GB2427268B - Multi-layer overlay measurement and correction technique for ic manufacturing - Google Patents

Multi-layer overlay measurement and correction technique for ic manufacturing

Info

Publication number
GB2427268B
GB2427268B GB0617132A GB0617132A GB2427268B GB 2427268 B GB2427268 B GB 2427268B GB 0617132 A GB0617132 A GB 0617132A GB 0617132 A GB0617132 A GB 0617132A GB 2427268 B GB2427268 B GB 2427268B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
overlay measurement
correction technique
layer overlay
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0617132A
Other languages
English (en)
Other versions
GB0617132D0 (en
GB2427268A (en
Inventor
Khoi A Phan
Bharath Rangarajan
Bhanwar Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0617132D0 publication Critical patent/GB0617132D0/en
Publication of GB2427268A publication Critical patent/GB2427268A/en
Application granted granted Critical
Publication of GB2427268B publication Critical patent/GB2427268B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Data Mining & Analysis (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB0617132A 2004-03-01 2005-02-26 Multi-layer overlay measurement and correction technique for ic manufacturing Expired - Fee Related GB2427268B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,296 US7065737B2 (en) 2004-03-01 2004-03-01 Multi-layer overlay measurement and correction technique for IC manufacturing
PCT/US2005/006178 WO2005086223A2 (en) 2004-03-01 2005-02-26 Multi-layer overlay measurement and correction technique for ic manufacturing

Publications (3)

Publication Number Publication Date
GB0617132D0 GB0617132D0 (en) 2006-10-11
GB2427268A GB2427268A (en) 2006-12-20
GB2427268B true GB2427268B (en) 2008-01-02

Family

ID=34887442

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0617132A Expired - Fee Related GB2427268B (en) 2004-03-01 2005-02-26 Multi-layer overlay measurement and correction technique for ic manufacturing

Country Status (8)

Country Link
US (1) US7065737B2 (https=)
JP (1) JP2007528126A (https=)
KR (1) KR101187061B1 (https=)
CN (1) CN1926677A (https=)
DE (1) DE112005000504B4 (https=)
GB (1) GB2427268B (https=)
TW (1) TWI375251B (https=)
WO (1) WO2005086223A2 (https=)

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US7333173B2 (en) * 2004-04-06 2008-02-19 Taiwan Semiconductor Manufacturing Company Method to simplify twin stage scanner OVL machine matching
US7337425B2 (en) * 2004-06-04 2008-02-26 Ami Semiconductor, Inc. Structured ASIC device with configurable die size and selectable embedded functions
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US7474401B2 (en) * 2005-09-13 2009-01-06 International Business Machines Corporation Multi-layer alignment and overlay target and measurement method
JP2007324371A (ja) * 2006-06-01 2007-12-13 Ebara Corp オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク
US20080018897A1 (en) * 2006-07-20 2008-01-24 Nanometrics Incorporated Methods and apparatuses for assessing overlay error on workpieces
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KR100834832B1 (ko) * 2006-11-29 2008-06-03 삼성전자주식회사 오버레이 계측설비를 이용한 패턴의 임계치수 측정방법
US7924408B2 (en) * 2007-02-23 2011-04-12 Kla-Tencor Technologies Corporation Temperature effects on overlay accuracy
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US10132763B2 (en) 2012-07-23 2018-11-20 Asml Netherlands B.V. Inspection method and apparatus, lithographic system and device manufacturing method
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
JP5965819B2 (ja) * 2012-10-26 2016-08-10 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び重ね合わせずれ量測定方法
US9506965B2 (en) * 2012-11-12 2016-11-29 United Microelectronics Corp. Alternately arranged overlay marks having asymmetric spacing and measurement thereof
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KR101564312B1 (ko) * 2015-07-07 2015-10-29 (주)오로스 테크놀로지 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법
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CN106547171B (zh) * 2015-09-17 2019-01-18 上海微电子装备（集团）股份有限公司 一种用于光刻装置的套刻补偿系统及方法
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CN105337878A (zh) * 2015-12-10 2016-02-17 成都捷科菲友信息技术有限公司 一种按压吸附式无影照明路由器
CN105323181A (zh) * 2015-12-10 2016-02-10 成都捷科菲友信息技术有限公司 一种可安放于墙角处的无影照明吸附路由器
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US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
US10663286B2 (en) * 2017-08-22 2020-05-26 Kla-Tencor Corporation Measuring thin films on grating and bandgap on grating
CN112514039B (zh) * 2018-07-30 2024-03-29 科磊股份有限公司 减少装置覆盖误差
CN109753718B (zh) * 2018-12-28 2023-09-05 山西潞安太阳能科技有限责任公司 一种基于最小二乘法的pecvd色差改善方法
US11353799B1 (en) 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
TWI814909B (zh) * 2019-09-27 2023-09-11 聯華電子股份有限公司 多層對位標記及其對位方法
CN111761060B (zh) * 2020-06-08 2022-03-29 湖南华曙高科技股份有限公司 应用于3d打印的风量控制方法、系统及可读存储介质
US11726410B2 (en) * 2021-04-20 2023-08-15 Kla Corporation Multi-resolution overlay metrology targets
US20230068016A1 (en) * 2021-08-26 2023-03-02 Kla Corporation Systems and methods for rotational calibration of metrology tools
KR102871169B1 (ko) * 2021-12-17 2025-10-14 케이엘에이 코포레이션 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계
CN117957497A (zh) * 2022-01-13 2024-04-30 科磊股份有限公司 使用小目标的叠加误差的校准测量
CN114428445A (zh) * 2022-01-27 2022-05-03 华虹半导体(无锡)有限公司 套刻误差量测方法和装置
CN117012760A (zh) * 2022-04-29 2023-11-07 联芯集成电路制造(厦门)有限公司 叠对标记
CN117192902B (zh) * 2022-05-31 2026-04-24 长鑫存储技术有限公司 套刻误差模型的构建方法和套刻校正方法
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
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CN119620564B (zh) * 2025-02-13 2025-07-11 杭州电子科技大学 一种基于Halcon的晶圆套刻误差测量方法

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Also Published As

Publication number Publication date
TW200534362A (en) 2005-10-16
GB0617132D0 (en) 2006-10-11
DE112005000504B4 (de) 2012-02-16
KR20060129421A (ko) 2006-12-15
US20050193362A1 (en) 2005-09-01
JP2007528126A (ja) 2007-10-04
DE112005000504T5 (de) 2007-01-11
WO2005086223A3 (en) 2006-09-08
US7065737B2 (en) 2006-06-20
GB2427268A (en) 2006-12-20
TWI375251B (en) 2012-10-21
CN1926677A (zh) 2007-03-07
WO2005086223A2 (en) 2005-09-15
KR101187061B1 (ko) 2012-09-28

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120226