TWI359202B - - Google Patents

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Publication number
TWI359202B
TWI359202B TW99101819A TW99101819A TWI359202B TW I359202 B TWI359202 B TW I359202B TW 99101819 A TW99101819 A TW 99101819A TW 99101819 A TW99101819 A TW 99101819A TW I359202 B TWI359202 B TW I359202B
Authority
TW
Taiwan
Prior art keywords
target
flow path
fluid flow
plate
fixed
Prior art date
Application number
TW99101819A
Other languages
English (en)
Chinese (zh)
Other versions
TW201033388A (en
Inventor
Jun Ueno
Original Assignee
Jun Ueno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jun Ueno filed Critical Jun Ueno
Publication of TW201033388A publication Critical patent/TW201033388A/zh
Application granted granted Critical
Publication of TWI359202B publication Critical patent/TWI359202B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW99101819A 2009-01-22 2010-01-22 Target structure and method for manufacturing target structure TW201033388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009011919A JP4382867B1 (ja) 2009-01-22 2009-01-22 ターゲット構造及びターゲット構造の製造方法

Publications (2)

Publication Number Publication Date
TW201033388A TW201033388A (en) 2010-09-16
TWI359202B true TWI359202B (enExample) 2012-03-01

Family

ID=41549762

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99101819A TW201033388A (en) 2009-01-22 2010-01-22 Target structure and method for manufacturing target structure

Country Status (5)

Country Link
JP (1) JP4382867B1 (enExample)
KR (1) KR101059940B1 (enExample)
CN (1) CN101960043A (enExample)
TW (1) TW201033388A (enExample)
WO (1) WO2010084857A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103080369B (zh) * 2010-07-23 2015-01-21 吉坤日矿日石金属株式会社 在靶的背面具有沟的磁性材料溅射靶
JP5721815B2 (ja) * 2011-04-12 2015-05-20 株式会社アルバック ターゲット及びターゲットの製造方法
KR101079621B1 (ko) * 2011-06-30 2011-11-03 박경일 타겟과 백킹 플레이트의 비접착식 체결구조
CN102501045B (zh) * 2011-10-20 2014-10-08 宁波江丰电子材料股份有限公司 镍靶材组件的加工方法及加工装置
CN104588807B (zh) * 2013-10-31 2016-07-20 宁波江丰电子材料股份有限公司 背板的形成方法和背板
WO2017016575A1 (en) * 2015-07-24 2017-02-02 Applied Materials, Inc. Cooling and utilization optimization of heat sensitive bonded metal targets
KR20180068335A (ko) * 2015-11-12 2018-06-21 허니웰 인터내셔널 인코포레이티드 냉각 구조물을 갖는 스퍼터 타겟 배킹 플레이트 어셈블리
CN108018534B (zh) * 2017-12-12 2020-12-11 中国电子科技集团公司第四十八研究所 一种用于装夹靶材的磁控溅射镀膜装夹装置
TWI687534B (zh) * 2018-09-07 2020-03-11 住華科技股份有限公司 背板、使用其之濺射靶材及其使用方法
JP7362327B2 (ja) * 2019-07-18 2023-10-17 東京エレクトロン株式会社 ターゲット構造体及び成膜装置
CN110828021B (zh) * 2019-11-04 2024-09-06 中国原子能科学研究院 一种用于医用同位素生产靶的水冷机构
CN111455335B (zh) * 2020-04-24 2022-10-21 河北恒博新材料科技股份有限公司 一种平面靶材的绑定方法
CN112323026A (zh) * 2020-10-29 2021-02-05 珠海和泽科技有限公司 靶材背板及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59009549D1 (de) * 1989-06-05 1995-09-28 Balzers Hochvakuum Verfahren zum Kühlen von Targets sowie Kühleinrichtung für Targets.
JPH0625839A (ja) * 1992-01-10 1994-02-01 Sony Corp スパッタ装置及びカソード
JP3747447B2 (ja) * 1996-11-08 2006-02-22 ソニー株式会社 スパッタ装置
JP2000026962A (ja) * 1998-07-09 2000-01-25 Matsushita Electric Ind Co Ltd スパッタリング装置

Also Published As

Publication number Publication date
WO2010084857A1 (ja) 2010-07-29
TW201033388A (en) 2010-09-16
CN101960043A (zh) 2011-01-26
JP2010168621A (ja) 2010-08-05
JP4382867B1 (ja) 2009-12-16
KR20100114923A (ko) 2010-10-26
KR101059940B1 (ko) 2011-08-29

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Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees