TWI370451B - Read operation for non-volatile storage that includes compensation for coupling - Google Patents

Read operation for non-volatile storage that includes compensation for coupling

Info

Publication number
TWI370451B
TWI370451B TW097127484A TW97127484A TWI370451B TW I370451 B TWI370451 B TW I370451B TW 097127484 A TW097127484 A TW 097127484A TW 97127484 A TW97127484 A TW 97127484A TW I370451 B TWI370451 B TW I370451B
Authority
TW
Taiwan
Prior art keywords
coupling
read operation
volatile storage
includes compensation
compensation
Prior art date
Application number
TW097127484A
Other languages
English (en)
Other versions
TW200901202A (en
Inventor
Yan Li
Jian Chen
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200901202A publication Critical patent/TW200901202A/zh
Application granted granted Critical
Publication of TWI370451B publication Critical patent/TWI370451B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW097127484A 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling TWI370451B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/099,049 US7187585B2 (en) 2005-04-05 2005-04-05 Read operation for non-volatile storage that includes compensation for coupling

Publications (2)

Publication Number Publication Date
TW200901202A TW200901202A (en) 2009-01-01
TWI370451B true TWI370451B (en) 2012-08-11

Family

ID=36637026

Family Applications (4)

Application Number Title Priority Date Filing Date
TW097127484A TWI370451B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling
TW097127483A TWI370454B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling
TW095112038A TWI323465B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling
TW097127485A TWI380308B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW097127483A TWI370454B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling
TW095112038A TWI323465B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling
TW097127485A TWI380308B (en) 2005-04-05 2006-04-04 Read operation for non-volatile storage that includes compensation for coupling

Country Status (7)

Country Link
US (6) US7187585B2 (zh)
EP (1) EP1866931A1 (zh)
JP (1) JP4778553B2 (zh)
KR (1) KR100934496B1 (zh)
CN (1) CN101218650B (zh)
TW (4) TWI370451B (zh)
WO (1) WO2006107731A1 (zh)

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US7301839B2 (en) 2007-11-27
US20070103987A1 (en) 2007-05-10
KR100934496B1 (ko) 2009-12-30
US20070103975A1 (en) 2007-05-10
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TWI380308B (en) 2012-12-21
US7301816B2 (en) 2007-11-27
EP1866931A1 (en) 2007-12-19
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US20070109850A1 (en) 2007-05-17
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US7301808B2 (en) 2007-11-27
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