TWI391787B - 在193nm照射波長下具有低折射率之頂層抗反射塗佈組成物 - Google Patents

在193nm照射波長下具有低折射率之頂層抗反射塗佈組成物 Download PDF

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Publication number
TWI391787B
TWI391787B TW095137325A TW95137325A TWI391787B TW I391787 B TWI391787 B TW I391787B TW 095137325 A TW095137325 A TW 095137325A TW 95137325 A TW95137325 A TW 95137325A TW I391787 B TWI391787 B TW I391787B
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TW
Taiwan
Prior art keywords
polymer
composition
group
moiety
aromatic moiety
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Application number
TW095137325A
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English (en)
Chinese (zh)
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TW200734823A (en
Inventor
Wu-Song S Huang
William H Heath
Kaushal S Patel
Pushkara R Varanasi
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Ibm
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Publication of TW200734823A publication Critical patent/TW200734823A/zh
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Publication of TWI391787B publication Critical patent/TWI391787B/zh

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist
    • Y10S438/952Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
TW095137325A 2005-10-13 2006-10-11 在193nm照射波長下具有低折射率之頂層抗反射塗佈組成物 TWI391787B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/249,693 US7544750B2 (en) 2005-10-13 2005-10-13 Top antireflective coating composition with low refractive index at 193nm radiation wavelength

Publications (2)

Publication Number Publication Date
TW200734823A TW200734823A (en) 2007-09-16
TWI391787B true TWI391787B (zh) 2013-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137325A TWI391787B (zh) 2005-10-13 2006-10-11 在193nm照射波長下具有低折射率之頂層抗反射塗佈組成物

Country Status (9)

Country Link
US (1) US7544750B2 (enExample)
EP (1) EP1934654B1 (enExample)
JP (2) JP4866912B2 (enExample)
KR (1) KR101054729B1 (enExample)
CN (1) CN101288029B (enExample)
AT (1) ATE456076T1 (enExample)
DE (1) DE602006011927D1 (enExample)
TW (1) TWI391787B (enExample)
WO (1) WO2007042348A1 (enExample)

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US20070122741A1 (en) * 2005-11-29 2007-05-31 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
KR101096954B1 (ko) * 2006-01-31 2011-12-20 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 보호막 재료 및 패턴 형성 방법
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP4888655B2 (ja) * 2006-08-11 2012-02-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5162934B2 (ja) * 2007-03-23 2013-03-13 Jsr株式会社 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP5229228B2 (ja) * 2007-09-26 2013-07-03 Jsr株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Jsr株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
JP5382321B2 (ja) * 2009-03-31 2014-01-08 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
WO2022196485A1 (ja) * 2021-03-19 2022-09-22 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物

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EP0723677B1 (en) * 1993-10-12 2000-03-22 Clariant Finance (BVI) Limited Top anti-reflective coating films
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
EP1542078A1 (en) * 2002-07-04 2005-06-15 AZ Electronic Materials (Japan) K.K. Composition for antireflection coating and method for forming pattern

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JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
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EP0723677B1 (en) * 1993-10-12 2000-03-22 Clariant Finance (BVI) Limited Top anti-reflective coating films
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
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Also Published As

Publication number Publication date
CN101288029A (zh) 2008-10-15
EP1934654B1 (en) 2010-01-20
US7544750B2 (en) 2009-06-09
ATE456076T1 (de) 2010-02-15
CN101288029B (zh) 2012-05-30
WO2007042348A1 (en) 2007-04-19
KR20080063302A (ko) 2008-07-03
US20070087285A1 (en) 2007-04-19
TW200734823A (en) 2007-09-16
DE602006011927D1 (de) 2010-03-11
KR101054729B1 (ko) 2011-08-05
JP4866912B2 (ja) 2012-02-01
JP2009511969A (ja) 2009-03-19
EP1934654A1 (en) 2008-06-25
JP2012008586A (ja) 2012-01-12
JP5182830B2 (ja) 2013-04-17

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