TWI375251B - Multi-layer overlay measurement and correction technique for ic manufacturing - Google Patents
Multi-layer overlay measurement and correction technique for ic manufacturing Download PDFInfo
- Publication number
- TWI375251B TWI375251B TW094106008A TW94106008A TWI375251B TW I375251 B TWI375251 B TW I375251B TW 094106008 A TW094106008 A TW 094106008A TW 94106008 A TW94106008 A TW 94106008A TW I375251 B TWI375251 B TW I375251B
- Authority
- TW
- Taiwan
- Prior art keywords
- overlay
- wafer
- layers
- error
- coverage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
- H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Data Mining & Analysis (AREA)
- Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/790,296 US7065737B2 (en) | 2004-03-01 | 2004-03-01 | Multi-layer overlay measurement and correction technique for IC manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200534362A TW200534362A (en) | 2005-10-16 |
| TWI375251B true TWI375251B (en) | 2012-10-21 |
Family
ID=34887442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094106008A TWI375251B (en) | 2004-03-01 | 2005-03-01 | Multi-layer overlay measurement and correction technique for ic manufacturing |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7065737B2 (https=) |
| JP (1) | JP2007528126A (https=) |
| KR (1) | KR101187061B1 (https=) |
| CN (1) | CN1926677A (https=) |
| DE (1) | DE112005000504B4 (https=) |
| GB (1) | GB2427268B (https=) |
| TW (1) | TWI375251B (https=) |
| WO (1) | WO2005086223A2 (https=) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7333173B2 (en) * | 2004-04-06 | 2008-02-19 | Taiwan Semiconductor Manufacturing Company | Method to simplify twin stage scanner OVL machine matching |
| US7337425B2 (en) * | 2004-06-04 | 2008-02-26 | Ami Semiconductor, Inc. | Structured ASIC device with configurable die size and selectable embedded functions |
| US7733906B2 (en) * | 2005-06-30 | 2010-06-08 | Intel Corporation | Methodology for network port security |
| KR100689709B1 (ko) * | 2005-08-10 | 2007-03-08 | 삼성전자주식회사 | 반도체 디바이스 제조를 위한 오버레이 마크 및 이를이용한 오버레이 측정방법 |
| US7474401B2 (en) * | 2005-09-13 | 2009-01-06 | International Business Machines Corporation | Multi-layer alignment and overlay target and measurement method |
| JP2007324371A (ja) * | 2006-06-01 | 2007-12-13 | Ebara Corp | オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク |
| US20080018897A1 (en) * | 2006-07-20 | 2008-01-24 | Nanometrics Incorporated | Methods and apparatuses for assessing overlay error on workpieces |
| TWI302341B (en) * | 2006-08-04 | 2008-10-21 | Nanya Technology Corp | Improved overlay mark |
| KR100834832B1 (ko) * | 2006-11-29 | 2008-06-03 | 삼성전자주식회사 | 오버레이 계측설비를 이용한 패턴의 임계치수 측정방법 |
| US7924408B2 (en) * | 2007-02-23 | 2011-04-12 | Kla-Tencor Technologies Corporation | Temperature effects on overlay accuracy |
| US7599063B2 (en) * | 2007-03-29 | 2009-10-06 | Macronix International Co., Ltd. | Method for checking alignment accuracy using overlay mark |
| NL1036180A1 (nl) * | 2007-11-20 | 2009-05-25 | Asml Netherlands Bv | Stage system, lithographic apparatus including such stage system, and correction method. |
| KR20090128337A (ko) * | 2008-06-10 | 2009-12-15 | 어플라이드 머티리얼즈 이스라엘 리미티드 | 반복 패턴을 갖는 물체를 평가하는 방법 및 시스템 |
| JP5259380B2 (ja) * | 2008-12-24 | 2013-08-07 | 株式会社東芝 | 半導体装置の製造方法 |
| US8449752B2 (en) * | 2009-09-30 | 2013-05-28 | HGST Netherlands B.V. | Trailing plated step |
| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US8336011B2 (en) * | 2011-02-07 | 2012-12-18 | GlobalFoundries, Inc. | Methods for fabricating an electrically correct integrated circuit |
| NL2008168A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus. |
| JP5731864B2 (ja) * | 2011-03-18 | 2015-06-10 | 株式会社Screenホールディングス | 描画データの補正装置および描画装置 |
| US9349660B2 (en) * | 2011-12-01 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit manufacturing tool condition monitoring system and method |
| US8908181B2 (en) | 2012-06-28 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Overlay mark and method of measuring the same |
| US10132763B2 (en) | 2012-07-23 | 2018-11-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic system and device manufacturing method |
| US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| JP5965819B2 (ja) * | 2012-10-26 | 2016-08-10 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び重ね合わせずれ量測定方法 |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| US9760020B2 (en) * | 2012-11-21 | 2017-09-12 | Kla-Tencor Corporation | In-situ metrology |
| US9081287B2 (en) * | 2012-12-20 | 2015-07-14 | Kla-Tencor Corporation | Methods of measuring overlay errors in area-imaging e-beam lithography |
| US9052595B2 (en) * | 2013-03-15 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography process |
| US9029810B2 (en) | 2013-05-29 | 2015-05-12 | Kla-Tencor Corporation | Using wafer geometry to improve scanner correction effectiveness for overlay control |
| WO2014193983A1 (en) * | 2013-05-29 | 2014-12-04 | Kla-Tencor Corporation | Multi-layered target design |
| US9214317B2 (en) | 2013-06-04 | 2015-12-15 | Kla-Tencor Corporation | System and method of SEM overlay metrology |
| KR102574171B1 (ko) | 2014-08-29 | 2023-09-06 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법, 타겟 및 기판 |
| WO2016037003A1 (en) | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| KR102287757B1 (ko) * | 2015-05-26 | 2021-08-09 | 삼성전자주식회사 | 오버레이 교정 데이터를 수정하는 방법 |
| KR101564312B1 (ko) * | 2015-07-07 | 2015-10-29 | (주)오로스 테크놀로지 | 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법 |
| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| CN106547171B (zh) * | 2015-09-17 | 2019-01-18 | 上海微电子装备(集团)股份有限公司 | 一种用于光刻装置的套刻补偿系统及方法 |
| US9470987B1 (en) | 2015-10-22 | 2016-10-18 | United Microelectronics Corp. | Overlay mask |
| CN105337878A (zh) * | 2015-12-10 | 2016-02-17 | 成都捷科菲友信息技术有限公司 | 一种按压吸附式无影照明路由器 |
| CN105323181A (zh) * | 2015-12-10 | 2016-02-10 | 成都捷科菲友信息技术有限公司 | 一种可安放于墙角处的无影照明吸附路由器 |
| US9633915B1 (en) * | 2016-03-01 | 2017-04-25 | Globalfoundries Inc. | Method of using dummy patterns for overlay target design and overlay control |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US10663286B2 (en) * | 2017-08-22 | 2020-05-26 | Kla-Tencor Corporation | Measuring thin films on grating and bandgap on grating |
| CN112514039B (zh) * | 2018-07-30 | 2024-03-29 | 科磊股份有限公司 | 减少装置覆盖误差 |
| CN109753718B (zh) * | 2018-12-28 | 2023-09-05 | 山西潞安太阳能科技有限责任公司 | 一种基于最小二乘法的pecvd色差改善方法 |
| US11353799B1 (en) | 2019-07-23 | 2022-06-07 | Kla Corporation | System and method for error reduction for metrology measurements |
| TWI814909B (zh) * | 2019-09-27 | 2023-09-11 | 聯華電子股份有限公司 | 多層對位標記及其對位方法 |
| CN111761060B (zh) * | 2020-06-08 | 2022-03-29 | 湖南华曙高科技股份有限公司 | 应用于3d打印的风量控制方法、系统及可读存储介质 |
| US11726410B2 (en) * | 2021-04-20 | 2023-08-15 | Kla Corporation | Multi-resolution overlay metrology targets |
| US20230068016A1 (en) * | 2021-08-26 | 2023-03-02 | Kla Corporation | Systems and methods for rotational calibration of metrology tools |
| KR102871169B1 (ko) * | 2021-12-17 | 2025-10-14 | 케이엘에이 코포레이션 | 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계 |
| CN117957497A (zh) * | 2022-01-13 | 2024-04-30 | 科磊股份有限公司 | 使用小目标的叠加误差的校准测量 |
| CN114428445A (zh) * | 2022-01-27 | 2022-05-03 | 华虹半导体(无锡)有限公司 | 套刻误差量测方法和装置 |
| CN117012760A (zh) * | 2022-04-29 | 2023-11-07 | 联芯集成电路制造(厦门)有限公司 | 叠对标记 |
| CN117192902B (zh) * | 2022-05-31 | 2026-04-24 | 长鑫存储技术有限公司 | 套刻误差模型的构建方法和套刻校正方法 |
| KR20240108945A (ko) | 2023-01-03 | 2024-07-10 | 삼성전자주식회사 | 기판 검사 장치 및 기판 검사 방법 |
| WO2026015698A1 (en) * | 2024-07-10 | 2026-01-15 | Board Of Regents, The University Of Texas System | Methods for die-to-wafer and wafer-to-wafer bonding |
| CN119620564B (zh) * | 2025-02-13 | 2025-07-11 | 杭州电子科技大学 | 一种基于Halcon的晶圆套刻误差测量方法 |
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| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| US5545593A (en) * | 1993-09-30 | 1996-08-13 | Texas Instruments Incorporated | Method of aligning layers in an integrated circuit device |
| KR100468234B1 (ko) * | 1996-05-08 | 2005-06-22 | 가부시키가이샤 니콘 | 노광방법,노광장치및디스크 |
| JP3527063B2 (ja) * | 1997-06-04 | 2004-05-17 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
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| US7068833B1 (en) * | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| JP5180419B2 (ja) * | 2000-08-30 | 2013-04-10 | ケーエルエー−テンカー・コーポレーション | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US6766211B1 (en) * | 2000-10-03 | 2004-07-20 | International Business Machines Corporation | Structure and method for amplifying target overlay errors using the synthesized beat signal between interleaved arrays of differing periodicity |
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| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| US6486956B2 (en) * | 2001-03-23 | 2002-11-26 | Micron Technology, Inc. | Reducing asymmetrically deposited film induced registration error |
| US20020192577A1 (en) * | 2001-06-15 | 2002-12-19 | Bernard Fay | Automated overlay metrology system |
| US6768538B2 (en) * | 2001-11-02 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Photolithography system to increase overlay accuracy |
| KR100464854B1 (ko) * | 2002-06-26 | 2005-01-06 | 삼성전자주식회사 | 반도체 기판의 정렬 방법 및 정렬 장치 |
| US6888260B2 (en) * | 2003-04-17 | 2005-05-03 | Infineon Technologies Aktiengesellschaft | Alignment or overlay marks for semiconductor processing |
| US6937337B2 (en) * | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
-
2004
- 2004-03-01 US US10/790,296 patent/US7065737B2/en not_active Expired - Fee Related
-
2005
- 2005-02-26 GB GB0617132A patent/GB2427268B/en not_active Expired - Fee Related
- 2005-02-26 DE DE112005000504T patent/DE112005000504B4/de not_active Expired - Fee Related
- 2005-02-26 WO PCT/US2005/006178 patent/WO2005086223A2/en not_active Ceased
- 2005-02-26 KR KR1020067017587A patent/KR101187061B1/ko not_active Expired - Fee Related
- 2005-02-26 JP JP2007501862A patent/JP2007528126A/ja active Pending
- 2005-02-26 CN CN200580006568.3A patent/CN1926677A/zh active Pending
- 2005-03-01 TW TW094106008A patent/TWI375251B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200534362A (en) | 2005-10-16 |
| GB0617132D0 (en) | 2006-10-11 |
| DE112005000504B4 (de) | 2012-02-16 |
| KR20060129421A (ko) | 2006-12-15 |
| US20050193362A1 (en) | 2005-09-01 |
| JP2007528126A (ja) | 2007-10-04 |
| DE112005000504T5 (de) | 2007-01-11 |
| GB2427268B (en) | 2008-01-02 |
| WO2005086223A3 (en) | 2006-09-08 |
| US7065737B2 (en) | 2006-06-20 |
| GB2427268A (en) | 2006-12-20 |
| CN1926677A (zh) | 2007-03-07 |
| WO2005086223A2 (en) | 2005-09-15 |
| KR101187061B1 (ko) | 2012-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |