TWI372462B - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- TWI372462B TWI372462B TW093131680A TW93131680A TWI372462B TW I372462 B TWI372462 B TW I372462B TW 093131680 A TW093131680 A TW 093131680A TW 93131680 A TW93131680 A TW 93131680A TW I372462 B TWI372462 B TW I372462B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- manufacturing semiconductor
- manufacturing
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/976—Temporary protective layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
- Dicing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003368029 | 2003-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200524168A TW200524168A (en) | 2005-07-16 |
TWI372462B true TWI372462B (en) | 2012-09-11 |
Family
ID=34420144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093131680A TWI372462B (en) | 2003-10-28 | 2004-10-19 | Method for manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (3) | US7241666B2 (zh) |
EP (2) | EP2259300B1 (zh) |
JP (2) | JP2011197696A (zh) |
KR (2) | KR101106661B1 (zh) |
CN (1) | CN100411089C (zh) |
TW (1) | TWI372462B (zh) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7229900B2 (en) * | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
TWI406688B (zh) * | 2004-02-26 | 2013-09-01 | Semiconductor Energy Lab | 運動器具,娛樂工具,和訓練工具 |
KR101187403B1 (ko) * | 2004-06-02 | 2012-10-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
WO2005122280A1 (en) * | 2004-06-14 | 2005-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and communication system |
CN101599456B (zh) * | 2004-06-24 | 2011-03-09 | 株式会社半导体能源研究所 | 制造薄膜集成电路的方法 |
US7591863B2 (en) * | 2004-07-16 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip |
US8288773B2 (en) | 2004-08-23 | 2012-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and manufacturing method thereof |
JP2006082260A (ja) * | 2004-09-14 | 2006-03-30 | Oki Data Corp | 半導体複合装置、半導体複合装置の製造方法、半導体複合装置を使用したledヘッド及びこのledヘッドを用いた画像形成装置 |
JP4801337B2 (ja) * | 2004-09-21 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7307006B2 (en) * | 2005-02-28 | 2007-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP2006294155A (ja) * | 2005-04-13 | 2006-10-26 | Tdk Corp | 磁気メモリデバイス |
US8030132B2 (en) | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
US7256742B2 (en) * | 2005-08-09 | 2007-08-14 | Inpaq Technology Co., Ltd. | Flexible antenna apparatus and a manufacturing method thereof |
US8900970B2 (en) * | 2006-04-28 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a flexible substrate |
TW200805682A (en) * | 2006-07-07 | 2008-01-16 | Advanced Semiconductor Eng | Method for encapsulating sensor chips |
TWI379409B (en) * | 2006-09-29 | 2012-12-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
US7713836B2 (en) * | 2006-09-29 | 2010-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device |
US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
KR101428824B1 (ko) | 2006-10-04 | 2014-08-11 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공방법 |
JP5322346B2 (ja) * | 2007-06-07 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7763502B2 (en) | 2007-06-22 | 2010-07-27 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device |
US8102694B2 (en) * | 2007-06-25 | 2012-01-24 | Sandisk 3D Llc | Nonvolatile memory device containing carbon or nitrogen doped diode |
US8072791B2 (en) * | 2007-06-25 | 2011-12-06 | Sandisk 3D Llc | Method of making nonvolatile memory device containing carbon or nitrogen doped diode |
US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
JP4506810B2 (ja) * | 2007-10-19 | 2010-07-21 | ソニー株式会社 | 表示装置 |
JP5464843B2 (ja) * | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
JP2009141093A (ja) | 2007-12-06 | 2009-06-25 | Toshiba Corp | 発光素子及び発光素子の製造方法 |
WO2009104371A1 (ja) * | 2008-02-20 | 2009-08-27 | シャープ株式会社 | フレキシブル半導体基板の製造方法 |
KR20110050580A (ko) * | 2008-08-04 | 2011-05-16 | 파나소닉 주식회사 | 플렉시블 반도체 장치 및 그 제조 방법 |
US8148732B2 (en) * | 2008-08-29 | 2012-04-03 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Carbon-containing semiconductor substrate |
US8871609B2 (en) * | 2009-06-30 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin wafer handling structure and method |
US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
US8507322B2 (en) | 2010-06-24 | 2013-08-13 | Akihiro Chida | Semiconductor substrate and method for manufacturing semiconductor device |
JP5852810B2 (ja) * | 2010-08-26 | 2016-02-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR20120137868A (ko) | 2011-06-13 | 2012-12-24 | 삼성디스플레이 주식회사 | 평판 표시 패널용 보호 필름 제거 장치 및 보호 필름 제거 방법 |
JP2013251255A (ja) * | 2012-05-04 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
US20140097003A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
KR101992899B1 (ko) * | 2012-12-17 | 2019-06-25 | 엘지디스플레이 주식회사 | 터치 패널 내장형 유기 발광 다이오드 표시 장치 및 이의 제조 방법 |
KR102056368B1 (ko) * | 2013-03-26 | 2019-12-17 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치의 제조 방법 |
KR20140127112A (ko) * | 2013-04-24 | 2014-11-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 모니터링 장치 및 액정 표시 장치의 제조 방법 |
KR102187752B1 (ko) | 2013-05-07 | 2020-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 및 박리 장치 |
WO2015019971A1 (en) | 2013-08-06 | 2015-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method |
WO2015029806A1 (en) * | 2013-08-30 | 2015-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Processing apparatus and processing method of stack |
TWI663722B (zh) | 2013-09-06 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 發光裝置以及發光裝置的製造方法 |
US9937698B2 (en) | 2013-11-06 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and light-emitting device |
JP2015108735A (ja) * | 2013-12-05 | 2015-06-11 | 旭硝子株式会社 | 電子デバイスの製造方法 |
CN103923574B (zh) * | 2014-03-27 | 2016-05-18 | 厦门爱谱生电子科技有限公司 | 双面胶、及其制造方法、fpc产品黏贴双面胶的方法 |
JP2015195106A (ja) | 2014-03-31 | 2015-11-05 | 株式会社ジャパンディスプレイ | 有機el表示装置及びその製造方法 |
JP2015228367A (ja) | 2014-05-02 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、入出力装置、及び電子機器 |
US9799829B2 (en) | 2014-07-25 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, light-emitting device, module, and electronic device |
KR102328677B1 (ko) * | 2014-10-17 | 2021-11-19 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 그 제조방법 |
EP3113227B1 (en) * | 2015-06-30 | 2023-08-16 | LG Display Co., Ltd. | Organic light emitting display device |
US10014271B2 (en) * | 2015-11-20 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of manufacturing the same |
JP6423781B2 (ja) * | 2015-11-20 | 2018-11-14 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6822858B2 (ja) | 2016-01-26 | 2021-01-27 | 株式会社半導体エネルギー研究所 | 剥離の起点の形成方法及び剥離方法 |
KR102469311B1 (ko) * | 2016-03-31 | 2022-11-18 | 동우 화인켐 주식회사 | 유연성 디스플레이 장치의 제조 방법 |
JP6756508B2 (ja) | 2016-04-04 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
TWI730017B (zh) * | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
CN108629234A (zh) * | 2017-03-21 | 2018-10-09 | 上海敏传智能科技有限公司 | 一种陶瓷基应变指纹传感器装置 |
CN112714943A (zh) * | 2018-09-28 | 2021-04-27 | 夏普株式会社 | 电子装置的制造方法 |
CN111883001B (zh) * | 2020-06-23 | 2022-06-14 | 深圳市洲明科技股份有限公司 | 一种led显示屏面罩贴合方法及治具 |
CA3194224A1 (en) * | 2020-10-06 | 2022-04-14 | Francis Zaato | Techniques for fabricating and separating flexible microelectronics devices from rigid substrates |
US20230032232A1 (en) * | 2021-07-31 | 2023-02-02 | Raytheon Company | Application and method of integrated bar patterns in detector structures |
US20230069164A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor image sensor and method for forming the same |
KR20240029651A (ko) * | 2022-08-26 | 2024-03-06 | 삼성디스플레이 주식회사 | 표시장치의 제조방법 및 표시장치 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02257618A (ja) * | 1989-03-29 | 1990-10-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US7075501B1 (en) * | 1990-12-31 | 2006-07-11 | Kopin Corporation | Head mounted display system |
US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
KR100333153B1 (ko) * | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
JP3150840B2 (ja) * | 1994-03-11 | 2001-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3364081B2 (ja) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
JPH09148731A (ja) * | 1995-11-17 | 1997-06-06 | Fujitsu Ltd | 配線基板間の接続構造の製造方法 |
US6089442A (en) * | 1996-04-10 | 2000-07-18 | Canon Kabushiki Kaisha | Electrode connection method |
JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
JP4619461B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
KR100481994B1 (ko) * | 1996-08-27 | 2005-12-01 | 세이코 엡슨 가부시키가이샤 | 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치 |
JP3809681B2 (ja) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
JPH11160734A (ja) * | 1997-11-28 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
JP3361278B2 (ja) * | 1997-12-26 | 2003-01-07 | シャープ株式会社 | 反射型液晶表示装置とその製造方法、ならびに回路基板の製造方法 |
US6423614B1 (en) * | 1998-06-30 | 2002-07-23 | Intel Corporation | Method of delaminating a thin film using non-thermal techniques |
US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
JP3447619B2 (ja) * | 1999-06-25 | 2003-09-16 | 株式会社東芝 | アクティブマトリクス基板の製造方法、中間転写基板 |
JP2002050749A (ja) | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
SG148819A1 (en) * | 2000-09-14 | 2009-01-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2002287662A (ja) * | 2001-03-27 | 2002-10-04 | Sharp Corp | アクティブマトリックス基板およびその製造方法 |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4567282B2 (ja) * | 2001-07-16 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
TW564471B (en) * | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003142666A (ja) * | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、icカード、及び電子機器 |
JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
JP4472238B2 (ja) * | 2001-08-10 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 剥離方法および半導体装置の作製方法 |
TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
US7351300B2 (en) * | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
KR100944886B1 (ko) * | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
JP2003229548A (ja) * | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 乗物、表示装置、および半導体装置の作製方法 |
US6953735B2 (en) * | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
US7098069B2 (en) * | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
JP2003229588A (ja) * | 2002-02-01 | 2003-08-15 | Canon Inc | 薄膜半導体の製造方法及び太陽電池の製造方法 |
JP2003249631A (ja) * | 2002-02-25 | 2003-09-05 | Sony Corp | 半導体基板の製造方法および半導体基板ならびに半導体装置 |
JP3875130B2 (ja) * | 2002-03-26 | 2007-01-31 | 株式会社東芝 | 表示装置及びその製造方法 |
TWI303882B (en) * | 2002-03-26 | 2008-12-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP3980918B2 (ja) * | 2002-03-28 | 2007-09-26 | 株式会社東芝 | アクティブマトリクス基板及びその製造方法、表示装置 |
JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
WO2004064018A1 (ja) * | 2003-01-15 | 2004-07-29 | Semiconductor Energy Laboratory Co., Ltd. | 剥離方法及びその剥離方法を用いた表示装置の作製方法 |
KR100574338B1 (ko) * | 2004-01-19 | 2006-04-26 | 삼성전자주식회사 | 반도체 장치의 금속 게이트 형성 방법 |
-
2004
- 2004-10-19 EP EP10176959.4A patent/EP2259300B1/en not_active Expired - Fee Related
- 2004-10-19 TW TW093131680A patent/TWI372462B/zh active
- 2004-10-19 EP EP04024864.3A patent/EP1528594B1/en not_active Expired - Fee Related
- 2004-10-19 US US10/967,279 patent/US7241666B2/en not_active Expired - Fee Related
- 2004-10-26 KR KR1020040085618A patent/KR101106661B1/ko active IP Right Grant
- 2004-10-28 CN CNB2004101038962A patent/CN100411089C/zh not_active Expired - Fee Related
-
2007
- 2007-07-09 US US11/822,609 patent/US7622361B2/en not_active Expired - Fee Related
-
2009
- 2009-10-14 US US12/578,722 patent/US7883989B2/en active Active
-
2011
- 2011-05-16 KR KR1020110045749A patent/KR101142924B1/ko not_active IP Right Cessation
- 2011-06-17 JP JP2011134989A patent/JP2011197696A/ja not_active Withdrawn
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2013
- 2013-06-13 JP JP2013124324A patent/JP5690876B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US7622361B2 (en) | 2009-11-24 |
US20050112805A1 (en) | 2005-05-26 |
JP2011197696A (ja) | 2011-10-06 |
EP2259300A2 (en) | 2010-12-08 |
TW200524168A (en) | 2005-07-16 |
EP1528594A2 (en) | 2005-05-04 |
CN1638030A (zh) | 2005-07-13 |
JP5690876B2 (ja) | 2015-03-25 |
US7241666B2 (en) | 2007-07-10 |
US7883989B2 (en) | 2011-02-08 |
US20100035407A1 (en) | 2010-02-11 |
JP2013239714A (ja) | 2013-11-28 |
CN100411089C (zh) | 2008-08-13 |
KR20050040735A (ko) | 2005-05-03 |
KR20110056471A (ko) | 2011-05-30 |
EP2259300B1 (en) | 2020-04-08 |
EP1528594B1 (en) | 2019-05-29 |
EP1528594A3 (en) | 2006-06-28 |
US20080009106A1 (en) | 2008-01-10 |
KR101142924B1 (ko) | 2012-05-10 |
KR101106661B1 (ko) | 2012-01-18 |
EP2259300A3 (en) | 2017-08-16 |
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