CN101288029B - 在193纳米辐射波长具有低折射率的顶部抗反射涂料组合物 - Google Patents

在193纳米辐射波长具有低折射率的顶部抗反射涂料组合物 Download PDF

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Publication number
CN101288029B
CN101288029B CN2006800379685A CN200680037968A CN101288029B CN 101288029 B CN101288029 B CN 101288029B CN 2006800379685 A CN2006800379685 A CN 2006800379685A CN 200680037968 A CN200680037968 A CN 200680037968A CN 101288029 B CN101288029 B CN 101288029B
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China
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composition
polymkeric substance
group
residue
monomer units
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CN2006800379685A
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English (en)
Chinese (zh)
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CN101288029A (zh
Inventor
黄武松
W·希思
K·帕特尔
P·瓦拉纳斯
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
CN2006800379685A 2005-10-13 2006-08-31 在193纳米辐射波长具有低折射率的顶部抗反射涂料组合物 Expired - Fee Related CN101288029B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/249,693 2005-10-13
US11/249,693 US7544750B2 (en) 2005-10-13 2005-10-13 Top antireflective coating composition with low refractive index at 193nm radiation wavelength
PCT/EP2006/065877 WO2007042348A1 (en) 2005-10-13 2006-08-31 Top antireflective coating composition with low refractive index at 193nm radiation wavelength

Publications (2)

Publication Number Publication Date
CN101288029A CN101288029A (zh) 2008-10-15
CN101288029B true CN101288029B (zh) 2012-05-30

Family

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Family Applications (1)

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CN2006800379685A Expired - Fee Related CN101288029B (zh) 2005-10-13 2006-08-31 在193纳米辐射波长具有低折射率的顶部抗反射涂料组合物

Country Status (9)

Country Link
US (1) US7544750B2 (enExample)
EP (1) EP1934654B1 (enExample)
JP (2) JP4866912B2 (enExample)
KR (1) KR101054729B1 (enExample)
CN (1) CN101288029B (enExample)
AT (1) ATE456076T1 (enExample)
DE (1) DE602006011927D1 (enExample)
TW (1) TWI391787B (enExample)
WO (1) WO2007042348A1 (enExample)

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KR101096954B1 (ko) * 2006-01-31 2011-12-20 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 보호막 재료 및 패턴 형성 방법
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP4888655B2 (ja) * 2006-08-11 2012-02-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5162934B2 (ja) * 2007-03-23 2013-03-13 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP5229228B2 (ja) * 2007-09-26 2013-07-03 Ｊｓｒ株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
JP5382321B2 (ja) * 2009-03-31 2014-01-08 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
WO2022196485A1 (ja) * 2021-03-19 2022-09-22 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物

Citations (3)

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CN1330779A (zh) * 1998-11-18 2002-01-09 克拉里安特国际有限公司 用于深紫外线光刻胶的防反射组合物
CN1585097A (zh) * 2003-08-22 2005-02-23 国际商业机器公司 抗反射硬掩膜及其应用
CN1595296A (zh) * 2003-08-05 2005-03-16 国际商业机器公司 光刻抗反射硬掩模合成物及其使用

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JP2643056B2 (ja) * 1991-06-28 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面反射防止コーティング形成組成物及びその使用
SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
TW357395B (en) * 1996-03-07 1999-05-01 Clariant Finance Bvi Ltd Light-absorbing antireflective layers with improved performance due to refractive index optimization
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JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
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KR100586541B1 (ko) * 2003-07-16 2006-06-07 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
KR100586542B1 (ko) * 2003-07-31 2006-06-07 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조 방법 및 이를포함하는 반사방지막 조성물
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
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JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4520245B2 (ja) * 2004-08-17 2010-08-04 セントラル硝子株式会社 リソグラフィー用トップコート膜の製造方法
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US7709182B2 (en) * 2004-12-03 2010-05-04 Jsr Corporation Composition for forming antireflection film, layered product, and method of forming resist pattern
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CN1330779A (zh) * 1998-11-18 2002-01-09 克拉里安特国际有限公司 用于深紫外线光刻胶的防反射组合物
CN1595296A (zh) * 2003-08-05 2005-03-16 国际商业机器公司 光刻抗反射硬掩模合成物及其使用
CN1585097A (zh) * 2003-08-22 2005-02-23 国际商业机器公司 抗反射硬掩膜及其应用

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BAI FENGLIAN ET.AL.Alternating copolymers of 2-vinylnaphthalene and methacrylic acid in aqueous solution.《CHEMICAL ABSTRACTS》.1987,第108卷(第18期),384-411. *
Takeshi Okino.et.Resists using the absorption band shift method for ArF excimer laser lithography.《Journal of Photopolymer Science and Technology》.1998,第11卷(第3期),全文. *
Yusuke TAKANO.et.Top antireflective coating process for 193nm lithography.《Japanese Journal of Applied Physics》.2002,第41卷(第6B期),全文. *

Also Published As

Publication number Publication date
CN101288029A (zh) 2008-10-15
EP1934654B1 (en) 2010-01-20
US7544750B2 (en) 2009-06-09
ATE456076T1 (de) 2010-02-15
WO2007042348A1 (en) 2007-04-19
KR20080063302A (ko) 2008-07-03
US20070087285A1 (en) 2007-04-19
TW200734823A (en) 2007-09-16
DE602006011927D1 (de) 2010-03-11
KR101054729B1 (ko) 2011-08-05
JP4866912B2 (ja) 2012-02-01
JP2009511969A (ja) 2009-03-19
EP1934654A1 (en) 2008-06-25
JP2012008586A (ja) 2012-01-12
JP5182830B2 (ja) 2013-04-17
TWI391787B (zh) 2013-04-01

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Granted publication date: 20120530