TWI396283B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI396283B TWI396283B TW097107630A TW97107630A TWI396283B TW I396283 B TWI396283 B TW I396283B TW 097107630 A TW097107630 A TW 097107630A TW 97107630 A TW97107630 A TW 97107630A TW I396283 B TWI396283 B TW I396283B
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 239000010410 layer Substances 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 10
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical group [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 2
- 150000005309 metal halides Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 12
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LCPPBVFBAXMXER-UHFFFAOYSA-N [Er].[Si] Chemical compound [Er].[Si] LCPPBVFBAXMXER-UHFFFAOYSA-N 0.000 description 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本發明係有關於一種半導體裝置和其製造方法,且特別係有關於一種形成電性接觸元件至基板上方凸起區的系統和其製造方法。
在改善電晶體性能且減少電晶體尺寸的歷程中,電晶體研發方向不再跟隨傳統平面電晶體的形式,以致於源極/汲極區域位於基板之中的形式,取代而之的是非平面電晶體,其中源極/汲極區域位於基板上方的鰭(fin)之中。如此非平面裝置是一種多閘極式鰭場效電晶體(multiple-gate FinFET)。於此最簡單形式中,多閘極式FinFET具有橫跨於似鰭(fin-like)矽本體之閘電極以形成一通道區域。有二個閘極,一個閘極位於此矽鰭(silicon fin)之每一側壁上。源極/汲極區域位於此鰭之中並遠離基板。
源極/汲極區域之電性接觸元件係跟隨傳統的佈局法則,使得形成此接觸元件以連接於似鰭矽本體之上表面的一部份。因此,從這個佈局法則中,接觸之寬度會小於或最多等於鰭之寬度。例如,裝置之接觸寬度為60nm,則此裝置之寬度必須大於或等於60nm。如果,接觸寬度必須超過位在通道區域上的鰭的寬度(例如,FinFET之寬度小於60nm),則位於源極/汲極區域的鰭的寬度必須擴大,以致於這些區域的鰭的寬度會大於接觸寬度。
然而,隨著此佈局法則,有很多問題會產生。問題之一例如為,當接觸面積的減少,接觸元件的接觸阻值會增加,因此,會限制裝置的驅動電流的改善。又,製造過程中這些接觸元件的誤對準會導致裝置和這些接觸元件間的接觸阻值的變化,於是導致不同裝置之間的阻值差異,並減少整體電路的產率。而且,矽化物的形成通常會在源極/汲極區域上會產生超淺接面(shallow junction),因而阻礙蕭特基阻障(Schottky barrier)高度的改善。
因此,亟需一種半導體裝置,包括新的接觸元件設計,用以減少接觸阻值,同時可於製造過程中減少接觸元件的誤對準。
為達成上述、其他與本發明之目的,本發明提供一種半導體裝置和其製造方法,以形成該些接觸元件結構於一非平面半導體裝置之源極/汲極區域。
本發明提供一種半導體裝置包括:一基板;一非平面電晶體,位於該基板上,該非平面電晶體包括位於一鰭凸出部之中的源極/汲極區域;一層間介電層,位於該非平面電晶體的上方;以及,複數個接觸元件,至少部分穿過該層間介電層,以形成與該源極/汲極區域的一電性接觸,並接觸該鰭的複數個表面。
本發明又提供一種半導體裝置包括:一基板;一導電區域,延伸於該基板的上方,該導電區域具有朝向並遠離該基板之一上表面和複數個側壁;一介電層,位於該導電區域的上方;以及,一接觸元件,延伸穿過該介電層至該導電區域,該接觸元件與該導電區域之上表面和至少二個側壁接觸。
另外,本發明提供一種半導體裝置包括:一基板;一鰭凸出部,位於該基板上;一層間介電層,位於該鰭的上方;以及,至少一接觸元件,穿過該層間介電層並與該鰭的複數個表面接觸。
本發明較佳實施例的優點之一在於減少源極/汲極區域和接觸元件間之接觸阻值,進而得到較佳的裝置性能。再者,因為接觸元件誤對準造成的接觸阻值之變化也可降低,而產生更均一化的產物,而且形成矽化物時不需要超淺接面,能進一步改善Schottky阻障的高度。
本發明較佳實施例的製造與使用的說明述詳如下,然而,可以理解的是,本發明提供許多可應用的發明概念,而此發明概念能夠以特定的內文廣泛地具體化。這些實施例僅以特定的方式使用圖式闡述本發明的製造與使用,但不用以限制本發明的範圍。
以下利用特定的實施例,亦即FinFET電晶體以敘述本發明。然而,本發明亦被應用於其他半導體裝置,特別係非平面裝置。本發明實施例可利用於例如:非平面電阻(non-planar resistors)、二極體(diodes)、電容(capacitors)、保險絲(fuses)和其他相似裝置。
請參考第1圖,此圖顯示較佳的絕緣體上覆蓋半導體(semiconductor-on-insulator,SOI)基板,亦可使用例如塊狀矽(bulk silicon)、應變SOI(strained SOI)、以及絕緣層上覆蓋鍺化矽(SiGe on insulator)的其他基板來取代。此較佳的絕緣層上覆蓋半導體基板包括一基板101,一絕緣層103,以及一半導體層105。此基板101較佳為矽。
此絕緣層103可形成自任一介電材料或絕緣材料,且較佳為包含二氧化矽或氮化矽或二者的組合之結構。此絕緣層103的厚度可介於100至3000之間,但使用更薄或更厚之介電層係亦可被理解的。
半導體層105可形成自例如矽的元素半導體、例如鍺化矽(silicon-germanium)的合金半導體、或者例如砷化鎵(gallium arsenide)或磷化銦(indium phosphide)的化合物半導體。此半導體層105較佳為矽。半導體層105的厚度可介於200至5000之間。另一實施例中,亦可使用例如塊狀矽基板之一塊狀半導體基板。此半導體層105較佳為一P型半導體,但其他實施例中可為一n型半導體。
第2圖顯示從半導體層105形成鰭201。此鰭201可藉由沈積例如光阻材料及/或硬遮罩的遮罩材料(mask material)(圖中未顯示)於半導體層105之上來形成。接著,將此遮罩材料圖案化並根據第2圖所示用來形成201的圖案,以蝕刻半導體層105。
第3圖顯示位於鰭201的上方形成閘極介電層301。此可藉由熱氧化(thermal oxidation)、化學氣相沈積法(chemical vapor deposition)、濺鍍(sputtering)或任一種用以形成閘極介電層的其他已知方式所形成。根據形成閘極介電層的技術,此閘極介電層301於鰭201上表面的厚度可以不同於鰭201側壁的厚度。
閘極介電層301可包含具有一厚度範圍介於約3至約100的材料,例如二氧化矽或氮氧化矽,較佳厚度為少於約10。此閘極介電層301亦可形成自一高介電常數(high-k)的材料(如相對的介電常數大於約5),例如氧化鑭(lanthanum oxide,La2
O3
)、氧化鋁(aluminum oxide,Al2
O3
)、氧化鉿(hafnium oxide,HfO2
)、氮氧化鉿(hafnium oxynitride,HfON)、氧化鋯(zirconium oxide,ZrO2
)或其組合,其具有等效氧化物厚度約3至約100,較佳為約10或更少。
第4圖顯示閘極電極層401的形成。此閘極電極層401包括一導電材料且可選擇自一群組,包括多晶矽(polycrystalline-silicon,poly-Si)、多晶鍺化矽(poly-crystalline silicon-germanium,poly-SiGe)、金屬氮化物(metallic nitrides)、金屬矽化物(metallic silicon)、金屬氧化物(metallic oxides)以及金屬。金屬氮化物舉例包括氮化鎢(tungsten nitride)、氮化鉬(molybdenum nitride)、氮化鈦(titanium nitride)以及氮化鉭(tantalum nitride)或其組合。金屬矽化物舉例包括矽化鎢(tungsten silicon)、矽化鈦(titanium silicon)、矽化鈷(cobalt silicon)、矽化鎳(nickel silicon)、矽化鉑(platinum silicon)、矽化鉺(erbium silicon)或其組合。金屬氧化物舉例包括氧化釕(ruthenium oxide)、氧化銦錫(indium tin oxide)或其組合。金屬舉例包括鎢(tungsten)、鈦(titanium)、鋁(aluminum)、銅(copper)、鉬(molybdenum)、鎳(nickel)、鉑(platinum)等。
沈積此閘極電極層401可藉由化學氣相沈積法、濺鍍或用以沈積導電材料的其他已知方式所形成。此閘極電極層401之厚度範圍可為約200至約4000。閘極電極層401之上表面通常為一非平面上表面,且可在閘極電極層401圖案化或蝕刻閘極之前進行平坦化。此時,離子可能會或可能不會被導入此閘極電極層401。例如,離子可藉由離子植入技術導入。
第5圖顯示閘極介電層301和閘極電極層401的圖案化以形成一閘極堆疊層501,並且定義出鰭的第一部分503,鰭的第二部分505,以及一通道區域507,位於閘極介電層301的下面鰭201之中。此閘極堆疊層501可藉由沈積和圖案化一閘極遮罩(圖中未顯示)於閘極電極層401上(請參考第4圖)來形成,例如使用習知的沈積和微影技術。此閘極遮罩包括通常使用之遮罩材料,包括(但不限於)光阻材料、二氧化矽、氮氧化矽、及/或氮化矽。可使用電漿蝕刻法(plasma etching)以蝕刻閘極電極層401和閘極介電層301而形成圖案化之閘極堆疊層501,如第5圖所示。
第6圖顯示經由形成間隙壁601,源極/汲極區域603,和矽化物接觸元件605而完成裝置600。此間隙壁601可形成於閘極堆疊層501相對之二側。間隙壁601典型地形成方式為,在之前形成的結構上以毯覆式沈積法(blanket depositing)形成一間隙壁層(圖中未顯示)。此間隙壁較佳為包括氮化矽、氮氧化物、碳化矽、氮氧化矽、氧化物和其他相似材料,且形成此層較佳方法例如化學氣相沈積法、電漿輔助化學氣相沈積法(plasma enhanced CVD)、濺鍍和其他習知技術。之後,圖案化此間隙壁601,較佳為以非等向性(anisotropically)蝕刻從此結構之水平面移除此間隙壁層。
源極/汲極區域603被形成於鰭的第一部分503和第二部分505上,利用植入適當的摻雜物以補充摻雜物於此鰭201之中。舉例來說,摻雜p型摻雜物,例如硼(boron)、鎵(gallium)、銦(indium),可形成PMOS裝置。另一實施例,摻雜n型摻雜物,例如磷(phosphorous)、砷(arsenic)、銻(antimony)可形成NMOS裝置。這些源極/汲極區域603的摻雜可使用閘極堆疊層501和閘極間隙壁601作為遮罩(mask)。值得注意的是,熟悉此技藝之人士可理解,可使用具他製程、步驟或類似的形成方法形成這些源極/汲極區域603。例如,熟悉此技藝之人士可理解,為了適用於特殊目的,可使用各種間隙壁及襯層的組合,來完成複數個摻雜(植入),以形成具有特定的形狀或特徵的源極/汲極區域。任何這些可能使用而形成這些源極/汲極區域603的製程和以上的描述,都不是用來限制本發明於上述的各種步驟。
較佳實施例之源極/汲極區域603的形成係以便減少後續接觸元件(請參考下面的第9A至9B圖以及第10A至10B圖)與源極/汲極區域603的Schottky阻障高度。例如,源極/汲極區域603之摻雜物係透過一分離植入法(segregated doping)摻雜的。另一實施例中,一超薄絕緣層(圖中未顯示)可形成於源極/汲極區域603的上方,並且摻雜物可穿透超薄絕緣層而摻雜。
另一實施例之源極/汲極區域603形成是以便於傳遞一應變(strain)於通道區域507之上。此實施例中,鰭201的第一部分503和第二部分505可透過一例如濕蝕刻的製程移除。接著,第一部分503和第二部分505可再成長以形成一應力物(stressor),而傳遞一應力於鰭201的通道區域507,其位在閘極堆疊層501之下面。在一較佳實施例中,鰭201包括矽而蝕刻鰭201的第一部分503和第二部分505的同時,利用閘極堆疊層501或間隙壁601以防止通道區域507被蝕刻。在移除鰭201的第一部分503和第二部分505之後,接著,這些部分可藉由具有例如鍺化矽之材料的選擇性磊晶(epitaxial)製程再成長,其中此材料具有不同於矽的一晶格常數。位於源極/汲極區域603及通道區域507的應力物材料(stressor material)之間的晶格失配(lattice mismatch),將傳遞一應力於通道區域507,以致於增加載子遷移率和裝置的整體性能。源極/汲極區域603之摻雜可透過上述討論的植入法,或作為材料成長之線上摻雜(in-situ doping)法。
源極/汲極區域603形成後,可視需要使用矽化物製程,以沿著鰭201之一或更多上表面和側壁形成矽化物接觸元件605,其中鰭201位於源極/汲極區域603的上方。這些矽化物接觸元件605較佳包括鎳,鈷,鉑,或鉺(erbium),用以減少接觸元件的Schottky阻障高度。然而,亦可使用例如鈦,鈀(palladium)及其他相似的常用金屬。習知技藝揭露,矽化製程(silicidation)可利用一適當金屬層毯覆式沈積(blanket deposition),接著,以一退火(annealing)步驟使此金屬與下面露出的矽反應。接著,移除未反應(un-reacted)金屬,較佳是使用一選擇性蝕刻製程來移除。這些矽化物接觸元件605較佳厚度範圍介於約5nm至約50nm之間。
可沿著源極/汲極區域603上的鰭201之一或更多上表面和側壁形成金屬層(圖中未顯示),來取代矽化物接觸元件。此金屬層較佳包括鋁,鎳,銅,或鎢,以降低此接觸元件的Schottky阻障高度。
第7圖為第6圖沿著7-7’切線之結構剖面圖,且繪示一視需要形成的接觸元件蝕刻停止層(CESL)701,其形成於裝置600上,用以保護後續製程期間的步驟。此CESL 701亦可作為一應力物(stressor),以在裝置600的通道區域507之中形成一應力。CESL 701較佳為氮化矽(silicon nitride)構成,亦可為其他材料如氮化物,氮氧化物,氮化硼(boron nitride)或其組合或相似材料。CESL 701可藉由化學氣相沈積法形成,厚度範圍介於約20nm至約200nm之間,較佳厚度為約80nm。然而,其他形成方式亦可使用。此CESL 701較佳傳遞一拉伸應變於NMOS裝置之鰭201的通道區域507且傳遞一壓縮應變於PMOS裝置之鰭201的通道區域507。
第8圖顯示形成一層間介電層(ILD)801於裝置600之上。為了清楚地說明,不顯示第7圖的CESL 701,並將矽化物接觸元件605和源極/汲極區域603合併成一區改以矽化物接觸元件605表示。此ILD801的形成可藉由化學氣相沈積法、濺鍍或其他已知方法。ILD801典型地有一平坦的表面,且可包括二氧化矽,也可使用例如高介電常數之其他介電材料。ILD 801的形成是用來傳遞一應變於鰭201之通道區域507,以增加裝置600的整體性能。
第9A圖顯示經由ILD 801而形成接觸元件901至矽化物接觸元件605。接觸元件901係依照已知的微影及蝕刻技術形成於ILD 801之中。一般微影技術包括沈積(deposit)遮罩用之一光阻材料、曝光(expose)、以及顯影(develop)已露出ILD 801欲移除的部分。留下的光阻材料會保護下方的材料,以避免後續製程步驟例如蝕刻受損。較佳實施例之光阻材料用來圖案化遮罩(mask),以被定義接觸元件901。遮罩被圖案化後,接著,形成寬度比鰭201寬之開口,亦可使用例如硬遮罩(hardmask)之額外遮罩。
蝕刻製程可為一非等向性(anisotropic)或等向性(isotropic)蝕刻,但較佳為一非等向性乾蝕刻。在一較佳實施例中,此蝕刻製程持續至鰭201的一上表面903,包括源極/汲極603和鰭201側壁的至少一部份暴露出來,藉以露出鰭201之至少三個表面(上表面部分和至少二個側壁部分)。
接著,形成接觸元件901以便與鰭201露出的表面接觸。此實施例中,形成每一接觸元件901以與鰭201之複數個表面接觸。在一較佳實施例中,形成接觸元件901以與鰭201之至少三個表面接觸,但亦可接觸更多或更少的表面。與只有接觸鰭201上表面之接觸元件相比,可允許矽化物接觸元件605和接觸元件901之間有更大的接觸面積。因此,可降低裝置之接觸阻值。此實施例亦具有減少因接觸元件901誤對準造成的接觸阻值變化的優點,這是因為當接觸元件901寬度大於鰭201時,會有一更大的裕度來應對此接觸阻值之變化。
接觸元件901可包括一阻障/黏合層(barrier/adhesion layer)(圖中未顯示)以避免擴散以及提供接觸元件901和ILD 801之間較好的黏合。在一實施例中,此阻障層是由一或更多層之鈦(titanium),氮化鈦,鉭(tantalum),氮化鉭或其相似元素形成。此阻障層較佳是以化學氣相沈積法(CVD)形成,然而也可用其他技術來取代CVD。此阻障層形成之較佳的結合厚度範圍介於約50至約500。
接觸元件901可由任一適合導電材料,例如高導電(highly-conductive)、低阻值材料(low-resistive metal)、元素金屬(elemental metal)、過渡金屬(transition metal),或其他相似材料組成。在一具體實施例中,接觸元件901係由鎢構成,也可使用例如銅的其他材料來取代鎢。在一實施例中,是以鎢形成接觸元件901,且可使用習知的CVD技術以沈積接觸元件901,亦可使用其他任一種形成方式來取代CVD。
第9B圖顯示由前述第9A圖所述的製程形成的裝置600之上視圖。值得注意的是,在此實施例中,接觸元件901形成比之前的接觸元件具有一較大之接觸面積。另外,在接觸元件區域上之鰭201的寬度可小於接觸元件901,且接觸元件901區域上之鰭201不需加寬以符合設計法則。
第10A圖顯示另一實施例,其中接觸元件901與鰭201的複數個側壁接觸。然而,在此實施例之中,形成接觸元件901不僅是與鰭201的上表面和至少二個側壁接觸,而是與鰭201的上表面和至少三個側壁接觸。在此實施例之中,形成開口的蝕刻步驟是接觸元件901持續越過鰭201的上表面903,直到鰭201的至少三個側壁部分實質地暴露,且可能直到絕緣層103的至少一部分亦實質地暴露。因此,當接觸元件901的材料沈積或其他材料形成於開孔之中,形成的接觸元件901會與鰭201的至少四個表面接觸,包括鰭201的上表面和至少三個側壁。
第10B圖顯示根據前述第10A圖繪示之實施例的上視圖。如先前所述,接觸元件901是與鰭201的至少四個表面接觸,允許接觸元件901和矽化物接觸元件605之間具有較大的接觸元件面積。此較大的接觸元件面積將允許鰭201的寬度縮短,用以防止接觸阻值因為隨著接觸元件面積的減少而增加。
本發明較佳實施例中,形成多側壁的接觸元件901於裝置600之上,其中包括一應變通道區域(strained channel region)或源極/汲極區域603和接觸元件901之間較低的Schottky阻障高度或二者皆含。減少Schottky阻障高度之較佳方法可以參考第6圖所述。此應變通道區域的形成是透過一適當之應變製程,較佳包括一或更多的前述的應變製程。這些製程較佳包括SiGe源極/汲極磊晶(epitaxial)成長(請參考第6圖描述),CESL(請參考第7圖描述),以及ILD(請參考第8圖描述)。
為達本發明之目的以及優點,本發明較佳實施例已詳述之。本發明較佳實施例的揭露並非用以限定本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做更動與潤事,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。例如,有許多種用以形成此結構材料的沈積方式。只要係根據本發明實施例所描述而可得到實質相同結果之任一沈積方式均可被使用。
101...基板
103...絕緣層
201...鰭
301...閘極介電層
401...閘極電極層
501...閘極堆疊層
503...鰭的第一部分
505...鰭的第二部分
507...通道區域
600...裝置
601...閘極間隙壁
603...源極/汲極區域
605...矽化物接觸元件
701...接觸元件蝕刻停止層
801...層間介電層
901...接觸元件
903...鰭的上表面
第1至8圖顯示根據本發明實施例之形成接觸元件之中間步驟;第9A和9B圖分別繪示根據本發明實施例之接觸元件的立體圖和上視圖,其中接觸元件為用於鰭的複數個表面,而鰭包括源極/汲極區域。
第10A和10B圖分別繪示根據本發明另一實施例之接觸元件的立體圖和上視圖,其中接觸元件為用於鰭的一上表面和三個側壁,而鰭包括源極/汲極區域。
101...基板
103...絕緣層
501...閘極堆疊層
503...鰭的第一部分
505...鰭的第二部分
507...通道區域
600...裝置
601...閘極間隙壁
605...矽化物接觸元件
Claims (17)
- 一種半導體裝置,包括:一基板;一非平面電晶體,位於該基板上,該非平面電晶體包括位於一鰭之中的源極/汲極區域,其中該鰭具有複數個表面,且包括具有第一晶格常數之一第一區域與一第二區域,及具有第二晶格常數之一第三區域,該第三域區插入於該第一區域和該第二區域之間,該第一區域和該第二區域含有該源極/汲極區域;一層間介電層,位於該非平面電晶體的上方;以及複數個接觸元件,至少部分穿過該層間介電層,以形成與該源極/汲極區域的一電性接觸,並接觸該鰭的至少兩個表面。
- 如申請專利範圍第1項所述之半導體裝置,其中該些接觸元件與至少該鰭的三個表面接觸。
- 如申請專利範圍第1項所述之半導體裝置,其中該些接觸元件與至少該鰭的四個表面接觸。
- 如申請專利範圍第1項所述之半導體裝置,其中該非平面電晶體具有一通道區域,位於該源極/汲極區域之間,該通道區域因層間介電層而應變。
- 如申請專利範圍第1項所述之半導體裝置,其中該非平面電晶體具有一通道區域,位於該源極/汲極區域之間,該通道區域因該非平面電晶體上的一接觸元件蝕刻停止層而應變。
- 如申請專利範圍第1項所述之半導體裝置,更包括一金屬層至少部分位於該源極/汲極區域和該些接觸元件之間。
- 一種半導體裝置,包括:一基板;一導電區域,延伸於該基板的上方,該導電區域具有朝向並遠離該基板的一上表面和複數個側壁,且該導電區域更包括一第一部分、一第二部分、和一第三部分插入該第一部分和該第二部分之間,該第三部分具有一不同於該第一部分和該第二部分的晶格常數及導電率;一介電層,位於該導電區域的上方;以及一接觸元件,延伸穿過該介電層至該導電區域,該接觸元件與該導電區域的上表面和至少二個側壁接觸。
- 如申請專利範圍第7項所述之半導體裝置,其中該接觸元件與至少該導電區域的三個側壁接觸。
- 如申請專利範圍第7項所述之半導體裝置,其中至少一部分的該導電區域因一接觸元件蝕刻停止層而應變。
- 如申請專利範圍第7項所述之半導體裝置,其中至少一部分的該導電區域因該介電層而應變。
- 如申請專利範圍第7項所述之半導體裝置,其中該介電層傳遞一應力於該第三部分上。
- 如申請專利範圍第7項所述之半導體裝置,更包括矽化物區域,位於該導電區域和該接觸元件之間。
- 一種半導體裝置,包括:一基板;一鰭凸出部,位於該基板上,其中該鰭包含:一第一部分,包括具有一第一晶格常數之一第一材料;一第二部分,鄰接於該第一部分,該第二部分包括具有一第二晶格常數之一第二材料,該第二晶格常數不同於該第一晶格常數;一第三部分,鄰接於該第二部分且相對於該第一部分的位置,該第三部分包括具有一第三晶格常數之一第三材料,該第三晶格常數不同於該第一晶格常數及該第二晶格常數;一層間介電層,位於該鰭的上方;以及至少一接觸元件,穿過該層間介電層並與該鰭的複數個表面接觸。
- 如申請專利範圍第13項所述之半導體裝置,該接觸元件與至少該鰭的四個表面接觸。
- 如申請專利範圍第13項所述之半導體裝置,更包括一接觸元件蝕刻停止層,位於該鰭的上方,其中該接觸元件蝕刻停止層施加一應力於該鰭的一部分上。
- 如申請專利範圍第13項所述之半導體裝置,其中該層間介電層施加一應力於該鰭的一部分上。
- 如申請專利範圍第13項所述之半導體裝置,更包括一金屬矽化物,至少部份位於該鰭與該接觸元件之間。
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