JP4965462B2 - プレーナ型ダブルゲートトランジスタを形成する方法 - Google Patents
プレーナ型ダブルゲートトランジスタを形成する方法 Download PDFInfo
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- JP4965462B2 JP4965462B2 JP2007553098A JP2007553098A JP4965462B2 JP 4965462 B2 JP4965462 B2 JP 4965462B2 JP 2007553098 A JP2007553098 A JP 2007553098A JP 2007553098 A JP2007553098 A JP 2007553098A JP 4965462 B2 JP4965462 B2 JP 4965462B2
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- 238000000034 method Methods 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 52
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 7
- 238000007254 oxidation reaction Methods 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 44
- 239000010703 silicon Substances 0.000 description 44
- 150000004767 nitrides Chemical class 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Description
当業者であれば、これらの図における構成要素が説明を簡単かつ明瞭にするために示され、そして必ずしも寸法通りには描かれていないことが分かるであろう。例えば、これらの図における幾つかの構成要素の寸法を他の構成要素に対して誇張して描いて本発明の実施形態を理解し易くしている。
第2切断面を示す図8に続く図9に示すのは、積層構造からBOX12までを選択位置でエッチングして複数のトランジスタ形成領域、この例では、トランジスタ形成領域40,42,及び44を設けた後の半導体素子10である。トランジスタ形成領域40,42,及び44の各々は、図9に示す選択幅を有する。この図9におけるこれらの形成領域の幅は、当該形成領域に形成されることになるトランジスタのチャネル幅に対応する。
Claims (5)
- 絶縁層の上に配置されて、絶縁層の上方の第1半導体層と、第1半導体層の上方に設けられた第2半導体層と、前記第2半導体層の上方に設けられている耐酸化層とを有する予備トランジスタ積層構造を、積層側壁構造を有するパターニング済み予備トランジスタ積層構造として形成する工程と、
側壁絶縁体を、前記積層側壁構造の第1半導体層側壁部分及び第2半導体層側壁部分の上に形成する工程であって、前記第1半導体層部分の側壁絶縁体は第2半導体層部分の側壁絶縁体の膜厚よりも厚い膜厚を有する、側壁絶縁体を形成する工程と、
第2半導体層部分上の側壁絶縁体を除去する結果、第2半導体層の該当する側壁部分を露出させる、第2半導体層部分上の側壁絶縁体を除去する工程と、
in−situドープエピタキシャルソース/ドレイン領域を形成する結果、単結晶半導体材料を第2半導体層の露出側壁部分からエピタキシャル成長させる、in−situドープエピタキシャルソース/ドレイン領域を形成する工程と、
パターニング済み予備トランジスタ積層構造の耐酸化層を除去することによって第2半導体層の第1ゲート位置部分を露出させる工程と、
絶縁ライナーを露出in−situドープエピタキシャルソース/ドレイン領域、及び第2半導体層の露出第1ゲート位置部分の上に形成する工程と、
絶縁ライナーの内、第2半導体層の露出第1ゲート位置部分の上の部分を除去する工程と、
パターニング済み予備トランジスタ積層構造、及びin−situドープエピタキシャルソース/ドレイン領域をパターニングして、トランジスタの該当する幅寸法に従ったトランジスタ領域を形成し、及び第1半導体層をトランジスタ領域の反対側の両端で露出させる工程と、
第1半導体層を除去して開口を形成する工程であって、開口によって第2半導体層の第2ゲート位置部分が露出する、第1半導体層を除去して開口を形成する工程と、
ゲート誘電体を、前記ゲート誘電体が少なくとも第2半導体層の第1及び第2ゲート位置部分の上に設けられるように、第2半導体層の上に形成する工程と、
ゲート電極を、少なくとも第2半導体層の第1及び第2ゲート位置部分を覆うゲート誘電体の上に形成する工程とを備える、ダブルゲートトランジスタを形成するための方法。 - 第1半導体層はSiGeからなり、第2半導体層はSiからなり、耐酸化層は少なくともSi3N4を含有する、請求項1記載の方法。
- 第1半導体層は第2半導体層よりも50:1よりも高い割合でエッチングされるエッチング選択性を有する、請求項1記載の方法。
- 第1半導体層は第2半導体層の酸化速度よりも速い酸化速度で酸化される、請求項1記載の方法。
- 第1半導体層の酸化速度は第2半導体層の酸化速度の少なくとも4倍大きい、請求項4記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/047,448 | 2005-01-31 | ||
US11/047,448 US7202117B2 (en) | 2005-01-31 | 2005-01-31 | Method of making a planar double-gated transistor |
PCT/US2005/045202 WO2006083401A2 (en) | 2005-01-31 | 2005-12-14 | Method of making a planar double-gated transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008529301A JP2008529301A (ja) | 2008-07-31 |
JP2008529301A5 JP2008529301A5 (ja) | 2009-02-12 |
JP4965462B2 true JP4965462B2 (ja) | 2012-07-04 |
Family
ID=36757105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007553098A Expired - Fee Related JP4965462B2 (ja) | 2005-01-31 | 2005-12-14 | プレーナ型ダブルゲートトランジスタを形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7202117B2 (ja) |
EP (1) | EP1846945A2 (ja) |
JP (1) | JP4965462B2 (ja) |
KR (1) | KR20070100777A (ja) |
CN (1) | CN100514547C (ja) |
TW (1) | TWI397128B (ja) |
WO (1) | WO2006083401A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7999251B2 (en) | 2006-09-11 | 2011-08-16 | International Business Machines Corporation | Nanowire MOSFET with doped epitaxial contacts for source and drain |
US7872303B2 (en) * | 2008-08-14 | 2011-01-18 | International Business Machines Corporation | FinFET with longitudinal stress in a channel |
CN101901837A (zh) * | 2010-06-24 | 2010-12-01 | 复旦大学 | 一种栅控pn场效应晶体管及其控制方法 |
US9087741B2 (en) | 2011-07-11 | 2015-07-21 | International Business Machines Corporation | CMOS with dual raised source and drain for NMOS and PMOS |
FR2995720B1 (fr) * | 2012-09-18 | 2014-10-24 | Commissariat Energie Atomique | Procede de realisation d'un dispositif a effet de champ a double grille a grilles independantes |
CN104702226A (zh) * | 2015-03-31 | 2015-06-10 | 宜确半导体(苏州)有限公司 | 一种改进的共源共栅射频功率放大器 |
KR102527382B1 (ko) | 2016-06-21 | 2023-04-28 | 삼성전자주식회사 | 반도체 소자 |
FR3060840B1 (fr) | 2016-12-15 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes |
FR3060841B1 (fr) | 2016-12-15 | 2021-02-12 | Commissariat Energie Atomique | Procede de realisation d'un dispositif semi-conducteur a espaceurs internes auto-alignes |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3063191D1 (en) * | 1979-11-29 | 1983-06-16 | Tokyo Shibaura Electric Co | Method for manufacturing a semiconductor integrated circuit |
US5258635A (en) * | 1988-09-06 | 1993-11-02 | Kabushiki Kaisha Toshiba | MOS-type semiconductor integrated circuit device |
US5604368A (en) * | 1994-07-15 | 1997-02-18 | International Business Machines Corporation | Self-aligned double-gate MOSFET by selective lateral epitaxy |
US5773331A (en) * | 1996-12-17 | 1998-06-30 | International Business Machines Corporation | Method for making single and double gate field effect transistors with sidewall source-drain contacts |
JP2967477B2 (ja) * | 1997-11-26 | 1999-10-25 | 日本電気株式会社 | 半導体装置の製造方法 |
US6339002B1 (en) * | 1999-02-10 | 2002-01-15 | International Business Machines Corporation | Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts |
US6365465B1 (en) * | 1999-03-19 | 2002-04-02 | International Business Machines Corporation | Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques |
FR2799305B1 (fr) * | 1999-10-05 | 2004-06-18 | St Microelectronics Sa | Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu |
KR100730806B1 (ko) * | 1999-10-14 | 2007-06-20 | 신에쯔 한도타이 가부시키가이샤 | Soi웨이퍼의 제조방법 및 soi 웨이퍼 |
US6642115B1 (en) * | 2000-05-15 | 2003-11-04 | International Business Machines Corporation | Double-gate FET with planarized surfaces and self-aligned silicides |
TW490745B (en) * | 2000-05-15 | 2002-06-11 | Ibm | Self-aligned double gate MOSFET with separate gates |
WO2002023624A2 (en) * | 2000-09-14 | 2002-03-21 | Infineon Technologies North America Corp. | Field effect transistor and method of fabrication |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
FR2823010B1 (fr) * | 2001-04-02 | 2003-08-15 | St Microelectronics Sa | Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor |
KR100414217B1 (ko) * | 2001-04-12 | 2004-01-07 | 삼성전자주식회사 | 게이트 올 어라운드형 트랜지스터를 가진 반도체 장치 및그 형성 방법 |
US6960806B2 (en) * | 2001-06-21 | 2005-11-01 | International Business Machines Corporation | Double gated vertical transistor with different first and second gate materials |
US6967351B2 (en) * | 2001-12-04 | 2005-11-22 | International Business Machines Corporation | Finfet SRAM cell using low mobility plane for cell stability and method for forming |
US6580132B1 (en) * | 2002-04-10 | 2003-06-17 | International Business Machines Corporation | Damascene double-gate FET |
JP3793808B2 (ja) * | 2002-05-02 | 2006-07-05 | 国立大学法人東京工業大学 | 電界効果トランジスタの製造方法 |
JP2004119693A (ja) * | 2002-09-26 | 2004-04-15 | Tokyo Inst Of Technol | 強誘電体メモリデバイス及び強誘電体メモリデバイスの製造方法 |
JP2004128079A (ja) * | 2002-09-30 | 2004-04-22 | Speedfam Co Ltd | Soiウェハーのための多段局所ドライエッチング方法 |
KR100481209B1 (ko) * | 2002-10-01 | 2005-04-08 | 삼성전자주식회사 | 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
EP1519420A2 (en) * | 2003-09-25 | 2005-03-30 | Interuniversitaire Microelectronica Centrum vzw ( IMEC) | Multiple gate semiconductor device and method for forming same |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
-
2005
- 2005-01-31 US US11/047,448 patent/US7202117B2/en not_active Expired - Fee Related
- 2005-12-14 WO PCT/US2005/045202 patent/WO2006083401A2/en active Application Filing
- 2005-12-14 KR KR1020077017635A patent/KR20070100777A/ko not_active Application Discontinuation
- 2005-12-14 JP JP2007553098A patent/JP4965462B2/ja not_active Expired - Fee Related
- 2005-12-14 EP EP05854001A patent/EP1846945A2/en not_active Withdrawn
- 2005-12-14 CN CNB2005800440725A patent/CN100514547C/zh not_active Expired - Fee Related
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2006
- 2006-01-04 TW TW095100395A patent/TWI397128B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2006083401A3 (en) | 2007-06-14 |
EP1846945A2 (en) | 2007-10-24 |
TW200636869A (en) | 2006-10-16 |
TWI397128B (zh) | 2013-05-21 |
CN100514547C (zh) | 2009-07-15 |
CN101103437A (zh) | 2008-01-09 |
JP2008529301A (ja) | 2008-07-31 |
US20060172468A1 (en) | 2006-08-03 |
US7202117B2 (en) | 2007-04-10 |
KR20070100777A (ko) | 2007-10-11 |
WO2006083401A2 (en) | 2006-08-10 |
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