JP4879986B2 - スパッタリングターゲット／バッキングプレート接合体 - Google Patents

スパッタリングターゲット／バッキングプレート接合体 Download PDF

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Publication number
JP4879986B2
JP4879986B2 JP2008522336A JP2008522336A JP4879986B2 JP 4879986 B2 JP4879986 B2 JP 4879986B2 JP 2008522336 A JP2008522336 A JP 2008522336A JP 2008522336 A JP2008522336 A JP 2008522336A JP 4879986 B2 JP4879986 B2 JP 4879986B2
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Japan
Prior art keywords
backing plate
copper
target
zinc alloy
pure copper
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JP2008522336A
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English (en)
Japanese (ja)
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JPWO2008001547A1 (ja
Inventor
国博 小田
篤志 福嶋
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Priority to JP2008522336A priority Critical patent/JP4879986B2/ja
Publication of JPWO2008001547A1 publication Critical patent/JPWO2008001547A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
JP2008522336A 2006-06-29 2007-05-02 スパッタリングターゲット／バッキングプレート接合体 Active JP4879986B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008522336A JP4879986B2 (ja) 2006-06-29 2007-05-02 スパッタリングターゲット／バッキングプレート接合体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006179930 2006-06-29
JP2006179930 2006-06-29
PCT/JP2007/059359 WO2008001547A1 (en) 2006-06-29 2007-05-02 Sputtering target/backing plate conjunction element
JP2008522336A JP4879986B2 (ja) 2006-06-29 2007-05-02 スパッタリングターゲット／バッキングプレート接合体

Publications (2)

Publication Number Publication Date
JPWO2008001547A1 JPWO2008001547A1 (ja) 2009-11-26
JP4879986B2 true JP4879986B2 (ja) 2012-02-22

Family

ID=38845319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008522336A Active JP4879986B2 (ja) 2006-06-29 2007-05-02 スパッタリングターゲット／バッキングプレート接合体

Country Status (7)

Country Link
US (1) US8157973B2 (enExample)
EP (1) EP2039797B1 (enExample)
JP (1) JP4879986B2 (enExample)
KR (1) KR101040076B1 (enExample)
CN (1) CN101479400B (enExample)
TW (1) TW200801216A (enExample)
WO (1) WO2008001547A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2236644A3 (en) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Sputtering target backing plate assembly and film deposition system
US8398833B2 (en) * 2008-04-21 2013-03-19 Honeywell International Inc. Use of DC magnetron sputtering systems
KR20140129250A (ko) 2009-11-20 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법
JP5175978B2 (ja) 2009-12-24 2013-04-03 Ｊｘ日鉱日石金属株式会社 ガドリニウム製スパッタリングターゲット及び同ターゲットの製造方法
US10006117B2 (en) 2010-10-27 2018-06-26 Jx Nippon Mining & Metals Corporation Sputtering target-backing plate assembly and method for producing same
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
CN105209657A (zh) * 2013-11-06 2015-12-30 吉坤日矿日石金属株式会社 溅射靶/背衬板组件
KR101923292B1 (ko) 2014-07-31 2018-11-28 제이엑스금속주식회사 방식성의 금속과 Mo 또는 Mo 합금을 확산 접합한 백킹 플레이트, 및 그 백킹 플레이트를 구비한 스퍼터링 타깃-백킹 플레이트 조립체
JP6021861B2 (ja) * 2014-08-06 2016-11-09 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体
KR101649794B1 (ko) 2014-08-20 2016-08-19 김정욱 타워램프 상태 모니터링용 무선 타워램프 정보 관리 시스템
JP6546953B2 (ja) 2017-03-31 2019-07-17 Ｊｘ金属株式会社 スパッタリングターゲット−バッキングプレート接合体及びその製造方法
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
KR102263414B1 (ko) 2020-02-19 2021-06-10 주식회사 엘에이티 스퍼터 전극체
CN113173284B (zh) * 2021-04-26 2022-07-15 宁波江丰电子材料股份有限公司 一种半成品靶材背板的管理方法
KR102707659B1 (ko) 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체
KR102815335B1 (ko) 2022-11-17 2025-06-02 바짐테크놀로지 주식회사 스퍼터링 타겟 접합방법
KR102727468B1 (ko) 2024-06-18 2024-11-07 주식회사 샤슘코리아 마찰용접 기반의 스퍼터링 타겟 어셈블리 제조 방법
KR102727465B1 (ko) 2024-06-18 2024-11-07 주식회사 샤슘코리아 백 플레이트 결합력 및 타겟 수명을 개선한 스퍼터링 타겟 어셈블리

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6345368A (ja) * 1986-08-13 1988-02-26 Toshiba Corp スパツタ装置
JPH11189870A (ja) * 1997-12-25 1999-07-13 Nisshin Steel Co Ltd スパッタリング用ターゲットおよびその冷却方法
JP2002129316A (ja) * 2000-10-31 2002-05-09 Nikko Materials Co Ltd タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
WO2005007920A2 (en) * 2003-07-14 2005-01-27 Tosoh Smd, Inc. Sputtering target assembly having low conductivity backing plate and method of making same
WO2005064036A1 (ja) * 2003-12-25 2005-07-14 Nikko Materials Co., Ltd. 銅又は銅合金ターゲット/銅合金バッキングプレート組立体
WO2006054409A1 (ja) * 2004-11-17 2006-05-26 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット、スパッタリングターゲット－バッキングプレート組立体及び成膜装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01222047A (ja) 1988-03-01 1989-09-05 Nippon Mining Co Ltd 銅又は銅合金製バッキングプレート
JPH0774436B2 (ja) 1990-09-20 1995-08-09 富士通株式会社 薄膜形成方法
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JP3660014B2 (ja) 1995-03-31 2005-06-15 株式会社テクノファイン スパッタ用ターゲット
JP2001329362A (ja) 2000-05-17 2001-11-27 Nikko Materials Co Ltd バッキングプレート及びスパッタリングターゲット−バッキングプレート組立体
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP3905295B2 (ja) * 2000-10-02 2007-04-18 日鉱金属株式会社 高純度コバルトターゲットと銅合金製バッキングプレートとの拡散接合ターゲット組立体及びその製造方法
KR100631275B1 (ko) * 2000-11-17 2006-10-02 닛코킨조쿠 가부시키가이샤 파티클 발생이 적은 스퍼터링 타겟트 또는 배킹 플레이트 및 파티클 발생이 적은 스퍼터링 방법
US7115193B2 (en) * 2001-03-14 2006-10-03 Nippon Mining & Metals Co., Ltd. Sputtering target producing very few particles, backing plate or apparatus within sputtering device and roughening method by electric discharge machining
KR100600973B1 (ko) * 2001-12-19 2006-07-13 닛코킨조쿠 가부시키가이샤 자성체 타겟트와 배킹 플레이트와의 접합방법 및 자성체 타겟트와 배킹 플레이트와의 조립체
US6709557B1 (en) * 2002-02-28 2004-03-23 Novellus Systems, Inc. Sputter apparatus for producing multi-component metal alloy films and method for making the same
TWI269815B (en) * 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
CN101171362B (zh) * 2005-04-28 2010-06-09 日矿金属株式会社 溅射靶
JP4949259B2 (ja) * 2005-10-04 2012-06-06 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080236738A1 (en) * 2007-03-30 2008-10-02 Chi-Fung Lo Bonded sputtering target and methods of manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6345368A (ja) * 1986-08-13 1988-02-26 Toshiba Corp スパツタ装置
JPH11189870A (ja) * 1997-12-25 1999-07-13 Nisshin Steel Co Ltd スパッタリング用ターゲットおよびその冷却方法
JP2002129316A (ja) * 2000-10-31 2002-05-09 Nikko Materials Co Ltd タンタル又はタングステンターゲット−銅合金製バッキングプレート組立体及びその製造方法
WO2005007920A2 (en) * 2003-07-14 2005-01-27 Tosoh Smd, Inc. Sputtering target assembly having low conductivity backing plate and method of making same
WO2005064036A1 (ja) * 2003-12-25 2005-07-14 Nikko Materials Co., Ltd. 銅又は銅合金ターゲット/銅合金バッキングプレート組立体
WO2006054409A1 (ja) * 2004-11-17 2006-05-26 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット、スパッタリングターゲット－バッキングプレート組立体及び成膜装置

Also Published As

Publication number Publication date
CN101479400B (zh) 2011-06-22
US8157973B2 (en) 2012-04-17
TWI353390B (enExample) 2011-12-01
KR101040076B1 (ko) 2011-06-09
EP2039797B1 (en) 2012-08-29
CN101479400A (zh) 2009-07-08
TW200801216A (en) 2008-01-01
EP2039797A1 (en) 2009-03-25
KR20090016599A (ko) 2009-02-16
EP2039797A4 (en) 2010-04-28
US20090277788A1 (en) 2009-11-12
JPWO2008001547A1 (ja) 2009-11-26
WO2008001547A1 (en) 2008-01-03

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