TWI388653B - Grinding method for grinding - Google Patents
Grinding method for grinding Download PDFInfo
- Publication number
- TWI388653B TWI388653B TW097124207A TW97124207A TWI388653B TW I388653 B TWI388653 B TW I388653B TW 097124207 A TW097124207 A TW 097124207A TW 97124207 A TW97124207 A TW 97124207A TW I388653 B TWI388653 B TW I388653B
- Authority
- TW
- Taiwan
- Prior art keywords
- slurry
- polishing
- regenerating
- used slurry
- experimental example
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000000227 grinding Methods 0.000 title claims description 12
- 239000002002 slurry Substances 0.000 claims description 146
- 238000005498 polishing Methods 0.000 claims description 56
- 239000002270 dispersing agent Substances 0.000 claims description 33
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 28
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 28
- 230000001172 regenerating effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229920003169 water-soluble polymer Polymers 0.000 claims description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 238000011069 regeneration method Methods 0.000 claims description 5
- 230000008929 regeneration Effects 0.000 claims description 4
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 239000002738 chelating agent Substances 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000001914 filtration Methods 0.000 description 14
- 238000003860 storage Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 239000007787 solid Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000005484 gravity Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 239000011550 stock solution Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010979 pH adjustment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- WTBIAPVQQBCLFP-UHFFFAOYSA-N N.N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O Chemical compound N.N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O WTBIAPVQQBCLFP-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- -1 amine carboxylate Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- XVBXOXSGLCFKBN-UHFFFAOYSA-N ethane-1,2-diamine tetrahydrochloride Chemical compound Cl.Cl.Cl.Cl.NCCN XVBXOXSGLCFKBN-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001303 quality assessment method Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007217118A JP5148948B2 (ja) | 2007-08-23 | 2007-08-23 | 研磨用スラリーのリサイクル方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200918653A TW200918653A (en) | 2009-05-01 |
| TWI388653B true TWI388653B (zh) | 2013-03-11 |
Family
ID=40382618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097124207A TWI388653B (zh) | 2007-08-23 | 2008-06-27 | Grinding method for grinding |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20090053981A1 (ja) |
| JP (1) | JP5148948B2 (ja) |
| TW (1) | TWI388653B (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5297695B2 (ja) * | 2008-05-30 | 2013-09-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | スラリー供給装置及び同装置を用いる半導体ウェーハの研磨方法 |
| JP2010221337A (ja) * | 2009-03-24 | 2010-10-07 | Ngk Insulators Ltd | 使用済み研削液の再利用方法 |
| JP2011011307A (ja) | 2009-07-03 | 2011-01-20 | Sumco Corp | ウェーハ研磨用スラリーのリサイクル方法およびそのリサイクル装置 |
| US20110177623A1 (en) * | 2010-01-15 | 2011-07-21 | Confluense Llc | Active Tribology Management of CMP Polishing Material |
| US8557134B2 (en) * | 2010-01-28 | 2013-10-15 | Environmental Process Solutions, Inc. | Accurately monitored CMP recycling |
| US20120295443A1 (en) * | 2010-01-29 | 2012-11-22 | Fujimi Incorporated | Method for reclaiming semiconductor wafer and polishing composition |
| JP5516184B2 (ja) * | 2010-07-26 | 2014-06-11 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
| JP5760403B2 (ja) * | 2010-11-24 | 2015-08-12 | 株式会社Sumco | 薬液リサイクル方法および該方法に用いる装置 |
| WO2013038953A1 (ja) * | 2011-09-14 | 2013-03-21 | エムテックスマート株式会社 | Ｌｅｄの製造方法、ｌｅｄの製造装置およびｌｅｄ |
| US8696404B2 (en) | 2011-12-21 | 2014-04-15 | WD Media, LLC | Systems for recycling slurry materials during polishing processes |
| CN105313015B (zh) * | 2014-07-29 | 2019-08-16 | 盛美半导体设备（上海）有限公司 | 抛光液过滤装置 |
| US10688623B2 (en) * | 2014-09-30 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Slurry dispersion system with real time control |
| JP6206388B2 (ja) * | 2014-12-15 | 2017-10-04 | 信越半導体株式会社 | シリコンウェーハの研磨方法 |
| JP6174625B2 (ja) * | 2015-05-22 | 2017-08-02 | 株式会社フジミインコーポレーテッド | 研磨方法及び組成調整剤 |
| JP5843036B1 (ja) * | 2015-06-23 | 2016-01-13 | コニカミノルタ株式会社 | 再生研磨材スラリーの調製方法 |
| WO2019189212A1 (ja) | 2018-03-28 | 2019-10-03 | 株式会社山本金属製作所 | 冷却液良否管理システム及び冷却液良否検出ユニット |
| CN110746889A (zh) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | 一种半导体晶圆加工过程中抛光液循环利用的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09102475A (ja) * | 1995-10-03 | 1997-04-15 | Hitachi Ltd | 研磨装置 |
| JPH1110540A (ja) * | 1997-06-23 | 1999-01-19 | Speedfam Co Ltd | Ｃｍｐ装置のスラリリサイクルシステム及びその方法 |
| JPH11277434A (ja) * | 1998-03-30 | 1999-10-12 | Speedfam Co Ltd | Ｃｍｐ装置のスラリリサイクルシステム及びその方法 |
| JP3708748B2 (ja) * | 1999-04-23 | 2005-10-19 | 松下電器産業株式会社 | 研磨剤の再生装置および研磨剤の再生方法 |
| JP4585100B2 (ja) * | 2000-08-24 | 2010-11-24 | 日本化学工業株式会社 | 研磨使用済み液の再生方法 |
| KR100398141B1 (ko) * | 2000-10-12 | 2003-09-13 | 아남반도체 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법 |
| JP3440419B2 (ja) * | 2001-02-02 | 2003-08-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| JP2004063858A (ja) * | 2002-07-30 | 2004-02-26 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP4551167B2 (ja) * | 2004-09-14 | 2010-09-22 | 日本化学工業株式会社 | 半導体ウェーハの研磨装置及びこれを用いた研磨方法 |
| KR100674927B1 (ko) * | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Ｃｍｐ용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 |
| KR100697293B1 (ko) * | 2005-10-04 | 2007-03-20 | 삼성전자주식회사 | 화학기계적 연마용 연마제 및 이를 이용한 화학기계적연마방법 |
| JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
| JP2009158810A (ja) * | 2007-12-27 | 2009-07-16 | Toshiba Corp | 化学的機械的研磨用スラリーおよび半導体装置の製造方法 |
-
2007
- 2007-08-23 JP JP2007217118A patent/JP5148948B2/ja active Active
-
2008
- 2008-06-27 TW TW097124207A patent/TWI388653B/zh active
- 2008-08-15 US US12/192,351 patent/US20090053981A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009054629A (ja) | 2009-03-12 |
| US20090053981A1 (en) | 2009-02-26 |
| JP5148948B2 (ja) | 2013-02-20 |
| TW200918653A (en) | 2009-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI388653B (zh) | Grinding method for grinding | |
| JP5297695B2 (ja) | スラリー供給装置及び同装置を用いる半導体ウェーハの研磨方法 | |
| JP5002175B2 (ja) | 研磨スラリーおよびウエハ再生方法 | |
| TWI586795B (zh) | 磁碟基板用研磨液組合物 | |
| TWI499481B (zh) | 鈰系研磨材之再生方法 | |
| TW201012885A (en) | Wetting agent for semiconductor, polishing composition using the same and polishing method, polishing composition concentrate, wetting agent concentrate | |
| WO2013094399A1 (ja) | 研磨材再生方法及び再生研磨材 | |
| JP3641956B2 (ja) | 研磨スラリーの再生システム | |
| JP4824976B2 (ja) | 半導体ウェハの研磨方法 | |
| JP5760403B2 (ja) | 薬液リサイクル方法および該方法に用いる装置 | |
| JP6292119B2 (ja) | 研磨材再生方法 | |
| JP6646436B2 (ja) | シリカ分散液の製造方法 | |
| JP2011011307A (ja) | ウェーハ研磨用スラリーのリサイクル方法およびそのリサイクル装置 | |
| JP6044551B2 (ja) | 研磨材分離方法 | |
| CN108367410B (zh) | 研磨材料淤浆的再生方法 | |
| CN109427573B (zh) | 晶片的研磨方法 | |
| JP6317984B2 (ja) | 再生酸化セリウム系研磨剤粒子の製造方法 | |
| JP4455833B2 (ja) | ウエーハの研磨方法 | |
| TWI731113B (zh) | 磁碟基板之製造方法 | |
| JP2022172678A (ja) | 再生研磨剤スラリーの調製方法及び研磨剤スラリー | |
| JP2001225070A (ja) | 研磨材の回収装置 | |
| TWI597338B (zh) | Hard disk substrate manufacturing method | |
| JP2023061348A (ja) | 研磨剤スラリーの再生方法及び研磨剤スラリーの再生システム | |
| KR101988451B1 (ko) | 세리아 함유 폐연마재의 재생 방법 | |
| JP2017079087A (ja) | 磁気記録媒体用ガラス基板の製造方法 |