TWI353390B - - Google Patents
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- Publication number
- TWI353390B TWI353390B TW096116790A TW96116790A TWI353390B TW I353390 B TWI353390 B TW I353390B TW 096116790 A TW096116790 A TW 096116790A TW 96116790 A TW96116790 A TW 96116790A TW I353390 B TWI353390 B TW I353390B
- Authority
- TW
- Taiwan
- Prior art keywords
- support plate
- copper
- target
- thickness
- pure copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 102
- 239000010949 copper Substances 0.000 claims description 102
- 229910052802 copper Inorganic materials 0.000 claims description 98
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 54
- 238000005477 sputtering target Methods 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 25
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 20
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 239000011701 zinc Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 2
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims 1
- MIUMTDPSDBCACC-UHFFFAOYSA-N copper zinc Chemical compound [Cu][Zn][Cu] MIUMTDPSDBCACC-UHFFFAOYSA-N 0.000 description 45
- 230000015572 biosynthetic process Effects 0.000 description 32
- 239000000463 material Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000009830 intercalation Methods 0.000 description 4
- 230000002687 intercalation Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- XXZCIYUJYUESMD-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(morpholin-4-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCOCC1 XXZCIYUJYUESMD-UHFFFAOYSA-N 0.000 description 1
- KNDAEDDIIQYRHY-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(piperazin-1-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCNCC1 KNDAEDDIIQYRHY-UHFFFAOYSA-N 0.000 description 1
- WWSJZGAPAVMETJ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethoxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OCC WWSJZGAPAVMETJ-UHFFFAOYSA-N 0.000 description 1
- FYELSNVLZVIGTI-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-5-ethylpyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1CC)CC(=O)N1CC2=C(CC1)NN=N2 FYELSNVLZVIGTI-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- MGGVALXERJRIRO-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-2-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-1H-pyrazol-5-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)O MGGVALXERJRIRO-UHFFFAOYSA-N 0.000 description 1
- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006179930 | 2006-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200801216A TW200801216A (en) | 2008-01-01 |
| TWI353390B true TWI353390B (enExample) | 2011-12-01 |
Family
ID=38845319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096116790A TW200801216A (en) | 2006-06-29 | 2007-05-11 | Sputtering target/backing plate conjunction element |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8157973B2 (enExample) |
| EP (1) | EP2039797B1 (enExample) |
| JP (1) | JP4879986B2 (enExample) |
| KR (1) | KR101040076B1 (enExample) |
| CN (1) | CN101479400B (enExample) |
| TW (1) | TW200801216A (enExample) |
| WO (1) | WO2008001547A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE602005021535D1 (de) * | 2004-11-17 | 2010-07-08 | Nippon Mining Co | Trägerplattenanordnung für sputtertargets und filmabscheidungssystem |
| US8398833B2 (en) * | 2008-04-21 | 2013-03-19 | Honeywell International Inc. | Use of DC magnetron sputtering systems |
| JP5175976B2 (ja) | 2009-11-20 | 2013-04-03 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット−バッキングプレート接合体及びその製造方法 |
| KR101445945B1 (ko) | 2009-12-24 | 2014-09-29 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 가돌리늄제 스퍼터링 타깃 및 동 타깃의 제조 방법 |
| SG189977A1 (en) | 2010-10-27 | 2013-06-28 | Jx Nippon Mining & Metals Corp | Sputtering target backing plate assembly and method for producing same |
| US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
| JP2014523969A (ja) | 2011-06-27 | 2014-09-18 | ソレラス・リミテッド | スパッタリングターゲット |
| KR102112912B1 (ko) * | 2013-11-06 | 2020-05-19 | 제이엑스금속주식회사 | 스퍼터링 타깃/배킹 플레이트 조립체 |
| WO2016017432A1 (ja) | 2014-07-31 | 2016-02-04 | Jx日鉱日石金属株式会社 | 防食性の金属とＭｏ又はＭｏ合金を拡散接合したバッキングプレート、及び該バッキングプレートを備えたスパッタリングターゲット－バッキングプレート組立体 |
| JP6021861B2 (ja) * | 2014-08-06 | 2016-11-09 | Ｊｘ金属株式会社 | スパッタリングターゲット−バッキングプレート接合体 |
| KR101649794B1 (ko) | 2014-08-20 | 2016-08-19 | 김정욱 | 타워램프 상태 모니터링용 무선 타워램프 정보 관리 시스템 |
| JP6546953B2 (ja) | 2017-03-31 | 2019-07-17 | Ｊｘ金属株式会社 | スパッタリングターゲット−バッキングプレート接合体及びその製造方法 |
| US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
| KR102263414B1 (ko) | 2020-02-19 | 2021-06-10 | 주식회사 엘에이티 | 스퍼터 전극체 |
| CN113173284B (zh) * | 2021-04-26 | 2022-07-15 | 宁波江丰电子材料股份有限公司 | 一种半成品靶材背板的管理方法 |
| KR102707659B1 (ko) | 2021-11-17 | 2024-09-19 | 바짐테크놀로지 주식회사 | 스퍼터링 타겟 접합체 |
| KR102815335B1 (ko) | 2022-11-17 | 2025-06-02 | 바짐테크놀로지 주식회사 | 스퍼터링 타겟 접합방법 |
| KR102727465B1 (ko) | 2024-06-18 | 2024-11-07 | 주식회사 샤슘코리아 | 백 플레이트 결합력 및 타겟 수명을 개선한 스퍼터링 타겟 어셈블리 |
| KR102727468B1 (ko) | 2024-06-18 | 2024-11-07 | 주식회사 샤슘코리아 | 마찰용접 기반의 스퍼터링 타겟 어셈블리 제조 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345368A (ja) * | 1986-08-13 | 1988-02-26 | Toshiba Corp | スパツタ装置 |
| JPH01222047A (ja) | 1988-03-01 | 1989-09-05 | Nippon Mining Co Ltd | 銅又は銅合金製バッキングプレート |
| JPH0774436B2 (ja) | 1990-09-20 | 1995-08-09 | 富士通株式会社 | 薄膜形成方法 |
| US5693203A (en) | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
| JP3660014B2 (ja) | 1995-03-31 | 2005-06-15 | 株式会社テクノファイン | スパッタ用ターゲット |
| JPH11189870A (ja) * | 1997-12-25 | 1999-07-13 | Nisshin Steel Co Ltd | スパッタリング用ターゲットおよびその冷却方法 |
| JP2001329362A (ja) | 2000-05-17 | 2001-11-27 | Nikko Materials Co Ltd | バッキングプレート及びスパッタリングターゲット−バッキングプレート組立体 |
| JP3791829B2 (ja) | 2000-08-25 | 2006-06-28 | 株式会社日鉱マテリアルズ | パーティクル発生の少ないスパッタリングターゲット |
| JP3905295B2 (ja) | 2000-10-02 | 2007-04-18 | 日鉱金属株式会社 | 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法 |
| JP3905301B2 (ja) | 2000-10-31 | 2007-04-18 | 日鉱金属株式会社 | タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法 |
| US6858116B2 (en) | 2000-11-17 | 2005-02-22 | Nikko Materials Company, Limited | Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles |
| US7115193B2 (en) | 2001-03-14 | 2006-10-03 | Nippon Mining & Metals Co., Ltd. | Sputtering target producing very few particles, backing plate or apparatus within sputtering device and roughening method by electric discharge machining |
| KR100600973B1 (ko) | 2001-12-19 | 2006-07-13 | 닛코킨조쿠 가부시키가이샤 | 자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체 |
| US6709557B1 (en) * | 2002-02-28 | 2004-03-23 | Novellus Systems, Inc. | Sputter apparatus for producing multi-component metal alloy films and method for making the same |
| TWI269815B (en) * | 2002-05-20 | 2007-01-01 | Tosoh Smd Inc | Replaceable target sidewall insert with texturing |
| US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
| KR20060033013A (ko) * | 2003-07-14 | 2006-04-18 | 토소우 에스엠디, 인크 | 저 전도 백킹 플레이트를 갖는 스퍼터링 타겟 조립체 및 그제조 방법 |
| EP2626444A3 (en) * | 2003-12-25 | 2013-10-16 | JX Nippon Mining & Metals Corporation | Copper or copper alloy target/copper alloy backing plate assembly |
| DE602005021535D1 (de) * | 2004-11-17 | 2010-07-08 | Nippon Mining Co | Trägerplattenanordnung für sputtertargets und filmabscheidungssystem |
| CN101171362B (zh) | 2005-04-28 | 2010-06-09 | 日矿金属株式会社 | 溅射靶 |
| WO2007040014A1 (ja) | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | スパッタリングターゲット |
| US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
| US20080236738A1 (en) * | 2007-03-30 | 2008-10-02 | Chi-Fung Lo | Bonded sputtering target and methods of manufacture |
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2007
- 2007-05-02 CN CN2007800243834A patent/CN101479400B/zh active Active
- 2007-05-02 JP JP2008522336A patent/JP4879986B2/ja active Active
- 2007-05-02 EP EP07742794A patent/EP2039797B1/en active Active
- 2007-05-02 WO PCT/JP2007/059359 patent/WO2008001547A1/ja not_active Ceased
- 2007-05-02 US US12/306,734 patent/US8157973B2/en active Active
- 2007-05-02 KR KR1020087031070A patent/KR101040076B1/ko active Active
- 2007-05-11 TW TW096116790A patent/TW200801216A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101479400B (zh) | 2011-06-22 |
| US20090277788A1 (en) | 2009-11-12 |
| EP2039797B1 (en) | 2012-08-29 |
| KR20090016599A (ko) | 2009-02-16 |
| TW200801216A (en) | 2008-01-01 |
| KR101040076B1 (ko) | 2011-06-09 |
| CN101479400A (zh) | 2009-07-08 |
| US8157973B2 (en) | 2012-04-17 |
| JP4879986B2 (ja) | 2012-02-22 |
| JPWO2008001547A1 (ja) | 2009-11-26 |
| EP2039797A1 (en) | 2009-03-25 |
| WO2008001547A1 (en) | 2008-01-03 |
| EP2039797A4 (en) | 2010-04-28 |
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