TWI392120B - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
TWI392120B
TWI392120B TW097111190A TW97111190A TWI392120B TW I392120 B TWI392120 B TW I392120B TW 097111190 A TW097111190 A TW 097111190A TW 97111190 A TW97111190 A TW 97111190A TW I392120 B TWI392120 B TW I392120B
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semiconductor light
emitting device
die
extending
electrode
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TW097111190A
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TW200849675A (en
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Yasushi Tanaka
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Rohm Co Ltd
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description

半導體發光裝置
本發明，例如係有關於作為行動電話之光源而被使用的半導體發光裝置。又，本發明，係有關於此種半導體發光裝置之製造方法。
圖5，係展示有先前技術之半導體發光裝置的其中一例(例如，參考專利文獻1)。於同圖中所示之半導體發光裝置X，係為在被形成有一對之電極92A、92B的基板91上，被晶粒接著有LED晶片93之構成。LED晶片93以及焊接導線94，係經由樹脂封裝95而被包覆。電極92A，係包含有晶粒接著墊片92Aa。LED晶片93，係經由銀糊96，而被晶粒接著於晶粒接著墊片92Aa之上。電極92B，係包含有用以將焊接導線94作焊接之晶粒接著墊片92Ba。
近年來，例如係強烈地追求有行動電話之小型化或是薄型化。故而，對於身為行動電話之構成構件的半導體發光裝置，其薄型化之要求係為強烈。作為在半導體發光裝置X中而達成薄型化的其中一種策略，係可考慮有將LED晶片93變薄的方法。然而，若是欲將變薄的LED晶片93晶粒接著在晶粒接著墊片92Aa上，則會有銀糊96流動到LED晶片93之上的危險。此種事態，會造成使電極92A與焊接導線94成為短路之問題。
〔專利文獻1〕日本特開2001-196641號公報
本發明，係有鑑於上述之事態而考案者。於此，本發明，係以提供一種適合於薄型化之達成的半導體發光裝置為課題。
藉由本發明所提供之半導體發光裝置，係具備有基板、和被形成於上述基板之電極、和在被包含於上述電極中之晶粒接著墊片上，經由導電性糊而被晶粒接著(die bonding)的半導體發光元件。上述晶粒接著墊片，當從上述基板之厚度方向視之時，其外緣係較上述半導體發光元件之外緣而位置在更內側。又，上述電極，係更進而具備有從上述晶粒接著墊片而延伸至上述半導體發光元件之外側的延伸部。
若藉由此種構成，則上述導電性糊之大部分，係成為存在於被上述晶粒接著墊片與上述半導體發光元件所挾持之空間中。由於上述晶粒接著墊片係並不具備有從上述半導體發光元件而溢出的部分，因此，係成為能夠抑制上述導電性糊從上述晶粒接著墊片而溢出的狀況。又，就算是在上述導電性糊之量為多時，多餘之上述導電性糊，亦會沿著上述延伸部而擴散。故而，能夠防止上述導電性糊流動至上述半導體發光元件之上面的事態。因此，係成為能夠將上述半導體發光元件設為較薄者，而能夠達成上述半導體發光裝置之薄型化。
較理想之狀況，上述半導體發光元件，係為矩形狀上述延伸部，係在上述半導體發光元件之對角線方向上作延伸，且，具備有連接於上述晶粒接著墊片之帶狀部、和位置於較此帶狀部為更前端側，而被設為較上述帶狀部之寬幅為更廣幅的廣幅部。若藉由此種構成，則就算是上述導電性糊從上述半導體發光元件而溢出，此上述導電性糊，亦係成為從上述半導體發光元件之角部，而朝向上述延伸部溢出。故而，能夠防止上述導電性糊沿著上述半導體發光元件之側面而流動至上面的事態。又，若藉由上述構成，則能夠使沿著上述延伸部而溢出之上述導電性糊滯留在前述廣幅部處。此點，在避免由於溢出之上述導電性糊沿著上述基板而更加擴散並引起短路等之事態上，係為有利。
較理想之狀況，上述導電性糊之厚度，和上述半導體發光元件之厚度，其兩者之比，係成為1：5~1：15。若藉由此種構成，則能夠抑制上述導電性糊之流動至上方，同時，成為能夠採用足夠薄而足以達成上述半導體發光裝置之薄型化者作為上述半導體發光元件。
本發明之其他特徵以及優點，藉由對所添附之圖面作參考並於以下進行詳細之說明，應可更為明朗。
圖1~圖3，係為展示根據本發明之第1實施例的半導體發光裝置。圖示之半導體發光裝置A1，係具備有基 板1；和1對之電極2A、2B；和LED晶片3；和焊接導線4；以及樹脂封裝5。在圖1中，為了易於理解，係藉由想像線來展示樹脂封裝5。半導體發光裝置A1，其寬幅係為0.6mm，長度係為1.0mm，厚度係為0.2mm左右，而係為小型且非常之薄型。
基板1，平面視之係為略矩形狀。而係為例如由玻璃環氧樹脂所成之絕緣基板。在基板1之表面，係被搭載有LED晶片3。基板1之背面，係為當在電路基板上將半導體發光裝置A1作面安裝時所使用的安裝面。在基板1之4角隅，係被形成有沿著基板1之厚度方向(圖2之上下方向)而延伸的凹溝。基板1之厚度，例如係為0.08~0.1mm左右。
1對之電極2A、2B，係挾持著基板1之中央部分，而分別被分離配置於基板1之兩端緣處。電極2A、2B，係分別從基板1之表面並經過上述凹溝而延伸至背面。各電極2A、2B中之覆蓋基板1之背面的部分，係作為用以將半導體發光裝置A1作面安裝的安裝端子而使用。1對之電極2A、2B，例如係成為層積由Cu/Ni/Au所成之各電鍍層而成的構造。
於電極2A，係被形成有晶粒接著墊片2Aa以及4個的延伸部21。晶粒接著墊片2Aa，係為用以將LED晶片3使用銀糊6來作晶粒接著的部分，並成為略正方形形狀。晶粒接著墊片2Aa，其中心係與LED晶片3之中心成為略一致，其尺寸係較LED晶片3之尺寸為更小。藉由此， 當從基板1之厚度方向視之時，晶粒接著墊片2Aa之外緣，係較LED晶片3之外緣而位置在更內側(參考圖1)。
延伸部21，係從晶粒接著墊片2Aa而朝向LED晶片3之對角線方向延伸，並具備有帶狀部21a以及廣幅部21b。。帶狀部21a，係被連接於晶粒接著墊片2Aa，其寬幅係成為略一定。廣幅部21b，係被形成於延伸部21之前端，其最大寬幅，係成為較帶狀部21a之寬幅為更大。在圖所示之例中，廣幅部21b雖係為菱形狀，但是，亦可為圓形狀等之其他形狀。
於電極2B，係被形成有晶粒接著墊片2Ba。晶粒接著墊片2Ba，係為用以將焊接導線4作焊接之部分。
LED晶片3，係為半導體發光裝置A1之光源，而例如係成為可發出可視光的構成。具體而言，LED晶片3，例如係為pn型之半導體發光元件，被形成於底面之n側電極(省略圖示)，係經由銀糊6而與電極2A導通。又，被形成於LED晶片3之上面的p側電極(省略圖示)，係經由焊接導線4而與電極2B導通。LED晶片3，係成為矩形狀。
如圖3所示一般，晶粒接著墊片2Aa與LED晶片3，例如係經由銀糊6而被接合。銀糊6之厚度t1與LED晶片3之厚度t2，係設為1：5~1：15的範圍內。例如，相對於厚度t1係為5~7μm，厚度t2係被設為40~75μm左右。
樹脂封裝5，係為用以保護LED晶片3以及焊接導線4者。樹脂封裝5，係使用對於從LED晶片3而來之光而具備有透光性的樹脂(例如環氧樹脂)而被單體成形。另外，作為樹脂封裝5，係並不被限定為其全體均為具備有透光性的材質所成者，例如，亦可為具備有將從LED晶片3而朝向側方所發射之光作反射並使其朝向基板1之厚度方向而前進的反射器之構成。
接下來，針對半導體發光裝置A1之作用作說明。
若藉由上述第1實施例，則如圖3所示一般，銀糊6之大部分，係成為存在於被晶粒接著墊片2Aa與LED晶片3所挾持之空間中。由於晶粒接著墊片2Aa係並不具備有從LED晶片3而溢出的部分，因此，係成為能夠抑制銀糊6從LED晶片3而溢出的狀況。又，就算是在銀糊6之量為多時，多餘之銀糊6，亦會如圖1所示一般，沿著延伸部21而擴散。故而，能夠防止銀糊6從LED晶片3之側面而流動至上方，而附著在被連接於上面之焊接導線4處的事態。因此，係成為能夠作為LED晶片3而使用較薄者，而能夠達成半導體發光裝置A1之薄型化。
又，就算是銀糊6從LED晶片3而溢出，此銀糊6，亦係成為從LED晶片3之角部，而朝向延伸部21溢出。故而，能夠防止銀糊6沿著LED晶片3之側面而流動至上面的事態。又，能夠使沿著延伸部21而溢出之銀糊6滯留在廣幅部21b處。此點，在避免溢出之銀糊6沿著基板1而到達電極2B處一事上，係為適合。
進而，藉由將銀糊6之厚度t1與LED晶片3之厚度t2的比設為1：5~1：15的範圍內，在能夠抑制銀糊6之流動至上方的事態之同時，作為LED晶片3，亦可採用為了達成半導體發光裝置A1之薄型化而為充分薄者。另外，若是厚度t1、t2之比為較1：5更小，則銀糊6流動至LED晶片3之上面的可能性係變大。另一方面，若是厚度t1、t2之比為較1：15更大，則銀糊6之厚度在為了將LED晶片3作適切的晶粒接著上，係成為不足。或者是，LED晶片3之厚度係變的過大，而變得無法達成半導體發光裝置A1之薄型化。
圖4，係為展示根據本發明之第2實施例的半導體發光裝置。另外，在本圖中，對於與上述第1實施例相同又或是類似的要素，係附加相同之符號。
圖示之半導體發光裝置A2，與上述第1實施例相異處，係在於在電極2A處設置有2個的延伸部21之點。此些之延伸部21，係沿著LED晶片3之其中一方的對角線方向而延伸。就算是藉由此種構成，亦能夠適切地防止銀糊6流動至上方，而能夠達成半導體發光裝置A2之薄型化。
1‧‧‧基板
2A‧‧‧電極
2Aa‧‧‧晶粒接著墊片
2B‧‧‧電極
2Ba‧‧‧晶粒接著墊片
3‧‧‧LED晶片
4‧‧‧焊接導線
5‧‧‧樹脂封裝
6‧‧‧銀糊
21‧‧‧延伸部
21a‧‧‧帶狀部
2lb‧‧‧廣幅部
91‧‧‧基板
92A‧‧‧電極
92Aa‧‧‧晶粒接著墊片
92B‧‧‧電極
92Ba‧‧‧晶粒接著墊片
93‧‧‧LED晶片
94‧‧‧焊接導線
95‧‧‧樹脂封裝
96‧‧‧銀糊
Al‧‧‧半導體發光裝置
A2‧‧‧半導體發光裝置
〔圖l〕展示根據本發明之第1實施例的半導體發光裝置之平面圖。
〔圖2〕沿著圖1之II－II線的剖面圖。
〔圖3〕展示上述第l實施例之半導體發光裝置的重要部分之剖面圖。
〔圖4〕展示根據本發明之第2實施例的半導體發光裝置之平面圖。
〔圖5〕展示先前技術之半導體發光裝置的其中一例之平面圖。
1‧‧‧基板
2A‧‧‧電極
2Aa‧‧‧晶粒接著墊片
2B‧‧‧電極
2Ba‧‧‧晶粒接著墊片
3‧‧‧LED晶片
4‧‧‧焊接導線
5‧‧‧樹脂封裝
6‧‧‧銀糊
21‧‧‧延伸部
21a‧‧‧帶狀部
21b‧‧‧廣幅部
A1‧‧‧半導體發光裝置

Claims (11)

  1. 一種半導體發光裝置，係具備有基板、和被形成於上述基板之電極、和在被形成於上述電極之晶粒接著墊片上，使用導電性糊而被晶粒接著(die bonding)的半導體發光元件，並且該半導體發光元件係具備有複數之角，該半導體發光裝置，其特徵為：上述晶粒接著墊片，當從上述基板之厚度方向視之時，其外緣係較上述半導體發光元件之外緣而位置於更內側，上述電極，係更進而具備有從上述晶粒接著墊片而延伸出至上述半導體發光元件之外側的延伸部，上述延伸部，係在上述半導體發光元件之對角線上作延伸，上述半導體發光元件處之上述複數之角的至少1個，係位置於上述延伸部上。
  2. 如申請專利範圍第1項所記載之半導體發光裝置，其中，上述半導體發光元件，係為矩形狀，上述延伸部，係具備有連接於上述晶粒接著墊片之帶狀部、和位置於較此帶狀部為更前端側，而被設為較上述帶狀部之寬幅為更廣幅的廣幅部。
  3. 如申請專利範圍第1項所記載之半導體發光裝置，其中，上述導電性糊之厚度，和上述半導體發光元件之厚度，其兩者之比，係成為1：5~1：15。
  4. 如申請專利範圍第1項所記載之半導體發光裝置，其中，上述延伸部，係由從上述晶粒接著墊片所延伸出之4個延伸部所成，該些延伸部之各個，係與上述半導體發光元件之複數之角的1個相對應。
  5. 如申請專利範圍第4項所記載之半導體發光裝置，其中，在上述電極處，係被形成有位於上述4個延伸部中之2個延伸部之間的穿孔。
  6. 如申請專利範圍第1項所記載之半導體發光裝置，其中，上述延伸部，係由從上述晶粒接著墊片所延伸出之2個延伸部所成，該些延伸部之各個，係與上述半導體發光元件之被配置在互為對角之位置處的複數之角的1個相對應。
  7. 如申請專利範圍第2項所記載之半導體發光裝置，其中，上述廣幅部，係為菱形或者是圓形。
  8. 如申請專利範圍第1項所記載之半導體發光裝置，其中，上述電極，係具備著包含有Cu電鍍層、Ni電鍍層以及Au電鍍層之層積構造。
  9. 如申請專利範圍第3項所記載之半導體發光裝置，其中，上述導電性糊之厚度，係為5~7μm，上述半導體發光元件之厚度，係為40~75μm。
  10. 如申請專利範圍第1項所記載之半導體發光裝置 ，其中，上述晶粒接著墊片，係為略正方形，上述延伸部，係從上述晶粒接著墊片之角部而延伸。
  11. 如申請專利範圍第2項所記載之半導體發光裝置，其中，於上述電極處，上述廣幅部係為僅與上述帶狀部作連接之末端部。
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