TWI425106B - 具有控制焊料厚度的濺射靶組合體 - Google Patents

具有控制焊料厚度的濺射靶組合體 Download PDF

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TWI425106B
TWI425106B TW096124479A TW96124479A TWI425106B TW I425106 B TWI425106 B TW I425106B TW 096124479 A TW096124479 A TW 096124479A TW 96124479 A TW96124479 A TW 96124479A TW I425106 B TWI425106 B TW I425106B
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sputtering target
target assembly
backing plate
forming
solder
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TW200831691A (en
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Paul S Gilman
Binu Mathew
Brian J O'hara
Thomas J Hunt
Peter H Mcdonald
Holger J Koenigsmann
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Praxair Technology Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0006—Exothermic brazing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other

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Description

具有控制焊料厚度的濺射靶組合體
本發明有關濺射靶之領域。特別地是，本發明有關以一接合箔材將背撐板附接至濺射靶，以便於形成一利用在薄膜之物理蒸氣沈積的濺射靶組合體之方法。
陰極濺射係一寬廣地利用之方法，用於將薄層材料沈積在基板上。大致上，此製程需要標靶之一氣體離子轟擊，該標靶具有一由想要材料所形成之面，該材料將在該基板上沈積為一薄膜或層。該標靶之離子轟擊不只造成該標靶材料之原子或分子濺射，同時對該標靶賦予相當可觀之熱能。此熱量係藉著使用一典型在背撐板下方或繞著背撐板循環之冷卻流體所消散，該背撐板係與該標靶呈熱交換關係地定位。
該標靶形成一陰極組合體的一部份，其隨同一陽極置於一抽空室中，該抽空室包含一惰性氣體，較佳地是氬。一高電壓電場係施加越過該陰極及陽極。該惰性氣體係藉著與由該陰極射出之電子碰撞而離子化。帶正電荷之氣體離子被吸引至該陰極，且當與該標靶表面撞擊時，撞出該標靶材料。所撞出之標靶材料橫越該抽空之封閉體及在該想要之基板上沈積為一薄膜，該基板通常係位於緊接至該陽極。
於傳統標靶陰極組合體中，該標靶係附接至一非磁性背撐板。該背撐板將該濺射靶固持於一濺射室中，且亦對該濺射靶提供結構性支撐。該背撐板通常被水冷卻，以帶走藉由該標靶的離子轟擊所產生之熱量。磁鐵典型係以熟知之配置安排在該背撐板下方，以便呈延伸環繞著該標靶之暴露面的迴圈或隧道之形式形成上述磁場。
為了於該標靶及該背撐板之間達成良好的熱及電接觸，這些構件一般係藉由軟焊、硬焊、擴散接合、夾合、環氧粘接、或以連鎖環狀構件之使用彼此附接。該選擇之技術係視接合材料之特徵及該標靶組合體之想要性質與特徵而定。
該焊接技術典型被利用於接合一鐵磁性濺射靶，當作範例，純鎳(Ni)及以Ni為基礎之合金，諸如NiFe及NiFeCo；純鐵(Fe)及以Fe為基礎之合金，諸如FeTa、FeCo及FeNi；純鈷(Co)及以Co為基礎之合金，諸如CoCr與CoCrPt。該標靶典型藉著一焊料被接合至該背撐板，該焊料可具有大約攝氏140至220度之熔點，諸如銦－錫，錫－鉛，或錫－銀－銅。該標靶及背撐板之加熱至此溫度以熔化該焊料係有問題的，其中其可影響該標靶微結構。再者，由於該二零件間之熱膨脹性質中之大差異，可發生局部翹曲及差異的局部收縮。
Vascak等人(美國專利第5,230,462號)有關將一濺射靶接合至一背撐板之焊料，供隨後用於濺射操作中。該焊料係潤濕送至該背撐板及該標靶之面對面的側面上、將該背撐板及標靶浸沒於一焊料槽中、與隨後將該等已潤濕之零件壓按接觸。
Koenigsmann等人(美國專利第6,708,870 B2號)揭示以一包圍冷卻或背撐板之周邊的填料金屬，固態接合及固定一標靶插件至一背撐板之組合。
Ohhashi等人(美國專利第5,693,203號)揭示固態接合之使用，以避免典型用於擴散接合所需之高壓及溫度。此專利敘述在一背撐板及一濺射靶之間壓按一金屬箔材，以形成一固態接合。
本發明提供數個勝過該相關技藝之優點。特別地是，本發明提供一焊料接合技術，包含在該標靶及該背撐板之間施加接合箔材，並點燃該箔材以產生足夠之能量，以熔化施加至該標靶及背撐板之焊料。觀察該組合體之最小加熱，且該製程允許該焊料層厚度被小心地控制。
本發明之另一目的係提供一具有均勻之標靶材料厚度及對稱的漏磁通之標靶組合體。
對於一普通熟諳該技藝者，在回顧該說明書、圖面、及至此為止所附之申請專利時，本發明之其他目的及態樣將變得明顯。
根據本發明的一態樣，提供一形成濺射靶組合體之方法。該方法包含以下步驟：提供一具有頂部表面之背撐板，並以一焊料層預先潤濕該頂部表面；提供一具有底部表面之濺射靶，並以一焊料層預先潤濕該底部表面；於該背撐板及該濺射靶之間導入一接合箔材，其中該接合箔材係一用於放熱反應之傳播的可點燃之異質分層結構；將該背撐板及該濺射靶壓按在一起，並點燃在其間之接合箔材，以熔化及接合該背撐板上之焊料層與該濺射靶上之焊料層，而於該濺射靶組合體之形成中不會影響該濺射靶之微結構或平坦度。
按照本發明之另一態樣，提供一濺射靶、一背撐板及一接合箔材，該接合箔材設置於該背撐板及該濺射靶之間。該接合箔材係一用於放熱反應之傳播的可點燃之異質分層結構，以便將該濺射靶接合至該背撐板，而於該濺射靶組合體之形成中不會影響該濺射靶之微結構或平坦度。
本發明提供一平面式單件鐵磁性濺射靶及組合體。該等鐵磁性濺射靶及組合體係藉由一新穎之焊接方法所製成，其中接合箔材(亦已知為可起反應的箔材)被導入該濺射靶及該背撐板之間。按照本發明之原理，一鐵磁性材料係形成為一實心、單一濺射靶組構，諸如遍及該材料具有一均勻磁導率之板件。當作範例，藉由本發明所考慮之鐵磁性材料包含純鎳(Ni)及以Ni為基礎之合金，諸如NiFe及NiFeCo；純鐵(Fe)及以Fe為基礎之合金，諸如FeTa、FeCo及FeNi；純鈷(Co)及以Co為基礎之合金，諸如CoCr與CoCrPt；與其他包含鎳、鐵、鈷的二元、三元、及較高程度之元素合金、及其他具有大於1.0之固有磁導率的元素。
參考圖1，濺射靶10係一實質上圓形之扁圓狀、高純度鐵磁性濺射靶。該鐵磁性濺射靶具有一至少大約99.99重量百分比之純度。用於此說明書之目的，所有濃度係為重量百分比。有利地是，濺射靶具有至少99.995重量百分比之純度，且更有利地是至少大約99.999重量百分比。雖然濺射靶10如所描述係扁圓形，那些熟諳此技藝者將了解可利用其他標靶形狀，諸如橢圓形、正方形、或長方形。
標靶10可由一坯料工件所製成，該工件被鍛造及熱加工或冷加工或低溫地形成。熱加工減少該工件中之殘留應力，但典型比冷加工或低溫成形導致一較高之磁導率。該濺射表面12典型被維持為平面的，以連續地由該處撞出該材料，並將一均勻之層放置於該基板上。該標靶之底部表面(或非濺射表面)係以一焊料層14預先潤濕，以利於與背撐板16咬合。
利用於該背撐板之金屬可為任何數目之金屬，且包含鋁(Al)、鈦(Ti)、銅(Cu)、及其合金。較佳地是，該背撐板係由一銅合金所製成。背撐板16包含一被利用與濺射靶10咬合之頂部表面。像該標靶之底部表面，該背撐板之頂部表面係以一焊料層18預先潤濕。這些焊料能選自傳統銦－錫、錫－鉛、錫－銀－銅、或其他以錫為基礎的合金之中。
接合或可起反應的箔材20在將該零組件壓按在一起之前被導入濺射靶10及背撐板16之間。該接合箔材係一可點燃之異質分層結構。某些該等示範材料可被用於製造接合箔材20，並選自矽化物、鋁化物、硼化物、碳化物、鋁熱劑反應化合物、合金、金屬玻璃及合成物之中。這些接合箔材之型式係分別討論於Barbee,Jr等人及Weihs等人(美國專利第5,538,795及6,863,992號)中，且其全部以引用的方式併入本文中。
於合併濺射靶10及背撐板16中，壓床26之壓盤22及24被帶至遭受一實質上均勻之壓力數量，且在其間具有接合箔材20。該接合箔材係經由直流電源(未示出)點燃，以致造成一放熱反應。於此反應期間所產生之熱熔化焊料層14及18，但不會貫穿進入濺射靶10或背撐板16。較佳地是，該深度係大約0.005吋或更少，造成該施加之焊料層熔化及同時期地接合在一起，而不會造成濺射靶10或背撐板16的晶體或冶金結構中之撓曲或破壞。其結果是使該濺射靶維持其平坦度以及其冶金學之完整性。
於本發明之另一示範具體實施例中，並持續參考圖1，待接合之零組件被放置於一壓床26中，諸如液壓、螺桿、手動或電腦操作式，只要其能產生一至少大約50,000磅之負載。對齊夾緊裝置28包含精確間隔裝置30，該等間隔裝置被放置在對齊栓銷32上，以便集中及對齊背撐板16及濺射靶10。該等焊料層(14,18)係分別潤濕至該背撐板及該濺射靶上，達一由大約0.005分佈至0.010吋之厚度。一鋁間隔板34、諸如鋁合金6061係放置在新平橡膠(neoprene)薄片材料36上，以將該負載一致地分佈在該背撐板上方。施加至少大約50,000磅之負載，以將該等零組件帶至在一起，如在圖2所示。
直流電電連接裝置能被附接至該壓床。特別地是，來自直流電源(未示出)之負引線能被附接至該背撐板16，且該正引線係連接至該接合箔材20。如圖2所示，於穩定經由壓盤22及24所之施加壓力期間，點燃接合箔材20，造成一如上述討論之放熱反應。該接合箔材熔化焊料層14及18至一大約0.005吋之深度，如此藉由將一濺射靶附接至一背撐板形成一濺射靶組合體。在接合之後，該整合之標靶組合體係由該壓床移去，且顯示在圖3中。
該接合及機械加工之濺射靶組合體可用超音波檢查，以決定在該接合中是否有任何缺陷。可作超音波及機械量測，以確認該完成之標靶組合體組構的尺寸。
將參考以下之範例進一步詳細地敘述本發明之濺射靶組合體，然而，該等範例將不被解釋為限制本發明。
範例
九個具有99.995重量百分比之純度的鎳坯料係由一具有0.375吋厚度之熱軋鎳板射流切割，以獲得17.75吋之坯料直徑。九個具有21.0吋直徑及0.750吋厚度之海軍黃銅或銅鎘坯料被用作背撐板。所有坯料係在兩側面上機械加工，以獲得平行之表面。
然後該等鎳坯料之六個係使用共熔焊料接合至銅鎘背撐板，而沒有接合箔材，該焊料包含63重量百分比之數量的錫及37重量百分比之數量的鉛。該等鎳坯料之三個及該等海軍黃銅坯料之三個係使用相同之焊料預先潤濕。過量之焊料係藉由機械加工所移去，以在該鎳及該等海軍黃銅坯料兩者上獲得0.005吋至0.010吋之焊料厚度。
對於該後面之三個鎳標靶坯料及海軍黃銅坯料，具有0.003吋厚度之接合箔材使用上述之對齊夾緊裝置被放置在該鎳及海軍黃銅坯料之間。具有17.75吋直徑之0.750吋厚鋁6061間隔板被放置在一具有相同直徑之新平橡膠薄片上。來自直流電源之負引線係附接至該背撐板，且該正引線係連接至該接合箔材。施加一大約107,000磅之負載，以將該等零組件帶至在一起。於壓力之穩定時，點燃該接合箔材，造成一如上述討論之放熱反應，及熔化該等焊料層，如此將該等鎳坯料附接至該黃銅背撐板。
該接合之濺射靶組合體係接著以超音波檢查，且獲得大於百分之99的接合覆蓋範圍。在機械加工之後，施行超音波厚度量測，以於33處位置中決定鎳及焊料厚度；該等結果被摘要在下面表格中。
對於該表格中之每一濺射靶組合體，藉由越過該標靶採取33次厚度量測及計算該額定(亦即平均)厚度決定該焊料層厚度。如在圖4A－B與該表格中所說明，該焊料層厚度能變化高達該額定厚度的百分之100。用於該傳統標靶之平均焊料層厚度係0.019吋，並具有0.014吋之平均範圍。在另一方面，於本發明中，該平均厚度係0.014吋，並具有0.006吋之平均範圍。這指示該焊料層厚度的高達百分之57的控制中之改善。
利用一鐵磁性標靶的濺射靶組合體之漏磁通(MLF)、亦已知為通過磁通量(PTF)對於厚度變化係敏感的。這些變化可源自該焊料厚度或該濺射靶本身。其已發現藉由在此所敘述之製程所製成的標靶組合體導致一實質上對稱之MLF。因此，該等標靶組合體係能夠將一具有均勻性質之薄膜沈積至該基板上。
為預測該標靶組合體性能，進行非破壞性之MLF量測。使用一測試夾緊裝置架台作成該量測，該架台接近至該待測試濺射靶組合體之平面式表面具有一永久性固定之蹄形磁鐵。一霍耳探針被導入，以測量貫穿該標靶及由該標靶後方進入之磁場。如圖5A－B所示，該MLF標圖呈現各種彩色之一系列同心環，特別地是，如圖5A所示，一傳統濺射靶組合體具有一非對稱的MLF，該MLF具有100高斯之範圍(由36至136高斯)。圖5B描述一對稱的MLF標圖，其顯示一同心圖案及僅只62高斯(由42至104高斯)之範圍。一具有圖5B中所示MLF標圖類型之標靶組合體係能夠將一具有均勻性質之薄膜沈積至該基板上。接近該標靶之邊緣的變化之顏色程度指示與該磁場所產生之邊緣效應有關的較高之MLF。
雖然不發明已參考某些較佳具體實施例詳細地敘述，那些熟諳此技藝者將認知在此有在該等申請專利之精神及範圍內的本發明之其他具體實施例。
10．．．濺射靶
12．．．濺射表面
14．．．焊料層
16．．．背撐板
18．．．焊料層
20．．．接合箔材
22．．．壓盤
24．．．壓盤
26．．．壓床
28．．．夾緊裝置
30．．．間隔裝置
32．．．對齊栓銷
34．．．間隔板
36．．．薄片材料
對於其有關所附圖面的示範具體實施例之以下詳細敘述，本發明之目的及優點將變得明顯，其中類似數目標示類似部件，且其中：圖1係該壓床設定與在其中之標靶組合體零組件的一概要橫截面；圖2係該等壓盤被帶至在一起及加壓在其間之濺射靶組合體的一概要圖；圖3係藉由本發明的製程所製成之最後濺射靶組合體的概要圖；圖4A係如與該相關技藝作比較，用於按照本發明所製成之300毫米Ni標靶組合體的焊料層厚度及範圍之圖解描繪，反之圖4B係該焊料層厚度中之標準偏差的一圖解描繪；及圖5A描述一相關技藝標靶組合體中之非對稱的漏磁通；反之圖5B描述根據本發明之標靶組合體的對稱的漏磁通。
10．．．濺射靶
12．．．濺射表面
14．．．焊料層
16．．．背撐板
18．．．焊料層
20．．．接合箔材
22．．．壓盤
24．．．壓盤
26．．．壓床
28．．．夾緊裝置
30．．．間隔裝置
32．．．對齊栓銷
34．．．間隔板
36．．．薄片材料

Claims (20)

  1. 一種形成濺射靶組合體之方法，包含以下步驟：提供一具有頂部表面之背撐板，及以一焊料層預先潤濕該頂部表面；提供一具有底部表面之鐵磁性濺射靶，及以一焊料層預先潤濕該底部表面，該濺射靶遍及其材料不具有斜面，而具有實質均勻的磁導率；於該背撐板及該鐵磁性濺射靶之間導入一接合箔材，其中該接合箔材係一用於放熱反應之傳播的可點燃之異質分層結構；將該背撐板及該鐵磁性濺射靶壓按在一起，並點燃在其間之接合箔材，以熔化及接合該背撐板上之焊料層與該鐵磁性濺射靶上之焊料層，而於該濺射靶組合體之形成中不會影響該鐵磁性濺射靶之微結構或平坦度，且該濺射靶組合體具有實質上對稱的漏磁通。
  2. 如申請專利範圍第1項之形成濺射靶組合體的方法，另包含：在壓按之前於一壓床中對齊該標靶及背撐板，且此後施加最少50,000磅之負載。
  3. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該背撐板及該濺射靶係由不同材料所製成。
  4. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該等焊料層係共熔焊料，該焊料包含量達63重量百分比之錫，且該剩餘部分係鉛。
  5. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該等焊料層具有實質上相同之厚度。
  6. 如申請專利範圍第1項之形成濺射靶組合體的方法，另包含將來自直流電源之負引線連接至該背撐板，並將來自直流電源之正引線連接至該接合箔材，以點燃該箔材及開始該放熱反應。
  7. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該接合箔材之厚度範圍由0.002吋至0.003吋。
  8. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該等焊料層具有一由0.005吋分佈至0.010吋之厚度。
  9. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該壓力係經由一液壓機、螺桿或手動壓床施加。
  10. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該接合箔材係選自矽化物、鋁化物、硼化物、碳化物、鋁熱劑反應化合物、合金、金屬玻璃及複合物之中。
  11. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該焊料係選自銦-錫、錫-鉛、或錫-銀-銅之中。
  12. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中該濺射靶係一高純度鐵磁性鎳、鎳合金、鈷、或鈷合金靶。
  13. 如申請專利範圍第1項之形成濺射靶組合體的方法，其中越過該濺射靶之磁通量係對稱地分佈。
  14. 一種濺射靶組合體，包含：一鐵磁性濺射靶，遍及其材料不具有斜面，而具有實質均勻的磁導率；一背撐板；及一接合箔材，該接合箔材設置於該背撐板及該鐵磁性濺射靶之間，其中該接合箔材係一用於放熱反應之傳播的可點燃之異質分層結構，以便將該鐵磁性濺射靶接合至該背撐板，而於該濺射靶組合體之形成中不會影響該鐵磁性濺射靶之微結構或平坦度，且該濺射靶組合體具有實質上對稱的漏磁通。
  15. 如申請專利範圍第14項之濺射靶組合體，另包含設置在該背撐板及該接合箔材間之第一焊料接合層、與在該濺射靶及該接合箔材間之第二焊料接合層。
  16. 如申請專利範圍第14項之濺射靶組合體，其中該接合箔材之厚度範圍由0.002吋至0.003吋。
  17. 如申請專利範圍第15項之濺射靶組合體，另包含焊料層，該等焊料層具有一由0.005吋分佈至0.010吋之厚度。
  18. 如申請專利範圍第14項之濺射靶組合體，其中該接合箔材係選自矽化物、鋁化物、硼化物、碳化物、鋁熱劑反應化合物、合金、金屬玻璃及複合物之中。
  19. 如申請專利範圍第14項之濺射靶組合體，其中該濺射靶係一高純度鐵磁性鎳、鎳合金、鈷、或鈷合金 靶。
  20. 如申請專利範圍第14項之濺射靶組合體，其中越過該濺射靶之磁通量係對稱地分佈。
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CN110977133A (zh) * 2019-12-25 2020-04-10 宁波江丰电子材料股份有限公司 一种超高纯铜靶材的扩散焊接方法
CN111001920A (zh) * 2019-12-25 2020-04-14 宁波江丰电子材料股份有限公司 一种热等静压扩散焊接的方法
CN111001921A (zh) * 2019-12-25 2020-04-14 宁波江丰电子材料股份有限公司 一种超高纯铜靶材的扩散焊接方法
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EP2044611B1 (en) 2016-02-17
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IL196182A0 (en) 2009-09-22
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US8342383B2 (en) 2013-01-01
US8993122B2 (en) 2015-03-31
US20080006528A1 (en) 2008-01-10
US20130087453A1 (en) 2013-04-11
WO2008005461A2 (en) 2008-01-10
TW200831691A (en) 2008-08-01
CN101484968B (zh) 2011-09-14
KR20090045188A (ko) 2009-05-07
CN101484968A (zh) 2009-07-15
KR101528373B1 (ko) 2015-06-11
IL196182A (en) 2014-03-31

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