KR100600973B1 - 자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체 - Google Patents
자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체 Download PDFInfo
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- KR100600973B1 KR100600973B1 KR1020047008835A KR20047008835A KR100600973B1 KR 100600973 B1 KR100600973 B1 KR 100600973B1 KR 1020047008835 A KR1020047008835 A KR 1020047008835A KR 20047008835 A KR20047008835 A KR 20047008835A KR 100600973 B1 KR100600973 B1 KR 100600973B1
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- South Korea
- Prior art keywords
- target
- backing plate
- magnetic
- plate
- aluminum
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (12)
- 평탄성을 유지하면서 자성체 타겟트(2)를 미리 알루미늄 판에 접합하고, 다음에 이 알루미늄 판을 접합한 자성체 타겟트(2)를 평탄성을 유지한 채 배킹 플레이트에 접합하며, 자성체 타겟트(2)의 배킹 플레이트에의 접합 후, 상기 알루미늄 판을 연삭 제거하는 것을 특징으로 하는 판 두께의 격차가 적은 자성체 타겟트와 배킹 플레이트(5)와의 접합방법
- 제1항에 있어서, 자성체가 철, 코발트, 니켈, 백금 또는 이들의 합금인 것을 특징으로 하는 자성체 타겟트(2)와 배킹 플레이트(5)와의 접합방법
- 제1항 또는 제2항에 있어서, 배킹 플레이트가 동 혹은 동합금 또는 알루미늄 혹은 알루미늄 합금인 것을 특징으로 하는 자성체 타겟트(2)와 배킹 플레이트(5)와의 접합방법
- 제1항 또는 제2항 중 어느 한 항에 있어서, 자성체 타겟트와 배킹 플레이트를 본딩 또는 확산 접합에 의해 접합하는 것을 특징으로 하는 자성체 타겟트와 배킹 플레이트와의 접합방법
- 제4항에 있어서, 알루미늄 혹은 알루미늄 합금판 등의 삽입재를 통하여 확산 접합 하는 것을 특징으로 하는 자성체 타겟트와 배킹 플레이트와의 접합방법
- 제1항 또는 제2항 중 어느 한 항에 있어서, 알루미늄 판을 연삭 제거 후, 자성체 표면을 다시 연삭하는 것을 특징으로 하는 자성체 타겟트와 배킹 플레이트와의 접합방법
- 평균 두께에 대한 두께의 변위가 4% 이하인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
- 타겟트의 최대 누설 자속을 100%로 한 경우의, 이 최대 누설 자속에 대한 평균 누설 자속이 80% 이상인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
- 제7항에 있어서, 타겟트의 최대 누설 자속을 100%로 한 경우의, 이 최대 누설 자속에 대한 평균 누설 자속이 80% 이상인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
- 타겟트의 최대 누설 자속을 100%로 한 경우의, 이 최대 누설 자속에 대한 최소 누설 자속이 70% 이상인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
- 제7항 내지 제10항 중 어느 한 항에 있어서, 타겟트의 최대 누설 자속을 100%로 한 경우의, 이 최대 누설 자속에 대한 최소 누설 자속이 70% 이상인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
- 제7항 내지 제10항 중 어느 한 항에 있어서, 자성체가 철, 코발트, 니켈, 백금 또는 이들의 합금인 것을 특징으로 하는 잔류 뒤틀림을 갖는 자성체 타겟트와 배킹 플레이트와의 조립체
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00385666 | 2001-12-19 | ||
JP2001385666 | 2001-12-19 | ||
PCT/JP2002/011863 WO2003052161A1 (fr) | 2001-12-19 | 2002-11-14 | Procede pour assembler une cible en substance magnetique avec une plaque dorsale, et cible en substance magnetique |
Publications (2)
Publication Number | Publication Date |
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KR20040066155A KR20040066155A (ko) | 2004-07-23 |
KR100600973B1 true KR100600973B1 (ko) | 2006-07-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020047008835A KR100600973B1 (ko) | 2001-12-19 | 2002-11-14 | 자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7347353B2 (ko) |
EP (1) | EP1466999B1 (ko) |
JP (1) | JP4204978B2 (ko) |
KR (1) | KR100600973B1 (ko) |
CN (1) | CN100396812C (ko) |
TW (1) | TW555876B (ko) |
WO (1) | WO2003052161A1 (ko) |
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KR100505536B1 (ko) * | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스 |
US6988306B2 (en) * | 2003-12-01 | 2006-01-24 | Praxair Technology, Inc. | High purity ferromagnetic sputter target, assembly and method of manufacturing same |
EP2626444A3 (en) * | 2003-12-25 | 2013-10-16 | JX Nippon Mining & Metals Corporation | Copper or copper alloy target/copper alloy backing plate assembly |
EP2236644A3 (en) * | 2004-11-17 | 2012-01-04 | JX Nippon Mining & Metals Corporation | Sputtering target backing plate assembly and film deposition system |
-
2002
- 2002-11-14 CN CNB028257480A patent/CN100396812C/zh not_active Expired - Lifetime
- 2002-11-14 KR KR1020047008835A patent/KR100600973B1/ko active IP Right Grant
- 2002-11-14 WO PCT/JP2002/011863 patent/WO2003052161A1/ja active Application Filing
- 2002-11-14 US US10/498,146 patent/US7347353B2/en not_active Expired - Lifetime
- 2002-11-14 JP JP2003553027A patent/JP4204978B2/ja not_active Expired - Lifetime
- 2002-11-14 EP EP02781766.7A patent/EP1466999B1/en not_active Expired - Lifetime
- 2002-11-19 TW TW091133695A patent/TW555876B/zh not_active IP Right Cessation
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2008
- 2008-01-31 US US12/023,588 patent/US9653270B2/en active Active
Also Published As
Publication number | Publication date |
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JPWO2003052161A1 (ja) | 2005-04-28 |
KR20040066155A (ko) | 2004-07-23 |
US9653270B2 (en) | 2017-05-16 |
CN100396812C (zh) | 2008-06-25 |
EP1466999B1 (en) | 2014-10-08 |
JP4204978B2 (ja) | 2009-01-07 |
WO2003052161A1 (fr) | 2003-06-26 |
CN1606633A (zh) | 2005-04-13 |
TW200408721A (en) | 2004-06-01 |
US7347353B2 (en) | 2008-03-25 |
TW555876B (en) | 2003-10-01 |
EP1466999A1 (en) | 2004-10-13 |
US20040265616A1 (en) | 2004-12-30 |
EP1466999A4 (en) | 2007-05-16 |
US20090008245A1 (en) | 2009-01-08 |
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