TWI358067B - Integrated circuits and discharge circuits - Google Patents

Integrated circuits and discharge circuits Download PDF

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Publication number
TWI358067B
TWI358067B TW096148594A TW96148594A TWI358067B TW I358067 B TWI358067 B TW I358067B TW 096148594 A TW096148594 A TW 096148594A TW 96148594 A TW96148594 A TW 96148594A TW I358067 B TWI358067 B TW I358067B
Authority
TW
Taiwan
Prior art keywords
voltage
transistor
coupled
discharge
circuit
Prior art date
Application number
TW096148594A
Other languages
English (en)
Chinese (zh)
Other versions
TW200929221A (en
Inventor
Te Chang Tseng
Chun Yi Tu
Arakawa Hideki
Kyoji Yamasaki
Original Assignee
Powerchip Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Technology Corp filed Critical Powerchip Technology Corp
Priority to TW096148594A priority Critical patent/TWI358067B/zh
Priority to JP2008306999A priority patent/JP2009151920A/ja
Priority to US12/335,189 priority patent/US7903470B2/en
Publication of TW200929221A publication Critical patent/TW200929221A/zh
Application granted granted Critical
Publication of TWI358067B publication Critical patent/TWI358067B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW096148594A 2007-12-19 2007-12-19 Integrated circuits and discharge circuits TWI358067B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW096148594A TWI358067B (en) 2007-12-19 2007-12-19 Integrated circuits and discharge circuits
JP2008306999A JP2009151920A (ja) 2007-12-19 2008-12-02 メモリデバイスと放電回路とを備える集積回路
US12/335,189 US7903470B2 (en) 2007-12-19 2008-12-15 Integrated circuits and discharge circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096148594A TWI358067B (en) 2007-12-19 2007-12-19 Integrated circuits and discharge circuits

Publications (2)

Publication Number Publication Date
TW200929221A TW200929221A (en) 2009-07-01
TWI358067B true TWI358067B (en) 2012-02-11

Family

ID=40788427

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148594A TWI358067B (en) 2007-12-19 2007-12-19 Integrated circuits and discharge circuits

Country Status (3)

Country Link
US (1) US7903470B2 (enExample)
JP (1) JP2009151920A (enExample)
TW (1) TWI358067B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107370351A (zh) * 2016-05-13 2017-11-21 中芯国际集成电路制造（天津）有限公司 电荷泄放电路

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8000151B2 (en) 2008-01-10 2011-08-16 Micron Technology, Inc. Semiconductor memory column decoder device and method
US8576611B2 (en) 2010-07-08 2013-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Memory with regulated ground nodes
WO2014124324A1 (en) * 2013-02-08 2014-08-14 Sandisk Technologies Inc. Non-volatile memory including bit line switch transistors formed in a triple-well
JP5883494B1 (ja) * 2014-11-19 2016-03-15 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
US9806608B2 (en) * 2015-02-13 2017-10-31 Apple Inc. Charge pump having AC and DC outputs for touch panel bootstrapping and substrate biasing
CN119943114A (zh) * 2023-11-02 2025-05-06 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US5740109A (en) * 1996-08-23 1998-04-14 Motorola, Inc. Non-linear charge pump
KR100481841B1 (ko) * 1997-11-25 2005-08-25 삼성전자주식회사 음의고전압을방전시키기위한회로를구비한플래시메모리장치
JP2000021186A (ja) * 1998-07-02 2000-01-21 Toshiba Corp 不揮発性半導体記憶装置
JP3883391B2 (ja) * 2001-02-28 2007-02-21 シャープ株式会社 不揮発性半導体メモリのウェル電圧設定回路およびそれを備えた半導体メモリ装置
US6667910B2 (en) * 2002-05-10 2003-12-23 Micron Technology, Inc. Method and apparatus for discharging an array well in a flash memory device
JP4357351B2 (ja) * 2004-04-23 2009-11-04 株式会社東芝 不揮発性半導体記憶装置
DE102004028934B3 (de) * 2004-06-15 2006-01-05 Infineon Technologies Ag Entladeschaltung für eine kapazitive Last
JP4881552B2 (ja) * 2004-09-09 2012-02-22 ルネサスエレクトロニクス株式会社 半導体装置
US7272053B2 (en) * 2004-11-18 2007-09-18 Freescale Semiconductor, Inc. Integrated circuit having a non-volatile memory with discharge rate control and method therefor
KR100688545B1 (ko) * 2005-05-04 2007-03-02 삼성전자주식회사 메모리 장치의 소거 전압 디스차지 방법
JP4903432B2 (ja) * 2005-12-27 2012-03-28 株式会社東芝 不揮発性半導体記憶装置
JP2008004336A (ja) * 2006-06-21 2008-01-10 Yazaki Corp コネクタ
JP2008004236A (ja) * 2006-06-26 2008-01-10 Samsung Electronics Co Ltd 不揮発性半導体記憶装置の消去放電制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107370351A (zh) * 2016-05-13 2017-11-21 中芯国际集成电路制造（天津）有限公司 电荷泄放电路
CN107370351B (zh) * 2016-05-13 2019-12-27 中芯国际集成电路制造（天津）有限公司 电荷泄放电路

Also Published As

Publication number Publication date
US7903470B2 (en) 2011-03-08
TW200929221A (en) 2009-07-01
JP2009151920A (ja) 2009-07-09
US20090161440A1 (en) 2009-06-25

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