TWI386572B - Halogen gas or a halogen compound gas - Google Patents
Halogen gas or a halogen compound gas Download PDFInfo
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- TWI386572B TWI386572B TW100112830A TW100112830A TWI386572B TW I386572 B TWI386572 B TW I386572B TW 100112830 A TW100112830 A TW 100112830A TW 100112830 A TW100112830 A TW 100112830A TW I386572 B TWI386572 B TW I386572B
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- Prior art keywords
- valve
- gas
- diaphragm
- valve seat
- seat portion
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- 229910052736 halogen Inorganic materials 0.000 title claims description 16
- 150000002367 halogens Chemical class 0.000 title claims description 16
- 150000002366 halogen compounds Chemical class 0.000 title claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 35
- 239000011737 fluorine Substances 0.000 claims description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 23
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000007789 gas Substances 0.000 description 158
- 238000005498 polishing Methods 0.000 description 19
- 238000011049 filling Methods 0.000 description 17
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 229910000831 Steel Inorganic materials 0.000 description 11
- 239000001307 helium Substances 0.000 description 11
- 229910052734 helium Inorganic materials 0.000 description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 11
- 239000011572 manganese Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000010959 steel Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 150000002222 fluorine compounds Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 241000923606 Schistes Species 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000617 Mangalloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/30—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces specially adapted for pressure containers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/30—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces specially adapted for pressure containers
- F16K1/301—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces specially adapted for pressure containers only shut-off valves, i.e. valves without additional means
- F16K1/302—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces specially adapted for pressure containers only shut-off valves, i.e. valves without additional means with valve member and actuator on the same side of the seat
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J3/00—Diaphragms; Bellows; Bellows pistons
- F16J3/02—Diaphragms
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K25/00—Details relating to contact between valve members and seats
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/126—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm the seat being formed on a rib perpendicular to the fluid line
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
- F16K7/16—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat the diaphragm being mechanically actuated, e.g. by screw-spindle or cam
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
- F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
- F17C2205/0302—Fittings, valves, filters, or components in connection with the gas storage device
- F17C2205/0323—Valves
- F17C2205/0329—Valves manually actuated
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
- F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
- F17C2205/0302—Fittings, valves, filters, or components in connection with the gas storage device
- F17C2205/0382—Constructional details of valves, regulators
- F17C2205/0385—Constructional details of valves, regulators in blocks or units
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
- F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
- F17C2205/0388—Arrangement of valves, regulators, filters
- F17C2205/0394—Arrangement of valves, regulators, filters in direct contact with the pressure vessel
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
- F17C2223/01—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the phase
- F17C2223/0107—Single phase
- F17C2223/0123—Single phase gaseous, e.g. CNG, GNC
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2260/00—Purposes of gas storage and gas handling
- F17C2260/03—Dealing with losses
- F17C2260/035—Dealing with losses of fluid
- F17C2260/036—Avoiding leaks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2270/00—Applications
- F17C2270/05—Applications for industrial use
- F17C2270/0518—Semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Sealing Devices (AREA)
- Lift Valve (AREA)
Description
本發明係關於一種填充有鹵素或鹵素化合物氣體之容器所使用之直接接觸型隔膜閥。
氟氣作為半導體裝置、MEMS(Micro Electro Mechanical System,微機電系統)裝置、液晶用TFT(Thin film Transistor,薄膜電晶體)面板及太陽電池等之半導體製造步驟中之基板的刻蝕製程或CVD(Chemical Vapor Deposition,化學氣相沈積)裝置等薄膜形成裝置之清洗製程用氣體而承擔重要作用。
作為供給氟氣之方法之一,可列舉將氟氣高壓填充於儲氣瓶內而進行供給之方法。此時,係將氟氣填充至儲氣瓶內並經由閥而供給於半導體製造裝置。藉由提昇氟氣之填充壓力,減小儲氣瓶之旋轉頻率可謀求減少儲氣瓶之輸送費、作業負擔,或藉由使用高濃度之氟氣可有效率地進行清洗步驟,因此業界期望將氟氣以高壓且高濃度填充至儲氣瓶內。
鑒於此種背景,專利文獻1中揭示有一種以高壓力對半導體製造系統供給高濃度氟氣之閥。
專利文獻1:日本專利特開2005-207480號公報
由於專利文獻1中所記載之閥係利用薄片盤開閉氣體之通路,並利用隔膜密封與外部之氣密的閥,故而閥室內之氣體易滯留之死角變大。於閥室內之氣體易滯留之死角變大之情形時,若將高壓、高濃度之氟氣導入閥室內,則藉由隔熱壓縮易使閥室內之溫度上升。若閥室內之溫度上升,則變得易發生閥室內之表面腐蝕或樹脂材質之劣化。其結果為,由表面腐蝕產生之生成物附著於閥室內(尤其是閥座部),由腐蝕產生之生成物導致氣密狀態變得不良,因而易洩漏。
於如此使用閥而供給含有氟氣等鹵素氣體之高腐蝕性氣體之情形時,由於腐蝕性氣體易引起閥內部之表面腐蝕,故而存在如下問題:所生成之腐蝕物附著於閥座表面部,難以維持充分之氣密性。
本發明係鑒於上述問題而完成者,其目的在於提供一種具有充分之氣密性之鹵素氣體或鹵素化合物氣體用之填充容器用閥。
本案申請人經努力研究,結果發現:於隔膜閥之閥座部與隔膜之接觸面上,藉由將閥座部之接觸面之表面粗糙度、閥座部之接觸面之曲率半徑、及隔膜之接觸氣體部表面積和隔膜與閥座部之接觸面積之面積比調整為特定範圍,可改善閥之氣密性,從而完成本發明。
即,本發明之第1態樣係提供一種直接接觸型隔膜閥,其特徵在於:具備設置有入口通道及出口通道且內部流通鹵素氣體或鹵素化合物氣體之閥本體、與閥本體之入口通道及出口通道連通之閥室、設置於入口通道之內端開口部之閥座部、設置於閥座部之上方而保持閥室內之氣密同時開閉入口通道及出口通道之隔膜、使隔膜之中央部下降至下方之閥桿、使閥桿向上下方向移動之驅動部;於閥座部與隔膜之接觸面上,閥座部之接觸面之表面粗糙度Ra之值為0.1 μm以上、10.0 μm以下,閥座部之接觸面之曲率半徑R為100 mm以上、1000 mm以下,隔膜之接觸氣體部表面積Sa和隔膜與閥座部之接觸面積Sb之面積比率Sb/Sa為0.2%以上、10%以下。
於上述閥中,隔膜之縱向彈性模數較佳為150 GPa以上、250 GPa以下。又,上述閥可安裝至如下之儲氣瓶容器上而使用,該儲氣瓶容器中填充之上述鹵素氣體為氟氣,且氟氣之濃度係填充至20體積%以上、100體積%以下,壓力係填充至0 MPaG以上、14.7 MPaG以下。
進而,本發明之第2態樣係提供一種具有上述閥之氣體填充容器。
以下,基於圖式說明本發明之實施形態。
圖1係本發明之實施形態之閥1之縱向截面圖。閥1係使隔膜就座、離座閥座部而進行開閉之直接接觸型隔膜閥。直接接觸型隔膜閥通常為公知,本發明之特徵係關於隔膜與閥座部之構造者。
首先,對閥1之構造進行說明。
如圖1所示,閥1具備設置有入口通道5及出口通道6之閥本體2、與入口通道5及出口通道6連通之閥室7、設置於入口通道5之內端開口部之閥座部12、設置於閥座部12之上方而保持閥室內12之氣密同時開閉入口通道5及出口通道6之隔膜8、使隔膜8之中央部下降至下方之閥桿9、使閥桿9向上下方向移動之驅動部10。進而,如圖1所示,閥本體2之下部形成有支撐螺釘3,並安裝於設置於此支撐螺釘3之外周之內螺紋部分之氣體填充容器4的氣體取出口。支撐螺釘3之下表面形成有成為氣體之流通路徑之入口通道5,此入口通道5之前端依序形成有閥室7與氣體之出口通道6。
圖2係圖1所示之閥室7附近A之詳細圖。再者,圖2中之箭頭G表示氣體流路。又,圖3及圖4係閥室7之橫截平面圖。
如圖2所示,與閥室7連通之入口通道5之內端部形成有開口,於該內端開口部之周圍形成有凹狀之閥座部12。以於該閥座部12之上方配置隔膜8,且該隔膜8之中央部可就座、離座閥座部12之方式構成。進而,以該隔膜8之周圍部利用閥蓋11按壓固定於閥室7之周壁,並利用該隔膜8保持閥室7之氣密性之方式構成。
隔膜8之上面中央部載置有用以使隔膜8就座、離座閥座部12之閥桿9。進而,於該閥桿9之上端部,經由驅動軸而固定有閥桿操作用之驅動部10。以利用升降自如地配置於隔膜8之上方而使隔膜8之中央部下降至下方之閥桿9、與使閥桿9下降或上升之驅動部10,可使隔膜8就座、離座而進行氣體流路之開閉之方式構成。具體而言,若藉由自驅動部10供給之驅動力對閥桿9向下進行按壓操作,則隔膜8抗拒由氣體壓力產生之向上力或隔膜8之彈性回彈力而閉閥抵接於閥座部12。相對於此,若解除對閥桿9之按壓力,則隔膜8之中央部彈性恢復至向上凸狀,氣體之入口通道5與閥室7連通。
驅動部10所使用之驅動方式並無特別限定,可使用利用空氣壓等之空氣驅動式(air actuator方式)、利用發動機等之電驅動式、或手動式等。
通常之直接接觸型隔膜閥多使用利用空氣或氮氣等之壓力的氣壓驅動方式作為驅動方式(驅動部10)。於採用氣壓驅動式之情形時,多利用將施加於隔膜8之壓力供給於驅動部之空氣等之驅動壓(例如0.5~0.7 MPa左右)進行固定,因而難以調整施加於隔膜8之壓力。就閥之閥室7之氣密性之觀點而言,調整隔膜8與閥座部12之接觸狀態非常重要,若施加於隔膜8之壓力變得過大,則隔膜8之破損或損傷增大,相反若壓力變得過小,則會變得氣密性不良而易發生洩漏。
因此,較佳為可藉由調整圖3及圖4之斜線所示之隔膜之接觸氣體部面積Sa及閥座部之與隔膜之接觸面之面積Sb而調整隔膜8與閥座部12表面之接觸狀態。
具體而言,若面積比Sb/Sa大於10%,則每單位接觸部面積之荷重變小,氣密性變得不良。另一方面,若面積比Sb/Sa小於0.2%,則接觸部之單位面積所施加之荷重反而增大,變得易發生隔膜或閥座部之破損或損傷,因此較佳為將面積比Sb/Sa設為0.2%以上、10%以下,更佳為0.5%以上、5%以下(參照下述實施例1~5及比較例3~5)。
如此藉由面積比Sb/Sa,可調整施加於隔膜之壓力,可防止由隔膜之破損或損傷、或密封性之不良引起之洩漏,變得可保持隔膜與閥座部之接觸面之平滑性而獲得良好之氣密性。
藉由上述方式構成之閥1較佳為應用於高壓之氟氣及氟化合物氣體,例如作為氟化合物氣體,可列舉COF2
、CF3
OF等。又,當然亦可應用於具有與氟氣相同之腐蝕性之鹵素及鹵素化合物氣體。作為其他可應用之鹵素及鹵素化合物氣體,例如可列舉Cl2
、Br2
、HCl、HF、HBr、NF3
等。
其次,說明閥1於氣體填充容器4上之安裝、及閥1之開閉作用(氣體之流通)。
於自氣體填充容器4取出儲存氣體之情形時,藉由操作設置於閥1上之驅動部10,使隔膜8自閥座12隔離。藉此,氣體填充容器4內之儲存氣體自入口通道5流入閥室7。流入該閥室7之氣體沿著隔膜8之下表面(接觸氣體部表面)擴展至閥室7內,自出口通道6取出氣體。
於將氣體填充至氣體填充容器4內之情形時,氣體填充裝置(無圖示)係連接於氣體之出口通道6。自氣體填充裝置所供給之氣體流入出口通道6、閥室7,沿著閥室7內之隔膜8之下表面(接觸氣體部表面)流動,並經過氣體之入口通道5而填充至氣體填充容器4內。
於將氣體填充容器4安裝於例如半導體製造設備等上之時,係藉由利用惰性氣體之淨化或真空排氣而除去殘留於閥室7或出口通道6之大氣。於閥室7被封閉之狀態下,真空排氣裝置(未圖示)連接於氣體之出口通道6,出口通道6與閥室7內之氣體被抽吸。此時,閥室7內之氣體被抽吸排除。繼而,淨化氣體供給設備(未圖示)連接於出口通道6,包含氮氣等惰性氣體之淨化氣體經過出口通道6而供給於閥室7內。淨化氣體遍及閥室7內之各角落、與殘留於閥室7內之氣體或微粒混合而將其置換。其後,於反覆進行真空排氣處理與淨化處理而自閥室7或出口通道6充分地去除大氣中所含之氧氣或水分等雜質後,將半導體製造設備連接於出口通道6。
安裝閥1之氣體填充容器4只要為具有高壓氣體之耐腐蝕性者,則無特別限定,可使用通常者,例如於填充高壓之氟或氟化合物之情形時,只要為具有耐氟氣腐蝕性者,則可使用不鏽鋼、碳鋼、錳鋼等金屬。
閥本體2之材質只要為具有對鹵素氣體之耐腐蝕性者,則無特別限定,可藉由機械加工而製作。於閥本體2之材質例如使用氟氣或氟化合物氣體之情形時,尤佳為使用接觸氣體部之材質為碳為0.01品質%以上、未達1品質%之金屬或合金。進而,為了減少水分等之氣體分子或微粒吸附於接觸氣體部表面之影響,提昇金屬表面之耐腐蝕性,較佳為對接觸氣體部表面實施機械研磨或研磨粒研磨、電解研磨、複合電解研磨、化學研磨、複合化學研磨等。
又,隔膜8之材質只要為具有對鹵素氣體之耐腐蝕性者,則亦無特別限定,較佳為將碳設為0.1品質%以下,鎳設為70品質%以上,鉻設為0品質%以上、25品質%以下,銅設為0品質%以上、25品質%以下,鉬設為0品質%以上、25品質%以下,鈮設為0品質%以上、10品質%以下。例如可使用赫史特合金、鎳鉻合金等作為隔膜8之材質。
閥座部12之材質只要為具有對鹵素氣體之耐腐蝕性者,則可為金屬或樹脂等而無特別限定,若考慮到水分等之氣體分子或微粒之吸附之影響,則較佳為使用具有對鹵素氣體之耐腐蝕性之金屬。
進而,尤佳為使設置於閥本體2之閥室7內之隔膜8之下表面(接觸氣體部)與閥座12之接觸面變得更加平滑。尤其是於閥座部12與隔膜8之閥座部接觸面12a上,較佳為將閥座部接觸面12a之表面粗糙度設為0.1 μm以上、10.0 μm以下,尤佳為0.2 μm以上、5.0 μm以下。若表面粗糙度大於10.0 μm,則閥座部接觸面12a與隔膜8之接觸面上易黏附附著物,故而欠佳。此處所謂表面粗糙度(Ra值)係指JIS B0601:2001中所記載之算數平均粗糙度,可使用觸針式表面粗糙度測量儀進行測量。
又,如圖2所示,較佳為閥座部接觸面12a之截面形狀之接觸面形成圓弧狀,與隔膜8之下表面(接觸氣體部)接觸之閥座部接觸面12a具有特定之曲率半徑R,較佳為將圖2所示之閥座部接觸面12a之曲率半徑R設為100 mm以上、1000 mm以下,尤佳為150 mm以上、450 mm以下。
對與隔膜8之下表面(接觸氣體部)接觸之閥座部接觸面12a進行平坦加工的方法只要可獲得特定之表面粗糙度、曲率半徑,則無特別限定,例如可列舉:機械研磨或研磨粒研磨、電解研磨、複合電解研磨、化學研磨、複合化學研磨等。
又,於進行閥1之閥室內之氣體流路之開閉,調整氣密狀態方面隔膜8係重要之要素,為了保持與閥座部12表面之良好平滑性及氣密狀態,較佳為將隔膜8之縱向彈性模數設為150 GPa以上、250 GPa以下。於縱向彈性模數小於150 GPa並反覆使用之情形等之時,因強度問題導致隔膜8變得易破損,故而欠佳;於縱向彈性模數大於250 GPa之情形時,難以獲得與閥座部12之良好密接性,故而欠佳。
與閥座部12接觸之隔膜8之表面和與隔膜8接觸之閥座部12相同地亦可使用經平坦加工者。例如較佳為將與閥座部12接觸之隔膜8之表面粗糙度Ra之值(JIS B0601:2001)設為0.1 μm以上、10 μm以下。再者,對隔膜8進行平坦加工之方法只要為可獲得特定之表面粗糙度者,則無特別限定。又,較佳為將隔膜8之厚度例如設為0.1 mm以上、0.5 mm以下,而具有特定之強度。
又,就提昇閥裝置之接觸氣體部之耐腐蝕性的觀點而言,亦可進行氟鈍化處理。此處所謂氟鈍化處理,係指導入氟氣,預先於材料之表面生成氟化合物之處理,可藉由氟化處理於材料之表面形成較薄之氟化合物,藉此提昇對氟之耐腐蝕性。
以下,藉由實施例詳細地說明本發明,但本發明並不限定於該等實施例。
為了調查本發明之實施形態之閥1之氣密性,而使用稀釋氟氣作為鹵素氣體,進行閥1之反覆開閉試驗。各實施例之詳情如下。再者,開閉閥1之隔膜8的閥桿9之驅動部10係使用利用空氣壓力之空氣壓驅動方式者。又,所謂輥磨光加工,係指通常公知之方法,使用輥於不去除表面層之情況下,加壓摩擦去除金屬等之表面之凹凸而使其變得平滑的方法。
[實施例1]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05c
m2
、表面粗糙度Ra值成為0.8 μm、曲率半徑R成為200 mm之SUS304製之外殼(閥本體),與接觸氣體面之表面積Sa為2.25 cm2
之鎳鉻合金製之隔膜(縱向彈性模數207 GPa)之隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器中填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[實施例2]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.02 cm2
、表面粗糙度Ra值成為0.8μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜(縱向彈性模數為205 GPa)的隔膜閥連接於47 L之Mn鋼製容器上,於14.7 MPaG之壓力下向該容器中填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體填充至隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[實施例3]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.0065 cm2
、表面粗糙度Ra值成為0.8 μm、曲率半徑R成為200 mm之SUS316製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜(縱向彈性模數205 GPa)的隔膜閥連接於47 L之Mn鋼製容器上,於14.7 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[實施例4]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05 cm2
、表面粗糙度Ra值成為0.2 μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜(縱向彈性模數為205 GPa)的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器中填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[實施例5]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05 cm2
、表面粗糙度Ra值成為8.0 μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器中填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[實施例6]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05 cm2
、表面粗糙度Ra值成為0.8 μm、曲率半徑R成為350 mm之SUS304製之外殼(閥本體),與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜(縱向彈性模數為207 GPa)的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果確認洩漏量為1×10-8
Pam3
/s以下,而無洩漏。
[比較例1]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05 cm2
、表面粗糙度Ra值成為20.0 μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之鎳鉻合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果洩漏量為3.5×10-2
Pam3
/s,氣密不良。
[比較例2]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.05 cm2
、表面粗糙度Ra值成為8.0 μm、曲率半徑R成為50 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之鎳鉻合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果洩漏量為1.3×10-1
Pam3
/s,氣密不良。
[比較例3]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.0025 cm2
、表面粗糙度Ra值成為0.8 μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.5 cm2
之鎳鉻合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果洩漏量為7×10-8
Pam3
/s,未獲得充分之氣密性。
[比較例4]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.25 cm2
、表面粗糙度Ra值成為8.0 μm、曲率半徑R成為200 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之赫史特合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於10.0 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果洩漏量為2×10-8
Pam3
/s,未獲得充分之氣密性。
[比較例5]
將具有藉由輥磨光加工使閥座部之表面積Sb成為0.4 cm2
、表面粗糙度Ra值成為0.8 μm、曲率半徑R成為50 mm之SUS304製之外殼,與接觸氣體面之表面積Sa為2.25 cm2
之鎳鉻合金製之隔膜的隔膜閥連接於47 L之Mn鋼製容器上,於14.7 MPaG之壓力下向該容器內填充20% F2
/N2
氣體。填充後,將隔膜閥連接於可真空置換之氣體設備上,藉由閥之開閉將氣體封入隔膜閥內,其後關閉閥反覆進行3000次真空置換之操作。試驗結束後,將容器置換為5.0 MPaG之氦氣,藉由測漏儀測量洩漏量,結果洩漏量為1.5×10-1
Pam3
/s,氣密不良。
將以上之試驗結果示於表1。
於實施例1~6中,閥座部接觸部之表面粗糙度Ra、閥座部之曲率半徑R、及隔膜之接觸氣體部表面積Sa和隔膜與閥座部之接觸面積Sb之面積比Sb/Sa均處於本發明之範疇內,獲得充分之氣密性。
另一方面,由比較例1可知,於閥座部接觸部之表面粗糙度Ra處於本發明之範疇外之情形時,無法獲得充分之氣密性。由比較例2可知,於閥座部之曲率半徑R處於本發明之範疇外之情形時,無法獲得充分之氣密性。又,由比較例3~5可知,於隔膜之接觸氣體部表面積Sa和隔膜與閥座部之接觸面積Sb之面積比Sb/Sa處於本發明之範疇外之情形時,產生氣密不良。
如上所述,本發明之閥具有充分之氣密性,可適宜地用作鹵素氣體或鹵素化合物氣體用之填充容器用閥。
以上,對本發明之實施形態進行了說明,當然可於不脫離本發明之主旨之範圍內,基於業者通常之知識,對以下之實施形態進行適當變更、改良。
1...閥
2...閥本體
3...支撐螺釘
4...氣體填充容器
5...入口通道
6...出口通道
7...閥室
8...隔膜
9...閥桿
10...驅動部
11...閥蓋
12...閥座部
12a...閥座部接觸面
A...閥室附近
R...曲率半徑
G...箭頭
Sa...接觸氣體面之表面積
Sb...閥座部之表面積
圖1係本發明之實施形態之閥之整體圖。
圖2係圖1之閥之閥室附近之放大圖。
圖3係圖1之閥之閥室之橫截平面圖1。
圖4係圖1之閥之閥室之橫截平面圖2。
8...隔膜
9...閥桿
11...閥蓋
12...閥座部
A...閥室附近
R...曲率半徑
Claims (4)
- 一種直接接觸型隔膜閥,其特徵在於:具備設置有入口通道及出口通道且其內部流通鹵素氣體或鹵素化合物氣體之閥本體、與閥本體之入口通道及出口通道連通之閥室、設置於入口通道之內端開口部之閥座部、設置於閥座部之上方而保持閥室內之氣密同時開閉入口通道及出口通道之隔膜、使隔膜之中央部下降至下方之閥桿、使閥桿向上下方向移動之驅動部;於閥座部與隔膜之接觸面上,閥座部之接觸面之表面粗糙度Ra之值為0.1 μm以上、10.0 μm以下,閥座部之接觸面之曲率半徑R為100 mm以上、1000 mm以下,隔膜之接觸氣體部表面積Sa和隔膜與閥座部之接觸面積Sb之面積比率Sb/Sa為0.2%以上、10%以下。
- 如請求項1之直接接觸型隔膜閥,其中隔膜之縱向彈性率為150 GPa以上、250 GPa以下。
- 如請求項1或2之直接接觸型隔膜閥,其中流通閥本體之鹵素氣體為氟氣,其係安裝至以氟氣之濃度為20體積%以上、100體積%以下且壓力為0 MPaG以上、14.7 MPaG以下進行填充之高壓氣體填充容器上。
- 一種高壓氣體填充容器,其具有請求項1至3中任一項之直接接觸型隔膜閥。
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JP2011020867A JP5153898B2 (ja) | 2010-04-28 | 2011-02-02 | ハロゲンガス又はハロゲン化合物ガスの充填容器用バルブ |
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EP (1) | EP2565501B1 (zh) |
JP (1) | JP5153898B2 (zh) |
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US11519557B2 (en) | 2017-08-01 | 2022-12-06 | Central Glass Company, Limited | Method for manufacturing filled container, and filled container |
US10774938B2 (en) * | 2017-11-09 | 2020-09-15 | Swagelok Company | Diaphragm valve with metal seat |
US11143318B2 (en) * | 2018-03-19 | 2021-10-12 | Hitachi Metals, Ltd. | Diaphragm valve and mass flow controller using the same |
CN109442042B (zh) * | 2018-10-19 | 2023-10-31 | 杭州加一包装技术有限责任公司 | 一种用于粉体环境下的机械部件气体密封结构 |
US20200203127A1 (en) * | 2018-12-20 | 2020-06-25 | L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Systems and methods for storage and supply of f3no-free fno gases and f3no-free fno gas mixtures for semiconductor processes |
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CN102884348B (zh) | 2014-03-19 |
JP2011247407A (ja) | 2011-12-08 |
KR101412701B1 (ko) | 2014-06-26 |
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EP2565501B1 (en) | 2017-10-11 |
CN102884348A (zh) | 2013-01-16 |
EP2565501A4 (en) | 2017-01-25 |
WO2011135928A1 (ja) | 2011-11-03 |
EP2565501A1 (en) | 2013-03-06 |
KR20120139806A (ko) | 2012-12-27 |
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US20130032600A1 (en) | 2013-02-07 |
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