15/837,405 priority patent/US10217842B2/en
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Procédé de réalisation d'un dispositif semi-conducteur (100), comportant les étapes suivantes : a) réalisation, sur un substrat (104), d'un empilement comprenant une première portion de semi-conducteur apte à former une zone active et disposée entre deux deuxièmes portions d'un matériau apte à être gravé sélectivement vis-à-vis du semi-conducteur de la première portion, b) réalisation, sur une partie de l'empilement, d'espaceurs externes (112) et d'une grille factice, c) gravure des deuxièmes portions telle que des parties restantes soient disposées sous la grille factice, d) oxydation partielle des parties restantes depuis des faces externes, formant des espaceurs internes (118), e) suppression de la grille factice et de parties non oxydées des parties restantes disposées sous la grille factice, f) réalisation d'une grille (128) entre les espaceurs externes et entre les espaceurs internes et recouvrant le canal.
FR1662531A 2016-12-15 2016-12-15 Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes Active FR3060840B1 (fr)

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US15/837,405 US10217842B2 (en) 2016-12-15 2017-12-11 Method for making a semiconductor device with self-aligned inner spacers

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Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559181B2 (en) 2013-11-26 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with buried sige oxide
US10297663B2 (en) 2017-04-19 2019-05-21 International Business Machines Corporation Gate fill utilizing replacement spacer
US10756174B2 (en) * 2017-04-26 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple-stacked semiconductor nanowires and source/drain spacers
US10170484B1 (en) * 2017-10-18 2019-01-01 Globalfoundries Inc. Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method
US10559675B2 (en) * 2017-12-21 2020-02-11 International Business Machines Corporation Stacked silicon nanotubes
US10431663B2 (en) * 2018-01-10 2019-10-01 Globalfoundries Inc. Method of forming integrated circuit with gate-all-around field effect transistor and the resulting structure
US10418449B2 (en) * 2018-01-10 2019-09-17 Globalfoundries Inc. Circuits based on complementary field-effect transistors
US10325820B1 (en) 2018-01-10 2019-06-18 International Business Machines Corporation Source and drain isolation for CMOS nanosheet with one block mask
US20190267463A1 (en) * 2018-02-28 2019-08-29 International Business Machines Corporation Low-k dielectric inner spacer for gate all around transistors
US11081567B2 (en) * 2018-03-12 2021-08-03 International Business Machines Corporation Replacement-channel fabrication of III-V nanosheet devices
US10748935B2 (en) * 2018-06-29 2020-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked vertically isolated MOSFET structure and method of forming the same
US11335807B2 (en) 2018-06-29 2022-05-17 Intel Corporation Isolation schemes for gate-all-around transistor devices
US11355608B2 (en) * 2018-09-24 2022-06-07 Intel Corporation Self-aligned gate endcap (SAGE) architectures with gate-all-around devices having epitaxial source or drain structures
US11538806B2 (en) * 2018-09-27 2022-12-27 Intel Corporation Gate-all-around integrated circuit structures having high mobility
US11469299B2 (en) * 2018-09-28 2022-10-11 Intel Corporation Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US11239359B2 (en) * 2018-09-29 2022-02-01 International Business Machines Corporation Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer
FR3091620B1 (fr) 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
US11031502B2 (en) 2019-01-08 2021-06-08 Samsung Electronics Co., Ltd. Semiconductor devices
US11239363B2 (en) 2019-01-08 2022-02-01 Samsung Electronics Co., Ltd. Semiconductor devices
US11037832B2 (en) 2019-05-29 2021-06-15 International Business Machines Corporation Threshold voltage adjustment by inner spacer material selection
KR20200137405A (ko) * 2019-05-30 2020-12-09 삼성전자주식회사 반도체 장치
FR3100083B1 (fr) 2019-08-20 2021-09-10 Commissariat Energie Atomique Procédé de guérison d’une couche implantée comprenant un traitement thermique préalable à une recristallisation par recuit laser
US11251080B2 (en) * 2019-12-02 2022-02-15 Tokyo Electron Limited Method of making 3D circuits with integrated stacked 3D metal lines for high density circuits
US11469137B2 (en) 2019-12-17 2022-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer
US11393925B2 (en) * 2019-12-31 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with nanostructure
CN111180520B (zh) * 2020-01-06 2024-02-20 中国科学院微电子研究所 半导体器件及其制备方法、集成电路及电子设备
US11508625B2 (en) 2020-01-14 2022-11-22 Tokyo Electron Limited Method of making a continuous channel between 3D CMOS
KR20210124731A (ko) * 2020-04-07 2021-10-15 삼성전자주식회사 게이트 스페이서를 갖는 반도체 소자들
CN111710717B (zh) * 2020-05-12 2024-02-13 中国科学院微电子研究所 一种半导体器件及其制作方法、电子设备
CN111710718B (zh) * 2020-05-12 2023-07-14 中国科学院微电子研究所 一种环栅半导体器件及制作方法、电子设备
US11322505B2 (en) * 2020-06-30 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric random access memory devices and methods
US11488959B2 (en) * 2020-12-29 2022-11-01 Nanya Technology Corporation Gate-all-around semiconductor device with dielectric-all-around capacitor and method for fabricating the same
KR20220134099A (ko) * 2021-03-26 2022-10-05 삼성전자주식회사 활성 패턴을 포함하는 반도체 장치 및 이의 제조 방법
US20230018480A1 (en) * 2021-07-16 2023-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363332B1 (en) * 2001-05-23 2002-12-05 Samsung Electronics Co Ltd Method for forming semiconductor device having gate all-around type transistor
US7202117B2 (en) * 2005-01-31 2007-04-10 Freescale Semiconductor, Inc. Method of making a planar double-gated transistor
KR100707208B1 (ko) * 2005-12-24 2007-04-13 삼성전자주식회사 Ｇａａ 구조의 핀-펫 및 그 제조 방법
CN101710585B (zh) * 2009-12-01 2011-04-27 中国科学院上海微系统与信息技术研究所 混合晶向积累型全包围栅cmos场效应晶体管
US9484447B2 (en) 2012-06-29 2016-11-01 Intel Corporation Integration methods to fabricate internal spacers for nanowire devices
US9006829B2 (en) 2012-08-24 2015-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Aligned gate-all-around structure
US8969149B2 (en) * 2013-05-14 2015-03-03 International Business Machines Corporation Stacked semiconductor nanowires with tunnel spacers
US9362397B2 (en) * 2013-09-24 2016-06-07 Samsung Electronics Co., Ltd. Semiconductor devices
US9219154B1 (en) * 2014-07-15 2015-12-22 International Business Machines Corporation Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors
US9853166B2 (en) * 2014-07-25 2017-12-26 International Business Machines Corporation Perfectly symmetric gate-all-around FET on suspended nanowire

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