CN1926677A - 用于集成电路制造之多层覆盖测量及修正技术 - Google Patents
用于集成电路制造之多层覆盖测量及修正技术 Download PDFInfo
- Publication number
- CN1926677A CN1926677A CN200580006568.3A CN200580006568A CN1926677A CN 1926677 A CN1926677 A CN 1926677A CN 200580006568 A CN200580006568 A CN 200580006568A CN 1926677 A CN1926677 A CN 1926677A
- Authority
- CN
- China
- Prior art keywords
- overlay
- layers
- wafer
- coverage
- errors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
- H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Data Mining & Analysis (AREA)
- Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/790,296 US7065737B2 (en) | 2004-03-01 | 2004-03-01 | Multi-layer overlay measurement and correction technique for IC manufacturing |
| US10/790,296 | 2004-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1926677A true CN1926677A (zh) | 2007-03-07 |
Family
ID=34887442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200580006568.3A Pending CN1926677A (zh) | 2004-03-01 | 2005-02-26 | 用于集成电路制造之多层覆盖测量及修正技术 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7065737B2 (https=) |
| JP (1) | JP2007528126A (https=) |
| KR (1) | KR101187061B1 (https=) |
| CN (1) | CN1926677A (https=) |
| DE (1) | DE112005000504B4 (https=) |
| GB (1) | GB2427268B (https=) |
| TW (1) | TWI375251B (https=) |
| WO (1) | WO2005086223A2 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614953A (zh) * | 2008-06-10 | 2009-12-30 | 以色列商·应用材料以色列公司 | 用于评估具有重复图形的目标物体的方法和系统 |
| CN107146783A (zh) * | 2016-03-01 | 2017-09-08 | 格罗方德半导体公司 | 将虚设图型用于套迭目标设计及套迭控制的方法 |
| CN114428445A (zh) * | 2022-01-27 | 2022-05-03 | 华虹半导体(无锡)有限公司 | 套刻误差量测方法和装置 |
| CN117192902A (zh) * | 2022-05-31 | 2023-12-08 | 长鑫存储技术有限公司 | 套刻误差模型的构建方法和套刻校正方法 |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7333173B2 (en) * | 2004-04-06 | 2008-02-19 | Taiwan Semiconductor Manufacturing Company | Method to simplify twin stage scanner OVL machine matching |
| US7337425B2 (en) * | 2004-06-04 | 2008-02-26 | Ami Semiconductor, Inc. | Structured ASIC device with configurable die size and selectable embedded functions |
| US7733906B2 (en) * | 2005-06-30 | 2010-06-08 | Intel Corporation | Methodology for network port security |
| KR100689709B1 (ko) * | 2005-08-10 | 2007-03-08 | 삼성전자주식회사 | 반도체 디바이스 제조를 위한 오버레이 마크 및 이를이용한 오버레이 측정방법 |
| US7474401B2 (en) * | 2005-09-13 | 2009-01-06 | International Business Machines Corporation | Multi-layer alignment and overlay target and measurement method |
| JP2007324371A (ja) * | 2006-06-01 | 2007-12-13 | Ebara Corp | オーバーレイ検査用オーバーレイマーク及びレンズ収差調査用マーク |
| US20080018897A1 (en) * | 2006-07-20 | 2008-01-24 | Nanometrics Incorporated | Methods and apparatuses for assessing overlay error on workpieces |
| TWI302341B (en) * | 2006-08-04 | 2008-10-21 | Nanya Technology Corp | Improved overlay mark |
| KR100834832B1 (ko) * | 2006-11-29 | 2008-06-03 | 삼성전자주식회사 | 오버레이 계측설비를 이용한 패턴의 임계치수 측정방법 |
| US7924408B2 (en) * | 2007-02-23 | 2011-04-12 | Kla-Tencor Technologies Corporation | Temperature effects on overlay accuracy |
| US7599063B2 (en) * | 2007-03-29 | 2009-10-06 | Macronix International Co., Ltd. | Method for checking alignment accuracy using overlay mark |
| NL1036180A1 (nl) * | 2007-11-20 | 2009-05-25 | Asml Netherlands Bv | Stage system, lithographic apparatus including such stage system, and correction method. |
| JP5259380B2 (ja) * | 2008-12-24 | 2013-08-07 | 株式会社東芝 | 半導体装置の製造方法 |
| US8449752B2 (en) * | 2009-09-30 | 2013-05-28 | HGST Netherlands B.V. | Trailing plated step |
| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US8336011B2 (en) * | 2011-02-07 | 2012-12-18 | GlobalFoundries, Inc. | Methods for fabricating an electrically correct integrated circuit |
| NL2008168A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Method of calculating model parameters of a substrate, a lithographic apparatus and an apparatus for controlling lithographic processing by a lithographic apparatus. |
| JP5731864B2 (ja) * | 2011-03-18 | 2015-06-10 | 株式会社Screenホールディングス | 描画データの補正装置および描画装置 |
| US9349660B2 (en) * | 2011-12-01 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit manufacturing tool condition monitoring system and method |
| US8908181B2 (en) | 2012-06-28 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Overlay mark and method of measuring the same |
| US10132763B2 (en) | 2012-07-23 | 2018-11-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic system and device manufacturing method |
| US9329033B2 (en) * | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| JP5965819B2 (ja) * | 2012-10-26 | 2016-08-10 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び重ね合わせずれ量測定方法 |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| US9760020B2 (en) * | 2012-11-21 | 2017-09-12 | Kla-Tencor Corporation | In-situ metrology |
| US9081287B2 (en) * | 2012-12-20 | 2015-07-14 | Kla-Tencor Corporation | Methods of measuring overlay errors in area-imaging e-beam lithography |
| US9052595B2 (en) * | 2013-03-15 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography process |
| US9029810B2 (en) | 2013-05-29 | 2015-05-12 | Kla-Tencor Corporation | Using wafer geometry to improve scanner correction effectiveness for overlay control |
| WO2014193983A1 (en) * | 2013-05-29 | 2014-12-04 | Kla-Tencor Corporation | Multi-layered target design |
| US9214317B2 (en) | 2013-06-04 | 2015-12-15 | Kla-Tencor Corporation | System and method of SEM overlay metrology |
| KR102574171B1 (ko) | 2014-08-29 | 2023-09-06 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법, 타겟 및 기판 |
| WO2016037003A1 (en) | 2014-09-03 | 2016-03-10 | Kla-Tencor Corporation | Optimizing the utilization of metrology tools |
| KR102287757B1 (ko) * | 2015-05-26 | 2021-08-09 | 삼성전자주식회사 | 오버레이 교정 데이터를 수정하는 방법 |
| KR101564312B1 (ko) * | 2015-07-07 | 2015-10-29 | (주)오로스 테크놀로지 | 오버레이 마크 및 이를 이용한 오버레이 계측방법 및 반도체 디바이스 제조방법 |
| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| CN106547171B (zh) * | 2015-09-17 | 2019-01-18 | 上海微电子装备(集团)股份有限公司 | 一种用于光刻装置的套刻补偿系统及方法 |
| US9470987B1 (en) | 2015-10-22 | 2016-10-18 | United Microelectronics Corp. | Overlay mask |
| CN105337878A (zh) * | 2015-12-10 | 2016-02-17 | 成都捷科菲友信息技术有限公司 | 一种按压吸附式无影照明路由器 |
| CN105323181A (zh) * | 2015-12-10 | 2016-02-10 | 成都捷科菲友信息技术有限公司 | 一种可安放于墙角处的无影照明吸附路由器 |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US10663286B2 (en) * | 2017-08-22 | 2020-05-26 | Kla-Tencor Corporation | Measuring thin films on grating and bandgap on grating |
| CN112514039B (zh) * | 2018-07-30 | 2024-03-29 | 科磊股份有限公司 | 减少装置覆盖误差 |
| CN109753718B (zh) * | 2018-12-28 | 2023-09-05 | 山西潞安太阳能科技有限责任公司 | 一种基于最小二乘法的pecvd色差改善方法 |
| US11353799B1 (en) | 2019-07-23 | 2022-06-07 | Kla Corporation | System and method for error reduction for metrology measurements |
| TWI814909B (zh) * | 2019-09-27 | 2023-09-11 | 聯華電子股份有限公司 | 多層對位標記及其對位方法 |
| CN111761060B (zh) * | 2020-06-08 | 2022-03-29 | 湖南华曙高科技股份有限公司 | 应用于3d打印的风量控制方法、系统及可读存储介质 |
| US11726410B2 (en) * | 2021-04-20 | 2023-08-15 | Kla Corporation | Multi-resolution overlay metrology targets |
| US20230068016A1 (en) * | 2021-08-26 | 2023-03-02 | Kla Corporation | Systems and methods for rotational calibration of metrology tools |
| KR102871169B1 (ko) * | 2021-12-17 | 2025-10-14 | 케이엘에이 코포레이션 | 개선된 타겟 배치 정확성을 위한 오버레이 타겟 설계 |
| CN117957497A (zh) * | 2022-01-13 | 2024-04-30 | 科磊股份有限公司 | 使用小目标的叠加误差的校准测量 |
| CN117012760A (zh) * | 2022-04-29 | 2023-11-07 | 联芯集成电路制造(厦门)有限公司 | 叠对标记 |
| KR20240108945A (ko) | 2023-01-03 | 2024-07-10 | 삼성전자주식회사 | 기판 검사 장치 및 기판 검사 방법 |
| WO2026015698A1 (en) * | 2024-07-10 | 2026-01-15 | Board Of Regents, The University Of Texas System | Methods for die-to-wafer and wafer-to-wafer bonding |
| CN119620564B (zh) * | 2025-02-13 | 2025-07-11 | 杭州电子科技大学 | 一种基于Halcon的晶圆套刻误差测量方法 |
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| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| US5545593A (en) * | 1993-09-30 | 1996-08-13 | Texas Instruments Incorporated | Method of aligning layers in an integrated circuit device |
| KR100468234B1 (ko) * | 1996-05-08 | 2005-06-22 | 가부시키가이샤 니콘 | 노광방법,노광장치및디스크 |
| JP3527063B2 (ja) * | 1997-06-04 | 2004-05-17 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US6028910A (en) * | 1998-01-19 | 2000-02-22 | Foster-Miller, Inc. | High resolution areal tomosynthesis |
| US6612159B1 (en) * | 1999-08-26 | 2003-09-02 | Schlumberger Technologies, Inc. | Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers |
| US6350548B1 (en) * | 2000-03-15 | 2002-02-26 | International Business Machines Corporation | Nested overlay measurement target |
| US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| US6218200B1 (en) * | 2000-07-14 | 2001-04-17 | Motorola, Inc. | Multi-layer registration control for photolithography processes |
| US7068833B1 (en) * | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| JP5180419B2 (ja) * | 2000-08-30 | 2013-04-10 | ケーエルエー−テンカー・コーポレーション | 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法 |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US6766211B1 (en) * | 2000-10-03 | 2004-07-20 | International Business Machines Corporation | Structure and method for amplifying target overlay errors using the synthesized beat signal between interleaved arrays of differing periodicity |
| US6699627B2 (en) * | 2000-12-08 | 2004-03-02 | Adlai Smith | Reference wafer and process for manufacturing same |
| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| US6486956B2 (en) * | 2001-03-23 | 2002-11-26 | Micron Technology, Inc. | Reducing asymmetrically deposited film induced registration error |
| US20020192577A1 (en) * | 2001-06-15 | 2002-12-19 | Bernard Fay | Automated overlay metrology system |
| US6768538B2 (en) * | 2001-11-02 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Photolithography system to increase overlay accuracy |
| KR100464854B1 (ko) * | 2002-06-26 | 2005-01-06 | 삼성전자주식회사 | 반도체 기판의 정렬 방법 및 정렬 장치 |
| US6888260B2 (en) * | 2003-04-17 | 2005-05-03 | Infineon Technologies Aktiengesellschaft | Alignment or overlay marks for semiconductor processing |
| US6937337B2 (en) * | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
-
2004
- 2004-03-01 US US10/790,296 patent/US7065737B2/en not_active Expired - Fee Related
-
2005
- 2005-02-26 GB GB0617132A patent/GB2427268B/en not_active Expired - Fee Related
- 2005-02-26 DE DE112005000504T patent/DE112005000504B4/de not_active Expired - Fee Related
- 2005-02-26 WO PCT/US2005/006178 patent/WO2005086223A2/en not_active Ceased
- 2005-02-26 KR KR1020067017587A patent/KR101187061B1/ko not_active Expired - Fee Related
- 2005-02-26 JP JP2007501862A patent/JP2007528126A/ja active Pending
- 2005-02-26 CN CN200580006568.3A patent/CN1926677A/zh active Pending
- 2005-03-01 TW TW094106008A patent/TWI375251B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614953A (zh) * | 2008-06-10 | 2009-12-30 | 以色列商·应用材料以色列公司 | 用于评估具有重复图形的目标物体的方法和系统 |
| CN107146783A (zh) * | 2016-03-01 | 2017-09-08 | 格罗方德半导体公司 | 将虚设图型用于套迭目标设计及套迭控制的方法 |
| CN114428445A (zh) * | 2022-01-27 | 2022-05-03 | 华虹半导体(无锡)有限公司 | 套刻误差量测方法和装置 |
| CN117192902A (zh) * | 2022-05-31 | 2023-12-08 | 长鑫存储技术有限公司 | 套刻误差模型的构建方法和套刻校正方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200534362A (en) | 2005-10-16 |
| GB0617132D0 (en) | 2006-10-11 |
| DE112005000504B4 (de) | 2012-02-16 |
| KR20060129421A (ko) | 2006-12-15 |
| US20050193362A1 (en) | 2005-09-01 |
| JP2007528126A (ja) | 2007-10-04 |
| DE112005000504T5 (de) | 2007-01-11 |
| GB2427268B (en) | 2008-01-02 |
| WO2005086223A3 (en) | 2006-09-08 |
| US7065737B2 (en) | 2006-06-20 |
| GB2427268A (en) | 2006-12-20 |
| TWI375251B (en) | 2012-10-21 |
| WO2005086223A2 (en) | 2005-09-15 |
| KR101187061B1 (ko) | 2012-09-28 |
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