JP4866912B2 - １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 - Google Patents

１９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 Download PDF

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Publication number
JP4866912B2
JP4866912B2 JP2008534956A JP2008534956A JP4866912B2 JP 4866912 B2 JP4866912 B2 JP 4866912B2 JP 2008534956 A JP2008534956 A JP 2008534956A JP 2008534956 A JP2008534956 A JP 2008534956A JP 4866912 B2 JP4866912 B2 JP 4866912B2
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Japan
Prior art keywords
polymer
resist layer
radiation
refractive index
monomer units
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JP2008534956A
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Japanese (ja)
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JP2009511969A (ja
JP2009511969A5 (enExample
Inventor
ファン、ウーサン
ヒース、ウィリアム
パテル、カウシャル
バラナシ、プシュカラ
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2008534956A 2005-10-13 2006-08-31 １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物 Expired - Fee Related JP4866912B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/249,693 2005-10-13
US11/249,693 US7544750B2 (en) 2005-10-13 2005-10-13 Top antireflective coating composition with low refractive index at 193nm radiation wavelength
PCT/EP2006/065877 WO2007042348A1 (en) 2005-10-13 2006-08-31 Top antireflective coating composition with low refractive index at 193nm radiation wavelength

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011171777A Division JP5182830B2 (ja) 2005-10-13 2011-08-05 １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物

Publications (3)

Publication Number Publication Date
JP2009511969A JP2009511969A (ja) 2009-03-19
JP2009511969A5 JP2009511969A5 (enExample) 2010-08-12
JP4866912B2 true JP4866912B2 (ja) 2012-02-01

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Family Applications (2)

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JP2008534956A Expired - Fee Related JP4866912B2 (ja) 2005-10-13 2006-08-31 １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物
JP2011171777A Expired - Fee Related JP5182830B2 (ja) 2005-10-13 2011-08-05 １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物

Family Applications After (1)

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JP2011171777A Expired - Fee Related JP5182830B2 (ja) 2005-10-13 2011-08-05 １９３ｎｍの放射波長において低屈折率を有する上面反射防止コーティング組成物

Country Status (9)

Country Link
US (1) US7544750B2 (enExample)
EP (1) EP1934654B1 (enExample)
JP (2) JP4866912B2 (enExample)
KR (1) KR101054729B1 (enExample)
CN (1) CN101288029B (enExample)
AT (1) ATE456076T1 (enExample)
DE (1) DE602006011927D1 (enExample)
TW (1) TWI391787B (enExample)
WO (1) WO2007042348A1 (enExample)

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US20070122741A1 (en) * 2005-11-29 2007-05-31 Shin-Etsu Chemical Co., Ltd. Resist protective coating material and patterning process
KR101096954B1 (ko) * 2006-01-31 2011-12-20 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 보호막 재료 및 패턴 형성 방법
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
US7608390B2 (en) * 2006-08-04 2009-10-27 International Business Machines Corporation Top antireflective coating composition containing hydrophobic and acidic groups
JP4888655B2 (ja) * 2006-08-11 2012-02-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5162934B2 (ja) * 2007-03-23 2013-03-13 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及びレジストパターン形成方法
JP5229228B2 (ja) * 2007-09-26 2013-07-03 Ｊｓｒ株式会社 液浸用上層膜形成用組成物及び液浸用上層膜並びにフォトレジストパターン形成方法
JP4993139B2 (ja) * 2007-09-28 2012-08-08 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
JP5010569B2 (ja) * 2008-01-31 2012-08-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
US8097401B2 (en) 2009-03-24 2012-01-17 International Business Machines Corporation Self-forming top anti-reflective coating compositions and, photoresist mixtures and method of imaging using same
JP5382321B2 (ja) * 2009-03-31 2014-01-08 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US9012133B2 (en) 2011-08-30 2015-04-21 International Business Machines Corporation Removal of alkaline crystal defects in lithographic patterning
WO2022196485A1 (ja) * 2021-03-19 2022-09-22 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物

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JP2643056B2 (ja) * 1991-06-28 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面反射防止コーティング形成組成物及びその使用
SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
JP3334304B2 (ja) * 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems
TW357395B (en) * 1996-03-07 1999-05-01 Clariant Finance Bvi Ltd Light-absorbing antireflective layers with improved performance due to refractive index optimization
US6274295B1 (en) * 1997-03-06 2001-08-14 Clariant Finance (Bvi) Limited Light-absorbing antireflective layers with improved performance due to refractive index optimization
JP3965740B2 (ja) 1997-10-24 2007-08-29 旭硝子株式会社 コーティング組成物
US5994007A (en) * 1997-12-19 1999-11-30 Kabushiki Kaisha Toshiba Pattern forming method utilizing first insulative and then conductive overlayer and underlayer
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KR100586541B1 (ko) * 2003-07-16 2006-06-07 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
KR100586542B1 (ko) * 2003-07-31 2006-06-07 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조 방법 및 이를포함하는 반사방지막 조성물
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JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
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JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4520245B2 (ja) * 2004-08-17 2010-08-04 セントラル硝子株式会社 リソグラフィー用トップコート膜の製造方法
EP1806370B1 (en) * 2004-09-30 2013-05-22 JSR Corporation Copolymer and upper film-forming composition
US7709182B2 (en) * 2004-12-03 2010-05-04 Jsr Corporation Composition for forming antireflection film, layered product, and method of forming resist pattern
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
US7375172B2 (en) * 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures

Also Published As

Publication number Publication date
CN101288029A (zh) 2008-10-15
EP1934654B1 (en) 2010-01-20
US7544750B2 (en) 2009-06-09
ATE456076T1 (de) 2010-02-15
CN101288029B (zh) 2012-05-30
WO2007042348A1 (en) 2007-04-19
KR20080063302A (ko) 2008-07-03
US20070087285A1 (en) 2007-04-19
TW200734823A (en) 2007-09-16
DE602006011927D1 (de) 2010-03-11
KR101054729B1 (ko) 2011-08-05
JP2009511969A (ja) 2009-03-19
EP1934654A1 (en) 2008-06-25
JP2012008586A (ja) 2012-01-12
JP5182830B2 (ja) 2013-04-17
TWI391787B (zh) 2013-04-01

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