JP7362327B2 - ターゲット構造体及び成膜装置 - Google Patents
ターゲット構造体及び成膜装置 Download PDFInfo
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- JP7362327B2 JP7362327B2 JP2019133148A JP2019133148A JP7362327B2 JP 7362327 B2 JP7362327 B2 JP 7362327B2 JP 2019133148 A JP2019133148 A JP 2019133148A JP 2019133148 A JP2019133148 A JP 2019133148A JP 7362327 B2 JP7362327 B2 JP 7362327B2
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- Prior art keywords
- target
- cooling jacket
- region
- target structure
- backing plate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Description
20 ターゲット
22a ホルダ
100 ターゲット構造体
110 ターゲット
111 スパッタ面
112 鍔部
120 接合層
130 冷却ジャケット
131 第1領域(周囲部)
132 第2領域
133 流路
134 上板部
135 下板部
136 区画部
140 接合層
145 非接合領域
150 バッキングプレート
160 クランプ部材
165 ボルト
Claims (7)
- ターゲットと、
熱交換媒体が通流する流路を有する冷却ジャケットと、
バッキングプレートと、を備え、
前記ターゲットは、前記冷却ジャケットの一方の面と接合され、
前記冷却ジャケットの他方の面と前記バッキングプレートとは、周囲部でろう付けで接合され、前記周囲部よりも内側は接合されていない非接合領域を有し、
前記冷却ジャケットは、前記ターゲットよりも熱伝導性の高い材料で構成され、
前記冷却ジャケットは、前記ターゲットよりも外力に対して変形しやすく、
前記バッキングプレートは、前記冷却ジャケットよりも剛性が高い材料で構成される、
ターゲット構造体。 - 前記ターゲットは、前記冷却ジャケットの一方の面にIn又はSnのボンディングで接合される、
請求項1に記載のターゲット構造体。 - 前記冷却ジャケットの前記流路は、前記周囲部よりも内側に形成される、
請求項1または請求項2に記載のターゲット構造体。 - 前記周囲部は、前記ターゲットのスパッタ面よりも外側の領域である、
請求項1乃至請求項3のいずれか1項に記載のターゲット構造体。 - 前記ターゲットは、該ターゲットの裏面の全面で、前記冷却ジャケットの一方の面と接合される、
請求項1乃至請求項4のいずれか1項に記載のターゲット構造体。 - 前記ターゲットをクランプするクランプ部材を更に備え、
前記クランプ部材は、
前記ターゲットにおいて前記周囲部に延出する鍔部でクランプする、
請求項1乃至請求項5のいずれか1項に記載のターゲット構造体。 - 請求項1乃至請求項6のいずれか1項に記載のターゲット構造体を備える、
成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019133148A JP7362327B2 (ja) | 2019-07-18 | 2019-07-18 | ターゲット構造体及び成膜装置 |
KR1020200082659A KR20210010346A (ko) | 2019-07-18 | 2020-07-06 | 타겟 구조체 및 성막 장치 |
CN202010650080.0A CN112239852B (zh) | 2019-07-18 | 2020-07-08 | 靶结构和成膜装置 |
US16/929,347 US11823880B2 (en) | 2019-07-18 | 2020-07-15 | Target structure and film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019133148A JP7362327B2 (ja) | 2019-07-18 | 2019-07-18 | ターゲット構造体及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021017617A JP2021017617A (ja) | 2021-02-15 |
JP7362327B2 true JP7362327B2 (ja) | 2023-10-17 |
Family
ID=74170605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019133148A Active JP7362327B2 (ja) | 2019-07-18 | 2019-07-18 | ターゲット構造体及び成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11823880B2 (ja) |
JP (1) | JP7362327B2 (ja) |
KR (1) | KR20210010346A (ja) |
CN (1) | CN112239852B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020022502A (ko) | 2000-09-20 | 2002-03-27 | 장성환 | 대면적 마그네트론 소스와 백 플레이트 |
JP2003328119A (ja) | 2002-05-14 | 2003-11-19 | Ulvac Japan Ltd | スパッタカソード |
JP2006526073A (ja) | 2003-05-23 | 2006-11-16 | アプライド フィルムス ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | マグネトロンスパッタカソード電極 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
DE3613018A1 (de) * | 1986-04-17 | 1987-10-22 | Santos Pereira Ribeiro Car Dos | Magnetron-zerstaeubungskathode |
JPH06108241A (ja) * | 1992-09-30 | 1994-04-19 | Shibaura Eng Works Co Ltd | スパッタリング装置 |
US5503472A (en) | 1993-06-29 | 1996-04-02 | Sun Microsystems, Inc. | Method and apparatus for assembly of a multi-disk pack unit |
JPH0721760U (ja) | 1993-09-30 | 1995-04-21 | 日電アネルバ株式会社 | カソードの構造 |
JP3628395B2 (ja) * | 1995-09-25 | 2005-03-09 | 株式会社アルバック | スパッタカソード |
JP2000073164A (ja) * | 1998-08-28 | 2000-03-07 | Showa Alum Corp | スパッタリング用バッキングプレート |
JP4130263B2 (ja) * | 1998-12-03 | 2008-08-06 | 三菱伸銅株式会社 | スパッタリング装置および水冷カソード |
JP3803520B2 (ja) * | 1999-02-22 | 2006-08-02 | 忠弘 大見 | マグネット回転スパッタ装置 |
JP2008308728A (ja) * | 2007-06-14 | 2008-12-25 | Ulvac Japan Ltd | バッキングプレート及びその製造方法 |
JP4526582B2 (ja) * | 2007-11-30 | 2010-08-18 | パナソニック株式会社 | スパッタリング装置およびスパッタリング方法 |
JP4739358B2 (ja) * | 2008-02-18 | 2011-08-03 | 住友重機械工業株式会社 | ターゲット装置 |
JP4382867B1 (ja) * | 2009-01-22 | 2009-12-16 | 順 上野 | ターゲット構造及びターゲット構造の製造方法 |
US8460521B2 (en) * | 2010-09-28 | 2013-06-11 | Primestar Solar, Inc. | Sputtering cathode having a non-bonded semiconducting target |
CN103314129B (zh) * | 2011-04-15 | 2015-05-20 | 株式会社爱发科 | 阴极 |
TWI424079B (zh) * | 2011-08-30 | 2014-01-21 | Sumitomo Heavy Industries | Film forming apparatus and target device |
CN102965627A (zh) * | 2011-09-01 | 2013-03-13 | 住友重机械工业株式会社 | 成膜装置及靶装置 |
US10770275B2 (en) * | 2016-06-29 | 2020-09-08 | Ulvac, Inc. | Film forming unit for sputtering apparatus |
-
2019
- 2019-07-18 JP JP2019133148A patent/JP7362327B2/ja active Active
-
2020
- 2020-07-06 KR KR1020200082659A patent/KR20210010346A/ko active IP Right Grant
- 2020-07-08 CN CN202010650080.0A patent/CN112239852B/zh active Active
- 2020-07-15 US US16/929,347 patent/US11823880B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020022502A (ko) | 2000-09-20 | 2002-03-27 | 장성환 | 대면적 마그네트론 소스와 백 플레이트 |
JP2003328119A (ja) | 2002-05-14 | 2003-11-19 | Ulvac Japan Ltd | スパッタカソード |
JP2006526073A (ja) | 2003-05-23 | 2006-11-16 | アプライド フィルムス ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | マグネトロンスパッタカソード電極 |
Also Published As
Publication number | Publication date |
---|---|
JP2021017617A (ja) | 2021-02-15 |
CN112239852B (zh) | 2023-11-14 |
US11823880B2 (en) | 2023-11-21 |
KR20210010346A (ko) | 2021-01-27 |
US20210020419A1 (en) | 2021-01-21 |
CN112239852A (zh) | 2021-01-19 |
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