KR101054729B1 - 193 ㎚의 방사선 파장에서 굴절률이 낮은 상부 반사방지코팅 조성물 - Google Patents

193 ㎚의 방사선 파장에서 굴절률이 낮은 상부 반사방지코팅 조성물 Download PDF

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Publication number
KR101054729B1
KR101054729B1 KR1020087008448A KR20087008448A KR101054729B1 KR 101054729 B1 KR101054729 B1 KR 101054729B1 KR 1020087008448 A KR1020087008448 A KR 1020087008448A KR 20087008448 A KR20087008448 A KR 20087008448A KR 101054729 B1 KR101054729 B1 KR 101054729B1
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South Korea
Prior art keywords
moiety
polymer
composition
aromatic
radiation
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KR1020087008448A
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English (en)
Korean (ko)
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KR20080063302A (ko
Inventor
우-송 황
윌리엄 헤스
카우샬 파텔
푸쉬카라 바라나시
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인터내셔널 비지네스 머신즈 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
KR1020087008448A 2005-10-13 2006-08-31 193 ㎚의 방사선 파장에서 굴절률이 낮은 상부 반사방지코팅 조성물 Expired - Fee Related KR101054729B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/249,693 2005-10-13
US11/249,693 US7544750B2 (en) 2005-10-13 2005-10-13 Top antireflective coating composition with low refractive index at 193nm radiation wavelength
PCT/EP2006/065877 WO2007042348A1 (en) 2005-10-13 2006-08-31 Top antireflective coating composition with low refractive index at 193nm radiation wavelength

Publications (2)

Publication Number Publication Date
KR20080063302A KR20080063302A (ko) 2008-07-03
KR101054729B1 true KR101054729B1 (ko) 2011-08-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087008448A Expired - Fee Related KR101054729B1 (ko) 2005-10-13 2006-08-31 193 ㎚의 방사선 파장에서 굴절률이 낮은 상부 반사방지코팅 조성물

Country Status (9)

Country Link
US (1) US7544750B2 (enExample)
EP (1) EP1934654B1 (enExample)
JP (2) JP4866912B2 (enExample)
KR (1) KR101054729B1 (enExample)
CN (1) CN101288029B (enExample)
AT (1) ATE456076T1 (enExample)
DE (1) DE602006011927D1 (enExample)
TW (1) TWI391787B (enExample)
WO (1) WO2007042348A1 (enExample)

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US20070122741A1 (en) * 2005-11-29 2007-05-31 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
KR101096954B1 (ko) * 2006-01-31 2011-12-20 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 보호막 재료 및 패턴 형성 방법
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP4888655B2 (ja) * 2006-08-11 2012-02-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5162934B2 (ja) * 2007-03-23 2013-03-13 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP5229228B2 (ja) * 2007-09-26 2013-07-03 Ｊｓｒ株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
JP5382321B2 (ja) * 2009-03-31 2014-01-08 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
WO2022196485A1 (ja) * 2021-03-19 2022-09-22 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物

Citations (4)

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US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
JPH11124531A (ja) 1997-10-24 1999-05-11 Asahi Glass Co Ltd コーティング組成物
US6057080A (en) * 1991-06-28 2000-05-02 International Business Machines Corporation Top antireflective coating film
JP2002530696A (ja) * 1998-11-18 2002-09-17 クラリアント・インターナシヨナル・リミテッド 深紫外線フォトレジスト用の反射防止膜用コーティング組成物

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SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
TW357395B (en) * 1996-03-07 1999-05-01 Clariant Finance Bvi Ltd Light-absorbing antireflective layers with improved performance due to refractive index optimization
US6274295B1 (en) * 1997-03-06 2001-08-14 Clariant Finance (Bvi) Limited Light-absorbing antireflective layers with improved performance due to refractive index optimization
US5994007A (en) * 1997-12-19 1999-11-30 Kabushiki Kaisha Toshiba Pattern forming method utilizing first insulative and then conductive overlayer and underlayer
JP3673399B2 (ja) * 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
US6251562B1 (en) * 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
JP3851594B2 (ja) * 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
KR100586541B1 (ko) * 2003-07-16 2006-06-07 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
KR100586542B1 (ko) * 2003-07-31 2006-06-07 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조 방법 및 이를포함하는 반사방지막 조성물
US7223517B2 (en) * 2003-08-05 2007-05-29 International Business Machines Corporation Lithographic antireflective hardmask compositions and uses thereof
US7172849B2 (en) * 2003-08-22 2007-02-06 International Business Machines Corporation Antireflective hardmask and uses thereof
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
US7335456B2 (en) * 2004-05-27 2008-02-26 International Business Machines Corporation Top coat material and use thereof in lithography processes
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4520245B2 (ja) * 2004-08-17 2010-08-04 セントラル硝子株式会社 リソグラフィー用トップコート膜の製造方法
EP1806370B1 (en) * 2004-09-30 2013-05-22 JSR Corporation Copolymer and upper film-forming composition
US7709182B2 (en) * 2004-12-03 2010-05-04 Jsr Corporation Composition for forming antireflection film, layered product, and method of forming resist pattern
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
US7375172B2 (en) * 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures

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Publication number Priority date Publication date Assignee Title
US6057080A (en) * 1991-06-28 2000-05-02 International Business Machines Corporation Top antireflective coating film
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
JPH11124531A (ja) 1997-10-24 1999-05-11 Asahi Glass Co Ltd コーティング組成物
JP2002530696A (ja) * 1998-11-18 2002-09-17 クラリアント・インターナシヨナル・リミテッド 深紫外線フォトレジスト用の反射防止膜用コーティング組成物

Also Published As

Publication number Publication date
CN101288029A (zh) 2008-10-15
EP1934654B1 (en) 2010-01-20
US7544750B2 (en) 2009-06-09
ATE456076T1 (de) 2010-02-15
CN101288029B (zh) 2012-05-30
WO2007042348A1 (en) 2007-04-19
KR20080063302A (ko) 2008-07-03
US20070087285A1 (en) 2007-04-19
TW200734823A (en) 2007-09-16
DE602006011927D1 (de) 2010-03-11
JP4866912B2 (ja) 2012-02-01
JP2009511969A (ja) 2009-03-19
EP1934654A1 (en) 2008-06-25
JP2012008586A (ja) 2012-01-12
JP5182830B2 (ja) 2013-04-17
TWI391787B (zh) 2013-04-01

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