KR101187061B1 - Ｉｃ 제조 동안 다중층 오버레이 측정 및 교정 기법 - Google Patents

Ｉｃ 제조 동안 다중층 오버레이 측정 및 교정 기법 Download PDF

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Publication number
KR101187061B1
KR101187061B1 KR1020067017587A KR20067017587A KR101187061B1 KR 101187061 B1 KR101187061 B1 KR 101187061B1 KR 1020067017587 A KR1020067017587 A KR 1020067017587A KR 20067017587 A KR20067017587 A KR 20067017587A KR 101187061 B1 KR101187061 B1 KR 101187061B1
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South Korea
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overlay
wafer
layers
target
calibration
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Expired - Fee Related
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Korean (ko)
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KR20060129421A (ko
Inventor
코이 에이. 판
바라쓰 랑가라잔
반와르 싱흐
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글로벌파운드리즈 인크.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Data Mining & Analysis (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067017587A 2004-03-01 2005-02-26 Ｉｃ 제조 동안 다중층 오버레이 측정 및 교정 기법 Expired - Fee Related KR101187061B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/790,296 US7065737B2 (en) 2004-03-01 2004-03-01 Multi-layer overlay measurement and correction technique for IC manufacturing
US10/790,296 2004-03-01
PCT/US2005/006178 WO2005086223A2 (en) 2004-03-01 2005-02-26 Multi-layer overlay measurement and correction technique for ic manufacturing

Publications (2)

Publication Number Publication Date
KR20060129421A KR20060129421A (ko) 2006-12-15
KR101187061B1 true KR101187061B1 (ko) 2012-09-28

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KR1020067017587A Expired - Fee Related KR101187061B1 (ko) 2004-03-01 2005-02-26 Ｉｃ 제조 동안 다중층 오버레이 측정 및 교정 기법

Country Status (8)

Country Link
US (1) US7065737B2 (https=)
JP (1) JP2007528126A (https=)
KR (1) KR101187061B1 (https=)
CN (1) CN1926677A (https=)
DE (1) DE112005000504B4 (https=)
GB (1) GB2427268B (https=)
TW (1) TWI375251B (https=)
WO (1) WO2005086223A2 (https=)

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Publication number Publication date
TW200534362A (en) 2005-10-16
GB0617132D0 (en) 2006-10-11
DE112005000504B4 (de) 2012-02-16
KR20060129421A (ko) 2006-12-15
US20050193362A1 (en) 2005-09-01
JP2007528126A (ja) 2007-10-04
DE112005000504T5 (de) 2007-01-11
GB2427268B (en) 2008-01-02
WO2005086223A3 (en) 2006-09-08
US7065737B2 (en) 2006-06-20
GB2427268A (en) 2006-12-20
TWI375251B (en) 2012-10-21
CN1926677A (zh) 2007-03-07
WO2005086223A2 (en) 2005-09-15

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