TWI390705B - 用於被動積體裝置之靜電放電保護 - Google Patents

用於被動積體裝置之靜電放電保護 Download PDF

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Publication number
TWI390705B
TWI390705B TW095143972A TW95143972A TWI390705B TW I390705 B TWI390705 B TW I390705B TW 095143972 A TW095143972 A TW 095143972A TW 95143972 A TW95143972 A TW 95143972A TW I390705 B TWI390705 B TW I390705B
Authority
TW
Taiwan
Prior art keywords
substrate
resistance
spaced apart
layer
charge leakage
Prior art date
Application number
TW095143972A
Other languages
English (en)
Chinese (zh)
Other versions
TW200733347A (en
Inventor
米特拉 艾尼
希爾 達若Ｇ
拉加高博良 卡錫克
雷斯 阿道夫Ｃ
Original Assignee
飛思卡爾半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200733347A publication Critical patent/TW200733347A/zh
Application granted granted Critical
Publication of TWI390705B publication Critical patent/TWI390705B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW095143972A 2005-12-14 2006-11-28 用於被動積體裝置之靜電放電保護 TWI390705B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/300,710 US7335955B2 (en) 2005-12-14 2005-12-14 ESD protection for passive integrated devices

Publications (2)

Publication Number Publication Date
TW200733347A TW200733347A (en) 2007-09-01
TWI390705B true TWI390705B (zh) 2013-03-21

Family

ID=38138437

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143972A TWI390705B (zh) 2005-12-14 2006-11-28 用於被動積體裝置之靜電放電保護

Country Status (5)

Country Link
US (2) US7335955B2 (enExample)
JP (1) JP5165583B2 (enExample)
CN (1) CN101331658B (enExample)
TW (1) TWI390705B (enExample)
WO (1) WO2007120295A2 (enExample)

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US7772106B2 (en) * 2007-11-07 2010-08-10 Stats Chippac, Ltd. Method of forming an inductor on a semiconductor wafer
US8269308B2 (en) * 2008-03-19 2012-09-18 Stats Chippac, Ltd. Semiconductor device with cross-talk isolation using M-cap and method thereof
US7772080B2 (en) * 2008-07-02 2010-08-10 Stats Chippac, Ltd. Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices
US9343900B2 (en) * 2008-07-24 2016-05-17 Robert Bosch Gmbh Passive network for electrostatic protection of integrated circuits
US7973358B2 (en) * 2008-08-07 2011-07-05 Infineon Technologies Ag Coupler structure
TWI424544B (zh) * 2011-03-31 2014-01-21 聯詠科技股份有限公司 積體電路裝置
US9281681B2 (en) 2012-11-21 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits and methods
CN105633926A (zh) * 2014-10-31 2016-06-01 展讯通信（上海）有限公司 实现集成无源电路静电防护的结构
CN105575300B (zh) * 2015-12-16 2018-11-09 武汉华星光电技术有限公司 阵列基板的esd检测方法
WO2017196149A1 (ko) * 2016-05-13 2017-11-16 주식회사 모다이노칩 컨택터 및 이를 구비하는 전자기기
US11329013B2 (en) 2020-05-28 2022-05-10 Nxp Usa, Inc. Interconnected substrate arrays containing electrostatic discharge protection grids and associated microelectronic packages

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US5946176A (en) * 1998-08-17 1999-08-31 International Business Machines Corporation Electrostatic discharge protection utilizing microelectromechanical switch
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
JP3759381B2 (ja) * 2000-07-17 2006-03-22 アルプス電気株式会社 電子回路基板
US6472286B1 (en) * 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
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US7005708B2 (en) * 2001-06-14 2006-02-28 Sarnoff Corporation Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling
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US20030058591A1 (en) * 2001-09-26 2003-03-27 Jeffrey Johnson Electro-static discharge protection for high frequency port on an integrated circuit
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Also Published As

Publication number Publication date
CN101331658B (zh) 2012-09-26
US20070132029A1 (en) 2007-06-14
JP2009520368A (ja) 2009-05-21
US7335955B2 (en) 2008-02-26
TW200733347A (en) 2007-09-01
WO2007120295A3 (en) 2008-04-10
US7642182B2 (en) 2010-01-05
CN101331658A (zh) 2008-12-24
US20080108217A1 (en) 2008-05-08
JP5165583B2 (ja) 2013-03-21
WO2007120295A2 (en) 2007-10-25

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