TWI391779B - 光罩坯片及轉印光罩 - Google Patents

光罩坯片及轉印光罩 Download PDF

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Publication number
TWI391779B
TWI391779B TW097117082A TW97117082A TWI391779B TW I391779 B TWI391779 B TW I391779B TW 097117082 A TW097117082 A TW 097117082A TW 97117082 A TW97117082 A TW 97117082A TW I391779 B TWI391779 B TW I391779B
Authority
TW
Taiwan
Prior art keywords
substrate
photoresist
film
photoresist film
region
Prior art date
Application number
TW097117082A
Other languages
English (en)
Chinese (zh)
Other versions
TW200837492A (en
Inventor
小林英雄
樋口孝雄
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW200837492A publication Critical patent/TW200837492A/zh
Application granted granted Critical
Publication of TWI391779B publication Critical patent/TWI391779B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW097117082A 2003-09-29 2004-09-29 光罩坯片及轉印光罩 TWI391779B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003338533 2003-09-29

Publications (2)

Publication Number Publication Date
TW200837492A TW200837492A (en) 2008-09-16
TWI391779B true TWI391779B (zh) 2013-04-01

Family

ID=34373315

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097117082A TWI391779B (zh) 2003-09-29 2004-09-29 光罩坯片及轉印光罩
TW093129331A TWI387846B (zh) 2003-09-29 2004-09-29 光罩坯片及其製法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW093129331A TWI387846B (zh) 2003-09-29 2004-09-29 光罩坯片及其製法

Country Status (6)

Country Link
US (1) US7674561B2 (https=)
JP (2) JP2011040770A (https=)
KR (5) KR20050031425A (https=)
CN (2) CN100537053C (https=)
DE (1) DE102004047355B4 (https=)
TW (2) TWI391779B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI917928B (zh) 2023-04-17 2026-03-11 南韓商聚光璐米納股份有限公司 空白掩模及其製造方法

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DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
KR100780814B1 (ko) * 2006-08-16 2007-11-30 주식회사 에스앤에스텍 차폐판 및 이를 구비한 레지스트 코팅장치
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP5393972B2 (ja) * 2007-11-05 2014-01-22 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
KR101654515B1 (ko) * 2009-07-01 2016-09-07 주식회사 에스앤에스텍 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크
CN101968606B (zh) * 2009-07-27 2013-01-23 北京京东方光电科技有限公司 掩膜基板和边框胶固化系统
KR102239197B1 (ko) * 2012-09-13 2021-04-09 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
CN106610568A (zh) * 2015-10-27 2017-05-03 沈阳芯源微电子设备有限公司 一种涂胶显影工艺模块及该模块内环境参数的控制方法
JP6504996B2 (ja) * 2015-11-04 2019-04-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体
KR102513705B1 (ko) 2018-06-29 2023-03-24 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 포토마스크
JP7056746B2 (ja) * 2018-09-10 2022-04-19 東京エレクトロン株式会社 塗布膜形成方法及び塗布膜形成装置
JP7154572B2 (ja) * 2018-09-12 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7202901B2 (ja) * 2019-01-18 2023-01-12 東京エレクトロン株式会社 塗布膜形成方法及び塗布膜形成装置
TWI699580B (zh) * 2019-03-07 2020-07-21 友達光電股份有限公司 陣列基板
KR102743196B1 (ko) * 2023-04-17 2024-12-16 에스케이엔펄스 주식회사 블랭크 마스크 및 이의 제조 방법
CN117406314A (zh) * 2023-12-01 2024-01-16 华中光电技术研究所(中国船舶集团有限公司第七一七研究所) 一种球面元件上抛光平面保护漆的涂覆方法
CN120233623A (zh) * 2023-12-29 2025-07-01 Sk恩普士有限公司 空白掩模及制造空白掩模的方法

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI917928B (zh) 2023-04-17 2026-03-11 南韓商聚光璐米納股份有限公司 空白掩模及其製造方法

Also Published As

Publication number Publication date
DE102004047355A1 (de) 2005-04-28
JP2015111312A (ja) 2015-06-18
US7674561B2 (en) 2010-03-09
CN100537053C (zh) 2009-09-09
KR20070039908A (ko) 2007-04-13
KR20100085003A (ko) 2010-07-28
CN1605397A (zh) 2005-04-13
CN1983028B (zh) 2012-07-25
KR101047646B1 (ko) 2011-07-07
KR20070039909A (ko) 2007-04-13
US20050069787A1 (en) 2005-03-31
TWI387846B (zh) 2013-03-01
TW200837492A (en) 2008-09-16
JP2011040770A (ja) 2011-02-24
KR20050031425A (ko) 2005-04-06
KR20080075816A (ko) 2008-08-19
DE102004047355B4 (de) 2022-03-10
KR100976977B1 (ko) 2010-08-23
CN1983028A (zh) 2007-06-20
TW200517786A (en) 2005-06-01
KR101045177B1 (ko) 2011-06-30

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