JP5852810B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5852810B2 JP5852810B2 JP2011180658A JP2011180658A JP5852810B2 JP 5852810 B2 JP5852810 B2 JP 5852810B2 JP 2011180658 A JP2011180658 A JP 2011180658A JP 2011180658 A JP2011180658 A JP 2011180658A JP 5852810 B2 JP5852810 B2 JP 5852810B2
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000001681 protective effect Effects 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 25
- 239000013013 elastic material Substances 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 97
- 239000010410 layer Substances 0.000 description 64
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 239000004020 conductor Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 239000005060 rubber Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- -1 polybutylene terephthalate Polymers 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920002492 poly(sulfone) Polymers 0.000 description 4
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- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000002788 crimping Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920006235 chlorinated polyethylene elastomer Polymers 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920002681 hypalon Polymers 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 239000003562 lightweight material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000008116 organic polysulfides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
保護材料を素子部上に設置する際や接着処理の際に保護材料に位置ズレが生じても、半導体装置を高い歩留まりで作製できる方法を、図1乃至図2を用いて説明する。
本実施の形態では、実施の形態1にて作製した半導体装置を用い、一軸方向の位置調整のみで外部接続端子と外部配線の位置調整を行うことができる半導体装置への外部配線接続方法を、図3を用いて説明する。
102 素子部
104 端子部
106 段差層
110 保護材料
112 基材
114 接着材料
116 貼り合わせ部材
118 開口部
300 外部配線
302 導電材料
304 圧着用治具
Claims (2)
- 基板上に、長さX(Xは5mm以下)の端子部と素子部とを形成し、
前記素子部上に、前記素子部を覆うように段差層を形成し、
前記段差層上に、前記素子部を覆うように可撓性を有する保護部材を設置し、
前記保護部材と、張り合わせ部材とを押し当てることで、前記保護部材を前記段差層に接着させ、
前記段差層の厚さは、0.38X以上2mm以下であり、
前記張り合わせ部材は、表面硬度は50以上100以下の弾性材料であることを特徴とする半導体装置の作製方法。 - 基板上に、長さX(Xは5mm以下)の端子部と素子部とを形成し、
前記素子部上に、前記素子部を覆うように段差層を形成し、
前記段差層上に、前記素子部を覆うように可撓性を有する保護部材を設置し、
前記保護部材と、張り合わせ部材とを押し当てることで、前記保護部材を前記段差層に溶着させ、
前記段差層の厚さは、0.38X以上2mm以下であり、
前記張り合わせ部材は、表面硬度は50以上100以下の弾性材料であることを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011180658A JP5852810B2 (ja) | 2010-08-26 | 2011-08-22 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010189324 | 2010-08-26 | ||
JP2010189324 | 2010-08-26 | ||
JP2011180658A JP5852810B2 (ja) | 2010-08-26 | 2011-08-22 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012069928A JP2012069928A (ja) | 2012-04-05 |
JP2012069928A5 JP2012069928A5 (ja) | 2014-09-11 |
JP5852810B2 true JP5852810B2 (ja) | 2016-02-03 |
Family
ID=45696023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011180658A Expired - Fee Related JP5852810B2 (ja) | 2010-08-26 | 2011-08-22 | 半導体装置の作製方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8617995B2 (ja) |
JP (1) | JP5852810B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9229481B2 (en) | 2013-12-20 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP7046351B2 (ja) | 2018-01-31 | 2022-04-04 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7160302B2 (ja) * | 2018-01-31 | 2022-10-25 | 三国電子有限会社 | 接続構造体および接続構造体の作製方法 |
JP7185252B2 (ja) | 2018-01-31 | 2022-12-07 | 三国電子有限会社 | 接続構造体の作製方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0969638A (ja) | 1995-08-31 | 1997-03-11 | Shin Etsu Polymer Co Ltd | 太陽電池用保護フィルム |
JPH0970886A (ja) | 1995-09-05 | 1997-03-18 | Fuji Electric Co Ltd | 太陽電池モジュールの製造装置 |
JP2000284308A (ja) * | 1999-03-30 | 2000-10-13 | Ricoh Co Ltd | 液晶表示装置の接続方法 |
TW512543B (en) | 1999-06-28 | 2002-12-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
US7316841B1 (en) * | 1999-08-30 | 2008-01-08 | Sakura Color Products Corporation | Eraser |
TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
TW495808B (en) | 2000-02-04 | 2002-07-21 | Semiconductor Energy Lab | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
CN101397649B (zh) * | 2001-02-01 | 2011-12-28 | 株式会社半导体能源研究所 | 能够将有机化合物沉积在衬底上的装置 |
JP4801278B2 (ja) | 2001-04-23 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
JP2003119207A (ja) * | 2001-10-11 | 2003-04-23 | Jsr Corp | 光硬化性組成物、その硬化物、及び積層体 |
US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP4216008B2 (ja) | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末 |
JP2004095760A (ja) * | 2002-08-30 | 2004-03-25 | Optrex Corp | プリント配線板 |
JP4373086B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
JP2004281976A (ja) | 2003-03-19 | 2004-10-07 | Dainippon Printing Co Ltd | 透明カバーフィルム |
TWI372462B (en) * | 2003-10-28 | 2012-09-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
JP4974452B2 (ja) * | 2003-10-28 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4809600B2 (ja) * | 2003-10-28 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7229900B2 (en) * | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
JP2005303158A (ja) * | 2004-04-15 | 2005-10-27 | Nec Corp | デバイスの形成方法 |
JP5157440B2 (ja) * | 2005-03-18 | 2013-03-06 | コニカミノルタホールディングス株式会社 | 有機el素子の製造方法 |
JP4404109B2 (ja) * | 2007-07-03 | 2010-01-27 | ソニー株式会社 | 表示装置の製造方法 |
JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2011
- 2011-08-22 JP JP2011180658A patent/JP5852810B2/ja not_active Expired - Fee Related
- 2011-08-25 US US13/217,543 patent/US8617995B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012069928A (ja) | 2012-04-05 |
US8617995B2 (en) | 2013-12-31 |
US20120049340A1 (en) | 2012-03-01 |
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