TWI383988B - 新型釕金屬錯合物及用此錯合物製作之光電元件 - Google Patents

新型釕金屬錯合物及用此錯合物製作之光電元件 Download PDF

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TWI383988B
TWI383988B TW098134108A TW98134108A TWI383988B TW I383988 B TWI383988 B TW I383988B TW 098134108 A TW098134108 A TW 098134108A TW 98134108 A TW98134108 A TW 98134108A TW I383988 B TWI383988 B TW I383988B
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dye
metal complex
sensitized solar
bipyridine
benzyl
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TW201113291A (en
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Chiu Ming Hung
li ya Huang
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Everlight Chem Ind Corp
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Priority to GB1016729A priority patent/GB2474346A/en
Priority to AU2010227029A priority patent/AU2010227029B2/en
Priority to DE102010042208A priority patent/DE102010042208A1/de
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Description

新型釕金屬錯合物及用此錯合物製作之光電元件
本發明係關於一種釕金屬錯合物及用此錯合物製作之光電元件，特別是一種適用於染料敏化太陽能電池(Dye-Sensitized Solar Cell,DSC)之釕金屬錯合物及染料敏化太陽能電池。
隨著人類文明發展，全球面臨嚴重的能源危機及環境污染等問題，以光電太陽能電池將太陽能直接轉變成能源，是解決全世界能源危機及降低環境污染的重要方法之一；其中染料敏化太陽能電池因其製造成本低、可製成大尺度面積、具有可撓性及透光性與可用於建築物上等優異特性，而成為一種有前景的新型太陽能電池。
近年，等人發表一系列染料敏化太陽能電池相關文獻(例如O’Regan,B.;,M.Nature 1991 ,353 ,737)顯示染料敏化太陽能電池具有實用性。一般而言，染料敏化太陽能電池的結構包括有陰/陽電極、奈米二氧化鈦、染料及電解質；其中染料對電池效率有關鍵性的影響，理想的染料要具有可以吸收較大範圍的太陽光譜、高莫耳吸收係數(absorption coefficient)、高溫安定性及光安定性等。
實驗室發表了一系列釕錯合物作為染料敏化太陽能電池中的染料。1993年實驗室發表使用N3染料所製備之染料敏化太陽能電池，其效率達10.0%(AM 1.5)。N3染料的單波光之光電流轉換效率(IPCE)值在400nm~600nm範圍可達80%，而其後所開發的數百種釕錯合物染料，其效能測試皆無法超越N3染料。N3染料之結構如下式(a)所示。
直至2003年實驗室再發表使用N719染料所製備之染料敏化太陽能電池，其效率提升到10.85%(AM 1.5)。N719染料之結構如下式(b)所示。
而後2004年同實驗室發表使用黑染料(Black dye)所製備之染料敏化太陽能電池，其效率則達到11.04%(AM 1.5)。黑染料可強化紅光區和紅外光區的光譜應答，從而提昇染料敏化太陽能電池的效能。黑染料之結構如下式(c)所示。
除了實驗室發表之N3染料、N719染料與黑染料等相關系列之釕錯合物之外，其他類似的有鉑錯合物、鋨錯合物、鐵錯合物、銅錯合物...等等。但是許多研究都顯示釕錯合物的效率仍為較佳。
由於染料敏化太陽能電池中的染料對電池效率有關鍵性的影響。因此，尋找可以提高染料敏化太陽能電池效率的染料分子，是改善染料敏化太陽能電池效率的重要方法之一。
本發明提供一種新型釕金屬錯合物，其適用於染料敏化太陽能電池，可以增加染料敏化太陽能電池之光電效率。
本發明另提供一種染料敏化太陽能電池，其有較高的光電效率。
本發明之釕金屬錯合物，其結構如下式(I)：RuL1 L2 (NCS)2 Am (I)其中L1 為2,2’-雙吡啶-4,4’-二甲酸(2,2’-bipyridyl-4,4’-dicarboxylic acid)、2,2’-雙吡啶-4,4’-二磺酸(2,2’-bipyridyl-4,4’-disulfonic acid)或2,2’-雙吡啶-4,4’-二磷酸(2,2’-bipyridyl-4,4’-diphosphonic acid)；L2 為2,2’-雙吡啶-4,4’-二壬烷(2,2’-bipyridyl-4,4’-dinonyl)或2,2’-雙吡啶-4,4’-雙十三烷(2,2’-bipyridine-4,4’-ditridecyl)；A為X+ R1 R2 R3 R4 、 ，其中，X為N或P，R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基(alkyl)、苯基(phenyl)或苯甲基(benzyl)，R5 為C1-20 烷基；m為1或2。
於上述式(I)中L1 可為2,2’-雙吡啶-4,4’-二甲酸、2,2’-雙吡啶-4,4’-二磺酸或2,2’-雙吡啶-4,4’-二磷酸。較佳的，L1 為2,2’-雙吡啶-4,4’-二甲酸。
於上述式(I)中L2 可為2,2’-雙吡啶-4,4’-二壬烷、2,2’-雙吡啶-4,4’-雙十三烷；較佳的，L1 為2,2’-雙吡啶-4,4’-二壬烷。
於上述式(I)中，A可為X+ R1 R2 R3 R4 、 ，其中，X為N或P，R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基，R5 為C1-20 烷基；較佳的，A為P+ R1 R2 R3 R4 ，其中R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；更佳的，A為N+ R1 R2 R3 R4 ，其中R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；最佳的，A為N+ R1 R2 R3 R4 ，其中R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基。
於上述式(I)中，m可為1至2的整數；較佳的，m為1的整數。
上述式(I)之釕金屬錯合物具體實例有：
(I-5)
另一方面，本發明亦提供一種染料敏化太陽能電池，其含有上述之釕金屬錯合物。
本發明之染料敏化太陽能電池，包括：(a)含有上述釕金屬錯合物之光電陽極(photoanode)；(b)陰極(cathode)；以及(c)位於光電陽極及陰極之間的電解質層(electrolyte layer)。
於本發明之染料敏化太陽能電池中，光電陽極包括有：透明基板、透明導電膜、多孔性半導體膜、以及釕金屬錯合物染料。
於本發明之染料敏化太陽能電池中，光電陽極之透明基板之材質並無特別限制，只要是透明的基材均可使用。較佳地，透明基板之材質為對於由染料敏化太陽能電池外部侵入之水分或氣體具有良好的遮斷性、耐溶劑性、耐候性等之透明基材。透明基板之具體列舉，包括有：石英、玻璃等透明無機基板；聚乙烯對苯二甲酸酯(PET)、聚(萘二甲酸乙二酯)(PEN)、聚碳酸酯(PC)、聚乙烯(PE)、聚丙烯(PP)、聚醯亞胺(PI)等透明塑膠基板，但是，並非限定於這些。此外，透明基板之厚度並無特別限制，可依照透光率、 染料敏化太陽能電池特性要求而自由選擇。較佳的，透明基板之材質為玻璃。
此外，於本發明之染料敏化太陽能電池中，透明導電膜的材料可為氧化銦錫(ITO)、氟摻雜的氧化錫(FTO)、氧化鋅-三氧化二鎵(ZnO-Ga2 O3 )、氧化鋅-三氧化二鋁(ZnO-Al2 O3 )、或以鍚(Sn)為基礎的氧化物材料。
再者，於本發明之染料敏化太陽能電池中，多孔性半導體膜可用半導體微粒所製成。適當的半導體微粒可包括：矽、二氧化鈦、二氧化錫、氧化鋅、三氧化鎢、五氧化二鈮、三氧化鈦鍶、及其組合；較佳的，半導體微粒是二氧化鈦。半導體微粒的平均粒徑為5至500奈米，較佳的為10至50奈米。多孔性半導體膜的厚度為5~25微米。
於本發明之染料敏化太陽能電池中，釕金屬錯合物染料如上所述之釕金屬錯合物。
此外，作為染料敏化太陽能電池之陰極材料並無特別限制，可包括任何具有傳導性之材料。或者，陰極材料也可以是一絕緣材料，只要有傳導層形成於朝向光電陽極的表面上。電化學穏定的物質就可作為陰極，且適用於陰極材料的非限制實例包括：鉑、金、碳、及其相似物。
再者，作為染料敏化太陽能電池之電解質層並無特別限制，可包括任何具有電子及/或電洞傳導性之基材。
另一方面，本發明更提供一種染料溶液，其含有上述之釕金屬錯合物。
本發明之染料溶液中，係包含：(A)含量為0.01~1重量百分比之上述釕金屬錯合物；以及(B)含量為99~99.99重量百分比之有機溶劑，其中，有機溶劑係選自由乙腈、甲醇、乙醇、丙醇、丁醇、二甲基甲醯胺、及N-甲基吡咯烷酮所組成之群組。
本發明之釕金屬錯合物可以下列方式合成。
順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthen-ium(II)，Z907 dye)依照Nature Material, 2003 ,2 ,402-407的方法合成。
將順 -二硫氰基2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)分散於去離子水中，滴入10%氫氧化四丁基胺(tetrabutylammonium hydroxide)水溶液至反應液中，使pH值大約落在11左右，持續攪拌直到釕金屬錯合物完全溶於水中，再用0.1 M的硝酸(nitric acid)水溶液調整pH值到4.6，即可得到式(I-1)之釕金屬錯合物。
本發明之染料敏化太陽能電池的製造方法並無特別限制，可用一般已知的方法製造。
透明基板之材質並無特別限制，只要是透明的基材均可使用。較佳地，透明基板之材質為對於由染料敏化太陽能電池外部侵入之水分或氣體具有良好的遮斷性、耐溶劑 性、耐候性等之透明基材，具體列舉，有石英、玻璃等透明無機基板，聚乙烯對苯二甲酸酯(PET)、聚(萘二甲酸乙二酯)(PEN)、聚碳酸酯(PC)、聚乙烯(PE)、聚丙烯(PP)、聚醯亞胺(PI)等透明塑膠基板，但是，並非限定於這些。透明基板之厚度並無特別限制，可以藉由透光率、染料敏化太陽能電池特性要求而自由選擇。在一具體實施例中，透明基板是使用玻璃基板。
透明導電膜的材料可以選自氧化銦錫(ITO)、氟摻雜的氧化錫(FTO)、氧化鋅-三氧化二鎵(ZnO-Ga2 O3 )、氧化鋅-三氧化二鋁(ZnO-Al2 O3 )、以及鍚為基礎的氧化物材料。在一具體實施例中，透明導電膜是使用氟摻雜的氧化錫。
多孔性半導體膜是用半導體微粒所製成。適當的半導體微粒包括有矽、二氧化鈦、二氧化錫、氧化鋅、三氧化鎢、五氧化二鈮、三氧化鈦鍶及其組合。首先，先將半導體微粒配製成糊狀物，再將其塗佈到透明導電基板上，塗佈方法可用刮墨刀、網印、旋轉塗佈、噴灑等或一般濕式塗佈。此外，為了得到適當的膜厚，可以塗佈一次或多次。半導體膜層可以為單層或多層，多層是指各層使用不同粒徑的半導體微粒。例如，可先塗佈粒徑為5至50奈米的半導體微粒，其塗佈厚度為5至20微米，然後再塗佈粒徑為200至400奈米的半導體微粒，其塗佈厚度為3至5微米。然後在50至100℃乾燥後，再於400至500℃燒結30分鐘可製得一多層半導體膜層。
釕金屬錯合物染料可以溶於適當的溶劑配製成染料溶液。適當的溶劑包括有乙腈、甲醇、乙醇、丙醇、丁醇、二甲基甲醯胺、N-甲基吡咯烷酮或其混合物，但是，並非限定於這些。在此，將塗佈有半導體膜的透明基板浸泡到染料溶液中，讓其充分吸收染料溶液中的染料，並於染料吸收完成後取出乾燥，可製得一染料敏化太陽能電池之光電陽極。
作為陰極的材料並無特別限制，可包括任何具有傳導性之材料。或者，陰極材料也可以是一絕緣材料，只要有傳導層形成於朝向光電陽極的表面上。此外，電化學穏定的物質就可作為陰極，且適用於陰極材料的非限制實例包括：鉑、金、碳、及其相似物。
電解質層並無特別限制，可以包括任何具有電子及/或電洞傳導性之基材。另外，液態電解質可以是含碘的乙腈溶液、含碘的N-甲基吡咯烷酮溶液、或含碘的3-甲氧基丙腈溶液。在一具體實例中，液態電解質為一含有碘的乙腈溶液。
本發明之染料敏化太陽能電池一具體製造方式如下。
首先，將包括具有粒徑為20~30奈米(nm)之氧化鈦微粒的糊狀物，藉由一次或數次的網印塗佈在覆蓋有氟摻雜的氧化錫(FTO)玻璃板上，而後在450℃燒結30分鐘。
將釕金屬錯合物溶於乙腈(acetonitrile)及三級 -丁醇(t -butanol)的混合液1/1(v/v)中，配成釕金屬錯合物染料溶液。接著，將上述含有多孔氧化鈦膜的玻璃板浸泡在染料 溶中，讓其吸收染料溶液中的染料後，取出乾燥即可得到一光電陽極(photoanode)。
將覆蓋有氟摻雜的氧化錫玻璃板鑽一直徑為0.75毫米之注入口，以備注入電解質用。再將氯化鉑酸(H2 PtCl6 )溶液塗佈在覆蓋有氟摻雜的氧化錫玻璃板上，然後加熱到400℃處理15分鐘即可得到一陰極(cathode)。
然後，將厚度60微米的熱塑性聚合物膜配置在光電陽極和陰極之間，在120至140℃下施加壓力於此二電極，以黏合此兩電極。
將電解液(0.03 M I2 /0.3 M LiI/0.5 M三級丁基吡啶的乙腈溶液)注入，再用熱塑性聚合物膜將注入口密封，即可得到本發明之染料敏化電池。
以下實例僅用以說明本發明，本發明之申請專利範圍並不會因此而受限制。若無特別註明，則溫度為攝氏溫度，份數及百分比係以重量計。重量份數和體積份數之關係就如同公斤和公升之關係。
實施例1
合成順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(四丁基銨)(cis -di(thiocyanato(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)(tetrabutylammonium))(I-1)
將1份順 -二硫氰基2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’- dinonyl)ruthenium(II)，Z907 dye)(依照Nature Material, 2003 ,2 ,402-407的方法合成)以及10份離子水加入反應瓶中攪拌分散，再滴入10%氫氧化四丁基胺(tetrabutylammonium hydroxide)水溶液至反應液中，使pH值大約落在11左右，持續攪拌直到釕金屬錯合物完全溶於水中，再用0.1 M的硝酸(nitric acid)水溶液調整pH值到4.6，攪拌18小時後以燒結玻璃過濾器(sintered glass filter)過濾收集產物，並用5份pH 4.1的蒸餾水沖洗產物，得到式(I-1)之黑色固體產物0.43份，產率85%。
實施例2
合成順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)雙(四丁基銨)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)bis(tetrabutylammonium))(I-2)
將1份順 -二硫氰基2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)，Z907 dye)(依照Nature Material, 2003 ,2 ,402-407的方法合成)以及10份離子水加入反應瓶中攪拌分散，再滴入10%氫氧化四丁基胺(tetrabutylammonium hydroxide)水溶液至反應液中，使pH值大約落在11左右，持續攪拌直到釕金屬錯合物完全溶於水中，再用0.1 M的硝酸(nitric acid)水溶液調整pH值到 5.5，攪拌18小時後以燒結玻璃過濾器(sintered glass filter)過濾收集產物，並用5份pH 4.1的蒸餾水沖洗產物，得到式(I-2)之黑色固體產物0.44份，產率70%。
實施例3
合成順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(苯甲基三乙基銨)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)(benzyltriethyl ammonium))(I-3)
同實施例1之相同步驟製備本實施例之化合物，除了使用5份去離子水與5份甲醇取代10份離子水進行攪拌分散與使用氫氧化苯甲基三乙基銨(benzyltriethylammonium hydroxide)水溶液(TCI Co.,Ltd.,)取代氫氧化四丁基胺水溶液。得到式(I-3)之黑色固體產物0.35份，產率71%。
實施例4
合成順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(四丁基磷)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)(tetrabutylphosphonium))(I-4)
同實施例1之相同步驟製備本實施例之化合物，除了使用5份去離子水與5份甲醇取代10份離子水進行攪拌分散與使用氫氧化四丁基磷(tetrabutylphosphonium hydroxide)水溶液取代氫氧化四丁基胺水溶液。得到式(I-4)之黑色固 體產物0.42份，產率81%。
實施例5
合成順 -二硫氰基(2,2’-雙吡啶-4,4’-二甲酸基)(2,2’-雙吡啶-4,4’-二壬烷)釕(II)(1-十二烷基吡啶)(cis -di(thiocyanato)(2,2’-bipyridyl-4,4’-dicarboxylic acid)(2,2’-bipyridyl-4,4’-dinonyl)ruthenium(II)(1-dodecyl pyridinium))(I-5)
同實施例1之相同步驟製備本實施例之化合物，除了使用10份去離子水與5份甲醇取代10份離子水進行攪拌分散與除了使用氫氧1-十二烷基吡啶(1-dodecylpyridin-ium hydroxide)水溶液(用氯化1-十二烷基吡啶試劑(1-dodecylpyridinium chloride reagent,ALDRICH,98%)所配製)取代氫氧化四丁基胺水溶液。得到式(I-5)之黑色固體產物0.32份，產率63%。
實施例6 製造染料敏化太陽能電池
將包括具有粒徑為20~30奈米(nm)之氧化鈦微粒的糊狀物，藉由一次或數次的網印塗佈在覆蓋有氟摻雜的氧化錫(FTO)玻璃板上(厚度4 mm，電阻10Ω)，使得燒結後的多孔氧化鈦膜的厚度為10至12微米(μm)，而後在450℃燒結30分鐘。
將實施例1之釕金屬錯合物溶於乙腈(acetonitrile)及三級 -丁醇(t -butanol)的混合液1：1(v/v)中，配成釕金屬錯合 物濃度為0.5 M的染料溶液，接著，將上述含有多孔氧化鈦膜的玻璃板浸泡在染料溶中，讓其吸收染料溶液中的染料16至24小時後，取出乾燥即可得到一光電陽極(photoanode)。
將覆蓋有氟摻雜的氧化錫玻璃板鑽一直徑為0.75毫米，以備注入電解質用，再將氯化鉑酸(H2 PtCl6 )溶液(1毫升的乙醇中含有2毫克的鉑)塗佈在氧化錫玻璃板上，然後加熱到400℃處理15分鐘即可得到一陰極(cathode)。
將厚度60微米的熱塑性聚合物膜配置在光電陽極和陰極之間，在120至140℃下施加壓力於此二電極，以黏合該兩電極。
將電解液(0.03 M I2 /0.3 M LiI/0.5 M三級丁基吡啶的乙腈溶液)注入，再用熱塑性聚合物膜將注入口密封，可得本實施例之染料敏化太陽能電池。
實施例7 製造染料敏化太陽能電池
同實施例6之相同步驟製備本實施例之染料敏化太陽能電池，除了使用實施例2之釕金屬錯合物取代實施例1之釕金屬錯合物。
實施例8 製造染料敏化太陽能電池
同實施例6之相同步驟製備本實施例之染料敏化太陽能電池，除了使用實施例3之釕金屬錯合物取代實施例1 之釕金屬錯合物。
實施例9 製造染料敏化太陽能電池
同實施例6之相同步驟製備本實施例之染料敏化太陽能電池，除了使用實施例4之釕金屬錯合物取代實施例1之釕金屬錯合物。
比較例
同實施例6之相同步驟製備染料敏化太陽能電池，除了使用Z907取代實施例1之釕金屬錯合物。
測試方法與結果 光電效率測試
將實施例6至10及比較例之染料敏化太陽能電池在AM 1.5的照明下，測試其短路電流(JSC )、開路電壓(VOC )、填充因子(FF)、光電轉換效率(η)及單波光光電流轉換效率(Incident Photon to Current Conversion Efficiency，IPCE)。測試結果整理如下表1：
由表1之測試結果顯示，用本發明實施例之釕金屬錯合物所製作的染料敏化太陽能電池，與比較例用Z907所製作的染料敏化太陽能電池相比，本發明之釕金屬錯合物可以提高染料敏化太陽能電池之短路電流、開路電壓及填充因子，因而增加染料敏化太陽能電池的光電轉換效率。
綜上所述，本發明無論就目的、手法及功效，或就其技術層面與研發設計上，再再均顯示其迥異於習知技術之特徵。惟應注意的是，上述諸多實施例僅係為了便於說明故舉例闡述之，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神及範圍內，當可作些許之更動與潤飾，因此本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。
上述實施例僅係為了方便說明而舉例而已，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。

Claims (9)

  1. 一種釕金屬錯合物，其結構如下式(I)：RuL1 L2 (NCS)2 Am (I)其中L1 為2,2’-雙吡啶-4,4’-二甲酸；L2 為2,2’-雙吡啶-4,4’-二壬烷； A為X+ R1 R2 R3 R4 、 ，其中當X為N，R1 為苯甲基，且R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；當X為P，R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；且R5 為C1-20 烷基；m為1或2。
  2. 如申請專利範圍第1項所述之釕金屬錯合物，其中A為N+ R1 R2 R3 R4 ，R1 為苯甲基，且R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基。
  3. 如申請專利範圍第1項所述之釕金屬錯合物，其中A為且R5 為C1-20 烷基。
  4. 如申請專利範圍第1項所述之釕金屬錯合物，其中m為1。
  5. 如申請專利範圍第1項所述之釕金屬錯合物，其該釕金屬錯合物是一種用於染料敏化太陽能電池之染料化合物。
  6. 一種釕金屬錯合物，其結構如下下式(I-3)或下式(I-4)。
  7. 如申請專利範圍第6項所述之釕金屬錯合物，其該釕金屬錯合物是一種用於染料敏化太陽能電池之染料化合物。
  8. 一種染料敏化太陽能電池，其包括：(a)一光電陽極，其包括一如下式(I)之釕金屬錯合物；RuL1 L2 (NCS)2 Am (I)其中L1 為2,2’-雙吡啶-4,4’-二甲酸；L2 為2,2’-雙吡啶-4,4’-二壬烷；A為X+ R1 R2 R3 R4 、 ，其中當X為N，R1 為苯甲基，且R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；當X為P，R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；且R5 為C1-20 烷基；m為1或2；(b)一陰極；以及(c)一電解質層，其在光電陽極與陰極間。
  9. 一種染料溶液，其包括：(A)一如下式(I)之釕金屬錯合物，其含量為0.01~1重量百分比：RuL1 L2 (NCS)2 Am (I)其中L1 為2,2’-雙吡啶-4,4’-二甲酸；L2 為2,2’-雙吡啶-4,4’-二壬烷；A為X+ R1 R2 R3 R4 、 ，其中當X為N，R1 為苯甲基，且R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；當X為P，R1 、R2 、R3 、及R4 各自獨立分別為C1-20 烷基、苯基或苯甲基；且R5 為C1-20 烷基；m為1或2；以及(B)一種有機溶劑，其含量為99.99~99重量百分比，且該有機溶劑係選自由：乙腈、甲醇、乙醇、丙醇、丁醇、二甲基甲醯胺、及N-甲基吡咯烷酮所組成之群組。
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AU2010227029A AU2010227029B2 (en) 2009-10-08 2010-10-07 Novel ruthenium complex and photoelectric component using the same
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